JPH0434817B2 - - Google Patents

Info

Publication number
JPH0434817B2
JPH0434817B2 JP26029584A JP26029584A JPH0434817B2 JP H0434817 B2 JPH0434817 B2 JP H0434817B2 JP 26029584 A JP26029584 A JP 26029584A JP 26029584 A JP26029584 A JP 26029584A JP H0434817 B2 JPH0434817 B2 JP H0434817B2
Authority
JP
Japan
Prior art keywords
impurity concentration
silicon
aqueous solution
alkaline aqueous
silicon semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP26029584A
Other languages
English (en)
Japanese (ja)
Other versions
JPS61137329A (ja
Inventor
Kyoichi Ikeda
Katsumi Isozaki
Tetsuya Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yokogawa Electric Corp
Original Assignee
Yokogawa Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yokogawa Electric Corp filed Critical Yokogawa Electric Corp
Priority to JP26029584A priority Critical patent/JPS61137329A/ja
Publication of JPS61137329A publication Critical patent/JPS61137329A/ja
Publication of JPH0434817B2 publication Critical patent/JPH0434817B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Weting (AREA)
JP26029584A 1984-12-10 1984-12-10 半導体の微細加工方法 Granted JPS61137329A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26029584A JPS61137329A (ja) 1984-12-10 1984-12-10 半導体の微細加工方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26029584A JPS61137329A (ja) 1984-12-10 1984-12-10 半導体の微細加工方法

Publications (2)

Publication Number Publication Date
JPS61137329A JPS61137329A (ja) 1986-06-25
JPH0434817B2 true JPH0434817B2 (enExample) 1992-06-09

Family

ID=17346057

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26029584A Granted JPS61137329A (ja) 1984-12-10 1984-12-10 半導体の微細加工方法

Country Status (1)

Country Link
JP (1) JPS61137329A (enExample)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3456790B2 (ja) * 1995-04-18 2003-10-14 三菱電機株式会社 半導体装置の製造方法及び選択エッチング用シリコン基板カセット
JPH09115978A (ja) * 1995-10-17 1997-05-02 Mitsubishi Electric Corp 半導体装置の評価方法
JP3638715B2 (ja) * 1996-05-27 2005-04-13 株式会社ルネサステクノロジ 半導体装置の評価方法
JP2008078202A (ja) * 2006-09-19 2008-04-03 Yokogawa Electric Corp ボロン拡散型単結晶振動子及びその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6130039A (ja) * 1984-07-23 1986-02-12 Nec Corp エツチングの方法

Also Published As

Publication number Publication date
JPS61137329A (ja) 1986-06-25

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