JPS61137324A - パタ−ン形成方法 - Google Patents

パタ−ン形成方法

Info

Publication number
JPS61137324A
JPS61137324A JP59259537A JP25953784A JPS61137324A JP S61137324 A JPS61137324 A JP S61137324A JP 59259537 A JP59259537 A JP 59259537A JP 25953784 A JP25953784 A JP 25953784A JP S61137324 A JPS61137324 A JP S61137324A
Authority
JP
Japan
Prior art keywords
pattern
pmma
organic resin
far ultraviolet
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59259537A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0235449B2 (enExample
Inventor
Yoshihiro Todokoro
義博 戸所
Yasuhiro Takasu
高須　保弘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP59259537A priority Critical patent/JPS61137324A/ja
Publication of JPS61137324A publication Critical patent/JPS61137324A/ja
Publication of JPH0235449B2 publication Critical patent/JPH0235449B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • H10P95/00—

Landscapes

  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP59259537A 1984-12-07 1984-12-07 パタ−ン形成方法 Granted JPS61137324A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59259537A JPS61137324A (ja) 1984-12-07 1984-12-07 パタ−ン形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59259537A JPS61137324A (ja) 1984-12-07 1984-12-07 パタ−ン形成方法

Publications (2)

Publication Number Publication Date
JPS61137324A true JPS61137324A (ja) 1986-06-25
JPH0235449B2 JPH0235449B2 (enExample) 1990-08-10

Family

ID=17335483

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59259537A Granted JPS61137324A (ja) 1984-12-07 1984-12-07 パタ−ン形成方法

Country Status (1)

Country Link
JP (1) JPS61137324A (enExample)

Also Published As

Publication number Publication date
JPH0235449B2 (enExample) 1990-08-10

Similar Documents

Publication Publication Date Title
JP2565119B2 (ja) パターン形成方法
DE3784541D1 (de) Verfahren zur herstellung einer niedergeschlagenen schicht.
JPS62115166A (ja) 光マスクとその製造方法
JPS61137324A (ja) パタ−ン形成方法
US5104481A (en) Method for fabricating laser generated I.C. masks
JPS6351641A (ja) 単結晶または多結晶Ｓｉ膜の微細パタ−ン形成方法
JPH03129349A (ja) フォトマスクの製法
JPS6049630A (ja) 半導体装置の製造方法
US5260235A (en) Method of making laser generated I. C. pattern for masking
JP2942825B1 (ja) 面外分岐ミラーを有する光集積回路の製造方法
JP2004272049A (ja) Ｓｉ−Ｏ−Ｓｉ結合を含む固体化合物膜の形成方法、固体化合物膜の酸化ケイ素への改質方法、パターン形成方法及びリソグラフイー用レジスト
JPS61204933A (ja) 半導体装置の製造方法
JPS56140345A (en) Formation of pattern
JPS63237527A (ja) レジスト剥離方法
JPS6116521A (ja) レジスト膜除去方法
JPS6029921B2 (ja) 回折格子作製方法
JP2617923B2 (ja) パターン形成方法
JPS5898922A (ja) パタ−ン形成方法
JPS6097625A (ja) パタ−ン形成方法
EP0627123A4 (en) LASER SHAPED INTEGRATED CIRCUIT MASK.
JPH02140748A (ja) レジストパターン形成方法
JPS60217630A (ja) 遠紫外光用レジスト露光方法
JPH0685070B2 (ja) レジストパターンの現像方法
JPS59201417A (ja) 乾式リソグラフイ・パタ−ン製法
JPH02114531A (ja) 半導体装置の製造方法