JPS61136676A - 気相成長装置 - Google Patents

気相成長装置

Info

Publication number
JPS61136676A
JPS61136676A JP25977784A JP25977784A JPS61136676A JP S61136676 A JPS61136676 A JP S61136676A JP 25977784 A JP25977784 A JP 25977784A JP 25977784 A JP25977784 A JP 25977784A JP S61136676 A JPS61136676 A JP S61136676A
Authority
JP
Japan
Prior art keywords
susceptors
susceptor
wafers
bell
jar
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP25977784A
Other languages
English (en)
Japanese (ja)
Other versions
JPH037752B2 (enExample
Inventor
Seiichi Nakamura
誠一 中村
Satoru Nakayama
中山　了
Fuminori Higami
樋上　文範
Junichi Sakamoto
淳一 坂本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Corp
Original Assignee
Sumitomo Metal Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Industries Ltd filed Critical Sumitomo Metal Industries Ltd
Priority to JP25977784A priority Critical patent/JPS61136676A/ja
Publication of JPS61136676A publication Critical patent/JPS61136676A/ja
Publication of JPH037752B2 publication Critical patent/JPH037752B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Chemical Vapour Deposition (AREA)
JP25977784A 1984-12-07 1984-12-07 気相成長装置 Granted JPS61136676A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25977784A JPS61136676A (ja) 1984-12-07 1984-12-07 気相成長装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25977784A JPS61136676A (ja) 1984-12-07 1984-12-07 気相成長装置

Publications (2)

Publication Number Publication Date
JPS61136676A true JPS61136676A (ja) 1986-06-24
JPH037752B2 JPH037752B2 (enExample) 1991-02-04

Family

ID=17338826

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25977784A Granted JPS61136676A (ja) 1984-12-07 1984-12-07 気相成長装置

Country Status (1)

Country Link
JP (1) JPS61136676A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100269754A1 (en) * 2009-04-28 2010-10-28 Mitsubishi Materials Corporation Polycrystalline silicon reactor
JP2014500626A (ja) * 2010-12-01 2014-01-09 北京北方▲微▼▲電▼子基地▲設▼▲備▼工▲芸▼研究中心有限▲責▼任公司 トレイデバイスおよび結晶膜成長装置
KR20160102897A (ko) * 2015-02-23 2016-08-31 도쿄엘렉트론가부시키가이샤 성막 장치
US11390950B2 (en) * 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5364682A (en) * 1976-11-19 1978-06-09 Rca Corp Chemical evaporation method and apparatus

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5364682A (en) * 1976-11-19 1978-06-09 Rca Corp Chemical evaporation method and apparatus

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100269754A1 (en) * 2009-04-28 2010-10-28 Mitsubishi Materials Corporation Polycrystalline silicon reactor
US8540818B2 (en) * 2009-04-28 2013-09-24 Mitsubishi Materials Corporation Polycrystalline silicon reactor
JP2014500626A (ja) * 2010-12-01 2014-01-09 北京北方▲微▼▲電▼子基地▲設▼▲備▼工▲芸▼研究中心有限▲責▼任公司 トレイデバイスおよび結晶膜成長装置
KR20160102897A (ko) * 2015-02-23 2016-08-31 도쿄엘렉트론가부시키가이샤 성막 장치
JP2016157724A (ja) * 2015-02-23 2016-09-01 東京エレクトロン株式会社 成膜装置
US10604837B2 (en) 2015-02-23 2020-03-31 Tokyo Electron Limited Film deposition apparatus
US11390950B2 (en) * 2017-01-10 2022-07-19 Asm Ip Holding B.V. Reactor system and method to reduce residue buildup during a film deposition process

Also Published As

Publication number Publication date
JPH037752B2 (enExample) 1991-02-04

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