JPS61136676A - Vapor growth device - Google Patents

Abstract

PURPOSE:To subject simultaneously many semiconductor wafers each having a large area to vapor growth by disposing many susceptors on a horizontal rotary plate provided in a bell-jar into multiple stages by using stands and imposing the wafers atop the respective susceptors. CONSTITUTION:The cylindrical bell-jar 2 is fixed on a base plate 1 and a shaft part 4a is projected through the plate 1. The rotary plate 4 is provided thereto. The plural stands 5 are erected at specified intervals in the peripheral direction on the plate 4 and the plural susceptors 6 are laminated and placed at required intervals in a vertical direction to the adjacent stands 5. The wafers 7 are placed on the respective susceptors 6 and the plate 4 is turned around the shaft 4a. A main heater 8 and auxiliary heater 9 are driven to heat the susceptors 6 and the wafers 7 to the prescribed temp. Water is supplied from a water cooling pipe 3b and a cooling gas from an introducing port 3c, respectively so that the bell-jar 2 is kept cooled. A gaseous raw material is then supplied from a gas supply pipe 10 into the bell-jar 2 and is passed between the stacked susceptors 6, by which epitaxial films are vapor-grown on the wafers 7.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a vapor phase growth apparatus capable of epitaxially growing a large number of semiconductor wafers at the same time.

[Prior art]

As this type of vapor phase growth apparatus, an apparatus as shown in FIG. 4.5, for example, is conventionally known. FIG. 4 is a schematic cross-sectional view showing a conventional vapor phase growth apparatus, in which a susceptor 33 is horizontally rotatably arranged in the center of a bell jar 32 through a base 31, and a high-frequency heating coil is placed below the susceptor 33. 3
A plurality of semiconductor wafers (hereinafter simply referred to as wafers) 35 are placed on the susceptor 33, and a coil 3 is placed on the susceptor 33.
4, the susceptor 33 is heated, and the wafer 35 is heated and maintained at a predetermined temperature by the heat of the susceptor 33.
A required raw material gas is supplied through a nozzle 36 introduced into the bell jar 32 through the shaft portion 33a of the No.

Furthermore, FIG. 5 is a schematic cross-sectional view showing a conventional barrel-type vapor phase growth apparatus, in which a plurality of susceptors 44 are assembled in a polygonal pyramid shape around a shaft 43 that is rotatably suspended in a bell jar 42 through a substrate 41. A plurality of wafers 45 are placed on the surface of each susceptor 44, and a coil 46 for high frequency heating is placed on the outer periphery of the bell jar 42 corresponding to the susceptor 44. wafer 4
While heating the wafer 5, raw material gas is introduced into the bell jar 42 from an inlet 47 opened in the peripheral wall of the bell jar 42, and is allowed to flow through the bell jar 42, thereby allowing epitaxial growth to be performed on each wafer 45. ing.

[Problem that the invention seeks to solve]

By the way, in the conventional vapor phase growth apparatus as mentioned above,
In both cases, the density of the wafers occupying the space inside the bell jar is small, and the number of wafers to be processed is small, and the heat uniformity effect of the wafers due to radiation is also small. For this reason, in the past, as a means to increase the number of wafers processed, increase the density of wafers in the space inside the bell jar, and improve the heat uniformity effect, a disk-shaped susceptor was erected on a rotating plate placed inside the bell jar. A vapor phase growth system is installed on a radiation plate and wafers are fixed on both sides of each susceptor to increase the density of wafers and susceptors in the bell jar, increasing the number of wafers processed and the uniform heating effect of the wafers due to radiation. has been proposed (Japanese Unexamined Patent Application Publication No. 57-7899).

However, although this type of equipment can increase the wafer area, the number of wafers processed is only about twice that of the equipment shown in Figure 4. equipment is desired.

[Means for solving problems]

The present invention has been made in view of the above circumstances, and its object is to erect a plurality of supports on a substrate, to mount susceptors in multiple stages between the supports, and to place a plurality of susceptors on each susceptor. By mounting the wafers, it is possible to perform vapor phase growth on a large number of wafers at the same time, and the efficiency is high (in addition, the wafer is uniformly heated by radiation, and the quality of the epitaxially grown film itself can be improved. To provide a vapor phase growth apparatus that

In the vapor phase growth apparatus obtained in the present invention, a plurality of susceptors are arranged in multiple stages with a required interval between them using a frame on a horizontal rotary plate installed in a bell jar, and a semiconductor wafer is placed on the top surface of each susceptor. It is characterized by being made possible.

〔Example〕

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be specifically described below based on drawings showing embodiments thereof. FIG. 1 is a schematic cross-sectional view of a vapor phase growth apparatus according to the present invention (hereinafter referred to as the present invention apparatus), and FIG. The stand, 2, indicates Belljar. The bell jar 2 is formed into a cylindrical shape with a closed upper end using a heat-resistant material such as quartz, and has a lower end fixed on a base I. Outside the bell jar 2, a water cooling jacket 3 having approximately the same diameter and slightly larger size is arranged, and inside the bell jar 2, a rotary plate 4, a pedestal 5, a susceptor 6, a wafer 7, a main heater 8, an auxiliary heater 9, etc. are arranged. It is set up.

The water cooling jacket 3 is constructed by wrapping a water cooling tube 3b around the outer periphery of a cylindrical inner shell 3a made of a heat-resistant metal such as stainless steel. A plurality of exhaust ports 3e are opened on the lower circumferential surface. The diameter of the inner shell 3a of the water cooling jacket 3 is slightly larger than the outer diameter of the bell jar 2, and the outside of the bell jar 2 is separated from the bell jar 2 by a gap that constitutes a cooling gas passage 3d. It is arranged so as to surround it, and its lower end is positioned on the base 1 concentrically with the belljar 2. The bell jar 2 is cooled by passing cooling water through the water cooling pipe 3b and flowing nitrogen gas through the passage 3d from the inlet 3c.

The rotating plate 4 is formed into a disk shape using a heat-resistant material such as silicon carbide or other heat-resistant material, and a shaft portion 4a is integrally formed with the same material at the center of the lower surface.
A is made to protrude downward through the base "l" and is connected to a drive unit (not shown) so that it can be rotated at a predetermined speed.

A plurality of mounts 5 are erected on the upper surface of the rotary plate 4 at regular intervals in the circumferential direction, and a plurality of susceptors 6 are stacked and stacked on the adjacent mounts 5 at required intervals in the upper and lower directions. and
Further, a plurality of main heaters 8 are provided outside the rotation range of the rotary table 4 between the peripheral wall of the bell jar 2, and a plurality of auxiliary heaters 9 and a raw material gas supply are provided at the rotation center of the rotary table 4. The tracheas 10 are arranged upright. The pedestal 5 is made of silicon carbide or other heat-resistant material, and has a fan-shaped portion 5a and an extending portion 5b extending therefrom, as shown in FIG. The existing portion 5b is erected at a required height with the existing portion 5b positioned on the rotation center side.

In this state, both side surfaces of the fan-shaped portions 5a of adjacent frames 5 are parallel to each other, and on both sides of the frame 5 including these portions, susceptors 6 with a thickness of A large number of recessed grooves 5c having a width slightly larger than that of the rotary plate 4 are formed, and the susceptor 6 is inserted and placed thereon from the peripheral edge side of the rotary plate 4 across the recessed grooves 5c of the adjacent frames 5. There is. The susceptor 6 is formed into a hexagonal plate shape, and is mounted on the pedestal 5 with both side edges engaged in the corresponding grooves 5c of the adjacent pedestals 5. A wafer 7 is placed thereon.

The main heater 8 includes the rotary plate 4 and a pedestal 5 erected thereon.
A plurality of auxiliary heaters 9 are formed in an arc shape along the rotation range of the bell jar 2 and the inner peripheral wall of the bell jar 2, and a plurality of auxiliary heaters 9 are arranged upright at regular intervals in the circumferential direction. A plurality of them are also arranged circumferentially inside the rotation area of the upper frame 5 and spaced apart from each other at regular intervals in the circumferential direction. Each main heater 8 penetrates the base 1 and is erected at approximately the same height as the pedestal 5, and a plurality of raw material gas exhaust ports 1a are opened in the base l between the main heaters 8. ing.

Each auxiliary heater 9 is introduced into the bell jar 2 through the shaft portion 4a of the rotary plate 4, and is erected at approximately the same height as the pedestal 5. A plurality of raw material gas supply pipes 10 having different gas supply pipes are arranged.

Each air supply pipe 10 is constructed by opening an air outlet 10a in the circumferential wall near the upper end of a pipe whose upper end is closed. In other words, the setting is such that the raw material gas can be uniformly supplied to all the susceptors 6.

In the apparatus of the present invention configured as described above, the wafer 7 is placed on each susceptor 6, and in this state, each susceptor 6 is mounted by inserting both side edges into the groove 5c of the pedestal 5. 0 A motor (not shown) is driven to rotate the rotary plate 4 around its axis 4a, and the main heater 8 and auxiliary heater 9 are driven to heat the susceptor 6 and wafer 7 to a predetermined temperature.

Water is passed through the water cooling pipe 3b of the intercooling jacket 3, and cooling gas such as nitrogen is passed through the inlet 3c into the passage 3d to keep the bell jar 2 cool. When the susceptor 6 and wafer 7 are heated to a predetermined temperature, raw material gas is supplied into the bell jar 2 from the air supply pipe 10. The raw material gas is made to flow between the stacked susceptors 6 from the air supply pipes 10 having different heights, and an epitaxial film is grown on the wafer 7 in a vapor phase.

In the apparatus of the present invention configured as described above, a large number of susceptors 6 can be stacked and arranged between each mount 5, and a wafer 7 can be placed on each susceptor 6.
It is possible to perform uniform epitaxial growth on a large number of wafers 7 at the same time, greatly improving work efficiency, and by arranging a large number of susceptors 6 in multiple stacks, and also arranging a raw heater 8 and an auxiliary heater 9, they can be controlled. This makes it possible to uniformly heat the wafer, thereby obtaining a homogeneous epitaxial film and improving the film quality.Furthermore, the susceptor 6 itself can easily deposit a film on the pedestal, improving work efficiency.

In addition, in the case of an apparatus of the present invention having an outer diameter of 800 mm and a height of 500 mm, it is possible to handle 100 to 6 inch diameter wafers at a time.
It was confirmed that it was possible to epitaxially grow about 150 sheets.

It has also been confirmed that vapor phase growth is more effective when carried out at a reduced pressure of about 50 Torr to 600 Torr.

FIG. 3 is a schematic diagram showing a part of the structure inside the bell jar showing another embodiment of the present invention, and is a peripheral portion on the rotary plate similar to that shown in FIGS. 1 to 3, and At four locations in the circumferential direction,
A support column 15 is made of a heat-resistant material such as silicon carbide and has a rectangular cross section with a large number of horizontal grooves 15a formed on one side.
is erected with the side surface on which the groove 15a is formed facing toward the center of rotation of the rotating plate, and a large number of annular susceptors 16 are stacked in such a manner that they extend over the plurality of supports 15, and each susceptor 16 is placed on top of each susceptor 16. The wafer 17 is subjected to ILF. The configurations of the main heater, auxiliary heater, raw material gas supply pipe, rotary plate, bell jar, etc. are substantially the same as those in the embodiment shown in FIGS. 1 to 3, and their explanation will be omitted.

In addition to the effects of the embodiments shown in FIGS. 1 to 3, such an embodiment has the effect that the susceptor area is increased, the number of susceptors is reduced, and handling becomes easier, and the configuration is simplified. It will be done.

Although each of the above-mentioned embodiments shows a configuration in which the present invention is applied to an epitaxial growth apparatus, the present invention is not limited to this in any way.
Needless to say, it can also be applied to apor (apor position).

〔effect〕

As described above, in the apparatus of the present invention, a large number of susceptors can be stacked, and the number of wafers that can be processed at one time is greatly increased, improving work efficiency. The present invention has excellent effects such as enhanced thermal effects and improved quality of the epitaxial film itself, for example.

[Brief explanation of the drawing]

FIG. 1 is a schematic cross-sectional view of the apparatus of the present invention, FIG. 2 is a vertical cross-sectional view taken along the line ■-■ in FIG. 1, and FIG. 3 is a portion showing the structure inside the bell jar of another embodiment of the present invention. Both the perspective view and FIG. 4.5 are schematic vertical sectional views of the conventional device. 1... Base 2... Bell jar 3... Water cooling jacket 4... Rotating plate 4a... Shaft part 5... Frame
5a...Sector-shaped portion 5c...-Concave groove 6...Susceptor 7...Wafer 8...Main heater 9...Auxiliary heater 10...Air supply pipe 10a...Blowout port 15
... Pillar 17 ... Susceptor patent Applicant Sumitomo Metal Industries Co., Ltd. Agent Patent attorney Noboru Kono = 437 = Hogyu l No. 5

Claims (1)

[Claims] 1. A plurality of susceptors are arranged in multiple stages with a required interval between them using a frame on a horizontal rotary plate installed in a bell gear, and a semiconductor wafer is placed on the top surface of each susceptor. A vapor phase growth apparatus characterized by: 2. A plurality of susceptors are arranged in multiple stages with a required interval between them using a frame on a horizontal rotary plate installed in the bell gear, and a semiconductor wafer can be placed on the top surface of each susceptor, and the susceptor A vapor phase growth apparatus characterized in that a plurality of air supply pipes facing the rotation range of the material gas and having different raw material gas blowing height positions are arranged. 3. A plurality of annular or annularly arranged susceptors are arranged in multiple stages with a required interval between them using a frame on a horizontal rotary plate installed in a bell gear, and a semiconductor wafer is placed on the top surface of each susceptor. A vapor phase growth apparatus characterized in that the susceptor can be placed on the susceptor, and heaters are disposed inside and outside the susceptor so as to face the rotation area of the susceptor.