JPH02146725A - Organic metal vapor growth device - Google Patents
Organic metal vapor growth deviceInfo
- Publication number
- JPH02146725A JPH02146725A JP30030688A JP30030688A JPH02146725A JP H02146725 A JPH02146725 A JP H02146725A JP 30030688 A JP30030688 A JP 30030688A JP 30030688 A JP30030688 A JP 30030688A JP H02146725 A JPH02146725 A JP H02146725A
- Authority
- JP
- Japan
- Prior art keywords
- substrate holder
- substrate
- liner tube
- tube
- reaction tube
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 6
- 239000002184 metal Substances 0.000 title claims abstract description 6
- 239000000758 substrate Substances 0.000 claims abstract description 91
- 239000007789 gas Substances 0.000 claims abstract description 30
- 239000010409 thin film Substances 0.000 claims abstract description 13
- 239000012159 carrier gas Substances 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims abstract 2
- 239000002994 raw material Substances 0.000 claims description 17
- 238000001947 vapour-phase growth Methods 0.000 claims description 6
- 125000002524 organometallic group Chemical group 0.000 claims description 5
- 230000002093 peripheral effect Effects 0.000 claims description 4
- 238000000927 vapour-phase epitaxy Methods 0.000 claims description 4
- 239000012808 vapor phase Substances 0.000 claims description 2
- 238000000034 method Methods 0.000 claims 1
- 239000012071 phase Substances 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 description 6
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000012856 packing Methods 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は有機金属気相成長装置に関し、特に気相成長さ
れる薄膜の膜厚を均一にさせるバレル形の有機金属気相
成長装置に関するものである。[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to an organometallic vapor phase epitaxy apparatus, and more particularly to a barrel-shaped organometallic vapor phase epitaxy apparatus that makes the thickness of a thin film grown in a vapor phase uniform. It is.
従来この種のバレル形の有機金属気相成長装置としては
、例えば、第３図に示されるものがある。A conventional barrel-shaped organometallic vapor phase growth apparatus of this type includes one shown in FIG. 3, for example.
同図において、回転対象形のバレル形反応管１の内部に
は基板ホルダー２が設置され、この基板ホルダー２は軸
３を中心として回転自在になっている。また、この基板
ホルダー２の外周面に形成された各面２ａには複数の基
板４が保持されている。そして、バレル形反応管１の上
部に形成された流入口１ａから原料ガスが内部に送りこ
まれ、各基板４が高周波加熱等によって加熱されること
により、各基板４の表面上で原料ガスが熱分解されて半
導体膜等の薄膜がエピタキシャル成長されるようになっ
ている。なお、原料ガスは図示の矢印のように送り込ま
れ、反応管１の下部に形成された排気口５から流出され
るものとなっている。In the figure, a substrate holder 2 is installed inside a rotationally symmetrical barrel-shaped reaction tube 1, and this substrate holder 2 is rotatable about an axis 3. Further, a plurality of substrates 4 are held on each surface 2a formed on the outer peripheral surface of this substrate holder 2. Then, the raw material gas is fed into the inside from the inlet 1a formed at the upper part of the barrel-shaped reaction tube 1, and each substrate 4 is heated by high frequency heating etc., so that the raw material gas is heated on the surface of each substrate 4. After being decomposed, thin films such as semiconductor films are grown epitaxially. Note that the raw material gas is fed in as shown by the arrow in the figure, and is discharged from an exhaust port 5 formed at the bottom of the reaction tube 1.
しかしながら上記構造の従来の気相成長装置においては
、第４図の横断面図に示すように、各基板４の表面と反
応管１の内壁面との距離は基板４の表面の位置によって
異なる。これは、基板４の表面が平面的であるのに対し
、反応管１の内壁面が球面的であるためであるが、この
距離の相違によって各基板４の表面の位置によって各表
面上を通過する原料ガスの流速は相違する。つまり、基
板４の両端部４ａにおける原料ガスの流速は距離Ｌ１が
短いため比較的速くなり、また、基板４の中央部４ｂに
おける原料ガスの流速は距離Ｌ２が長いため比較的遅く
なる。この結果、原料ガスが基板４表面上に吹き付けら
れる量は両端部４ａで多くなり、中央部４ｂで少なくな
るため、よどみ層（拡散層）の厚さは両端部４ａで厚く
なり、中央部４ｂで薄くなる。However, in the conventional vapor phase growth apparatus having the above structure, the distance between the surface of each substrate 4 and the inner wall surface of the reaction tube 1 varies depending on the position of the surface of the substrate 4, as shown in the cross-sectional view of FIG. This is because the surface of the substrate 4 is flat, while the inner wall surface of the reaction tube 1 is spherical. Due to this difference in distance, the surface of each substrate 4 passes through the surface depending on the position of the surface. The flow rate of the raw material gas is different. That is, the flow rate of the source gas at both ends 4a of the substrate 4 is relatively fast because the distance L1 is short, and the flow rate of the source gas at the center portion 4b of the substrate 4 is relatively slow because the distance L2 is long. As a result, the amount of source gas blown onto the surface of the substrate 4 increases at both ends 4a and decreases at the center 4b, so the thickness of the stagnation layer (diffusion layer) becomes thicker at both ends 4a and at the center 4b. It becomes thinner.
このように従来の気相成長装置はよどみ層の厚さが均一
に保てず、気相成長されて得られる薄膜の膜厚が均一に
ならないという課題を有していた。As described above, the conventional vapor phase growth apparatus has the problem that the thickness of the stagnation layer cannot be maintained uniformly, and the thickness of the thin film obtained by vapor phase growth is not uniform.
本発明はこのような課題を解消するためになされたもの
で、基板ホルダーの外周面とほぼ相似するように形成さ
れた内壁面を有するライナー管をこの内壁面と基板ホル
ダーの外周面とが対峙するようにバレル形反応管と基板
ホルダーとの間に設けたものである。The present invention has been made to solve these problems, and includes a liner tube having an inner wall surface formed to be substantially similar to the outer circumferential surface of the substrate holder, such that the inner wall surface and the outer circumferential surface of the substrate holder face each other. It is installed between the barrel-shaped reaction tube and the substrate holder so as to
各基板表面を通過する原料ガスの流速は各基板表面上の
位置にかかわらずほぼ一定となる。The flow rate of the source gas passing through each substrate surface is approximately constant regardless of the position on each substrate surface.
次に本発明について図面を参照して以下に詳述する。 Next, the present invention will be described in detail below with reference to the drawings.
第１図は本発明の一実施例を表す断面図である。FIG. 1 is a sectional view showing one embodiment of the present invention.
同図において、内部が空洞に形成された円筒状の石英か
ら成るバレル形の反応管１１は回転対称形になっており
、基台１２にパツキン１３を介して固定されている。ま
た、この反応管１１の内部にはカーボンから成る基板ホ
ルダー１４か設置され、このほぼ六角錐状の基板ホルダ
ー１４は軸１５に固定されている。この基板ホルダー１
４の外周に形成された六つの各面１４ａには基板１６が
２枚づつ上下に保持され、基板ホルダー１４の内部に構
成された加熱抵抗器もしくは加熱輻射器、または図示し
ないＲＦコイルによる高周波加熱器のいずれかにより各
基板１６は加熱されるように構成されている。In the figure, a barrel-shaped reaction tube 11 made of cylindrical quartz and having a hollow interior is rotationally symmetrical and is fixed to a base 12 via a packing 13. Further, a substrate holder 14 made of carbon is installed inside the reaction tube 11, and this substantially hexagonal pyramid-shaped substrate holder 14 is fixed to a shaft 15. This board holder 1
Two substrates 16 are held one above the other on each of the six surfaces 14a formed on the outer periphery of the substrate holder 14, and high-frequency heating is performed by a heating resistor or heating radiator configured inside the substrate holder 14, or an RF coil (not shown). Each substrate 16 is configured to be heated by one of the devices.
反応管１１の開口した上部にはガス分離供給装置１９が
パツキン２０を介して固定され、流入口１９゛ａから供
給された原料ガスはライナー管１７と基板ホルダー１４
との間隙に導かれ、流入口１’９ｂから供給されたキャ
リアガスはドーナツ状の空洞部１’９Ｃを経て反応管１
１とライナー管１７との間隙に導かれる構造になってい
る。そして、供給された各ガスは図面の上方から下方に
流れ、基台１２に形成された排気口１２ａへ排出される
。A gas separation and supply device 19 is fixed to the open upper part of the reaction tube 11 via a packing 20, and the raw material gas supplied from the inlet 19a is passed through the liner tube 17 and the substrate holder 14.
The carrier gas supplied from the inlet 1'9b passes through the donut-shaped cavity 1'9C and enters the reaction tube 1.
1 and the liner pipe 17. Each of the supplied gases flows downward from the top of the drawing and is discharged to an exhaust port 12a formed in the base 12.
反応管１１と基板ホルダー１４との間には石英から成る
ライナー管１７が配置され、このライナー管１７の内壁
面１７ａは、基板ホルダー１４のほぼ六角錐状の外周面
とほぼ相似する六角錐状に形成されている。このため、
本装置を基台１２に対して水平な平面により切断して得
られる第２図の横断面図に示されるように、基板ホルダ
ー１４の各面１４ａからライナー管１７の内壁面１７ａ
までの水平距離はどこの位置においてもほぼ等しくなり
、各面１４ａ上に保持された各基板１６の表面から内壁
面１７ａまでの距離りは、基板１６の表面の位置にかか
わらずほぼ一定のものに設定される。このため、ライナ
ー管１７の内壁面１７ａと基板ホルダー１４の外周面と
の間に形成される各空間体積は、基板ホルダー１４の外
周に沿ってほぼ等しくなり、基板ホルダー１４の外周に
沿う各位置におけるガスの流速はほぼ等しくなる。A liner tube 17 made of quartz is arranged between the reaction tube 11 and the substrate holder 14, and the inner wall surface 17a of the liner tube 17 has a hexagonal pyramidal shape that is almost similar to the approximately hexagonal pyramidal outer peripheral surface of the substrate holder 14. is formed. For this reason,
As shown in the cross-sectional view of FIG. 2 obtained by cutting this device along a plane horizontal to the base 12, from each surface 14a of the substrate holder 14 to the inner wall surface 17a of the liner tube 17.
The horizontal distance from the surface of each substrate 16 held on each surface 14a to the inner wall surface 17a is approximately constant regardless of the position of the surface of the substrate 16. is set to Therefore, each space volume formed between the inner wall surface 17a of the liner tube 17 and the outer circumferential surface of the substrate holder 14 is approximately equal along the outer circumference of the substrate holder 14, and at each position along the outer circumference of the substrate holder 14. The gas flow velocities at are approximately equal.
また、本装置を基台１２に対して垂直な平面により切断
して得られる、基板ホルダー１４の表面からライナー管
１７の内壁面１７ａまでの距離は、第１図に示されるよ
うに、基板ホルダー１４の上部位置における距離Ｈ１が
この下部位置における距離Ｈ２よりも多少長くなる（Ｈ
ｌ＞Ｈ２）ように形成されている。このため、ライナー
管１７の内壁面１７ａと基板ホルダー１４の外周面との
間に形成される空間体積は、基板ホルダー１４の上部周
辺の短い外周に沿った空間体積と下部周辺の長い外周に
沿った空間体積とがほぼ等しくなり、基板ホルダー１４
の上下方向に沿うガスの流速はほぼ等しくなる。Furthermore, the distance from the surface of the substrate holder 14 to the inner wall surface 17a of the liner tube 17, which is obtained by cutting this device along a plane perpendicular to the base 12, is as shown in FIG. The distance H1 at the upper position of No. 14 is somewhat longer than the distance H2 at the lower position (H
l>H2). Therefore, the space volume formed between the inner wall surface 17a of the liner tube 17 and the outer circumference surface of the substrate holder 14 is divided into the space volume formed along the short outer circumference around the upper part of the substrate holder 14 and the space volume formed along the long outer circumference around the lower part of the substrate holder 14. The spatial volume of the substrate holder 14 becomes almost equal.
The gas flow velocity along the vertical direction is almost equal.
また、ライナー管１７の底部に固定されたライナー支持
枠１８は軸１５に固定されているため、図示しないモー
タによって軸１５が回転されることにより、基板ホルダ
ー１４とライナー管１７とは、面１４ａと内壁面１７ａ
との相対位置を一定に保ちながら一体となって回転する
。Further, since the liner support frame 18 fixed to the bottom of the liner tube 17 is fixed to the shaft 15, when the shaft 15 is rotated by a motor (not shown), the substrate holder 14 and the liner tube 17 are separated from each other by the surface 14a. and inner wall surface 17a
It rotates as one while keeping the relative position constant.
このような構造において、基板ホルダー１４およびライ
ナー管１７は図示の矢印の向きに回転され、流入口１９
ａにはトリメチルガリウムやトリエチルガリウム等の原
料ガスが送り込まれ、流入口１９ｂには高純度水素等の
キャリアガスが送り込まれる。流入口１９ａに入った原
料ガスは、ライナー管１７と基板ホルダー１４との間隙
に導かれ、基板ホルダー１４の外表面に拡散される。こ
の際、送入された原料ガスは、基板ホルダー１４および
ライナー管１７とが一体となって回転されているため、
基板ホルダ−１４外周の特定部分にのみへ流入するとい
ったことは無く、基板ホルダー１４の外周に均一に流れ
込む。In such a structure, the substrate holder 14 and the liner tube 17 are rotated in the direction of the illustrated arrow, and the inlet 19
A raw material gas such as trimethyl gallium or triethyl gallium is fed into the inlet 19b, and a carrier gas such as high-purity hydrogen is fed into the inlet 19b. The raw material gas that has entered the inlet 19a is guided into the gap between the liner pipe 17 and the substrate holder 14, and is diffused onto the outer surface of the substrate holder 14. At this time, the supplied raw material gas is rotated together with the substrate holder 14 and the liner tube 17, so that
The water does not flow only into a specific part of the outer periphery of the substrate holder 14, but flows uniformly around the outer periphery of the substrate holder 14.
また、原料ガスは、流入口１９ｃに常時送入されるキャ
リアガスと共に排気口１２ａへ排出されるため、基板ホ
ルダー１４の下部付近に原料ガスが澱むこと無く、従っ
て、エピタキシャル成長させる薄膜の種類を異ならせる
ために種類の違った原料ガスを流入口１９ａに送入して
も、異種原料ガスが混ざり合うということは無い。Further, since the raw material gas is discharged to the exhaust port 12a together with the carrier gas that is constantly fed into the inlet 19c, the raw material gas does not accumulate near the bottom of the substrate holder 14, and therefore the type of thin film to be epitaxially grown can be changed. Even if different kinds of raw material gases are fed into the inlet 19a in order to increase the temperature, the different kinds of raw material gases will not mix.
さらに、原料ガスの流速は、前述したように基板ホルダ
−１４外周のあらゆる位置においてほぼ等しくなるため
、基板ホルダー１４の各面１４ａに保持された各基板１
６表面にはほぼ等量の原料ガスが吹き付けられる。また
、各基板１６は加熱抵抗器等により加熱され、各基板１
６上において原料ガスが熱分解され、各基板１６上には
ガリウム砒素等の有機金属の薄膜が均一の厚さになって
エピタキシャル成長される。Furthermore, since the flow velocity of the raw material gas is approximately equal at all positions on the outer circumference of the substrate holder 14 as described above, each substrate 1 held on each surface 14a of the substrate holder 14
6. Approximately equal amounts of raw material gas are blown onto the surface. Further, each substrate 16 is heated by a heating resistor or the like, and each substrate 16 is heated by a heating resistor or the like.
The source gas is thermally decomposed on each substrate 16, and a thin film of an organic metal such as gallium arsenide is epitaxially grown to a uniform thickness on each substrate 16.
このように本実施例によれば、基板ホルダ１４の外周に
沿う各位置からライナー管１７の内壁面１７ａまでの距
離を等しくしたため、基板ホルダー１４の同一外周上に
置かれた各基板１６、つまり、面１４ａの上部に保持さ
れた各基板１６、並びに面１４ａの下部に保持された各
基板１６の表面上には、均一な厚さの有機金属の薄膜が
エピタキシャル成長されるはものとなる。さらに、基板
ホルダー１４の各面１４ａの上下方向に沿う各位置から
ライナー管１７の内壁面１７ａまでの距離を、基板ホル
ダ−１４上部の距離Ｈ１が下部の距離Ｈ２よりも長くし
たため、各面１４ａの上下方向に２組の基板１６を置い
ても、これら各基板１６表面上にエピタキシャル成長さ
れる膜厚は均一なものとなる。As described above, according to this embodiment, since the distances from each position along the outer circumference of the substrate holder 14 to the inner wall surface 17a of the liner tube 17 are made equal, each substrate 16 placed on the same outer circumference of the substrate holder 14, that is, A thin organometallic film of uniform thickness is epitaxially grown on the surface of each substrate 16 held above surface 14a and on the surface of each substrate 16 held below surface 14a. Furthermore, since the distance from each position along the vertical direction of each surface 14a of the substrate holder 14 to the inner wall surface 17a of the liner tube 17 is made longer than the distance H1 at the upper part of the substrate holder 14 than the distance H2 at the lower part, each surface 14a Even if two sets of substrates 16 are placed vertically, the thickness of the film epitaxially grown on the surface of each substrate 16 will be uniform.
従って、従来より多数の基板１６について均一の厚さの
有機金属薄膜を同時に形成させることが可能となり、製
造過程における歩留まり性は向上して生産性は上がり、
製造コストは低減される。Therefore, it is now possible to form organic metal thin films of uniform thickness on a larger number of substrates 16 at the same time than ever before, and the yield in the manufacturing process is improved, increasing productivity.
Manufacturing costs are reduced.
以上説明したように本発明は、基板ホルダーの外周面と
ほぼ相似するように形成された内壁面を有するライナー
管をこの内壁面一と基板ホルダーの外周面とが対峙する
ようにバレル形反応管と基板ホルダーとの間に設けたこ
とにより、各基板表面を通過する原料ガスの流速は各基
板表面上の位置にかかわらずほぼ一定となる。As explained above, the present invention provides a barrel-shaped reaction tube in which a liner tube having an inner wall surface formed to be substantially similar to the outer circumferential surface of a substrate holder is arranged in a barrel-shaped reaction tube such that the inner wall surface faces the outer circumferential surface of the substrate holder. By providing the source gas between the substrate holder and the substrate holder, the flow rate of the raw material gas passing through the surface of each substrate is almost constant regardless of the position on the surface of each substrate.
このため、各基板表面に吹き付けられる原料ガスの量は
等しくなり、気相成長されて得られる薄膜の厚さは均一
になり、薄膜の製造過程における歩留まり性は向上して
生産性は上がり、製造コストは低減されるという効果を
有する。Therefore, the amount of raw material gas sprayed onto the surface of each substrate becomes equal, the thickness of the thin film obtained by vapor phase growth becomes uniform, and the yield in the thin film manufacturing process improves, productivity increases, and This has the effect of reducing costs.
第１図は、本発明の一実施例を表す装置の縦断面図、第
２図は、この実施例の装置の横断面図、第３図は、従来
の装置の縦断面図、第４図は、従来の装置の横断面図で
ある。
１１・・・石英バレル形反応管、１２・・・基台、１４
・・・基板ホルダー １５・・・軸、１６・・・基板、
１７・・・石英ライナー管、１８・・・ライナー管支持
枠、１９・・・ガス分離供給装置。
特許出願人 住友電気工業株式会社
代理人弁理士 長谷用 芳 樹Ｘ発明の一実先
例の縦断面図
第１図FIG. 1 is a longitudinal cross-sectional view of a device representing an embodiment of the present invention, FIG. 2 is a cross-sectional view of the device of this embodiment, FIG. 3 is a vertical cross-sectional view of a conventional device, and FIG. 1 is a cross-sectional view of a conventional device. 11... Quartz barrel-shaped reaction tube, 12... Base, 14
... Board holder 15... Axis, 16... Board,
17... Quartz liner tube, 18... Liner tube support frame, 19... Gas separation supply device. Patent Applicant Sumitomo Electric Industries Co., Ltd. Representative Patent Attorney Yoshiki Hase
Claims (1)
反応管の内部に備え、この基板ホルダーの多面上に複数
の基板を保持させ、この基板表面上に薄膜を気相成長さ
せるバレル形の有機金属気相成長装置において、 前記基板ホルダーの外周面とほぼ相似するように形成さ
れた内壁面を有するライナー管をこの内壁面と前記外周
面とが対峙するように前記バレル形反応管と基板ホルダ
ーとの間に設け、このライナー管と基板ホルダーとの間
隙に原料ガスを供給し、前記バレル形反応管とこのライ
ナー管との間隙にキャリアガスを供給することにより、
前記基板表面に薄膜を気相成長させることを特徴とする
有機金属気相成長装置。 ２、基板ホルダーとライナー管とは基板ホルダーの外周
面とライナー管の内壁面との相対位置を保持しながら同
一回転速度で回転されることを特徴とする請求項１記載
の有機金属気相成長装置。[Claims] 1. A substrate holder with multiple surfaces formed on the outer peripheral surface is provided inside the barrel-shaped reaction tube, a plurality of substrates are held on the multiple surfaces of the substrate holder, and a thin film is deposited on the surface of the substrate. In a barrel-shaped organometallic vapor phase epitaxy apparatus for phase growth, a liner tube having an inner wall surface formed to be substantially similar to the outer circumferential surface of the substrate holder is arranged so that the inner wall surface and the outer circumferential surface face each other. By providing a material gas between the barrel-shaped reaction tube and the substrate holder, supplying a raw material gas to the gap between the liner tube and the substrate holder, and supplying a carrier gas to the gap between the barrel-shaped reaction tube and the liner tube,
A metal organic vapor phase epitaxy apparatus characterized in that a thin film is grown in a vapor phase on the surface of the substrate. 2. The organic metal vapor phase growth method according to claim 1, wherein the substrate holder and the liner tube are rotated at the same rotational speed while maintaining the relative positions of the outer peripheral surface of the substrate holder and the inner wall surface of the liner tube. Device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30030688A JPH02146725A (en) | 1988-11-28 | 1988-11-28 | Organic metal vapor growth device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP30030688A JPH02146725A (en) | 1988-11-28 | 1988-11-28 | Organic metal vapor growth device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH02146725A true JPH02146725A (en) | 1990-06-05 |
Family
ID=17883189
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP30030688A Pending JPH02146725A (en) | 1988-11-28 | 1988-11-28 | Organic metal vapor growth device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH02146725A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5833754A (en) * | 1990-11-09 | 1998-11-10 | Fujitsu Limited | Deposition apparatus for growing a material with reduced hazard |
| US10453735B2 (en) * | 2017-09-26 | 2019-10-22 | Kokusai Electric Corporation | Substrate processing apparatus, reaction tube, semiconductor device manufacturing method, and recording medium |
-
1988
- 1988-11-28 JP JP30030688A patent/JPH02146725A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5833754A (en) * | 1990-11-09 | 1998-11-10 | Fujitsu Limited | Deposition apparatus for growing a material with reduced hazard |
| US10453735B2 (en) * | 2017-09-26 | 2019-10-22 | Kokusai Electric Corporation | Substrate processing apparatus, reaction tube, semiconductor device manufacturing method, and recording medium |
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