JPS6113248B2 - - Google Patents
Info
- Publication number
- JPS6113248B2 JPS6113248B2 JP51112740A JP11274076A JPS6113248B2 JP S6113248 B2 JPS6113248 B2 JP S6113248B2 JP 51112740 A JP51112740 A JP 51112740A JP 11274076 A JP11274076 A JP 11274076A JP S6113248 B2 JPS6113248 B2 JP S6113248B2
- Authority
- JP
- Japan
- Prior art keywords
- voltage
- circuit
- transistor
- mos
- mos transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 101100478187 Arabidopsis thaliana MOS4 gene Proteins 0.000 description 6
- 101100262446 Arabidopsis thaliana UBA1 gene Proteins 0.000 description 5
- 101150090280 MOS1 gene Proteins 0.000 description 5
- 101100401568 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) MIC10 gene Proteins 0.000 description 5
- 230000010355 oscillation Effects 0.000 description 4
- 101100461812 Arabidopsis thaliana NUP96 gene Proteins 0.000 description 3
- 102100030393 G-patch domain and KOW motifs-containing protein Human genes 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 239000010408 film Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 101710116852 Molybdenum cofactor sulfurase 1 Proteins 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Landscapes
- Measurement Of Current Or Voltage (AREA)
- Control Of Electrical Variables (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11274076A JPS5337842A (en) | 1976-09-20 | 1976-09-20 | Electronic circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11274076A JPS5337842A (en) | 1976-09-20 | 1976-09-20 | Electronic circuit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5337842A JPS5337842A (en) | 1978-04-07 |
| JPS6113248B2 true JPS6113248B2 (de) | 1986-04-12 |
Family
ID=14594352
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11274076A Granted JPS5337842A (en) | 1976-09-20 | 1976-09-20 | Electronic circuit |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5337842A (de) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5812031Y2 (ja) * | 1978-07-17 | 1983-03-07 | 萬世工業株式会社 | ガスライタ−の炎調整体の抜け止め装置 |
| US4224539A (en) * | 1978-09-05 | 1980-09-23 | Motorola, Inc. | FET Voltage level detecting circuit |
| JPS55112618A (en) * | 1979-02-20 | 1980-08-30 | Nippon Precision Saakitsutsu Kk | Constant voltage circuit |
| US4300061A (en) * | 1979-03-15 | 1981-11-10 | National Semiconductor Corporation | CMOS Voltage regulator circuit |
| JPS55167269A (en) * | 1979-05-29 | 1980-12-26 | Takeda Chem Ind Ltd | Novel triisocyanate compound and its preparation |
| JPS5657336A (en) * | 1979-10-16 | 1981-05-19 | Nec Corp | Semiconductor integrated circuit |
| JPS58196464A (ja) * | 1982-05-11 | 1983-11-15 | Matsushita Electric Ind Co Ltd | 電圧降下検出回路 |
| JPS6041111A (ja) * | 1983-08-16 | 1985-03-04 | Toshiba Corp | 定電圧装置 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3508084A (en) * | 1967-10-06 | 1970-04-21 | Texas Instruments Inc | Enhancement-mode mos circuitry |
| JPS5156945A (de) * | 1974-11-13 | 1976-05-19 | Nippon Sankuru Kk |
-
1976
- 1976-09-20 JP JP11274076A patent/JPS5337842A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3508084A (en) * | 1967-10-06 | 1970-04-21 | Texas Instruments Inc | Enhancement-mode mos circuitry |
| JPS5156945A (de) * | 1974-11-13 | 1976-05-19 | Nippon Sankuru Kk |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5337842A (en) | 1978-04-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2616142B2 (ja) | 出力回路 | |
| US4714901A (en) | Temperature compensated complementary metal-insulator-semiconductor oscillator | |
| KR900004725B1 (ko) | 전원전압 강하회로 | |
| US4128816A (en) | Electronic circuit | |
| US4990847A (en) | Microcomputer | |
| KR0126911B1 (ko) | 기준전압 발생회로 및 발생방법 | |
| JP2573266B2 (ja) | 発振回路 | |
| JPS6113248B2 (de) | ||
| US4476428A (en) | Power supply device | |
| US3959744A (en) | CMOS oscillator having bias circuit outside oscillator feedback loop | |
| US6630717B2 (en) | CMOS semiconductor circuit with reverse bias applied for reduced power consumption | |
| JP4790945B2 (ja) | チャージポンプ回路 | |
| US6229405B1 (en) | Low-voltage oscillation amplifying circuit | |
| US5467048A (en) | Semiconductor device with two series-connected complementary misfets of same conduction type | |
| JP3641345B2 (ja) | 基板バイアス効果を利用した遅延回路 | |
| US4296490A (en) | Crystal oscillation-type electronic timepiece | |
| JP4750599B2 (ja) | 電子回路 | |
| JPS61211715A (ja) | 太陽電池付小型電子機器 | |
| JPS5880564A (ja) | 電圧検出回路 | |
| JP2566931B2 (ja) | レベル比較器 | |
| JPH0259911A (ja) | 安定化電源回路 | |
| JPH0241042B2 (de) | ||
| KR830000659Y1 (ko) | 시계용 시-모오스(c-mos)발진회로 | |
| JPS6214733Y2 (de) | ||
| JPH06204741A (ja) | 発振回路 |