JPS5657336A - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuitInfo
- Publication number
- JPS5657336A JPS5657336A JP13311979A JP13311979A JPS5657336A JP S5657336 A JPS5657336 A JP S5657336A JP 13311979 A JP13311979 A JP 13311979A JP 13311979 A JP13311979 A JP 13311979A JP S5657336 A JPS5657336 A JP S5657336A
- Authority
- JP
- Japan
- Prior art keywords
- emitter
- circuit
- base
- threshold voltage
- trq1c
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
- H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
- H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
- H03K19/09448—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET in combination with bipolar transistors [BIMOS]
Landscapes
- Engineering & Computer Science (AREA)
- Logic Circuits (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Computing Systems (AREA)
- General Engineering & Computer Science (AREA)
- Mathematical Physics (AREA)
- Control Of Electrical Variables (AREA)
Abstract
PURPOSE:To facilitate an easy formation of an integrated circuit into an LSI, by producing the threshold voltage through the emitter of the bipolar transistor having an emitter-follower working and then connecting the serial circuit of the insulated gate transistor and the resistance to the base of the bipolar transistor. CONSTITUTION:The threshold voltage is generated at the emitter of the bipolar transistor TRQ1A having an emitter-follower working in the threshold voltage generating circuit A, and the serial circuit of the insulated gate TRQ2A-Q4A puls the resistances R1A and R2A is connected to the base of the TRQ1A. The threshold voltage VRDA given from the circuit A is applied to the base of the TRQ2C of the insulated gate TRQ1C and Q2C which switch the current of the differential Amp of the current switching logic circuit B. At the same time, the signal supplied from the signal input terminal IN is applied to the base of the TRQ1C, and the drain of the TRQ1C is applied to the gate of the bipolar TRQ3C having an emitter-follower working. And the signal is delivered through the signal output terminal OUT of the emitter of the TRQ3C. Then both the circuit A and the logic circuit B are formed into an LSI each, thus holding the prescribed temperature coefficient and voltage fluctuation coefficient.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13311979A JPS5657336A (en) | 1979-10-16 | 1979-10-16 | Semiconductor integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13311979A JPS5657336A (en) | 1979-10-16 | 1979-10-16 | Semiconductor integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5657336A true JPS5657336A (en) | 1981-05-19 |
Family
ID=15097226
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13311979A Pending JPS5657336A (en) | 1979-10-16 | 1979-10-16 | Semiconductor integrated circuit |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5657336A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4875195A (en) * | 1986-05-06 | 1989-10-17 | Kabushiki Kaisha Toshiba | Semiconductor device with a reference voltage generator |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS496944B1 (en) * | 1970-08-04 | 1974-02-18 | ||
JPS5337842A (en) * | 1976-09-20 | 1978-04-07 | Nippon Precision Saakitsutsu Kk | Electronic circuit |
-
1979
- 1979-10-16 JP JP13311979A patent/JPS5657336A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS496944B1 (en) * | 1970-08-04 | 1974-02-18 | ||
JPS5337842A (en) * | 1976-09-20 | 1978-04-07 | Nippon Precision Saakitsutsu Kk | Electronic circuit |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4875195A (en) * | 1986-05-06 | 1989-10-17 | Kabushiki Kaisha Toshiba | Semiconductor device with a reference voltage generator |
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