JPS5657336A - Semiconductor integrated circuit - Google Patents

Semiconductor integrated circuit

Info

Publication number
JPS5657336A
JPS5657336A JP13311979A JP13311979A JPS5657336A JP S5657336 A JPS5657336 A JP S5657336A JP 13311979 A JP13311979 A JP 13311979A JP 13311979 A JP13311979 A JP 13311979A JP S5657336 A JPS5657336 A JP S5657336A
Authority
JP
Japan
Prior art keywords
emitter
circuit
base
threshold voltage
trq1c
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13311979A
Other languages
Japanese (ja)
Inventor
Joji Nokubo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP13311979A priority Critical patent/JPS5657336A/en
Publication of JPS5657336A publication Critical patent/JPS5657336A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
    • H03K19/08—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices
    • H03K19/094—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors
    • H03K19/0944—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET
    • H03K19/09448—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using semiconductor devices using field-effect transistors using MOSFET or insulated gate field-effect transistors, i.e. IGFET in combination with bipolar transistors [BIMOS]

Landscapes

  • Engineering & Computer Science (AREA)
  • Logic Circuits (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Control Of Electrical Variables (AREA)

Abstract

PURPOSE:To facilitate an easy formation of an integrated circuit into an LSI, by producing the threshold voltage through the emitter of the bipolar transistor having an emitter-follower working and then connecting the serial circuit of the insulated gate transistor and the resistance to the base of the bipolar transistor. CONSTITUTION:The threshold voltage is generated at the emitter of the bipolar transistor TRQ1A having an emitter-follower working in the threshold voltage generating circuit A, and the serial circuit of the insulated gate TRQ2A-Q4A puls the resistances R1A and R2A is connected to the base of the TRQ1A. The threshold voltage VRDA given from the circuit A is applied to the base of the TRQ2C of the insulated gate TRQ1C and Q2C which switch the current of the differential Amp of the current switching logic circuit B. At the same time, the signal supplied from the signal input terminal IN is applied to the base of the TRQ1C, and the drain of the TRQ1C is applied to the gate of the bipolar TRQ3C having an emitter-follower working. And the signal is delivered through the signal output terminal OUT of the emitter of the TRQ3C. Then both the circuit A and the logic circuit B are formed into an LSI each, thus holding the prescribed temperature coefficient and voltage fluctuation coefficient.
JP13311979A 1979-10-16 1979-10-16 Semiconductor integrated circuit Pending JPS5657336A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13311979A JPS5657336A (en) 1979-10-16 1979-10-16 Semiconductor integrated circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13311979A JPS5657336A (en) 1979-10-16 1979-10-16 Semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
JPS5657336A true JPS5657336A (en) 1981-05-19

Family

ID=15097226

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13311979A Pending JPS5657336A (en) 1979-10-16 1979-10-16 Semiconductor integrated circuit

Country Status (1)

Country Link
JP (1) JPS5657336A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4875195A (en) * 1986-05-06 1989-10-17 Kabushiki Kaisha Toshiba Semiconductor device with a reference voltage generator

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS496944B1 (en) * 1970-08-04 1974-02-18
JPS5337842A (en) * 1976-09-20 1978-04-07 Nippon Precision Saakitsutsu Kk Electronic circuit

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS496944B1 (en) * 1970-08-04 1974-02-18
JPS5337842A (en) * 1976-09-20 1978-04-07 Nippon Precision Saakitsutsu Kk Electronic circuit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4875195A (en) * 1986-05-06 1989-10-17 Kabushiki Kaisha Toshiba Semiconductor device with a reference voltage generator

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