JPS6113222B2 - - Google Patents

Info

Publication number
JPS6113222B2
JPS6113222B2 JP52115485A JP11548577A JPS6113222B2 JP S6113222 B2 JPS6113222 B2 JP S6113222B2 JP 52115485 A JP52115485 A JP 52115485A JP 11548577 A JP11548577 A JP 11548577A JP S6113222 B2 JPS6113222 B2 JP S6113222B2
Authority
JP
Japan
Prior art keywords
compound
rays
layer
bismuth oxide
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP52115485A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5343531A (en
Inventor
Tooman Herumuuto
Guraapumaiyaa Kurisuta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of JPS5343531A publication Critical patent/JPS5343531A/ja
Publication of JPS6113222B2 publication Critical patent/JPS6113222B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00—Recording-members for original recording by exposure, e.g. to light, to heat or to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02—Charge-receiving layers
    • G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
    • G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Measurement Of Radiation (AREA)
  • Photoreceptors In Electrophotography (AREA)
  • Combination Of More Than One Step In Electrophotography (AREA)
  • Apparatus For Radiation Diagnosis (AREA)
  • Light Receiving Elements (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Developing Agents For Electrophotography (AREA)
JP11548577A 1976-09-30 1977-09-26 Method of and device for using bismuth oxide compound Granted JPS5343531A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2644168A DE2644168C3 (de) 1976-09-30 1976-09-30 Verwendung einer kristallinen Wismutoxid-Verbindung der Zusammensetzung Bi↓10↓-14X↓1↓O↓n↓, sowie Vorrichtungen hierzu und Verfahren zu deren Herstellung

Publications (2)

Publication Number Publication Date
JPS5343531A JPS5343531A (en) 1978-04-19
JPS6113222B2 true JPS6113222B2 (enExample) 1986-04-12

Family

ID=5989329

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11548577A Granted JPS5343531A (en) 1976-09-30 1977-09-26 Method of and device for using bismuth oxide compound

Country Status (5)

Country Link
US (2) US4227084A (enExample)
JP (1) JPS5343531A (enExample)
DE (1) DE2644168C3 (enExample)
FR (1) FR2366583A1 (enExample)
GB (1) GB1551549A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006124272A (ja) * 2004-09-28 2006-05-18 Fuji Photo Film Co Ltd 放射線撮像パネルを構成する光導電層の製造方法
JP2007012842A (ja) * 2005-06-30 2007-01-18 Fujifilm Holdings Corp 光導電層および放射線撮像パネル

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2415086A1 (fr) * 1978-01-24 1979-08-17 Thomson Csf Materiau polycristallin de formule bi12sio20, procede de fabrication dudit materiau, et dispositif de detection de radiations utilisant ce materiau
JPS563754U (enExample) * 1979-06-21 1981-01-13
JPS565549A (en) * 1979-06-27 1981-01-21 Fuji Photo Film Co Ltd Electrophotograhic recording material
DE3116233A1 (de) * 1981-04-23 1982-11-11 Siemens AG, 1000 Berlin und 8000 München "anordnung zum herstellen eines koerperschnittbildes"
JPS5815586A (ja) * 1981-07-22 1983-01-28 Cosmo Co Ltd ビスブレ−カ−タ−ルを原料とするブロ−ンアスフアルトの製造法
JPS5858553A (ja) * 1981-10-01 1983-04-07 Fuji Photo Film Co Ltd Ｘ線電子写真感光体およびその製造方法
DE3151155A1 (de) * 1981-12-23 1983-06-30 Siemens AG, 1000 Berlin und 8000 München Roengtenbildwandlungseinrichtung
DE3235076A1 (de) * 1982-09-22 1984-03-22 Siemens AG, 1000 Berlin und 8000 München Aufnahme- und auslesevorrichtung fuer roentgenstrahlen
FR2601499B1 (fr) * 1986-07-08 1988-09-30 Thomson Csf Detecteur d'image a photoconducteur a memoire
EP0407945B1 (en) * 1989-07-11 1995-01-04 Sony Corporation Method of heat-treating an oxide optical crystal and a heat treatment apparatus for carrying out the same
JP4252918B2 (ja) * 2004-03-24 2009-04-08 富士フイルム株式会社 放射線撮像パネルを構成する光導電層の製造方法
US20060051287A1 (en) * 2004-09-03 2006-03-09 Fuji Photo Film Co., Ltd. Processes for producing Bi12MO20 precursors, Bi12MO20 particles, and photo-conductor layers
JP2006240953A (ja) * 2005-03-07 2006-09-14 Fuji Photo Film Co Ltd Ｂｉ１２ＴｉＯ２０焼結体および光導電層
JP4782445B2 (ja) * 2005-03-09 2011-09-28 富士フイルム株式会社 Ｂｉ１２ＭＯ２０粉体の製造方法および放射線撮像パネルを構成する光導電層
JP2006261203A (ja) * 2005-03-15 2006-09-28 Fuji Photo Film Co Ltd 放射線撮像パネルを構成する光導電層および放射線撮像パネル
JP2006261202A (ja) * 2005-03-15 2006-09-28 Fuji Photo Film Co Ltd 放射線撮像パネルを構成する光導電層および放射線撮像パネル
JP2007005623A (ja) * 2005-06-24 2007-01-11 Fujifilm Holdings Corp 放射線撮像パネルを構成する光導電層および放射線撮像パネル
EP2100947A1 (en) 2008-03-14 2009-09-16 The Procter and Gamble Company Automatic dishwashing detergent composition
DE102009013301A1 (de) * 2009-03-16 2010-09-30 Siemens Aktiengesellschaft Röntgen- oder Gammadetektorarray
US9000401B2 (en) 2010-07-07 2015-04-07 Institut National D'optique Fiber optic radiochromic dosimeter probe and method to make the same

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE814193C (de) * 1950-02-21 1951-09-20 Immanuel Dipl-Ing Dr Broser Verfahren zur Erzielung einer bestimmten Abhaengigkeit zwischen absorbierter Energie und Photostrom an groesseren einheitlichen Kristallen oder kristallinen Schichten aus Chalkogeniden von Zn, Cd, Hg oder einem Gemisch aus diesen
US2862815A (en) * 1953-10-01 1958-12-02 Rca Corp Electrophotographic member
US3507646A (en) * 1965-12-27 1970-04-21 Xerox Corp Electrophotographic process using a single phase photoconductive glass imaging layer
US3470100A (en) * 1966-01-25 1969-09-30 Bell Telephone Labor Inc Growth of piezoelectric bismuth oxide
US3864725A (en) * 1971-03-09 1975-02-04 Innotech Corp Photoconductive junction device employing a glassy amorphous material as an active layer
US3754965A (en) * 1971-04-05 1973-08-28 Varian Associates A method for making an electrophotographic plate
US3830648A (en) * 1971-04-05 1974-08-20 Varian Associates Photoconductor-glass binder plate with insulating resin in pores
US3936397A (en) * 1974-02-01 1976-02-03 Owens-Illinois, Inc. Semiconductive glass-ceramic articles
FR2305743A1 (fr) * 1975-03-25 1976-10-22 Thomson Csf Dispositif de detection de rayons x

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006124272A (ja) * 2004-09-28 2006-05-18 Fuji Photo Film Co Ltd 放射線撮像パネルを構成する光導電層の製造方法
JP2007012842A (ja) * 2005-06-30 2007-01-18 Fujifilm Holdings Corp 光導電層および放射線撮像パネル

Also Published As

Publication number Publication date
DE2644168B2 (de) 1980-10-02
US4227084A (en) 1980-10-07
JPS5343531A (en) 1978-04-19
FR2366583A1 (fr) 1978-04-28
US4254200A (en) 1981-03-03
GB1551549A (en) 1979-08-30
DE2644168A1 (de) 1978-04-06
FR2366583B1 (enExample) 1981-05-08
DE2644168C3 (de) 1981-06-11

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