DE69015715T2 - Verfahren zur Wärmebehandlung eines optischen Oxidkristalles und Wärmebehandlungsvorrichtung dafür. - Google Patents

Verfahren zur Wärmebehandlung eines optischen Oxidkristalles und Wärmebehandlungsvorrichtung dafür.

Info

Publication number
DE69015715T2
DE69015715T2 DE69015715T DE69015715T DE69015715T2 DE 69015715 T2 DE69015715 T2 DE 69015715T2 DE 69015715 T DE69015715 T DE 69015715T DE 69015715 T DE69015715 T DE 69015715T DE 69015715 T2 DE69015715 T2 DE 69015715T2
Authority
DE
Germany
Prior art keywords
treatment apparatus
apparatus therefor
oxide crystal
heat treatment
heat
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69015715T
Other languages
English (en)
Other versions
DE69015715D1 (de
Inventor
Hitoshi Tamada
Masaki Saitoh
Chiharu Isobe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP1178586A external-priority patent/JP2840762B2/ja
Priority claimed from JP17965589A external-priority patent/JPH0344016A/ja
Priority claimed from JP1179656A external-priority patent/JP2987846B2/ja
Priority claimed from JP33923489A external-priority patent/JP2903581B2/ja
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE69015715D1 publication Critical patent/DE69015715D1/de
Application granted granted Critical
Publication of DE69015715T2 publication Critical patent/DE69015715T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F1/00—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties
    • H01F1/01—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials
    • H01F1/03—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity
    • H01F1/12—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials
    • H01F1/34—Magnets or magnetic bodies characterised by the magnetic materials therefor; Selection of materials for their magnetic properties of inorganic materials characterised by their coercivity of soft-magnetic materials non-metallic substances, e.g. ferrites
    • H01F1/342—Oxides
    • H01F1/344—Ferrites, e.g. having a cubic spinel structure (X2+O)(Y23+O3), e.g. magnetite Fe3O4
    • H01F1/346—[(TO4) 3] with T= Si, Al, Fe, Ga
DE69015715T 1989-07-11 1990-07-09 Verfahren zur Wärmebehandlung eines optischen Oxidkristalles und Wärmebehandlungsvorrichtung dafür. Expired - Fee Related DE69015715T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP1178586A JP2840762B2 (ja) 1989-07-11 1989-07-11 光デバイス用磁性ガーネットの製造方法
JP17965589A JPH0344016A (ja) 1989-07-12 1989-07-12 磁性ガーネットの製造方法
JP1179656A JP2987846B2 (ja) 1989-07-12 1989-07-12 酸化物薄膜のオゾン処理装置
JP33923489A JP2903581B2 (ja) 1989-12-27 1989-12-27 光導波路装置の製造方法

Publications (2)

Publication Number Publication Date
DE69015715D1 DE69015715D1 (de) 1995-02-16
DE69015715T2 true DE69015715T2 (de) 1995-08-17

Family

ID=27474841

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69015715T Expired - Fee Related DE69015715T2 (de) 1989-07-11 1990-07-09 Verfahren zur Wärmebehandlung eines optischen Oxidkristalles und Wärmebehandlungsvorrichtung dafür.

Country Status (4)

Country Link
US (1) US5426310A (de)
EP (1) EP0407945B1 (de)
KR (1) KR100214789B1 (de)
DE (1) DE69015715T2 (de)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6333809B1 (en) * 1996-02-21 2001-12-25 Matsushita Electric Industrial Co., Ltd. Magneto-optical element
JPH09324144A (ja) * 1996-04-03 1997-12-16 Dainippon Toryo Co Ltd 近赤外線カットフィルター形成用組成物及び近赤外線カットフィルター
JPH10194900A (ja) * 1996-12-27 1998-07-28 Ngk Insulators Ltd 光学単結晶膜の製造方法、光学単結晶膜および光学部品
JP2001110635A (ja) 1999-10-04 2001-04-20 Minebea Co Ltd 磁気光学体及びその製造方法
TW514996B (en) * 1999-12-10 2002-12-21 Tokyo Electron Ltd Processing apparatus with a chamber having therein a high-corrosion-resistant sprayed film
US7137353B2 (en) * 2002-09-30 2006-11-21 Tokyo Electron Limited Method and apparatus for an improved deposition shield in a plasma processing system
US6798519B2 (en) 2002-09-30 2004-09-28 Tokyo Electron Limited Method and apparatus for an improved optical window deposition shield in a plasma processing system
US7166166B2 (en) 2002-09-30 2007-01-23 Tokyo Electron Limited Method and apparatus for an improved baffle plate in a plasma processing system
US7147749B2 (en) * 2002-09-30 2006-12-12 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate with deposition shield in a plasma processing system
US7166200B2 (en) * 2002-09-30 2007-01-23 Tokyo Electron Limited Method and apparatus for an improved upper electrode plate in a plasma processing system
US6837966B2 (en) * 2002-09-30 2005-01-04 Tokyo Electron Limeted Method and apparatus for an improved baffle plate in a plasma processing system
US7204912B2 (en) * 2002-09-30 2007-04-17 Tokyo Electron Limited Method and apparatus for an improved bellows shield in a plasma processing system
CN1249789C (zh) * 2002-11-28 2006-04-05 东京毅力科创株式会社 等离子体处理容器内部件
WO2004095532A2 (en) * 2003-03-31 2004-11-04 Tokyo Electron Limited A barrier layer for a processing element and a method of forming the same
JP4597972B2 (ja) 2003-03-31 2010-12-15 東京エレクトロン株式会社 処理部材上に隣接するコーティングを接合する方法。
US7552521B2 (en) 2004-12-08 2009-06-30 Tokyo Electron Limited Method and apparatus for improved baffle plate
US7601242B2 (en) 2005-01-11 2009-10-13 Tokyo Electron Limited Plasma processing system and baffle assembly for use in plasma processing system
CN102483555A (zh) * 2009-10-16 2012-05-30 松下电器产业株式会社 光学元件的制造方法
US9829728B2 (en) 2015-11-19 2017-11-28 Massachusetts Institute Of Technology Method for forming magneto-optical films for integrated photonic devices

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3836632A (en) * 1972-07-28 1974-09-17 Hitachi Ltd Method for improving transparency of gadolinium molybdate single crystal
US3932299A (en) * 1972-10-30 1976-01-13 Rca Corporation Method for the reduction of iron in iron-doped lithium niobate crystals
US4056304A (en) * 1975-03-06 1977-11-01 Rca Corporation Light modulation employing single crystal optical waveguides of niobium-doped lithium tantalate
DE2644168C3 (de) * 1976-09-30 1981-06-11 Siemens AG, 1000 Berlin und 8000 München Verwendung einer kristallinen Wismutoxid-Verbindung der Zusammensetzung Bi↓10↓-14X↓1↓O↓n↓, sowie Vorrichtungen hierzu und Verfahren zu deren Herstellung
US4315832A (en) * 1979-03-05 1982-02-16 Hughes Aircraft Company Process for increasing laser crystal fluorescence yield by controlled atmosphere processing
US4318741A (en) * 1980-06-02 1982-03-09 Bell Telephone Laboratories, Incorporated Rare earth metal stannides
JPS63113507A (ja) * 1986-10-31 1988-05-18 Hitachi Ltd 光導波路およびその製造法
JPH01115857A (ja) * 1987-10-13 1989-05-09 Dow Corning Corp 超電導物質の製造方法
US4880771A (en) * 1988-02-12 1989-11-14 American Telephone And Telegraph Company, At&T Bell Laboratories Bismuth-lead-strontium-calcium-cuprate superconductors
US5071830A (en) * 1988-08-31 1991-12-10 Superconductor Technologies, Inc. Metalorganic deposition method for forming epitaxial thallium-based copper oxide superconducting films
US5024992A (en) * 1988-10-28 1991-06-18 The Regents Of The University Of California Preparation of highly oxidized RBa2 Cu4 O8 superconductors
US5166131A (en) * 1988-12-05 1992-11-24 Massachusetts Institute Of Technology Methods for processing superconducting materials
US5057488A (en) * 1990-02-12 1991-10-15 General Electric Company Synthesis of Bi-Pb-Ca-Sr-Cu-O superconductive material

Also Published As

Publication number Publication date
DE69015715D1 (de) 1995-02-16
EP0407945B1 (de) 1995-01-04
KR100214789B1 (ko) 1999-08-02
EP0407945A1 (de) 1991-01-16
US5426310A (en) 1995-06-20
KR910003699A (ko) 1991-02-28

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Legal Events

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8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: PATENTANWAELTE MUELLER & HOFFMANN, 81667 MUENCHEN

8339 Ceased/non-payment of the annual fee