JPS61131526A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS61131526A
JPS61131526A JP59254364A JP25436484A JPS61131526A JP S61131526 A JPS61131526 A JP S61131526A JP 59254364 A JP59254364 A JP 59254364A JP 25436484 A JP25436484 A JP 25436484A JP S61131526 A JPS61131526 A JP S61131526A
Authority
JP
Japan
Prior art keywords
layer
amorphous
substrate
gaaz
crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59254364A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0464455B2 (enExample
Inventor
Junji Saito
斎藤　淳二
Akihiro Shibatomi
昭洋 柴富
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59254364A priority Critical patent/JPS61131526A/ja
Publication of JPS61131526A publication Critical patent/JPS61131526A/ja
Publication of JPH0464455B2 publication Critical patent/JPH0464455B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2911—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides

Landscapes

  • Recrystallisation Techniques (AREA)
  • Element Separation (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP59254364A 1984-11-30 1984-11-30 半導体装置の製造方法 Granted JPS61131526A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59254364A JPS61131526A (ja) 1984-11-30 1984-11-30 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59254364A JPS61131526A (ja) 1984-11-30 1984-11-30 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS61131526A true JPS61131526A (ja) 1986-06-19
JPH0464455B2 JPH0464455B2 (enExample) 1992-10-15

Family

ID=17263958

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59254364A Granted JPS61131526A (ja) 1984-11-30 1984-11-30 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS61131526A (enExample)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61203630A (ja) * 1985-03-07 1986-09-09 Nec Corp 半導体ウェーハとその製造方法
JPH01123410A (ja) * 1987-11-09 1989-05-16 Hitachi Ltd 化合物半導体基板及びその製造方法
JPH0461383A (ja) * 1990-06-29 1992-02-27 Nec Corp 半導体装置およびその製造方法
US5483089A (en) * 1992-08-11 1996-01-09 Mitsubishi Denki Kabushiki Kaisha Electrically isolated MESFET
US5786261A (en) * 1996-02-20 1998-07-28 Nec Corporation Method for fabricating semiconductor device having device isolation layer
JP2008306130A (ja) * 2007-06-11 2008-12-18 Sanken Electric Co Ltd 電界効果型半導体装置及びその製造方法
JP2011171595A (ja) * 2010-02-19 2011-09-01 Fujitsu Ltd 化合物半導体装置の製造方法及び化合物半導体装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS528672A (en) * 1975-07-09 1977-01-22 Jidosha Seiki Kogyo Kk Car washing device
JPS55901A (en) * 1977-10-07 1980-01-07 Hitachi Ltd Data buffer control system
JPS5769784A (en) * 1980-10-20 1982-04-28 Sanyo Electric Co Ltd Manufacture of semiconductor light emitting device
JPS59116192A (ja) * 1982-12-21 1984-07-04 Fujitsu Ltd 分子線結晶成長方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS528672A (en) * 1975-07-09 1977-01-22 Jidosha Seiki Kogyo Kk Car washing device
JPS55901A (en) * 1977-10-07 1980-01-07 Hitachi Ltd Data buffer control system
JPS5769784A (en) * 1980-10-20 1982-04-28 Sanyo Electric Co Ltd Manufacture of semiconductor light emitting device
JPS59116192A (ja) * 1982-12-21 1984-07-04 Fujitsu Ltd 分子線結晶成長方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61203630A (ja) * 1985-03-07 1986-09-09 Nec Corp 半導体ウェーハとその製造方法
JPH01123410A (ja) * 1987-11-09 1989-05-16 Hitachi Ltd 化合物半導体基板及びその製造方法
JPH0461383A (ja) * 1990-06-29 1992-02-27 Nec Corp 半導体装置およびその製造方法
US5483089A (en) * 1992-08-11 1996-01-09 Mitsubishi Denki Kabushiki Kaisha Electrically isolated MESFET
US5786261A (en) * 1996-02-20 1998-07-28 Nec Corporation Method for fabricating semiconductor device having device isolation layer
JP2008306130A (ja) * 2007-06-11 2008-12-18 Sanken Electric Co Ltd 電界効果型半導体装置及びその製造方法
JP2011171595A (ja) * 2010-02-19 2011-09-01 Fujitsu Ltd 化合物半導体装置の製造方法及び化合物半導体装置

Also Published As

Publication number Publication date
JPH0464455B2 (enExample) 1992-10-15

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