JPS61131482A - 不揮発性半導体記憶装置の製造方法 - Google Patents

不揮発性半導体記憶装置の製造方法

Info

Publication number
JPS61131482A
JPS61131482A JP59251599A JP25159984A JPS61131482A JP S61131482 A JPS61131482 A JP S61131482A JP 59251599 A JP59251599 A JP 59251599A JP 25159984 A JP25159984 A JP 25159984A JP S61131482 A JPS61131482 A JP S61131482A
Authority
JP
Japan
Prior art keywords
polycrystalline silicon
oxide film
silicon layer
control gate
semiconductor memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59251599A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6311786B2 (enrdf_load_stackoverflow
Inventor
Hirohisa Endo
遠藤　博久
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP59251599A priority Critical patent/JPS61131482A/ja
Publication of JPS61131482A publication Critical patent/JPS61131482A/ja
Publication of JPS6311786B2 publication Critical patent/JPS6311786B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Non-Volatile Memory (AREA)
JP59251599A 1984-11-30 1984-11-30 不揮発性半導体記憶装置の製造方法 Granted JPS61131482A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59251599A JPS61131482A (ja) 1984-11-30 1984-11-30 不揮発性半導体記憶装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59251599A JPS61131482A (ja) 1984-11-30 1984-11-30 不揮発性半導体記憶装置の製造方法

Publications (2)

Publication Number Publication Date
JPS61131482A true JPS61131482A (ja) 1986-06-19
JPS6311786B2 JPS6311786B2 (enrdf_load_stackoverflow) 1988-03-16

Family

ID=17225212

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59251599A Granted JPS61131482A (ja) 1984-11-30 1984-11-30 不揮発性半導体記憶装置の製造方法

Country Status (1)

Country Link
JP (1) JPS61131482A (enrdf_load_stackoverflow)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4830974A (en) * 1988-01-11 1989-05-16 Atmel Corporation EPROM fabrication process
US4833096A (en) * 1988-01-19 1989-05-23 Atmel Corporation EEPROM fabrication process

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4830974A (en) * 1988-01-11 1989-05-16 Atmel Corporation EPROM fabrication process
US4833096A (en) * 1988-01-19 1989-05-23 Atmel Corporation EEPROM fabrication process

Also Published As

Publication number Publication date
JPS6311786B2 (enrdf_load_stackoverflow) 1988-03-16

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