JPS61127165A - 半導体装置 - Google Patents

半導体装置

Info

Publication number
JPS61127165A
JPS61127165A JP59248352A JP24835284A JPS61127165A JP S61127165 A JPS61127165 A JP S61127165A JP 59248352 A JP59248352 A JP 59248352A JP 24835284 A JP24835284 A JP 24835284A JP S61127165 A JPS61127165 A JP S61127165A
Authority
JP
Japan
Prior art keywords
layer
light
semiconductor device
metal
photocurrent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59248352A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0527990B2 (enrdf_load_stackoverflow
Inventor
Hisao Nagao
長尾　久夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to JP59248352A priority Critical patent/JPS61127165A/ja
Publication of JPS61127165A publication Critical patent/JPS61127165A/ja
Publication of JPH0527990B2 publication Critical patent/JPH0527990B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/331—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H10F77/334—Coatings for devices having potential barriers for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers or cold shields for infrared detectors

Landscapes

  • Light Receiving Elements (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP59248352A 1984-11-24 1984-11-24 半導体装置 Granted JPS61127165A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59248352A JPS61127165A (ja) 1984-11-24 1984-11-24 半導体装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59248352A JPS61127165A (ja) 1984-11-24 1984-11-24 半導体装置

Publications (2)

Publication Number Publication Date
JPS61127165A true JPS61127165A (ja) 1986-06-14
JPH0527990B2 JPH0527990B2 (enrdf_load_stackoverflow) 1993-04-22

Family

ID=17176816

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59248352A Granted JPS61127165A (ja) 1984-11-24 1984-11-24 半導体装置

Country Status (1)

Country Link
JP (1) JPS61127165A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63164270A (ja) * 1986-12-26 1988-07-07 Toshiba Corp 積層型固体撮像装置
CN109346496A (zh) * 2018-11-23 2019-02-15 德淮半导体有限公司 像素单元、图像传感器及其制造方法
JP2021097056A (ja) * 2019-12-13 2021-06-24 コーデンシ株式会社 半導体集積回路装置及び光センサ

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51123083A (en) * 1975-04-03 1976-10-27 Ibm Integrated semiconductor device
JPS5645086A (en) * 1979-09-21 1981-04-24 Hitachi Ltd Photosensor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51123083A (en) * 1975-04-03 1976-10-27 Ibm Integrated semiconductor device
JPS5645086A (en) * 1979-09-21 1981-04-24 Hitachi Ltd Photosensor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63164270A (ja) * 1986-12-26 1988-07-07 Toshiba Corp 積層型固体撮像装置
CN109346496A (zh) * 2018-11-23 2019-02-15 德淮半导体有限公司 像素单元、图像传感器及其制造方法
JP2021097056A (ja) * 2019-12-13 2021-06-24 コーデンシ株式会社 半導体集積回路装置及び光センサ
JP2021097208A (ja) * 2019-12-13 2021-06-24 コーデンシ株式会社 半導体集積回路装置及び光センサ

Also Published As

Publication number Publication date
JPH0527990B2 (enrdf_load_stackoverflow) 1993-04-22

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term