JPS61123187A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS61123187A
JPS61123187A JP59236054A JP23605484A JPS61123187A JP S61123187 A JPS61123187 A JP S61123187A JP 59236054 A JP59236054 A JP 59236054A JP 23605484 A JP23605484 A JP 23605484A JP S61123187 A JPS61123187 A JP S61123187A
Authority
JP
Japan
Prior art keywords
threshold voltage
film
field effect
channel layer
value
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59236054A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0260060B2 (enrdf_load_stackoverflow
Inventor
Shoichi Suzuki
正一 鈴木
Toyokazu Onishi
豊和 大西
Tsukasa Onodera
司 小野寺
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP59236054A priority Critical patent/JPS61123187A/ja
Publication of JPS61123187A publication Critical patent/JPS61123187A/ja
Publication of JPH0260060B2 publication Critical patent/JPH0260060B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes

Landscapes

  • Junction Field-Effect Transistors (AREA)
JP59236054A 1984-11-09 1984-11-09 半導体装置の製造方法 Granted JPS61123187A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59236054A JPS61123187A (ja) 1984-11-09 1984-11-09 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59236054A JPS61123187A (ja) 1984-11-09 1984-11-09 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS61123187A true JPS61123187A (ja) 1986-06-11
JPH0260060B2 JPH0260060B2 (enrdf_load_stackoverflow) 1990-12-14

Family

ID=16995055

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59236054A Granted JPS61123187A (ja) 1984-11-09 1984-11-09 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS61123187A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS635571A (ja) * 1986-06-25 1988-01-11 Nec Corp 化合物半導体装置
JPS63240074A (ja) * 1987-03-27 1988-10-05 Nec Corp 半導体装置
GB2274944A (en) * 1993-01-29 1994-08-10 Mitsubishi Electric Corp Field effect transistor and method for producing the field effect transistor

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS635571A (ja) * 1986-06-25 1988-01-11 Nec Corp 化合物半導体装置
JPS63240074A (ja) * 1987-03-27 1988-10-05 Nec Corp 半導体装置
GB2274944A (en) * 1993-01-29 1994-08-10 Mitsubishi Electric Corp Field effect transistor and method for producing the field effect transistor
GB2274944B (en) * 1993-01-29 1997-04-23 Mitsubishi Electric Corp Field effect transistor and method for producing the field effect transistor

Also Published As

Publication number Publication date
JPH0260060B2 (enrdf_load_stackoverflow) 1990-12-14

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Legal Events

Date Code Title Description
EXPY Cancellation because of completion of term