JPS61121761U - - Google Patents
Info
- Publication number
- JPS61121761U JPS61121761U JP505485U JP505485U JPS61121761U JP S61121761 U JPS61121761 U JP S61121761U JP 505485 U JP505485 U JP 505485U JP 505485 U JP505485 U JP 505485U JP S61121761 U JPS61121761 U JP S61121761U
- Authority
- JP
- Japan
- Prior art keywords
- hole
- pressure sensor
- diffused resistor
- silicon diaphragm
- diffused
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Description
第１図は本考案の実施例たる耐雰囲気性歩留り
及び感度の均一性を向上させた半導体圧力センサ
の断面構成図である。第２図はシリコンダイアフ
ラム型圧力センサの基本断面構成図、第３図、第
４図は従来技術による耐雰囲気性を向上させた半
導体圧力センサの断面構成図である。
１……シリコン単結晶基板（ｎ−型）、２……
ダイアフラム部、３……ｐ−型拡散抵抗、４……
絶縁膜（ｅｘＳｉＯ２）、５……Ａｌ配線層、６
……拡散リード部（ｐ＋型）、７……シリコンエ
ピタキシヤル成長層（ｎ−型）、８……接続用孔
（なめらかな斜面を有する）、９……エツチング
停止層、１０……拡散領域（ｐ＋型）。
FIG. 1 is a cross-sectional configuration diagram of a semiconductor pressure sensor which is an embodiment of the present invention and has improved atmospheric resistance yield and uniformity of sensitivity. FIG. 2 is a basic cross-sectional configuration diagram of a silicon diaphragm type pressure sensor, and FIGS. 3 and 4 are cross-sectional configuration diagrams of a conventional semiconductor pressure sensor with improved atmospheric resistance. 1...Silicon single crystal substrate (n - type), 2...
Diaphragm section, 3...p - type diffused resistor, 4...
Insulating film (exSiO 2 ), 5...Al wiring layer, 6
... Diffusion lead part (p + type), 7 ... Silicon epitaxial growth layer (n - type), 8 ... Connection hole (having a smooth slope), 9 ... Etching stop layer, 10 ... Diffusion region (p + type).
Claims (1)
を形成し、この拡散抵抗とは反対の導電形を有す
るシリコンエピタキシヤル成長層により該シリコ
ンダイアフラム上を覆い上記シリコンエピタキシ
ヤル成長層になめらかな斜面を有する孔を形成し
、この孔を介して該拡散抵抗またはそれと同一の
導電形の拡散リード部と接続するようにＡｌ配線
層を形成した半導体圧力センサにおいて、上記の
孔の壁面に絶縁膜を形成してなることを特徴とす
る半導体圧力センサ。 A diffused resistor serving as a pressure sensing portion is formed on a silicon diaphragm, and a hole having a smooth slope is formed in the silicon diaphragm by covering the silicon diaphragm with a silicon epitaxial growth layer having a conductivity type opposite to that of the diffused resistor. In a semiconductor pressure sensor in which an Al wiring layer is formed to connect to the diffused resistor or a diffused lead portion of the same conductivity type through the hole, an insulating film is formed on the wall of the hole. A semiconductor pressure sensor characterized by:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP505485U JPS61121761U (en) | 1985-01-17 | 1985-01-17 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP505485U JPS61121761U (en) | 1985-01-17 | 1985-01-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61121761U true JPS61121761U (en) | 1986-07-31 |
Family
ID=30481216
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP505485U Pending JPS61121761U (en) | 1985-01-17 | 1985-01-17 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61121761U (en) |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5534422A (en) * | 1978-08-31 | 1980-03-11 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Method of manufacturing mos type semiconductor device |
| JPS5662373A (en) * | 1979-10-26 | 1981-05-28 | Hitachi Ltd | Semiconductor directional pressure transformer |
-
1985
- 1985-01-17 JP JP505485U patent/JPS61121761U/ja active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5534422A (en) * | 1978-08-31 | 1980-03-11 | Chiyou Lsi Gijutsu Kenkyu Kumiai | Method of manufacturing mos type semiconductor device |
| JPS5662373A (en) * | 1979-10-26 | 1981-05-28 | Hitachi Ltd | Semiconductor directional pressure transformer |
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