JPS61118074U - - Google Patents
Info
- Publication number
- JPS61118074U JPS61118074U JP20370985U JP20370985U JPS61118074U JP S61118074 U JPS61118074 U JP S61118074U JP 20370985 U JP20370985 U JP 20370985U JP 20370985 U JP20370985 U JP 20370985U JP S61118074 U JPS61118074 U JP S61118074U
- Authority
- JP
- Japan
- Prior art keywords
- transistor
- reference voltage
- voltage source
- threshold value
- high threshold
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000001514 detection method Methods 0.000 claims description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000012535 impurity Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Landscapes
- Measurement Of Current Or Voltage (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20370985U JPS6216682Y2 (enExample) | 1985-12-27 | 1985-12-27 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20370985U JPS6216682Y2 (enExample) | 1985-12-27 | 1985-12-27 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61118074U true JPS61118074U (enExample) | 1986-07-25 |
| JPS6216682Y2 JPS6216682Y2 (enExample) | 1987-04-27 |
Family
ID=30766113
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20370985U Expired JPS6216682Y2 (enExample) | 1985-12-27 | 1985-12-27 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6216682Y2 (enExample) |
-
1985
- 1985-12-27 JP JP20370985U patent/JPS6216682Y2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6216682Y2 (enExample) | 1987-04-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR870004496A (ko) | 반도체 기억 장치 | |
| JPH01321721A (ja) | 半導体時間遅延素子 | |
| SE8204247D0 (sv) | Reference voltage generator | |
| JPS54132753A (en) | Referential voltage generator and its application | |
| JPS61118074U (enExample) | ||
| JPS584459B2 (ja) | フリツプフロツプ回路装置 | |
| JPS57118664A (en) | Semiconductor device | |
| KR890003031A (ko) | 반도체장치 | |
| JPS6159360U (enExample) | ||
| EP0237029A3 (en) | A heterojunction field effect device operable at a high output current with a high withstand voltage | |
| DE69333446D1 (de) | Bipolarer Transistor und Herstellungsverfahren | |
| JPH02129960A (ja) | 半導体メモリ | |
| JPH01169049U (enExample) | ||
| JPS57206062A (en) | Semiconductor integrated circuit | |
| EP0097338A3 (en) | Reference voltage generating device | |
| JPS6246984B2 (enExample) | ||
| JPH02230305A (ja) | 基準電圧装置 | |
| JPS6331111B2 (enExample) | ||
| JPS6425558A (en) | Semiconductor memory device and manufacture thereof | |
| JPH0243203B2 (enExample) | ||
| JPS6217154U (enExample) | ||
| JPS5348135A (en) | Semiconductor type igniting device | |
| JPS63127152U (enExample) | ||
| JPS60150114A (ja) | 半導体集積回路装置 | |
| FR2251100A1 (en) | Saturable resistance semiconducting device - is included in circuit having temperature compensation |