JPS61116822A - プラズマ処理装置 - Google Patents

プラズマ処理装置

Info

Publication number
JPS61116822A
JPS61116822A JP14237484A JP14237484A JPS61116822A JP S61116822 A JPS61116822 A JP S61116822A JP 14237484 A JP14237484 A JP 14237484A JP 14237484 A JP14237484 A JP 14237484A JP S61116822 A JPS61116822 A JP S61116822A
Authority
JP
Japan
Prior art keywords
reaction vessel
plasma processing
electrodes
plate electrodes
quartz
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14237484A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0544819B2 (enExample
Inventor
Yuichi Nezu
根津　裕一
Masashi Yamamoto
山本　正志
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Microcomputer System Ltd
Hitachi Ltd
Original Assignee
Hitachi Ltd
Hitachi Microcomputer Engineering Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Microcomputer Engineering Ltd filed Critical Hitachi Ltd
Priority to JP14237484A priority Critical patent/JPS61116822A/ja
Publication of JPS61116822A publication Critical patent/JPS61116822A/ja
Publication of JPH0544819B2 publication Critical patent/JPH0544819B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
JP14237484A 1984-07-11 1984-07-11 プラズマ処理装置 Granted JPS61116822A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14237484A JPS61116822A (ja) 1984-07-11 1984-07-11 プラズマ処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14237484A JPS61116822A (ja) 1984-07-11 1984-07-11 プラズマ処理装置

Publications (2)

Publication Number Publication Date
JPS61116822A true JPS61116822A (ja) 1986-06-04
JPH0544819B2 JPH0544819B2 (enExample) 1993-07-07

Family

ID=15313889

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14237484A Granted JPS61116822A (ja) 1984-07-11 1984-07-11 プラズマ処理装置

Country Status (1)

Country Link
JP (1) JPS61116822A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007317650A (ja) * 2006-04-27 2007-12-06 Matsushita Electric Ind Co Ltd 高速原子線源および高速原子線放出方法ならびに表面改質装置
WO2014046002A1 (ja) * 2012-09-18 2014-03-27 リンテック株式会社 イオン注入装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5866325A (ja) * 1981-10-15 1983-04-20 Toshiba Ceramics Co Ltd エピタキシヤル成長用サセプタ−

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5866325A (ja) * 1981-10-15 1983-04-20 Toshiba Ceramics Co Ltd エピタキシヤル成長用サセプタ−

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007317650A (ja) * 2006-04-27 2007-12-06 Matsushita Electric Ind Co Ltd 高速原子線源および高速原子線放出方法ならびに表面改質装置
WO2014046002A1 (ja) * 2012-09-18 2014-03-27 リンテック株式会社 イオン注入装置
JP2014058723A (ja) * 2012-09-18 2014-04-03 Lintec Corp イオン注入装置
US9330880B2 (en) 2012-09-18 2016-05-03 Lintec Corporation Ion implantation device

Also Published As

Publication number Publication date
JPH0544819B2 (enExample) 1993-07-07

Similar Documents

Publication Publication Date Title
EP0073643A1 (en) Sputtering apparatus
EP0414859B1 (en) Improved etch chamber with gas dispersing membrane
JPS60198822A (ja) ドライエツチング装置
KR960034479A (ko) 산화물박막의 제조방법 및 그것에 사용되는 화학증착장치
JPS61116822A (ja) プラズマ処理装置
JPH01305524A (ja) プラズマｃｖｄ装置
JPH062948B2 (ja) 被処理体の処理方法
JPS59145519A (ja) プラズマｃｖｄ装置
JP3259452B2 (ja) プラズマｃｖｄ装置に用いる電極及びプラズマｃｖｄ装置
JPH0519352U (ja) マイクロ波プラズマｃｖｄ装置
JPS6210308B2 (enExample)
JPH0642331Y2 (ja) ドライエッチング装置
JP2751015B2 (ja) 被処理体の処理方法
JPH03138370A (ja) 薄膜製造装置
JP2594448B2 (ja) 被処理体のエッチング方法
JPH0745539A (ja) プラズマｃｖｄ装置に用いる電極及びプラズマｃｖｄ装置
SU957746A1 (ru) Устройство дл проведени плазмохимических процессов
JPH04329626A (ja) 半導体素子の製造装置
JPS62221116A (ja) プラズマ処理装置
JPH01133319A (ja) 薄膜処理装置
JPS6223106A (ja) 処理装置
JPS62183530A (ja) ドライエツチング装置
JPS60105221A (ja) 気相ウエハ処理装置
JPH03109294A (ja) ダイヤモンドコーティング装置
JPS61283114A (ja) プラズマｃｖｄ装置