JPS61116822A - プラズマ処理装置 - Google Patents

プラズマ処理装置

Info

Publication number
JPS61116822A
JPS61116822A JP59142374A JP14237484A JPS61116822A JP S61116822 A JPS61116822 A JP S61116822A JP 59142374 A JP59142374 A JP 59142374A JP 14237484 A JP14237484 A JP 14237484A JP S61116822 A JPS61116822 A JP S61116822A
Authority
JP
Japan
Prior art keywords
electrodes
electrode
impedance
wafer
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59142374A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0544819B2 (cg-RX-API-DMAC10.html
Inventor
Yuichi Nezu
根津　裕一
Masashi Yamamoto
山本　正志
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Microcomputer System Ltd
Hitachi Ltd
Original Assignee
Hitachi Ltd
Hitachi Microcomputer Engineering Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Microcomputer Engineering Ltd filed Critical Hitachi Ltd
Priority to JP59142374A priority Critical patent/JPS61116822A/ja
Publication of JPS61116822A publication Critical patent/JPS61116822A/ja
Publication of JPH0544819B2 publication Critical patent/JPH0544819B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/24—
    • H10P14/3411—

Landscapes

  • Drying Of Semiconductors (AREA)
JP59142374A 1984-07-11 1984-07-11 プラズマ処理装置 Granted JPS61116822A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59142374A JPS61116822A (ja) 1984-07-11 1984-07-11 プラズマ処理装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59142374A JPS61116822A (ja) 1984-07-11 1984-07-11 プラズマ処理装置

Publications (2)

Publication Number Publication Date
JPS61116822A true JPS61116822A (ja) 1986-06-04
JPH0544819B2 JPH0544819B2 (cg-RX-API-DMAC10.html) 1993-07-07

Family

ID=15313889

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59142374A Granted JPS61116822A (ja) 1984-07-11 1984-07-11 プラズマ処理装置

Country Status (1)

Country Link
JP (1) JPS61116822A (cg-RX-API-DMAC10.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007317650A (ja) * 2006-04-27 2007-12-06 Matsushita Electric Ind Co Ltd 高速原子線源および高速原子線放出方法ならびに表面改質装置
WO2014046002A1 (ja) * 2012-09-18 2014-03-27 リンテック株式会社 イオン注入装置

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5866325A (ja) * 1981-10-15 1983-04-20 Toshiba Ceramics Co Ltd エピタキシヤル成長用サセプタ−

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5866325A (ja) * 1981-10-15 1983-04-20 Toshiba Ceramics Co Ltd エピタキシヤル成長用サセプタ−

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007317650A (ja) * 2006-04-27 2007-12-06 Matsushita Electric Ind Co Ltd 高速原子線源および高速原子線放出方法ならびに表面改質装置
WO2014046002A1 (ja) * 2012-09-18 2014-03-27 リンテック株式会社 イオン注入装置
JP2014058723A (ja) * 2012-09-18 2014-04-03 Lintec Corp イオン注入装置
US9330880B2 (en) 2012-09-18 2016-05-03 Lintec Corporation Ion implantation device

Also Published As

Publication number Publication date
JPH0544819B2 (cg-RX-API-DMAC10.html) 1993-07-07

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