JPS61116360A - レ−ザ光線リトグラフ - Google Patents

レ−ザ光線リトグラフ

Info

Publication number
JPS61116360A
JPS61116360A JP60164211A JP16421185A JPS61116360A JP S61116360 A JPS61116360 A JP S61116360A JP 60164211 A JP60164211 A JP 60164211A JP 16421185 A JP16421185 A JP 16421185A JP S61116360 A JPS61116360 A JP S61116360A
Authority
JP
Japan
Prior art keywords
layer
exposure
wafer
laser beam
laser
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP60164211A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0513368B2 (cg-RX-API-DMAC7.html
Inventor
ヨーゼフ・ビレ
ジークフリード・フンクリンガー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of JPS61116360A publication Critical patent/JPS61116360A/ja
Publication of JPH0513368B2 publication Critical patent/JPH0513368B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • G03F7/704—Scanned exposure beam, e.g. raster-, rotary- and vector scanning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70375—Multiphoton lithography or multiphoton photopolymerization; Imaging systems comprising means for converting one type of radiation into another type of radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes
    • H01L21/0275—Photolithographic processes using lasers

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Optics & Photonics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Automatic Focus Adjustment (AREA)
  • Lasers (AREA)
  • Mechanical Optical Scanning Systems (AREA)
  • Mechanical Light Control Or Optical Switches (AREA)
  • Semiconductor Lasers (AREA)
  • Materials For Photolithography (AREA)
  • Laser Surgery Devices (AREA)
JP60164211A 1984-07-26 1985-07-26 レ−ザ光線リトグラフ Granted JPS61116360A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE3427611A DE3427611A1 (de) 1984-07-26 1984-07-26 Laserstrahl-lithograph
DE3427611.4 1984-07-26

Publications (2)

Publication Number Publication Date
JPS61116360A true JPS61116360A (ja) 1986-06-03
JPH0513368B2 JPH0513368B2 (cg-RX-API-DMAC7.html) 1993-02-22

Family

ID=6241658

Family Applications (1)

Application Number Title Priority Date Filing Date
JP60164211A Granted JPS61116360A (ja) 1984-07-26 1985-07-26 レ−ザ光線リトグラフ

Country Status (5)

Country Link
US (1) US4727381A (cg-RX-API-DMAC7.html)
EP (1) EP0173849B1 (cg-RX-API-DMAC7.html)
JP (1) JPS61116360A (cg-RX-API-DMAC7.html)
AT (1) ATE64236T1 (cg-RX-API-DMAC7.html)
DE (2) DE3427611A1 (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013138100A (ja) * 2011-12-28 2013-07-11 Dainippon Screen Mfg Co Ltd 描画装置および描画方法

Families Citing this family (46)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62279627A (ja) * 1986-05-28 1987-12-04 Toshiba Mach Co Ltd ビ−ム描画装置の描画方法
CH670592A5 (cg-RX-API-DMAC7.html) * 1986-09-22 1989-06-30 Lasarray Holding Ag
NL8700612A (nl) * 1987-03-13 1988-10-03 Tno Confocale laserscanning microscoop.
FR2621762B1 (fr) * 1987-10-09 1994-06-17 Thomson Csf Procede et dispositif pour l'inscription d'image par laser, et dispositif obtenu par ce procede
US4901718A (en) * 1988-02-02 1990-02-20 Intelligent Surgical Lasers 3-Dimensional laser beam guidance system
US5592211A (en) * 1988-03-25 1997-01-07 Texas Instruments Incorporated Laser pattern/inspector with a linearly ramped chirp deflector
US4912487A (en) * 1988-03-25 1990-03-27 Texas Instruments Incorporated Laser scanner using focusing acousto-optic device
US4947039A (en) * 1988-10-17 1990-08-07 Eotron Corporation Flat stationary field light beam scanning device
US5327338A (en) * 1990-01-31 1994-07-05 Etec Systems, Inc. Scanning laser lithography system alignment apparatus
US5124927A (en) * 1990-03-02 1992-06-23 International Business Machines Corp. Latent-image control of lithography tools
ES2074866T3 (es) * 1990-11-21 1995-09-16 Polaroid Corp Cabeza de impresion optica sobre un medio de impresion discontinuo fijado a un tambor impresor.
US5274397A (en) * 1991-05-14 1993-12-28 Firstech Properties Company Large-format plotter using segmented raster-scanning
US5619488A (en) * 1991-09-07 1997-04-08 Fuji Xerox Co., Ltd. Information recording device
US5331338A (en) * 1992-01-30 1994-07-19 Printware, Inc. Web steering for an image recorder
US5246435A (en) * 1992-02-25 1993-09-21 Intelligent Surgical Lasers Method for removing cataractous material
DE69226511T2 (de) * 1992-03-05 1999-01-28 Micronic Laser Systems Ab, Taeby Verfahren und Vorrichtung zur Belichtung von Substraten
US5656186A (en) * 1994-04-08 1997-08-12 The Regents Of The University Of Michigan Method for controlling configuration of laser induced breakdown and ablation
US5633672A (en) * 1994-09-13 1997-05-27 Eastman Kodak Company Real-time calibration of processless writer
DE19511119A1 (de) * 1995-03-20 1995-10-05 Frenck H J Dr Verfahren und Vorrichtung zur Präparation von Strukturen in dünnen Schichten durch Direktbeleuchtung einer fotoempfindlichen Schicht
JP3591922B2 (ja) * 1995-07-17 2004-11-24 キヤノン株式会社 光量測定装置
US6246706B1 (en) 1999-05-27 2001-06-12 Spectra Physics Lasers, Inc. Laser writing method and apparatus
DE19957418B4 (de) * 1999-11-29 2016-02-04 Leica Microsystems Cms Gmbh Verfahren zur lichtoptischen Abtastung eines Objekts und Rastermikroskop zur Anwendung des Verfahrens
US6324191B1 (en) 2000-01-12 2001-11-27 Intralase Corp. Oscillator with mode control
US6341009B1 (en) 2000-02-24 2002-01-22 Quantronix Corporation Laser delivery system and method for photolithographic mask repair
US8497450B2 (en) * 2001-02-16 2013-07-30 Electro Scientific Industries, Inc. On-the fly laser beam path dithering for enhancing throughput
US20020170887A1 (en) * 2001-03-01 2002-11-21 Konica Corporation Optical element producing method, base material drawing method and base material drawing apparatus
US7843632B2 (en) * 2006-08-16 2010-11-30 Cymer, Inc. EUV optics
US6610050B2 (en) 2001-07-27 2003-08-26 20/10 Perfect Vision, Optische Geraete Gmbh Laser beam delivery system with multiple focal points
KR20050044371A (ko) 2001-11-07 2005-05-12 어플라이드 머티어리얼스, 인코포레이티드 광학 스폿 그리드 어레이 프린터
WO2003040829A2 (en) 2001-11-07 2003-05-15 Applied Materials, Inc. Maskless printer using photoelectric conversion of a light beam array
DE10358415B4 (de) * 2003-12-13 2007-02-15 Lambertus Monnee Computergesteuertes Verfahren zur Darstellung der Bewegungsbahn eines Werkzeuges zur Ausbeulung einer Delle in einem Karosserieblech durch einen laufenden Lichtpunkt
US7618415B2 (en) * 2004-04-09 2009-11-17 Technolas Perfect Vision Gmbh Beam steering system for corneal laser surgery
US8110775B2 (en) * 2004-06-18 2012-02-07 Electro Scientific Industries, Inc. Systems and methods for distinguishing reflections of multiple laser beams for calibration for semiconductor structure processing
US8383982B2 (en) * 2004-06-18 2013-02-26 Electro Scientific Industries, Inc. Methods and systems for semiconductor structure processing using multiple laser beam spots
US8148211B2 (en) * 2004-06-18 2012-04-03 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laser beam spots spaced on-axis delivered simultaneously
US7687740B2 (en) * 2004-06-18 2010-03-30 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laterally spaced laser beam spots delivering multiple blows
US7629234B2 (en) * 2004-06-18 2009-12-08 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laterally spaced laser beam spots with joint velocity profiling
US7935941B2 (en) * 2004-06-18 2011-05-03 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laser beam spots spaced on-axis on non-adjacent structures
US7435927B2 (en) 2004-06-18 2008-10-14 Electron Scientific Industries, Inc. Semiconductor link processing using multiple laterally spaced laser beam spots with on-axis offset
US7633034B2 (en) * 2004-06-18 2009-12-15 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laser beam spots overlapping lengthwise on a structure
US7923306B2 (en) * 2004-06-18 2011-04-12 Electro Scientific Industries, Inc. Semiconductor structure processing using multiple laser beam spots
US7371596B2 (en) * 2004-12-30 2008-05-13 Semicube, Inc. Parallel-beam scanning for surface patterning of materials
US20070173796A1 (en) * 2006-01-25 2007-07-26 Ralf Kessler Device and method for calibrating a laser system
US7643521B2 (en) * 2006-07-27 2010-01-05 Technolas Perfect Vision Gmbh Material processing system with variable repetition rate laser
DE102012000650A1 (de) * 2012-01-16 2013-07-18 Carl Zeiss Microscopy Gmbh Verfahren und vorrichtung zum abrastern einer oberfläche eines objekts mit einem teilchenstrahl
CN113031390B (zh) * 2021-03-15 2024-09-27 广东省大湾区集成电路与系统应用研究院 激光直写及其仿真的方法、装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2012394A1 (de) * 1970-03-16 1971-10-14 Siemens Ag Anordnung zur direkten und abschnittsweisen Belichtung von lichtempfindlichen Schichten
US4001840A (en) * 1974-10-07 1977-01-04 Precision Instrument Co. Non-photographic, digital laser image recording
JPS54128303A (en) * 1978-03-29 1979-10-04 Victor Co Of Japan Ltd Optical reproducing device of information recording medium disc
JPS5567722A (en) * 1978-11-16 1980-05-22 Fuji Photo Film Co Ltd Light beam recorder
JPS57102016A (en) * 1980-12-17 1982-06-24 Hitachi Ltd Pattern generator
US4541712A (en) * 1981-12-21 1985-09-17 Tre Semiconductor Equipment Corporation Laser pattern generating system

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013138100A (ja) * 2011-12-28 2013-07-11 Dainippon Screen Mfg Co Ltd 描画装置および描画方法

Also Published As

Publication number Publication date
DE3583087D1 (en) 1991-07-11
EP0173849A3 (en) 1988-06-08
DE3427611A1 (de) 1988-06-09
EP0173849B1 (de) 1991-06-05
JPH0513368B2 (cg-RX-API-DMAC7.html) 1993-02-22
EP0173849A2 (de) 1986-03-12
ATE64236T1 (de) 1991-06-15
US4727381A (en) 1988-02-23

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