JPS61114575A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS61114575A JPS61114575A JP59236208A JP23620884A JPS61114575A JP S61114575 A JPS61114575 A JP S61114575A JP 59236208 A JP59236208 A JP 59236208A JP 23620884 A JP23620884 A JP 23620884A JP S61114575 A JPS61114575 A JP S61114575A
- Authority
- JP
- Japan
- Prior art keywords
- region
- film
- polycrystalline silicon
- silicon
- conductivity type
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 25
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 46
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 25
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 25
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 24
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 24
- 238000005530 etching Methods 0.000 claims description 21
- 239000010410 layer Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 14
- 230000003647 oxidation Effects 0.000 claims description 14
- 238000007254 oxidation reaction Methods 0.000 claims description 14
- 238000002844 melting Methods 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 239000002344 surface layer Substances 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 2
- 239000000428 dust Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000000926 separation method Methods 0.000 description 6
- 238000000605 extraction Methods 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000001580 bacterial effect Effects 0.000 description 1
- -1 boron ions Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000005360 phosphosilicate glass Substances 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/30—Devices controlled by electric currents or voltages
- H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H10D48/34—Bipolar devices
- H10D48/345—Bipolar transistors having ohmic electrodes on emitter-like, base-like, and collector-like regions
Landscapes
- Bipolar Transistors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59236208A JPS61114575A (ja) | 1984-11-09 | 1984-11-09 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59236208A JPS61114575A (ja) | 1984-11-09 | 1984-11-09 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61114575A true JPS61114575A (ja) | 1986-06-02 |
| JPH0466100B2 JPH0466100B2 (enrdf_load_stackoverflow) | 1992-10-22 |
Family
ID=16997376
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59236208A Granted JPS61114575A (ja) | 1984-11-09 | 1984-11-09 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61114575A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63119571A (ja) * | 1986-11-07 | 1988-05-24 | Mitsubishi Electric Corp | 半導体集積回路装置およびその製造方法 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54155778A (en) * | 1978-05-30 | 1979-12-08 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and its manufacture |
| JPS5694770A (en) * | 1979-12-28 | 1981-07-31 | Nec Corp | Transistor |
-
1984
- 1984-11-09 JP JP59236208A patent/JPS61114575A/ja active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS54155778A (en) * | 1978-05-30 | 1979-12-08 | Nippon Telegr & Teleph Corp <Ntt> | Semiconductor device and its manufacture |
| JPS5694770A (en) * | 1979-12-28 | 1981-07-31 | Nec Corp | Transistor |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63119571A (ja) * | 1986-11-07 | 1988-05-24 | Mitsubishi Electric Corp | 半導体集積回路装置およびその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0466100B2 (enrdf_load_stackoverflow) | 1992-10-22 |
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