JPS6098431A - パタン形成材料及びパタン形成方法 - Google Patents

パタン形成材料及びパタン形成方法

Info

Publication number
JPS6098431A
JPS6098431A JP58205767A JP20576783A JPS6098431A JP S6098431 A JPS6098431 A JP S6098431A JP 58205767 A JP58205767 A JP 58205767A JP 20576783 A JP20576783 A JP 20576783A JP S6098431 A JPS6098431 A JP S6098431A
Authority
JP
Japan
Prior art keywords
group
electron beam
film
positive integer
resist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58205767A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0314333B2 (cg-RX-API-DMAC7.html
Inventor
Saburo Imamura
三郎 今村
Osamu Kogure
小暮　攻
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP58205767A priority Critical patent/JPS6098431A/ja
Publication of JPS6098431A publication Critical patent/JPS6098431A/ja
Publication of JPH0314333B2 publication Critical patent/JPH0314333B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0754—Non-macromolecular compounds containing silicon-to-silicon bonds

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Silicon Polymers (AREA)
JP58205767A 1983-11-04 1983-11-04 パタン形成材料及びパタン形成方法 Granted JPS6098431A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58205767A JPS6098431A (ja) 1983-11-04 1983-11-04 パタン形成材料及びパタン形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58205767A JPS6098431A (ja) 1983-11-04 1983-11-04 パタン形成材料及びパタン形成方法

Publications (2)

Publication Number Publication Date
JPS6098431A true JPS6098431A (ja) 1985-06-01
JPH0314333B2 JPH0314333B2 (cg-RX-API-DMAC7.html) 1991-02-26

Family

ID=16512328

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58205767A Granted JPS6098431A (ja) 1983-11-04 1983-11-04 パタン形成材料及びパタン形成方法

Country Status (1)

Country Link
JP (1) JPS6098431A (cg-RX-API-DMAC7.html)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3817306A1 (de) * 1987-05-21 1988-12-01 Toshiba Kawasaki Kk Polysilanverbindung und diese enthaltende lichtempfindliche beschichtungsmasse
JPH0196222A (ja) * 1987-10-08 1989-04-14 Uki Gosei Kogyo Co Ltd １，２，２−トリメチル−１−（置換フェニル）ポリジシランおよびその製造法
US5159042A (en) * 1988-12-29 1992-10-27 Canon Kabushiki Kaisha Polysilane compounds and electrophotographic photosensitive members with the use of said compounds
US5220181A (en) * 1989-12-11 1993-06-15 Canon Kabushiki Kaisha Photovoltaic element of junction type with an organic semiconductor layer formed of a polysilane compound
JP2005036139A (ja) * 2003-07-17 2005-02-10 Osaka Gas Co Ltd コポリシランとその製造方法
JP2010204538A (ja) * 2009-03-05 2010-09-16 Fuji Xerox Co Ltd 表示用白色粒子、表示媒体、及び表示装置

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3817306A1 (de) * 1987-05-21 1988-12-01 Toshiba Kawasaki Kk Polysilanverbindung und diese enthaltende lichtempfindliche beschichtungsmasse
JPH0196222A (ja) * 1987-10-08 1989-04-14 Uki Gosei Kogyo Co Ltd １，２，２−トリメチル−１−（置換フェニル）ポリジシランおよびその製造法
US5159042A (en) * 1988-12-29 1992-10-27 Canon Kabushiki Kaisha Polysilane compounds and electrophotographic photosensitive members with the use of said compounds
US5220181A (en) * 1989-12-11 1993-06-15 Canon Kabushiki Kaisha Photovoltaic element of junction type with an organic semiconductor layer formed of a polysilane compound
JP2005036139A (ja) * 2003-07-17 2005-02-10 Osaka Gas Co Ltd コポリシランとその製造方法
JP2010204538A (ja) * 2009-03-05 2010-09-16 Fuji Xerox Co Ltd 表示用白色粒子、表示媒体、及び表示装置
US8404881B2 (en) 2009-03-05 2013-03-26 Fuji Xerox Co., Ltd. White particles for display, particle dispersion for display, display medium and display device
US8717282B2 (en) 2009-03-05 2014-05-06 Fuji Xerox Co., Ltd. White particles for display, particle dispersion for display, display medium and display device

Also Published As

Publication number Publication date
JPH0314333B2 (cg-RX-API-DMAC7.html) 1991-02-26

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