JPS6095965A - Manufacture of solid-state image pickup device - Google Patents
Manufacture of solid-state image pickup deviceInfo
- Publication number
- JPS6095965A JPS6095965A JP58204313A JP20431383A JPS6095965A JP S6095965 A JPS6095965 A JP S6095965A JP 58204313 A JP58204313 A JP 58204313A JP 20431383 A JP20431383 A JP 20431383A JP S6095965 A JPS6095965 A JP S6095965A
- Authority
- JP
- Japan
- Prior art keywords
- solid
- package
- state image
- image pickup
- optical window
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 230000003287 optical effect Effects 0.000 claims abstract description 21
- 238000003466 welding Methods 0.000 claims abstract description 13
- 238000001816 cooling Methods 0.000 claims abstract description 7
- 238000003384 imaging method Methods 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 9
- 239000000498 cooling water Substances 0.000 abstract description 2
- 238000007789 sealing Methods 0.000 description 5
- 239000002184 metal Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000002845 discoloration Methods 0.000 description 2
- 238000007664 blowing Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- KRTSDMXIXPKRQR-AATRIKPKSA-N monocrotophos Chemical compound CNC(=O)\C=C(/C)OP(=O)(OC)OC KRTSDMXIXPKRQR-AATRIKPKSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】 〔発明の技術分野〕 本発明は固体撮像装置の製造方法に関する。[Detailed description of the invention] [Technical field of invention] The present invention relates to a method for manufacturing a solid-state imaging device.
00 D ((!hange 0upled Devi
ce )やBBD(Backet Brigede D
evice)等の電荷転送素子を用いた固体撮像装置は
従来よりょ〈知らnてb固体撮像装置の一例を第1図に
示す。例えばセラミックから成る外囲器1には凹部が形
成されており、その凹部に固体撮像素子2が固着さ詐て
いる。固体撮像素子2のポンディングパッド部(図示せ
ず)はボンディングワイヤ3にて外囲器1のボスト部(
図示せず)と電気的に接続されて層る。00 D ((!hange 0upled Devi
ce ) and BBD (Backet Brigede D
An example of a solid-state imaging device using a charge transfer element such as a conventional solid-state imaging device is shown in FIG. For example, an envelope 1 made of ceramic has a recess formed therein, and a solid-state image sensor 2 is fixed to the recess. A bonding pad portion (not shown) of the solid-state image sensor 2 is connected to a boss portion (not shown) of the envelope 1 using a bonding wire 3.
(not shown).
この固体撮像素子2への光信号を透過するために外囲器
1上部には光学窓4が金属層5を介して設けられており
、固体撮像素子2を気密に封止して因る。一方近年、固
体撮f象装置のカラー化が進んでいる。そしてカラー固
体撮像装置においては固体撮像素子2上に直接色フィル
タ6を形成することが多い。In order to transmit the optical signal to the solid-state image sensor 2, an optical window 4 is provided in the upper part of the envelope 1 via a metal layer 5, and the solid-state image sensor 2 is hermetically sealed. On the other hand, in recent years, the use of color solid-state imaging devices has progressed. In color solid-state imaging devices, the color filter 6 is often formed directly on the solid-state imaging element 2.
外囲器1と光学窓4との固着方法としては、操作が容易
であること、信頼性が優nてhることから一般に電気溶
接法が採用されてbる。ところが電気溶接で光学窓4を
封止する場合、十分な封止能力を達成するように電気溶
接すると、固体撮像装置全体が高温になり、光学窓4の
ガラス板に歪を生じてクラックが入ることがあり、歩留
りが低かった。またカラー固体撮像装置においては固体
撮像素子2上の色フィルタ6が変色して特性が劣化した
りする問題があった。As a method of fixing the envelope 1 and the optical window 4, electric welding is generally adopted because it is easy to operate and has excellent reliability. However, when sealing the optical window 4 by electric welding, if the electric welding is performed to achieve sufficient sealing ability, the entire solid-state imaging device will become hot, causing distortion and cracks in the glass plate of the optical window 4. As a result, the yield was low. Further, in the color solid-state imaging device, there is a problem in that the color filter 6 on the solid-state imaging device 2 changes color and its characteristics deteriorate.
本発明は上記事情全考慮してなさnたもので、歩留りの
低下や特性劣化を招くことのない固体撮像装置の製造方
法を提供することを目的とする。The present invention has been made in consideration of all the above circumstances, and an object of the present invention is to provide a method for manufacturing a solid-state imaging device that does not cause a decrease in yield or deterioration of characteristics.
この目的を達成するために本発明による饗遣方法は、外
囲器に電気溶接にて光学窓を封止する際に溶接部を冷却
することを%徴とする。In order to achieve this object, the serving method according to the present invention includes cooling the welded portion when sealing the optical window to the envelope by electric welding.
以下本発明を図示の実施例に基づbて説明する。 The present invention will be explained below based on the illustrated embodiments.
第1図に示したものと同じ構成の固体撮像装置を製造す
る場合につbて説明する。第2図に示すように外囲器1
に形成さnた凹部に色フィルタ6つきの固体撮像素子2
が固着されている。固体撮像素子2のポンディングパッ
ド部(図示せず)はボンディングワイヤ8にて外囲器1
のポスト部(図示せず)と電気的に接続されている。こ
の固体撮像素子2への光信号を透過する光学窓4が電気
溶接軸10により金属層5を介して外囲器1に封止さn
る。このとき外囲器1が塔載されているステージ11内
部処設けられた穴12に冷却水を流してステージ11を
介して固体撮像装置全冷却する。A case of manufacturing a solid-state imaging device having the same configuration as that shown in FIG. 1 will be described. As shown in Figure 2, the envelope 1
A solid-state image sensor 2 with a color filter 6 in a recess formed in the
is fixed. A bonding pad portion (not shown) of the solid-state image sensor 2 is connected to the envelope 1 with a bonding wire 8.
The post section (not shown) is electrically connected to the post section (not shown). An optical window 4 that transmits optical signals to the solid-state image sensor 2 is sealed to the envelope 1 via a metal layer 5 by an electric welding shaft 10.
Ru. At this time, cooling water is allowed to flow through holes 12 provided inside the stage 11 on which the envelope 1 is mounted, thereby completely cooling the solid-state imaging device through the stage 11.
固体撮像装置を冷却する方法としては他に例えば第8図
に示すように、電気溶接軸10で溶接するときに、この
溶接部に冷風管13により冷風を吹きつけて冷却しても
よい。Another method for cooling the solid-state imaging device is, for example, as shown in FIG. 8, when welding is performed using an electric welding shaft 10, cooling may be performed by blowing cold air onto the welded portion through a cold air pipe 13.
このように固体撮像装置を冷却することにより、電気溶
接による封止時における温度上昇を防止し、光学窓4の
クラックや色フィルタ6の変色を防止することができる
。By cooling the solid-state imaging device in this manner, it is possible to prevent a temperature rise during sealing by electric welding, and to prevent cracks in the optical window 4 and discoloration of the color filter 6.
以上の通り本発明によ扛ば封止時における光学窓のクラ
ック等が防止でき歩留りを向上させることができる。ま
た色フィルタの変色が防止でき光学特性のよめ固体撮像
i置が製造できる。As described above, according to the present invention, cracks in the optical window during sealing can be prevented and the yield can be improved. Furthermore, discoloration of the color filters can be prevented and optical characteristics can be improved, so that solid-state imaging devices can be manufactured.
第1図は固体撮は装置の断面図、第2図は本発明の一実
施例による固体撮像装置の製造方法の説明図、第8図は
本発明の他の実施例による固体描像装置の製造方法の説
明図である。
1・・・外囲器、2・・・固体撮像素子、3・・・ボン
ティングワイヤ、4・・・光学窓、5・・・金属層、6
・・・色フィルタ、10・・・電気溶接軸、11・・・
ステージ、13・・・冷風管。
出願人代理人 猪 股 清
第1図
ムFIG. 1 is a cross-sectional view of a solid-state imaging device, FIG. 2 is an explanatory diagram of a method for manufacturing a solid-state imaging device according to an embodiment of the present invention, and FIG. 8 is a manufacturing method of a solid-state imaging device according to another embodiment of the present invention. It is an explanatory diagram of a method. DESCRIPTION OF SYMBOLS 1... Envelope, 2... Solid-state image sensor, 3... Bonding wire, 4... Optical window, 5... Metal layer, 6
...Color filter, 10...Electric welding shaft, 11...
Stage 13...cold air pipe. Applicant's agent Kiyoshi Inomata Figure 1
Claims (1)
撮像素子が固着される外囲器と、この外囲器に溶接され
前記固体撮像素子を気密封止する光学窓とを備えた固体
撮像装置の製造方法にお込て、前記外囲器と光学窓との
溶接部全冷却しつつ溶接を行うことを%徴とする固体撮
f象装置の製造方法。A solid-state image pickup device that converts an optical signal into an electrical signal, an envelope to which the solid-state image pickup device is fixed, and an optical window that is welded to the envelope and hermetically seals the solid-state image pickup device. A method for manufacturing a solid-state imaging device, the method comprising: performing welding while completely cooling the welded portion between the envelope and the optical window.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58204313A JPS6095965A (en) | 1983-10-31 | 1983-10-31 | Manufacture of solid-state image pickup device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58204313A JPS6095965A (en) | 1983-10-31 | 1983-10-31 | Manufacture of solid-state image pickup device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6095965A true JPS6095965A (en) | 1985-05-29 |
Family
ID=16488412
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58204313A Pending JPS6095965A (en) | 1983-10-31 | 1983-10-31 | Manufacture of solid-state image pickup device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6095965A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6435938A (en) * | 1987-07-30 | 1989-02-07 | Toshiba Corp | Method of hermetically sealing image sensing element module |
-
1983
- 1983-10-31 JP JP58204313A patent/JPS6095965A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6435938A (en) * | 1987-07-30 | 1989-02-07 | Toshiba Corp | Method of hermetically sealing image sensing element module |
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