JPS58218176A - Optical semiconductor device - Google Patents
Optical semiconductor deviceInfo
- Publication number
- JPS58218176A JPS58218176A JP57101603A JP10160382A JPS58218176A JP S58218176 A JPS58218176 A JP S58218176A JP 57101603 A JP57101603 A JP 57101603A JP 10160382 A JP10160382 A JP 10160382A JP S58218176 A JPS58218176 A JP S58218176A
- Authority
- JP
- Japan
- Prior art keywords
- light
- lead frame
- conversion element
- correction filter
- transmitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 24
- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- 229920005989 resin Polymers 0.000 claims abstract description 30
- 239000011347 resin Substances 0.000 claims abstract description 30
- 238000006243 chemical reaction Methods 0.000 claims abstract description 16
- 230000002093 peripheral effect Effects 0.000 claims description 7
- 239000011248 coating agent Substances 0.000 abstract description 2
- 238000000576 coating method Methods 0.000 abstract description 2
- 238000000034 method Methods 0.000 abstract description 2
- 238000003466 welding Methods 0.000 abstract description 2
- 238000000465 moulding Methods 0.000 abstract 4
- 239000000463 material Substances 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
- 230000000007 visual effect Effects 0.000 abstract 1
- 239000000853 adhesive Substances 0.000 description 13
- 230000001070 adhesive effect Effects 0.000 description 13
- 239000003795 chemical substances by application Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
Abstract
Description
【発明の詳細な説明】
〔発明の技術分野〕
この発明は、入射光を電気信号に変換した択あるいは入
力聾気信号を光に変換する光半導体装置に関する。DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to an optical semiconductor device that converts incident light into an electrical signal or an input deafening signal into light.
従来、たとえば入射光を電気信号に変換する光半導体装
置は第１図（ａ） 、 （ｂ）に示すような構成になっ
ている。すなわち、光電変換素子１とその周辺回路から
なる半導体素子２をリードフレーム３に固着し、さらに
このリードフレーム３にワイ゛ヤ？ンディングした後、
これらを光透過性のモールド樹脂４で被覆して一体化し
、しかる後このモールド樹脂４上を光不透過性モールド
樹脂５で被覆して外形を形成する。そして、この光不透
過性モールド樹脂５の光電変換素子Ｊと相対向する部位
に形成された入射光路に視感度補正フィルタ６を配設し
、このフィルタ６を透明樹脂接着剤７で固着する。その
佐、リードフレーム３の外部導出部を必要長さに切断す
ることによシ、光半導体装置を構成していた。Conventionally, an optical semiconductor device that converts incident light into an electrical signal has a configuration as shown in FIGS. 1(a) and 1(b). That is, a semiconductor element 2 consisting of a photoelectric conversion element 1 and its peripheral circuit is fixed to a lead frame 3, and a wire is further attached to this lead frame 3. After landing,
These are coated with a light-transmitting mold resin 4 to be integrated, and then the mold resin 4 is coated with a light-impermeable mold resin 5 to form an outer shape. A visibility correction filter 6 is disposed in an incident optical path formed in a portion of the light-opaque molded resin 5 facing the photoelectric conversion element J, and the filter 6 is fixed with a transparent resin adhesive 7. In the meantime, an optical semiconductor device was constructed by cutting the external lead-out portion of the lead frame 3 to a required length.
しかしながら、上述した従来の光半導体装置にあっては
、光透過性モール、ド樹脂４を形成した後、この光透逆
性モールド樹脂４上に光不透過性モールド樹脂５を形成
するので、成形時などにおける熱膨張および熱収縮にょ
シ境界部にわずかな隙間を生ずる。また、光電変換素子
ｌ゛上部入射光路に視感度補正フィルタ６を接着固庁す
る際、透明液状の接着剤７を使用するため、光透過性モ
ールド樹脂４と光不透過性モールド樹脂５との隙間に接
着剤が流れ込み、接着剤７の分量が減少する。さらに、
接着剤７の１２が一定していないため、−足動の分量に
するまでロスを生ずる。また、流れ込む接着剤がＩＪ−
ドフレーム３の外部導出部にも伝わり、この外部導出リ
ードを絶縁被覆してしまう。この被覆は透明であるため
判明困難で、導電不良をきたす問題があった。However, in the conventional optical semiconductor device described above, after the light-transmitting mold resin 4 is formed, the light-impermeable mold resin 5 is formed on the light-transmitting mold resin 4. Due to thermal expansion and contraction during heating, a slight gap is created at the boundary. In addition, since a transparent liquid adhesive 7 is used when attaching the visibility correction filter 6 to the upper incident optical path of the photoelectric conversion element 1, the light-transmitting mold resin 4 and the light-opaque mold resin 5 are bonded together. The adhesive flows into the gap, and the amount of adhesive 7 decreases. moreover,
Since the amount of adhesive 7 is not constant, a loss occurs until the amount of the adhesive 7 is equal to the amount of foot movement. Also, the adhesive flowing into the IJ-
This is also transmitted to the external lead-out portion of the frame 3, and this external lead-out lead is coated with insulation. Since this coating is transparent, it is difficult to detect and has the problem of causing poor conductivity.
〔発明の目的〕″：
この発明は上記事情に竺：みてなされたもので、その目
的とするところは、−接滝剤の流れ込みの問題、および
接着剤の流出による導電不良を防止し、生産性の向上が
図れる光半導体装置を提供することに・ある。[Objective of the Invention]: This invention has been made in view of the above circumstances, and its purpose is to: - prevent the problem of the flow of the adhesive and conductivity defects caused by the flow of the adhesive, and improve production. An object of the present invention is to provide an optical semiconductor device that can improve performance.
〔発明の概要〕
この発明は、光変換素子およびその周辺回路さらに光変
換素子の光路に設けられる光学フィルタをそれぞれリー
ドフレー、ムに固ｊｌた稜、光透通性樹脂でモールドし
、この光透過性樹脂上を光不透渦イｒ！！脂で被覆する
ように構成したものである。[Summary of the Invention] The present invention includes a light conversion element, its peripheral circuit, and an optical filter provided in the optical path of the light conversion element, each of which is molded with a lead frame, a rigid ridge, and a light-transmitting resin, and the light is Light-opaque vortex on transparent resin! ! It is constructed so that it is coated with fat.
以下、この発明の一実施例について図面を参照して説明
する。なお、第１図と同一部分には同一符号を付しであ
る。第２図（ａ） 、 （ｂ）において、リードフレー
ム３に光電変換素子Ｉとその周辺回路を形成した半導体
素子２さらに視感度補正フィルタ６を同庁する。すなわ
ち、光電変換素子１および半導体素子２は周知の手段に
ょシリ・ｉ町
一ドフレーム３“□に取着し、それぞれワイヤデンディ
ングを行う。そして、光電変換素子１の上部に視感度補
正フィルタ２を配設する。この１：
フィルタ２は、リードフレーム３上に溶接また・は接着
によシ固定された支持部材８．・・・の先端部で両端部
がカシメ固定支持される。このように、リードフレーム
３に固定支持した状態で光透過性モールド樹脂４中に埋
設した構造に成形被覆される。そして、との光透過性モ
ールド樹脂４の周囲を光透過性モールド樹脂５で被覆す
る。An embodiment of the present invention will be described below with reference to the drawings. Note that the same parts as in FIG. 1 are given the same reference numerals. In FIGS. 2(a) and 2(b), a semiconductor element 2 in which a photoelectric conversion element I and its peripheral circuits are formed on a lead frame 3, and a visibility correction filter 6 are mounted on the lead frame 3. That is, the photoelectric conversion element 1 and the semiconductor element 2 are attached to a frame 3'' by well-known means, and wired to each.Then, a visibility correction filter is placed above the photoelectric conversion element 1. 2. This 1: The filter 2 is fixedly supported at both ends by caulking at the tip of a support member 8 fixed on the lead frame 3 by welding or adhesive. The structure is embedded in the light-transmitting mold resin 4 while being fixedly supported by the lead frame 3.Then, the periphery of the light-transmitting mold resin 4 is covered with the light-transmitting mold resin 5. do.
この際、光不透過性モールド樹脂５の視感度補正フィル
タ６の入射光路部は除去し、光入射窓９を形成する。At this time, the incident optical path portion of the visibility correction filter 6 of the light-opaque molded resin 5 is removed to form a light incident window 9.
このように、視ｌｅ、度補正フィルタ６を、あらかじめ
光電変換素子１およびその周辺回路を形成する半導体素
子２と門１時に光透過性モールド樹脂４で被覆するので
、視感度補正フィルタ６を装着するための接着剤が不要
となシ、よってたとえ外形を形成する光不透過性モール
ド樹脂５との間に隙間を生じても、接着剤の流れ込みは
なく、外部導出リードの導電不良などが生じない。しか
も、上述したような構成であれは、光透過性モールド樹
脂４で成形した稜の取扱いが容易となシ、生産性の向上
が図れる。In this way, the visibility correction filter 6 is coated with the light-transmitting molded resin 4 at the same time as the photoelectric conversion element 1 and the semiconductor element 2 forming the peripheral circuit thereof, so that the visibility correction filter 6 is attached. Therefore, even if a gap is created between the molded resin 5 and the light-opaque mold resin 5 forming the outer shape, the adhesive will not flow in, resulting in poor conductivity of the external lead. do not have. Moreover, with the above-described configuration, the edges molded with the light-transmitting mold resin 4 can be easily handled, and productivity can be improved.
なお、視感度補正フィルタ６の置市方法は、前記実施例
に限らず、たとえは第３図に示すようにしてもよい。す
なわち、合成樹脂製の支持部月８′を使用し、この支持
部材８′の一端側はフィルタ６の端部に接着し、他端側
は゛リードフレーム３上に接ｉするものである・。
□また、前記実施例では、カメラなどに用いら
れ入射光を電気信号に変換する光半導体装置に適用した
場合について説明したが、これに限らず、入力される電
気信号を光に変換する光半導体装置にも適用し得る。Note that the method of placing the visibility correction filter 6 is not limited to the above-mentioned embodiment, and may be, for example, as shown in FIG. 3. That is, a support member 8' made of synthetic resin is used, one end of the support member 8' is adhered to the end of the filter 6, and the other end is attached to the lead frame 3.
□Also, in the above embodiment, a case was explained in which the application is applied to an optical semiconductor device that is used in a camera or the like and converts incident light into an electrical signal, but the invention is not limited to this. It can also be applied to devices.
以上詳述したようにこの発明によれば、接着剤の流れ込
みの問題、および接着剤の流出による導電不良を防止し
、生産性の向上が図れる光半導体装置を提供できる。As described in detail above, according to the present invention, it is possible to provide an optical semiconductor device that can prevent the problems of adhesive flowing in and poor conductivity due to adhesive flowing out, and improve productivity.
第１図（Ａ） 、 （ｂ）は従来の光半導体装置の構成
を説明するための平面図および側断面図、第２図（ａ）
、 （ｂ）はこの発明の一実施例を説明するための・
平面図および側断面図、第３図はこの発明の他の実施例
を説明するための側断面図である。
１・・光電変換素子（光変換素子）、２・・・周辺回路
を形成する半導体素子、３・・・リードフレーム、４・
・・光透過性樹脂、５・・光不透過性樹脂、６・・・視
感度補圧フィルタ（光学フィルタ）、８゜８′・・・支
持部材、９・・・光入射窓。
出願人代理人 弁理士 鈴 江 武 彦１１１１図Figures 1 (A) and (b) are a plan view and side sectional view for explaining the configuration of a conventional optical semiconductor device, and Figure 2 (a)
, (b) is for explaining one embodiment of this invention.
A plan view and a side sectional view. FIG. 3 is a side sectional view for explaining another embodiment of the present invention. 1... Photoelectric conversion element (photoconversion element), 2... Semiconductor element forming peripheral circuit, 3... Lead frame, 4...
... Light-transmitting resin, 5... Light-opaque resin, 6... Visibility compensating filter (optical filter), 8° 8'... Supporting member, 9... Light entrance window. Applicant's agent Patent attorney Takehiko Suzue 1111
Claims (2)
の光路に設けられる光学フィルタをそれぞれ同庁支持す
るリードフレームと、このリードフレームおよび前記光
変換素子２周辺回路。 フィルタが一体に固着される光透過性樹脂と、前記フィ
ルタの光路を除く前記光透過性樹脂上に設けられる光不
透過性樹脂とを具備してなることを特徴とする光半導体
装置。(1) A lead frame that supports an optical conversion element and its peripheral circuit as well as an optical filter provided in the optical path of the optical conversion element, and this lead frame and a peripheral circuit of the optical conversion element 2. An optical semiconductor device comprising: a light-transmitting resin to which a filter is integrally fixed; and a light-impermeable resin provided on the light-transmitting resin except for an optical path of the filter.
範囲第１項記載の光半導体装置。(2) The optical semiconductor device according to claim 1, wherein the photoconversion element is a photoelectric conversion element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57101603A JPS58218176A (en) | 1982-06-14 | 1982-06-14 | Optical semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57101603A JPS58218176A (en) | 1982-06-14 | 1982-06-14 | Optical semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58218176A true JPS58218176A (en) | 1983-12-19 |
Family
ID=14304959
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57101603A Pending JPS58218176A (en) | 1982-06-14 | 1982-06-14 | Optical semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58218176A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60156759U (en) * | 1984-03-28 | 1985-10-18 | ミツミ電機株式会社 | Light-electric conversion device |
| US5770889A (en) * | 1995-12-29 | 1998-06-23 | Lsi Logic Corporation | Systems having advanced pre-formed planar structures |
| US5834799A (en) * | 1989-08-28 | 1998-11-10 | Lsi Logic | Optically transmissive preformed planar structures |
| US6274391B1 (en) * | 1992-10-26 | 2001-08-14 | Texas Instruments Incorporated | HDI land grid array packaged device having electrical and optical interconnects |
| US7663095B2 (en) * | 2007-09-20 | 2010-02-16 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Photodetector with embedded infrared filter |
| CN105990297A (en) * | 2015-01-28 | 2016-10-05 | 苏州普福斯信息科技有限公司 | Structure of using incoordinate die cavity to cooperate non-sinking wire frame |
-
1982
- 1982-06-14 JP JP57101603A patent/JPS58218176A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS60156759U (en) * | 1984-03-28 | 1985-10-18 | ミツミ電機株式会社 | Light-electric conversion device |
| US5834799A (en) * | 1989-08-28 | 1998-11-10 | Lsi Logic | Optically transmissive preformed planar structures |
| US6274391B1 (en) * | 1992-10-26 | 2001-08-14 | Texas Instruments Incorporated | HDI land grid array packaged device having electrical and optical interconnects |
| US5770889A (en) * | 1995-12-29 | 1998-06-23 | Lsi Logic Corporation | Systems having advanced pre-formed planar structures |
| US7663095B2 (en) * | 2007-09-20 | 2010-02-16 | Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. | Photodetector with embedded infrared filter |
| CN105990297A (en) * | 2015-01-28 | 2016-10-05 | 苏州普福斯信息科技有限公司 | Structure of using incoordinate die cavity to cooperate non-sinking wire frame |
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