JPH02207570A - Solid-state image sensing device - Google Patents

Abstract

PURPOSE:To prevent optical information from being distorted by a method wherein a light- transmitting member is fixed on the photodetecting surface of a solid-state image sensing element. CONSTITUTION:A through hole and a penetrated hole are punched in a fixing material 4, which is a little thickish than the thickness of a solid-state image sensing element 3 having external connecting terminals 2 and consists of a polycarbonate resin, and the element 3 is fitted in the element 3. The material 4 with the element 3 fitted in it is heated and pressed to deform plastically the material 4 and the element 3 is buried in the material 4. Then, wiring patterns 5 are arranged on the material 4 using a resin conductive paste. At this time, external lead-out wiring patterns 6 are respectively provided at the ends, which are located on the side opposite to the connection of the wiring patterns 5 with the bumps 2, of the wiring patterns 5. Moreover, a wiring for making continuity with the rear of the element 3 is connected through the through hole 7. The wiring patterns subsequent to printing are cured and are fixed on the material 4. A photodetecting surface part of the element 3 and a covering material 8 having openings and a covering material 9 are simultaneously superposed on the material 4, are heated and pressed and are laminated. After that, a light- transmitting member 10 is bonded and fixed on the light-photodetecting surface of the element 3 with a transparent resin 11. Thereby, optical information is prevented from being distorted and at the same time, a light and thin solid-state image sensing device 1 is obtained.

Description

[Detailed description of the invention] [Purpose of the invention] (Industrial application field) The present invention relates to a solid-state imaging device.

(Prior Art) In general, a solid-state imaging device is a solid-state imaging device by forming a plurality of photoelectric conversion elements on a semiconductor substrate, mounting this solid-state imaging device in an envelope made of ceramic or the like, and performing predetermined wiring. Created by FIG. 5 shows a conventional general resin-embedded solid-state imaging device 50. As shown in FIG. This solid-state imaging device 5
Reference numeral 0 denotes an imaging device for distance measurement, and the outer enclosure has a structure in which a lower substrate 52 on which an external lead wiring pattern is formed and an upper substrate 54 that prevents the resin sealant 53 from protruding to the outside are bonded together with an adhesive. A solid-state image sensor 56 is fixed inside the container via a mounting agent 55. This solid-state image sensor 56 is -
It has a plurality of photoelectric conversion elements arranged dimensionally or two-dimensionally. A bonding wire 57 is formed between a predetermined portion of the external wiring pattern of the lower substrate 52 and the external connection terminal of the solid-state image sensor 56 and is made of a thin gold or aluminum wire.
connected by. Although not shown, the wiring pattern at the end of the lower substrate 52 is provided with an external connection pattern by through-hole processing, etc., and the semiconductor integrated circuit in the solid-state image sensor 56 is connected to the bonding wire 5.
7. It will be electrically connected to an external drive circuit via the wiring pattern on the lower substrate 52 and the above-mentioned external connection pattern. In order to protect the solid-state image sensor 56, a transparent member 58 is fixed to the solid-state image sensor 56 via a resin-based transparent sealant 53.

In order to measure distance using this solid-state imaging device 50, optical information from a subject (not shown) is passed through the lens system of the camera, and the solid-state imaging device An image is formed on the surface of the cord 56. The location where the photoelectrically converted amount of electricity is maximum is the location being measured.

(Problem to be solved by the invention) However, the solid-state imaging device 5 obtained in this way
0 has the following problems.

(1) The light-transmitting member that protects the solid-state image pickup device warps, and in extreme cases it may cause destruction and block optical information. Even if it does not lead to destruction, when the photoelectric conversion element is minute like in a two-dimensional solid-state imaging device, the optical information is distorted due to the warping of the light-transmitting member, making it difficult to obtain accurate optical information (flare). phenomenon). Particularly in the case shown in Fig. 5, tensile stress (bending stress for the translucent member 58) in the direction of the arrow in the figure occurs during the process of returning the translucent member to room temperature after heating for curing the resin. 58 continues to be stressed, causing problems similar to those described above.

Furthermore, due to the manufacturing method, workability, and miniaturization of solid-state imaging devices, glass, which is a typical material for the light-transmitting member 58, has a thickness that can be reduced to bring the amount of warpage due to tensile stress close to zero. It is necessary to make the material thicker, but there is a limit to how thick it can be, and making it thicker also makes it larger and more expensive.

(2) The external connection terminal (bonding butt) of the solid-state image sensor 56 and the wiring pattern (
Since the inner lead terminal (inner lead terminal part) is connected loosely with a thin wire, there is a limit to how far it can be made light, thin, and compact.

(3) Also, when removing dust, foreign matter, etc. adhering to the light-transmitting member, a cleaning operation is performed using a cotton swab or the like soaked with ordinary alcohol or the like. At this time, if the resin sealant is an elastic material, the external pressure or the pressure due to the weight of the transparent member is applied to the transparent sealant or directly to the thin wire through the transparent member. This may cause deformation or breakage.

(4) The light-transmitting member is arranged in the center of the concave envelope and parallel to the solid-state image sensor surface due to variations in the height of the thin wire (loop height) or the flow of resin that occurs when heating the transparent resin. is extremely difficult and distorts the path of optical information.

The present invention has been made in consideration of the above problems, and includes:
It is an object of the present invention to provide a solid-state imaging device that can prevent optical information from being distorted as much as possible and is as lightweight as possible.

[Structure of the invention]

(Means for Solving the Problems) A solid-state imaging device according to a first aspect of the present invention includes a through hole for embedding and fixing a solid-state imaging device in a fixing material having a thickness approximately equal to the thickness of the solid-state imaging device having an external connection terminal. A hole is made, a solid-state image sensor is inserted into this through-hole, and the solid-state image sensor is buried and fixed so that the light-receiving surface of the solid-state image sensor is exposed.The external drive circuit that drives the solid-state image sensor is connected to the external connection terminal of the solid-state image sensor. A wiring pattern is formed on the fixing material, both sides of the fixing material are covered with a covering material so that the light receiving surface of the solid-state image sensor is exposed, and a translucent member is fixed on the exposed light receiving surface. shall be.

In the solid-state imaging device according to the second invention, a through-hole for embedding and fixing the solid-state imaging device is provided in a fixing material having a thickness approximately equal to the thickness of the solid-state imaging device having external connection terminals, and a solid-state imaging device is provided in the through-hole. Insert the image sensor, bury it and fix it so that the light-receiving surface of the solid-state image sensor is exposed, and form a wiring pattern on the fixing material to connect the external drive circuit that drives the solid-state image sensor and the external connection terminal of the solid-state image sensor. However, the fixing material is characterized in that the light-receiving surface side of the solid-state image pickup device of both surfaces thereof is covered with a covering material made of a light-transmitting material.

(Function) According to the solid-state imaging device of the first invention configured as described above, the light-transmitting member is fixed on the light-receiving surface of the solid-state imaging device, so that the solid-state imaging device and the light-transmitting member are separated from each other. The distance can be made shorter than that of conventional solid-state imaging devices. This not only makes it possible to make the light-receiving surface of the solid-state image sensor and the surface of the light-transmitting member opposite to the light-transmitting member as parallel as possible, but also makes it possible to reduce the bending stress acting on the light-transmitting member to zero. Distortion of optical information can be prevented as much as possible. Further, the solid-state image sensor is embedded and fixed in a fixing material having a thickness approximately equal to the thickness of the solid-state image sensor, and a light-transmitting member is fixed to the light-receiving surface of the solid-state image sensor. The thickness of the solid-state imaging device according to the invention is approximately close to the thickness of the solid-state imaging element. This makes it possible to obtain a solid-state imaging device that is as light and thin as possible.

According to the solid-state imaging device of the second invention configured as described above, the solid-state imaging device is embedded and fixed in the fixing material having a thickness substantially equal to the thickness of the solid-state imaging device. Further, of both surfaces of the fixing material, the light-receiving surface side of the solid-state image sensor is covered with a covering material made of a light-transmitting material. As a result, not only does the thickness of the solid-state imaging device of the second invention become almost the same as the thickness of the solid-state imaging device, but also the distance between the solid-state imaging device and the light-transmitting coating material is reduced compared to that of the conventional solid-state imaging device. It is possible not only to obtain a solid-state imaging device that is shorter and thinner than possible, but also to prevent optical information from being distorted as much as possible.

(Embodiment) FIG. 1 shows a sectional view of a first embodiment of a solid-state imaging device according to the first invention. In FIG. 1, a through hole and a through hole for embedding the solid-state image sensor 3 are punched out using a press or the like in a fixing material 4 made of polycarbonate resin that is slightly thicker than the solid-state image sensor 3 having an external connection terminal (for example, a solder bump) 2. , insert the solid-state image sensor 3. The fixing material 4 into which the solid-state imaging device 3 is fitted is heated and pressed at a temperature of, for example, 170 to 200°C to plastically deform the fixing material and embedding the solid-state imaging device 3 (however, the light-receiving surface of the solid-state imaging device 3 is not exposed). ). At this time, the polycarbonate resin flows into the peripheral portion of the solid-state imaging device 3, and the area around the solid-state imaging device 3 is insulated. In this way, the solid-state image sensor 3 is embedded and fixed in the fixing material 4. Next, in order to connect to the bump 2, a wiring pattern 5 is provided on the fixing material 4 by screen printing using a resin-based conductive paste using low-temperature thick film printing technology. At this time, an external lead wiring pattern 6 is provided at the wiring end opposite to the connection with the bump 2. Further, wiring for establishing conduction on the back surface of the solid-state image sensor 3 is connected via the through hole 7.

In FIG. 1, the external lead wiring pattern is provided on the same side, but it may be freely provided on both sides or one side depending on the arrangement design of the external lead wiring pattern.

The printed wiring pattern is cured at around 150° C. and fixed to the fixing material 4. A covering material 8 having openings at the light-receiving surface of the solid-state image sensor 3 and a portion that will serve as an outlet for the external lead wiring pattern, and a covering material 9 that protects the back side of the solid-state image sensor 3 are simultaneously overlapped with the fixing material 4 and heated. Press and laminate.

Thereafter, a transparent resin 11 (
For example, Si resin, etc.), the translucent member 10 is adhesively fixed at a temperature of about 120 to 150°C.

In the solid-state imaging device 1 configured in this way,
The distance between the surfaces of the light-transmitting member 10 and the solid-state image sensor 3 is equal to the thickness of the adhesive layer made of the transparent resin 11, and the distance between the surfaces of the light-transmitting member 10 and the solid-state image sensor 3 is Not only is it easy to take out the solid-state imaging device 1, but the overall thickness of the solid-state imaging device 1 can be approximately the same as that of the solid-state imaging device 3, making it possible to make it lighter and thinner. Further, there is no bending stress acting on the translucent member 10, and the translucent member 1
0, optical information is not distorted, the flare phenomenon is reduced, and at the same time, bending stress is eliminated, so an extremely thin translucent member 10, for example, one with a thickness of about 0.1 to 0.3 mm is used. This makes it possible to reduce light absorption by the translucent member 10.

FIG. 2 shows a cross section of a second embodiment of the solid-state imaging device according to the first invention. The solid-state imaging device IA of the second embodiment has a printed wiring pattern 5a on the back surface of the solid-state imaging device 3 with a first
It is larger than that of the solid-state imaging device 1 of the first embodiment shown in the figure, and the same effects as the first embodiment can be obtained.

FIG. 3 shows a cross section of the first embodiment of the solid-state imaging device according to the second invention. In the solid-state imaging device IB of the first embodiment, the covering material 8 on the light-receiving surface side of the solid-state imaging element 3 is formed of a transparent material, and also serves as the translucent member 10 shown in FIG.

This embodiment can also obtain the same effects as the first embodiment shown in FIG.

FIG. 4 shows a second embodiment of the solid-state imaging device according to the second invention. In the solid-state imaging device of this embodiment, the solid-state imaging device 3 is located on the covering material 8 of the solid-state imaging device shown in FIG.
A light-shielding film 12 for shielding stray light components is disposed in a region other than the region corresponding to the light-receiving surface of the light receiving surface (excluding the region serving as the exit of the external lead-out wiring pattern). This embodiment can also obtain the same effects as the solid-state imaging device shown in FIG.

〔Effect of the invention〕

As described above, according to the present invention, distortion of optical information can be prevented as much as possible, and a solid-state imaging device that is as light and thin as possible can be obtained.

[Brief explanation of the drawing]

FIG. 1 is a cross-sectional view of a first embodiment of the solid-state imaging device according to the first invention, FIG. 2 is a cross-sectional view showing a second embodiment of the solid-state imaging device according to the first invention, and FIG. 2 is a cross-sectional view showing the first embodiment of the solid-state imaging device according to the invention of No.
FIG. 5 is a sectional view of a conventional solid-state imaging device. 1... Solid-state imaging device, 2... External connection terminal, 3...
- Solid-state image sensor, 4... Fixing material, 5... Wiring pattern, 8.9... Covering material, 10... Translucent member, 11
...Transparent resin. Applicant's agent Mr. Sato

Claims (1)

[Claims] 1. A through hole for embedding and fixing the solid-state image sensor is provided in a fixing material having a thickness approximately equal to the thickness of the solid-state image sensor having an external connection terminal, and the solid-state image sensor is provided in the through hole. An image sensor is inserted and buried and fixed so that the light-receiving surface of the solid-state image sensor is exposed, and a wiring pattern for connecting an external drive circuit that drives the solid-state image sensor and an external connection terminal of the solid-state image sensor is fixed. The fixing material is formed on a material, both sides of the fixing material are covered with a covering material so that the light receiving surface of the solid-state image sensor is exposed, and a translucent member is fixed on the exposed light receiving surface. Solid-state imaging device. 2. A through hole for embedding and fixing the solid-state image sensor is provided in a fixing material having a thickness approximately equal to the thickness of the solid-state image sensor having an external connection terminal, and the solid-state image sensor is inserted into the through hole. burying and fixing the solid-state image sensor so that its light-receiving surface is exposed, and forming a wiring pattern on the fixing material to connect an external drive circuit that drives the solid-state image sensor and an external connection terminal of the solid-state image sensor; A solid-state imaging device characterized in that, of both surfaces of the fixing material, a light-receiving surface side of the solid-state imaging device is covered with a covering material made of a light-transmitting material. 3. The solid-state imaging device according to claim 2, wherein a region other than the region corresponding to the light-receiving surface of the solid-state imaging device among the regions on the covering material made of the light-transmitting material is covered with a light-shielding film. .