JPS61174766A - Solid image pickup device and manufacture thereof - Google Patents
Solid image pickup device and manufacture thereofInfo
- Publication number
- JPS61174766A JPS61174766A JP60014319A JP1431985A JPS61174766A JP S61174766 A JPS61174766 A JP S61174766A JP 60014319 A JP60014319 A JP 60014319A JP 1431985 A JP1431985 A JP 1431985A JP S61174766 A JPS61174766 A JP S61174766A
- Authority
- JP
- Japan
- Prior art keywords
- solid
- sealing material
- package
- image sensor
- sealing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000007787 solid Substances 0.000 title abstract 2
- 239000003566 sealing material Substances 0.000 claims abstract description 30
- 239000011521 glass Substances 0.000 claims abstract description 16
- 229910052745 lead Inorganic materials 0.000 claims abstract description 9
- 229910052725 zinc Inorganic materials 0.000 claims abstract description 9
- 229910052738 indium Inorganic materials 0.000 claims abstract description 8
- 229910001092 metal group alloy Inorganic materials 0.000 claims abstract description 7
- 229910052718 tin Inorganic materials 0.000 claims abstract description 7
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 6
- 238000002844 melting Methods 0.000 claims abstract description 5
- 230000008018 melting Effects 0.000 claims abstract description 5
- 238000010438 heat treatment Methods 0.000 claims abstract description 4
- 238000007789 sealing Methods 0.000 claims description 20
- 238000003384 imaging method Methods 0.000 claims description 14
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 238000003825 pressing Methods 0.000 claims description 2
- 238000006073 displacement reaction Methods 0.000 abstract description 3
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 230000006866 deterioration Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000009529 body temperature measurement Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229920006332 epoxy adhesive Polymers 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000006089 photosensitive glass Substances 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 238000004506 ultrasonic cleaning Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明のＶＣ術分野〕
本発明はＴＶ左カメラに使用される固体撮像装置とその
製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Field of VC technology of the invention] The present invention relates to a solid-state imaging device used in a TV left camera and a manufacturing method thereof.
凹部に固体撮像素子が収納さｒしたパッケージの開口端
側？二は、固体撮像素子を外部から保護するためＣ，通
常は透光性ガラス仮が収り付けられている。The open end side of the package where the solid-state image sensor is housed in the recess? Second, to protect the solid-state image sensor from the outside, C is usually a temporary light-transmitting glass.
この透光性ガラス板をパンケージに数り付けるのに、ア
クリル系及びエポキシ系等の有機接着剤を使用して、直
接に貼り合わせることがある。しかし有機接着剤は水分
や酸素等の浸透があり、充分な固体撮像装置の信頼性が
得られない。In order to attach the translucent glass plate to the pan cage, organic adhesives such as acrylic and epoxy adhesives may be used to directly attach the plates. However, organic adhesives allow moisture, oxygen, and the like to penetrate, making it difficult to obtain sufficient reliability for solid-state imaging devices.
そこで封着用金属例えばコバール全フリット等で固着し
た透光性ガラス仮を、パッケージの開口端！ニメタライ
ズ等で設置した封着環と、半田封着或いはシーム封着す
る方法がある。しかしこの方法は、封着時に２００℃以
上の高温？−する必要があり、固体撮像素子が劣下し破
壊される恐れがある。Therefore, a temporary light-transmitting glass fixed with a sealing metal such as Kovar full frit is attached to the open end of the package! There are two methods: a sealing ring installed by Nimetallization, solder sealing, or seam sealing. However, this method requires high temperatures of over 200℃ during sealing. - There is a risk that the solid-state image sensor may deteriorate and be destroyed.
特に近年は、固体のスイッチング走査素子上に光導電膜
及び色分解用のカラーフィルターを積層させた形の固体
撮像装置の開発が盛んＣ２行なわれているが、１５０℃
以下の温度雰囲気で封着を行なわないと、光導電膜及び
カラーフィルターの特性が劣下してしまう。In particular, in recent years, solid-state imaging devices in which a photoconductive film and a color filter for color separation are laminated on a solid-state switching scanning element have been actively developed.
If sealing is not performed in an atmosphere at a temperature below, the properties of the photoconductive film and color filter will deteriorate.
本発明はこのような従来の欠点を解決するためＩ：なさ
れたもので、外気に対して完全に気密な封着剤を使用し
、且つ固体撮像素子の劣下ン引き起こさない程度の温度
で透光性ガラス板をパッケージに接着することの可能な
固体撮像装置及びその製造方法の提供を目的とする。The present invention has been made to solve these conventional drawbacks, and uses a sealing agent that is completely airtight against the outside air and is transparent at a temperature that does not cause deterioration of the solid-state image sensor. The object of the present invention is to provide a solid-state imaging device in which a photosensitive glass plate can be bonded to a package, and a method for manufacturing the same.
即ち本発明に係る固体＃Ｉｌ像装置は、固体撮像素子ン
透光性ガラス板で気密封着するとき用いる封案材をＰｂ
、Ｓｎ系に二Ｉｎ、Ｚｎ、Ｓｂを添加した活性金属合金
としている。That is, in the solid-state #Il image device according to the present invention, the sealing material used when the solid-state image sensor is hermetically sealed with a translucent glass plate is Pb.
, an active metal alloy in which In, Zn, and Sb are added to the Sn-based alloy.
また本発明Ｃ２係る製造方法は、この材料からなる環状
の封着材ｔ１透光性ガラス板とパッケージの開口端面と
の間Ｃ；挾持し、圧力を加えながら封着材の融点よりも
低い温度に加熱することにより、固体撮像素子を封着す
ることｔ特徴としている。In addition, in the manufacturing method according to C2 of the present invention, an annular sealing material t1 made of this material and an open end surface of the package are held between C; and a temperature lower than the melting point of the sealing material while applying pressure. The feature is that the solid-state image sensor is sealed by heating to .
第１図は本発明の装置の一実施例を示す図である。これ
からこの実施例を製造工程Ｃ２従って説明する。パッケ
ージ（１）は例えば積層構成の焼結されたセラミックか
らなり、底部Ｑ１）−（ｌρ、 （１４）及び端部（ｌ
−が形成されている。また図示していないが導電性金属
パターンが段部（ｌ、）上でセラミックを貫通して形成
され、パッケージ（１）の側面（Ｉｓ）に設けられた外
部接続用端子（２）を二電気的に接続されている。そし
てパッケージ（１） ｌ’、洗浄を施して油汚れ等！完
全に除去した後、底部（１１）即ち凹部上には、λｇペ
ースト等の導電材料６；より固体撮像素子（３）が収納
固定されている。また固体撮像素子（３）の周縁に股け
られた多数個のポンディングパッド（４）は、ボンディ
ングワイヤ（５）を介して前述の導電性金属パターンに
接続されている。そしてパッケージ（１）の段部（Ｉｓ
） 、 （１４）と端部（Ｌ ｇ）、即ち開口端面（ユ
は、充分（：洗浄された後ベーキングにより脱水さｎた
透光性ガラス板（６）を封着材（７）を介して接着して
、固体撮像素子（３）を気密に封着する。なＳ封着材（
力は、Ｐｂ、Ｓｎ系にＩｎ、Ｚｎ、Ｉ９ｂ’ｋ ｔｉ加
した活性金層合金である。ガラス板とセラミックになじ
みしかも接合する活性金属としては、Ｐｂ 、 Ｓｎ系
にＺｎ。FIG. 1 is a diagram showing an embodiment of the apparatus of the present invention. This embodiment will now be explained according to the manufacturing process C2. The package (1) consists, for example, of sintered ceramic in a laminated configuration, with a bottom part Q1)-(lρ, (14) and an end part (l)
- is formed. Although not shown, a conductive metal pattern is formed on the stepped portion (l,) by penetrating the ceramic, and connects the external connection terminal (2) provided on the side surface (Is) of the package (1) with two electrical contacts. connected. And package (1) l', washed to remove oil stains, etc.! After being completely removed, the solid-state imaging device (3) is housed and fixed on the bottom (11), that is, the recess, with a conductive material 6 such as λg paste. Further, a large number of bonding pads (4) arranged around the periphery of the solid-state image sensor (3) are connected to the above-mentioned conductive metal pattern via bonding wires (5). And the step part (Is
), (14) and the end (Lg), that is, the open end surface (Y), are thoroughly cleaned and dehydrated by baking, then the translucent glass plate (6) is placed through the sealing material (7). to airtightly seal the solid-state image sensor (3). S sealing material (
The material is an active gold layer alloy containing Pb, Sn, and In, Zn, and I9b'kti. Active metals that are compatible with and bond to glass plates and ceramics include Pb, Sn, and Zn.
Ｓｂ７添加したセラソルザ（旭硝子の商品名）が知られ
ている。しかし七うソルザは、軟化する温度が１７０’
ＣＰｉ上であり、１５０℃以下の温度雰囲気での封着は
不可能である。そこで封着材（７）は、セラソルザＣ：
更【二Ｉｎを添加することにより、軟化温ｒ融点をそｎ
ぞれ１３０℃、１６０℃としている。Cerasolza (trade name of Asahi Glass) containing Sb7 is known. However, Nanau Solza has a softening temperature of 170'
It is on CPi, and sealing is impossible in an atmosphere at a temperature of 150° C. or lower. Therefore, the sealing material (7) is Cerasolza C:
Furthermore, by adding In, the softening temperature and melting point can be lowered.
The temperatures are 130°C and 160°C, respectively.
第２図は封着材（７）の形状の一例を示す図である。FIG. 2 is a diagram showing an example of the shape of the sealing material (7).
第２図Ｃ：示すように封着材（力は、活性金属合金線全
角型に成形したものを、両端を斜め切りしてつき合わせ
てあって環状であり、太さは１．ｍ程度である。なお封
着材（７）は使用直前に、トリクレン超音波洗浄で油汚
１ｒｌ’除去し、更（：希塩酸中に数分間浸種して酸化
物被膜を除去し、純水ですすいだ後ζ；乾燥させること
が望ましい。Figure 2 C: As shown, the sealing material is made of an active metal alloy wire formed into a full square shape, diagonally cut at both ends, and brought together to form a ring shape, with a thickness of about 1.0 m. Immediately before use, the sealing material (7) was cleaned with Triclean ultrasonic cleaning to remove any oil stains, and then immersed in dilute hydrochloric acid for several minutes to remove the oxide film, and rinsed with pure water. It is desirable to dry it.
第３図は固体撮像素子（３）を封着する前後の封着材（
７）の状態乞示す図であり、第３図＋８）は封着前、第
３図（ｂ）は封着後を表わしている。透光性ガラス板＋
６１ ’＆パッケージ（１）に接着する際Ｃ：は第３図
（ａ）に示すようＣ，封着材（力は段部（１４）即ちパ
ッケージ（１）の開口端面の溝部に人れておく。そして
この溝部は幅２ＩＩＩ１１深さＱ、４ｍｒｌ二設定して
あって、透光性ガラス′ＦＬｉ６） ７にパッケージ（
１）に接着した後には第３図ｉｂ）に示すようｆ二、封
着材（７）が溝部内ン埋めるよう配慮しである。なお端
部（ｉｍ）の突起は、透光性ガラス板（６）の端部を保
護する役割をもっている。Figure 3 shows the sealing material (
7), FIG. 3+8) shows the state before sealing, and FIG. 3(b) shows the state after sealing. Translucent glass plate +
61'& When adhering to the package (1), as shown in Fig. 3(a), the pressure is applied to the sealing material (the force is applied to the step (14), that is, the groove on the open end surface of the package (1)). This groove is set to have a width of 2III, a depth of Q, and a depth of 4 mrl.
After adhering to 1), care was taken to fill the groove with the sealing material (7) as shown in Figure 3 ib). Note that the protrusion at the end (im) has the role of protecting the end of the translucent glass plate (6).
第４図は固体撮像素子（３）を封着するとき用いる装置
の一例を示す概略図であり゛５．第１図と同じ部分には
同一の符号を付しである。第４図に示すように、固体撮
像素子（３）が凹部に収納固定されたパッケージ（１）
に封着材（力と透光性ガラス板（６）を載せて、封着材
（７）を透光性ガラス板（６）とパッケージ（１）の開
口端面との間に挾持した後、温調付電源ＣＩＩ Ｃより
温度制御されている補助熱板同上にパッケージ（１）ン
設置する。なお補助熱ｖｉσυには、補助ヒーター（１
つと温度測定用熱電対ａ３とが埋め込まれている。FIG. 4 is a schematic diagram showing an example of an apparatus used when sealing the solid-state image sensor (3). The same parts as in FIG. 1 are given the same reference numerals. As shown in Fig. 4, a package (1) in which a solid-state image sensor (3) is housed and fixed in a recess.
After placing the sealing material (force) and the translucent glass plate (6) on the plate and sandwiching the sealing material (7) between the translucent glass plate (6) and the open end surface of the package (1), The package (1) is installed on the same auxiliary heat plate whose temperature is controlled by the temperature-controlled power supply CII C.The auxiliary heat viσυ is provided with an auxiliary heater (1)
A thermocouple a3 for temperature measurement is embedded.
ここで補助熱板αυの温度は、封着材（７）の軟化温度
よりも１０〜３０℃低い温度即ち１００〜１２０℃に設
定されている。そしてヒーター電濃釦二つながれた生ヒ
ーターαりが埋め込まれているヒーターブロック（ｌｓ
廖透光性ガラス仮（６）上に装置し、＠球αη！介して
エアーシリンダαａで加圧する。なお加圧圧力は封着面
檀ｔｉ当たり２０〜２００ＫＰに選定する。そして加圧
した時点を変位センサー１’ｌの出発点とし、更に主ヒ
ーター（１５１を通電してヒーターブロック（１６）の
温度を上昇させる。この温度上昇速度はヒーター電源コ
ントローラー■Ｃ：より０．５℃／秒〜５℃、４少の間
で選定できるが、封着歩留り及び再現性の面から１℃／
秒程度が最適である。加圧圧力ｆ二依存するが、ヒータ
ーブロック（Ｌｅの温度が封着材（７）の融点より低い
温度即ち１４５℃〜１５０’ｃ１：なったときに、変位
センサー（１！Ｊ ｔ＝よって位置移動量の変位がなく
なったことｔ検出し、遅くともこの時点でヒーター電源
（１４Ｊを切る。或いはあらかじめ位置移動量を設定し
ておき、設定１＋ユなったらヒーター電源（１４）Ｙ切
ってもよい。この後は自然冷却或いは強制冷却等により
温度が１２０”ｃ以下になったら、エアーシリンダーα
８ｆ；よる加圧！止め、所望の固体撮像装置が得られる
。なお第４図に本した装置の少なくともパッケージ（１
）の周辺はＮ！の雰囲気中にあり、封着完了後はパッケ
ージ（１〕内にＮ、が封入された状態となる。またヒー
ターブロックａｅの熱容量は小さいことが望ましい。即
ち熱容置が大きいと、加熱終了時Ｃ：温度が高い状態が
長時間続いて封着材（７）が軟化しすぎ、圧力のかから
ない状態になりやすく封着の歩留りｔ低下させる原因と
なる。Here, the temperature of the auxiliary heating plate αυ is set to 10 to 30°C lower than the softening temperature of the sealing material (7), that is, 100 to 120°C. And the heater block (ls
Installed on a transparent glass temporary (6), @ sphere αη! Pressure is applied via the air cylinder αa. Note that the pressurizing pressure is selected to be 20 to 200 KP per sealing surface ti. Then, the point at which the pressure is applied is set as the starting point for the displacement sensor 1'l, and the main heater (151) is further energized to raise the temperature of the heater block (16). It can be selected from 5℃/sec to 5℃, 4 degrees, but from the viewpoint of sealing yield and reproducibility, 1℃/sec.
Approximately a second is optimal. Although it depends on the pressurizing pressure f2, when the temperature of the heater block (Le is lower than the melting point of the sealing material (7), that is, 145°C to 150'c1: It is detected that the amount of displacement has disappeared, and the heater power source (14J) is turned off at the latest at this point. Alternatively, the positional movement amount may be set in advance and the heater power source (14) Y is turned off when the setting reaches 1+Y. After this, when the temperature drops to 120"C or less due to natural cooling or forced cooling, the air cylinder α
8f; Pressurize! The desired solid-state imaging device is obtained. It should be noted that at least the package (1
) is N! After the sealing is completed, N is sealed inside the package (1).It is also desirable that the heat capacity of the heater block ae is small.In other words, if the heat chamber is large, the C: If the temperature remains high for a long time, the sealing material (7) becomes too soft and no pressure is applied, which causes a decrease in the sealing yield.
この実施例においては、固体撮像素子（３）を気密に封
着する封着材（７）としてＰｂ、Ｓｎ系にＩｎ、Ｚｎ、
８ｂ’１添加した活性金属合金！用いるため、高い信頼
性が邊られる。また固体撮像素子（３）を封着する際の
温度Ｙ１５０℃以下にできるので、固体撮像素子（３）
の劣下を防げる。In this embodiment, the sealing material (7) for airtightly sealing the solid-state image sensor (3) is Pb, Sn-based, In, Zn,
Active metal alloy with 8b'1 added! Because it is used, it has high reliability. In addition, since the temperature Y when sealing the solid-state image sensor (3) can be kept below 150°C, the solid-state image sensor (3)
can prevent the deterioration of
なお封着材（７）の形状は第２図に本したちのＣ２限ら
れないことは明らかであり、パッケージ（１）の開口端
面の溝部の寸法（二合わせて自由に股定できる。It is clear that the shape of the sealing material (7) is not limited to the shape C2 shown in FIG.
また完成した固体撮像装置のパッケージ（１）と透光性
ガラス仮（６）の端部との間隙に、防湿用シリコーン等
を塗布しておくことは、より耐湿性を向上させるという
点で有効である。Also, it is effective to apply moisture-proof silicone or the like to the gap between the package (1) of the completed solid-state imaging device and the end of the transparent glass temporary (6) in order to further improve moisture resistance. It is.
以上説明したように本発明の固体撮像装置は、Ｐｂ 、
Ｓｎ系にＩｎ、Ｚｎ、Ｓｂを添加した活性金属合金！固
体撮像素子を封着する封着材として用いることにより、
水分等（二対して安定で高い信頼性を得ることができる
。As explained above, the solid-state imaging device of the present invention includes Pb, Pb,
Active metal alloy with Sn-based addition of In, Zn, and Sb! By using it as a sealing material to seal the solid-state image sensor,
It is stable and highly reliable compared to moisture, etc.
また本発明の製造方法は、１５０’Ｃ以下の温度雰囲気
で固体撮像素子の封ＩＦを行なえるため、固体撮像素子
の劣下を防ぐことができる。Furthermore, since the manufacturing method of the present invention allows sealing of the solid-state image sensor in an atmosphere at a temperature of 150'C or lower, deterioration of the solid-state image sensor can be prevented.
第１図は本発明の装置の一実施例を示す図、第２図は封
着材の形状の一例を示す図、第３図は固体撮像素子を封
着する前後の封着材の状態を示す図、第４図は固体撮像
素子を封着するとき用いる装置の一例！示す概略図であ
る。
（１）・・・パッケージ （３）・・・固体撮像
素子（６）・・・透光性ガラスｉ （カ・・・封看
材代理人 弁理士 則 近 憲 佑
（ばか１名）
第 １ 図
第 ３ 図
（ａ、）
（／Ａ）Fig. 1 shows an embodiment of the apparatus of the present invention, Fig. 2 shows an example of the shape of the sealing material, and Fig. 3 shows the state of the sealing material before and after sealing the solid-state image sensor. The figure shown in Figure 4 is an example of the device used to seal the solid-state image sensor! FIG. (1)...Package (3)...Solid-state imaging device (6)...Translucent glass Figure 3 (a,) (/A)
Claims (3)
と、前記パッケージの開口端面に封着材を介して接着さ
れて前記固体撮像素子を封着する透光性ガラス板とを備
えた固体撮像装置において、前記封着材はＰｂ、Ｓｎ系
にＩｎ、Ｚｎ、Ｓｂを添加した活性金層合金からなるこ
とを特徴とする固体撮像装置。(1) A solid-state image sensor comprising a package in which a solid-state image sensor is housed and fixed in a recess, and a translucent glass plate that is adhered to the open end surface of the package via a sealing material to seal the solid-state image sensor. A solid-state imaging device, wherein the sealing material is made of an active gold layer alloy in which In, Zn, and Sb are added to a Pb and Sn system.
いることを特徴とする特許請求の範囲第１項記載の固体
撮像装置。(2) The solid-state imaging device according to claim 1, wherein the open end surface has a groove into which the sealing material is inserted.
工程と、Ｐｂ、Ｓｎ系にＩｎ、Ｚｎ、Ｓｂを添加した活
性金属合金からなる環状の封着材を、透光性ガラス板と
前記パッケージの開口端面との間に挾持して圧力を加え
ながら前記封着材の融点よりも低い温度に加熱して前記
固体撮像素子を封着する工程とを備えたことを特徴とす
る固体撮像装置の製造方法。(3) A step of storing and fixing the solid-state imaging device in the recess of the package, and attaching a ring-shaped sealing material made of an active metal alloy of Pb and Sn to which In, Zn, and Sb are added to the translucent glass plate and the package. and sealing the solid-state imaging device by heating it to a temperature lower than the melting point of the sealing material while applying pressure to the solid-state imaging device. Production method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60014319A JPS61174766A (en) | 1985-01-30 | 1985-01-30 | Solid image pickup device and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP60014319A JPS61174766A (en) | 1985-01-30 | 1985-01-30 | Solid image pickup device and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61174766A true JPS61174766A (en) | 1986-08-06 |
Family
ID=11857763
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP60014319A Pending JPS61174766A (en) | 1985-01-30 | 1985-01-30 | Solid image pickup device and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61174766A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5550398A (en) * | 1994-10-31 | 1996-08-27 | Texas Instruments Incorporated | Hermetic packaging with optical |
| JP2007324303A (en) * | 2006-05-31 | 2007-12-13 | Hitachi Cable Ltd | Optical module and packaging method therefor |
| EP2980872A1 (en) * | 2014-08-01 | 2016-02-03 | Hitachi-LG Data Storage, Inc. | Optical module and method of making the same |
-
1985
- 1985-01-30 JP JP60014319A patent/JPS61174766A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5550398A (en) * | 1994-10-31 | 1996-08-27 | Texas Instruments Incorporated | Hermetic packaging with optical |
| JP2007324303A (en) * | 2006-05-31 | 2007-12-13 | Hitachi Cable Ltd | Optical module and packaging method therefor |
| EP2980872A1 (en) * | 2014-08-01 | 2016-02-03 | Hitachi-LG Data Storage, Inc. | Optical module and method of making the same |
| CN105319808A (en) * | 2014-08-01 | 2016-02-10 | 日立乐金光科技株式会社 | Optical module and method of making the same |
| JP2016035491A (en) * | 2014-08-01 | 2016-03-17 | 株式会社日立エルジーデータストレージ | Optical module and manufacturing method thereof |
| US10371369B2 (en) | 2014-08-01 | 2019-08-06 | Hitachi-Lg Data Storage, Inc. | Sealing of optical module with O-ring and liquid resin |
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