JPS58127474A - Silid state image pickup device - Google Patents
Silid state image pickup deviceInfo
- Publication number
- JPS58127474A JPS58127474A JP57008949A JP894982A JPS58127474A JP S58127474 A JPS58127474 A JP S58127474A JP 57008949 A JP57008949 A JP 57008949A JP 894982 A JP894982 A JP 894982A JP S58127474 A JPS58127474 A JP S58127474A
- Authority
- JP
- Japan
- Prior art keywords
- solid
- substrate
- ceramic substrate
- ceramic
- flat plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000919 ceramic Substances 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 229910000679 solder Inorganic materials 0.000 claims abstract description 21
- 238000007789 sealing Methods 0.000 claims abstract description 17
- 239000011521 glass Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 abstract description 7
- 238000005476 soldering Methods 0.000 abstract 1
- 238000004806 packaging method and process Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 6
- 229910000833 kovar Inorganic materials 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 239000007787 solid Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000003384 imaging method Methods 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910015363 Au—Sn Inorganic materials 0.000 description 1
- 229910001128 Sn alloy Inorganic materials 0.000 description 1
- 238000005275 alloying Methods 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 239000012466 permeate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
Abstract
Description
【発明の詳細な説明】
本発明は固体撮像製電、特に固体ｍｃＩ素子をパッケー
ジ内に高信項性でかつ低鳴格で収納配電可能にしたパッ
ケージング構造に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to solid-state imaging electronic manufacturing, and in particular to a packaging structure that enables a solid-state mcI device to be housed and distributed within a package with high signal reliability and low noise.
一般にＣＯＤやＭＯＳタイプ等の固体′ｇｋ偉素子は、
所要の特性を発揮しかつ信頼性確保のために外界雰囲気
から連断して保護することが必要である、また、固体を
儂素子は外部からの光情報を検知するものであるから、
光情報が固体撮像素子の受光部に正確に入射されなけれ
ばならない。In general, solid-state elements such as COD and MOS types are
In order to exhibit the required characteristics and ensure reliability, it is necessary to connect and protect the solid state from the external atmosphere.Also, since the solid state element detects optical information from the outside,
Optical information must be accurately incident on the light receiving section of the solid-state image sensor.
このような条件を情足させるためには、固体撮像素子に
第１図および第２図に要部祈面図で示すように無機材料
および有機材料を用いた気密シール方式のパッケージン
グ構造を有する固体撮像素子が沸案されている。すなわ
ち第１図において、断面が凹形状を有するセラミック基
板１とガラス製透明平板２とで囲まれた中空部３には、
固体撮像素子４．ボンディングワイヤ５およびポンディ
ングパッド６．７の智化、腐蝕を防止する窒素ガス等の
不活性ガスが充填されている。また、セラミック基板１
と透明平板２とは外界雰囲気から中空部３への腐蝕性ガ
スおよび水分等の侵入を防止する無機シール材８で完全
に気密シールされている。この場合、シール材８として
フリットガラスを用いてセラミック基板１と透明平板２
とを接着することができれば最も安価にシールすること
がで咎る。In order to satisfy these conditions, the solid-state image sensor has an airtight packaging structure using inorganic and organic materials, as shown in the diagrams of main parts in Figures 1 and 2. Solid-state image sensors are being proposed. That is, in FIG. 1, a hollow portion 3 surrounded by a ceramic substrate 1 having a concave cross section and a transparent flat plate 2 made of glass includes:
Solid-state image sensor 4. It is filled with an inert gas such as nitrogen gas to prevent the bonding wires 5 and bonding pads 6 and 7 from becoming stiff and corroding. In addition, ceramic substrate 1
and the transparent flat plate 2 are completely hermetically sealed with an inorganic sealing material 8 that prevents corrosive gas, moisture, etc. from entering the hollow portion 3 from the outside atmosphere. In this case, frit glass is used as the sealing material 8 to connect the ceramic substrate 1 and the transparent flat plate 2.
If you can glue it together, it will be the cheapest way to seal it.
しかしながら、固体撮像素子４は、命＊杓４％、ｍ箪の
カラーフィルタを有することから、通常約２００Ｃ以上
の高温度に耐えることができないため、シール時に約４
００ Ｃ’１度の高温度になるフリットガラスを用いて
セラミック基板１と透明平板２とを直接的に接着してシ
ールすることかで咎ない。However, since the solid-state image sensor 4 has a color filter that has a life of 4% and a size of m2, it cannot normally withstand high temperatures of about 200C or higher.
It is possible to directly adhere and seal the ceramic substrate 1 and the transparent flat plate 2 using frit glass that has a high temperature of 0.00 C'1 degree.
したがって第１図に示すような複雑な構造でシールされ
ている。すなわち、このシールエ穆は、次の通りである
。まず、セラミック基板１側は、固体８１嗜素子４をセ
ラミック基板１にダイボンディングする以前にセラミッ
ク基板１の周辺部にフリットガラス９ａを用いてセラミ
ックリングｌｅａを接着する。次に銀ろうｌｌａを用い
て上記セラミックリング１０＆に下部コバールリング１
２ｍを接着する。引酋続含上記コバールリング１２ｍの
表面にニッケルメッキ１３Ｆおよび金メッキ１４ｍを行
なう。Therefore, it is sealed with a complicated structure as shown in FIG. That is, this seal is as follows. First, on the ceramic substrate 1 side, before die bonding the solid state 81 and the bonding element 4 to the ceramic substrate 1, a ceramic ring lea is bonded to the periphery of the ceramic substrate 1 using frit glass 9a. Next, use silver solder lla to attach the lower Kovar ring 1 to the ceramic ring 10 &
Glue 2m. Nickel plating 13F and gold plating 14m are applied to the surface of the Kovar ring 12m including the pulling continuation.
一方、透明平板２側は、この透明平板２の周辺部分にフ
リットガラス９ｂを用いてセラミックリング１０ｂを接
着する。次に銀ろう１１ｂを用いて上記セラミックリン
グ１０ｂに上部コバールリング１２ｂを接着する。引き
続きこの上部コバールリング１２ｂの表面にニッケルメ
ッキ１３ｂおよび金メッキ１４ｂを行なう。そして、セ
ラミック基板１に固体撮儂素子４をダイボンディングし
、ポンディングパッド６．７間をボンディングワイヤ５
で接続した後、上記透明平板２上の上部コバールリング
１２ｂトセラミツク基板１上の下部コバールリンク１２
＆とをＡｕ −Ｓｎ またはＡｕ−８１などのろう材１
５でシールウェルド法により接着する。。On the other hand, on the transparent flat plate 2 side, a ceramic ring 10b is bonded to the peripheral portion of the transparent flat plate 2 using frit glass 9b. Next, the upper Kovar ring 12b is bonded to the ceramic ring 10b using silver solder 11b. Subsequently, nickel plating 13b and gold plating 14b are applied to the surface of this upper Kovar ring 12b. Then, the solid-state imaging device 4 is die-bonded to the ceramic substrate 1, and a bonding wire 5 is connected between the bonding pads 6 and 7.
After connecting the upper Kovar ring 12b on the transparent flat plate 2 and the lower Kovar link 12 on the ceramic substrate 1.
& and Au-Sn or brazing material 1 such as Au-81
At step 5, adhere by the seal weld method. .
このようなシールウェルド法によれば、シール部分のみ
が局部的に加熱されるので、固体撮鷹素子４の温度が約
２００ Ｃ以下となり、したがって固体撮儂素子４は特
性的に何ら問題を生じない。また完全な気密シールであ
るため、外界雰囲気から中空部３への腐蝕ガスや水分の
受入は全くなく、信頼性の高い固体撮儂装置を得ること
かで轡る。According to such a seal weld method, since only the sealed portion is locally heated, the temperature of the solid-state photographic element 4 becomes approximately 200 C or less, and therefore the solid-state photographic element 4 does not cause any problems in terms of its characteristics. do not have. Moreover, since it is a completely airtight seal, no corrosive gas or moisture is allowed to enter the hollow part 3 from the outside atmosphere, which makes it difficult to obtain a highly reliable solid-state imaging device.
しかしながら、上記構成による固体電像装置はシール部
分が極めて複雑であり、合計１３点と多種類の材料およ
び部品を使用することおよび工穐数が極めて多く、作業
工数がかかることから、パッケージングコストが極めて
高価となる欠点力１あった。However, the solid-state image device with the above configuration has an extremely complicated sealing part, which requires a total of 13 parts and many types of materials and parts, and requires an extremely large number of man-hours, resulting in low packaging costs. There was one drawback: it was extremely expensive.
一方、パッケージングコストが著しく安価な固体’１１
ｆ＃装置としては、第２図に示すような有機シール方式
が提案されている。この場合、セラミック基板１と透明
平板２とを有機接着剤１６で直接的に接着するので、シ
ールｒｅが極めて単純で材料も安いため、パッケージン
グコストが極めて安価となる利点がある。On the other hand, solid '11, which has a significantly lower packaging cost,
As an f# device, an organic seal system as shown in FIG. 2 has been proposed. In this case, since the ceramic substrate 1 and the transparent flat plate 2 are directly bonded with the organic adhesive 16, the seal re is extremely simple and the material is cheap, so there is an advantage that the packaging cost is extremely low.
しかしな力１ら、このような構成によると、有機接着剤
１６自体が腐蝕性ガスや水分を通しやすいため、気密性
が悪くなり、固体電像装置の信頼性全低下させるという
致命的な欠点があった。However, with such a configuration, the organic adhesive 16 itself easily permeates corrosive gas and moisture, resulting in poor airtightness and a fatal drawback of completely reducing the reliability of the solid-state electromagnetic device. was there.
このような欠点を改善するものとしては、第３図に要部
断面図で示すようにセラミック基板１と透明平板２との
シール…に、ガラスとセランツクとを容易に結合で専る
特殊半田（酸化物と強固な結合をもたらす合金元素をＰ
ｂ −Ｓｎ 合金に添加したもの）１Ｆを挿入し、超
音波エネルギーを付与ｌ〜て両者を接着する方法が提案
されている。To improve this drawback, as shown in the cross-sectional view of the main part in FIG. P is an alloying element that forms a strong bond with the oxide.
A method has been proposed in which 1F (added to a -Sn alloy) is inserted and the two are bonded by applying ultrasonic energy.
しかしながら上記構成によると、超音波エネルギーを付
与して両者をシールする際、同図に示すように特殊半田
１７が飛沫し、シール部以外の潤う問題があったにのよ
うなシール方式は、上述した有機シール方式と同様に構
造が極めて簡導で材料も安価なため、パッケージングコ
ストが極めて安価となる利点がある。しかじな力！ら、
上述したような特殊半田飛沫の飛散の問題があるため、
実用化ができないという欠点があった。However, according to the above configuration, when applying ultrasonic energy to seal the two, the special solder 17 is splashed as shown in the same figure, and there is a problem in that the parts other than the sealed part become wet. Like the organic seal method, the structure is extremely simple and the materials are inexpensive, so the packaging cost is extremely low. Real power! and others,
Due to the problem of scattering of special solder droplets as mentioned above,
The drawback was that it could not be put into practical use.
したがって本発明は、上記従来の欠点に鑑みてなされた
ものであり、その目的とするところは、高信頼性かつ低
価格のパッケージ構造を有する固体撮儂装置を提供する
ことにある。Therefore, the present invention has been made in view of the above-mentioned conventional drawbacks, and its object is to provide a solid-state photographic device having a highly reliable and low-cost package structure.
このような目的を達成するために本発明は、セラミック
基板と透明平板とのシール部分の少なくともキャビティ
内側は両者が相互に接触されかつ該シール部の外周辺部
に特殊半田を介在させて超音波エネルギーを付与して＠
鱗、固化させることによって低温度気密シールを可能に
したものである。以下図面を用いて本発明のＩＩ櫓例を
詳細に説明するう
＠４図は本発明による固体１像装置の一実施例を示す要
部断面構成図であり、前述の図と同記号は同一要素とな
るのでその説明は省略する。同図において、セラミック
基板１の上面と透明平板２とが接触するシール面のキャ
ビティー側に近接する部分には、このセラミック基板１
よりも外形形状が小さくかつ内形形状の等しい額縁状の
セラミック枠体１＆を積層し一体的に固着して配置され
、このセラミック枠体１ａの外周部分には特殊半田１Ｔ
を介在させ、超音波エネルギーを付与して融解し固化さ
せてセラミック基板１と透明平板２とＡＲＫ密シールさ
れている。この場合、特殊半田１Ｔによるシール条件は
、特殊半田：旭硝子製÷１４３（直径０．６１の糸半田
）、シール温度： １６５ｔ：’ 。In order to achieve such an object, the present invention provides a method in which at least the inside of the cavity of the sealed portion between the ceramic substrate and the transparent flat plate is in contact with each other, and a special solder is interposed on the outer periphery of the sealed portion to apply ultrasonic waves. Give energy @
By solidifying the scales, it is possible to create a low-temperature airtight seal. The II tower example of the present invention will be explained in detail below with reference to the drawings. Figure 4 is a cross-sectional configuration diagram of essential parts showing an embodiment of the solid-state single image device according to the present invention, and the same symbols as those in the previous figure are the same. Since it is an element, its explanation will be omitted. In the same figure, the ceramic substrate 1
A frame-shaped ceramic frame 1& having a smaller external shape and an equal internal shape is stacked and integrally fixed, and a special solder 1T is applied to the outer periphery of the ceramic frame 1a.
The ceramic substrate 1 and the transparent flat plate 2 are tightly sealed with the ARK by applying ultrasonic energy to melt and solidify the ceramic substrate 1 and the transparent flat plate 2. In this case, the sealing conditions using special solder 1T are as follows: special solder: manufactured by Asahi Glass ÷143 (thread solder with a diameter of 0.61), sealing temperature: 165t:'.
超音波見損周波数： ５９．５ＫＨｚ 、超音波発振出
カニ１０Ｗ、時閘：ｔｏ秒の条件で行なった。The test was carried out under the conditions of an ultrasonic failure frequency: 59.5 KHz, an ultrasonic oscillation output of 10 W, and a time delay of to seconds.
このような構成によれば、セラミック基板１のシール面
のキャビティ側に近接する部分にセラミック枠体１ａを
積層して一体的に設けたことによって、シール時のキャ
ビティ部分への特殊半田１Ｔの１散が皆無となり、低温
変で短時間の気壱シールがで勇た。そして、このように
製作した固体１像装置の信頼性試験を行なったところ、
従来の１雑構造の気密シール方式と同等の信頼性を何す
ることの１確フされた。また、パッケージングコストは
従来の気嬰シール方式に対して約１．／３に低減するこ
とかで舎た。According to such a configuration, since the ceramic frame 1a is laminated and integrally provided on a portion of the sealing surface of the ceramic substrate 1 close to the cavity side, 1T of special solder 1T is applied to the cavity portion during sealing. There was no scattering, and a short time seal appeared due to the temperature change. When we performed a reliability test on the solid-state single image device manufactured in this way, we found that
It has been ensured that it has the same reliability as the conventional hermetic seal system with a simple structure. In addition, the packaging cost is about 1.5% compared to the conventional QiYing seal method. I decided to reduce it to /3.
第５図は本発明による固体１像装置の池の実−列を示す
要部断面構成図であり、前述の図と同記号は同一要素と
なるのでその説明は省略する。同図において、第４図と
の異なる点は、セラミック基板１の上面と透明平板２と
が接触するシール面の外面側にはこのセラミック基板１
よりも内形形状が小さくかつ外形形状の等しい額縁状の
セラミック枠体１ｂを積層し一体的に固着して配置され
、上記セラミック枠体１ａとこのセラミック枠体１ｂと
で上記シール面上（実質的に凹部が形成されている。そ
して、この凹部内には特殊半田１Ｔを介在させ、超音波
エネルギーを付与して融解し同化させてセラミック基板
１と透明平板２とが気密シールされている。このような
構成においても前述と全く同様の効果が得られる、
なお、本発明は、上記実ＩＩＩｉｉｇＡＪにのみに限定
されること表く、本発明の要旨を逸脱しない範囲で種々
の変形を実崩し得ることは勿論である、例えば第６図に
示すものはセラミック基板１のシール面に前述したセラ
ミック枠体ｌａ、ｊｂからなる凹部を設け、一方これに
対向する透明平板２上にガラス枠体２ａを一体的に固着
配置した凸部を設けてこの両者を組合せ、この凸凹間に
特殊半田１７を介在させ、超音波エネ！レギーを付与し
て融解し、固化させてセラミック基板１と透明平板２と
が気密シールされている。また、第７図のものは第６図
と逆嘴成され、セラミック基板１のシール面中央部にセ
ラミック枠体１Ｃを一体的に固着配置した凸部を設け、
一方これに対向する透明平板２に凹部２ｂｔ−設けてこ
の両者を岨合せ、この凸凹間に特殊半田１Ｔを介在させ
て超音波エネルギーを付与して独解し、固化させてセラ
ミック基板１と透明平板２とが気密シールされている。FIG. 5 is a cross-sectional configuration diagram of essential parts showing the actual array of ponds in the solid-state single image device according to the present invention, and since the same symbols as in the previous figures represent the same elements, a description thereof will be omitted. The difference between this figure and FIG. 4 is that the outer surface of the sealing surface where the upper surface of the ceramic substrate 1 and the transparent flat plate 2 contact
Frame-shaped ceramic frames 1b having a smaller internal shape and an equal external shape are stacked and integrally fixed, and the ceramic frames 1a and 1b are arranged on the sealing surface (substantially A special solder 1T is interposed in this recess, and ultrasonic energy is applied to melt and assimilate the solder 1T, thereby airtightly sealing the ceramic substrate 1 and the transparent flat plate 2. Even in such a configuration, the same effect as described above can be obtained. Note that the present invention is limited only to the above-mentioned Example IIIiiigAJ, and various modifications may be made without departing from the gist of the present invention. For example, in the case shown in FIG. 6, a concave portion consisting of the ceramic frames la and jb described above is provided on the sealing surface of the ceramic substrate 1, and a glass frame body 2a is provided on the transparent flat plate 2 opposite thereto. A convex portion is provided in which the two are integrally fixed, and the two are combined. A special solder 17 is interposed between the convex and convex portions, and ultrasonic energy is applied to melt and solidify the ceramic substrate 1 and the transparent flat plate 2. In addition, the one shown in Fig. 7 is formed in the opposite direction to that shown in Fig. 6, and a convex part on which the ceramic frame 1C is integrally fixed is provided in the center of the sealing surface of the ceramic substrate 1.
On the other hand, a concave part 2bt is provided in the transparent flat plate 2 facing this, and the two are fitted together, and a special solder 1T is interposed between the concave and convex portions, and ultrasonic energy is applied to the solder, which is then solidified and bonded to the ceramic substrate 1 and the transparent plate. The flat plate 2 is hermetically sealed.
このような構成においても前述と全く同様の効果が得ら
れるとともに、凸凹部で特殊半田１７との接触面積が大
きくなるので、シール部分の密着性１巻着礒度等をさら
に広大させることがで断る。In such a configuration, the same effect as described above can be obtained, and since the contact area with the special solder 17 is increased in the uneven portion, it is possible to further increase the adhesion, one-turn adhesion, etc. of the seal portion. turn down.
なお、上記実施例においては、セラミック基板１と透明
平板２とのシール面に一岨の凸凹構造からなるシール講
壇を設けた場合について説明したが、本発明はこれに限
定されるものではなく、複数組の凸凹ＷＲ造および溝構
造からなるシール構・竜を設けても前述と同様の効果が
得られることは勿論である。In addition, in the above embodiment, a case has been described in which a sealing platform having a concave-convex structure of one slope is provided on the sealing surface between the ceramic substrate 1 and the transparent flat plate 2, but the present invention is not limited to this. Of course, the same effect as described above can be obtained even if a plurality of sets of seal structures and dragons each having a convex-concave WR structure and a groove structure are provided.
以上説明したように本発明による気密シール構造によれ
ば、外界雰囲気からの気体や水分の受入がなく、高気密
性の固体４儂装置が得られる。また、気密シールＩｌ造
が簡単で構成部品および材料の使用点数が少なく、工数
も少ないので、パッケージング関係の故障が極少となり
、信頼性が高く、かつパッケージングコストが極めて安
価な固体１像装置が得られるという極めて優れ九効果を
有する。As explained above, according to the airtight seal structure according to the present invention, a highly airtight solid-state four-member device is obtained without accepting gas or moisture from the external atmosphere. In addition, the air-tight seal structure is simple, the number of components and materials used is small, and the number of man-hours is small, so packaging-related failures are minimized, and a solid-state image device with high reliability and extremely low packaging cost is produced. It has nine extremely excellent effects.
第１図ないし第３図は従東の固体１儂装置の一例を示す
要部断面構成図、第４図は本発明による固体１儂装置の
一実″＠列を示す要部断面構成図、第５図ないし第７図
は本発明による固体撮峰装置の１川の実権例を示す要部
断面構成図である。
１・・・・セラミック基板、１ｍ＋１ｂｓ１ｅ・・・・
セラミック枠体、２・・・・透明平板、２ａ・・・・ガ
ラス枠体、２ｂ・・・・凹部、４−・・・固体１像素子
、１７・・・・特殊半田。
第１図
第２図
第３図
第６図1 to 3 are cross-sectional configuration diagrams of essential parts showing an example of a solid-state one-man device by Juto; FIG. 4 is a cross-sectional diagram of essential parts showing an example of a solid-state one-man device according to the present invention; 5 to 7 are cross-sectional configuration diagrams of essential parts showing one practical example of the solid-state peak imaging device according to the present invention. 1...Ceramic substrate, 1m+1bs1e...
Ceramic frame body, 2... Transparent flat plate, 2a... Glass frame body, 2b... Concave portion, 4-... Solid state 1 image element, 17... Special solder. Figure 1 Figure 2 Figure 3 Figure 6
Claims (1)
透明ガラス平板とを気密シールしで′なる固体庸儂装置
において、前記セラミック基板と透明ガラス平板との周
面シール部分の少なくともキャビティ側は相互に接法さ
すかつ該キャビティ側を吟〈シール部分の相互間に＃殊
半田を午在させ超音波エネルギーで融解し固着させて気
密シールしたことを特許とする固体１儂装置。In a solid-state device in which an open end of a ceramic substrate in which a solid-state image pickup device is housed and a transparent glass flat plate are hermetically sealed, at least the cavity side of the circumferentially sealed portion of the ceramic substrate and the transparent glass flat plate is mutually sealed. A patented solid-state one-man device in which a special solder is placed between the sealing parts and melted and fixed by ultrasonic energy to form an airtight seal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57008949A JPS58127474A (en) | 1982-01-25 | 1982-01-25 | Silid state image pickup device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57008949A JPS58127474A (en) | 1982-01-25 | 1982-01-25 | Silid state image pickup device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58127474A true JPS58127474A (en) | 1983-07-29 |
Family
ID=11706918
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57008949A Pending JPS58127474A (en) | 1982-01-25 | 1982-01-25 | Silid state image pickup device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58127474A (en) |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5323058A (en) * | 1992-02-12 | 1994-06-21 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device including package with improved base-to-cop seal |
| JP2002231919A (en) * | 2001-02-06 | 2002-08-16 | Olympus Optical Co Ltd | Solid-state image pickup device and its manufacturing method |
| EP1513200A3 (en) * | 2003-09-03 | 2006-05-24 | Matsushita Electric Industrial Co., Ltd. | Solid-state imaging device and method for manufacturing the same |
| JP2008252127A (en) * | 2008-06-30 | 2008-10-16 | Fujifilm Corp | Solid-state imaging device and method of manufacturing the same |
| JP2015146380A (en) * | 2014-02-03 | 2015-08-13 | 株式会社ニコン | Imaging unit and imaging device |
| JP2018014767A (en) * | 2017-10-25 | 2018-01-25 | 株式会社ニコン | Imaging unit and imaging device |
| WO2019146245A1 (en) * | 2018-01-26 | 2019-08-01 | ソニーセミコンダクタソリューションズ株式会社 | Semiconductor device, image capture device, and semiconductor device manufacturing method |
| WO2019159858A1 (en) * | 2018-02-13 | 2019-08-22 | 田中貴金属工業株式会社 | Sealing lid formed from translucent material |
-
1982
- 1982-01-25 JP JP57008949A patent/JPS58127474A/en active Pending
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5323058A (en) * | 1992-02-12 | 1994-06-21 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor device including package with improved base-to-cop seal |
| JP2002231919A (en) * | 2001-02-06 | 2002-08-16 | Olympus Optical Co Ltd | Solid-state image pickup device and its manufacturing method |
| US7691678B2 (en) | 2003-09-03 | 2010-04-06 | Panasonic Corporation | Solid-state imaging device and method for manufacturing the same |
| US7378748B2 (en) | 2003-09-03 | 2008-05-27 | Matsushita Electric Industrial Co., Ltd. | Solid-state imaging device and method for manufacturing the same |
| CN100433343C (en) * | 2003-09-03 | 2008-11-12 | 松下电器产业株式会社 | Solid-state imaging device and method for manufacturing the same |
| EP1513200A3 (en) * | 2003-09-03 | 2006-05-24 | Matsushita Electric Industrial Co., Ltd. | Solid-state imaging device and method for manufacturing the same |
| JP2008252127A (en) * | 2008-06-30 | 2008-10-16 | Fujifilm Corp | Solid-state imaging device and method of manufacturing the same |
| JP2015146380A (en) * | 2014-02-03 | 2015-08-13 | 株式会社ニコン | Imaging unit and imaging device |
| JP2018014767A (en) * | 2017-10-25 | 2018-01-25 | 株式会社ニコン | Imaging unit and imaging device |
| WO2019146245A1 (en) * | 2018-01-26 | 2019-08-01 | ソニーセミコンダクタソリューションズ株式会社 | Semiconductor device, image capture device, and semiconductor device manufacturing method |
| WO2019159858A1 (en) * | 2018-02-13 | 2019-08-22 | 田中貴金属工業株式会社 | Sealing lid formed from translucent material |
| CN111712912A (en) * | 2018-02-13 | 2020-09-25 | 田中贵金属工业株式会社 | Sealing cap made of translucent material |
| JPWO2019159858A1 (en) * | 2018-02-13 | 2021-01-28 | 田中貴金属工業株式会社 | Sealing lid made of translucent material |
| CN111712912B (en) * | 2018-02-13 | 2023-12-22 | 田中贵金属工业株式会社 | Sealing cap made of light-transmitting material |
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