JPH0786544A - Ccd device - Google Patents
Ccd deviceInfo
- Publication number
- JPH0786544A JPH0786544A JP5250994A JP25099493A JPH0786544A JP H0786544 A JPH0786544 A JP H0786544A JP 5250994 A JP5250994 A JP 5250994A JP 25099493 A JP25099493 A JP 25099493A JP H0786544 A JPH0786544 A JP H0786544A
- Authority
- JP
- Japan
- Prior art keywords
- glass substrate
- ccd chip
- ccd
- light receiving
- anisotropic conductive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 46
- 239000011521 glass Substances 0.000 claims abstract description 41
- 239000000853 adhesive Substances 0.000 claims abstract description 35
- 230000001070 adhesive effect Effects 0.000 claims abstract description 35
- 238000005192 partition Methods 0.000 claims description 8
- 239000002245 particle Substances 0.000 abstract description 3
- 229920005992 thermoplastic resin Polymers 0.000 abstract description 2
- 229920001187 thermosetting polymer Polymers 0.000 abstract description 2
- 239000000919 ceramic Substances 0.000 description 13
- 229920005989 resin Polymers 0.000 description 5
- 239000011347 resin Substances 0.000 description 5
- 239000003566 sealing material Substances 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
- H01L2924/07811—Extrinsic, i.e. with electrical conductive fillers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Wire Bonding (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】この発明はＣＣＤ素子に関する。FIELD OF THE INVENTION The present invention relates to a CCD device.
【０００２】[0002]
【従来の技術】図３（Ａ）および（Ｂ）は従来のＣＣＤ
素子の一例を示したものである。このＣＣＤ素子は正方
形状のセラミック基板１を備えている。セラミック基板
１の上面中央部には正方形状の凹部２が形成され、凹部
２の左右両側におけるセラミック基板１の上面には配線
パターン３が形成されている。凹部２内には正方形状の
ＣＣＤチップ４が接着剤（図示せず）によって接着され
て配置されている。ＣＣＤチップ４の上面の左右両側に
設けられた入出力端子パッド５は、ワイヤボンディング
により、Ａｕ等からなるワイヤ６を介してセラミック基
板１上の左右の配線パターン３の内端部に接続されてい
る。配線パターン３の外端部には外部端子７が接続され
ている。セラミック基板１の上面周囲には枠状のセラミ
ック側壁８が接着剤（図示せず）を介して接着されてい
る。セラミック側壁８の上面にはガラス保護板９が接着
剤（図示せず）を介して接着されている。そして、ガラ
ス保護板９を透過した光がＣＣＤチップ４の上面の受光
領域１０に照射されると、この照射光に応じた光信号が
電気信号に変換されるようになっている。2. Description of the Related Art FIGS. 3A and 3B show a conventional CCD.
It is an example of an element. This CCD element has a square ceramic substrate 1. A square recess 2 is formed in the center of the upper surface of the ceramic substrate 1, and wiring patterns 3 are formed on the upper surface of the ceramic substrate 1 on both the left and right sides of the recess 2. In the concave portion 2, a square CCD chip 4 is arranged by being bonded with an adhesive (not shown). The input / output terminal pads 5 provided on the left and right sides of the upper surface of the CCD chip 4 are connected to the inner end portions of the left and right wiring patterns 3 on the ceramic substrate 1 through wires 6 made of Au or the like by wire bonding. There is. External terminals 7 are connected to the outer ends of the wiring patterns 3. A frame-shaped ceramic side wall 8 is adhered to the periphery of the upper surface of the ceramic substrate 1 via an adhesive (not shown). A glass protective plate 9 is adhered to the upper surface of the ceramic side wall 8 with an adhesive (not shown). Then, when the light transmitted through the glass protection plate 9 is applied to the light receiving area 10 on the upper surface of the CCD chip 4, an optical signal corresponding to the applied light is converted into an electric signal.
【０００３】[0003]
【発明が解決しようとする課題】しかしながら、従来の
このようなＣＣＤ素子では、セラミック基板１上に設け
たＣＣＤチップ４の上面の受光領域１０等を保護するた
めに、セラミック基板１上にセラミック側壁８を介して
ガラス保護板９を設けているので、外部端子７を除いた
全体の厚さが厚くなり、またＣＣＤチップ４の左右両側
にワイヤ６を配置し、これらワイヤ６の外側にセラミッ
ク側壁８を配置し、セラミック側壁８の左右両側に外部
端子７を配置しているので、占有面積も大きいという問
題があった。一例として、ＣＣＤチップ４の大きさが６
ｍｍ角〜８ｍｍ角で厚さが０．５ｍｍの場合、外部端子
７を除いた全体の大きさが２０ｍｍ角〜２５ｍｍ角程度
で厚さが５ｍｍ程度とかなり大型で厚くなってしまう。
また、ＣＣＤチップ４の入出力端子パッド５とセラミッ
ク基板１の配線パターン３とを接続するためのワイヤボ
ンディングはワイヤ６を１本ずつ接合するものであるの
で、この工程に要する時間が長く、ひいてはコストアッ
プになるという問題があった。この発明の目的は、小型
で薄くすることができ、またコストの低減を図ることの
できるＣＣＤ素子を提供することにある。However, in such a conventional CCD device, in order to protect the light receiving region 10 and the like on the upper surface of the CCD chip 4 provided on the ceramic substrate 1, the ceramic side wall is provided on the ceramic substrate 1. Since the glass protection plate 9 is provided through the external terminals 8, the entire thickness except the external terminals 7 becomes thicker, and the wires 6 are arranged on both the left and right sides of the CCD chip 4, and the ceramic side wall is provided outside the wires 6. 8 is arranged and the external terminals 7 are arranged on both the left and right sides of the ceramic side wall 8, there is a problem that the occupied area is large. As an example, the size of the CCD chip 4 is 6
When the size is 0.5 mm to 8 mm and the thickness is 0.5 mm, the entire size excluding the external terminals 7 is about 20 mm to 25 mm and the thickness is about 5 mm, which is considerably large and thick.
Further, since the wire bonding for connecting the input / output terminal pad 5 of the CCD chip 4 and the wiring pattern 3 of the ceramic substrate 1 is to bond the wires 6 one by one, the time required for this step is long, and consequently There was the problem of increased costs. An object of the present invention is to provide a CCD device which can be made small and thin and can be reduced in cost.
【０００４】[0004]
【課題を解決するための手段】請求項１記載の発明は、
上面に電極パッドおよび該電極パッドに接続された配線
パターンが形成されたガラス基板と、下面に設けられた
入出力端子パッドに形成されたバンプを含む接合部分を
前記ガラス基板の前記電極パッドを含む接合部分に異方
導電性接着剤を介して接合されたＣＣＤチップとを具備
したものである。請求項２記載の発明は、請求項１記載
の発明において、前記ガラス基板の前記電極パッドを含
む接合部分と前記ＣＣＤチップの下面の受光領域に対応
する部分との間における前記ガラス基板の上面に絶縁性
仕切壁を設けたものである。請求項３記載の発明は、請
求項１記載の発明において、少なくとも前記ＣＣＤチッ
プの下面の受光領域に対応する部分の前記ガラス基板の
上面に絶縁性透明膜を設けたものである。The invention according to claim 1 is
A glass substrate on which an electrode pad and a wiring pattern connected to the electrode pad are formed on the upper surface, and a bonding portion including bumps formed on the input / output terminal pad provided on the lower surface includes the electrode pad of the glass substrate. A CCD chip bonded to the bonding portion via an anisotropic conductive adhesive is provided. According to a second aspect of the invention, in the first aspect of the invention, the upper surface of the glass substrate is provided between a bonding portion of the glass substrate including the electrode pad and a portion of the lower surface of the CCD chip corresponding to a light receiving region. It is provided with an insulating partition wall. According to a third aspect of the invention, in the first aspect of the invention, an insulating transparent film is provided on at least a portion of the lower surface of the CCD chip corresponding to the light receiving region on the upper surface of the glass substrate.
【０００５】[0005]
【作用】請求項１記載の発明によれば、ガラス基板を透
過した光をＣＣＤチップの下面の受光領域に照射させる
ことができるので、ガラス基板にＣＣＤチップの下面の
受光領域を保護するための機能を兼ねさせることがで
き、このため基本的にはＣＣＤチップをガラス基板上に
異方導電性接着剤を介して設けた構造とするだけでよ
く、したがって小型で薄くすることができる。また、異
方導電性接着剤を用いた接合は接続端子数に関係なく一
度に行うことができるので、この工程に要する時間を短
縮することができ、ひいてはコストの低減を図ることが
できる。この場合、請求項２または３記載の発明のよう
にすると、異方導電性接着剤を用いて接合する際に異方
導電性接着剤中の絶縁性接着剤が流動しても、この流動
した絶縁性接着剤がＣＣＤチップの下面の受光領域に対
応する部分に流れ込むのを絶縁性仕切壁または絶縁性透
明膜によって防止することができる。According to the first aspect of the present invention, since the light transmitted through the glass substrate can be applied to the light receiving area on the lower surface of the CCD chip, the glass substrate can protect the light receiving area on the lower surface of the CCD chip. Since it can also have a function, it is basically necessary only to have a structure in which a CCD chip is provided on a glass substrate via an anisotropic conductive adhesive, and therefore it can be made small and thin. In addition, since the joining using the anisotropic conductive adhesive can be performed at one time regardless of the number of connection terminals, the time required for this step can be shortened and the cost can be reduced. In this case, according to the invention of claim 2 or 3, even if the insulating adhesive in the anisotropic conductive adhesive flows when joining using the anisotropic conductive adhesive, this flow The insulating partition wall or the insulating transparent film can prevent the insulating adhesive from flowing into a portion corresponding to the light receiving area on the lower surface of the CCD chip.
【０００６】[0006]
【実施例】図１（Ａ）〜（Ｄ）はこの発明の一実施例に
おけるＣＣＤ素子を示したものである。このＣＣＤ素子
は、基本的には、ＣＣＤチップ１１をガラス基板２１上
に異方導電性接着剤３１を介して設けた構造となってい
る。このうちＣＣＤチップ１１は正方形状であって、そ
の下面の図１（Ａ）における左右両側に８個ずつ設けら
れたＡｌからなる入出力端子パッド（図示せず）の下面
にはＡｕからなる高さ１０μｍ程度のバンプ１２が形成
されている。ガラス基板２１は長方形状であって、その
上面の図１（Ａ）における左側および左右方向ほぼ中央
部には、ＣＣＤチップ１１のバンプ１２に対応して、電
極パッド２２が８個ずつ形成されている。また、詳細に
は図示していないが、ガラス基板２１の上面には１６本
の配線パターン２３が形成されている。１６本の配線パ
ターン２３の一端部はガラス基板２１の上面の図１
（Ａ）における右側に集められ、他端部は対応する電極
パッド２２に接続されている。電極パッド２２および配
線パターン２３をＣｒ、Ａｌ、Ｍｏ、Ａｕ等の不透明な
金属によって形成する場合には、図１（Ａ）における左
側の８個の電極パッド２２に接続される配線パターン２
３については、ＣＣＤチップ１１の下面の受光領域１３
に対応する部分を避けて引き回す。ＩＴＯ等の透明な金
属で形成する場合には、そのような必要はない。さら
に、図１（Ａ）における左右の電極パッド２２の間であ
ってＣＣＤチップ１１の下面の受光領域１３に対応する
部分の周囲におけるガラス基板２１の上面には、樹脂材
料を印刷すること等により、正方形状の枠体からなる高
さ１０μｍ程度の絶縁性仕切壁２４が設けられている。
異方導電性接着剤３１は、熱硬化性樹脂または熱可塑性
樹脂からなる絶縁性接着剤３２中に導電性粒子３３を混
入したものからなっている。1 (A) to 1 (D) show a CCD device according to an embodiment of the present invention. This CCD element basically has a structure in which a CCD chip 11 is provided on a glass substrate 21 with an anisotropic conductive adhesive 31 interposed therebetween. Of these, the CCD chip 11 has a square shape, and the lower surface of eight input / output terminal pads (not shown) made of Al provided on the left and right sides in FIG. A bump 12 having a size of about 10 μm is formed. The glass substrate 21 has a rectangular shape, and eight electrode pads 22 are formed on the upper surface of the glass substrate 21 on the left side and the substantially central portion in the left-right direction in FIG. 1A corresponding to the bumps 12 of the CCD chip 11. There is. Although not shown in detail, 16 wiring patterns 23 are formed on the upper surface of the glass substrate 21. One end of the 16 wiring patterns 23 is on the upper surface of the glass substrate 21 as shown in FIG.
Collected on the right side in (A), the other end is connected to the corresponding electrode pad 22. When the electrode pad 22 and the wiring pattern 23 are formed of an opaque metal such as Cr, Al, Mo, Au, etc., the wiring pattern 2 connected to the eight electrode pads 22 on the left side in FIG.
For 3, the light receiving area 13 on the lower surface of the CCD chip 11
Route around avoiding the part corresponding to. If it is made of a transparent metal such as ITO, this is not necessary. Further, by printing a resin material or the like on the upper surface of the glass substrate 21 between the left and right electrode pads 22 in FIG. 1A and around the portion corresponding to the light receiving region 13 on the lower surface of the CCD chip 11, An insulating partition wall 24 having a height of about 10 μm and including a square frame body is provided.
The anisotropic conductive adhesive 31 is formed by mixing conductive particles 33 in an insulating adhesive 32 made of a thermosetting resin or a thermoplastic resin.
【０００７】そして、ＣＣＤチップ１１のバンプ１２を
含む接合部分はガラス基板２１の電極パッド２２を含む
接合部分に異方導電性接着剤３１を介して接合されてい
る。すなわち、熱圧着により絶縁性接着剤３２を軟化さ
せ、この軟化した絶縁性接着剤３２の一部が流動して逃
げることにより、導電性粒子３３の一部がバンプ１２と
電極パッド２２とに共に接触し、これによりバンプ１２
と電極パッド２２とが互いに導電接続されている。ま
た、一度軟化した絶縁性接着剤３２が硬化することによ
り、ＣＣＤチップ１１のバンプ１２を含む接合部分がガ
ラス基板２１の電極パッド２２を含む接合部分に接着さ
れている。この場合、図１（Ｂ）に示すように、流動し
た絶縁性接着剤３２がＣＣＤチップ１１の下面の受光領
域１３に対応する部分に流れ込もうとしても、絶縁性仕
切壁２４によって防止される。また、このＣＣＤ素子で
は、耐湿性を持たせる等のために、ＣＣＤチップ１１の
周囲におけるガラス基板２１上に樹脂からなる封止材４
１が塗布や印刷等により設けられている。この場合、図
１（Ｄ）に示すように、塗布または印刷直後の流動性を
有する封止材４１がＣＣＤチップ１１の下面の受光領域
１３に対応する部分に流れ込もうとしても、絶縁性仕切
壁２４によって防止される。そして、このＣＣＤ素子で
は、ガラス基板２１を透過した光がＣＣＤチップ１１の
下面の受光領域１３に照射されると、この照射光に応じ
た光信号が電気信号に変換されることになる。The joint portion including the bump 12 of the CCD chip 11 is joined to the joint portion including the electrode pad 22 of the glass substrate 21 via the anisotropic conductive adhesive 31. That is, the insulating adhesive 32 is softened by thermocompression bonding, and a part of the softened insulating adhesive 32 flows and escapes, so that a part of the conductive particles 33 is applied to both the bump 12 and the electrode pad 22. Contact, which results in bump 12
And the electrode pad 22 are conductively connected to each other. Further, the once softened insulating adhesive 32 is cured, so that the bonding portion of the CCD chip 11 including the bump 12 is bonded to the bonding portion of the glass substrate 21 including the electrode pad 22. In this case, as shown in FIG. 1 (B), even if the flowing insulating adhesive 32 tries to flow into a portion corresponding to the light receiving region 13 on the lower surface of the CCD chip 11, the insulating partition wall 24 prevents it. . Further, in this CCD element, the sealing material 4 made of resin is provided on the glass substrate 21 around the CCD chip 11 in order to have moisture resistance.
1 is provided by coating or printing. In this case, as shown in FIG. 1D, even if the fluid sealing material 41 immediately after coating or printing tries to flow into the portion corresponding to the light receiving region 13 on the lower surface of the CCD chip 11, the insulating partitioning is performed. Prevented by wall 24. Then, in this CCD element, when the light transmitted through the glass substrate 21 is applied to the light receiving region 13 on the lower surface of the CCD chip 11, an optical signal corresponding to the applied light is converted into an electric signal.
【０００８】このように、このＣＣＤ素子では、ガラス
基板２１を透過した光をＣＣＤチップ１１の下面の受光
領域１３に照射させることができるので、ガラス基板２
１にＣＣＤチップ１１の下面の受光領域１３を保護する
ための機能を兼ねさせることができ、このため基本的に
はＣＣＤチップ１１をガラス基板２１上に異方導電性接
着剤３１を介して設けた構造とするだけでよく、したが
って小型で薄くすることができる。ちなみに、ＣＣＤチ
ップ１１の大きさが６ｍｍ角〜８ｍｍ角で厚さが０．５
ｍｍの場合、ガラス基板２１の長辺方向の長さを１０ｍ
ｍ〜１５ｍｍ程度で全体の厚さを２ｍｍ程度とかなり小
型で薄くすることができる。また、異方導電性接着剤３
１を用いた接合は接続端子数に関係なく一度に行うこと
ができるので、この工程に要する時間を短縮することが
でき、ひいてはコストの低減を図ることができる。As described above, in this CCD element, since the light transmitted through the glass substrate 21 can be applied to the light receiving region 13 on the lower surface of the CCD chip 11, the glass substrate 2
1 can also have the function of protecting the light receiving region 13 on the lower surface of the CCD chip 11, and therefore basically the CCD chip 11 is provided on the glass substrate 21 via the anisotropic conductive adhesive 31. It is only required to have a different structure, and thus can be made small and thin. By the way, the CCD chip 11 has a size of 6 to 8 mm square and a thickness of 0.5.
In the case of mm, the length of the glass substrate 21 in the long side direction is 10 m.
When the thickness is about m to 15 mm, the total thickness is about 2 mm, which is quite small and thin. Also, anisotropic conductive adhesive 3
Since the joining using 1 can be performed at one time regardless of the number of connection terminals, the time required for this step can be shortened and the cost can be reduced.
【０００９】なお、上記実施例では、ＣＣＤチップ１１
の下面の受光領域１３に対応する部分の周囲におけるガ
ラス基板２１の上面に正方形状の枠体からなる絶縁性仕
切壁２４を設けているが、これの代わりに、図２（Ａ）
〜（Ｃ）に示すように、ＣＣＤチップ１１の下面の受光
領域１３およびその周囲に対応する部分のガラス基板２
１の上面に、透明な樹脂材料や透明な樹脂フィルム等か
らなる絶縁性透明膜４２を設けてもよい。この場合も、
絶縁性透明膜４２によって、絶縁性接着剤３２および封
止材４１がＣＣＤチップ１１の下面の受光領域１３に対
応する部分に流れ込もうとするのを防止することができ
る。In the above embodiment, the CCD chip 11
The insulating partition wall 24 made of a square frame is provided on the upper surface of the glass substrate 21 around the portion corresponding to the light receiving area 13 on the lower surface of FIG.
As shown in (C) to (C), the glass substrate 2 of the portion corresponding to the light receiving region 13 on the lower surface of the CCD chip 11 and its periphery.
An insulating transparent film 42 made of a transparent resin material, a transparent resin film, or the like may be provided on the upper surface of 1. Also in this case,
The insulative transparent film 42 can prevent the insulative adhesive 32 and the sealing material 41 from flowing into a portion corresponding to the light receiving region 13 on the lower surface of the CCD chip 11.
【００１０】[0010]
【発明の効果】以上説明したように、請求項１記載の発
明によれば、ガラス基板にＣＣＤチップの下面の受光領
域を保護するための機能を兼ねさせることができるの
で、基本的にはＣＣＤチップをガラス基板上に異方導電
性接着剤を介して設けた構造とするだけでよく、したが
って小型で薄くすることができる。また、異方導電性接
着剤を用いた接合は接続端子数に関係なく一度に行うこ
とができるので、この工程に要する時間を短縮すること
ができ、ひいてはコストの低減を図ることができる。ま
た、請求項２または３記載の発明によれば、異方導電性
接着剤を用いて接合する際に異方導電性接着剤中の絶縁
性接着剤が流動しても、この流動した絶縁性接着剤がＣ
ＣＤチップの下面の受光領域に対応する部分に流れ込む
のを絶縁性仕切壁または絶縁性透明膜によって防止する
ことができる。As described above, according to the first aspect of the present invention, since the glass substrate can also have the function of protecting the light receiving area on the lower surface of the CCD chip, the CCD is basically used. It suffices that the chip is provided on the glass substrate via the anisotropic conductive adhesive, and therefore the chip can be made small and thin. In addition, since the joining using the anisotropic conductive adhesive can be performed at one time regardless of the number of connection terminals, the time required for this step can be shortened and the cost can be reduced. Further, according to the invention of claim 2 or 3, even when the insulating adhesive in the anisotropic conductive adhesive flows when joining using the anisotropic conductive adhesive, the flowing insulating property Adhesive is C
The insulating partition wall or the insulating transparent film can prevent the lower surface of the CD chip from flowing into a portion corresponding to the light receiving region.
【図１】（Ａ）はこの発明の一実施例におけるＣＣＤ素
子の平面図、（Ｂ）は（Ａ）図のＢ−Ｂ線に沿う断面
図、（Ｃ）は（Ａ）図のＣ−Ｃ線に沿う断面図、（Ｄ）
は（Ａ）図のＤ−Ｄ線に沿う断面図。1A is a plan view of a CCD device according to an embodiment of the present invention, FIG. 1B is a sectional view taken along line BB in FIG. 1A, and FIG. Sectional view along line C, (D)
FIG. 3A is a cross-sectional view taken along the line D-D in FIG.
【図２】（Ａ）はこの発明の他の実施例におけるＣＣＤ
素子の平面図、（Ｂ）は（Ａ）図のＢ−Ｂ線に沿う断面
図、（Ｃ）は（Ａ）図のＣ−Ｃ線に沿う断面図。FIG. 2A is a CCD in another embodiment of the present invention.
The top view of an element, (B) is sectional drawing which follows the BB line of (A) figure, (C) is sectional drawing which follows the CC line of (A) figure.
【図３】（Ａ）は従来のＣＣＤ素子の一部を切り欠いた
平面図、（Ｂ）は（Ａ）図のＢ−Ｂ線に沿う断面図。3A is a plan view in which a part of a conventional CCD element is cut away, and FIG. 3B is a cross-sectional view taken along the line BB in FIG. 3A.
１１ ＣＣＤチップ １２ バンプ １３ 受光領域 ２１ ガラス基板 ２２ 電極パッド ２３ 配線パターン ２４ 絶縁性仕切壁 ３１ 異方導電性接着剤 11 CCD Chip 12 Bump 13 Light-Receiving Area 21 Glass Substrate 22 Electrode Pad 23 Wiring Pattern 24 Insulating Partition Wall 31 Anisotropic Conductive Adhesive
Claims (3)
接続された配線パターンが形成されたガラス基板と、 下面に設けられた入出力端子パッドに形成されたバンプ
を含む接合部分を前記ガラス基板の前記電極パッドを含
む接合部分に異方導電性接着剤を介して接合されたＣＣ
Ｄチップと、 を具備してなることを特徴とするＣＣＤ素子。1. A glass substrate having an electrode pad and a wiring pattern connected to the electrode pad formed on an upper surface thereof, and a bonding portion including a bump formed on an input / output terminal pad provided on a lower surface of the glass substrate. CC bonded to a bonding portion including the electrode pad via an anisotropic conductive adhesive
A CCD device characterized by comprising a D chip.
接合部分と前記ＣＣＤチップの下面の受光領域に対応す
る部分との間における前記ガラス基板の上面に絶縁性仕
切壁を設けたことを特徴とする請求項１記載のＣＣＤ素
子。2. An insulating partition wall is provided on the upper surface of the glass substrate between a bonding portion of the glass substrate including the electrode pad and a portion of the lower surface of the CCD chip corresponding to the light receiving region. The CCD device according to claim 1, wherein
光領域に対応する部分の前記ガラス基板の上面に絶縁性
透明膜を設けたことを特徴とする請求項１記載のＣＣＤ
素子。3. The CCD according to claim 1, wherein an insulating transparent film is provided on at least a portion of the lower surface of the CCD chip corresponding to the light receiving region on the upper surface of the glass substrate.
element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5250994A JPH0786544A (en) | 1993-09-14 | 1993-09-14 | Ccd device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP5250994A JPH0786544A (en) | 1993-09-14 | 1993-09-14 | Ccd device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0786544A true JPH0786544A (en) | 1995-03-31 |
Family
ID=17216081
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP5250994A Pending JPH0786544A (en) | 1993-09-14 | 1993-09-14 | Ccd device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0786544A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6467139B1 (en) | 1998-08-03 | 2002-10-22 | Nec Corporation | Mounting structure and mounting method for surface acoustic wave element |
| KR100406810B1 (en) * | 2000-04-10 | 2003-11-21 | 미쓰비시덴키 가부시키가이샤 | Imaging Device and Portable Phone |
| JP2007019563A (en) * | 2001-06-15 | 2007-01-25 | Ricoh Co Ltd | Semiconductor device, image reading unit and image forming apparatus |
| EP1981084A2 (en) | 2003-12-18 | 2008-10-15 | Matsushita Electric Industrial Co., Ltd. | Solid-state imaging device, its production method, camera with the solid-state imaging device and light-receiving chip |
| JP2009135401A (en) * | 2007-10-30 | 2009-06-18 | Panasonic Corp | Optical device and method of manufacturing the same |
-
1993
- 1993-09-14 JP JP5250994A patent/JPH0786544A/en active Pending
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6467139B1 (en) | 1998-08-03 | 2002-10-22 | Nec Corporation | Mounting structure and mounting method for surface acoustic wave element |
| KR100406810B1 (en) * | 2000-04-10 | 2003-11-21 | 미쓰비시덴키 가부시키가이샤 | Imaging Device and Portable Phone |
| JP2007019563A (en) * | 2001-06-15 | 2007-01-25 | Ricoh Co Ltd | Semiconductor device, image reading unit and image forming apparatus |
| EP1981084A2 (en) | 2003-12-18 | 2008-10-15 | Matsushita Electric Industrial Co., Ltd. | Solid-state imaging device, its production method, camera with the solid-state imaging device and light-receiving chip |
| US7859586B2 (en) | 2003-12-18 | 2010-12-28 | Panasonic Corporation | Solid-state imaging device, its production method, camera with the solid-state imaging device, and light receiving chip |
| US8319871B2 (en) | 2003-12-18 | 2012-11-27 | Panasonic Corporation | Solid-state imaging device, its production method, camera with the solid-state imaging device, and light receiving chip |
| JP2009135401A (en) * | 2007-10-30 | 2009-06-18 | Panasonic Corp | Optical device and method of manufacturing the same |
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