JP2003060114A - Semiconductor device and solid-state image pickup device - Google Patents
Semiconductor device and solid-state image pickup deviceInfo
- Publication number
- JP2003060114A JP2003060114A JP2001248335A JP2001248335A JP2003060114A JP 2003060114 A JP2003060114 A JP 2003060114A JP 2001248335 A JP2001248335 A JP 2001248335A JP 2001248335 A JP2001248335 A JP 2001248335A JP 2003060114 A JP2003060114 A JP 2003060114A
- Authority
- JP
- Japan
- Prior art keywords
- solid
- substrate
- conductive paste
- imaging device
- state imaging
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
Landscapes
- Solid State Image Pick-Up Elements (AREA)
- Wire Bonding (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体素子を基板
に接合した半導体装置、及び固体撮像素子を透明基板に
接合した固体撮像装置に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device having a semiconductor element bonded to a substrate and a solid-state imaging device having a solid-state imaging element bonded to a transparent substrate.
【０００２】[0002]
【従来の技術】従来より、半導体素子を基板に電気的、
機械的に接合した半導体装置においては、基板側に導電
性ペーストによる配線パターンを形成し、半導体素子側
にバンプを設け、この配線パターンとバンプとを電気的
に接合した状態で、基板と半導体素子とを接着剤により
機械的に固着保持するようにしている。また同様に、固
体撮像素子を透明基板に電気的、機械的に接合した固体
撮像装置においては、透明基板側に導電性ペーストによ
る配線パターンを形成し、固体撮像素子側にバンプを設
け、この配線パターンとバンプとを電気的に接合した状
態で、透明基板と固体撮像素子とを接着剤により機械的
に固着保持するようにしている。2. Description of the Related Art Conventionally, a semiconductor element is electrically connected to a substrate,
In a mechanically bonded semiconductor device, a wiring pattern made of a conductive paste is formed on the substrate side, bumps are provided on the semiconductor element side, and the wiring pattern and the bumps are electrically bonded to each other, and the substrate and the semiconductor element are bonded together. And are mechanically fixed and held by an adhesive. Similarly, in a solid-state imaging device in which a solid-state imaging device is electrically and mechanically bonded to a transparent substrate, a wiring pattern made of conductive paste is formed on the transparent substrate side, and bumps are provided on the solid-state imaging device side. The transparent substrate and the solid-state imaging device are mechanically fixed and held by an adhesive in a state where the pattern and the bump are electrically joined.
【０００３】[0003]
【発明が解決しようとする課題】ところで、上述のよう
な従来の半導体装置や固体撮像装置においては、導電性
ペーストにヤング率５０００Ｎ／ｍｍ2 （５００ｋｇｆ
／ｍｍ2 ）以上の硬い材料を用いていた。このため、機
械的衝撃や熱衝撃がバンプと導電性ペーストとの接合部
に応力として作用しやすくなり、半導体素子や固体撮像
素子と基板との電気的接続状態の信頼性が低くなるとい
う問題があった。In the conventional semiconductor device and solid-state image pickup device as described above, the conductive paste contains Young's modulus of 5000 N / mm 2 (500 kgf).
/ Mm 2 ) or more hard material was used. Therefore, mechanical shock or thermal shock easily acts as stress on the joint between the bump and the conductive paste, and the reliability of the electrical connection state between the semiconductor element or the solid-state image sensor and the substrate decreases. there were.
【０００４】そこで本発明の目的は、機械的衝撃や熱衝
撃に対する半導体素子や固体撮像素子と基板とのバンプ
とパターンの電気的接続状態の信頼性を向上できる半導
体装置及び固体撮像装置を提供することにある。Therefore, an object of the present invention is to provide a semiconductor device and a solid-state image pickup device capable of improving the reliability of the electrical connection state of the bumps and patterns between the semiconductor element or solid-state image pickup element and the substrate against mechanical shock or thermal shock. Especially.
【０００５】[0005]
【課題を解決するための手段】本発明は前記目的を達成
するため、導電性ペーストによって形成された配線パタ
ーンを有する基板と、前記配線パターンと電気的に接続
されるバンプを有する半導体素子とを有し、前記配線パ
ターンとバンプとを電気的に接合した状態で、基板と半
導体素子とを接着剤により固着保持した半導体装置にお
いて、前記導電性ペーストのヤング率を２００Ｎ／ｍｍ
2 から１０００Ｎ／ｍｍ2 までの範囲としたことを特徴
とする。In order to achieve the above object, the present invention provides a substrate having a wiring pattern formed of a conductive paste and a semiconductor element having bumps electrically connected to the wiring pattern. In a semiconductor device in which the substrate and the semiconductor element are fixedly held by an adhesive in a state where the wiring pattern and the bump are electrically joined, the Young's modulus of the conductive paste is 200 N / mm.
It is characterized in that the range is from 2 to 1000 N / mm 2 .
【０００６】また本発明は、導電性ペーストによって形
成された配線パターンを有する透明基板と、前記配線パ
ターンと電気的に接続されるバンプを有する固体撮像素
子とを有し、前記配線パターンとバンプとを電気的に接
合した状態で、透明基板と固体撮像素子とを接着剤によ
り固着保持した固体撮像装置において、前記導電性ペー
ストのヤング率を２００Ｎ／ｍｍ2 から１０００Ｎ／ｍ
ｍ2 までの範囲としたことを特徴とする。The present invention further comprises a transparent substrate having a wiring pattern formed of a conductive paste, and a solid-state image pickup device having a bump electrically connected to the wiring pattern, wherein the wiring pattern and the bump are provided. In a solid-state image pickup device in which a transparent substrate and a solid-state image pickup element are fixedly held by an adhesive in a state of being electrically connected to each other, Young's modulus of the conductive paste is 200 N / mm 2 to 1000 N / m 2.
It is characterized in that the range is up to m 2 .
【０００７】本発明の半導体装置では、基板に設ける導
電性ペーストのヤング率を２００Ｎ／ｍｍ2 から１００
０Ｎ／ｍｍ2 までの従来に比較して低い範囲としたこと
から、この基板に半導体素子を装着した場合に、機械的
衝撃や熱衝撃によって生じるバンプ周辺の応力を導電性
パターンによって有効に吸収でき、機械的衝撃や熱衝撃
に対する電気的接続状態の信頼性を向上することが可能
となる。In the semiconductor device of the present invention, the Young's modulus of the conductive paste provided on the substrate is 200 N / mm 2 to 100.
Since the range was set to 0 N / mm 2 which is lower than the conventional range, when the semiconductor element is mounted on this substrate, the stress around the bump caused by mechanical shock or thermal shock can be effectively absorbed by the conductive pattern. It is possible to improve the reliability of the electrical connection state against mechanical shock and thermal shock.
【０００８】また本発明の固体撮像装置では、透明基板
に設ける導電性ペーストのヤング率を２００Ｎ／ｍｍ2
から１０００Ｎ／ｍｍ2 までの従来に比較して低い範囲
としたことから、この透明基板に固体撮像素子を装着し
た場合に、機械的衝撃や熱衝撃によって生じるバンプ周
辺の応力を導電性パターンによって有効に吸収でき、機
械的衝撃や熱衝撃に対する電気的接続状態の信頼性を向
上することが可能となる。In the solid-state image pickup device of the present invention, the Young's modulus of the conductive paste provided on the transparent substrate is 200 N / mm 2
To 1000 N / mm 2 compared to the conventional range, the stress around the bump caused by mechanical shock or thermal shock is effective by the conductive pattern when the solid-state image sensor is mounted on this transparent substrate. Can be absorbed, and the reliability of the electrical connection state against mechanical shock and thermal shock can be improved.
【０００９】[0009]
【発明の実施の形態】以下、本発明による半導体装置及
び固体撮像装置の実施の形態について説明する。なお、
以下に説明する実施の形態は、本発明の好適な具体例で
あり、技術的に好ましい種々の限定が付されているが、
本発明の範囲は、以下の説明において、特に本発明を限
定する旨の記載がない限り、これらの態様に限定されな
いものとする。BEST MODE FOR CARRYING OUT THE INVENTION Embodiments of a semiconductor device and a solid-state image pickup device according to the present invention will be described below. In addition,
The embodiment described below is a preferred specific example of the present invention, and is provided with various technically preferable limitations,
In the following description, the scope of the present invention is not limited to these embodiments unless otherwise specified.
【００１０】本実施の形態は、本発明を固体撮像装置で
実施したものであるが、同様に半導体装置にも同様に適
用し得るものである。図１は、本発明の実施の形態によ
る固体撮像装置を示す平面図であり、図２は、図１に示
す固体撮像装置の左側面図である。この固体撮像装置
は、透明基板１と固体撮像素子３とを電気的及び機械的
に接合したものである。In the present embodiment, the present invention is embodied in a solid-state image pickup device, but it can be similarly applied to a semiconductor device. 1 is a plan view showing a solid-state imaging device according to an embodiment of the present invention, and FIG. 2 is a left side view of the solid-state imaging device shown in FIG. In this solid-state image pickup device, a transparent substrate 1 and a solid-state image pickup element 3 are electrically and mechanically joined.
【００１１】まず、透明基板１側の構成について説明す
る。この透明基板１は、ガラス板等よりなり、固体撮像
素子３の受光面をカバーするとともに、固体撮像素子３
を図示しない装置セットのケース内に組み込むためのも
のである。この透明基板１の一側面には、固体撮像素子
３を接続するための配線パターンが形成されており、こ
の配線パターンは、スクリーン印刷、ディスペンス、ま
たはスタンピングにより、Ａｇペースト等の熱硬化性ま
たは熱可塑性導電性ペースト２を厚さ１０μｍ以上の膜
厚パターンで形成し、加熱し、硬化させて形成したもの
である。First, the structure on the transparent substrate 1 side will be described. The transparent substrate 1 is made of a glass plate or the like, covers the light-receiving surface of the solid-state image sensor 3, and at the same time, solid-state image sensor 3
Is to be incorporated in the case of a device set (not shown). A wiring pattern for connecting the solid-state imaging device 3 is formed on one side surface of the transparent substrate 1, and the wiring pattern is formed by screen printing, dispensing, or stamping with a thermosetting or thermosetting material such as Ag paste. It is formed by forming the plastic conductive paste 2 in a film thickness pattern having a thickness of 10 μm or more, heating it, and curing it.
【００１２】そして、本例においては、この導電性ペー
スト２にヤング率２００Ｎ／ｍｍ2〜１０００Ｎ／ｍｍ2
（２０ｋｇｆ／ｍｍ2 〜１００ｋｇｆ／ｍｍ2 ）の範
囲内の材料を使用している。また、この導電性ペースト
２による配線パターンは、固体撮像素子３と電気的接続
を行うためのインナーリード部４と、配線を外部へ引き
出すためのアウターリード部５との間を引き回すように
レイアウトされる。なお、アウターリード部５は、配線
を外部へ引き出すための部材（フレキシブル基板等）を
接続する電極として使用する。In this example, the conductive paste 2 has a Young's modulus of 200 N / mm 2 to 1000 N / mm 2.
Using materials in the range of (20kgf / mm 2 ~100kgf / mm 2). The wiring pattern of the conductive paste 2 is laid out so as to be routed between the inner lead portion 4 for electrically connecting to the solid-state imaging device 3 and the outer lead portion 5 for leading the wiring to the outside. It The outer lead portion 5 is used as an electrode for connecting a member (flexible substrate or the like) for drawing out the wiring to the outside.
【００１３】次に、固体撮像素子３側の構成について説
明する。この固体撮像素子３は、方形板状に形成された
素子チップの表面中央に受光部（有効撮像領域）９を有
する２次元イメージセンサとして構成されている。ま
た、固体撮像素子３は、受光部９の周辺にアルミ等によ
る電極パッド部７が設けられ、この電極パッド部７にＡ
ｕボールバンプ等のバンプ８が形成されている。なお、
このときバンプの高さを均一にするレベリングを行わな
ければ、バンプの高さバラツキは〜４０μｍに及ぶもの
となる。Next, the structure of the solid-state image pickup device 3 will be described. The solid-state image pickup device 3 is configured as a two-dimensional image sensor having a light receiving portion (effective image pickup area) 9 in the center of the surface of a square plate-shaped element chip. Further, the solid-state imaging device 3 is provided with an electrode pad portion 7 made of aluminum or the like around the light receiving portion 9, and the electrode pad portion 7 is
Bumps 8 such as u-ball bumps are formed. In addition,
At this time, if the leveling for making the height of the bumps uniform is not performed, the height variation of the bumps reaches to 40 μm.
【００１４】次に、以上のような固体撮像素子３と透明
基板１との電気的接合および固着・保持方法について説
明する。まず、固体撮像素子３と透明基板１とを位置合
わせして重ね合わせる。すなわち、パターン形成された
透明基板１の各インナーリード部４と、それに対応した
固体撮像素子３の各バンプ８が一致するように、透明基
板１に対して固体撮像素子３を位置決め配置する。そし
て、この状態で固体撮像素子３と透明基板１とを加圧
し、各インナーリード部４と各バンプ８とを圧接させる
ことにより、両者の電気的接合を行う。Next, a method for electrically connecting, fixing, and holding the solid-state image sensor 3 and the transparent substrate 1 as described above will be described. First, the solid-state image sensor 3 and the transparent substrate 1 are aligned and superposed. That is, the solid-state imaging device 3 is positioned and arranged with respect to the transparent substrate 1 so that the inner lead portions 4 of the patterned transparent substrate 1 and the corresponding bumps 8 of the solid-state imaging device 3 are aligned with each other. Then, in this state, the solid-state image pickup device 3 and the transparent substrate 1 are pressed, and the inner lead portions 4 and the bumps 8 are brought into pressure contact with each other to electrically connect the two.
【００１５】次に、バンプ８が圧接されている状態で、
絶縁性の接着剤として、紫外線硬化型あるいは熱硬化型
等の透明樹脂１０を固体撮像素子３と透明基板１との隙
間に流し込む。これにより、図１に示すように、固体撮
像素子３と透明基板１の接合部の外周から隙間にかけ
て、透明樹脂（接着剤）１０が充填塗布された状態とな
る。この後、紫外線または熱を加えて透明樹脂１０を硬
化させ、固体撮像素子３と透明基板１とを固着して機械
的に接合し、インナーリード部４とバンプ８とを電気的
接続状態に保持する。Next, with the bumps 8 being in pressure contact,
An ultraviolet curable or thermosetting transparent resin 10 as an insulating adhesive is poured into the gap between the solid-state imaging device 3 and the transparent substrate 1. As a result, as shown in FIG. 1, the transparent resin (adhesive) 10 is filled and applied from the outer periphery of the joint portion between the solid-state imaging device 3 and the transparent substrate 1 to the gap. After that, the transparent resin 10 is cured by applying ultraviolet rays or heat, and the solid-state imaging device 3 and the transparent substrate 1 are fixed and mechanically joined to each other, and the inner lead portion 4 and the bump 8 are held in an electrically connected state. To do.
【００１６】このようにして、固体撮像素子３と透明基
板１とを電気的、機械的に接合できる。そして、本例で
は、パターン材料である導電性ペーストに低いヤング率
｛２００〜１０００Ｎ／ｍｍ２（２０〜１００ｋｇｆ／
ｍｍ２）｝の材料を用いるため、機械的衝撃や熱衝撃時
に発生するバンプ周辺の応力を吸収する効果があり、バ
ンプとパターンの電気的接続信頼性が大幅に向上でき
る。In this way, the solid-state image pickup device 3 and the transparent substrate 1 can be electrically and mechanically joined together. Then, in this example, a low Young's modulus {200 to 1000 N / mm 2 (20 to 100 kgf /
mm 2 )} material is used, so that it has an effect of absorbing stress around the bump generated at the time of mechanical shock or thermal shock, and the reliability of electrical connection between the bump and the pattern can be significantly improved.
【００１７】以上、本発明の実施の形態について説明し
たが、本発明は以上の例に限定されることなく、種々変
形が可能である。例えば、図１及び図２に示す例では、
接着剤である透明樹脂１０を固体撮像素子３と透明基板
１との間隙に充填する状態で設けたが、図３及び図４に
示すように、固体撮像素子３の受光部９を覆わないよう
に、固体撮像素子３の外周部だけに接着剤である熱硬化
性あるいは紫外線硬化性の樹脂１１を塗布し、熱または
紫外線を加えて硬化させるようにしてもよい。また、こ
の場合には、透明樹脂である必要はなく、不透明の接着
剤を用いることも可能である。なお、図３及び図４に示
す透明樹脂１０以外の構成は、図１及び図２に示す例と
同様であるので説明は省略する。Although the embodiments of the present invention have been described above, the present invention is not limited to the above examples, and various modifications can be made. For example, in the example shown in FIGS. 1 and 2,
Although the transparent resin 10 as an adhesive is provided in a state of filling the gap between the solid-state image sensor 3 and the transparent substrate 1, as shown in FIGS. 3 and 4, the light-receiving portion 9 of the solid-state image sensor 3 should not be covered. Alternatively, the thermosetting or ultraviolet curable resin 11 as an adhesive may be applied only to the outer peripheral portion of the solid-state image sensor 3 and cured by applying heat or ultraviolet rays. Further, in this case, the transparent resin does not have to be used, and an opaque adhesive can be used. The configuration other than the transparent resin 10 shown in FIGS. 3 and 4 is the same as the example shown in FIGS.
【００１８】また、固体撮像素子３と透明基板１とを固
着する方法として、バンプを圧接する前に、固体撮像素
子３が搭載されるエリアに接着剤である樹脂を予め塗布
しておき、バンプを圧接した後、樹脂を硬化させるよう
にしてもよい。また、以上は本発明を固体撮像装置に適
用した例を示したが、固体撮像素子以外の半導体素子を
基板に搭載する場合にも同様に適用できるものである。
この場合の基板は、透明基板である必要はなく、また、
接着剤である樹脂には透明樹脂を用いる必要もないもの
である。As a method for fixing the solid-state image pickup device 3 and the transparent substrate 1, a resin as an adhesive is applied in advance to the area where the solid-state image pickup device 3 is mounted before the bumps are pressed against each other. The resin may be hardened after being pressed. Further, although the example in which the present invention is applied to the solid-state imaging device has been described above, the present invention can be similarly applied to the case where a semiconductor element other than the solid-state imaging element is mounted on the substrate.
The substrate in this case need not be a transparent substrate, and
It is not necessary to use a transparent resin as the resin that is the adhesive.
【００１９】[0019]
【発明の効果】以上説明したように本発明半導体装置で
は、基板に設ける導電性ペーストのヤング率を２００Ｎ
／ｍｍ2 から１０００Ｎ／ｍｍ2 までの従来に比較して
低い範囲とした。このため、基板に半導体素子を装着し
た場合に、機械的衝撃や熱衝撃によって生じるバンプ周
辺の応力をヤング率の低い導電性パターンによって有効
に吸収でき、機械的衝撃や熱衝撃に対する電気的接続状
態の信頼性を向上することが可能となる。As described above, in the semiconductor device of the present invention, the Young's modulus of the conductive paste provided on the substrate is 200 N.
/ Mm 2 to 1000 N / mm 2, which is lower than the conventional range. Therefore, when a semiconductor element is mounted on the substrate, the stress around the bumps caused by mechanical shock or thermal shock can be effectively absorbed by the conductive pattern having a low Young's modulus, and the electrical connection state against mechanical shock or thermal shock can be achieved. It is possible to improve the reliability of.
【００２０】また本発明の固体撮像装置では、透明基板
に設ける導電性ペーストのヤング率を２００Ｎ／ｍｍ2
から１０００Ｎ／ｍｍ2 までの従来に比較して低い範囲
とした。このため、透明基板に固体撮像素子を装着した
場合に、機械的衝撃や熱衝撃によって生じるバンプ周辺
の応力をヤング率の低い導電性パターンによって有効に
吸収でき、機械的衝撃や熱衝撃に対する電気的接続状態
の信頼性を向上することが可能となる。In the solid-state image pickup device of the present invention, the Young's modulus of the conductive paste provided on the transparent substrate is 200 N / mm 2.
To 1000 N / mm 2 compared to the conventional range. Therefore, when the solid-state imaging device is mounted on the transparent substrate, the stress around the bumps caused by mechanical shock or thermal shock can be effectively absorbed by the conductive pattern having a low Young's modulus, and the electrical shock against mechanical shock or thermal shock can be obtained. It is possible to improve the reliability of the connection state.
【図１】本発明の第１の実施の形態による固体撮像装置
を示す平面図である。FIG. 1 is a plan view showing a solid-state imaging device according to a first embodiment of the present invention.
【図２】図１に示す固体撮像装置の左側面図である。FIG. 2 is a left side view of the solid-state imaging device shown in FIG.
【図３】本発明の第２の実施の形態による固体撮像装置
を示す平面図である。FIG. 3 is a plan view showing a solid-state imaging device according to a second embodiment of the present invention.
【図４】図１に示す固体撮像装置の左側面図である。FIG. 4 is a left side view of the solid-state imaging device shown in FIG.
１……透明基板、２……導電性ペースト、３……固体撮
像素子、４……インナーリード部、５……アウターリー
ド部、７……電極パッド部、８……バンプ、９……受光
部、１０、１１……透明樹脂。1 ... Transparent substrate, 2 ... Conductive paste, 3 ... Solid-state image sensor, 4 ... Inner lead part, 5 ... Outer lead part, 7 ... Electrode pad part, 8 ... Bump, 9 ... Light receiving Part, 10, 11 ... Transparent resin.
フロントページの続き (72)発明者 山田 智子 東京都品川区北品川６丁目７番35号 ソニ ー株式会社内 (72)発明者 後藤 英之 茨城県つくば市東光台５丁目９−３ ハリ マ化成株式会社内 (72)発明者 上田 雅之 茨城県つくば市東光台５丁目９−３ ハリ マ化成株式会社内 (72)発明者 松葉 頼重 茨城県つくば市東光台５丁目９−３ ハリ マ化成株式会社内 Ｆターム(参考） 4M118 HA12 HA26 HA31 HA40 5F044 KK06 KK18 LL07 5F061 AA01 BA03 CA04 DE03 FA01Continued front page (72) Inventor Tomoko Yamada 6-735 Kita-Shinagawa, Shinagawa-ku, Tokyo Soni -Inside the corporation (72) Inventor Hideyuki Goto Haruka 5-3, Tokodai, Tsukuba, Ibaraki Prefecture Ma Kasei Co., Ltd. (72) Inventor Masayuki Ueda Haruka 5-3, Tokodai, Tsukuba, Ibaraki Prefecture Ma Kasei Co., Ltd. (72) Inventor, Matsuba Yorishige Haruka 5-3, Tokodai, Tsukuba, Ibaraki Prefecture Ma Kasei Co., Ltd. F-term (reference) 4M118 HA12 HA26 HA31 HA40 5F044 KK06 KK18 LL07 5F061 AA01 BA03 CA04 DE03 FA01
Claims (9)
パターンを有する基板と、前記配線パターンと電気的に
接続されるバンプを有する半導体素子とを有し、前記配
線パターンとバンプとを電気的に接合した状態で、基板
と半導体素子とを接着剤により固着保持した半導体装置
において、 前記導電性ペーストのヤング率を２００Ｎ／ｍｍ2 から
１０００Ｎ／ｍｍ2 までの範囲とした、 ことを特徴とする半導体装置。1. A substrate having a wiring pattern formed of a conductive paste, and a semiconductor element having a bump electrically connected to the wiring pattern, wherein the wiring pattern and the bump are electrically joined. In a semiconductor device in which the substrate and the semiconductor element are fixedly held by an adhesive in this state, the Young's modulus of the conductive paste is in the range of 200 N / mm 2 to 1000 N / mm 2. .
合部分の外周から隙間内にかけて塗布されていることを
特徴とする請求項１記載の半導体装置。2. The semiconductor device according to claim 1, wherein the adhesive is applied from the outer periphery of the bonding portion between the substrate and the semiconductor element to the inside of the gap.
たは紫外線硬化性樹脂よりなることを特徴とする請求項
１記載の半導体装置。3. The semiconductor device according to claim 1, wherein the adhesive is made of an insulating thermosetting resin or an ultraviolet curable resin.
熱可塑性の導電性ペーストであることを特徴とする請求
項１記載の半導体装置。4. The semiconductor device according to claim 1, wherein the conductive paste is a thermosetting or thermoplastic conductive paste.
パターンを有する透明基板と、前記配線パターンと電気
的に接続されるバンプを有する固体撮像素子とを有し、
前記配線パターンとバンプとを電気的に接合した状態
で、透明基板と固体撮像素子とを接着剤により固着保持
した固体撮像装置において、 前記導電性ペーストのヤング率を２００Ｎ／ｍｍ2 から
１０００Ｎ／ｍｍ2 までの範囲とした、 ことを特徴とする固体撮像装置。5. A transparent substrate having a wiring pattern formed of a conductive paste, and a solid-state imaging device having bumps electrically connected to the wiring pattern,
In a solid-state imaging device in which a transparent substrate and a solid-state imaging device are fixedly held by an adhesive in a state where the wiring pattern and the bump are electrically joined, a Young's modulus of the conductive paste is 200 N / mm 2 to 1000 N / mm Solid-state imaging device characterized in that the range is up to 2 .
体撮像素子との接合部分の外周から隙間内にかけて塗布
されていることを特徴とする請求項５記載の固体撮像装
置。6. The solid-state imaging device according to claim 5, wherein the adhesive is transparent and is applied from an outer periphery of a bonding portion between the transparent substrate and the solid-state imaging device to a gap.
との接合部分の外周領域であって固体撮像素子の受光部
を遮らない範囲に塗布されていることを特徴とする請求
項５記載の固体撮像装置。7. The adhesive is applied to an outer peripheral region of a joint portion between a transparent substrate and a solid-state image sensor, and in a range that does not block a light-receiving part of the solid-state image sensor. Solid-state imaging device.
たは紫外線硬化性樹脂よりなることを特徴とする請求項
５記載の固体撮像装置。8. The solid-state imaging device according to claim 5, wherein the adhesive is made of an insulating thermosetting resin or an ultraviolet curable resin.
熱可塑性の導電性ペーストであることを特徴とする請求
項５記載の固体撮像装置。9. The solid-state imaging device according to claim 5, wherein the conductive paste is a thermosetting or thermoplastic conductive paste.
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|---|---|---|---|
| JP2001248335A JP2003060114A (en) | 2001-08-17 | 2001-08-17 | Semiconductor device and solid-state image pickup device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001248335A JP2003060114A (en) | 2001-08-17 | 2001-08-17 | Semiconductor device and solid-state image pickup device |
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| Publication Number | Publication Date |
|---|---|
| JP2003060114A true JP2003060114A (en) | 2003-02-28 |
Family
ID=19077514
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001248335A Pending JP2003060114A (en) | 2001-08-17 | 2001-08-17 | Semiconductor device and solid-state image pickup device |
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Cited By (4)
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| JP2013000360A (en) * | 2011-06-16 | 2013-01-07 | Toshiba Corp | Endoscope device and circuit board |
| JP2013000359A (en) * | 2011-06-16 | 2013-01-07 | Toshiba Corp | Endoscope apparatus and electronic apparatus |
| JP2013128778A (en) * | 2013-01-29 | 2013-07-04 | Toshiba Corp | Endoscope apparatus and electronic device |
| CN104596681A (en) * | 2013-10-31 | 2015-05-06 | 精工爱普生株式会社 | Sensor device, force detecting device, robot, electronic component conveying apparatus, electronic component inspecting apparatus, and component machining apparatus |
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