JPH06350066A - Full contact type image sensor and its manufacture - Google Patents

Full contact type image sensor and its manufacture

Info

Publication number
JPH06350066A
JPH06350066A JP5138225A JP13822593A JPH06350066A JP H06350066 A JPH06350066 A JP H06350066A JP 5138225 A JP5138225 A JP 5138225A JP 13822593 A JP13822593 A JP 13822593A JP H06350066 A JPH06350066 A JP H06350066A
Authority
JP
Japan
Prior art keywords
light
image sensor
layer
circuit conductor
transparent
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5138225A
Other languages
Japanese (ja)
Inventor
Masahiro Nakagawa
雅浩 中川
Tetsuro Nakamura
哲朗 中村
Eiichiro Tanaka
栄一郎 田中
Shinji Fujiwara
愼司 藤原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP5138225A priority Critical patent/JPH06350066A/en
Priority to KR1019930021755A priority patent/KR0137398B1/en
Priority to US08/141,328 priority patent/US5477047A/en
Priority to DE69327440T priority patent/DE69327440T2/en
Priority to EP93117154A priority patent/EP0594195B1/en
Priority to US08/351,020 priority patent/US5556809A/en
Publication of JPH06350066A publication Critical patent/JPH06350066A/en
Pending legal-status Critical Current

Links

Landscapes

  • Optical Elements Other Than Lenses (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Facsimile Heads (AREA)

Abstract

PURPOSE:To provide a full contact type image sensor capable of preventing the cross talk of transmitted light and the generation of stray light, and having a higher MTF value and higher resolution. CONSTITUTION:First and second slits 15 and 16 are formed with high precision on the front and rear surfaces of a translucent substrate 1, by forming shading layers 8 and 10 with the same mask along with a circuit conductor layer 2 on the front and rear surfaces of the translucent substrate 1, and a route for light is secured with high precision. Consequently, it becomes possible to obtain high-performance full contact type image sensor unit capable of eliminating the cross talk of light and unnecessary lights (stray light) at the time of reading.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、ファクシミリ装置等に
利用できる完全密着型イメージセンサに関するものであ
る。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a perfect contact type image sensor that can be used in facsimile machines and the like.

【0002】[0002]

【従来の技術】従来の完全密着型イメージセンサは、図
2に示すように表面上に回路導体層22を形成した透光
性基板21の表面上に、光硬化型透明絶縁樹脂25を介
して受光素子アレイ27を有する半導体素子から成るイ
メージセンサチップ23をフェイスダウンで実装し、そ
のイメージセンサチップ23上に形成された取り出し電
極24を回路導体層22に当接させ、イメージセンサチ
ップ23を透明保護層26にて覆って保護し、透光性基
板21の表面には遮光層28を設け、透光性基板21の
裏面には直接原稿30が接しないように導電透明膜29
を設けた構造をとっていた。31はLEDアレイから成
る光源、32は原稿30の搬送ローラである。
2. Description of the Related Art In a conventional perfect contact type image sensor, as shown in FIG. 2, a photocurable transparent insulating resin 25 is provided on the surface of a transparent substrate 21 having a circuit conductor layer 22 formed on the surface thereof. The image sensor chip 23 made of a semiconductor element having the light receiving element array 27 is mounted face down, the extraction electrode 24 formed on the image sensor chip 23 is brought into contact with the circuit conductor layer 22, and the image sensor chip 23 is transparent. A light-shielding layer 28 is provided on the front surface of the transparent substrate 21 so as to cover and protect it with a protective layer 26, and a conductive transparent film 29 is provided on the back surface of the transparent substrate 21 so that the original 30 does not come into direct contact therewith.
It had a structure with. Reference numeral 31 is a light source including an LED array, and 32 is a conveyance roller for the document 30.

【0003】[0003]

【発明が解決しようとする課題】しかしながら上記のよ
うな構成では、遮光層28の印刷精度のばらつきがスリ
ットの幅のばらつきを決めてしまい、スリットの幅が大
きくなるほど、透光性基板21内でクロストーク及び迷
光が発生してしまい、MTF値や解像度が低下するとい
う課題があった。
However, in the above-mentioned structure, the variation in the printing accuracy of the light shielding layer 28 determines the variation in the width of the slit, and as the width of the slit becomes larger, the inside of the transparent substrate 21 becomes larger. There is a problem that crosstalk and stray light are generated, and the MTF value and the resolution are lowered.

【0004】本発明は、上記従来の問題点に鑑み、透過
光のクロストークや迷光の発生を防止でき、MTF値や
解像度の高い完全密着型イメージセンサ及びその製造方
法を提供することを目的とする。
In view of the above conventional problems, it is an object of the present invention to provide a perfect contact type image sensor having a high MTF value and a high resolution, which can prevent crosstalk of transmitted light and stray light and a manufacturing method thereof. To do.

【0005】[0005]

【課題を解決するための手段】本発明の完全密着型イメ
ージセンサは、表面上に回路導体層を形成した透光性基
板、または表裏両面に回路導体層を形成するとともにス
ルホールを形成して両面配線の回路導体層を形成した透
光性基板と、透光性基板の表面上に光熱併用硬化型透明
絶縁樹脂を介して実装した受光素子アレイを有する半導
体素子と、半導体素子を保護する透明保護層とを備えた
完全密着型イメージセンサにおいて、透光性基板の裏面
において受光素子アレイに対向する部分と光を透過する
第1スリットとなる部分とを除いて導電性の遮光層、ま
たは回路導体層と同一層から成る遮光層を形成し、その
上に透光性基板裏面全面にわたって導電透明膜を形成
し、透光性基板の表面において受光素子アレイに対向す
る部分と光を透過する第2スリットとなる部分とを除い
て回路導体層と同一層から成る遮光層を形成したことを
特徴とする。
A perfect contact type image sensor of the present invention is a translucent substrate having a circuit conductor layer formed on the surface thereof, or a circuit conductor layer formed on both front and back surfaces and a through hole formed on both sides thereof. A semiconductor element having a light-transmitting substrate on which a circuit conductor layer of wiring is formed, a light-receiving element array mounted on the surface of the light-transmitting substrate through a light-heat-curing transparent transparent insulating resin, and transparent protection for protecting the semiconductor element. In a perfect contact image sensor including a layer, a conductive light-shielding layer or a circuit conductor except for a portion of the back surface of a light-transmissive substrate that faces the light-receiving element array and a portion that serves as a first slit that transmits light. Form a light-shielding layer consisting of the same layer as the above layer, and form a conductive transparent film over the entire back surface of the light-transmissive substrate, and transmit light to the portion of the light-transmissive substrate surface facing the light-receiving element array. Except for the portion to be the second slit, characterized in that the formation of the light shielding layer made of the circuit conductor layer and the same layer.

【0006】また、本発明の完全密着型イメージセンサ
の製造方法は、透光性基板の表面上、または両面上に、
金または銅等の金属層を蒸着法またはスパッタリング法
または箔等を用いて厚さ2μm〜35μmに形成し、そ
の後フォトリソグラフィ法によって回路導体層及び遮光
層を同一工程、同一マスクで形成することを特徴とす
る。
Further, the manufacturing method of the perfect contact type image sensor of the present invention, the surface of the translucent substrate, or on both sides,
A metal layer such as gold or copper is formed to a thickness of 2 μm to 35 μm by using a vapor deposition method, a sputtering method or a foil, and then a circuit conductor layer and a light shielding layer are formed by the same process and the same mask by photolithography. Characterize.

【0007】[0007]

【作用】本発明によれば、透光性基板の裏面と導電透明
膜との間及び透光性基板の表面にそれぞれ遮光層を形成
して第1スリットと第2スリットを設けているので、光
のクロストークや迷光の発生を防止することができ、か
つ透明基板裏面の遮光層が導電性の遮光層または回路導
体層と同一層から成る遮光層から成るので耐静電気性を
向上することができ、また回路導体層と遮光層を同一工
程、同一マスクで形成することにより、光の光路を精度
よく確保でき、従って感度ばらつきが小さく、画像読み
取りのS/N比、分解能、および光の転送効率の高い、
高性能で高信頼性の完全密着型イメージセンサを実現で
きる。
According to the present invention, since the light shielding layer is formed between the back surface of the transparent substrate and the conductive transparent film and on the surface of the transparent substrate, the first slit and the second slit are provided. It is possible to prevent light crosstalk and stray light, and improve the electrostatic resistance because the light-shielding layer on the back surface of the transparent substrate is made of the same light-shielding layer as the conductive light-shielding layer or the circuit conductor layer. By forming the circuit conductor layer and the light-shielding layer in the same step and in the same mask, the optical path of the light can be accurately ensured, and therefore the sensitivity variation is small, the S / N ratio of image reading, the resolution, and the light transfer. High efficiency,
It is possible to realize a high performance and highly reliable perfect contact type image sensor.

【0008】[0008]

【実施例】以下本発明の一実施例の完全密着型イメージ
センサについて、図1を参照しながら説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A perfect contact type image sensor according to an embodiment of the present invention will be described below with reference to FIG.

【0009】図1において、1は透光性基板、2は透光
性基板1の表面上及び裏面上に形成された回路導体層で
あり、スルホールを介して両面配線の回路導体層を構成
している。3は半導体素子から成るイメージセンサチッ
プ、4はイメージセンサチップ3に設けられた電極、1
4はイメージセンサチップ3の電極4に設けられたAu
バンプ、5はイメージセンサチップ3を透光性基板1へ
実装するための光熱併用硬化型透明絶縁樹脂、6はイメ
ージセンサチップ3を覆って保護する透明保護層、7は
イメージセンサチップ3に設けられている受光素子アレ
イである。8は透光性基板1の裏面において受光素子ア
レイ7に対向する部分から光源配置方向に第1スリット
15となる0.05〜0.5mmの幅をあけて形成され
た裏面遮光層であり、回路導体層2と同一層で形成され
ている。9は透光性基板1の裏面全面に設けられた導電
性を少し有する透明導電膜である。10は透光性基板1
の表面において受光素子アレイ7に対向する部分から光
源配置方向に第2スリット16となる0.1〜0.7m
mの幅をあけて形成された表面遮光層であり、回路導体
層2と同一層で形成されている。
In FIG. 1, reference numeral 1 is a translucent substrate, and 2 is a circuit conductor layer formed on the front and back surfaces of the translucent substrate 1, which constitutes a circuit conductor layer of double-sided wiring through a through hole. ing. Reference numeral 3 denotes an image sensor chip made of a semiconductor element, 4 denotes electrodes provided on the image sensor chip 3, 1
4 is Au provided on the electrode 4 of the image sensor chip 3.
Bumps 5 are photo-thermo-curable transparent insulating resins for mounting the image sensor chip 3 on the transparent substrate 1, 6 is a transparent protective layer for covering and protecting the image sensor chip 3, and 7 is provided on the image sensor chip 3. It is a light receiving element array. Reference numeral 8 denotes a back surface light-shielding layer formed on the back surface of the transparent substrate 1 with a width of 0.05 to 0.5 mm serving as the first slit 15 in the light source arrangement direction from a portion facing the light receiving element array 7, It is formed of the same layer as the circuit conductor layer 2. Reference numeral 9 is a transparent conductive film provided on the entire back surface of the transparent substrate 1 and having a slight conductivity. 10 is a transparent substrate 1
0.1 to 0.7 m that becomes the second slit 16 in the light source arrangement direction from the portion facing the light receiving element array 7 on the surface of
The surface light-shielding layer is formed with a width of m and is formed in the same layer as the circuit conductor layer 2.

【0010】11は読み取るべき原稿、12は原稿11
を原稿搬送方向の上方から照明するLEDアレイから成
る光源、13は原稿を読み取り部の読み取り位置に搬送
する導電性搬送ローラーである。17は光源12からの
光の原稿搬送方向からの入射角である。18は透光性基
板1の表面上のイメージセンサチップ実装部及び光路部
に窓を開けた補強板、19は補強板18を透光性基板1
の表面に一体的に接着する接着剤である。
Reference numeral 11 is an original to be read, and 12 is an original 11.
Is a light source including an LED array for illuminating the document from above in the document transport direction, and 13 is a conductive transport roller that transports the document to the reading position of the reading unit. Reference numeral 17 denotes an incident angle of the light from the light source 12 in the original conveying direction. Reference numeral 18 denotes a reinforcing plate having a window formed in the image sensor chip mounting portion and the optical path portion on the surface of the transparent substrate 1, and 19 denotes the reinforcing plate 18.
It is an adhesive that adheres integrally to the surface of.

【0011】次に、以上の完全密着型イメージセンサに
ついてさらに詳細に説明する。
Next, the above complete contact image sensor will be described in more detail.

【0012】まず半導体プロセスを用いて単結晶シリコ
ン基板(ウエハ)上に、各種素子(図示せず)及び取り
出し電極を作る。各電極については、電気メッキまたは
ボールボンディング法によりその表面上にAuバンプ1
4を形成する。このウエハを高精度ダイシング技術によ
り切断し、半導体素子から成るイメージセンサチップ3
を作る。
First, various elements (not shown) and extraction electrodes are formed on a single crystal silicon substrate (wafer) by using a semiconductor process. For each electrode, an Au bump 1 is formed on the surface of the electrode by electroplating or ball bonding.
4 is formed. This wafer is cut by high-precision dicing technology to obtain an image sensor chip 3 composed of semiconductor elements.
make.

【0013】厚み10μm〜200μmのポリエーテル
サルフォン(PES)、ポリエーテルイミド(PE
I)、ポリカーボネート(PC)、ポリアリレート(P
A)、ポリエーテルエーテルケトン(PEEK)または
ポリエチレンテレフタレート(PET)等の透光性基板
1の表裏両面上に、金または銅等の金属を、蒸着法また
はスパッタリング法、または箔等を用いて厚さ2μm〜
20μmに形成し、後にフォトリソグラフィ法によって
表裏両面の回路導体層2及びそれと同一層の裏面遮光層
8及び表面遮光層10を形成する。その際、透光性基板
1の表面側に0.1〜0.7mmの第2スリット16を
形成するとともに、裏面側に0.05〜0.5mmの第
1スリット15を形成する。その後、これら回路導体層
2、裏面遮光層8及び表面遮光層10の表面上を半田メ
ッキする。
Polyethersulfone (PES) and polyetherimide (PE) having a thickness of 10 μm to 200 μm
I), polycarbonate (PC), polyarylate (P
A), polyetheretherketone (PEEK), polyethylene terephthalate (PET), or other transparent substrate 1 on both front and back surfaces of a metal such as gold or copper by vapor deposition, sputtering, or foil. 2 μm
Then, the circuit conductor layers 2 on both the front and back surfaces, and the back light-shielding layer 8 and the front light-shielding layer 10 which are the same layer as the circuit conductor layers 2 are formed by photolithography. At that time, the second slit 16 of 0.1 to 0.7 mm is formed on the front surface side of the translucent substrate 1, and the first slit 15 of 0.05 to 0.5 mm is formed on the back surface side. Then, the surfaces of the circuit conductor layer 2, the back surface light-shielding layer 8 and the front surface light-shielding layer 10 are solder-plated.

【0014】さらに、透光性基板1の裏面(原稿密着
面)の全面に、シート抵抗109 Ω/□以下の耐静電気
性及び耐摩耗性を有するようにパラジウム、酸化インジ
ウム及び酸化スズ等の導電粒子を混入したウレタンアク
リレート系等の鉛筆硬度3H〜8Hで、厚み10μm〜
30μm程度の透明導電膜9を設ける。このように裏面
遮光層8を設けることにより、光源12からの光の透明
導電膜9裏面(原稿密着面)での反射による不必要な光
(迷光)を消去することができ、また透光性基板1が薄
いことと第1スリット15を設けることにより、光のク
ロストークを防ぐことができる。
Further, palladium, indium oxide, tin oxide or the like is formed on the entire rear surface (original contact surface) of the transparent substrate 1 so as to have static resistance and abrasion resistance of 10 9 Ω / □ or less. Pencil hardness of 3H to 8H such as urethane acrylate containing conductive particles, thickness of 10 μm
A transparent conductive film 9 having a thickness of about 30 μm is provided. By providing the back surface light-shielding layer 8 in this manner, unnecessary light (stray light) due to reflection of light from the light source 12 on the back surface (original contact surface) of the transparent conductive film 9 can be erased, and the light transmitting property can be eliminated. By making the substrate 1 thin and providing the first slit 15, crosstalk of light can be prevented.

【0015】この透光性基板1の表面上の所定の位置
に、アクリレート系の光熱併用硬化型透明絶縁樹脂5を
スタンピング法またはスクリーン印刷法等で所定量塗布
し、その上にイメージセンサチップ3をそのAuバンプ
14が所定の回路導体層2上に設けられた半田メッキに
当接するようにフェイスダウンで配置する。その後、こ
のイメージセンサチップ3の上方から圧力を加えなが
ら、光熱併用硬化型透明絶縁樹脂5に透光性基板1を通
して紫外線照射をし、硬化させる。さらにこれを電気炉
の中にいれ、半田メッキの融点(170〜190℃)ま
たは光熱併用硬化型透明絶縁樹脂5の硬化温度より高い
温度(100℃以上)の炉に一定時間(5分〜20分)
熱処理をして、半田メッキ3を溶かすと共に、回路導体
層2で影になり硬化が完了していない光熱併用硬化型透
明絶縁樹脂5を完全に硬化させて実装を完了する。イメ
ージセンサチップ3を透光性基板1へ実装するための光
熱併用硬化型透明絶縁樹脂5としては、アクリレート
系、ウレタンアクリレート系、あるいはエポキシアクリ
レート系の光熱併用硬化型透明絶縁樹脂が接着性、光感
度の点から好適である。
At a predetermined position on the surface of the light-transmissive substrate 1, a predetermined amount of an acrylate-based light-heat-curable transparent insulating resin 5 is applied by a stamping method or a screen printing method, and the image sensor chip 3 is applied thereon. Is placed face down so that the Au bumps 14 come into contact with the solder plating provided on the predetermined circuit conductor layer 2. Thereafter, while applying pressure from above the image sensor chip 3, ultraviolet rays are irradiated through the light-transmissive substrate 1 to the light-heat combined curing type transparent insulating resin 5 to be cured. Further, this is put in an electric furnace and placed in a furnace having a melting point of solder plating (170 to 190 ° C.) or a temperature higher than the curing temperature of the light-heat-curable transparent insulating resin 5 (100 ° C. or higher) for a certain time (5 minutes to 20 minutes) Minutes)
The heat treatment is performed to melt the solder plating 3, and the photothermal combined curing type transparent insulating resin 5 which is shaded by the circuit conductor layer 2 and which is not completely cured is completely cured to complete the mounting. As the photothermal combined curable transparent insulating resin 5 for mounting the image sensor chip 3 on the translucent substrate 1, an acrylate-based, urethane acrylate-based or epoxy acrylate-based photothermal combined curable transparent insulating resin is used for adhesion and light It is preferable in terms of sensitivity.

【0016】その後、透光性基板1の表面(半導体素子
実装面)上のイメージセンサチップ3の実装部及び光路
部及び半田接合部以外の場所に接着剤19を塗布し、加
圧をかけて透光性基板1の表面(半導体素子実装面)と
補強板18とを平面性よく接着し、さらにイメージセン
サチップ3を保護するためにその上から補強板18の窓
内に、透明シリコーンや透明アクリレート系等の透明樹
脂をディスペンサー等で均一に塗布し、硬化後の高さ2
mm以下、屈折率1.6以下、硬化後鉛筆硬度2H〜8
Hの透明保護層6を形成する。この際、接着剤19で補
強板18と透光性基板1を十分に接着することによっ
て、透明樹脂(透明保護層6)が周りにはみ出ないよう
にする。このように作成された完全密着型イメージセン
サでは、イメージセンサチップ3を樹脂で固定すると同
時に、電極4を導体回路層2に半田により電気的に確実
に接続できるので、信頼性が高く、かつ簡単、短時間、
低コストで製造することが出来る。
After that, the adhesive 19 is applied to the surface of the translucent substrate 1 (semiconductor element mounting surface) other than the mounting portion of the image sensor chip 3, the optical path portion and the solder joint portion, and pressure is applied. The surface of the translucent substrate 1 (semiconductor element mounting surface) and the reinforcing plate 18 are adhered to each other with good planarity, and in order to protect the image sensor chip 3, a transparent silicone or a transparent material is placed in the window of the reinforcing plate 18 from above. A transparent resin such as acrylate is evenly applied with a dispenser and the height after curing is 2
mm or less, refractive index 1.6 or less, pencil hardness after curing 2H to 8
A transparent protective layer 6 of H is formed. At this time, the transparent resin (transparent protective layer 6) is prevented from squeezing out by sufficiently adhering the reinforcing plate 18 and the translucent substrate 1 with the adhesive 19. In the perfect contact type image sensor thus created, the image sensor chip 3 is fixed with resin, and at the same time, the electrode 4 can be electrically and reliably connected to the conductor circuit layer 2 by soldering, which is highly reliable and easy. , Short time,
It can be manufactured at low cost.

【0017】導電性搬送ローラー12はシート抵抗10
5 Ω/□以下のカーボンブラックやアセチレンブラック
や酸化亜鉛または酸化スズなどの導電性附与物質をポリ
ウレタンやシリコーンゴム等のエラストマー基材に配合
した導電性ゴムを使用し、搬送ローラーと金属部分とを
アース接続することによって、原稿が擦れることによっ
て生じる静電気を消滅させ、ノイズを低減するようにし
ている。
The conductive transport roller 12 has a sheet resistance of 10.
Using conductive rubber in which an electrically conductive additive such as carbon black or acetylene black of 5 Ω / □ or less, zinc oxide or tin oxide is mixed with an elastomer base material such as polyurethane or silicone rubber By connecting the to the ground, the static electricity generated by rubbing the document is eliminated and noise is reduced.

【0018】以上の完全密着型イメージセンサにおいて
は、その透光性基板1の裏面にある導電透明膜9を原稿
密着面とし、上方から光源12により透明保護層6、光
熱併用硬化型透明絶縁樹脂5、透光性基板1及び導電透
明膜9を通して原稿11を光照射することにより、原稿
11からの光情報が導電透明膜9、透光性基板1及び光
熱併用硬化型透明絶縁樹脂5を通して受光素子アレイ7
へ直接導かれ、原稿の情報を読み取ることができる。
In the above complete contact type image sensor, the conductive transparent film 9 on the back surface of the translucent substrate 1 is used as the original contact surface, and the transparent protective layer 6 and the light / heat combined curing type transparent insulating resin are applied from above by the light source 12. 5, by irradiating the original 11 with light through the transparent substrate 1 and the conductive transparent film 9, the optical information from the original 11 is received through the conductive transparent film 9, the transparent substrate 1, and the photothermal combined curing type transparent insulating resin 5. Element array 7
You can read the information on the original directly.

【0019】また、光源12からの光の原稿搬送方向か
らの入射角17をイメージセンサチップ3の真上(入射
角0度)から30度までとし、照明された原稿11から
の反射光を透光性基板1の表面に設けられたイメージセ
ンサチップ3に導くことにより、原稿11からの光情報
をレンズ系なしに、かつ光のクロストークなく高分解能
で読み取ることができる(MTF値50%(4lp/m
m))と同時に、完全密着型イメージセンサ自身のサイ
ズを飛躍的に小さくすることができる。また、透光性基
板1の裏面に導電透明膜9を当接させこれをアースする
ことにより、耐静電気性と耐摩耗性とを向上させること
ができる。
Further, the incident angle 17 of the light from the light source 12 from the document conveying direction is set to 30 degrees from directly above the image sensor chip 3 (incident angle 0 degree), and the reflected light from the illuminated original 11 is transmitted. By guiding the light to the image sensor chip 3 provided on the surface of the optical substrate 1, the optical information from the original 11 can be read at a high resolution without a lens system and with no crosstalk of light (MTF value 50% ( 4 lp / m
m)) At the same time, the size of the perfect contact image sensor itself can be dramatically reduced. Further, by bringing the conductive transparent film 9 into contact with the back surface of the transparent substrate 1 and grounding the conductive transparent film 9, it is possible to improve the electrostatic resistance and abrasion resistance.

【0020】以上の様な構成により、画像読み取りのS
/N比、分解能、光の転送効率を高水準で維持でき、ノ
イズを低減でき、原稿からの光情報をレンズ系なしに光
のクロストークなく高分解能で読み取ることができる。
さらに、従来のレンズ系を使うより光の転送効率が4〜
5倍程度になり、光源(LEDアレイ)のコスト低減に
も寄与できる。
With the above configuration, the S for image reading is read.
The / N ratio, resolution, and light transfer efficiency can be maintained at a high level, noise can be reduced, and light information from a document can be read at high resolution without crosstalk of light without a lens system.
In addition, the light transfer efficiency is 4 to 4 compared with the conventional lens system.
It is about 5 times, which can contribute to the cost reduction of the light source (LED array).

【0021】なお、上記実施例では、透光性基板1の表
裏両面に回路導体層2を形成するとともにスルホールを
介して両面配線の回路導体層を設け、裏面遮光層8も回
路導体層2と同一層にて形成した例を示したが、回路導
体層2を透光性基板1の表面にのみ形成し、透光性基板
1の裏面の裏面遮光層8は導電性の遮光層にて構成して
もよい。
In the above embodiment, the circuit conductor layers 2 are formed on both front and back surfaces of the translucent substrate 1, double-sided circuit conductor layers are provided through the through holes, and the back surface light-shielding layer 8 also serves as the circuit conductor layer 2. Although the example in which the circuit conductor layer 2 is formed of the same layer is shown, the circuit conductor layer 2 is formed only on the front surface of the transparent substrate 1, and the back surface light shielding layer 8 on the back surface of the transparent substrate 1 is formed of a conductive light shielding layer. You may.

【0022】[0022]

【発明の効果】本発明によれば、以上のように透光性基
板の裏面と透明導電膜との間及び透光性基板の表面にそ
れぞれ遮光層を形成して第1スリットと第2スリットを
設けているので、光のクロストークや迷光の発生を防止
することができ、かつ透光性基板裏面の遮光層が導電遮
光層または回路導体層と同一層から成るので耐静電気性
を向上することができる。又、回路導体層と遮光層を同
一工程、同一マスクで形成することにより、光の光路を
精度よく確保でき、読み取りの際の光のクロストーク及
び迷光をさらに無くすことができる。従って、本発明に
より感度ばらつきが小さく、画像読み取りのS/N比、
分解能、および光の転送効率の高い、高性能で高信頼性
の完全密着型イメージセンサを実現できる。
As described above, according to the present invention, the light-shielding layer is formed between the back surface of the transparent substrate and the transparent conductive film and on the surface of the transparent substrate as described above, and the first slit and the second slit are formed. Since it is provided, it is possible to prevent the occurrence of light crosstalk and stray light, and improve the electrostatic resistance because the light-shielding layer on the back surface of the transparent substrate is made of the same layer as the conductive light-shielding layer or the circuit conductor layer. be able to. Further, by forming the circuit conductor layer and the light-shielding layer in the same step and in the same mask, the optical path of the light can be secured with high accuracy, and the crosstalk and stray light of the light at the time of reading can be further eliminated. Therefore, according to the present invention, the sensitivity variation is small, the S / N ratio of image reading,
It is possible to realize a high performance and highly reliable perfect contact image sensor having high resolution and high light transfer efficiency.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例における完全密着型イメージ
センサの断面図である。
FIG. 1 is a sectional view of a perfect contact type image sensor according to an embodiment of the present invention.

【図2】従来例の完全密着型イメージセンサの断面図で
ある。
FIG. 2 is a sectional view of a conventional full-contact image sensor.

【符号の説明】[Explanation of symbols]

1 透光性基板 2 回路導体層 3 イメージセンサチップ(半導体素子) 4 電極 5 光熱併用硬化型透明絶縁樹脂 6 透明保護層 7 受光素子アレイ 8 裏面遮光層 9 透明導電膜 10 表面遮光層 15 第1スリット 16 第2スリット 1 Translucent Substrate 2 Circuit Conductor Layer 3 Image Sensor Chip (Semiconductor Element) 4 Electrode 5 Photothermal Combined Curing Transparent Insulating Resin 6 Transparent Protective Layer 7 Photoreceptor Array 8 Backside Light-shielding Layer 9 Transparent Conductive Film 10 Surface Light-shielding Layer 15 1st Slit 16 Second slit

───────────────────────────────────────────────────── フロントページの続き (72)発明者 藤原 愼司 大阪府門真市大字門真1006番地 松下電器 産業株式会社内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Shinji Fujiwara 1006 Kadoma, Kadoma City, Osaka Prefecture Matsushita Electric Industrial Co., Ltd.

Claims (6)

【特許請求の範囲】[Claims] 【請求項1】 表面上に回路導体層を形成した透光性基
板と、透光性基板の表面上に光熱併用硬化型透明絶縁樹
脂を介して実装した受光素子アレイを有する半導体素子
と、半導体素子を保護する透明保護層とを備えた完全密
着型イメージセンサにおいて、透光性基板の裏面におい
て受光素子アレイに対向する部分と光を透過する第1ス
リットとなる部分とを除いて導電性の遮光層を形成し、
その上に透光性基板裏面全面にわたって導電透明膜を形
成し、透光性基板の表面において受光素子アレイに対向
する部分と光を透過する第2スリットとなる部分とを除
いて回路導体層と同一層から成る遮光層を形成したこと
を特徴とする完全密着型イメージセンサ。
1. A semiconductor element having a light-transmissive substrate having a circuit conductor layer formed on the surface thereof, and a light-receiving element array mounted on the surface of the light-transmissive substrate via a photo-thermosetting curable transparent insulating resin, and a semiconductor. In a perfect contact image sensor having a transparent protective layer for protecting elements, a conductive substrate is provided except for a portion of the back surface of the transparent substrate facing the light receiving element array and a portion serving as a first slit for transmitting light. Forming a light shielding layer,
A conductive transparent film is formed on the entire back surface of the transparent substrate, and a circuit conductor layer is formed on the surface of the transparent substrate except a portion facing the light receiving element array and a portion serving as a second slit that transmits light. A complete contact type image sensor having a light-shielding layer formed of the same layer.
【請求項2】 透光性基板の表裏両面に回路導体層を形
成するとともにスルホールを形成して両面配線の回路導
体層を設け、透光性基板の表面上に光熱併用硬化型透明
絶縁樹脂を介して受光素子アレイを有する半導体素子を
実装し、半導体素子上を透明保護層にて覆い、透光性基
板の裏面において受光素子アレイに対向する部分と光を
透過する第1スリットとなる部分とを除いて回路導体層
と同一層から成る遮光層を形成し、その上に透光性基板
の裏面全面にわたって導電透明膜を形成し、透光性基板
の表面において受光素子アレイに対向する部分と光を透
過する第2スリットとなる部分とを除いて回路導体層と
同一層から成る遮光層を形成したことを特徴とする完全
密着型イメージセンサ。
2. A circuit conductor layer for double-sided wiring is provided by forming circuit conductor layers on both front and back surfaces of a transparent substrate, and a circuit conductor layer for double-sided wiring is provided, and a light-heat-curable transparent insulating resin is provided on the surface of the transparent substrate. A semiconductor element having a light-receiving element array is mounted therethrough, the semiconductor element is covered with a transparent protective layer, and a portion of the back surface of the transparent substrate facing the light-receiving element array and a portion serving as a first slit for transmitting light are formed. Except for forming a light-shielding layer consisting of the same layer as the circuit conductor layer, a conductive transparent film is formed over the entire back surface of the light-transmissive substrate, and a portion facing the light-receiving element array is formed on the front surface of the light-transmissive substrate. A perfect contact type image sensor, characterized in that a light shielding layer made of the same layer as the circuit conductor layer is formed except for a portion which becomes a second slit which transmits light.
【請求項3】 第1スリットの幅を0.05〜0.5m
mとしたことを特徴とする請求項1又は2記載の完全密
着型イメージセンサ。
3. The width of the first slit is 0.05 to 0.5 m.
The perfect contact type image sensor according to claim 1 or 2, wherein m is m.
【請求項4】 第2スリットの幅を0.1〜0.7mm
としたことを特徴とする請求項1又は2記載の完全密着
型イメージセンサ。
4. The width of the second slit is 0.1 to 0.7 mm.
The perfect contact type image sensor according to claim 1 or 2, characterized in that.
【請求項5】 請求項1記載の完全密着型イメージセン
サの製造工程において、透光性基板の表面上に金または
銅等の金属層を蒸着法またはスパッタリング法または箔
等を用いて厚さ2μm〜35μmに形成し、その後フォ
トリソグラフィ法によって回路導体層及び遮光層を同一
工程、同一マスクで形成することを特徴とする完全密着
型イメージセンサの製造方法。
5. The process of manufacturing the perfect contact image sensor according to claim 1, wherein a metal layer such as gold or copper is formed on the surface of the translucent substrate to a thickness of 2 μm by vapor deposition, sputtering or foil. To 35 μm, and thereafter, the circuit conductor layer and the light shielding layer are formed by the same process and the same mask by the photolithography method.
【請求項6】 請求項2記載の完全密着型イメージセン
サの製造工程において、透光性基板の表裏両面上に金ま
たは銅等の金属層を蒸着法またはスパッタリング法また
は箔等を用いて厚さ2μm〜35μmに形成し、その後
フォトリソグラフィ法によって両面の回路導体層及び遮
光層を同一工程、同一マスクで形成することを特徴とす
る完全密着型イメージセンサの製造方法。
6. The process of manufacturing the perfect contact type image sensor according to claim 2, wherein a metal layer such as gold or copper is formed on both the front and back surfaces of the translucent substrate by vapor deposition, sputtering or foil. A method for manufacturing a perfect contact type image sensor, which comprises forming the film to have a thickness of 2 μm to 35 μm, and then forming the circuit conductor layers and the light shielding layers on both surfaces by the same process and the same mask by a photolithography method.
JP5138225A 1992-10-23 1993-06-10 Full contact type image sensor and its manufacture Pending JPH06350066A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP5138225A JPH06350066A (en) 1993-06-10 1993-06-10 Full contact type image sensor and its manufacture
KR1019930021755A KR0137398B1 (en) 1992-10-23 1993-10-20 Fabrication method of sensor & unit
US08/141,328 US5477047A (en) 1992-10-23 1993-10-21 Direct-contact type image sensor device, an image sensor unit, and methods for producing the same
DE69327440T DE69327440T2 (en) 1992-10-23 1993-10-22 Direct contact image sensor, an image sensor unit and method for the production thereof
EP93117154A EP0594195B1 (en) 1992-10-23 1993-10-22 A direct-contact type image sensor device, an image sensor unit, and methods for producing the same
US08/351,020 US5556809A (en) 1992-10-23 1994-12-07 Direct-contact type image sensor device, an image sensor unit, and methods for producing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5138225A JPH06350066A (en) 1993-06-10 1993-06-10 Full contact type image sensor and its manufacture

Publications (1)

Publication Number Publication Date
JPH06350066A true JPH06350066A (en) 1994-12-22

Family

ID=15217019

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5138225A Pending JPH06350066A (en) 1992-10-23 1993-06-10 Full contact type image sensor and its manufacture

Country Status (1)

Country Link
JP (1) JPH06350066A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003060114A (en) * 2001-08-17 2003-02-28 Sony Corp Semiconductor device and solid-state image pickup device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003060114A (en) * 2001-08-17 2003-02-28 Sony Corp Semiconductor device and solid-state image pickup device

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