JPH0548826A - Complete contact type image sensor and unit - Google Patents

Abstract

PURPOSE:To provide a complete contact type image sensor unit of high performance which improves the antistatic property and the wear resistance and keeps the resolution of image read and the transfer efficiency of light. CONSTITUTION:A semiconductor image sensor chip 3 which has a light- transmissive substrate 1, a circuit conductor layer 2 is formed on its surface, and has a photodetector 7 and a scanning circuit 8 on the surface of the light- transmissive substrate 1 through a light-transmissive insulating resin 5 hardened by light is placed facedown so that a taking-out electrode 4 formed on the semiconductor image sensor chip 3 is brought into contact with the circuit conductor layer 2, and a transparent conductor layer 9 is provided on the light- transmissive substrate 1 in the position where the photodetector 7 and the scanning circuit 8 are abutted on each other, and a light-transmissive insulating layer 10 or the other transparent conductor layer is abutted on the rear face of the light-transmissive substrate 1 and is used as the document contact face, and a document 11 is illuminated from above by a light source (LED array) 12 and is read.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a perfect contact image sensor and a perfect contact image sensor unit for converting an optical image into an electric signal.

[0002]

2. Description of the Related Art A conventional perfect contact type image sensor unit has a transparent substrate 41 having a circuit conductor layer 42 formed on the surface thereof as shown in FIG. 3, and a transparent substrate 41 having a transparent surface. A semiconductor image sensor chip 43 having a light receiving element 47 and a scanning circuit 48 mounted via a photo-curing insulating resin 45 is provided, and the semiconductor image sensor chip 43 is formed face down on the semiconductor image sensor chip 43. The extraction electrode 44 has a structure in which it contacts the circuit conductor layer 42.
It had a structure in which the back side of was in direct contact with the original side.

[0003]

However, in the above-mentioned structure, since the back surface of the transparent substrate is in direct contact with the original surface, the transparent substrate is worn due to the passage of tens of thousands of originals. Then, there is a problem that the MTF and the sensitivity are lowered, and that the static electricity damages the semiconductor element brought into contact with the transparent substrate.

[0004]

In order to solve the above-mentioned problems, a perfect contact type image sensor unit of the present invention is provided with a back surface of a transparent substrate so that the back surface of the transparent substrate does not directly contact the original surface. Wear resistance is provided by providing a transparent insulating layer or a transparent conductor layer between the manuscript and the transparent conductor layer on the transparent substrate at the position where the light receiving element and the scanning circuit are in contact. By providing it, a perfect contact type image sensor unit having a mechanism for providing electrostatic resistance is created.

[0005]

The present invention has the above-mentioned structure to improve wear resistance by providing a transparent insulating layer, and improve static resistance and wear resistance by using a transparent insulating layer or a transparent conductor layer. , Image reading resolution, resolution,
Also, a high-performance perfect contact image sensor unit that maintains the light transfer efficiency is realized.

[0006]

DESCRIPTION OF THE PREFERRED EMBODIMENTS A perfect contact type image sensor unit according to an embodiment of the present invention will be described below with reference to the drawings.

FIG. 1 is a front sectional view of a perfect contact type image sensor unit in the embodiment of the first invention.

Reference numeral 1 is a transparent substrate, 2 is a circuit conductor layer formed on the surface of the transparent substrate 1, 3 is an image sensor chip used as a semiconductor element, and 4 is an image sensor chip 3.
, 5 is a transparent photo-curable insulating resin for mounting the semiconductor image sensor chip 3 on the translucent substrate 1, 6 is a transparent protective layer for protecting the semiconductor image sensor chip 3, and 7 is The light receiving element provided on the semiconductor image sensor chip 3 is provided on the translucent substrate at a location where the scanning circuit, the light receiving element 7 and the scanning circuit 8 provided on the semiconductor image sensor chip 3 are in contact. The transparent conductor layers 10 are transparent insulating layers on the back surface of the transparent substrate 1, which are in contact with the original 11. 11 is a manuscript to be read, 1
Reference numeral 2 is a light source (LED array) for illuminating the original document 11.
Is Laura.

Next, the details of the perfect contact type image sensor unit constructed as described above will be described in more detail.

A metal such as gold or copper is vapor-deposited on the surface of the transparent substrate 1 such as polyarylate (PA), polyether sulfone (PES) or polyethylene terephthalate (PET) having a thickness of 25 μm to 200 μm. A thickness of 3 μm to 20 μm is formed in advance by using a sputtering method or a foil, and a circuit conductor layer 2 is formed later by a photolithography method, and a thickness of 3 μm to 20 μm is formed on a place where the light receiving element 7 and the scanning circuit 8 are in contact. The transparent conductor film 9 is formed. An acrylate-based transparent photo-curable insulating resin 5 is applied to a predetermined position of the light-transmissive substrate 1 by a predetermined amount by a stamping method, a screen printing method or the like, and a semiconductor image sensor chip 3 and an electrode 4 having a predetermined electrode 4 are applied thereon. It is arranged face down so as to contact the circuit conductor layer 2. After that, while applying a predetermined pressure from above the semiconductor image sensor chip 3,
The transparent photocurable insulating resin 5 is irradiated with ultraviolet rays through the translucent substrate 1 to be cured and the mounting is completed. Further, a resin such as transparent silicone is applied from above with a dispenser or the like to form the transparent protective layer 6.

In the perfect contact type image sensor unit, the transparent insulating layer 10 on the rear surface of the transparent substrate 1 of the perfect contact type image sensor is used as the original contact surface, and the transparent protective layer 6 and the transparent protective layer 6 are transparent by the LED array from above. Photocurable insulating resin 5, transparent conductor layer 9, translucent substrate 1 and transparent insulating layer 1
The original is illuminated through 0, and the optical information from the original is directly guided to the light receiving element 7 through the transparent insulating layer 10, the transparent substrate 1, the transparent conductor layer 9 and the transparent photocurable insulating resin 5. , To read the information on the document.

As the transparent photo-curable insulating resin 5, urethane acrylate-based or epoxy acrylate-based UV-curable resin is preferable from the viewpoint of adhesiveness and photosensitivity.

The transparent substrate 1 has a thickness of 20 μm to 200 μm.
A urethane arylate-based material in which conductive fine particles such as palladium, indium oxide and tin are mixed so that the transparent conductor layer 9 has a thickness of about 10 μm to 100 μm and has electrostatic resistance and abrasion resistance using a thin polyarylate film of about μm. And the like, and the total thickness of the transparent substrate and the transparent conductor layer is 25 μm to 200 μm.
When m is set, optical information from the original can be read at high resolution without a crosstalk of the light without a lens system (MT
At the same time as the F value of 50% (4 lp / mm), the size of the image sensor unit itself could be dramatically reduced.

Further, a transparent conductor layer 9 is provided on the translucent substrate at a position where the light receiving element 7 and the scanning circuit 8 are brought into contact with each other, and the transparent conductor layer 9 is grounded to eliminate static electricity generated by rubbing the original. It is possible to reduce noise. Further, the light transfer efficiency is about 2-3 times higher than that of the conventional lens system, which contributes to the cost reduction of the light source (LED array).

The transparent insulating layer 10 is formed by spraying, printing or painting a transparent resin such as nylon resin, crosslinked nylon resin, urethane resin, crosslinked urethane resin or urethane copolymer resin to form a thin film. obtain. Further, a multi-layer of each of the above resins may be used.

FIG. 2 is a front sectional view of a perfect contact type image sensor unit in the embodiment of the second invention.

In the embodiment of the first invention, the transparent substrate 1
A transparent insulating layer was provided between the back of the document and the manuscript 11.
In the embodiment of the second invention, the back surface of the transparent substrate 1 and the original 1
1 and a transparent conductor layer is provided between

[0018]

As described above, the perfect contact type image sensor unit of the present invention has abrasion resistance by providing the transparent conductor layer or the transparent insulating layer between the document surface and the transparent substrate. By providing the transparent conductor layer on the transparent substrate at the position where the light receiving element and the scanning circuit are in contact,
The electrostatic resistance is improved, the resolution of image reading, the resolution, and the light transfer efficiency can be maintained at a high level, and the original can be read very simply, compactly, and at low cost.

[Brief description of drawings]

FIG. 1 is a front sectional view of a perfect contact type image sensor unit in an embodiment of the first invention.

FIG. 2 is a front sectional view of a perfect contact type image sensor unit according to an embodiment of the second invention.

FIG. 3 is a schematic front sectional view of a conventional full contact image sensor unit.

[Explanation of symbols]

 1 Translucent Substrate 2 Circuit Conductor Layer 3 Semiconductor Image Sensor Chip 4 Electrode 5 Transparent Light Curing Insulating Resin 6 Transparent Protective Layer 7 Light-Receiving Element 8 Scanning Circuit 9 Transparent Conductor Layer 10 Transparent Insulating Layer 11 Original 12 Light Source (LED Array) 13 roller 21 translucent substrate 22 circuit conductor layer 23 semiconductor image sensor chip 24 electrode 25 transparent photocurable insulating resin 26 transparent protective layer 27 light receiving element 28 scanning circuit 29 transparent conductor layer 30 transparent conductor layer 31 original document 32 light source ( LED array) 33 roller 41 translucent substrate 42 circuit conductor layer 43 semiconductor image sensor chip 44 electrode 45 transparent photocurable insulating resin 46 transparent protective layer 47 light receiving element 48 scanning circuit 49 original 50 light source (LED array) 51 roller

Claims (3)

[Claims] 1. A semiconductor device having a transparent substrate having a circuit conductor layer formed on the surface thereof, and a light receiving element and a scanning circuit mounted on the surface of the transparent substrate via a transparent photocurable insulating resin. And a structure in which the semiconductor element is face-down, and the extraction electrode formed on the semiconductor element is in contact with the circuit conductor layer. A perfect contact type image sensor in which a transparent conductor layer is provided on a transparent substrate, and a transparent insulating layer is provided on the back surface of the transparent substrate. 2. A semiconductor element having a light-transmissive substrate having a circuit conductor layer formed on the surface thereof, and a light-receiving element and a scanning circuit mounted on the surface of the light-transmissive substrate via a transparent photocurable insulating resin. And a structure in which the semiconductor element is face-down, and the extraction electrode formed on the semiconductor element is in contact with the circuit conductor layer. A perfect contact image sensor in which a transparent conductor layer is provided on a transparent substrate, and a transparent conductor layer is provided on the back surface of the transparent substrate. 3. The complete contact type image sensor according to claim 1, wherein an original which illuminates a surface of the original from near the semiconductor is mounted on the side of the transparent substrate on which the semiconductor is mounted. A complete contact image sensor unit with the other surface of the substrate as the original contact surface.