JPH0231867B2 - - Google Patents
Info
- Publication number
- JPH0231867B2 JPH0231867B2 JP57194093A JP19409382A JPH0231867B2 JP H0231867 B2 JPH0231867 B2 JP H0231867B2 JP 57194093 A JP57194093 A JP 57194093A JP 19409382 A JP19409382 A JP 19409382A JP H0231867 B2 JPH0231867 B2 JP H0231867B2
- Authority
- JP
- Japan
- Prior art keywords
- mask
- light
- film
- substrate
- adhesive
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000000758 substrate Substances 0.000 claims description 17
- 239000000853 adhesive Substances 0.000 claims description 10
- 230000001070 adhesive effect Effects 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 claims description 2
- 238000003825 pressing Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 1
- 230000003287 optical effect Effects 0.000 claims 1
- 239000010408 film Substances 0.000 description 22
- 239000012790 adhesive layer Substances 0.000 description 5
- 239000012535 impurity Substances 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02327—Optical elements or arrangements associated with the device the optical elements being integrated or being directly associated to the device, e.g. back reflectors
Description
【発明の詳細な説明】
産業上の利用分野
近年、高密度に光検知素子を配置させたアレイ
は、フアクシミリ用のイメージセンサや、ビデオ
テープレコーダ等に用いられる回転方向および回
転速度検出器に応用されている。[Detailed Description of the Invention] Industrial Application Fields In recent years, arrays in which photodetecting elements are arranged at high density have been applied to image sensors for facsimile machines and rotational direction and rotational speed detectors used in video tape recorders, etc. has been done.
本発明は、この種の高密度に配置された光検知
素子のアレイ用の基板に関するものである。 The present invention relates to a substrate for such a densely arranged array of photodetecting elements.
従来例の構成とその問題点
第１図は、高密度に配置された従来の光検知素
子のアレイの断面図である。１は絶縁性基板、例
えばガラス板であり、その上にNiまたはCr等の
金属２を光検知素子の数だけ分離して蒸着されて
いる。その上に光導電膜、例えば非晶質水素化シ
リコン膜３を堆積させた後、ITO（インジウムテ
ンオキサイド）のような透明電極４を蒸着させ
る。透明電極４は、分離しても良いし、光導電膜
３のほぼ全面に連続して蒸着させても良い。この
ような断面を持つ素子に外部電極５，６を設け
る。Configuration of Conventional Example and Its Problems FIG. 1 is a cross-sectional view of a conventional array of photodetecting elements arranged at high density. Reference numeral 1 denotes an insulating substrate, for example a glass plate, on which metals 2 such as Ni or Cr are deposited separately in the number of photodetecting elements. After depositing a photoconductive film, for example an amorphous hydrogenated silicon film 3 thereon, a transparent electrode 4 such as ITO (indium thene oxide) is deposited. The transparent electrode 4 may be separated or may be continuously deposited over almost the entire surface of the photoconductive film 3. External electrodes 5 and 6 are provided on the element having such a cross section.
光導電膜３にバイアスを印加する電源７を接続
させて、光８を照射すると、電極５と電極６の間
で電流が流れる。電極６は、高密度に配置されて
いるので、光８の当たる部分と影になる部分とを
細かい精度で分離することができる。この原理に
よつて紙に書かれた文字を読み取るフアクシミリ
のイメージセンサやテープ走行モータの回転方向
やその速度を適当なマスクを用いて正確に検知す
る素子等に使用されてきた。 When a power source 7 that applies a bias is connected to the photoconductive film 3 and light 8 is irradiated, a current flows between the electrodes 5 and 6. Since the electrodes 6 are arranged at a high density, it is possible to separate the portions that are exposed to the light 8 and the portions that are in shadow with fine precision. This principle has been used in facsimile image sensors that read characters written on paper, and elements that accurately detect the rotational direction and speed of tape running motors using appropriate masks.
上記のような構成の光検知素は、以下に述べる
ような欠点を有していた。 The photodetector element having the above configuration had the following drawbacks.
すなわち、素子表面電極として用いる透明電極
４は、機械的強度が小さいため、短絡しやすい。
また、光の検知は、光導電膜３を用いているの
で、外部回路にバイアスを印加する電源７が必要
である。さらに最大の欠点として、バイアスを電
極４にかけているためと、衝撃によつて電気的に
短絡しやすいため、第２図に示すように、電極４
上に保護膜９を形成させなければならない。しか
し、高密度に分離された下地電極２に光が到達す
るまでに、回転させるマスク１０、およびマスク
１０と保護膜９とのすき間１１、保護膜９、光導
電膜３とその電極８を通過させなければならな
い。マスク１０から光が斜めに入射すると、所定
の下地電極以外の電極に照射され、信号対雑音比
（Ｓ／Ｎ比）が低下する。 That is, the transparent electrode 4 used as the element surface electrode has low mechanical strength and is therefore easily short-circuited.
Furthermore, since the photoconductive film 3 is used for light detection, a power source 7 is required to apply a bias to an external circuit. Furthermore, the biggest drawback is that because a bias is applied to the electrode 4, and because it is easy to electrically short circuit due to impact, the electrode 4
A protective film 9 must be formed thereon. However, the light passes through the rotating mask 10, the gap 11 between the mask 10 and the protective film 9, the protective film 9, the photoconductive film 3, and its electrode 8 before reaching the base electrode 2, which is separated at high density. I have to let it happen. When light obliquely enters from the mask 10, electrodes other than the predetermined base electrode are irradiated, and the signal-to-noise ratio (S/N ratio) decreases.
発明の目的
本発明は、上記問題点を軽減し、S/N比が大き
くとれる光検知素子の高密度アレイを与える基板
を提供することを目的とする。OBJECTS OF THE INVENTION It is an object of the present invention to provide a substrate that alleviates the above-mentioned problems and provides a high-density array of photodetecting elements with a high signal-to-noise ratio.
発明の構成
本発明の基板は、所定範囲の波長の光を透過す
る絶縁性の基板と、前記の光を透過させない材料
からなり穴を有するマスクと、前記光を透過する
材料からなり、前記絶縁性基板とマスクとを接着
するとともに前記マスクの穴の部分で凸部を有す
る接着層とを備えるものである。また、この基板
は、前記の接着剤を塗布した絶縁基板上に接着剤
未硬化の状態で所定の圧力でマスクを押しつけ、
接着剤がマスクの穴内に凸状にはみ出させること
によつて製造することができる。Structure of the Invention The substrate of the present invention comprises an insulating substrate that transmits light of a wavelength within a predetermined range, a mask that is made of a material that does not transmit the light and has holes, and a mask that is made of a material that transmits the light and that is insulating. The adhesive layer adheres the adhesive substrate and the mask and has a convex portion in the hole portion of the mask. In addition, this substrate is prepared by pressing a mask with a predetermined pressure on an insulating substrate coated with the adhesive, with the adhesive not yet cured.
It can be manufactured by allowing the adhesive to protrude convexly into the holes of the mask.
この基板を用いれば、そのマスクと反対側の面
に、透明導電管、光導電膜及び対向電極を順次形
成すれば、光検知素子を形成することができる。
そして、前記接着層がマスクの穴からもり上がる
ように形成してあるので、これがレンズの働きを
し、従来例のように光が穴から散乱し基板上の所
定以外の電極へ到達するのを抑制することができ
る。 Using this substrate, a photodetecting element can be formed by sequentially forming a transparent conductive tube, a photoconductive film, and a counter electrode on the surface opposite to the mask.
Since the adhesive layer is formed to rise up from the hole in the mask, it acts as a lens and prevents light from scattering from the hole and reaching other electrodes on the substrate as in the conventional example. Can be suppressed.
実施例の説明
第３図は、本発明による光検知素子の実施例を
示す断面図である。図において、２１はガラスの
ような光透過性の絶縁基板、２２は基板の片面に
高密度に配置されたITOのような光透過性電極で
ある。その上に光導電膜または光起電力素子とな
るよう構成された薄膜２３を堆積させる。DESCRIPTION OF EMBODIMENTS FIG. 3 is a sectional view showing an embodiment of a photodetecting element according to the present invention. In the figure, 21 is a light-transmitting insulating substrate such as glass, and 22 is a light-transmitting electrode such as ITO arranged at high density on one side of the substrate. A thin film 23 configured to be a photoconductive film or a photovoltaic device is deposited thereon.
前記の膜２３として、この例では、高周波グロ
ー放電法を用いてSiH4を分離重合させた非晶質
水素化シリコン膜を使用した。故意に不純物を混
入させないでSiH4のみを分解させて得たｉ型膜
を用いると光導電膜を構成し、上記ｉ型膜をはさ
むように、ｐ型になる不純物、例えばB2H6を入
れてSiH4を分解させたｐ型膜と、ｎ型になる不
純物、例えばPH3を入れてSiH4を分解させたｎ
型膜とを堆積させると光起電力素子を構成する。
いずれの場合の構成においても本発明は適用可能
である。 In this example, as the film 23, an amorphous silicon hydride film in which SiH 4 was separated and polymerized using a high frequency glow discharge method was used. If an i-type film obtained by decomposing only SiH 4 without intentionally mixing impurities is used, a photoconductive film is formed, and an impurity that becomes p-type, such as B 2 H 6 , is added between the i-type film. A p-type film in which SiH 4 is decomposed by adding an impurity that becomes n-type, such as PH 3 , and an n-type film in which SiH 4 is decomposed by adding an impurity that becomes n-type.
When deposited with a mold film, a photovoltaic device is constructed.
The present invention is applicable to any configuration.
２４は前記の膜２３上に蒸着した裏面電極であ
る。この実施例では、真空蒸着させたAl薄膜を
用いた。この裏面電極２４は、機能に応じて分割
して用いる。すなわちビデオテープレコーダの基
準周波数発生装置であれば、いくつかの周波数を
１つの素子で発生させることができる。 24 is a back electrode deposited on the film 23 described above. In this example, a vacuum-deposited Al thin film was used. This back electrode 24 is divided and used depending on the function. That is, in the case of a reference frequency generating device for a video tape recorder, several frequencies can be generated with one element.
絶縁基板２１の他の表面には、透明導電膜２２
と対応した穴のあいているマスク２５を接着剤２
６で接着してある。接着剤２６は、多い目に用い
られており、マスク２５を接着する際、前述のよ
うにマスク２５の穴から凸状にもり上がるように
構成される。接着剤２６は光透過性であるため、
凸状にもり上がつた接着剤層は、凸レンズの働き
をする。 A transparent conductive film 22 is formed on the other surface of the insulating substrate 21.
Glue 2 the mask 25 with the corresponding hole.
It is glued in step 6. The adhesive 26 is commonly used, and is configured so that when the mask 25 is bonded, it rises up from the hole of the mask 25 in a convex shape as described above. Since the adhesive 26 is optically transparent,
The adhesive layer that rises in a convex shape acts as a convex lens.
この上に光を断続して素子に照射する可動マス
ク２７を配し、従来例と同じ機能をする素子が完
成する。 A movable mask 27 that irradiates the device with light intermittently is placed on top of this, and a device that functions in the same way as the conventional example is completed.
この光検知素子は、接着剤層２６が凸レンズの
働きをするため、直進する光２８−ａは所定の透
明電極に到達するが、斜めから入射する光２８−
ｂでも所定の透明電極に到達させることができ
る。接着剤２６の適量は、板２１の厚さ、マスク
２５とマスク２６のすき間の大きさ、接着剤の屈
析率等によつて変化する。なお２８−ｃのように
極端に斜めから入射する光に対しては、マスク２
５とマスク２６の間で反射していくうち減衰する
が、上記反射面に反射を防ぐような樹脂等を塗布
するとS/N比をさらに向上させることができる。 In this photodetecting element, since the adhesive layer 26 functions as a convex lens, the light 28-a that travels straight reaches a predetermined transparent electrode, but the light 28-a that enters obliquely
b can also reach a predetermined transparent electrode. The appropriate amount of adhesive 26 varies depending on the thickness of plate 21, the size of the gap between mask 25 and mask 26, the refractive index of the adhesive, etc. In addition, for light incident from an extremely oblique angle as shown in 28-c, please use mask 2.
Although the light is attenuated as it is reflected between the mask 5 and the mask 26, the S/N ratio can be further improved by coating the reflecting surface with a resin or the like that prevents reflection.
発明の効果
本発明によれば、S/N比の大きくとれる光検知
素子の高密度アレイを得ることができる。Effects of the Invention According to the present invention, a high-density array of photodetecting elements with a high S/N ratio can be obtained.
第１図及び第２図は従来の光検知素子のアレイ
を示す断面図、第３図は本発明による基板を用い
た高密度に配置された光検知素子のアレイの実施
例を示す断面図である。
２１……基板、２２……裏面電極、２３……光
導電膜、２４……裏面電極、２５……マスク、２
６……接着剤層。
1 and 2 are cross-sectional views showing a conventional array of photodetecting elements, and FIG. 3 is a cross-sectional view showing an example of an array of photodetecting elements arranged in high density using a substrate according to the present invention. be. 21... Substrate, 22... Back electrode, 23... Photoconductive film, 24... Back electrode, 25... Mask, 2
6...Adhesive layer.
Claims (1)
板上に、前記光を透過する接着剤を塗布し、その
上に前記光を透過させない材料からなり穴を有す
るマスクを所定の圧力を加えて押しつけ、マスク
の穴に接着剤が凸部になるように接着することを
特徴とする光学機器用基板の製造方法。1. On an insulating substrate that transmits light having a wavelength within a predetermined range, an adhesive that transmits the light is applied, and a mask that is made of a material that does not transmit the light and that has holes is applied on top of it by applying a predetermined pressure. 1. A method for manufacturing a substrate for optical equipment, which comprises pressing and bonding the mask so that the adhesive forms convex portions in the holes of the mask.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57194093A JPS5984476A (en) | 1982-11-04 | 1982-11-04 | Substrate for optical appliance and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57194093A JPS5984476A (en) | 1982-11-04 | 1982-11-04 | Substrate for optical appliance and manufacture thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5984476A JPS5984476A (en) | 1984-05-16 |
| JPH0231867B2 true JPH0231867B2 (en) | 1990-07-17 |
Family
ID=16318827
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57194093A Granted JPS5984476A (en) | 1982-11-04 | 1982-11-04 | Substrate for optical appliance and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5984476A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2628562A1 (en) * | 1988-03-11 | 1989-09-15 | Thomson Csf | IMAGING DEVICE WITH MATRIX STRUCTURE |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5374395A (en) * | 1976-12-15 | 1978-07-01 | Matsushita Electric Ind Co Ltd | Solid state pickup device |
| JPS55124366A (en) * | 1979-03-19 | 1980-09-25 | Fuji Photo Film Co Ltd | Pickup device |
-
1982
- 1982-11-04 JP JP57194093A patent/JPS5984476A/en active Granted
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5374395A (en) * | 1976-12-15 | 1978-07-01 | Matsushita Electric Ind Co Ltd | Solid state pickup device |
| JPS55124366A (en) * | 1979-03-19 | 1980-09-25 | Fuji Photo Film Co Ltd | Pickup device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5984476A (en) | 1984-05-16 |
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