JPH0461546A - Image sensor - Google Patents

Image sensor

Info

Publication number
JPH0461546A
JPH0461546A JP2172468A JP17246890A JPH0461546A JP H0461546 A JPH0461546 A JP H0461546A JP 2172468 A JP2172468 A JP 2172468A JP 17246890 A JP17246890 A JP 17246890A JP H0461546 A JPH0461546 A JP H0461546A
Authority
JP
Japan
Prior art keywords
light
face
photoelectric conversion
conversion element
original
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2172468A
Other languages
Japanese (ja)
Inventor
Yoichiro Miyaguchi
耀一郎 宮口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ricoh Co Ltd
Original Assignee
Ricoh Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ricoh Co Ltd filed Critical Ricoh Co Ltd
Priority to JP2172468A priority Critical patent/JPH0461546A/en
Publication of JPH0461546A publication Critical patent/JPH0461546A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To make a transparent board small without deteriorating S/N by making one of an end face of the transparent board opposite to a light source and making an end face of the opposite side opposite to an original. CONSTITUTION:A light shield film 2 is provided onto a transparent board 1, a photoelectric conversion element 3 is provided on the film 2, one of an end face of the transparent board 1 is made opposite to a light source and an end face of the opposite side is made opposite to an original 10. The light shield film 2 is formed up to the end face of the side opposite to the original and an illumination light to the photoelectric conversion element and a signal light (reflected light) are completely separated, no stray light exists and high resolution is attained. However, since the stray light is entirely interrupted, the luminous quantity is less. Thus, high sensitive element is used for the photoelectric conversion element 3. The width of the transparent board is made small without deteriorating the S/N.

Description

【発明の詳細な説明】 〔技術分野〕 本発明は、イメージセンサ、とくに等倍型のイメージセ
ンサに関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to an image sensor, and particularly to a same-size image sensor.

〔従来技術〕[Prior art]

従来例では、第1図に示すように、透明基板1の背面か
ら光源入射を受け、遮光膜2に設けられた採光窓4を通
過した光は原稿lOで反射し、信号光として光電変換素
子3に入る形式の完全密着型等倍センサが代表的なもの
である。
In the conventional example, as shown in FIG. 1, the light is incident from a light source from the back side of a transparent substrate 1, passes through a lighting window 4 provided in a light-shielding film 2, is reflected by an original lO, and is transmitted as signal light to a photoelectric conversion element. A typical example is a full-contact type 1-magnification sensor of type 3.

この従来方法であると、センサ透明基板の幅が5R11
以上、厚さ2III11以下の場合は、遮光膜の効果が
認められるので、充分な画像に対する信号量が得られて
来た。
In this conventional method, the width of the sensor transparent substrate is 5R11
As described above, when the thickness is 2III11 or less, the effect of the light shielding film is recognized, and a sufficient signal amount for the image has been obtained.

しかし、装置の小型化等の要請のため透明基板の幅が、
2on、 Inn、 0.6onとますます狭くなる傾
向になって来ている。
However, due to the demand for smaller devices, the width of the transparent substrate has become smaller.
The trend is for the width to become narrower, such as 2on, Inn, and 0.6on.

この場合は透明基板の端面からの散乱光(迷光)が増加
して暗信号が大きくなるため、明信号(S)と暗信号(
N)の差が小さくなる。
In this case, the scattered light (stray light) from the end face of the transparent substrate increases and the dark signal becomes larger, so the bright signal (S) and the dark signal (
N) becomes smaller.

基板幅が3on、厚さ2mで、S/N30dBは認めら
れる構成の光センサが、基板幅がll1111、厚さ2
Iでは18〜20dBの確保が困難となる。
An optical sensor with a substrate width of 3 on and a thickness of 2 m and an S/N of 30 dB has a substrate width of 1111 mm and a thickness of 2 m.
I makes it difficult to secure 18 to 20 dB.

さらに基板面積が狭幅化のため小さくなり、光センサと
採光窓の占有部に制限が発生して。
Furthermore, the board area has become smaller due to the narrower width, which limits the space occupied by the optical sensor and the lighting window.

物理的な構成上、困難になってきている。This is becoming difficult due to the physical structure.

また、完全密着型はプラテンローラ11で原稿10を送
ることがら光電変換素子3の上に耐摩耗板9もしくは膜
を形成する必要がある。
Furthermore, since the complete contact type uses the platen roller 11 to feed the document 10, it is necessary to form a wear-resistant plate 9 or a film on the photoelectric conversion element 3.

これは接着剤8の利用を含み工程が長くなり。This involves the use of adhesive 8 and the process becomes longer.

且つ、耐摩耗板9と光電変換素子3.または即動用回路
パターンの上にミクロンオーダーのダストがあると、ロ
ーラ圧で、保護膜の破壊や、摩耗板のワレパターンの欠
陥が発生する。
In addition, the wear-resistant plate 9 and the photoelectric conversion element 3. Alternatively, if there is micron-order dust on the quick-acting circuit pattern, the roller pressure may destroy the protective film or cause defects in the cracked pattern of the wear plate.

工程の増加によるコスト高1歩留りの低下、信頼性の低
下等が発生している。
The increase in the number of steps has resulted in higher costs, lower yields, and lower reliability.

〔目  的〕〔the purpose〕

本発明の目的は、S/N比を低下することなく、透明基
板の狭小化を達成する点にある。また、本発明の他の目
的は、従来のような耐摩耗板を不要とする構造のイメー
ジセンサを提供する点にある。
An object of the present invention is to achieve narrowing of the transparent substrate without reducing the S/N ratio. Another object of the present invention is to provide an image sensor having a structure that does not require a conventional wear-resistant plate.

〔構  成〕〔composition〕

本発明は、透明基板上に遮光膜を、その上に光電変換素
子を設け、透明基板端面の一方が光源と対峙し、反対側
の端面が原稿と対峙するタイプのイメージセンサであっ
て、原稿対峙側端面から少くとも500μm以内の、好
ましくは100μm以内の個所まで該遮光膜が存在して
いることを特徴とするイメージセンサに関する。
The present invention provides an image sensor of a type in which a light-shielding film is provided on a transparent substrate, a photoelectric conversion element is provided thereon, one end surface of the transparent substrate faces a light source, and the other end surface faces an original document. The present invention relates to an image sensor characterized in that the light-shielding film is present at least within 500 μm, preferably within 100 μm from the opposite end face.

また、本発明においては、原稿対峙側端部に傾斜を設け
、その傾斜面上に光電変換素子を設けることができる。
Further, in the present invention, it is possible to provide an inclination at the end portion on the side facing the document, and to provide the photoelectric conversion element on the inclined surface.

本発明の種々の具体的タイプを第2〜7図を参照して説
明する。
Various specific types of the invention will be described with reference to FIGS. 2-7.

第2図のものは、遮光膜2が原稿対峙側端面まで形成さ
れており、これにより光電変換素子3への照明光と信号
光(反射光)を完全に分離しているので、迷光がなく高
解像度を達成することができる。たきし、迷光を全く遮
断しているため光量が少い。そのため光電変換素子3と
しては、高感度のものを使用することになる。
In the case shown in Fig. 2, the light-shielding film 2 is formed up to the end face on the side facing the original, and this completely separates the illumination light to the photoelectric conversion element 3 from the signal light (reflected light), so there is no stray light. High resolution can be achieved. The amount of light is low because it completely blocks out stray light. Therefore, as the photoelectric conversion element 3, one with high sensitivity is used.

このようなタイプのイメージセンサはスキャナファクシ
ミリ等の高性能用途に有用である。
These types of image sensors are useful in high performance applications such as scanner facsimiles.

第3図のものも遮光膜2が原稿対峙側端面まで形成され
ているケースであるが、原稿対峙側端部に傾斜を設け、
その傾斜面に光電変換素子を設けたものである。
The one in FIG. 3 is also a case in which the light-shielding film 2 is formed up to the end face on the side facing the original, but the end face on the side facing the original is sloped.
A photoelectric conversion element is provided on the inclined surface.

第4図のものは、遮光膜2が原稿対峙側端面からのXの
幅を20〜100μmとしたタイプのものである。
The one shown in FIG. 4 is of a type in which the light-shielding film 2 has a width of 20 to 100 μm in the direction of X from the end surface facing the original.

このように遮光膜2が前記端面まて達していないことに
より、−都連光を取り入れることになり、そのため解像
度は落ちるが、反面光量は多くなるので、比較的低感度
の光電変換素子ですますことができ、経済的である。こ
のようなイメージセンサは電子黒板等のセンサとして有
用である。
Since the light-shielding film 2 does not reach the end face in this way, it takes in continuous light, which lowers the resolution but increases the amount of light, making it possible to use a relatively low-sensitivity photoelectric conversion element. It is possible and economical. Such an image sensor is useful as a sensor for electronic whiteboards and the like.

第5図のものは、第4図のタイプのものの前記端面を傾
斜面とし、その傾斜面上に光電変換素子を設けたもので
あり、前述のXはやはり20〜100μmであることが
好ましい。
The device shown in FIG. 5 is of the type shown in FIG. 4, with the end face being an inclined surface, and a photoelectric conversion element is provided on the inclined surface, and the above-mentioned X is preferably 20 to 100 μm.

第6図のものは、第4図のものの最上層に光導波路16
を形成したものである。17はITOなどからなる透明
電極であり、光センサにはすべてこのように用いられて
いるが、他の図ではすへて省略しである。
The one in Figure 6 has an optical waveguide 16 on the top layer of the one in Figure 4.
was formed. Reference numeral 17 denotes a transparent electrode made of ITO or the like, which is used in all optical sensors, but is omitted in other figures.

第7図のものは、第5図のものの最上層に光導波路I6
を形成したものである。
The one in Figure 7 has an optical waveguide I6 on the top layer of the one in Figure 5.
was formed.

なお、保護膜15をもって光導波路を兼ねることができ
る。
Note that the protective film 15 can also serve as an optical waveguide.

以上、第2〜7図により説明したように5本発明は、透
明基#Fi端面の一方が光源と対峙し。
As described above with reference to FIGS. 2 to 7, in the present invention, one of the end faces of the transparent base #Fi faces the light source.

反対側の端面が原稿と対峙する新しいタイプのイメージ
センサであり、かつ、その遮光膜の構造に工夫をこらし
たものである。
This is a new type of image sensor in which the opposite end faces the original, and the structure of its light-shielding film has been devised.

透明基板は、前述のとおり光源からの入射光が原稿を照
射するための導光路として利用される。
As described above, the transparent substrate is used as a light guide path for irradiating the document with incident light from the light source.

前記透明基板は1石英、ガラス、合成樹脂等の透明材料
を使用する。
The transparent substrate is made of a transparent material such as quartz, glass, or synthetic resin.

光導波路は、透明材料で形成する。The optical waveguide is made of transparent material.

光導波路を使う場合はX〉10μmであっても信号光を
充分とり入れることができるので、S/N比30〜40
dBのレベルを保つことができる。
When using an optical waveguide, signal light can be sufficiently taken in even if X>10 μm, so the S/N ratio is 30 to 40.
dB level can be maintained.

とくに光導波路の上部を遮光膜(たとえば黒のペイント
で被覆)で覆えば一層有効である。
In particular, it is more effective to cover the upper part of the optical waveguide with a light-shielding film (for example, coated with black paint).

透明基板と光導波路の屈折率の関係は。What is the relationship between the refractive index of the transparent substrate and the optical waveguide?

先導波路〉透明基板 であることが好ましいが具体例を示すと、透明基板とし
て、石英を用いるとそれはn=1.43〜1.45、光
導波路として5iONを使用するとn=1.55〜1.
62.5in2を使用するとn = 1.46〜1.5
0となる。なお、光電変換素子の受光面に設けられる透
明電極は、ITOを使用すればn=1.65〜1.70
である。内側になるにつれて一層屈折率が高い層となっ
た積層構造が好ましい。
Guide waveguide> A transparent substrate is preferable, but to give a specific example, if quartz is used as the transparent substrate, n = 1.43 to 1.45, and if 5iON is used as the optical waveguide, n = 1.55 to 1. ..
When using 62.5in2, n = 1.46 to 1.5
It becomes 0. Note that if ITO is used as the transparent electrode provided on the light-receiving surface of the photoelectric conversion element, n=1.65 to 1.70.
It is. A laminated structure in which the layers have a higher refractive index toward the inside is preferable.

傾斜角度については約45°〜60°が好ましい。The angle of inclination is preferably about 45° to 60°.

端面の傾向開始個所は特別の制限はないが、原稿やロー
ラに接触するところであるから、端面がシャープなエツ
ジを形成するような傾斜面をつくることは避けることが
好ましい。傾斜面は平坦面の場合と曲面の場合が存在す
る。曲面は凹面である。平坦面より曲面の方がレンズ効
果によりセンサへの入射光が増加する。平坦面では傾斜
角と屈折率による光のシフト量のみに依存する。前記曲
面の曲率はローラの曲率と原稿面とセンサの間(空気層
も含む。)等も考慮する必要があるが、その曲面の焦点
部近傍に原稿面がくるようにするのが好ましい。
Although there is no particular restriction on the point at which the tendency of the end surface starts, it is preferable to avoid creating a sloped surface that would form a sharp edge because this is the point where the end surface comes into contact with the original or the roller. There are two types of inclined surfaces: flat surfaces and curved surfaces. The curved surface is concave. The amount of light incident on the sensor increases due to the lens effect on a curved surface than on a flat surface. For a flat surface, it depends only on the amount of shift of light due to the angle of inclination and the refractive index. Regarding the curvature of the curved surface, it is necessary to consider the curvature of the roller and the space between the document surface and the sensor (including an air layer), but it is preferable that the document surface be located near the focal point of the curved surface.

なお、第2図〜7図において、パッシベーション膜7と
保護膜15を透明材料で構成すれば、これらはいずれも
集光膜としても機能する。
In addition, in FIGS. 2 to 7, if the passivation film 7 and the protective film 15 are made of transparent materials, they both function as light-condensing films.

〔効  果〕〔effect〕

(1)本発明のイメージセンサは、透明基板端面の一方
が光源と対峙し反対側の端面が原稿と対峙する構造とし
たので、第1図に示す従来型のイメージセンサが耐摩耗
板を不可欠としていたのに対して、このような耐摩耗板
が不要となった。また、耐摩耗板が不要になったことに
伴い、その分、製造コストが低下した。
(1) The image sensor of the present invention has a structure in which one end face of the transparent substrate faces the light source and the other end face faces the original, so the conventional image sensor shown in Fig. 1 requires a wear-resistant plate. However, such a wear-resistant plate is no longer necessary. Furthermore, since the wear-resistant plate is no longer necessary, manufacturing costs have been reduced accordingly.

また、摩耗が小さいことから、それに伴うダストの発生
も減少した。
Additionally, since there is less wear, the generation of dust associated with it has also been reduced.

(2)本発明は、透明基板端面からの反射光量を最適化
するため、Xの幅をO〜500μ翔の間で調整し、解像
度をある程度のレベルに保ちつつ、S/N比を30〜4
0dBとすることができた。
(2) In order to optimize the amount of reflected light from the end surface of the transparent substrate, the width of 4
It was possible to make it 0 dB.

(3)従来タイプのものでは透明基板の幅を小さくする
と採光窓が小さくなりS/N比の低下を招いたが、本発
明は透明基板の厚みにより採光量を確保できるので、透
明基板幅の狭小化が可能となった。
(3) In the conventional type, when the width of the transparent substrate is reduced, the lighting window becomes smaller and the S/N ratio decreases, but in the present invention, the amount of lighting can be secured by the thickness of the transparent substrate, so the width of the transparent substrate can be reduced. Narrowing became possible.

(4)傾斜面を設けることにより、画素との焦点深度が
自由にとれるので、画素の分解能を大きくしたり、小さ
くしたりすることができる。また、傾斜面全体から画素
が照明されるので、信号光を大きくとれ、 S/N比が
向上できる。
(4) By providing the inclined surface, the depth of focus with respect to the pixels can be adjusted freely, so the resolution of the pixels can be increased or decreased. Furthermore, since the pixels are illuminated from the entire inclined surface, a large amount of signal light can be obtained and the S/N ratio can be improved.

(5)傾斜面に光電変換素子を設けることにより、セン
サ面積が画素に大きくとれ、原稿からの反射光を一層有
効に受は入れることができた。また、センサ等にローラ
その他が接触しないので破損が少ない。
(5) By providing the photoelectric conversion element on the inclined surface, the sensor area can be increased to a pixel, and the reflected light from the original can be received more effectively. Furthermore, since the rollers and other parts do not come into contact with the sensor, there is little chance of damage.

(6)保護膜上に、無機あるいは有機材料で光導波路を
設けることにより、原稿からの反射光を一層有効に受は
入れることができた。
(6) By providing an optical waveguide made of inorganic or organic material on the protective film, reflected light from the original could be received more effectively.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は、従来型のイメージセンサ断面図、第2〜7図
は、本発明のイメージセンサの具体例を示す断面図であ
る。 l 透明基板   2・・・電極兼遮光膜3・・・光電
変換素子 4・・採光窓 5 ・保護膜    6・・上部電極 7・パッシベーション膜 8・接着剤    9・・・透明耐摩耗板10・原 稿
    1ドプラチンローラ12・・支持体    1
3・・スリットJ5・保護膜    16・光導波路 17・ITO電極 第 図 先 第2図 第 3図
FIG. 1 is a sectional view of a conventional image sensor, and FIGS. 2 to 7 are sectional views showing specific examples of the image sensor of the present invention. l Transparent substrate 2... Electrode and light shielding film 3... Photoelectric conversion element 4... Lighting window 5 - Protective film 6... Upper electrode 7 - Passivation film 8 - Adhesive 9... Transparent wear-resistant plate 10. Document 1 Doplatin roller 12...Support 1
3...Slit J5・Protective film 16・Optical waveguide 17・ITO electrode Figure 2 Figure 3

Claims (1)

【特許請求の範囲】 1、透明基板上に遮光膜を、その上に光電変換素子を設
け、透明基板端面の一方が光源と対峙し、反対側の端面
が原稿と対峙するタイプのイメージセンサであって、原
稿対峙側端面から少くとも500mμ以内の個所まで該
遮光膜が存在していることを特徴とするイメージセンサ
。 2、原稿対峙側端部に傾斜を設け、その傾斜面上に光電
変換素子が設けられていることを特徴とする請求項1記
載のイメージセンサ。
[Claims] 1. An image sensor of a type in which a light-shielding film is provided on a transparent substrate and a photoelectric conversion element is provided thereon, one end face of the transparent substrate faces a light source, and the other end face faces a document. An image sensor characterized in that the light-shielding film is present at least within 500 mμ from the end face on the side facing the original. 2. The image sensor according to claim 1, wherein the end portion facing the document is sloped, and the photoelectric conversion element is provided on the sloped surface.
JP2172468A 1990-06-29 1990-06-29 Image sensor Pending JPH0461546A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2172468A JPH0461546A (en) 1990-06-29 1990-06-29 Image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2172468A JPH0461546A (en) 1990-06-29 1990-06-29 Image sensor

Publications (1)

Publication Number Publication Date
JPH0461546A true JPH0461546A (en) 1992-02-27

Family

ID=15942551

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2172468A Pending JPH0461546A (en) 1990-06-29 1990-06-29 Image sensor

Country Status (1)

Country Link
JP (1) JPH0461546A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6724503B1 (en) 1997-08-29 2004-04-20 Rohm Co., Ltd. Image sensor substrate and image sensor employing it

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6724503B1 (en) 1997-08-29 2004-04-20 Rohm Co., Ltd. Image sensor substrate and image sensor employing it

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