JPS5949695B2 - Manufacturing method for glass-sealed semiconductor devices - Google Patents

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a glass-sealed semiconductor device, such as a dual-in-line IC (integrated circuit) device, and particularly to improvements in its package structure.

In conventionally proposed dual-in-line IC devices, an IC chip is fixed in a cavity provided on the surface of a ceramic base member, leads are attached around the cavity, and a ceramic cap member is placed on top of the lead. The overlapped portion is then sealed with glass.

In this case, since the cap member has a cavity that is larger than the cavity of the base member, when the periphery of the cavity of the cap member and the periphery of the cavity of the base member are overlapped, the inner end of the drawer lead is It is exposed within the cavity of the cap member. Therefore, if five predetermined electrodes of an IC chip are connected to the inner ends of the corresponding leads using bonding wires, when the cap member is stacked on the base member and the overlapped portion is sealed with glass, the leads of the bonding wires can be connected to the inner ends of the corresponding leads using bonding wires. The bonding part is removed from the overlapping part (that is, the glass sealing part) and is located inside the cavity, and the wire does not come into contact with the cap member, so there is almost no chance of wire breakage. Who? As described above, the conventional package structure shows fairly satisfactory performance in itself, but it is difficult to accommodate the semiconductor chips (especially ICs) that must be housed inside.
When the size of chips (chips) increases, there is a problem in that the size of the base member and cap member that constitute the package must be correspondingly increased in order to cope with this increase. That is, increasing the package size commensurately with the increase in chip size is not desirable because it leads to changes in package manufacturing equipment and increases in package cost. An object of the present invention is to provide a glass-sealed semiconductor device having a novel package structure that solves the problems of the prior art described above.

One of the features of the present invention is that the size of the internal cavity is increased in accordance with the chip size while keeping the overall size of the package unchanged.

Specifically, the cavity of the base member in which the semiconductor chip is to be housed is made as large as the cavity of the cap member, and one end of the connecting wire is connected to the semiconductor chip, and the other end of the connecting wire is connected to the inner end of the drawer lead. Bonding should be performed at the location where glass sealing is planned. In this case, when the cap member is stacked on the base member and the space between them is sealed with glass, it is likely that the cap member will come into contact with the connecting wire and cause a disconnection accident.
According to the research conducted by the present inventors, it has been found that such accidents are not as common as expected, and that most of them can be avoided by making some improvements in the manufacturing process. The invention will now be described with reference to embodiments shown in the accompanying drawings. FIG. 1 shows a cross section of a dual-in-line type 1C device according to an embodiment of the present invention.

In the figure, 10 is a ceramic base member having a cavity 10a, 20 is a ceramic cap member having a cavity 20a, and sealing glass protrusions 22 are attached here and there to the lower surface of the periphery of the cavity of the cap member 20. . A large number of leads 16 are linearly arranged in a direction perpendicular to the paper on the upper surface of the base member 10 around the cavity, and an IC chip 14 is fixed in the cavity 10a by an adhesive layer 12. Cavity 10a is formed to be approximately the same size as cavity 20a, and the inner ends of leads 16 do not extend directly into these cavities. For this purpose, a connecting wire 18 made of, for example, Al and having one end bonded to the chip 14 is used.
The other end is connected to the lead 16 at the illustrated position between the cavity periphery of the cap member 20 and the cavity periphery of the base member 10, that is, between the portions to be glass-sealed.
bonded to the inner end of the When performing glass sealing, the cap member 20 is first placed on the base member 10.

In this case, since the sealing glass protrusions 22 are provided in places where they do not come into contact with the wire 18, disconnection accidents hardly occur. Thereafter, the glass protrusions 22 are melted and spread over the entire area to be sealed by a suitable heat treatment, and then solidified to achieve the desired airtight glass sealing. As a result, the wire 18 is embedded in the glass sealing layer in the vicinity of the lead 16. As described above, according to the present invention, it is possible to reduce the package cost by simply changing the size of the cavity 10a. By making a few changes to the arrangement, many practical benefits can be obtained, such as reducing bonding wire breakage.

According to the present invention, the peripheral portion of the base member has a protruding wall, and the other end of the wire 18 is wire bonded to the lead 16 attached to the protruding surface of the wall. Since the other end of the bonding wire is always placed at a higher position than the peripheral part of the semiconductor pellet,
An undesirable accident in which the other end of the bonding wire shorts to the periphery of the semiconductor pellet is prevented.

In addition, in the above-mentioned embodiment, a method of providing the sealing glass in a protruding shape was exemplified as a measure to prevent disconnection, but there are various other methods, and the method is not limited to the above-mentioned embodiment.

For example, it is also conceivable to provide a protrusion on the lead 16 and seal it with sealing glass.

[Brief explanation of drawings]

FIG. 1 is a cross-sectional view of one manufacturing process of an IC device according to an embodiment of the present invention, and FIG. 2 is a plan view of the cap member of the device of FIG. 1 viewed from below. Explanation of symbols, 10...Base member, 12...
...Adhesive layer, 14...IC chip, 16...
...Lead, 18...Connection wire, 20.
... Cap member, 22 ... Glass protrusion for sealing.

Claims (1)

[Claims] 1. Prepare a base member formed to define a cavity by a bottom part and a wall part protruding around the bottom part, fix a semiconductor chip in the cavity of the base member, and fix the semiconductor chip in the cavity of the base member. Metal wires are bonded to leads preformed on the protruding surface and the semiconductor chip to electrically connect them, and are formed at predetermined intervals in correspondence with the protruding surface of the wall. By superimposing a cap member having a plurality of sealing glass protrusions on the base member and heat-treating the same,
melting the sealing glass or protrusion on the protruding surface of the wall;
A method for manufacturing a glass-sealed semiconductor device, comprising sealing the base member and the cap member.