JPH0469958A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH0469958A JPH0469958A JP2184506A JP18450690A JPH0469958A JP H0469958 A JPH0469958 A JP H0469958A JP 2184506 A JP2184506 A JP 2184506A JP 18450690 A JP18450690 A JP 18450690A JP H0469958 A JPH0469958 A JP H0469958A
- Authority
- JP
- Japan
- Prior art keywords
- sensor part
- semiconductor device
- sealed
- projecting wall
- surrounded
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 26
- 229920005989 resin Polymers 0.000 claims abstract description 11
- 239000011347 resin Substances 0.000 claims abstract description 11
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract description 6
- 238000007789 sealing Methods 0.000 abstract 1
- 238000001721 transfer moulding Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- GXCLVBGFBYZDAG-UHFFFAOYSA-N N-[2-(1H-indol-3-yl)ethyl]-N-methylprop-2-en-1-amine Chemical compound CN(CCC1=CNC2=C1C=CC=C2)CC=C GXCLVBGFBYZDAG-UHFFFAOYSA-N 0.000 description 1
- 241000220317 Rosa Species 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229920002050 silicone resin Polymers 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
この発明は、半導体素子表面において光や圧力を感知す
るセンサ部を備えた半導体装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device including a sensor section that senses light and pressure on the surface of a semiconductor element.
第3図はこの種の従来の半導体装置を示す断面図であり
、この図において、1は半導体素子で、センサ部2を備
えている。3は前記半導体素子1を固定するグイパッド
、4は外部回路とのコンタクトをとるアウタリード、5
は前記半導体素子1とアウタリード4を電気的に結合さ
せる金線、6はパッケージのキャップ、7はベース、8
は前記キャップ6とベース7を接着させる接着剤、9は
前記センサ部2に外部からの光や熱を通すための窓であ
る。FIG. 3 is a cross-sectional view showing this type of conventional semiconductor device. In this figure, 1 is a semiconductor element, which is provided with a sensor section 2. As shown in FIG. 3 is a guide pad for fixing the semiconductor element 1; 4 is an outer lead for making contact with an external circuit; 5 is an outer lead for making contact with an external circuit;
8 is a gold wire that electrically connects the semiconductor element 1 and the outer lead 4; 6 is a cap of the package; 7 is a base;
9 is an adhesive for bonding the cap 6 and the base 7 together, and 9 is a window for passing light and heat from the outside to the sensor section 2.
次に、動作について説明する。Next, the operation will be explained.
窓9から取り込まれた光や圧力等の変化はセンサ部2に
おいて検知され、それに伴った電気信号が金線5.アウ
タリード4を通って外部回路へ出力される。Changes in light, pressure, etc. taken in through the window 9 are detected by the sensor section 2, and the accompanying electrical signals are sent to the gold wire 5. The signal is output to the external circuit through the outer lead 4.
このようにセンサ部2を備え、パッケージされた従来の
半導体装置は、センサ部2が検知される対象、例えば光
と直接接触する必要があることと、センサ部2へのスト
レスを低減させるためにキヤ、−)プロ、ベース7から
構成された中空パッケージを用いなければならず、コス
トが高く、また、1パツケージ毎に接着する必要がある
ため、量産性が低いなどの問題点があった。Conventional semiconductor devices equipped with the sensor section 2 and packaged in this way require the sensor section 2 to come into direct contact with the object to be detected, such as light, and in order to reduce stress on the sensor section 2. A hollow package consisting of the base 7 must be used, which is expensive, and since each package must be bonded, there are problems such as low mass productivity.
この発明は、上記のような問題点を解消するためになさ
れたもので、l−ランスファ成形によってセンサ部以外
を樹脂封止した半導体装置を得ることを目的とする。The present invention was made to solve the above-mentioned problems, and an object of the present invention is to obtain a semiconductor device in which parts other than the sensor part are sealed with resin by l-transfer molding.
この発明に係る半導体装置は、表面上に外部雰囲気との
直接接触を必要とずろセッサ部を備えた半導体素子の前
記センサ部を囲むように突起壁を形成し、乙の突起壁で
囲まれた領域以外をモールド樹脂て樹脂封止したもので
ある。In the semiconductor device according to the present invention, a protruding wall is formed so as to surround the sensor section of a semiconductor element that requires direct contact with an external atmosphere and is provided with a sensor section on its surface, and The area other than the area is sealed with mold resin.
この発明においては、外部雰囲気と直接接触するセンサ
部を囲むように突起壁を形成し、この突起壁で囲まれた
領域以外を樹脂封止したことから、量産性および低コス
ト化が図れる。In this invention, a protruding wall is formed to surround the sensor portion that is in direct contact with the external atmosphere, and the area other than the area surrounded by the protruding wall is sealed with resin, thereby achieving mass production and cost reduction.
以下、この発明の一実施例を図面について説明する。 An embodiment of the present invention will be described below with reference to the drawings.
第1図はこの発明の半導体装置の一実施例を示す断面図
である。第1図において、第3図と同一符号は同一のも
のを示し、10は前記センサ部2の周囲に形成された中
空部形成用の突起壁で、シリコン樹脂等で形成される。FIG. 1 is a sectional view showing an embodiment of the semiconductor device of the present invention. In FIG. 1, the same reference numerals as in FIG. 3 indicate the same parts, and 10 is a protruding wall for forming a hollow portion formed around the sensor section 2, and is made of silicone resin or the like.
11はトランスファ成形によるモールド部である。Reference numeral 11 indicates a molded portion formed by transfer molding.
第1図の構成によれば、突起壁10に囲まれたセッサ部
2の表面以外はすへてモールド部11によって封止され
ている。温度、圧力などの変化は、突起壁10に囲まれ
樹脂封止されていない領域を通ってセンサ部2に達し、
このセッサ部2によって検知され、それに伴う電気信号
は金線5.アウタリード4を通して外部回路に伝達され
る。According to the configuration shown in FIG. 1, the entire surface of the processor section 2 other than the surface surrounded by the projecting wall 10 is sealed by the mold section 11. Changes in temperature, pressure, etc. reach the sensor section 2 through an area surrounded by the protrusion wall 10 and not sealed with resin, and
This sensor section 2 detects the electric signal, and the accompanying electric signal is sent to the gold wire 5. The signal is transmitted to the external circuit through the outer lead 4.
次に、製造方法を第2図(a)〜(d)によって説明す
る。Next, the manufacturing method will be explained with reference to FIGS. 2(a) to 2(d).
第2図において、12はトランスファ成形用の上金型、
13は同しく下金型、14は流動中のモルト樹脂である
。In FIG. 2, 12 is an upper mold for transfer molding;
13 is a lower mold, and 14 is a flowing malt resin.
まず、第2図(a)に示すように、グイパッド3上に半
導体素子1をグイボンド後、アウタリド4と半導体素子
1を金線5を用いて結合させろ。First, as shown in FIG. 2(a), after bonding the semiconductor element 1 onto the adhesive pad 3, the auteride 4 and the semiconductor element 1 are bonded using the gold wire 5.
続いて、第2図(b)に示すように、突起壁10を半導
体素子1のセンサ部2を囲むように形成する。次に、第
2図(C)に示すように、トランスファ成形用の上、下
金型12,13にセラ)・シ、第2図(d)に示すよう
に、型締めする。この時、突起壁10の上端は、上金型
のキャビテイ面に接触し、セッサ部2を覆う中空部10
aが形成されろ。次いて、モールド樹脂を型締めされた
上、下金型13.1a内にトランスファさせ、成形を完
了させろ。これにより第1図に示す半導体装置が行われ
る。Subsequently, as shown in FIG. 2(b), a protruding wall 10 is formed to surround the sensor section 2 of the semiconductor element 1. Next, as shown in FIG. 2(C), the upper and lower molds 12 and 13 for transfer molding are sealed, and the molds are clamped as shown in FIG. 2(d). At this time, the upper end of the protruding wall 10 comes into contact with the cavity surface of the upper mold, and the hollow part 10 that covers the processor part 2
A is formed. Next, transfer the mold resin into the clamped upper and lower molds 13.1a to complete the molding. This completes the semiconductor device shown in FIG.
なお、上記実施例では突起壁10の形成をワイヤリング
後に行ったが、素子がウエノ1状態にある際に行っても
よい。In the above embodiment, the protruding wall 10 was formed after wiring, but it may be formed when the element is in the Ueno 1 state.
以上説明したように、乙の発明は、表面上に外部雰囲気
との直接接触を必要とするセンサ部を備えた半導体素子
の前記センサ部を囲むように突起壁を形成し、この突起
壁で囲まれた領域以外をモールド樹脂でIiM脂封止し
たので、専用の中空バラケーンを用いることなく、トラ
ンスファ成形によってモールド封止でき、外部雰囲気と
直接接触するセンサ部を備えた半導体装置を量産性よく
、安価に得ることができる効果がある。As explained above, in the invention of B, a protruding wall is formed to surround the sensor part of a semiconductor element that has a sensor part that requires direct contact with the external atmosphere on the surface, and the protruding wall surrounds the semiconductor element. Since the area other than the area covered with IiM resin is sealed with mold resin, it can be mold-sealed by transfer molding without using a special hollow rose cane, making it possible to mass-produce a semiconductor device equipped with a sensor part that comes into direct contact with the external atmosphere. It has an effect that can be obtained at low cost.
第1図はこの発明の一実施例による半導体装置を示す断
面図、第2図はこの発明の一実施例による半導体装置の
製造方法を示す工程断面図、第3図は従来の半導体装置
を示す断面図である。
図において、1は半導体素子、2はセンサ部、3はグイ
パッド、4はアウタリード、5は金線、1Qは突起壁、
10aは中空部、11はモールド部、12は上金型、1
3は下金型、14は流動中のモールド樹脂である。
なお、各図中の同一符号は同一または相当部分をボす。
代理人 大 岩 増 雄 (外2名)第
図
第
図
第
図
濾1m中のモールドな刊−
手
続
補
正 書(自発)
平成 年
月
日FIG. 1 is a sectional view showing a semiconductor device according to an embodiment of the present invention, FIG. 2 is a process sectional view showing a method for manufacturing a semiconductor device according to an embodiment of the invention, and FIG. 3 is a conventional semiconductor device. FIG. In the figure, 1 is a semiconductor element, 2 is a sensor section, 3 is a guide pad, 4 is an outer lead, 5 is a gold wire, 1Q is a protrusion wall,
10a is a hollow part, 11 is a mold part, 12 is an upper mold, 1
3 is a lower mold, and 14 is a flowing mold resin. Note that the same reference numerals in each figure indicate the same or corresponding parts. Agent Masuo Oiwa (2 others) Mold publication in Figure Figure Figure Figure 1m - Procedural amendment (self-motivated) Date of Heisei
Claims (1)
を備えた半導体素子の前記センサ部を囲むように突起壁
を形成し、この突起壁で囲まれた領域以外をモールド樹
脂で樹脂封止したことを特徴とする半導体装置。A protruding wall is formed to surround the sensor part of a semiconductor element having a sensor part that requires direct contact with an external atmosphere on its surface, and the area other than the area surrounded by the protruding wall is resin-sealed with mold resin. A semiconductor device characterized by:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2184506A JPH0469958A (en) | 1990-07-10 | 1990-07-10 | Semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2184506A JPH0469958A (en) | 1990-07-10 | 1990-07-10 | Semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0469958A true JPH0469958A (en) | 1992-03-05 |
Family
ID=16154387
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2184506A Pending JPH0469958A (en) | 1990-07-10 | 1990-07-10 | Semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0469958A (en) |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0677359A (en) * | 1992-08-28 | 1994-03-18 | Nec Corp | Resin-sealed semiconductor device and manufacture thereof |
JP2008047830A (en) * | 2006-08-21 | 2008-02-28 | Hamamatsu Photonics Kk | Semiconductor device and manufacturing method of semiconductor device |
JP2009239106A (en) * | 2008-03-27 | 2009-10-15 | Sony Corp | Semiconductor device and method of producing the same |
JP2010153726A (en) * | 2008-12-26 | 2010-07-08 | Renesas Technology Corp | Manufacturing method for semiconductor device, and semiconductor device |
KR101066175B1 (en) * | 2007-07-27 | 2011-09-20 | 르네사스 일렉트로닉스 가부시키가이샤 | Electronic device and method for manufacturing electronic device |
US8243461B2 (en) | 2008-12-04 | 2012-08-14 | Renesas Electronics Corporation | Electronic device and process for manufacturing electronic device |
US8270177B2 (en) | 2007-07-27 | 2012-09-18 | Renesas Electronics Corporation | Electronic device and method for manufacturing electronic device |
WO2013140674A1 (en) * | 2012-03-19 | 2013-09-26 | 日立オートモティブシステムズ株式会社 | Flow sensor and method for manufacturing same |
JP2015158521A (en) * | 2015-06-11 | 2015-09-03 | 日立オートモティブシステムズ株式会社 | Flow sensor and method of manufacturing the same |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6132535A (en) * | 1984-07-25 | 1986-02-15 | Sanyo Electric Co Ltd | Manufacture of sensor |
JPS62232944A (en) * | 1986-04-03 | 1987-10-13 | Ibiden Co Ltd | Circuit substrate for mounting semiconductor element with sealing frame |
JPS6411354A (en) * | 1987-07-03 | 1989-01-13 | Fuji Xerox Co Ltd | Sealing structure of electronic circuit |
-
1990
- 1990-07-10 JP JP2184506A patent/JPH0469958A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6132535A (en) * | 1984-07-25 | 1986-02-15 | Sanyo Electric Co Ltd | Manufacture of sensor |
JPS62232944A (en) * | 1986-04-03 | 1987-10-13 | Ibiden Co Ltd | Circuit substrate for mounting semiconductor element with sealing frame |
JPS6411354A (en) * | 1987-07-03 | 1989-01-13 | Fuji Xerox Co Ltd | Sealing structure of electronic circuit |
Cited By (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0677359A (en) * | 1992-08-28 | 1994-03-18 | Nec Corp | Resin-sealed semiconductor device and manufacture thereof |
JP2008047830A (en) * | 2006-08-21 | 2008-02-28 | Hamamatsu Photonics Kk | Semiconductor device and manufacturing method of semiconductor device |
KR101066175B1 (en) * | 2007-07-27 | 2011-09-20 | 르네사스 일렉트로닉스 가부시키가이샤 | Electronic device and method for manufacturing electronic device |
US8270177B2 (en) | 2007-07-27 | 2012-09-18 | Renesas Electronics Corporation | Electronic device and method for manufacturing electronic device |
US9327457B2 (en) | 2007-07-27 | 2016-05-03 | Renesas Electronics Corporation | Electronic device and method for manufacturing electronic device |
CN103594526A (en) * | 2008-03-27 | 2014-02-19 | 索尼株式会社 | Semiconductor device |
JP2009239106A (en) * | 2008-03-27 | 2009-10-15 | Sony Corp | Semiconductor device and method of producing the same |
US8525285B2 (en) | 2008-03-27 | 2013-09-03 | Sony Corporation | Semiconductor device with groove structure to prevent molding resin overflow over a light receiving region of a photodiode during manufacture |
US8243461B2 (en) | 2008-12-04 | 2012-08-14 | Renesas Electronics Corporation | Electronic device and process for manufacturing electronic device |
US8986588B2 (en) | 2008-12-04 | 2015-03-24 | Renesas Electronics Corporation | Electronic device and process for manufacturing electronic device |
JP2010153726A (en) * | 2008-12-26 | 2010-07-08 | Renesas Technology Corp | Manufacturing method for semiconductor device, and semiconductor device |
CN104024807A (en) * | 2012-03-19 | 2014-09-03 | 日立汽车系统株式会社 | Flow sensor and method for manufacturing same |
JP2013195231A (en) * | 2012-03-19 | 2013-09-30 | Hitachi Automotive Systems Ltd | Flow sensor and method for manufacturing the same |
WO2013140674A1 (en) * | 2012-03-19 | 2013-09-26 | 日立オートモティブシステムズ株式会社 | Flow sensor and method for manufacturing same |
JP2015158521A (en) * | 2015-06-11 | 2015-09-03 | 日立オートモティブシステムズ株式会社 | Flow sensor and method of manufacturing the same |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5534725A (en) | Resin molded charge coupled device package and method for preparation thereof | |
JPH02129948A (en) | Pre-molded type semiconductor device | |
JPH0469958A (en) | Semiconductor device | |
JPS63240053A (en) | Semiconductor device | |
JPS6320120Y2 (en) | ||
KR920007155A (en) | Semiconductor device and manufacturing method thereof | |
JPS62174956A (en) | Plastic mold type semiconductor device | |
JP2634249B2 (en) | Semiconductor integrated circuit module | |
JPH06148014A (en) | Semiconductor pressure sensor | |
JP3149678B2 (en) | Semiconductor pressure sensor | |
JPH07249729A (en) | Electronic device | |
JPH01215049A (en) | Semiconductor device | |
JPS5889844A (en) | Resin sealed type semiconductor device | |
JPH085473A (en) | Hollow type resin sealed semiconductor pressure sensor | |
JPS6269674A (en) | Solid-state image pickup device and manufacture of the same | |
JPH0521647A (en) | Resin sealed type semiconductor device and manufacture thereof | |
JPH0469534A (en) | Semiconductor pressure sensor | |
JPH04313036A (en) | Hollow-type resin sealed semiconductor pressure sensor | |
JPH0210238A (en) | Structure of semiconductor sensor unit | |
JPH088384A (en) | Semiconductor device and manufacture thereof | |
JPS6242440A (en) | Double resin-sealed package and manufacture thereof | |
JPH0266961A (en) | Semiconductor device and manufacture thereof | |
JPS6336139B2 (en) | ||
JPH0391258A (en) | Lead frame | |
JPH0210758A (en) | Semiconductor device |