CN104024807A - Flow sensor and method for manufacturing same - Google Patents
Flow sensor and method for manufacturing same Download PDFInfo
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- CN104024807A CN104024807A CN201280065517.8A CN201280065517A CN104024807A CN 104024807 A CN104024807 A CN 104024807A CN 201280065517 A CN201280065517 A CN 201280065517A CN 104024807 A CN104024807 A CN 104024807A
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Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
- G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
- G01F1/684—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow
- G01F1/6845—Micromachined devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
- G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
- G01F1/684—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow
- G01F1/688—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow using a particular type of heating, cooling or sensing element
- G01F1/69—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow using a particular type of heating, cooling or sensing element of resistive type
- G01F1/692—Thin-film arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Physics & Mathematics (AREA)
- Fluid Mechanics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Volume Flow (AREA)
Abstract
Provided is a technology capable of improving performance by minimizing performance inconsistency of each flow sensor (this also includes enhancing reliability to improve performance). For example, when a lead frame (LF) on which a semiconductor chip (CHP1) is mounted is sandwiched between an upper mold (UM) and a bottom mold (BM), a frame body (FB) and an elastic film (LAF) are interposed between the lead frame (LF) on which the semiconductor chip (CHP1) is mounted and the upper mold (UM). At this point, the height of the frame body (FB) is higher than the height of a flow detector (FDU) and the elastic modulus of the frame body (FB) is smaller than the elastic modulus of the semiconductor chip (CHP1).
Description
Technical field
The present invention relates to flow sensor and manufacturing technology thereof, relate in particular to the effective technology of the structure that is applicable to flow sensor.
Background technology
In TOHKEMY 2004-74713 communique (patent documentation 1), disclose the mould holding parts by being provided with divergence type thin web as the manufacture method of semiconductor housing, flow into the method for resin.
In addition, in TOHKEMY 2011-122984 communique (patent documentation 2), about the flow sensor that the mobile flow testing division part of gas (air) is exposed, record mould and use the manufacture method by the flow sensor of putting into part or elastomer thin film of spring-loaded.
Prior art document
Patent documentation
Patent documentation 1: TOHKEMY 2004-74713 communique
Patent documentation 2: TOHKEMY 2011-122984 communique
Summary of the invention
The technical matters solving is wanted in invention
For example, current in the internal combustion engine of automobile etc., be provided with electronic control fuel injection device.This electronic control fuel injection device has by suitably adjusting flowing into the gas (air) of internal combustion engine and the amount of fuel, the effect that internal combustion engine is turned round effectively.Therefore,, in electronic control fuel injection device, need the correct gas (air) that flows into internal combustion engine of grasping.Therefore, electronic control fuel injection device is provided with the flow sensor (air flow sensor) of mensurated gas composition (air) flow.
In flow sensor, the flow sensor that especially utilizes semiconductor microactuator process technology to manufacture, because can cutting down cost and can be with low driven by power, so be concerned.This flow sensor, for example adopt following structure: form the barrier film (diaphragm) (thin plate part) that utilizes anisotropic etching and form at the back side of the Semiconductor substrate being formed by silicon, be formed with the flow testing division being formed by heating resistor and temperature detecting resistance body on the surface of the Semiconductor substrate relative with this barrier film.
In actual flow sensor, for example, except being formed with the first semi-conductor chip of barrier film and flow testing division, also there is the second semi-conductor chip that is formed with the control circuit portion that controls flow testing division.Above-mentioned the first semi-conductor chip and the second semi-conductor chip are for example mounted on substrate, are electrically connected with the distribution (terminal) being formed on substrate.Particularly, for example, the first semi-conductor chip is connected with the distribution that is formed on substrate by the metal wire being formed by gold thread (spun gold), the second semi-conductor chip uses the concavo-convex electrode (bump electrode) that is formed on the second semi-conductor chip, is connected with the distribution that is formed on substrate.Like this, the first semi-conductor chip being mounted on substrate is connected via the wired electric that is formed on substrate with the second semi-conductor chip.As a result, can control the flow testing division that is formed on the first semi-conductor chip by the control circuit portion that is formed on the second semi-conductor chip, form flow sensor.
Now, the gold thread (spun gold, metal wire) that connects the first semi-conductor chip and substrate is in order to prevent because of contacting of causing of distortion etc., conventionally fixing by potting resin (potting resin, joint filling resin, sealing resin).That is, gold thread (metal wire) is covered by potting resin and fixes, and utilizes this potting resin, protects gold thread (metal wire).On the other hand, the first semi-conductor chip and second semi-conductor chip of formation flow sensor are not filled with resin-encapsulated conventionally.In other words,, in common flow sensor, adopt only gold thread (metal wire) to be filled with the structure that resin covers.
At this, gold thread (metal wire) utilize fixing that potting resin carries out, be not will under state fixing the first semi-conductor chip, to carry out at use mould etc., so there is sometimes the problem departing from from loading position because of the first semi-conductor chip that the contraction of potting resin causes.And, because potting resin forms by dripping, so, there is the low problem of dimensional accuracy of potting resin.Its result, in each flow sensor, the loading position that is formed on the first semi-conductor chip of flow testing division produces deviation, and also delicate difference of the formation position of potting resin, and the detection performance of each flow sensor produces deviation.Therefore, in order to suppress the aberrations in property of each flow sensor, the correction of performance need to be detected to each flow sensor, the performance correction operation in the manufacturing process that carries out flow sensor need to be appended.Especially,, in the time that performance correction operation becomes longer, also exist the throughput rate in the manufacturing process of flow sensor to reduce, the problem that the cost of flow sensor rises.And, because potting resin does not utilize the promotion of the sclerosis carried out of heating, institute so that the time till potting resin sclerosis longer, the throughput rate reduction in the manufacturing process of flow sensor.
Thereby the object of the present invention is to provide a kind of aberrations in property that can suppress each flow sensor to realize performance and improve the technology of (realizing the situation that performance improves thereby also comprise raising reliability).
Above-mentioned purpose of the present invention and other object and new feature, can become clear and definite according to the record of this instructions and accompanying drawing.
For the technical scheme of technical solution problem
When the summary of representational content, as described below among simple declaration the application invention disclosed.
Flow sensor in the embodiment of representative possesses: (a) the first chip carrying portion; (b) be configured in the first semi-conductor chip in above-mentioned the first chip carrying portion, above-mentioned the first semi-conductor chip has: (b1) be formed on the flow testing division on the interarea of the first Semiconductor substrate; (b2) at the barrier film with forming in the back side above-mentioned interarea opposition side, in the region relative with above-mentioned flow testing division above-mentioned the first Semiconductor substrate.At this, above-mentioned flow sensor contains framework, and this framework is mounted on above-mentioned the first semi-conductor chip and has the peristome that at least exposes above-mentioned flow testing division, and this framework is formed by the elasticity coefficient material less than the elasticity coefficient of above-mentioned the first semi-conductor chip.And the state exposing from the above-mentioned peristome of above-mentioned framework at the above-mentioned flow testing division being formed on above-mentioned the first semi-conductor chip, the packaging body that a part for above-mentioned the first semi-conductor chip is contained resin encapsulates.
In addition, the manufacture method of the flow sensor in the embodiment of representative is the manufacture method with the flow sensor of said structure.The manufacture method of above-mentioned flow sensor comprises: the operation of (a) preparing the base material with above-mentioned the first chip carrying portion; (b) prepare the operation of above-mentioned the first semi-conductor chip; (c) operation of carrying above-mentioned the first semi-conductor chip in above-mentioned the first chip carrying portion.Then, also comprise: (d) after above-mentioned (c) operation, so that above-mentioned flow testing division is contained in the mode of the above-mentioned peristome that is formed on above-mentioned framework, on above-mentioned the first semi-conductor chip, configure the operation of above-mentioned framework; (e), after above-mentioned (d) operation, the above-mentioned flow testing division that is formed on above-mentioned the first semi-conductor chip is exposed, and utilize above-mentioned packaging body by the operation of the part encapsulation of above-mentioned the first semi-conductor chip.At this, above-mentioned (e) operation comprises: the operation of (e1) preparing mold and bed die; (e2) after above-mentioned (e1) operation, be close to above-mentioned framework by making the bottom surface of above-mentioned mold, form the first space that surrounds above-mentioned flow testing division, and utilize above-mentioned mold and above-mentioned bed die to clip the operation of the above-mentioned base material that is equipped with above-mentioned the first semi-conductor chip across second space; (e3) after above-mentioned (e2) operation, make above-mentioned resin flow into the operation of above-mentioned second space.
Invention effect
If when the effect that simple declaration obtains among the disclosed invention of the application, by the invention of representative, as described below.
Can suppress the aberrations in property of each flow sensor and realize the raising of performance.
Brief description of the drawings
Fig. 1 is the circuit block diagram that represents the circuit formation of the flow sensor in embodiment 1.
Fig. 2 is the planimetric map that represents the layout formation of the semi-conductor chip of a part that forms the flow sensor in embodiment 1.
Fig. 3 is the figure that represents the actual installation formation of the flow sensor in embodiment 1, represents the figure of the formation before encapsulating with resin.Particularly, (a) be the planimetric map that represents the actual installation formation of the flow sensor in embodiment 1, (b) be the sectional view cutting off with A-A line of (a), (c) be the planimetric map that represents the back side of semi-conductor chip.
Fig. 4 (a) is the planimetric map that represents the formation of framework, is (b) sectional view cutting off with A-A line of (a), is (c) sectional view cutting off with B-B line of (a).
Fig. 5 is the figure that represents the actual installation formation of the flow sensor in embodiment 1, represents the figure of the formation after encapsulating with resin.Particularly, (a) be the planimetric map that represents the actual installation formation of the flow sensor in embodiment 1, (b) being the sectional view cutting off with A-A line of (a), is (c) sectional view cutting off with B-B line of (a).
Fig. 6 is the planimetric map that represents sealing strip to remove the actual installation formation of flow sensor afterwards.
Fig. 7 is the sectional view that represents the manufacturing process of the flow sensor in embodiment 1.
Fig. 8 represents the then sectional view of the manufacturing process of the flow sensor of Fig. 7.
Fig. 9 represents the then sectional view of the manufacturing process of the flow sensor of Fig. 8.
Figure 10 represents the then sectional view of the manufacturing process of the flow sensor of Fig. 9.
Figure 11 represents the then sectional view of the manufacturing process of the flow sensor of Figure 10.
Figure 12 represents the then sectional view of the manufacturing process of the flow sensor of Figure 11.
Figure 13 be represent not use elastomer thin film, only across framework, mold is pressed into the sectional view of an example of the lead frame that is equipped with semi-conductor chip.
Figure 14 represents not use framework to carry out the figure of an example of the correlation technique of resin-encapsulated.
Figure 15 (a) is the planimetric map that represents the flow sensor in variation 1, is (b) sectional view cutting off with A-A line of (a), is (c) sectional view cutting off with B-B line of (a).
Figure 16 is the figure that represents a cross section of the flow sensor in variation 1.
Figure 17 is the planimetric map that is illustrated in the structure of the flow sensor in variation 2, before resin-encapsulated.
Figure 18 is the sectional view cutting off with A-A line of Figure 17.
Figure 19 is the sectional view cutting off with B-B line of Figure 17.
Figure 20 is the figure that represents the actual installation formation of the flow sensor in embodiment 2, represents the figure of the formation before encapsulating with resin.Particularly, (a) be the planimetric map that represents the actual installation formation of the flow sensor in embodiment 2, (b) be the sectional view cutting off with A-A line of (a), (c) be the sectional view cutting off with B-B line of (a), (d) be the planimetric map that represents the back side of semi-conductor chip.
Figure 21 is the figure that represents the actual installation formation of the flow sensor in embodiment 2, represents the figure of the formation after encapsulating with resin.Particularly, (a) be the planimetric map that represents the actual installation formation of the flow sensor in embodiment 2, (b) being the sectional view cutting off with A-A line of (a), is (c) sectional view cutting off with B-B line of (a).
Figure 22 is the planimetric map that represents sealing strip to remove the actual installation formation of flow sensor afterwards.
Figure 23 is the sectional view that represents the manufacturing process of the flow sensor in embodiment 2.
Figure 24 represents the then sectional view of the manufacturing process of the flow sensor of Figure 23.
Figure 25 represents the then sectional view of the manufacturing process of the flow sensor of Figure 24.
Figure 26 represents the then sectional view of the manufacturing process of the flow sensor of Figure 25.
Embodiment
In the following embodiments, describe being divided into whenever necessary multiple parts or embodiment for convenient, but except situation about especially clearly representing, they not have no relation each other, a side have the opposing party part or all variation, in detail, the relation of supplementary notes etc.
In addition, in the following embodiments, in the case of mentioning (comprising number, numerical value, amount, scope etc.) such as the quantity of key element, in situation about expressing especially and principle, be restricted to clearly situation of specific quantity etc., be not defined as specific quantity, can be specific quantity above or below.
And in the following embodiments, this inscape (also comprising key element step etc.) is considered to clearly necessary situation in situation about expressing especially and principle, might not be necessary, this is self-evident.
Equally, in the following embodiments, in the time mentioning shape, the position relationship etc. of inscape etc., in situation about expressing especially and principle, be considered to clearly really not so situation etc., also comprise in fact or similarly situation approximate with its shape etc.This is also identical for above-mentioned numerical value and scope.
In addition, at all figure for embodiment is described, same parts is marked to identical Reference numeral in principle, omit its repeat specification.Wherein, in order easily to understand accompanying drawing, in planimetric map, advantage mark shade.
(embodiment 1)
The circuit of < flow sensor forms >
First, the circuit formation of flow sensor is described.Fig. 1 is the circuit block diagram that represents the circuit formation of the flow sensor in present embodiment 1.In Fig. 1, flow sensor in present embodiment 1, first, there is the CPU (Central Processing Unit) 1 for controlling flow sensor, and, have for the input circuit 2 to this CPU1 input input signal with for exporting the output circuit 3 from the output signal of CPU1.And flow sensor is provided with the storer 4 of storage data, CPU1 reference-to storage 4, can be with reference to the data that are stored in storer 4.
Then, CPU1 is connected with the base stage of transistor Tr via output circuit 3.And the collector of this transistor Tr is connected with power ps, the emitting electrode of transistor Tr is connected with ground (GND) via heating resistor HR.Therefore, transistor Tr is controlled by CPU1.In other words, the base stage of transistor Tr is connected with CPU1 via output circuit 3, so, be transfused to the base stage of transistor Tr from the output signal of CPU1.
As a result, utilize the output signal (control signal) from CPU1, be controlled at electric current mobile in transistor Tr.When the output signal due to from CPU1 is when in transistor Tr, mobile electric current becomes large, it is large that the electric current of supplying with from power ps to heating resistor HR becomes, and the heating quantitative change of heating resistor HR is large.
On the other hand, when the output signal due to from CPU1 is when in transistor Tr, mobile electric current tails off, the electric current of supplying with to heating resistor HR tails off, and the heat that adds of heating resistor HR reduces.
Known like this, in the flow sensor in present embodiment 1, be controlled at the magnitude of current mobile in heating resistor HR by CPU1, thus, controlled by CPU1 from the thermal value of heating resistor HR.
Then, in the flow sensor in present embodiment 1, be controlled at electric current mobile in heating resistor HR by CPU1, be therefore provided with and add heat control bridge HCB.This adds heat control bridge HCB and detects the thermal value of distributing from heating resistor HR, and this testing result is outputed to input circuit 2.Its result, CPU1 can input from the testing result that adds heat control bridge HCB, in view of the situation, is controlled at electric current mobile in transistor Tr.
Particularly, as shown in Figure 1, add heat control bridge HCB and between reference voltage Vref1 and ground (GND), there is the resistive element R1～resistive element R4 that forms bridge.As with upper type form adding in heat control bridge HCB, by the gas after heating resistor HR heating for example, than only high certain uniform temperature (Δ T, of suction temperature, 100 DEG C) situation under, set the resistance value of resistive element R1～resistive element R4 taking the potential difference (PD) of the current potential of node A and the current potential of Node B as the mode of 0V., form the mode that resistive element R1～resistive element R4 of adding heat control bridge HCB connects between reference voltage Vref1 and ground (GND) side by side with member of formation that resistive element R1 and resistive element R3 are connected in series with by the member of formation that resistive element R2 and resistive element R4 are connected in series and form bridge.And the tie point of resistive element R1 and resistive element R3 is node A, the tie point of resistive element R2 and resistive element R4 is Node B.
Now, by the gas after heating resistor HR heating with form the resistive element R1 that adds heat control bridge HCB and contact.Therefore,, due to the thermal value from heating resistor HR, the resistance value that forms the resistive element R1 that adds heat control bridge HCB is main changing.Like this, when the resistance value of resistive element R1 changes, the potential difference (PD) between node A and Node B changes.The potential difference (PD) of this node A and Node B is transfused to CPU1 via input circuit 2, so the potential difference (PD) of CPU1 based on node A and Node B is controlled at electric current mobile in transistor Tr.
Particularly, CPU1 is controlled at electric current mobile in transistor Tr, makes the potential difference (PD) of node A and Node B become 0V, controls the thermal value from heating resistor HR.In other words, known: in the flow sensor in present embodiment 1, FEEDBACK CONTROL is carried out in the output of CPU1 based on adding heat control bridge HCB, by the gas by after heating resistor HR heating for example, than the only certain value of high certain uniform temperature (Δ T,, 100 DEG C) of suction temperature.
Then, the flow sensor in present embodiment 1 has the temperature sensor bridge TSB for detection of the flow of gas.This temperature sensor bridge TSB has 4 temperature detecting resistance bodies that form bridge between reference voltage Vref2 and ground (GND).These 4 temperature detecting resistance bodies are made up of 2 upstream temperature detecting resistance body UR1, UR2 and 2 downstream temperature detecting resistance body BR1, BR2.
, the direction of the direction indication gas flow of the arrow of Fig. 1, is provided with upstream temperature detecting resistance body UR1, UR2 at the upstream side of the direction of this gas flow, is provided with downstream temperature detecting resistance body BR1, BR2 in downstream.These upstreams temperature detecting resistance body UR1, UR2 are configured to the distance of heating resistor HR identical with downstream temperature detecting resistance body BR1, BR2.
In temperature sensor bridge TSB, upstream temperature detecting resistance body UR1 and downstream temperature detecting resistance body BR1 are connected in series between reference voltage Vref2 and ground (GND), and the tie point of this upstream temperature detecting resistance body UR1 and downstream temperature detecting resistance body BR1 is node C.
On the other hand, upstream temperature detecting resistance body UR2 and downstream temperature detecting resistance body BR2 are connected in series between ground (GND) and reference voltage Vref2, and the tie point of this upstream temperature detecting resistance body UR2 and downstream temperature detecting resistance body BR2 is node D.And the current potential of the current potential of node C and node D is transfused to CPU1 via input circuit 2.And, set each resistance value of upstream temperature detecting resistance body UR1, UR2 and downstream temperature detecting resistance body BR1, BR2, when windless condition that the flow that makes gas mobile in the direction of arrow is zero, the poor current potential of the current potential of the current potential of node C and node D becomes 0V.
Particularly, upstream temperature detecting resistance body UR1, UR2 and downstream temperature detecting resistance body BR1, BR2 are configured to apart from the distance of heating resistor HR and equate and resistance value also equates.Therefore, known in temperature sensor bridge TSB, without sight, in the time being windless condition, the poor current potential of node C and node D is 0V with the thermal value of heating resistor HR.
The action > of < flow sensor
Flow sensor in present embodiment 1 forms as aforesaid way, below, with reference to Fig. 1, its action is described.First, CPU1 is the base stage output signal output (control signal) to transistor Tr via output circuit 3, makes electric current flow through transistor Tr.Like this, electric current flows to the heating resistor HR being connected with the emitting electrode of transistor Tr from the power ps being connected with the collector of transistor Tr.Therefore, heating resistor HR heating.And the gas after the heating heating of origin spontaneous heating resistive element HR adds heat control bridge HCB resistive element R1 to forming heats.
Now, set each resistance value of resistive element R1～R4, at the gas being heated by heating resistor HR only in for example, situation higher than uniform temperature (, 100 DEG C), make to add the node A of heat control bridge HCB and the poor current potential of Node B is 0V.Therefore, for example at the gas by after heating resistor HR heating only higher than uniform temperature (for example, 100 DEG C) situation under, the poor current potential adding between node A and the Node B of heat control bridge HCB is 0V, this difference current potential (0V) is transfused to CPU1 via input circuit 2.And, identify from the output signal (control signal) that adds CPU1 that the poor current potential of heat control bridge HCB is 0V and via output circuit 3, the base stage of transistor Tr is exported the magnitude of current for maintaining the statusquo.
On the other hand, (for example depart from uniform temperature by the gas after heating resistor HR heating, 100 DEG C) situation under, add that between the node A of heat control bridge HCB and Node B, to produce be not the poor current potential of 0V, this difference current potential is transfused to CPU1 via input circuit 2.And, identify and produce the output signal (control signal) that via output circuit 3, the base stage output difference current potential of transistor Tr is become 0V from the CPU1 of poor current potential that adds heat control bridge HCB.
For example, by the gas after heating resistor HR heating higher than uniform temperature (for example producing, 100 DEG C) the situation of poor current potential of direction under, the base stage output control signal (output signal) that in transistor Tr mobile electric current reduce of CPU1 to transistor Tr.To this, by the gas after heating resistor HR heating lower than uniform temperature (for example producing, 100 DEG C) in the situation of the poor current potential of direction, the base stage output control signal (output signal) that in transistor Tr mobile electric current increase of CPU1 to transistor Tr.
As with upper type, CPU1 is based on carrying out FEEDBACK CONTROL from the output signal that adds heat control bridge HCB, and the poor current potential that makes to add between node A and the Node B of heat control bridge HCB becomes 0V (equilibrium state).Thus, in known flow sensor in present embodiment 1, be controlled as uniform temperature by the gas after heating resistor HR heating.
Then, the action of the flow of measuring the gas in the flow sensor in present embodiment 1 is described.First, the situation of windless condition is described.Set each resistance value of upstream temperature detecting resistance body UR1, UR2 and downstream temperature detecting resistance body BR1, BR2, when windless condition that the flow that makes flowing gas in the direction of arrow is zero, the poor current potential of the current potential of the node C of temperature sensor bridge TSB and the current potential of node D is 0V.
Particularly, upstream temperature detecting resistance body UR1, UR2 and downstream temperature detecting resistance body BR1, BR2 are configured to apart from the distance of heating resistor HR and equate and resistance value also equates.Therefore, in temperature sensor bridge TSB, irrelevant with the thermal value of heating resistor HR, in the time being windless condition, the poor current potential of node C and node D becomes 0V, and this difference current potential (0V) is transfused to CPU1 via input circuit 2.And the flow that the CPU1 that to identify from the poor current potential of temperature sensor bridge TSB be 0V is identified in gas mobile in the direction of arrow is zero, the flow sensor output via output circuit 3 from present embodiment 1 represents the output signal that gas flow Q is zero.
Then, consider gas mobile situation in the direction of arrow of Fig. 1.In this case, as shown in Figure 1, be configured in upstream temperature detecting resistance body UR1, the UR2 of upstream side of the flow direction of gas by gas cooled mobile in the direction of arrow.Therefore, the temperature of upstream temperature detecting resistance body UR1, UR2 reduces.To this, due to gas flow downstream temperature detecting resistance body BR1, BR2 by after heating resistor HR heating, so be configured in the downstream temperature detecting resistance body BR1 in the downstream of the flow direction of gas, the temperature rise of BR2.Its result, the balance of temperature sensor bridge TSB crumbles, and between the node C of temperature sensor bridge TSB and node D, produces non-vanishing poor current potential.
This difference current potential is transfused to CPU1 via input circuit 2.And, identify that to be identified in the flow of gas mobile in the direction of arrow from the non-vanishing CPU1 of poor current potential of temperature sensor bridge TSB non-vanishing.Then, CPU1 reference-to storage 4.In storer 4, store and make poor current potential and contrast table (form) corresponding to gas flow, so the CPU1 that has accessed storer 4 calculates gas flow Q according to the contrast table that is stored in storer 4.Like this, the gas flow Q being calculated by CPU1 via output circuit 3 flow sensor from present embodiment 1 export.Known as previously discussed, adopt the flow sensor in present embodiment 1, can obtain the flow of gas.
The layout of < flow sensor forms >
Then, the layout of the flow sensor in present embodiment 1 is formed and described.For example, the flow sensor in the present embodiment 1 shown in Fig. 1 is formed on 2 semi-conductor chips.Particularly, heating resistor HR, add heat control bridge HCB and temperature sensor bridge TSB is formed on a semi-conductor chip, CPU1, input circuit 2, output circuit 3 and storer 4 etc. are formed on other semi-conductor chip.Below, to being formed with heating resistor HR, the layout that adds the semi-conductor chip of heat control bridge HCB and temperature sensor bridge TSB forms and describes.
Fig. 2 is the planimetric map that represents the layout formation of the semi-conductor chip CHP1 of a part for the formation flow sensor in present embodiment 1.First, as shown in Figure 2, semi-conductor chip CHP1 rectangular shaped, gas from the left side of this semi-conductor chip CHP1 to the right (direction of arrow) flow.And as shown in Figure 2, the rear side of the semi-conductor chip CHP1 of rectangular shaped is formed with the barrier film DF of rectangular shape.Barrier film DF represents the thin plate region of the thickness attenuation of semi-conductor chip CHP1., be formed with other the thin thickness in region of semi-conductor chip CHP1 of Thickness Ratio in the region of barrier film DF.
As shown in Figure 2, at the surf zone of the semi-conductor chip CHP1 relative with the region, the back side that is formed on like this barrier film DF, be formed with flow testing division FDU.Particularly, be formed with heating resistor HR at the central portion of this flow testing division FDU, the surrounding of this heating resistor HR is formed with and forms the resistive element R1 that adds heat control bridge.And, be formed with in the outside of flow testing division FDU and form the resistive element R2～R4 that adds heat control bridge.Control and add heat control bridge by the resistive element R1～R4 of such formation.
Particularly, the resistive element R1 that formation adds heat control bridge is formed near of heating resistor HR, so can make resistive element R1 precision reflect well the temperature of the gas of the heating heating of origin spontaneous heating resistive element HR.
On the other hand, resistive element R2～R4 that formation adds heat control bridge is configured to leave heating resistor HR, so, can be difficult to be subject to the impact from the heating of heating resistor HR.
Therefore, resistive element R1 can be configured to responsive to temperature to the gas by after heating resistor HR heating and react, and resistive element R2～R4 is configured to and can be difficult to be subject to the impact of heating resistor HR and easily resistance value be maintained to certain value.Therefore, can improve the accuracy of detection that adds heat control bridge.
And, configure upstream temperature detecting resistance body UR1, UR2 and downstream temperature detecting resistance body BR1, BR2 to clip the mode of the heating resistor HR that is formed on flow testing division FDU.Particularly, gas forms upstream temperature detecting resistance body UR1, UR2, formation downstream, downstream temperature detecting resistance body BR1, the BR2 of the gas flow direction of arrow at the upstream side of flow arrow direction.
By as formed with upper type, the in the situation that gas being mobile in the direction of arrow, can make the temperature of upstream temperature detecting resistance body UR1, UR2 reduce, and, can make the temperature rise of downstream temperature detecting resistance body BR1, BR2.Utilize this sample loading mode to be configured in upstream temperature detecting resistance body UR1, the UR2 of flow testing division FDU and downstream temperature detecting resistance body BR1, BR2 and formation temperature sensor bridge.
Above-mentioned heating resistor HR, upstream temperature detecting resistance body UR1, UR2 and downstream temperature detecting resistance body BR1, BR2 can be by for example forming after the semiconductive thin film of metal film, polysilicon (polysilicon, polycrystal silicon) etc. of platinum (platinum, platina) etc. in the method for utilizing sputtering method, CVD (Chemical Vapor Deposition, chemical vapor deposition) method etc., utilize the method for ion etching etc. carry out patterning and form.
The heating resistor HR that this sample loading mode forms, resistive element R1～R4 that formation adds heat control bridge and upstream temperature detecting resistance body UR1, the UR2 that forms temperature sensor bridge are connected with distribution WL1 separately with downstream temperature detecting resistance body BR1, BR2, are led to pad (pad, the pad) PD1 along the following configuration of semi-conductor chip CHP1.
As previously discussed, the semi-conductor chip CHP1 of a part for the formation flow sensor in present embodiment 1 is formed by layout.Actual flow sensor comprises: be formed with heating resistor HR, add a semi-conductor chip of heat control bridge HCB and temperature sensor bridge TSB; With another semi-conductor chip that is formed with CPU1, input circuit 2, output circuit 3 and storer 4 etc., form the structure on the substrate of these semi-conductor chip actual installation.
Below, to describing as the flow sensor in the present embodiment 1 forming with upper type actual installation.
The actual installation of the flow sensor in < embodiment 1 forms >
Fig. 3 is the figure that represents the actual installation formation of the flow sensor FS1 in present embodiment 1, is the figure that represents to encapsulate with resin previous formation.Particularly, Fig. 3 (a) is the planimetric map that represents the actual installation formation of the flow sensor FS1 in present embodiment 1.Fig. 3 (b) is the sectional view cutting off with A-A line of Fig. 3 (a), and Fig. 3 (c) is the planimetric map that represents the back side of semi-conductor chip CHP1.
First,, as shown in Fig. 3 (a), the flow sensor FS1 in present embodiment 1 has lead frame (lead frame) LF for example being formed by copper product.This lead frame LF has the TAB1 of chip carrying portion and the TAB2 of chip carrying portion in the inside being surrounded by sealing strip (dam bar, the closeouts) DM that forms outer frame body.And, on the TAB1 of chip carrying portion, be equipped with semi-conductor chip CHP1, on the TAB2 of chip carrying portion, be equipped with semi-conductor chip CHP2.
Semi-conductor chip CHP1 rectangular shaped, is formed with flow testing division FDU in substantial middle portion.And it is upper that the distribution WL1 being connected with flow testing division FDU is formed on semi-conductor chip CHP1, this distribution WL1 is connected with multiple pads (pad) PD1 that the one side along semi-conductor chip CHP1 forms.In other words, flow testing division FDU is connected by distribution WL1 with multiple pad PD1.These pads PD1 is connected via the metal wire W1 for example being formed by gold thread (spun gold) with lead-in wire (lead) LD1 that is formed on lead frame LF.Be formed on the lead-in wire LD1 of lead frame LF and then be connected by the metal wire W2 for example being formed by gold thread with the pad PD2 that is formed on semi-conductor chip CHP2.
Semi-conductor chip CHP2 is formed with by the semiconductor element of MISFET (Metal Insulator Semiconductor Field Effect Transistor (metal-insulator-semiconductor field effect transistor)) etc., the integrated circuit that distribution forms.Particularly, form the CPU1 shown in pie graph 1, input circuit 2, output circuit 3 or, the integrated circuit of storer 4 etc.These integrated circuit are connected with the pad PD2, the pad PD3 that bring into play function as external connection terminals.And the pad PD3 that is formed on semi-conductor chip CHP2 is connected by the metal wire W3 for example being formed by gold thread with the lead-in wire LD2 that is formed on lead frame LF.Known like this, the semi-conductor chip CHP1 that is formed with flow testing division FDU is connected by the lead-in wire LD1 that is formed on lead frame LF with the semi-conductor chip CHP2 that is formed with control circuit.Wherein, although not shown in Fig. 3, in the outmost surface of semi-conductor chip CHP1, as described later; taking with the stress buffer of bonding resin, surface protection, insulation etc. as object, and can be formed with polyimide film (polyimide film).
Then, as shown in Fig. 3 (b), be formed with the TAB1 of chip carrying portion at lead frame LF, on the TAB1 of this chip carrying portion, be equipped with semi-conductor chip CHP1.This semi-conductor chip CHP1 is bonding by jointing material (binding material, bond) ADH1 and the TAB1 of chip carrying portion.Be formed with barrier film DF (thin plate part) at the back side of semi-conductor chip CHP1, be formed with flow testing division FDU on the surface of the semi-conductor chip CHP1 of relative with barrier film DF (opposed).On the other hand, be present in barrier film DF below the bottom of the TAB1 of chip carrying portion be formed with peristome OP1.Wherein, represented be present in barrier film DF below the bottom of the TAB1 of chip carrying portion be formed with the example of peristome OP1, but the thought of the technology in present embodiment 1 is not limited to this, also can use the lead frame LF that is not formed with peristome OP1.
And, as shown in Fig. 3 (b), the surface of semi-conductor chip CHP1 (above), except flow testing division FDU, also be formed with the pad PD1 being connected with flow testing division FDU, this pad PD1 is connected with the lead-in wire LD1 that is formed on lead frame LF by metal wire W1.And lead frame LF is also equipped with semi-conductor chip CHP2 except semi-conductor chip CHP1, semi-conductor chip CHP2 is bonding by jointing material ADH2 and the TAB2 of chip carrying portion.And the pad PD2 that is formed on semi-conductor chip CHP2 is connected by metal wire W2 with the lead-in wire LD1 that is formed on lead frame LF.In addition, the lead-in wire LD2 that is formed on the pad PD3 of semi-conductor chip CHP2 and is formed on lead frame LF is electrically connected by metal wire W3.
For the jointing material ADH2 of the jointing material ADH1 of bonding semi-conductor chip CHP1 and the TAB1 of chip carrying portion, bonding semi-conductor chip CHP2 and the TAB2 of chip carrying portion, for example can use taking the thermosetting resin of epoxy resin (epoxy resin), urethane resin (polyurethane resin) etc. as the jointing material of composition, jointing material taking the thermoplastic resin of polyimide resin (polyimide resin), acryl resin (acrylic resin), fluororesin etc. as composition.
For example, semi-conductor chip CHP1 and the TAB1's of chip carrying portion is bonding, can be by applying jointing material ADH1, silver paste etc. or utilizing the jointing material of sheet to carry out as shown in Fig. 3 (c).Fig. 3 (c) is the planimetric map that represents the back side of semi-conductor chip CHP1.As shown in Fig. 3 (c), be formed with barrier film DF at the back side of semi-conductor chip CHP1, be coated with jointing material ADH1 in the mode of surrounding this barrier film DF.In addition, in Fig. 3 (c), represent that the mode of surrounding barrier film DF with quadrangle form applies the example of jointing material ADH1, but be not limited to this, for example, can apply jointing material ADH1 in the mode of the encirclement of the shape arbitrarily barrier film DF with elliptical shape.
And, in present embodiment 1, as shown in Fig. 3 (a) and Fig. 3 (b), in a part of semi-conductor chip CHP1, be formed with framework FB.Such as rectangular shaped of this framework FB, is formed with peristome OP (FB) in inside.The flow testing division FDU that this framework FB is configured to be formed on the interarea of semi-conductor chip CHP1 exposes from peristome OP (FB), and the multiple pad PD1 that are configured to be formed on semi-conductor chip CHP1 expose the outside at framework FB.
Below the formation of this framework FB is described.Fig. 4 is the figure that represents the formation of framework FB.Fig. 4 (a) is the planimetric map that represents the formation of framework FB, and Fig. 4 (b) is the sectional view cutting off with A-A line of Fig. 4 (a).In addition, Fig. 4 (c) is the sectional view cutting off with B-B line of Fig. 4 (a).
Known as shown in Fig. 4 (a), framework FB rectangular shaped, is formed with peristome OP (FB) in the inside of the FP of frame portion.And as shown in Fig. 4 (b), Fig. 4 (c), framework FB is formed with the WP of wall portion with the parallel sided (walking abreast) of semi-conductor chip CHP1.And, as shown in Fig. 3 (b), by making this WP of wall portion and semi-conductor chip CHP1 be close to (close contact, bonding), can with the state of semi-conductor chip CHP1 contraposition under, framework FB is configured on semi-conductor chip CHP1.Now, framework FB can be bonding with semi-conductor chip CHP1, or not bonding with semi-conductor chip CHP1.Particularly, bonding in the situation that, can obtain the effect of the position deviation (dislocation) that can prevent framework FB at framework FB and semi-conductor chip CHP1.In addition, be formed on framework FB the WP of wall portion if with the corresponding setting at least one side of semi-conductor chip CHP1.
At this, the framework FB in present embodiment 1 is characterised in that: the elasticity coefficient that forms the material of framework FB is less than this point of elasticity coefficient of the material that forms semi-conductor chip CHP1.Now, elasticity coefficient refers to the spring rate of framework FB and semi-conductor chip CHP1.Spring rate is Hooke's law that the stress in elastic body and deformation the are proportional to one another ratio fixed number (constant) while being expressed as the form of " stress and deformation are proportional ".
For example, preferably the comparison of the elasticity coefficient of framework FB and the elasticity coefficient of semi-conductor chip CHP1 compares at temperature 25 DEG C (room temperatures).In addition, the comparison of elasticity coefficient can be carried out between the elasticity coefficient of the base material of the elasticity coefficient of framework FB and formation semi-conductor chip CHP1.For example, in the case of the base material of formation semi-conductor chip CHP1 is formed by monocrystalline silicon, can utilize the material that at room temperature elasticity coefficient is little compared with monocrystalline silicon to form framework FB.
Above, being relatively illustrated of the elasticity coefficient to framework FB and semi-conductor chip CHP1, its basic concept is to use the framework FB of hardness little (softness) compared with semi-conductor chip CHP1.In this so-called hardness, any one that can use Vickers hardness (Vickers hardness), micro-vickers hardness (micro Vickers hardness), Brinell hardness (Brinell hardness) or Rockwell's hardness (Rockwell hardness) under room temperature for example compares.
Particularly, the framework FB that hardness is little compared with semi-conductor chip CHP1 can use the macromolecular material of the thermosetting resin taking PBT resin, ABS resin, PC resin, nylon resin, PS resin, fluororesin etc. as the thermoplastic resin of composition, taking epoxy resin, phenolics etc. as composition, elastomeric material, the elastic body etc. taking Teflon (registered trademark), polyurethane, fluorine etc. as composition.
As framework FB can use ejection formation (injection molding), transfer printing forming process potting resin in mould to carry out injection molded (mould molding) and form or utilize above-mentioned material form thin-film member, plate shape part.
In addition, the framework FB that utilizes the macromolecular material of thermosetting resin, thermoplastic resin, elastomeric material, elastic body etc. to form, also can self have fusible jointing material as framework FB uses, and, also can filling glass, the organic filler of inorganic filler, the carbon etc. of silicon dioxide, mica, talcum etc.
In addition,, by the carrying out punching press, roll-in processing or casting with the little metal material of silicon resilience in comparison coefficient and be shaped of brass, aluminium alloy, aldary etc., also can form framework FB.
In flow sensor FS1 in present embodiment 1, the actual installation of the flow sensor FS1 before encapsulating with resin forms as aforesaid way formation, below, the actual installation of the flow sensor FS1 after encapsulating with resin is formed and described.
Fig. 5 is the figure that represents that the actual installation of the flow sensor FS1 in present embodiment 1 forms, and is the figure of the formation after representing to encapsulate with resin.Particularly, Fig. 5 (a) is the planimetric map that represents the actual installation formation of the flow sensor FS1 in present embodiment 1.Fig. 5 (b) is the sectional view cutting off with A-A line of Fig. 5 (a), and Fig. 5 (c) is the sectional view cutting off with B-B line of Fig. 5 (a).
In flow sensor FS1 in present embodiment 1, as shown in Fig. 5 (a), from the state that is formed on the peristome OP (FB) of framework FB and exposes, form the structure (First Characteristic point) that a part of semi-conductor chip CHP1 and the entirety of semi-conductor chip CHP2 are covered by resin M R at the flow testing division FDU that is formed on semi-conductor chip CHP1., in present embodiment 1, by except the region that is formed with flow testing division FDU be equipped with the region of semi-conductor chip CHP1 the region of framework FB and the whole region of semi-conductor chip CHP2 is unified encapsulates with resin M R.
Above-mentioned resin M R can use the thermoplastic resin of thermosetting resin, polycarbonate (polycarbonate), polyethylene terephthalate (polyethylene terephthalate) of such as epoxy resin, phenolics (phenol resin, phenol resin) etc. etc., and, also can in resin, sneak into the compaction material of glass and mica etc.
Utilize the encapsulation that this resin M R carries out under state fixing the semi-conductor chip CHP1 that be formed with flow testing division FDU, carrying out with mould, so, the position deviation (dislocation) of semi-conductor chip CHP1 can be suppressed, and a part and the semi-conductor chip CHP2 of resin M R packaged semiconductor CHP1 can be used.Therefore, adopt the flow sensor FS1 in present embodiment 1, mean the position deviation that can suppress each flow sensor FS1, and can use a part of resin M R packaged semiconductor CHP1 and the whole region of semi-conductor chip CHP2, mean the deviation of the position that can suppress the flow testing division FDU that is formed on semi-conductor chip CHP1.
Its result, according to present embodiment 1, can make the position of flow testing division FDU of the flow that detects gas consistent in each flow sensor FS1, therefore, can obtain and can be suppressed at the remarkable result that detects the aberrations in property of gas flow in each flow sensor FS1.
Then, in flow sensor FS1 in present embodiment 1, as shown in Fig. 5 (b), the height of framework FB in the both sides of the flow testing division FDU that encirclement is exposed or the height of resin M R (packaging body) are higher than the surperficial height (Second Characteristic point) of the semi-conductor chip CHP1 that comprises flow testing division FDU., around the flow testing division FDU exposing is surrounded by framework FB, and the height of the framework FB of encirclement flow testing division FDU is higher than the height of flow testing division FDU.When have in such present embodiment 1 Second Characteristic point time, can prevent from colliding at parts such as installation whens assembling of parts the flow testing division FDU exposing, so, can prevent the breakage of the semi-conductor chip CHP1 that is formed with flow testing division FDU.In other words, the height of the framework FB of encirclement flow testing division FDU is higher than the height of the flow testing division FDU exposing.Therefore, in the time that parts come in contact, first, contact with highly high framework FB, so, can prevent that the face (XY face) that exposes of the highly low semi-conductor chip CHP1 that comprises flow testing division FDU from contacting with parts and causing semi-conductor chip CHP1 that breakage occurs.
Particularly, in present embodiment 1, configure framework FB in a part of semi-conductor chip CHP1, the elasticity coefficient of this framework FB is less than the elasticity coefficient of semi-conductor chip CHP1.In other words, framework FB is made up of the little material of hardness of hardness ratio semi-conductor chip CHP1.Therefore,, in the situation that parts contact with framework FB, can utilize the distortion impact-absorbing of the smaller framework FB of hardness, therefore, can suppress to impact being passed to the semi-conductor chip CHP1 being configured under framework FB, thus, can effectively prevent the breakage of semi-conductor chip CHP1.
In addition, the height of framework FB and resin M R (packaging body) is higher than the surperficial height of the semi-conductor chip CHP1 that comprises flow testing division FDU, the height of framework FB can be higher than the height of resin M R (packaging body), also can be lower than it, and also can be on a face.
In addition, in present embodiment 1, in order to prevent that resin M R from invading the inner space of barrier film DF, the mode that prerequisite is for example to obtain the barrier film DF to surround the back side that is formed on semi-conductor chip CHP1 applies the structure of jointing material ADH1.And, as shown in Fig. 5 (b) and Fig. 5 (c), peristome OP1 is formed on the bottom that is formed on the TAB1 of chip carrying portion of the below that is positioned at barrier film DF at the back side of semi-conductor chip CHP1, and, at the resin M R at the back side that covers the TAB1 of chip carrying portion, peristome OP2 is set.
Thus, while adopting the flow sensor FS1 of present embodiment 1, the inner space of barrier film DF is communicated with the space outerpace of flow sensor FS1 with the peristome OP2 that is formed on resin M R via the peristome OP1 of the bottom that is formed on the TAB1 of chip carrying portion.As a result, can make the pressure of inner space of barrier film DF and the pressure of the space outerpace of flow sensor FS1 equate, can suppress stress and put on barrier film DF.
As with upper type, the flow sensor FS1 in present embodiment 1 is formed by actual installation, but in actual flow sensor FS1, with after resin M R encapsulation, the sealing strip DM of the outer frame body that forms lead frame LF is removed.Fig. 6 is the planimetric map that has represented to remove the actual installation formation of the flow sensor FS1 after sealing strip DM.Known as shown in Figure 6, by cutting off sealing strip DM, multiple electric signal independently can be taken out from multiple lead-in wire LD2.
The manufacture method > of the flow sensor in < present embodiment 1
Flow sensor FS1 in present embodiment 1 forms as aforesaid way, below, with reference to Fig. 7～Figure 14, its manufacture method is described.The manufacturing process in the cross section cutting off with A-A line in Fig. 7～Figure 14 presentation graphs 5 (a).
First, as shown in Figure 7, Preparation Example is as the lead frame LF being formed by copper product.This lead frame LF has formed the TAB1 of chip carrying portion, the TAB2 of chip carrying portion, lead-in wire LD1 and lead-in wire LD2, and the bottom of the TAB1 of chip carrying portion is formed with peristome OP1.
Then, as shown in Figure 8, on the TAB1 of chip carrying portion, carry semi-conductor chip CHP1, on the TAB2 of chip carrying portion, carry semi-conductor chip CHP2.Particularly, with jointing material ADH1, semi-conductor chip CHP1 is connected on the TAB1 of chip carrying portion that is formed on lead frame LF.Now, so that the barrier film DF that is formed on semi-conductor chip CHP1 and the mode that the peristome OP1 of bottom that is formed on the TAB1 of chip carrying portion is communicated with are mounted in semi-conductor chip CHP1 on the TAB1 of chip carrying portion.In addition, form flow testing division FDU, distribution (not shown) and pad PD1 at semi-conductor chip CHP1 by common semiconductor fabrication process.And, for example, by anisotropic etching, form barrier film DF in the position at the back side relative with the surperficial flow testing division FDU that is formed on semi-conductor chip CHP1.In addition, be formed on the TAB2 of chip carrying portion of lead frame LF and utilize jointing material ADH2 to be also equipped with semi-conductor chip CHP2.Utilize in advance common semiconductor fabrication process, form semiconductor element (not shown), distribution (not shown), pad PD2, the pad PD3 of MISFET etc. at this semi-conductor chip CHP2.
Then, as shown in Figure 9, the pad PD1 that utilizes metal wire (wire) W1 to be connected to form at semi-conductor chip CHP1 and the lead-in wire LD1 (metal wire bonding (lead-in wire is connected)) that is formed on lead frame LF.Equally, the pad PD2 that utilizes lead-in wire LD1 and metal wire W2 to be connected to form at semi-conductor chip CHP2, the pad PD3 that utilizes lead-in wire LD2 and metal wire W3 to be connected to form at semi-conductor chip CHP2.Metal wire W1～W3 is for example formed by gold thread.
Afterwards, as shown in figure 10, on semi-conductor chip CHP1, carry framework FB.Particularly, to framework, FB carries, make being formed in inner peristome OP (FB), built-in (comprising) have be formed on semi-conductor chip CHP1 flow testing division FDU (, by around), and dispose the multiple pad PD1 that are formed on semi-conductor chip CHP1 in the outside of framework FB.Thus, when can making flow testing division FDU and multiple pad PD1 expose, framework FB is mounted on semi-conductor chip CHP1.
Now, the framework FB in present embodiment 1 has the WP of wall portion, therefore, can make a side of this WP of wall portion and semi-conductor chip CHP1 be close to, and, framework FB is configured on semi-conductor chip CHP1.Thus, can improve the positioning precision that is mounted in the framework FB on semi-conductor chip CHP1, can make reliably flow testing division FDU expose from the peristome OP (FB) that is formed on framework FB, and can prevent and the contacting of framework FB and pad PD1.
At this, framework FB and semi-conductor chip CHP1 can be bonding, also can be not bonding.Wherein, from suppressing the viewpoint of the position deviation that carries the framework FB semi-conductor chip CHP1, preferably make framework FB and semi-conductor chip CHP1 bonding.
Afterwards, as shown in figure 11, be formed with a part (injection moulding (casting) operation) of surface, metal wire W1, lead-in wire LD1, metal wire W2, the semi-conductor chip CHP2 of the semi-conductor chip CHP1 in the near zone of pad PD1 whole of interarea, metal wire W3 and lead-in wire LD2 with resin M R encapsulation.Particularly, as shown in figure 11, clip the semi-conductor chip CHP1 that is equipped with framework FB and the lead frame LF that is equipped with semi-conductor chip CHP2 across second space with mold UM and bed die BM.Then, the in the situation that of heating, make resin M R flow into this second space, be formed with thus a part of surface, metal wire W1, lead-in wire LD1, metal wire W2, the semi-conductor chip CHP2 of the semi-conductor chip CHP1 in the near zone of pad PD1 whole of interarea, metal wire W3 and lead-in wire LD2 with resin M R encapsulation.Now, as shown in figure 11, the inner space of barrier film DF isolates by jointing material ADH1 and above-mentioned second space, so, when with resin M R filling second space, also can prevent that resin M R from invading the inner space of barrier film DF.
And, in present embodiment 1, can will under state fixing the semi-conductor chip CHP1 that be formed with flow testing division FDU, carry out with mould via framework FB, so, can suppress the position deviation of semi-conductor chip CHP1, and, with a part and the semi-conductor chip CHP2 of resin M R packaged semiconductor CHP1.In this case, according to the manufacture method of the flow sensor FS1 in present embodiment 1, mean the position deviation that can suppress each flow sensor, and, with a part of resin M R packaged semiconductor CHP1 and the whole region of semi-conductor chip CHP2, mean the position deviation that can suppress the flow testing division FDU that is formed on semi-conductor chip CHP1.Its result, according to present embodiment 1, can make the position of flow testing division FDU of the flow that detects gas consistent in each flow sensor, can obtain and can be suppressed at the remarkable result that the aberrations in property that detects gas flow occurs in each flow sensor.
At this, the manufacture method of flow sensor FS1 in present embodiment 1 is characterised in that, mold UM is abutted to aspect ratio across elastomer thin film LAF and be formed on the high framework FB of height of the flow testing division FDU of semi-conductor chip CHP1, and clip the lead frame LF that is equipped with semi-conductor chip CHP1 with bed die BM and mold UM.
Thus, according to present embodiment 1, guarantee to be formed on the flow testing division FDU of semi-conductor chip CHP1 and the first space S P1 (confined space) that near zone surrounds thereof, and, for example can encapsulate and form the surf zone of region as the semi-conductor chip CHP1 of representative taking pad.In other words, according to present embodiment 1, can make the flow testing division FDU and the near zone thereof that are formed on semi-conductor chip CHP1 expose, and encapsulation form the surf zone of region as the semi-conductor chip CHP1 of representative taking pad.
As mentioned above, the essential function of framework FB, in the time that mold UM is abutted to framework FB, guarantee the first space S P1 (confined space) of flow testing division FDU and near zone encirclement thereof, in order to realize this essential function, the in the situation that of disposing framework FB on semi-conductor chip CHP1, can obtain the height of framework FB higher than the formation of the height of flow testing division FDU.; the height of framework FB is higher than the formation of the height of flow testing division FDU; from the viewpoint of manufacture method; it is the formation that the first space S P1 (confined space) of guaranteeing flow testing division FDU and the near zone thereof to surround adopts for object; utilize this formation; can make to be formed on flow testing division FDU and near zone exposes, and encapsulation forms the surf zone of region as the semi-conductor chip CHP1 of representative taking pad.Further, in present embodiment 1, the high framework FB of aspect ratio flow testing division FDU is set on semi-conductor chip CHP1, therewith, can utilizes the folder of mold UM to try hard to keep and protect the flow testing division FDU exposing from the peristome OP (FB) of framework FB.
On the other hand, formation for the height of framework FB higher than the height of flow testing division FDU, during from the viewpoint of the structure of flow sensor FS1, can also grasp can peventing member installation assembling time etc. the parts structure of colliding the flow testing division FDU exposing, thus, can obtain the damaged advantage that can prevent the semi-conductor chip CHP1 that is formed with flow testing division FDU.In other words, the formation for the height of framework FB higher than the height of flow testing division FDU, is the formation that can play from two sides of the viewpoint of the viewpoint of manufacture method and structure significant effect.
And the framework FB in present embodiment 1 is made up of the little material of hardness ratio semi-conductor chip CHP1, utilizes this formation, framework FB also has other function.Below, the other function of this framework FB is described.
The manufacture method of flow sensor FS1 in present embodiment 1 is characterised in that, in the time clipping with mold UM and bed die BM the lead frame LF that is equipped with semi-conductor chip CHP1, be equipped with the lead frame LF of semi-conductor chip CHP1 and mold UM and between be provided with framework FB and elastomer thin film LAF.
For example, there is dimensional discrepancy in the thickness of each semi-conductor chip CHP1, therefore, in the case of the average thin thickness of the Thickness Ratio of semi-conductor chip CHP1, in the time clipping with mold UM and bed die BM the lead frame LF that is equipped with semi-conductor chip CHP1, produce gap, resin M R is likely leaked to flow testing division FDU from this gap.
On the other hand, in the case of the average thickness of the Thickness Ratio of semi-conductor chip CHP1 is thick, in the time clipping with mold UM and bed die BM the lead frame LF that is equipped with semi-conductor chip CHP1, the power that puts on semi-conductor chip CHP1 becomes large, the problem that exists semi-conductor chip CHP1 to break.
So, in present embodiment 1, for the resin on flow testing division FDU that prevents that the thickness deviation of above-mentioned semi-conductor chip CHP1 from causing is revealed or the breaking of semi-conductor chip CHP1, design be equipped with the lead frame LF of semi-conductor chip CHP1 and mold UM and between (existence) elastomer thin film LAF and framework FB are set.Thus, for example, in the case of the average thin thickness of the Thickness Ratio of semi-conductor chip CHP1, in the time clipping with mold UM and bed die BM the lead frame LF that is equipped with semi-conductor chip CHP1, although generation gap, but can use this gap of elastomer thin film LAF filling, therefore, can prevent from revealing to the resin on semi-conductor chip CHP1.
On the other hand, in the case of the average thickness of the Thickness Ratio of semi-conductor chip CHP1 is thick, in the time clipping with mold UM and bed die BM the lead frame LF that is equipped with semi-conductor chip CHP1, elastomer thin film LAF and framework FB are softer than semi-conductor chip CHP1, therefore, the size of the thickness direction of elastomer thin film LAF and framework FB changes, to make to absorb the thickness of semi-conductor chip CHP1.Thus, even if the average thickness of the Thickness Ratio of semi-conductor chip CHP1 is thick, also can prevent from, more than required, semi-conductor chip CHP1 is applied to power, result, can prevent breaking of semi-conductor chip CHP1.
,, according to the manufacture method of the flow sensor in present embodiment 1, semi-conductor chip CHP1 is pushed across elastomer thin film LAF and framework FB by mold UM.The actual installation deviation of the parts that the thickness deviation that therefore, can utilize the variation in thickness of elastomer thin film LAF and framework FB to absorb semi-conductor chip CHP1, jointing material ADH1, lead frame LF causes.
Particularly, in present embodiment 1, actual installation deviation at the thickness direction (Z direction) of parts is large, in the situation of the actual installation deviation of the parts that the thickness deviation that can not utilize the variation in thickness of elastomer thin film LAF to absorb semi-conductor chip CHP1, jointing material ADH1, lead frame LF causes, also can, by the distortion of the thickness direction of the elasticity coefficient framework FB less than the elasticity coefficient of semi-conductor chip CHP1 (Z direction), relax the folder power that puts on semi-conductor chip CHP1.As a result, according to present embodiment 1, can prevent the breakage that the isolating of semi-conductor chip CHP1, breach or crackle etc. are representative.
At this, for the actual installation deviation of absorption piece, the elasticity coefficient of elastomer thin film LAF and framework FB is less than the elasticity coefficient of semi-conductor chip CHP1 is important.Thus, even in the case of the actual installation deviation with parts, can effectively relax the folder power from mold UM that puts on semi-conductor chip CHP1 by the distortion of the variation in thickness of elastomer thin film LAF and framework FB.In other words, in present embodiment 1, the elasticity coefficient of elastomer thin film LAF and framework FB is less than the elasticity coefficient of semi-conductor chip CHP1, and the combination of the elasticity coefficient of elastomer thin film LAF and framework FB is freely.For example, the elasticity coefficient of framework FB can greatly also can be less than it than the elasticity coefficient of elastomer thin film LAF, or also can be identical.Outside, can use the macromolecular material that utilizes Teflon (registered trademark), fluororesin etc. as elastomer thin film LAF.
As mentioned above, the other function of the framework FB in present embodiment 1 is: the increase of the folder power from mold UM to semi-conductor chip CHP1 that the actual installation deviation of inhibition parts causes.And, in order to realize this function, in present embodiment 1, adopt the elasticity coefficient formation less than the elasticity coefficient of semi-conductor chip CHP1 of framework FB.Thus, in the case of the actual installation deviation of parts exists, also can be by the distortion of the thickness direction of the elasticity coefficient framework FB less than semi-conductor chip CHP1 (Z direction), relax the folder power that puts on semi-conductor chip CHP1.As a result, according to present embodiment 1, can prevent the breakage that the isolating of semi-conductor chip CHP1, breach or crackle etc. are representative.
Then, another feature of present embodiment 1 is described.As shown in figure 11, in present embodiment 1, resin M R also flows into the rear side of lead frame LF.Therefore, form peristome OP1 in the bottom of the TAB1 of chip carrying portion, therefore, resin M R can flow into from this peristome OP1 the inner space of barrier film DF sometimes.
So, in present embodiment 1, the shape of the bed die BM that clips lead frame LF is carried out to research and design.Particularly, as shown in figure 11, what form overshooting shape at bed die BM puts into part (insert die, insert mould, insert die) IP1, while clipping lead frame LF with mold UM and bed die BM, the part IP1 that puts into that is formed on the overshooting shape of bed die BM is configured to the peristome OP1 that inserts the bottom that is formed on the TAB1 of chip carrying portion.Thus, put into part IP1 and seamlessly insert peristome OP1, so, can prevent that resin M R from invading the inner space of barrier film DF from peristome OP1.That is, in present embodiment 1, what form overshooting shape at bed die BM puts into part IP1, in the time carrying out resin-encapsulated, this is put into part IP1 and inserts the peristome OP1 of the bottom that is formed on the TAB1 of chip carrying portion.
And, in present embodiment 1, carry out in shape research and design what put into part IP1.Particularly, in present embodiment 1, put into the base portion that part IP1 comprises insertion section and this insertion section of supporting of inserting peristome OP1, the sectional area of base portion is formed as larger than the sectional area of insertion section.Thus, put into part IP1 and be formed as being provided with the structure of stage portion between insertion section and base portion, the bottom surface of this stage portion and the TAB1 of chip carrying portion is close to.
By putting into part IP1 as aforesaid way forms, can obtain effect shown below.For example, in the case of being only made up of the shape of putting into part IP1 above-mentioned insertion section, insertion section is inserted in peristome OP1, and therefore, the diameter of insertion section of putting into part IP1 is slightly less than the diameter of peristome OP1.Therefore, think only being formed put into part IP1 in the situation that by insertion section, even in the case of the insertion section of putting into part IP1 is inserted into peristome OP1, also there is small gap between the insertion section of inserting and peristome OP1.In this case, resin M R invades the inner space of barrier film DF from gap sometimes.
So, in present embodiment 1, put into part IP1 and be formed as forming the formation of insertion section in the larger base portion of sectional area compared with insertion section.In this case, as shown in figure 11, in the inside of peristome OP1, be inserted into the insertion section of putting into part IP1, and, put into the base portion of part IP1 and the bottom surface of the TAB1 of chip carrying portion is close to.Its result, even putting into while producing small gap between the insertion section of part IP1 and peristome OP1, base portion also by securely by the back side that is pressed in the TAB1 of chip carrying portion, so, can prevent that resin M R from invading in peristome OP1.,, in present embodiment 1, put into part IP1 and be formed as arranging the formation of insertion section in the larger base portion of sectional area compared with insertion section.So, by combination utilize base portion to make resin M R not arrive this point of peristome OP1 and be formed on base portion and insertion section between stage portion be pressed against this point of the TAB1 of chip carrying portion, and can effectively prevent that resin M R from invading the inner space of barrier film DF via peristome OP1.
As with upper type, in present embodiment 1, clip to be equipped with across second space with mold UM and bed die BM and carrying the semi-conductor chip CHP1 of framework FB and the lead frame LF of semi-conductor chip CHP2.Then, the in the situation that of heating, make resin M R flow into this second space, be formed with a part of surface, metal wire W1, lead-in wire LD1, metal wire W2, the semi-conductor chip CHP2 of the semi-conductor chip CHP1 in the near zone of pad PD1 whole of interarea, metal wire W3 and lead-in wire LD2 with resin M R encapsulation.
Then, as shown in figure 12, in the stage of resin M R sclerosis, take out from mold UM and bed die BM the lead frame LF that is equipped with semi-conductor chip CHP1 and semi-conductor chip CHP2.Thus, can manufacture the flow sensor FS1 in present embodiment 1.
In addition, in resin-encapsulated operation (injection moulding operation) in present embodiment 1, the mold UM and the bed die BM that use 80 DEG C of above high-temperatures, therefore, heat is passed to from heated mold UM and bed die BM the resin M R that is injected into second space at short notice.Its result, according to the manufacture method of the flow sensor FS1 in present embodiment 1, can shorten the heat hardening time of resin M R.
For example, illustrated in the column of technical matters solving as wanted in invention, in the case of only implementing to utilize gold thread (metal wire) that potting resin carries out fixing, potting resin does not carry out the promotion of the sclerosis causing based on heating, so, time till potting resin sclerosis is elongated, and the problem that the throughput rate in the manufacturing process of flow sensor reduces becomes remarkable.
To this, in the resin-encapsulated operation in present embodiment 1, as mentioned above, because use heated mold UM and bed die BM, therefore, can transmit heat from heated mold UM and bed die BM to resin M R at short notice, can shorten the heat hardening time of resin M R.As a result, according to present embodiment 1, can improve the throughput rate in the manufacturing process of flow sensor FS1.
In present embodiment 1, for example, as shown in figure 11, in the time clipping with mold UM and bed die BM the lead frame LF that is equipped with semi-conductor chip CHP1, the example that is provided with framework FB and elastomer thin film LAF to being equipped with between the lead frame LF of semi-conductor chip CHP1 and mold UM is illustrated.Wherein, the technological thought in present embodiment 1 is not limited to this, for example, as shown in figure 13, also can be configured to, and does not use elastomer thin film LAF, and framework FB is only set, by mold UM by being pressed in the lead frame LF that is equipped with semi-conductor chip CHP1.
Even in this case, also be configured to the elasticity coefficient that makes the elasticity coefficient of framework FB be less than semi-conductor chip CHP1, thus, even in the case of the actual installation deviation of parts exists, also can utilize the distortion of the thickness direction (Z direction) of the framework FB little with semi-conductor chip CHP1 resilience in comparison coefficient, relax the folder power that puts on semi-conductor chip CHP1.Its result, according to present embodiment 1, can prevent the breakage that the isolating of semi-conductor chip CHP1, breach or crackle etc. are representative.
The serviceability > of < framework
Then, further state in detail the serviceability of the framework FB adopting in the flow sensor FS1 in present embodiment 1.
(1) Figure 14 represents not use framework FB to carry out the figure of an example of the correlation technique of resin-encapsulated.As shown in figure 14, in correlation technique, be not configured to flow testing division FDU is carried out to resin-encapsulated, therefore, be provided with the sealing SL that is shape for lugs at mold UM.And flow testing division FDU is surrounded by the SL of sealing portion (encapsulation part), therefore, can form the first space S P1 (confined space) in the mode of surrounding flow testing division FDU.In other words,, in correlation technique, surround flow testing division FDU by the sealing SL that is arranged on mold UM, thus not by flow testing division FDU resin-encapsulated.
In as the correlation technique forming with upper type, the sealing SL that need to be especially shape for lugs to arranging at mold UM design (, making an effort).,, in order to manufacture the flow sensor that flow testing division FDU is exposed, need to prepare the special mould UM of specialization in the manufacture of flow sensor.Therefore, need to prepare to have the special mold UM of sealing SL.
To this, in present embodiment 1, for example, as shown in figure 13, on semi-conductor chip CHP1, configure framework FB, press mold UM in the mode of being close to this framework FB.Now, in present embodiment 1, the in the situation that of disposing framework FB on semi-conductor chip CHP1, can obtain the height of framework FB higher than the formation of the height of flow testing division FDU.,, by making the height of framework FB higher than the height of flow testing division FDU, must guarantee to surround the first space S P1 (confined space) of flow testing division FDU and near zone thereof.Therefore, according to present embodiment 1, can make flow testing division FDU and near zone thereof expose, and will form the surf zone encapsulation of region as the semi-conductor chip CHP1 of representative taking pad.
In other words, in present embodiment 1, in the mode of built-in (comprising) flow testing division FDU in the peristome OP (FB) that is arranged at framework FB, framework FB is configured in to semi-conductor chip CHP1 upper, and makes the height of framework FB higher than the height of flow testing division FDU.As a result, under the surface of mold UM that is positioned at hole is smooth state, must guarantee to surround the first space S P1 (confined space) of flow testing division FDU.That is, according to present embodiment 1, for example, do not need to arrange at mold UM the special design of sealing SL as correlation technique, just can guarantee to surround the first space S P1 (confined space) of flow testing division FDU.
This means and adopt present embodiment 1, do not need to use the mold UM of special structure, can use the general mold UM (general part) that carries out resin-encapsulated for the entirety in hole, mean and can be used as the general mold UM of general part to manufacture the flow sensor FS1 that flow testing division FDU is exposed.Therefore, according to present embodiment 1, do not need to have prepared the special mold UM of flow sensor of special time (having carried out special design), can pass through the mold UM of normally used universal architecture widely, manufacture the flow sensor that flow testing division FDU is exposed.
(2) then, in the correlation technique shown in Figure 14, semi-conductor chip CHP1 contacts with the sealing SL that is formed directly into mold UM.Therefore, folder power is delivered to semi-conductor chip CHP1 by the sealing SL from being formed on mold UM.
At this, for example, in the thickness of each semi-conductor chip CHP1, there is dimensional discrepancy, therefore, in the case of the average thickness of the Thickness Ratio of semi-conductor chip CHP1 is thick, in the time clipping with mold UM and bed die BM the lead frame LF that is equipped with semi-conductor chip CHP1, the folder power that puts on semi-conductor chip CHP1 from sealing SL becomes large, and semi-conductor chip CHP1 breaks sometimes.
To this, in present embodiment 1, do not make mold UM and direct semiconductor chip CHP1 butt, make framework FB between mold UM and semi-conductor chip CHP1.And, in present embodiment 1, use the elasticity coefficient material less than semi-conductor chip CHP1 of framework FB.Therefore, framework FB is softer than semi-conductor chip CHP1, and therefore, in the situation that mold UM is pressed into framework FB, the size of the thickness direction of framework FB changes, to make to absorb the thickness deviation of semi-conductor chip CHP1.Thus, even if the average thickness of the Thickness Ratio of semi-conductor chip CHP1 is thick, also can prevent from, more than needs, semi-conductor chip CHP1 is applied to folder power.As a result, according to present embodiment 1, can prevent breaking of semi-conductor chip CHP1.
(3) and, in the correlation technique shown in Figure 14, be formed on the sealing SL of mold UM and the contact area of semi-conductor chip CHP1 is little.Therefore, concentrated on the contact area of sealing SL and semi-conductor chip CHP1 by the folder power of pressing from mold UM.Therefore, the pressure that is applied to the contact portion of sealing SL and semi-conductor chip CHP1 becomes large, and thus, semi-conductor chip CHP1 becomes easy breakage.Particularly, in the correlation technique shown in Figure 14, the contact area of sealing SL and semi-conductor chip CHP1 is formed on the region with barrier film DF planes overlapping.This means the contact area that has sealing SL and semi-conductor chip CHP1 in the region of the thin thickness of semi-conductor chip CHP1.Easily isolate in the region of the thin thickness of semi-conductor chip CHP1, so, in the correlation technique shown in Figure 14, the little pressure concentration causing of the contact area of sealing SL and semi-conductor chip CHP1 and contact area is configured in the time overlooking and the area coincidence of the thin thickness of semi-conductor chip CHP1 causes, semi-conductor chip CHP1 is easily damaged.
To this, in present embodiment 1, for example, as shown in figure 13, it is large that framework FB becomes compared with the correlation technique shown in Figure 14 with the contact area of semi-conductor chip CHP1.Therefore, put on the folder power of framework FB from mold UM, because the contact area of framework FB and semi-conductor chip CHP1 is compared with being dispersed greatly.Therefore, according to present embodiment 1, the concentration of local that puts on the folder power of semi-conductor chip CHP1 via framework FB from mold UM can be relaxed, thus, the breakage of semi-conductor chip CHP1 can be suppressed.And for example, as shown in figure 13, the contact area of framework FB and semi-conductor chip CHP1 does not overlap with barrier film DF in the time overlooking., in present embodiment 1, the contact area of framework FB and semi-conductor chip CHP1 is not formed on the region of the thin thickness of the semi-conductor chip CHP1 that is formed with barrier film DF, and is formed on the thick region of thickness of other semi-conductor chip CHP1.According to above situation, according to present embodiment 1, the folder power of utilizing the increase of the contact area of framework FB and semi-conductor chip CHP1 to cause is dispersed this point and contact area and is formed on the cooperative effect of this point of region that the thickness of semi-conductor chip CHP1 is thick, can effectively suppress the breakage of semi-conductor chip CHP1.
(4) in addition, as described above, in the correlation technique shown in Figure 14, the contact area of sealing SL and semi-conductor chip CHP1 is less, uprises so the resin being injected into is released into the danger of the first space S P1 (confined space) that surrounds flow testing division FDU.
To this, in present embodiment 1, it is large that the contact area of framework FB and semi-conductor chip CHP1 becomes, so can reduce the danger that flows into the first space S P1 (confined space) that surrounds flow testing division FDU.
As mentioned above, according to present embodiment 1, by using height to be less than the framework FB of the elasticity coefficient of semi-conductor chip CHP1 higher than the height of flow testing division FDU and elasticity coefficient, can obtain the serviceability shown in above-mentioned (1)～(4).
< variation 1 >
Then, the variation 1 of the flow sensor FS1 in above-mentioned embodiment 1 is described.In above-mentioned embodiment 1, for example, as shown in Figure 4, example framework FB to the WP of wall portion is illustrated, but in this variation 1, the example that the WP of wall portion is not set at framework FB is described.
Figure 15 (a) is the planimetric map that represents the flow sensor FS1 in this variation 1.In addition, Figure 15 (b) is the sectional view cutting off with A-A line of Figure 15 (a), and Figure 15 (c) is the sectional view cutting off with B-B line of Figure 15 (a).
As shown in Figure 15 (b) and Figure 15 (c), be not formed with wall portion at the framework FB being configured on semi-conductor chip CHP1.Even be not formed with the framework FB of wall portion as aforesaid way in the case of using, in the time that the height of framework FB is less than the elasticity coefficient of semi-conductor chip CHP1 higher than the height of flow testing division FDU and the elasticity coefficient of framework FB, can obtain the effect identical with above-mentioned embodiment 1.
Wherein, in framework FB in this variation 1, be difficult to realize the raising of the positioning precision of being undertaken by wall portion, so from the viewpoint of fixed frame FB reliably on semi-conductor chip CHP1, preferably the framework FB in this variation 1 and semi-conductor chip CHP1 are bonding.Now, the bonding jointing material that for example can use of framework FB and semi-conductor chip CHP1, also can utilize the material with adhesive effect to form framework FB.
In addition, for example, the physical dimension that is greater than semi-conductor chip CHP1 in the physical dimension of framework FB, depart from because of the resin pressure in resin-encapsulated operation (injection moulding operation) position of framework FB sometimes.So preference is less than the physical dimension of semi-conductor chip CHP1 as the physical dimension of framework FB.In other words, preferably framework FB be formed as built-in in the time overlooking (comprising) in semi-conductor chip CHP1 (by semi-conductor chip CHP1 around/comprise).And then in other words, the physical dimension of framework FB can be less than the physical dimension on the projecting plane above of semi-conductor chip CHP1.By forming as aforesaid way, can suppress the position deviation of the framework FB that the resin pressure in resin-encapsulated operation causes.
Figure 16 is the figure that represents a cross section of the flow sensor in this variation 1.Known as shown in figure 16, framework FB built-in (comprising) in semi-conductor chip CHP1 (by semi-conductor chip CHP1 around/comprise).Particularly, in Figure 16, be that the width of L1, framework is L2 in the case of making the width of semi-conductor chip CHP1, in the case of setting up during the pass of L1 > L2 ties up to all interfaces, framework FB can built-in (comprising) in semi-conductor chip CHP1 (by semi-conductor chip CHP1 around/comprise).
< variation 2 >
Then, the variation 2 of the flow sensor FS1 in above-mentioned embodiment 1 is described.In above-mentioned embodiment 1, for example, as shown in Fig. 5 (b), Fig. 5 (c), the example of the upper configuration of the semi-conductor chip CHP1 carrying via jointing material (adhesive) ADH1 on the TAB1 of chip carrying portion framework FB is illustrated.In this variation 2, the example that is inserted with plate-like structure PLT between semi-conductor chip CHP1 and lead frame LF is described.
Figure 17 is the planimetric map that represents the structure of the flow sensor before resin-encapsulated in this variation 2.Figure 18 is the sectional view cutting off with A-A line of Figure 17, and Figure 19 is the sectional view cutting off with B-B line of Figure 17.
Known as shown in figure 17, the flow sensor FS1 in this variation 2, spreads all over the lower floor of semi-conductor chip CHP1 and the lower floor of semi-conductor chip CHP2 and forms plate-like structure PLT.Such as rectangular shaped of this plate-like structure PLT, have in the time overlooking and comprise (around) physical dimension of semi-conductor chip CHP1 and semi-conductor chip CHP2.
Particularly, as shown in Figure 18, Figure 19, on the lead frame LF that comprises the TAB1 of chip carrying portion and the TAB2 of chip carrying portion, configure plate-like structure PLT.This plate-like structure PLT for example use jointing material ADH3 and lead frame LF bonding, but also can to use paste material to carry out bonding.And this plate-like structure PLT is upper is equipped with semi-conductor chip CHP1 via jointing material ADH1, and, be equipped with semi-conductor chip CHP2 via jointing material ADH2.Now, in the situation that plate-like structure PLT is formed by metal material, also can be connected with semi-conductor chip CHP1 by metal wire W1, and, be connected with chip CHP2 by metal wire W2 semiconductor.In addition, lead frame LF upper can also mounting condenser except above-mentioned plate-like structure PLT, the parts of thermistor etc.
Above-mentioned plate-like structure PLT improves, plays a role from the padded coaming of outside impact mainly as the rigidity of flow sensor FS1.And, in the situation that plate-like structure PLT is made up of conductive material, be electrically connected with semi-conductor chip CHP1 (pad PD1), semi-conductor chip CHP2 (pad PD2), can be used in the supply of earthing potential (reference potential), also can be grounded the stabilization of current potential.
Plate-like structure PLT can be made up of the thermosetting resin of the thermoplastic resin of such as PBT resin, ABS fat, PC resin, nylon resin, PS resin, PP resin, fluororesin etc., epoxy resin, phenolics, urethane resin etc.In this case, plate-like structure PLT can not be subject to bring into play function from the padded coaming of the impact of external impact mainly as protection semi-conductor chip CHP1, semi-conductor chip CHP2.
On the other hand, plate-like structure PLT can form by the metal material of ferroalloy, aluminium alloy or aldary etc. is carried out to punch process, also can be formed by glass material.Particularly, in the situation that forming plate-like structure PLT by metal material, can improve the rigidity of flow sensor FS1.And, plate-like structure PLT is electrically connected with semi-conductor chip CHP1, semi-conductor chip CHP2, also can be by plate-like structure PLT for the supply of ground potential, the stabilization of ground potential.
In flow sensor FS1 in the variation 2 forming as aforesaid way, for example, as shown in Figure 17～Figure 19, also on semi-conductor chip CHP1, configure framework FB.And the inside of framework FB is formed with peristome OP (FB), the flow testing division FDU that is formed on semi-conductor chip CHP1 exposes from this peristome OP (FB).In this variation 2, the height by making framework FB is higher than the height of flow testing division FDU and make the elasticity coefficient of framework FB be less than semi-conductor chip CHP1, also can obtain the effect identical with above-mentioned embodiment 1.
(embodiment 2)
In above-mentioned embodiment 1, for example, as shown in Fig. 5 (b), the flow sensor FS1 that lists the double-chip structure with semi-conductor chip CHP1 and semi-conductor chip CHP2 is that example is illustrated, but technological thought of the present invention is not limited to this, for example, also can be applied to the flow sensor of the single chip architecture that comprises a semi-conductor chip that forms flow testing division and control part (control circuit).In present embodiment 2, enumerating the situation that technological thought of the present invention is applied to the flow sensor of single chip architecture is that example describes.
The actual installation of the flow sensor in < embodiment 2 forms >
Figure 20 is the figure that represents the actual installation formation of the flow sensor FS2 in present embodiment 2, is the figure representing by the formation before resin-encapsulated.Particularly, Figure 20 (a) is the planimetric map that represents the actual installation formation of the flow sensor FS2 in present embodiment 2.Figure 20 (b) is the sectional view cutting off with A-A line of Figure 20 (a), and Figure 20 (c) is the sectional view cutting off with B-B line of Figure 20 (a).In addition, Figure 20 (d) is the planimetric map that represents the back side of semi-conductor chip CHP1.
First,, as shown in Figure 20 (a), the flow sensor FS2 in present embodiment 2 has the lead frame LF being for example made up of copper product.This lead frame LF has the TAB1 of chip carrying portion in the inside being surrounded by the sealing strip DM that forms outer frame body.And, on the TAB1 of chip carrying portion, be equipped with semi-conductor chip CHP1.
Semi-conductor chip CHP1 rectangular in shape, is formed with flow testing division FDU in substantial middle portion.And it is upper that the distribution WL1A being connected with flow testing division FDU is formed on semi-conductor chip CHP1, this distribution WL1A is connected with the control part CU that is formed on semi-conductor chip CHP1.This control part CU is formed with by the semiconductor element of MISFET (Metal Insulator Semiconductor Field Effect Transistor) etc., the integrated circuit that distribution forms.Particularly, be formed with the CPU1 shown in pie graph 1, input circuit 2, output circuit 3 or, the integrated circuit of storer 4 etc.And control part CU is connected with the multiple pad PD1, the pad PD2 that form along the long limit of semi-conductor chip CHP1 by distribution WL1B.In other words, flow testing division FDU is connected by distribution WL1A with control part CU, and control part CU is connected with pad PD1, pad PD2 by distribution WL1B.Pad PD1 is connected with the lead-in wire LD1 that is formed on lead frame LF via the metal wire W1 for example being formed by gold thread.On the other hand, pad PD2 is connected with the lead-in wire LD2 that is formed on lead frame LF via the metal wire W2 for example being formed by gold thread.In addition, can be upper in the outmost surface of semi-conductor chip CHP1 (element forming surface), to be formed with polyimide film with stress buffer function, surface protecting function or the insulation protection function etc. of binder resin as object.
Lead-in wire LD1 and lead-in wire LD2 with the orthogonal directions X of the mobile Y-direction of gas on the mode of extending configure, there is the function of the input and output of carrying out external circuit.On the other hand, be formed with outstanding lead-in wire PLD along the Y-direction of lead frame LF.This outstanding lead-in wire PLD is connected with the TAB1 of chip carrying portion, but is not connected with the pad PD1, the PD2 that are formed on semi-conductor chip CHP1., outstanding lead-in wire PLD is different from the lead-in wire LD1 as above-mentioned input and output terminal performance function, the LD2 that goes between.
At this, in present embodiment 2, on the TAB1 of chip carrying portion, be equipped with semi-conductor chip CHP1 with the long limit of semi-conductor chip CHP1 of rectangular in shape and the parallel mode of the flow direction of gas (direction of arrow, Y-direction).And long side direction disposes multiple pad PD1, PD2 at the long edge of semi-conductor chip CHP1.These multiple pad PD1 are connected with the multiple metal wire W1 that configure by the mode on the long limit with across semi-conductor chip CHP1 separately of multiple lead-in wire LD1 separately.Equally, being connected with the multiple metal wire W2 that configure by the mode on the long limit with across semi-conductor chip CHP1 separately of multiple lead-in wire LD2 separately of multiple pad PD2.Like this, long limit along the semi-conductor chip CHP1 of rectangular shape configures multiple pad PD1, PD2, so, compared with configuring the situation of multiple pad PD1, PD2 on short side direction at semi-conductor chip CHP1, can make more pad PD1, PD2 be formed on semi-conductor chip CHP1.Particularly, in present embodiment 2, the semi-conductor chip CHP1 not only CU of formation control portion is also formed with flow testing division FDU in the lump, so, by multiple pad PD1, PD2 are arranged on long side direction, can effectively utilize the region on semi-conductor chip CHP1.
And, in present embodiment 2, in a part of semi-conductor chip CHP1, be formed with framework FB.Such as rectangular shaped of this framework FB, forms peristome OP (FB) in inside.The flow testing division FDU that this framework FB is configured to be formed on the interarea of semi-conductor chip CHP1 exposes from peristome OP (FB), and the multiple pad PD1 that are configured to be formed on semi-conductor chip CHP1 expose to the outside of framework FB.
Then, as shown in Figure 20 (b), be formed with the TAB1 of chip carrying portion at lead frame LF, on the TAB1 of this chip carrying portion, be equipped with semi-conductor chip CHP1.This semi-conductor chip CHP1 is bonding by jointing material ADH1 and the TAB1 of chip carrying portion.The back side of semi-conductor chip CHP1 is formed with barrier film DF (thin plate part), is formed with flow testing division FDU on the surface of the semi-conductor chip CHP1 relative with barrier film DF.On the other hand, the bottom that is present in the TAB1 of chip carrying portion of the below of barrier film DF is formed with peristome OP1.
And, as shown in Figure 20 (b), the surface of semi-conductor chip CHP1 (above), except flow testing division FDU, also be formed with pad PD1, pad PD2, this pad PD1 is connected with the lead-in wire LD1 that is formed on lead frame LF via metal wire W1.Equally, pad PD2 is connected with the lead-in wire LD2 that is formed on lead frame LF via metal wire W2.And, on semi-conductor chip CHP1, dispose framework FB.This framework FB is formed with peristome OP (FB), and flow testing division FDU exposes from this peristome OP (FB).
In addition, as shown in Figure 20 (c), lead frame LF is formed with the TAB1 of chip carrying portion and outstanding lead-in wire PLD, and the TAB1 of chip carrying portion and outstanding lead-in wire PLD form as one.Bonding by jointing material ADH1 and semi-conductor chip CHP1 on the TAB1 of this chip carrying portion.Be formed with barrier film DF (thin plate part) at the back side of semi-conductor chip CHP1, be formed with flow testing division FDU on the surface of the semi-conductor chip CHP1 relative with barrier film DF.On the other hand, be present in barrier film DF below the bottom of the TAB1 of chip carrying portion be formed with peristome OP1.In addition, on the surface of semi-conductor chip CHP1 to be formed with control part CU with flow testing division FDU mode arranged side by side.Similarly, on semi-conductor chip CHP1, configure framework FB.This framework FB is formed with peristome OP (FB), and flow testing division FDU exposes from this peristome OP (FB).
The jointing material ADH1 of bonding semi-conductor chip CHP1 and the TAB1 of chip carrying portion can use the thermoplastic resin of thermosetting resin, polyimide resin, acryl resin of such as epoxy resin, urethane resin etc. etc.
For example, the bonding of semi-conductor chip CHP1 and the TAB1 of chip carrying portion can the mode as shown in Figure 20 (d) be undertaken by coating jointing material ADH1.Figure 20 (d) is the planimetric map that represents the back side of semi-conductor chip CHP1.As shown in Figure 20 (d), be formed with barrier film DF at the back side of semi-conductor chip CHP1, apply jointing material ADH1 in the mode of surrounding this barrier film DF.In addition, in Figure 20 (c), represent barrier film DF to be surrounded to the example that applies jointing material ADH1 as the mode of quadrangle form, but be not limited to this, for example, the mode that also can surround barrier film DF with the shape arbitrarily with elliptical shape etc. applies jointing material ADH1.
In flow sensor FS2 in present embodiment 2, the actual installation of the flow sensor FS2 before encapsulating with resin forms as described above and forms, below, the actual installation of the flow sensor FS2 with after resin-encapsulated is formed and described.
Figure 21 is the figure that represents the actual installation formation of the flow sensor FS2 in present embodiment 2, is the figure representing by the formation after resin-encapsulated.Particularly, Figure 21 (a) is the planimetric map that represents the actual installation formation of the flow sensor FS2 in present embodiment 2.Figure 21 (b) is the sectional view cutting off with A-A line of Figure 21 (a), and Figure 21 (c) is the sectional view cutting off with B-B line of Figure 21 (a).
In flow sensor FS2 in present embodiment 2, as shown in Figure 21 (a), from the state that is formed on the peristome OP (FB) of framework FB and exposes, form the structure that a part of semi-conductor chip CHP1 is covered by resin M R at the flow testing division FDU that is formed on semi-conductor chip CHP1.That is, in present embodiment 2, the region of the semi-conductor chip CHP1 the region of unifying to encapsulate the region except being formed with flow testing division FDU and be equipped with framework FB with resin M R.
The encapsulation that utilizes this resin M R to carry out, can will under state fixing the semi-conductor chip CHP1 that be formed with flow testing division FDU, carry out with mould, so, the position deviation of semi-conductor chip CHP1 can be suppressed, and, can utilize a part of resin M R packaged semiconductor CHP1.This means, according to the flow sensor FS2 in present embodiment 2, can suppress the position deviation of each flow sensor FS2, and, can utilize a part of resin M R packaged semiconductor CHP1, mean the deviation of the position that can suppress the flow testing division FDU that is formed on semi-conductor chip CHP1.
Result, according to present embodiment 2, can make the position of flow testing division FDU of the flow that detects gas consistent in each flow sensor FS1, therefore, can obtain the significant effect that can be suppressed at the performance generation deviation that detects gas flow in each flow sensor FS2.
Then, in flow sensor FS1 in present embodiment 2, as shown in Figure 21 (a), the height of framework FB in the both sides of the flow testing division FDU that encirclement is exposed or the height of resin M R (packaging body) are higher than the surperficial height of the semi-conductor chip CHP1 that comprises flow testing division FDU., around the flow testing division FDU exposing is surrounded by framework FB, and the height of the framework FB of encirclement flow testing division FDU is higher than the height of flow testing division FDU.Adopt as present embodiment 2 that aforesaid way forms, parts collide the flow testing division FDU exposing when installation that can peventing member is assembled etc., so, can prevent the breakage of the semi-conductor chip CHP1 that is formed with flow testing division FDU.In other words, the height of the framework FB of encirclement flow testing division FDU is higher than the height of the flow testing division FDU exposing.Therefore, in the time that parts come in contact, first, contact with highly high framework FB, so, can prevent the highly low semi-conductor chip CHP1 that comprises flow testing division FDU expose that face (XY face) contacts with parts, semi-conductor chip CHP1 occurs damaged.
Particularly, in present embodiment 2, configure framework FB in a part of semi-conductor chip CHP1, the elasticity coefficient of this framework FB is less than the elasticity coefficient of semi-conductor chip CHP1.In other words, framework FB is made up of the little material of hardness of hardness ratio semi-conductor chip CHP1.Therefore,, in the situation that parts contact with framework FB, can utilize the distortion impact-absorbing of the smaller framework FB of hardness, therefore, can suppress to impact being passed to the semi-conductor chip CHP1 being configured under framework FB, thus, can effectively prevent the breakage of semi-conductor chip CHP1.
In addition, in present embodiment 2, in order to prevent that resin M R from invading the inner space of barrier film DF, the mode that prerequisite is for example to obtain the barrier film DF to surround the back side that is formed on semi-conductor chip CHP1 applies the formation of jointing material ADH1.And, as shown in Figure 21 (b) and Figure 21 (c), the bottom that is formed on the TAB1 of chip carrying portion of the below that is positioned at barrier film DF at the back side of semi-conductor chip CHP1 is formed with peristome OP1, and, at the resin M R at the back side that covers the TAB1 of chip carrying portion, peristome OP2 is set.
Thus, in the time adopting the flow sensor FS2 of present embodiment 2, the inner space of barrier film DF is communicated with the space outerpace of flow sensor FS1 with the peristome OP2 that is formed on resin M R via the peristome OP1 of the bottom that is formed on the TAB1 of chip carrying portion.As a result, can make the pressure of inner space of barrier film DF and the pressure of the space outerpace of flow sensor FS2 equate, can suppress stress and put on barrier film DF.
As with upper type, the flow sensor FS2 in present embodiment 2 is formed by actual installation, but in actual flow sensor FS2, with after resin M R encapsulation, the sealing strip DM of the outer frame body that forms lead frame LF is removed.Figure 22 is the planimetric map that has represented to remove the actual installation formation of the flow sensor FS2 after sealing strip DM.Known as shown in figure 22, by cutting off sealing strip DM, multiple electric signal can be taken out independently from multiple lead-in wire LD1 and lead-in wire LD2.
The manufacture method > of the flow sensor in < present embodiment 2
Flow sensor FS2 in present embodiment 2 forms as aforesaid way, below, with reference to Figure 23～Figure 26, its manufacture method is described.Figure 23～Figure 26 represents the manufacturing process in the cross section cutting off with B-B line in Figure 21 (a).
First, as shown in figure 23, Preparation Example is as the lead frame LF being formed by copper product.This lead frame LF has formed the TAB1 of chip carrying portion, outstanding lead-in wire PLD, and the bottom of the TAB1 of chip carrying portion is formed with peristome OP1.
Then, as shown in figure 24, on the TAB1 of chip carrying portion, carry semi-conductor chip CHP1.Particularly, with jointing material ADH1, semi-conductor chip CHP1 is connected on the TAB1 of chip carrying portion that is formed on lead frame LF.Now, it is upper that semi-conductor chip CHP1 is mounted in the TAB1 of chip carrying portion, and the barrier film DF that is formed on semi-conductor chip CHP1 is communicated with the peristome OP1 of the bottom that is formed on the TAB1 of chip carrying portion.In addition, form flow testing division FDU, control part CU, distribution (not shown) and pad (not shown) at semi-conductor chip CHP1 by common semiconductor fabrication process.And, for example, by anisotropic etching, form barrier film DF in the position at the back side relative with the surperficial flow testing division FDU that is formed on semi-conductor chip CHP1.
Then, connect with metal wire (not shown) lead-in wire (not shown) that (metal wire is bonding) is formed on the pad (not shown) of semi-conductor chip CHP1 and is formed on lead frame LF.Metal wire (not shown) is for example formed by gold thread.
Afterwards, on semi-conductor chip CHP1, carry framework FB.Particularly, framework FB carries into has the flow testing division FDU that is formed on semi-conductor chip CHP1 being formed on built-in (comprising) in inner peristome OP (FB), and disposes the control part CU that is formed on semi-conductor chip CHP1 in the outside of framework FB.Thus, can make flow testing division FDU and control part CU expose, and framework FB is mounted on semi-conductor chip CHP1.
Then, as shown in figure 25, clip the lead frame LF of the semi-conductor chip CHP1 that is equipped with lift-launch framework FB across elastomer thin film LAF and formation second space with mold UM and bed die BM (hole), then, the in the situation that of heating, make resin M R flow into this second space, encapsulate surface, the metal wire (not shown) of the semi-conductor chip CHP1 in the near zone that is formed with control part CU, a part of giving prominence to the PLD that goes between with resin M R.
In the manufacture method of flow sensor FS2 in this present embodiment 2, for example, as shown in figure 25, make mold UM abut to height higher than the framework FB of height of flow testing division FDU that is formed on semi-conductor chip CHP1 across elastomer thin film LAF, and, clip the lead frame LF that is equipped with semi-conductor chip CHP1 with bed die BM and mold UM.
Thus, according to present embodiment 2, guarantee to be formed on the flow testing division FDU of semi-conductor chip CHP1 and the first space S P1 (confined space) that near zone surrounds thereof, and, can encapsulate (sealing) and for example form the surf zone of region as the semi-conductor chip CHP1 of representative taking control part.In other words, according to present embodiment 2, can make the flow testing division FDU and the near zone thereof that are formed on semi-conductor chip CHP1 expose, and encapsulation form the surf zone of region as the semi-conductor chip CHP1 of representative taking control part.
And, in the manufacture method of flow sensor FS2 in present embodiment 2, in the time clipping with mold UM and bed die BM the lead frame LF that is equipped with semi-conductor chip CHP1, make framework FB and elastomer thin film LAF between be equipped with the lead frame LF of semi-conductor chip CHP1 and mold UM and between.
Thus, even if in the case of the actual installation deviation of parts exists, also can be by the distortion of the thickness direction of the elasticity coefficient framework FB less than semi-conductor chip CHP1 (Z direction), relax the folder power that puts on semi-conductor chip CHP1.As a result, according to present embodiment 2, can prevent the breakage that the isolating of semi-conductor chip CHP1, breach or crackle etc. are representative.
Then, as shown in figure 26, in the stage of resin M R sclerosis, take out from mold UM and bed die BM the lead frame LF that is equipped with semi-conductor chip CHP1.Thus, can manufacture the flow sensor FS2 in present embodiment 1.In flow sensor FS2 in the present embodiment 2 of manufacturing as aforesaid way, can obtain the effect identical with above-mentioned embodiment 1.
Above, the invention inventor being proposed based on this embodiment is illustrated particularly, but the invention is not restricted to above-mentioned embodiment, in the scope that does not depart from its purport, can carry out various changes, and this is self-evident.
In addition the flow sensor illustrating in above-mentioned embodiment, also can be formed with flow testing division FDU semi-conductor chip CHP1 surface (above) a part form the film of silicon oxide film taking polyimide film, silicon nitride film, polysilicon film, TEOS (Si (OC2H5) 4) as raw material etc.Thus, in a surperficial part of the semi-conductor chip CHP1 being close to resin, can realize the raising of bond strength.
Polyimide film can be for example by semi-conductor chip CHP1, coating forms, implement as required photoetching technique and etching technique and carry out patterning.Silicon nitride film, polysilicon film, silicon oxide film can utilize taking plasma CVD method, decompression CVD method, atmospheric pressure cvd method etc. as chemical vapor deposition method, chemical vapor coating (deposition) method, chemical vapor deposition method, physical vapor flop-in method or the physical vapor deposition of representative and form.
Be formed on these films on semi-conductor chip CHP1, can prevent that the thickness that is formed on the silicon oxide film on the silicon (Si) that forms semi-conductor chip CHP1 from increasing, and can improve the cohesive of resin M R and semi-conductor chip CHP1.
These film film forming are at least a portion of the semi-conductor chip CHP1 being covered by resin M R.
In addition, the thickness of silicon oxide film taking polyimide film, silicon nitride film, polysilicon film, TEOS as raw material etc. is set as about 1 μ m～about 120 μ m, but be not limited to this thickness, the region being covered by resin M R among the surf zone of semi-conductor chip CHP1 forms these films.
The flow sensor being illustrated is in the above-described embodiment the device of the flow of mensurated gas composition, but is not defined for concrete gaseous species, and it can be widely used in measuring air, LP gas, carbon dioxide (CO
2gas), the device of the flow of the gas arbitrarily of CFC gas (Freon gas) etc.
In addition, in the above-described embodiment, the flow sensor of the flow to mensurated gas composition is illustrated, but the thought of technology of the present invention is not limited to this, it can be widely used in carrying out in the semiconductor device of resin-encapsulated under the state that the part of semiconductor element of humidity sensor etc. is exposed.
Industrial utilizability
The present invention can be used in the manufacturing industry of the semiconductor device of for example manufacturing flow sensor etc. widely.
Description of reference numerals
1?CPU
2 input circuits
3 output circuits
4 storeies
ADH1 jointing material (adhesive)
ADH2 jointing material (adhesive)
ADH3 jointing material (adhesive)
BM bed die
BR1 downstream temperature detecting resistance body
BR2 downstream temperature detecting resistance body
CHP1 semi-conductor chip
CHP2 semi-conductor chip
CU control part
DF barrier film
DM sealing strip
FB framework
FDU flow testing division
FP frame portion
FS1 flow sensor
FS2 flow sensor
HCB adds heat control bridge
HR heating resistor
IP1 puts into part (insert die, insertion mould, insert die)
LAF elastomer thin film
LD1 lead-in wire
LD2 lead-in wire
LF lead frame
MR resin
OP1 peristome
OP2 peristome
OP (FB) peristome
PD1 pad (pad)
PD2 pad
PD3 pad
The outstanding lead-in wire of PLD
PLT plate-like structure
PS power supply
Q gas flow
R1 resistive element
R2 resistive element
R3 resistive element
R4 resistive element
SL sealing
SP1 the first space
TAB1 chip carrying portion
TAB2 chip carrying portion
Tr transistor
TSB temperature sensor bridge
UM mold
UR1 upstream temperature detecting resistance body
UR2 upstream temperature detecting resistance body
Vref1 reference voltage
Vref2 reference voltage
W1 metal wire
W2 metal wire
W3 metal wire
WL1 distribution
WL1A distribution
WL1B distribution
WP wall portion
Claims (17)
1. a flow sensor, is characterized in that, possesses:
(a) the first chip carrying portion; With
(b) be configured in the first semi-conductor chip in described the first chip carrying portion,
Described the first semi-conductor chip has:
(b1) be formed on the flow testing division on the interarea of the first Semiconductor substrate; With
(b2) at the barrier film with forming in the back side described interarea opposition side, in the region relative with described flow testing division described the first Semiconductor substrate,
This flow sensor contains framework, and this framework is mounted on described the first semi-conductor chip and has the peristome that at least exposes described flow testing division, and this framework is formed by the elasticity coefficient material less than the elasticity coefficient of described the first semi-conductor chip,
The state exposing from the described peristome of described framework at the described flow testing division being formed on described the first semi-conductor chip, the packaging body that a part for described the first semi-conductor chip is contained resin is packaged.
2. flow sensor as claimed in claim 1, is characterized in that:
Described the first semi-conductor chip also has the control circuit portion that controls described flow testing division.
3. flow sensor as claimed in claim 1, is characterized in that, also possesses:
(c) the second chip carrying portion; With
(d) be configured in the second semi-conductor chip in described the second chip carrying portion,
Described the second semi-conductor chip has the control circuit portion on the interarea that is formed on the second Semiconductor substrate, and described control circuit portion controls described flow testing division,
Described the second semi-conductor chip is packaged by described packaging body.
4. flow sensor as claimed in claim 1, is characterized in that:
Described framework and described first semi-conductor chip with described peristome are bonding.
5. flow sensor as claimed in claim 1, is characterized in that:
Described framework and described first semi-conductor chip with described peristome are not bonding.
6. flow sensor as claimed in claim 1, is characterized in that:
The described framework with described peristome has the wall portion with at least one parallel sided of described the first semi-conductor chip.
7. flow sensor as claimed in claim 1, is characterized in that:
In the time overlooking, the described framework with described peristome is contained in the described interarea of described the first semi-conductor chip.
8. flow sensor as claimed in claim 1, is characterized in that:
At least a portion at the described interarea of described the first semi-conductor chip is formed with polyimide film, silicon nitride film, polysilicon film or silicon oxide film.
9. flow sensor as claimed in claim 1, is characterized in that:
In the arbitrary section that contains the described flow testing division exposing, the height of described framework or described packaging body is higher than the height of the described interarea of described the first semi-conductor chip that contains described flow testing division.
10. flow sensor as claimed in claim 1, is characterized in that:
The frame portion and the described barrier film that form described framework are configured in the time overlooking not overlapping.
11. flow sensors as claimed in claim 1, is characterized in that:
Between described the first chip carrying portion and described the first semi-conductor chip, be inserted with plate-like structure.
12. 1 kinds of flow sensors, is characterized in that possessing:
(a) the first chip carrying portion; With
(b) be configured in the first semi-conductor chip in described the first chip carrying portion,
Described the first semi-conductor chip has:
(b1) be formed on the flow testing division on the interarea of the first Semiconductor substrate; With
(b2) at the barrier film with forming in the back side described interarea opposition side, in the region relative with described flow testing division described the first Semiconductor substrate,
This flow sensor contains framework, this framework is mounted on described the first semi-conductor chip and has the peristome that at least exposes described flow testing division, this framework is in the situation that being mounted on described the first semi-conductor chip, and its height is higher than the height of described flow testing division
The state exposing from the described peristome of described framework at the described flow testing division being formed on described the first semi-conductor chip, the packaging body that a part for described the first semi-conductor chip is contained resin is packaged.
The manufacture method of 13. 1 kinds of flow sensors, wherein,
Described flow sensor possesses:
The first chip carrying portion; With
Be configured in the first semi-conductor chip in described the first chip carrying portion,
Described the first semi-conductor chip has:
Be formed on the flow testing division on the interarea of the first Semiconductor substrate; With
At the barrier film with forming in the back side described interarea opposition side, in the region relative with described flow testing division described the first Semiconductor substrate,
Described flow sensor contains framework, this framework is mounted on described the first semi-conductor chip and has the peristome that at least exposes described flow testing division, this framework is formed by the elasticity coefficient material less than the elasticity coefficient of described the first semi-conductor chip, and this framework is in the time being mounted on described the first semi-conductor chip, its height is higher than the height of described flow testing division
The state exposing from the described peristome of described framework at the described flow testing division being formed on described the first semi-conductor chip, the packaging body that a part for described the first semi-conductor chip is contained resin is packaged,
The manufacture method of described flow sensor is characterised in that, comprising:
(a) preparation has the operation of the base material of described the first chip carrying portion;
(b) prepare the operation of described the first semi-conductor chip;
(c) operation of carrying described the first semi-conductor chip in described the first chip carrying portion;
(d), after described (c) operation, so that described flow testing division is contained in the mode of the described peristome that is formed on described framework, on described the first semi-conductor chip, configure the operation of described framework; With
(e) after described (d) operation, the described flow testing division that is formed on described the first semi-conductor chip is exposed, and utilize described packaging body by the operation of the part encapsulation of described the first semi-conductor chip, wherein,
Described (e) operation comprises:
(e1) operation of preparation mold and bed die;
(e2) after described (e1) operation, be close to described framework by making the bottom surface of described mold, form the first space that surrounds described flow testing division, and utilize described mold and described bed die to clip the operation of the described base material that is equipped with described the first semi-conductor chip across second space; With
(e3) after described (e2) operation, make described resin flow into the operation of described second space.
The manufacture method of 14. flow sensors as claimed in claim 13, is characterized in that:
Described the first semi-conductor chip also has the control circuit portion that controls described flow testing division.
The manufacture method of 15. flow sensors as claimed in claim 13, is characterized in that, also comprises:
(f) prepare the operation of second semi-conductor chip with the control circuit portion that controls described flow testing division before described (c) operation,
The described base material of preparing in described (a) operation has the second chip carrying portion,
In described (c) operation, by described the second semiconductor-chip-mounting in described the second chip carrying portion,
In described (e) operation, utilize described packaging body to encapsulate described the second semi-conductor chip,
In described (e2) operation, be close to described framework by making the bottom surface of described mold, form the first space that surrounds described flow testing division, and utilize described mold and described bed die to clip the described base material that is equipped with described the first semi-conductor chip and described the second semi-conductor chip across described second space.
The manufacture method of 16. flow sensors as claimed in claim 13, is characterized in that:
Described framework has the wall portion with at least one parallel sided of described the first semi-conductor chip,
In described (d) operation, make described wall portion be close to the described side of described the first semi-conductor chip and described framework is configured on described the first semi-conductor chip.
The manufacture method of 17. flow sensors as claimed in claim 13, is characterized in that:
In described (e2) operation, make described mold be close to described framework across elastomer thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610390927.XA CN106092233B (en) | 2012-03-19 | 2012-12-04 | Flow sensor and its manufacturing method |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012062577A JP5763575B2 (en) | 2012-03-19 | 2012-03-19 | Flow sensor and manufacturing method thereof |
| JP2012-062577 | 2012-03-19 | ||
| PCT/JP2012/081340 WO2013140674A1 (en) | 2012-03-19 | 2012-12-04 | Flow sensor and method for manufacturing same |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610390927.XA Division CN106092233B (en) | 2012-03-19 | 2012-12-04 | Flow sensor and its manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104024807A true CN104024807A (en) | 2014-09-03 |
| CN104024807B CN104024807B (en) | 2016-07-06 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610390927.XA Expired - Fee Related CN106092233B (en) | 2012-03-19 | 2012-12-04 | Flow sensor and its manufacturing method |
| CN201280065517.8A Expired - Fee Related CN104024807B (en) | 2012-03-19 | 2012-12-04 | Flow transducer and manufacture method thereof |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610390927.XA Expired - Fee Related CN106092233B (en) | 2012-03-19 | 2012-12-04 | Flow sensor and its manufacturing method |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5763575B2 (en) |
| CN (2) | CN106092233B (en) |
| DE (1) | DE112012006049T5 (en) |
| WO (1) | WO2013140674A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112313481A (en) * | 2018-07-12 | 2021-02-02 | 日立汽车系统株式会社 | Flow sensor |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6018903B2 (en) | 2012-12-17 | 2016-11-02 | 日立オートモティブシステムズ株式会社 | Physical quantity sensor |
| JP5916637B2 (en) | 2013-01-11 | 2016-05-11 | 日立オートモティブシステムズ株式会社 | Flow sensor and manufacturing method thereof |
| US10444175B2 (en) | 2015-04-03 | 2019-10-15 | Denso Corporation | Measurement device |
| JP6507804B2 (en) * | 2015-04-03 | 2019-05-08 | 株式会社デンソー | Air flow measuring device |
| JP6553587B2 (en) * | 2016-12-20 | 2019-07-31 | Ｎｉｓｓｈａ株式会社 | Gas sensor module and method of manufacturing the same |
| WO2022208931A1 (en) * | 2021-03-29 | 2022-10-06 | 日立Astemo株式会社 | Flow rate measurement device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0469958A (en) * | 1990-07-10 | 1992-03-05 | Mitsubishi Electric Corp | Semiconductor device |
| JP2003161721A (en) * | 2001-11-26 | 2003-06-06 | Matsushita Electric Works Ltd | Semiconductor ion sensor and manufacturing method thereof |
| JP2009058230A (en) * | 2007-08-29 | 2009-03-19 | Denso Corp | Manufacturing method for sensor device, and the sensor device |
| JP2010197102A (en) * | 2009-02-23 | 2010-09-09 | Denso Corp | Sensor device and method of manufacturing the same |
| CN102162744A (en) * | 2009-12-11 | 2011-08-24 | 日立汽车系统株式会社 | Flow sensor, method for manufacturing flow sensor and flow sensor module |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1040577C (en) * | 1990-08-01 | 1998-11-04 | 涂相征 | Heat-flow sensor of integrated Si-membrane and making method thereof |
| EP1365216B1 (en) * | 2002-05-10 | 2018-01-17 | Azbil Corporation | Flow sensor and method of manufacturing the same |
| JP4609019B2 (en) * | 2004-09-24 | 2011-01-12 | 株式会社デンソー | Thermal flow sensor and manufacturing method thereof |
| JP4966526B2 (en) * | 2005-09-07 | 2012-07-04 | 日立オートモティブシステムズ株式会社 | Flow sensor |
| JP5315304B2 (en) * | 2010-07-30 | 2013-10-16 | 日立オートモティブシステムズ株式会社 | Thermal flow meter |
-
2012
- 2012-03-19 JP JP2012062577A patent/JP5763575B2/en not_active Expired - Fee Related
- 2012-12-04 DE DE112012006049.0T patent/DE112012006049T5/en not_active Withdrawn
- 2012-12-04 CN CN201610390927.XA patent/CN106092233B/en not_active Expired - Fee Related
- 2012-12-04 WO PCT/JP2012/081340 patent/WO2013140674A1/en active Application Filing
- 2012-12-04 CN CN201280065517.8A patent/CN104024807B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0469958A (en) * | 1990-07-10 | 1992-03-05 | Mitsubishi Electric Corp | Semiconductor device |
| JP2003161721A (en) * | 2001-11-26 | 2003-06-06 | Matsushita Electric Works Ltd | Semiconductor ion sensor and manufacturing method thereof |
| JP2009058230A (en) * | 2007-08-29 | 2009-03-19 | Denso Corp | Manufacturing method for sensor device, and the sensor device |
| JP2010197102A (en) * | 2009-02-23 | 2010-09-09 | Denso Corp | Sensor device and method of manufacturing the same |
| CN102162744A (en) * | 2009-12-11 | 2011-08-24 | 日立汽车系统株式会社 | Flow sensor, method for manufacturing flow sensor and flow sensor module |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112313481A (en) * | 2018-07-12 | 2021-02-02 | 日立汽车系统株式会社 | Flow sensor |
| CN112313481B (en) * | 2018-07-12 | 2024-04-16 | 日立安斯泰莫株式会社 | Flow sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5763575B2 (en) | 2015-08-12 |
| CN106092233B (en) | 2019-01-22 |
| WO2013140674A1 (en) | 2013-09-26 |
| JP2013195231A (en) | 2013-09-30 |
| DE112012006049T5 (en) | 2014-12-18 |
| CN106092233A (en) | 2016-11-09 |
| CN104024807B (en) | 2016-07-06 |
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