CN106092233A - Flow transducer and manufacture method thereof - Google Patents
Flow transducer and manufacture method thereof Download PDFInfo
- Publication number
- CN106092233A CN106092233A CN201610390927.XA CN201610390927A CN106092233A CN 106092233 A CN106092233 A CN 106092233A CN 201610390927 A CN201610390927 A CN 201610390927A CN 106092233 A CN106092233 A CN 106092233A
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- Prior art keywords
- semiconductor chip
- framework
- flow
- chip chp1
- testing division
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
- G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
- G01F1/684—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow
- G01F1/688—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow using a particular type of heating, cooling or sensing element
- G01F1/69—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow using a particular type of heating, cooling or sensing element of resistive type
- G01F1/692—Thin-film arrangements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
- G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
- G01F1/684—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow
- G01F1/6845—Micromachined devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Physics & Mathematics (AREA)
- Fluid Mechanics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Volume Flow (AREA)
Abstract
The present invention provides a kind of aberrations in property that can suppress each flow transducer to improve the technology of (also comprise and improve reliability to realize the situation that performance improves) to realize performance.Such as, when clipping, by mold (UM) and lower mold (BM), lead frame (LF) being equipped with semiconductor chip (CHP1), it is equipped with between the lead frame (LF) of semiconductor chip (CHP1) and mold (UM) and is provided with framework (FB) and elastomer thin film (LAF).Now, the height of framework (FB) is less than the coefficient of elasticity of semiconductor chip (CHP1) higher than the height of flow testing division (FDU) and the coefficient of elasticity of framework (FB).
Description
Technical field
The present invention relates to flow transducer and manufacturing technology thereof, particularly relate to be applicable to structure effective of flow transducer
Technology.
Background technology
In Japanese Unexamined Patent Publication 2004-74713 publication (patent documentation 1), the manufacture method as quasiconductor housing is open
There is the mould hold assembly being provided by divergence type thin web, the method flowing into resin.
It addition, in Japanese Unexamined Patent Publication 2011-122984 publication (patent documentation 2), flow about making gas (air)
The flow transducer that flow testing division part is exposed, records mould and uses and put into part or elastomer thin film by spring-loaded
The manufacture method of flow transducer.
Prior art literature
Patent documentation
Patent documentation 1: Japanese Unexamined Patent Publication 2004-74713 publication
Patent documentation 2: Japanese Unexamined Patent Publication 2011-122984 publication
Summary of the invention
Invention is wanted to solve the technical problem that
Such as, currently in the internal combustion engine of automobile etc., it is provided with electronic control fuel injection device.This electronically controlled fuel
Injection apparatus has by being suitably adjusted the amount of the gas (air) and fuel that flow into internal combustion engine, makes internal combustion engine effective
The effect of ground operating.Therefore, in electronic control fuel injection device, need the correct gas (sky grasped and flow into internal combustion engine
Gas).Therefore, electronic control fuel injection device is provided with flow transducer (the air mass flow biography measuring gas (air) flow
Sensor).
In flow transducer, the flow transducer manufactured especially with semiconductor microactuator process technology, because can cut
Subtract cost and can be with low driven by power, so being concerned.This flow transducer, for example with following structure: by silicon shape
The back side of the Semiconductor substrate become forms the barrier film (diaphragm) (thin plate part) utilizing anisotropic etching and formed, with
The surface of the Semiconductor substrate that this barrier film is relative is formed with the flow testing division formed by heating resistor and temperature detecting resistance body.
In actual flow transducer, such as, except being formed with the first semiconductor chip of barrier film and flow testing division
Outside, also there is the second semiconductor chip being formed with the control circuit portion controlling flow testing division.Above-mentioned first semiconductor core
Sheet and the second semiconductor chip are such as mounted on substrate, electrically connect with the distribution (terminal) being formed on substrate.Specifically,
Such as, the first semiconductor chip is connected with the distribution being formed at substrate by the metal wire that formed by gold thread (spun gold), and the second half
Conductor chip uses the concavo-convex electrode (bump electrode) being formed at the second semiconductor chip, with the distribution being formed at substrate
Connect.So, the first semiconductor chip being mounted on substrate and the second semiconductor chip are via the wired electric being formed at substrate
Connect.As a result, it is possible to by being formed at the control circuit portion of the second semiconductor chip stream to being formed at the first semiconductor chip
Amount test section is controlled, and constitutes flow transducer.
Now, the gold thread (spun gold, metal wire) of the first semiconductor chip and substrate is connected in order to prevent from causing because of deformation
Contacts etc., are generally fixed by casting resin (potting resin, joint filling resin, sealing resin).That is, gold thread (metal wire) by
Casting resin covers and fixes, and utilizes this casting resin, protects gold thread (metal wire).On the other hand, flow transducer is constituted
The first semiconductor chip and the second semiconductor chip be not the most filled with resin-encapsulated.In other words, common flow transducer
In, use only gold thread (metal wire) to be filled with the structure that resin covers.
Here, gold thread (metal wire) utilize that casting resin carries out fixing, be not to use mould etc. by the first half
Carry out under the state that conductor chip is fixing, so it some times happens that the first semiconductor core caused because of the contraction of casting resin
The problem that sheet deviates from loading position.Further, because casting resin is formed by dripping, so, there is the chi of casting resin
The problem that very little precision is low.Its result, in each flow transducer, is formed at the taking of the first semiconductor chip of flow testing division
Carrying position and produce deviation, and the most delicate difference of forming position of casting resin, the detection performance of each flow transducer produces partially
Difference.Therefore, in order to suppress the aberrations in property of each flow transducer, need that each flow transducer is carried out detects performance and repair
Just, need to add the performance correction operation in the manufacturing process carrying out flow transducer.Especially, become in performance correction operation
Time longer, there is also the productivity ratio in the manufacturing process of flow transducer and reduce, the problem of the cost increase of flow transducer.And
And, because casting resin does not carry out the promotion of hardening utilizing heating to carry out, institute is so that time till casting resin hardening
Longer, the productivity ratio in the manufacturing process of flow transducer reduces.
It is an object of the invention to provide a kind of aberrations in property that can suppress each flow transducer thus realize performance
Improve the technology of (also comprising the situation improving reliability thus realize performance raising).
The above-mentioned purpose of the present invention and other purpose and new feature, it is possible to according to the record of this specification and attached
Scheme and become clear and definite.
For solving the technical scheme of technical problem
When briefly describing the summary of representational content among invention disclosed in the present application, as described below.
Flow transducer in the embodiment represented possesses: (a) first chip carrying portion；(b) above-mentioned it is arranged in
The first semiconductor chip in one chip carrying portion, above-mentioned first semiconductor chip has: (b1) is formed at the first quasiconductor lining
Flow testing division on the interarea at the end；(b2) in the back side with above-mentioned interarea opposition side of above-mentioned first Semiconductor substrate,
At the barrier film that the region relative with above-mentioned flow testing division is formed.Here, above-mentioned flow transducer contains framework, this framework is carried
On above-mentioned first semiconductor chip and have the peristome at least exposing above-mentioned flow testing division, this framework is by coefficient of elasticity ratio
The material that the coefficient of elasticity of above-mentioned first semiconductor chip is little is formed.And, it is being formed on above-mentioned first semiconductor chip
Above-mentioned flow testing division from the state that the above-mentioned peristome of above-mentioned framework exposes, the part quilt of above-mentioned first semiconductor chip
Packaging body encapsulation containing resin.
It addition, the manufacture method of the flow transducer in the embodiment represented is to have the flow transducer of said structure
Manufacture method.The manufacture method of above-mentioned flow transducer includes: (a) preparation has the base material in above-mentioned first chip carrying portion
Operation；B () prepares the operation of above-mentioned first semiconductor chip；C () carries above-mentioned the first half in above-mentioned first chip carrying portion
The operation of conductor chip.Then, also include: (d) is after above-mentioned (c) operation, so that above-mentioned flow testing division is contained in and is formed at
The mode of the above-mentioned peristome of above-mentioned framework, configures the operation of above-mentioned framework on above-mentioned first semiconductor chip；(e) upper
After stating (d) operation, make the above-mentioned flow testing division being formed at above-mentioned first semiconductor chip expose, and utilize above-mentioned packaging body
Operation by the part encapsulation of above-mentioned first semiconductor chip.Here, above-mentioned (e) operation includes: (e1) prepare mold and
The operation of lower mold；(e2) after above-mentioned (e1) operation, by making the bottom surface of above-mentioned mold be close to above-mentioned framework, bag is formed
Place the first space stating flow testing division, and utilize above-mentioned mold and above-mentioned lower mold to clip across second space to be equipped with
The operation of the above-mentioned base material of above-mentioned first semiconductor chip；(e3) after above-mentioned (e2) operation, above-mentioned resin is made to flow into above-mentioned
The operation of second space.
Invention effect
If it is during the effect that simple declaration obtains among invention disclosed herein, by the invention of representative, as follows
Described.
The aberrations in property of each flow transducer can be suppressed to realize the raising of performance.
Accompanying drawing explanation
Fig. 1 is to represent the circuit block diagram that the circuit of the flow transducer in embodiment 1 is constituted.
Fig. 2 is that the layout of the semiconductor chip of the part representing the flow transducer constituted in embodiment 1 is constituted
Plane graph.
Fig. 3 is to represent the figure that the actual installation of the flow transducer in embodiment 1 is constituted, and expression resin is packaged
The figure of composition before.Particularly, (a) is to represent the plane graph that the actual installation of the flow transducer in embodiment 1 is constituted,
B () is the sectional view cut off with line A-A of (a), (c) is the plane graph at the back side representing semiconductor chip.
Fig. 4 (a) is the plane graph of the composition representing framework, and (b) is the sectional view cut off with line A-A of (a), and (c) is (a)
With line B-B cut off sectional view.
Fig. 5 is to represent the figure that the actual installation of the flow transducer in embodiment 1 is constituted, and expression resin is packaged
The figure of composition afterwards.Particularly, (a) is to represent the plane graph that the actual installation of the flow transducer in embodiment 1 is constituted,
B () is the sectional view cut off with line A-A of (a), (c) is the sectional view cut off with line B-B of (a).
Fig. 6 is to represent the plane graph that the actual installation of the flow transducer after being removed by sealing strip is constituted.
Fig. 7 is the sectional view of the manufacturing process representing the flow transducer in embodiment 1.
Fig. 8 is the sectional view representing the then manufacturing process of the flow transducer of Fig. 7.
Fig. 9 is the sectional view representing the then manufacturing process of the flow transducer of Fig. 8.
Figure 10 is the sectional view representing the then manufacturing process of the flow transducer of Fig. 9.
Figure 11 is the sectional view representing the then manufacturing process of the flow transducer of Figure 10.
Figure 12 is the sectional view representing the then manufacturing process of the flow transducer of Figure 11.
Figure 13 be represent do not use elastomer thin film, only across framework, mold be pressed into be equipped with semiconductor chip
The sectional view of an example of lead frame.
Figure 14 is the figure of the example representing the correlation technique not using framework to carry out resin-encapsulated.
Figure 15 (a) is the plane graph representing the flow transducer in variation 1, and (b) is the cutting with line A-A cut-out of (a)
Face figure, (c) is the sectional view cut off with line B-B of (a).
Figure 16 is the figure in the cross section representing the flow transducer in variation 1.
Figure 17 is the plane graph of the structure representing the flow transducer in variation 2, before resin-encapsulated.
Figure 18 is the sectional view cut off with line A-A of Figure 17.
Figure 19 is the sectional view cut off with line B-B of Figure 17.
Figure 20 is to represent the figure that the actual installation of the flow transducer in embodiment 2 is constituted, and expression resin seals
The figure of the composition before dress.Particularly, (a) is to represent the plane that the actual installation of the flow transducer in embodiment 2 is constituted
Figure, (b) is the sectional view cut off with line A-A of (a), and (c) is the sectional view cut off with line B-B of (a), and (d) is to represent partly to lead
The plane graph at the back side of body chip.
Figure 21 is to represent the figure that the actual installation of the flow transducer in embodiment 2 is constituted, and expression resin seals
The figure of the composition after dress.Particularly, (a) is to represent the plane graph that the actual installation of the flow transducer in embodiment 2 is constituted,
B () is the sectional view cut off with line A-A of (a), (c) is the sectional view cut off with line B-B of (a).
Figure 22 is to represent the plane graph that the actual installation of the flow transducer after being removed by sealing strip is constituted.
Figure 23 is the sectional view of the manufacturing process representing the flow transducer in embodiment 2.
Figure 24 is the sectional view representing the then manufacturing process of the flow transducer of Figure 23.
Figure 25 is the sectional view representing the then manufacturing process of the flow transducer of Figure 24.
Figure 26 is the sectional view representing the then manufacturing process of the flow transducer of Figure 25.
Detailed description of the invention
In the following embodiments, some it is being divided into whenever necessary or embodiment is said for convenience
Bright, but be in addition to outside situation about explicitly indicating that especially, they the most not have no bearing on, and a side has the part of the opposing party
Or whole variation, in detail, the relation of supplementary notes etc..
It addition, in the following embodiments, in (including number, numerical value, amount, scope etc.) such as the quantity mentioning key element
In the case of, the situation except expressing especially and principle are defined as clearly, in addition to certain amount of situation etc., do not limit
It is set to specific quantity, can be specific quantity above and below.
Further, in the following embodiments, this element (also comprising key element step etc.) is except the feelings expressed especially
Being considered clearly in condition and principle outside necessary situation, the most necessary, this is self-evident.
Equally, in the following embodiments, when mentioning the shape of element etc., position relationship etc., except spy
It is considered clearly in situation about not expressing and principle, outside really not so situation etc., also to comprise substantially near with its shape etc.
Like or similar situation.This is the most identical with scope for above-mentioned numerical value.
It addition, in all figures that embodiment is illustrated, same parts is marked in principle identical attached
Figure labelling, omits its repeat specification.Wherein, for accompanying drawing easy to understand, in plan view, advantage mark shade.
(embodiment 1)
The circuit of ＜ flow transducer constitutes ＞
First, illustrate that the circuit of flow transducer is constituted.Fig. 1 is the electricity representing the flow transducer in present embodiment 1
The circuit block diagram that road is constituted.In Fig. 1, the flow transducer in present embodiment 1, first, have for controlling flow transducer
CPU (Central Processing Unit) 1, and, have for this CPU1 input input signal input circuit 2
With the output circuit 3 for exporting the output signal from CPU1.And, flow transducer is provided with the memorizer of storage data
4, CPU1 access memorizer 4, it is possible to reference to the data being stored in memorizer 4.
Then, CPU1 is connected via the base stage of output circuit 3 with transistor Tr.And, the colelctor electrode of this transistor Tr with
Power ps connects, and the emission electrode of transistor Tr is connected with ground (GND) via heating resistor HR.Therefore, transistor Tr by
CPU1 controls.In other words, the base stage of transistor Tr is connected with CPU1 via output circuit 3, so, from the output signal of CPU1
It is transfused to the base stage of transistor Tr.
As a result, utilize the output signal (control signal) from CPU1, control the electric current of flowing in transistor Tr.When
When the electric current flowed in transistor Tr due to the output signal from CPU1 becomes big, supply to heating resistor HR from power ps
Electric current become big, the heating quantitative change of heating resistor HR is big.
On the other hand, when the electric current owing to flowing in transistor Tr from the output signal of CPU1 tails off, to heating
The electric current of resistive element HR supply tails off, and the heat that adds of heating resistor HR reduces.
So understand, in the flow transducer in present embodiment 1, CPU1 control to flow in heating resistor HR
The magnitude of current, thus, the caloric value from heating resistor HR is controlled by CPU1.
Then, in the flow transducer in present embodiment 1, CPU1 the electricity of flowing in heating resistor HR is controlled
Stream, is therefore provided with computer heating control bridge HCB.This computer heating control bridge HCB detects the caloric value distributed from heating resistor HR, should
Testing result exports input circuit 2.Its result, CPU1 can input the testing result from computer heating control bridge HCB, based on this
The situation of kind, controls the electric current of flowing in transistor Tr.
Specifically, as it is shown in figure 1, computer heating control bridge HCB has structure between reference voltage Vref1 and ground (GND)
The resistive element R1～resistive element R4 of Cheng Qiao.In the computer heating control bridge HCB such as constituted with upper type, heat heating resistor HR
After gas than suction temperature in the case of certain uniform temperature the highest (Δ T, such as, 100 DEG C), with current potential and the joint of node A
The mode that potential difference is 0V of the current potential of some B sets resistive element R1～the resistance value of resistive element R4.That is, computer heating control bridge is constituted
The resistive element R1～resistive element R4 of HCB with the member of formation that resistive element R1 and resistive element R3 is connected in series and by resistive element R2 and
The mode that the member of formation that resistive element R4 is connected in series connects between reference voltage Vref1 and ground (GND) side by side constitutes bridge.
And, the junction point of resistive element R1 and resistive element R3 is node A, and the junction point of resistive element R2 and resistive element R4 is node B.
Now, heating resistor HR the gas after heating contacts with the resistive element R1 constituting computer heating control bridge HCB.Cause
This, due to the caloric value from heating resistor HR, the resistance value of the resistive element R1 constituting computer heating control bridge HCB is main change
Change.So, when the resistance value of resistive element R1 changes, the potential difference between node A and node B changes.This node A and
The potential difference of node B is transfused to CPU1 via input circuit 2, so, CPU1 potential difference based on node A and node B controls
The electric current of flowing in transistor Tr.
Specifically, CPU1 controls the electric current of flowing in transistor Tr so that the potential difference of node A and node B becomes
0V, controls the caloric value from heating resistor HR.In other words, it is known that: in the flow transducer in present embodiment 1,
CPU1 output based on computer heating control bridge HCB carries out feedback control, and the gas after being heated by heating resistor HR is than air-breathing temperature
Spend the certain value of certain uniform temperature the highest (Δ T, such as, 100 DEG C).
Then, the flow transducer in present embodiment 1 has the temperature sensor bridge of the flow for detected gas
TSB.This temperature sensor bridge TSB has 4 the temperature detecting resistance bodies constituting bridge between reference voltage Vref2 and ground (GND).
These 4 temperature detecting resistance bodies are made up of 2 upstreams temperature detecting resistance body UR1, UR2 and 2 downstreams temperature detecting resistance body BR1, BR2.
That is, the direction of the arrow of Fig. 1 represents the direction that gas flows, and the upstream side in the direction that this gas flows is provided with
Upstream temperature detecting resistance body UR1, UR2, be provided with downstream temperature detecting resistance body BR1, BR2 in downstream.These upstream temperature detecting resistance bodies
UR1, UR2 are configured to the distance of heating resistor HR identical with downstream temperature detecting resistance body BR1, BR2.
In temperature sensor bridge TSB, upstream temperature detecting resistance body UR1 and downstream temperature detecting resistance body BR1 is in reference voltage
Being connected in series between Vref2 and ground (GND), the junction point of this upstream temperature detecting resistance body UR1 and downstream temperature detecting resistance body BR1 is
Node C.
On the other hand, upstream temperature detecting resistance body UR2 and downstream temperature detecting resistance body BR2 is in ground (GND) and reference voltage
Being connected in series between Vref2, the junction point of this upstream temperature detecting resistance body UR2 and downstream temperature detecting resistance body BR2 is node D.And,
The current potential of node C and the current potential of node D are transfused to CPU1 via input circuit 2.And, setting upstream temperature detecting resistance body UR1,
UR2 and each resistance value of downstream temperature detecting resistance body BR1, BR2 so that the flow of the gas flowed in the direction of the arrow is the nothing of zero
During wind state, the poor current potential of the current potential of node C and the current potential of node D becomes 0V.
Specifically, upstream temperature detecting resistance body UR1, UR2 and downstream temperature detecting resistance body BR1, BR2 are configured to away from heating resistor
The distance of body HR is equal and resistance value is the most equal.Therefore, it is known that in temperature sensor bridge TSB, with heating resistor HR send out
Heat is without seeing, and when for windless condition, the poor current potential of node C and node D is 0V.
The action ＞ of ＜ flow transducer
Flow transducer in present embodiment 1 is constructed as described above, below, with reference to Fig. 1, its action is said
Bright.First, CPU1, via the output circuit 3 base stage output signal output (control signal) to transistor Tr, makes current flow through crystalline substance
Body pipe Tr.So, electric current flows to be connected with the emission electrode of transistor Tr from the power ps being connected with the colelctor electrode of transistor Tr
Heating resistor HR.Therefore, heating resistor HR heating.And, the gas after the heating heating of origin spontaneous heating resistive element HR
The resistive element R1 constituting computer heating control bridge HCB is heated by body.
Now, set each resistance value of resistive element R1～R4, be only above necessarily at the gas heated by heating resistor HR
In the case of temperature (such as, 100 DEG C) so that the poor current potential of the node A and node B of computer heating control bridge HCB is 0V.Therefore, example
In the case of being only above uniform temperature (such as, 100 DEG C) such as the gas after being heated by heating resistor HR, computer heating control bridge
Poor current potential between the node A and node B of HCB is 0V, and this difference current potential (0V) is transfused to CPU1 via input circuit 2.And, know
The most out self-heating control the CPU1 that poor current potential is 0V of bridge HCB via output circuit 3 to the output of the base stage of transistor Tr for
The output signal (control signal) of the magnitude of current maintained the statusquo.
On the other hand, heating resistor HR in the case of gas deviation uniform temperature (such as, 100 DEG C) after heating,
Producing between the node A and node B of computer heating control bridge HCB is not the poor current potential of 0V, and this difference current potential is transfused to via input circuit 2
CPU1.And, identify the CPU1 producing the poor current potential from computer heating control bridge HCB via output circuit 3 to transistor Tr's
Base stage output difference current potential becomes the output signal (control signal) of 0V.
Such as, the direction higher than uniform temperature (such as, 100 DEG C) of the gas after being heated is being produced by heating resistor HR
In the case of difference current potential, CPU1 exports, to the base stage of transistor Tr, the control signal that the electric current of flowing reduces in transistor Tr
(output signal).To this, producing the gas after being heated by heating resistor HR less than uniform temperature (such as, 100 DEG C) direction
Poor current potential in the case of, CPU1 exports, to the base stage of transistor Tr, the control signal that the electric current of flowing increases in transistor Tr
(output signal).
As with upper type, CPU1 carries out feedback control based on the output signal from computer heating control bridge HCB so that add thermal control
Poor current potential between the node A and node B of bridge HCB processed becomes 0V (poised state).Thus, it is known that in present embodiment 1
In flow transducer, heating resistor HR the gas after heating is controlled as uniform temperature.
Then, the action to the flow of the gas in the flow transducer measured in present embodiment 1 illustrates.First
First, the situation of windless condition is illustrated.Set upstream temperature detecting resistance body UR1, UR2 and downstream temperature detecting resistance body BR1, BR2
Each resistance value so that in the direction of the arrow the flow of flowing gas be zero windless condition time, the joint of temperature sensor bridge TSB
The poor current potential of the current potential of some C and the current potential of node D is 0V.
Specifically, upstream temperature detecting resistance body UR1, UR2 and downstream temperature detecting resistance body BR1, BR2 are configured to away from heating resistor
The distance of body HR is equal and resistance value is the most equal.Therefore, in temperature sensor bridge TSB, with the caloric value of heating resistor HR
Unrelated, when for windless condition, the poor current potential of node C and node D becomes 0V, and this difference current potential (0V) is defeated via input circuit 2
Enter CPU1.And, identify what the CPU1 that poor current potential the is 0V identification from temperature sensor bridge TSB was flowed in the direction of the arrow
The flow of gas is zero, represents that gas flow Q is zero via the output circuit 3 flow transducer output from present embodiment 1
Output signal.
Then, it is considered to the situation that gas flows in the direction of arrow of Fig. 1.In this case, as it is shown in figure 1, be arranged in
Upstream temperature detecting resistance body UR1, UR2 of the upstream side of the flow direction of gas is by the gas cooling flowed in the direction of the arrow.Cause
This, the temperature of upstream temperature detecting resistance body UR1, UR2 reduces.To this, due under the gas flow after being heated by heating resistor HR
Trip temperature detecting resistance body BR1, BR2, so be arranged in downstream temperature detecting resistance body BR1, the BR2 in the downstream of the flow direction of gas
Temperature rises.Its result, the balance of temperature sensor bridge TSB crumbles, between the node C and node D of temperature sensor bridge TSB
Produce the poor current potential being not zero.
This difference current potential is transfused to CPU1 via input circuit 2.And, identify the difference electricity from temperature sensor bridge TSB
The CPU1 that position is not zero identifies that the flow of the gas flowed in the direction of the arrow is not zero.Then, CPU1 accesses memorizer 4.?
In memorizer 4, storage has the contrast table (form) making difference current potential corresponding with gas flow, so, have accessed the CPU1 of memorizer 4
Contrast table according to being stored in memorizer 4 calculates gas flow Q.So, CPU1 the gas flow Q calculated is via output circuit
The 3 flow transducer outputs from present embodiment 1.Understand as previously discussed, use the flow sensing in present embodiment 1
Device, it is possible to obtain the flow of gas.
The layout of ＜ flow transducer constitutes ＞
Then, the layout composition of the flow transducer in present embodiment 1 is illustrated.Such as, this reality shown in Fig. 1
Execute the flow transducer in mode 1 and be formed at 2 semiconductor chips.Specifically, heating resistor HR, computer heating control bridge HCB
Being formed at a semiconductor chip with temperature sensor bridge TSB, CPU1, input circuit 2, output circuit 3 and memorizer 4 etc. are formed
At other semiconductor chip.Hereinafter, to being formed with heating resistor HR, computer heating control bridge HCB and temperature sensor bridge TSB
The layout composition of semiconductor chip illustrates.
Fig. 2 is the layout of the semiconductor chip CHP1 representing the part constituting flow transducer in present embodiment 1
The plane graph constituted.First, as in figure 2 it is shown, semiconductor chip CHP1 rectangular shaped, gas is from this semiconductor chip CHP1's
Left side (direction of arrow) to the right flowing.And, as in figure 2 it is shown, the rear side shape of the semiconductor chip CHP1 of rectangular shaped
Become to have the barrier film DF of rectangular shape.Barrier film DF represents the caul plate area of the lower thickness of semiconductor chip CHP1.That is, be formed every
The thickness in the thickness in the region of the film DF region than other semiconductor chip CHP1 is thin.
As in figure 2 it is shown, in the surface district of the semiconductor chip CHP1 relative with the rear surface regions being so formed at barrier film DF
Territory, is formed with flow testing division FDU.Specifically, the central part at this flow testing division FDU is formed with heating resistor HR,
This heating resistor HR is formed around constituting the resistive element R1 of computer heating control bridge.And, in the outside of flow testing division FDU
It is formed with resistive element R2～R4 constituting computer heating control bridge.Computer heating control is controlled by resistive element R1～R4 so formed
Bridge.
Particularly, the resistive element R1 constituting computer heating control bridge is formed at the vicinity of heating resistor HR, it is possible to make electricity
Resistance body R1 precision reflects the temperature of the gas of the heating heating of origin spontaneous heating resistive element HR well.
On the other hand, resistive element R2～R4 constituting computer heating control bridge is arranged off heating resistor HR, thus it is possible to
It is difficult to be affected by from the heating of heating resistor HR.
Therefore, resistive element R1 can be configured to react the temperature of the gas after being heated by heating resistor HR sensitively,
Further, resistive element R2～R4 is configured to be difficult to be affected by heating resistor HR and easily resistance value is maintained certain
Value.Therefore, it is possible to improve the accuracy of detection of computer heating control bridge.
Further, in the way of clipping the heating resistor HR being formed at flow testing division FDU, upstream temperature detecting resistance body is configured
UR1, UR2 and downstream temperature detecting resistance body BR1, BR2.Specifically, the gas upstream side in flow arrow direction forms upstream survey
Temperature resistive element UR1, UR2, formation downstream, downstream temperature detecting resistance body BR1, the BR2 in gas flow arrow direction.
By such as being constituted with upper type, in the case of gas flows in the direction of the arrow, it is possible to make upstream temperature detecting resistance body
The temperature of UR1, UR2 reduces, further, it is possible to make the temperature of downstream temperature detecting resistance body BR1, BR2 rise.This sample loading mode is utilized to configure
Temperature sensor is formed at upstream temperature detecting resistance body UR1, UR2 and downstream temperature detecting resistance body BR1, BR2 of flow testing division FDU
Bridge.
Above-mentioned heating resistor HR, upstream temperature detecting resistance body UR1, UR2 and downstream temperature detecting resistance body BR1, BR2 can pass through
Such as form platinum in the method utilizing sputtering method, CVD (Chemical Vapor Deposition, chemical gaseous phase deposit) method etc.
The semiconductor film of the metal film of (platinum, platina) etc., polysilicon (polysilicon, polycrystal silicon) etc.
After film, the method for ion(ic) etching etc. is utilized to pattern and formed.
The heating resistor HR that this sample loading mode is constituted, resistive element R1～R4 constituting computer heating control bridge and composition temperature pass
Upstream temperature detecting resistance body UR1, UR2 and downstream temperature detecting resistance body BR1, BR2 of sensor bridge are each connected with distribution WL1, are brought out
Pad (pad, pad) PD1 to the configuration below along semiconductor chip CHP1.
As previously discussed, the semiconductor chip CHP1 of the part constituting flow transducer in present embodiment 1 is by cloth
Office is constituted.Actual flow transducer includes: be formed with heating resistor HR, computer heating control bridge HCB and temperature sensor bridge TSB
A semiconductor chip；With another semiconductor core being formed with CPU1, input circuit 2, output circuit 3 and memorizer 4 etc.
Sheet, forms the structure on the substrate of these semiconductor chip actual installation.
Hereinafter, the flow transducer in the present embodiment 1 such as constituted with upper type actual installation is illustrated.
The actual installation of the flow transducer in ＜ embodiment 1 constitutes ＞
Fig. 3 is to represent the figure that the actual installation of the flow transducer FS1 in present embodiment 1 is constituted, and is to represent to use resin
The figure of the composition before being packaged.Particularly, Fig. 3 (a) is the reality representing the flow transducer FS1 in present embodiment 1
The plane graph constituted is installed.Fig. 3 (b) is the sectional view cut off with line A-A of Fig. 3 (a), and Fig. 3 (c) is to represent semiconductor chip
The plane graph at the back side of CHP1.
First, as shown in Fig. 3 (a), flow transducer FS1 in present embodiment 1 has and is such as formed by copper product
Lead frame (lead frame) LF.This lead frame LF is by sealing strip (dam bar, closeouts) the DM encirclement constituting outer frame body
Inside has chip carrying portion TAB1 and chip carrying portion TAB2.And, chip carrying portion TAB1 is equipped with semiconductor core
Sheet CHP1, is equipped with semiconductor chip CHP2 on chip carrying portion TAB2.
Semiconductor chip CHP1 rectangular shaped, is formed with flow testing division FDU in substantially central portion.And, with flow
Test section FDU connect distribution WL1 be formed on semiconductor chip CHP1, this distribution WL1 with along semiconductor chip CHP1's
While multiple pads (pad) PD1 formed connects.In other words, flow testing division FDU and multiple pad PD1 is by distribution WL1 even
Connect.These pads PD1 be formed at lead-in wire (lead) LD1 of lead frame LF via the metal wire such as formed by gold thread (spun gold)
W1 connects.It is formed at the lead-in wire LD1 of lead frame LF and then passes through such as by gold with the pad PD2 being formed at semiconductor chip CHP2
The metal wire W2 that line is formed connects.
Semiconductor chip CHP2 is formed by MISFET (Metal Insulator Semiconductor Field
Effect Transistor (metal-insulator-semiconductor field effect transistor)) etc. semiconductor element, distribution formed collection
Become circuit.Specifically, formed the CPU1 shown in pie graph 1, input circuit 2, output circuit 3 or, the collection of memorizer 4 etc.
Become circuit.These integrated circuits are connected with pad PD2, the pad PD3 of the function as external connection terminals.And,
The pad PD3 being formed at semiconductor chip CHP2 and the lead-in wire LD2 being formed at lead frame LF is by the gold such as formed by gold thread
Belong to line W3 to connect.Understand like this, be formed with the semiconductor chip CHP1 of flow testing division FDU and be formed with the half of control circuit
Conductor chip CHP2 connects by being formed at the lead-in wire LD1 of lead frame LF.Wherein, although it is not shown, but partly leading in Fig. 3
The outmost surface of body chip CHP1, as described later, with the stress buffer of resin of bonding, surface protection, insulation etc. as mesh
, and could be formed with polyimide film (polyimide film).
Then, as shown in Fig. 3 (b), it is formed with chip carrying portion TAB1 at lead frame LF, on this chip carrying portion TAB1
It is equipped with semiconductor chip CHP1.This semiconductor chip CHP1 passes through jointing material (binding material, bond) ADH1 and chip
Equipped section TAB1 bonds.Barrier film DF (thin plate part) it is formed with, relative with barrier film DF (right at the back side of semiconductor chip CHP1
Put) the surface of semiconductor chip CHP1 be formed with flow testing division FDU.On the other hand, in the lower section being present in barrier film DF
The bottom of chip carrying portion TAB1 is formed with peristome OP1.Wherein, the chip carrying in the lower section being present in barrier film DF is illustrated
The bottom of portion TAB1 is formed with the example of peristome OP1, but the thought of the technology in present embodiment 1 is not limited to this, also
The lead frame LF being formed without peristome OP1 can be used.
Further, as shown in Fig. 3 (b), semiconductor chip CHP1 surface (above), in addition to flow testing division FDU,
It is also formed with the pad PD1 being connected with flow testing division FDU, this pad PD1 pass through metal wire W1 and be formed at lead frame LF's
Lead-in wire LD1 connects.And, lead frame LF is also equipped with semiconductor chip CHP2, quasiconductor in addition to semiconductor chip CHP1
Chip CHP2 is bonded by jointing material ADH2 and chip carrying portion TAB2.Further, the pad of semiconductor chip CHP2 it is formed at
PD2 and the lead-in wire LD1 being formed at lead frame LF is connected by metal wire W2.It addition, be formed at the pad of semiconductor chip CHP2
PD3 and the lead-in wire LD2 being formed at lead frame LF is electrically connected by metal wire W3.
For bonding semiconductor chip CHP1 and the jointing material ADH1 of chip carrying portion TAB1, bonding semiconductor chip
CHP2 and the jointing material ADH2 of chip carrying portion TAB2, it is possible to use such as with epoxy resin (epoxy resin), polyurethane
The jointing material that thermosetting resin is composition of resin (polyurethane resin) etc., with polyimide resin
The thermoplastic resin of (polyimide resin), acrylic resin (acrylic resin), fluororesin etc. is the viscous of composition
Condensation material.
Such as, semiconductor chip CHP1 and the bonding of chip carrying portion TAB1, it is possible to viscous by coating as shown in Fig. 3 (c)
Condensation material ADH1, silver paste etc. or utilize the jointing material of lamellar to carry out.Fig. 3 (c) is the back side representing semiconductor chip CHP1
Plane graph.As shown in Fig. 3 (c), it is formed with barrier film DF at the back side of semiconductor chip CHP1, is coated with in the way of surrounding this barrier film DF
It is covered with jointing material ADH1.Additionally, in Fig. 3 (c), represent and apply jointing material in the way of quadrangle form surrounds barrier film DF
The example of ADH1, but it is not limited to this, for example, it is possible to apply in the way of surrounding barrier film DF by the arbitrary shape of elliptical shape
Jointing material ADH1.
Further, in present embodiment 1, as shown in Fig. 3 (a) and Fig. 3 (b), in a part of semiconductor chip CHP1
It is formed with framework FB.This framework FB such as rectangular shaped, is being internally formed peristome OP (FB).The configuration of this framework FB shapes
Become the flow testing division FDU on the interarea of semiconductor chip CHP1 to expose from peristome OP (FB), and be configured to be formed at half
Multiple pad PD1 of conductor chip CHP1 expose the outside in framework FB.
Hereinafter the composition of this framework FB is illustrated.Fig. 4 is the figure of the composition representing framework FB.Fig. 4 (a) is to represent frame
The plane graph of the composition of body FB, Fig. 4 (b) is the sectional view cut off with line A-A of Fig. 4 (a).It addition, Fig. 4 (c) is Fig. 4 (a)
The sectional view cut off with line B-B.
Understand as shown in Fig. 4 (a), framework FB rectangular shaped, be internally formed peristome OP (FB) at frame portion FP.And
And, as shown in Fig. 4 (b), Fig. 4 (c), framework FB is formed with the wall portion WP of parallel with the side of semiconductor chip CHP1 (parallel).
And, as shown in Fig. 3 (b), by making this wall portion WP and semiconductor chip CHP1 be close to (be in close contact, bond), it is possible to
Under the state of semiconductor chip CHP1 para-position, framework FB is arranged on semiconductor chip CHP1.Now, framework FB can be with half
Conductor chip CHP1 bonds, or does not bonds with semiconductor chip CHP1.Particularly, glue with semiconductor chip CHP1 in framework FB
In the case of conjunction, it is possible to obtain the effect of position deviation (dislocation) being prevented from framework FB.Additionally, be formed at the wall of framework FB
As long as at least one side of portion WP and semiconductor chip CHP1 is correspondingly arranged.
Here, framework FB in present embodiment 1 is characterised by: constitute the coefficient of elasticity of material of framework FB less than structure
Become this point of coefficient of elasticity of the material of semiconductor chip CHP1.Now, coefficient of elasticity refers to framework FB and semiconductor chip CHP1
Spring rate.Spring rate is that the Hooke's law that the stress in elastomer and deformation are proportional to one another is expressed as " stress and deformation
Proportional " form time ratio fixed number (constant).
For example, it is preferable to the comparison of the coefficient of elasticity of the coefficient of elasticity of framework FB and semiconductor chip CHP1 is temperature 25 DEG C
Compare under (room temperature).It addition, the comparison of coefficient of elasticity can be at the coefficient of elasticity of framework FB and composition semiconductor chip
Carry out between the coefficient of elasticity of the base material of CHP1.Such as, the feelings formed by monocrystal silicon at the base material constituting semiconductor chip CHP1
Under condition, it is possible to utilize the material that at room temperature coefficient of elasticity is little compared with monocrystal silicon to constitute framework FB.
Above, to being relatively illustrated of the coefficient of elasticity of framework FB and semiconductor chip CHP1, its basic concept exists
In using framework FB of hardness little (soft) compared with semiconductor chip CHP1.So-called hardness at this, it is possible to use such as room
Vickers hardness (Vickers hardness) under Wen, micro-vickers hardness (micro Vickers hardness), Bu Shi are hard
Any one of degree (Brinell hardness) or Rockwell hardness (Rockwell hardness) compares.
Specifically, framework FB that hardness is little compared with semiconductor chip CHP1 can use with PBT resin, ABS resin,
PC resin, nylon resin, PS resin, fluororesin etc. are the thermoplastic resin of composition, with epoxy resin, phenolic resin etc. for becoming
The height of the thermosetting resin divided, the elastomeric material with Teflon (registered trade mark), polyurethane, fluorine etc. as composition, elastomer etc.
Molecular material.
Ejection formation (injection molding), transfer forming process casting resin in mould can be used to note as framework FB
Be moulded shape (mould molding) and formed or utilize above-mentioned material to be formed thin-film member, plate shape part.
It addition, utilize the macromolecular material of thermosetting resin, thermoplastic resin, elastomeric material, elastomer etc. to be formed
Framework FB, it is also possible to the jointing material as framework FB self with cohesive uses, and, it is also possible to filling glass
The organic filler of the inorganic filler of glass, silicon dioxide, Muscovitum, Talcum etc., carbon etc..
Additionally, by the metal material little with silicon resilience in comparison coefficient of pyrite, aluminium alloy, copper alloy etc. is rushed
Pressure, roll-in are processed or are cast and shape, it is also possible to constitute framework FB.
Flow transducer FS1 in flow transducer FS1 in present embodiment 1, before being packaged with resin
Actual installation constitute constructed as described above, below, the actual installation to the flow transducer FS1 after being packaged with resin
Composition illustrates.
Fig. 5 is to represent the figure that the actual installation of the flow transducer FS1 in present embodiment 1 is constituted, and is to represent to use resin
The figure of the composition after being packaged.Particularly, Fig. 5 (a) is the actual peace representing the flow transducer FS1 in present embodiment 1
The plane graph that dress is constituted.Fig. 5 (b) is the sectional view cut off with line A-A of Fig. 5 (a), and Fig. 5 (c) is cutting with line B-B of Fig. 5 (a)
Disconnected sectional view.
In flow transducer FS1 in present embodiment 1, as shown in Fig. 5 (a), it is being formed at semiconductor chip CHP1
Flow testing division FDU from the state that the peristome OP (FB) being formed at framework FB exposes, form semiconductor chip CHP1
The structure (fisrt feature point) that the entirety of a part and semiconductor chip CHP2 is covered by resin M R.That is, in present embodiment 1,
Region by the semiconductor chip CHP1 in addition to being formed with the region of flow testing division FDU and being equipped with the region of framework FB
It is packaged with whole region unification resin M R of semiconductor chip CHP2.
Above-mentioned resin M R can use the heat of such as epoxy resin, phenolic resin (phenol resin, phenol resin) etc. firmly
The property changed resin, Merlon (polycarbonate), polyethylene terephthalate (polyethylene
Etc. terephthalate) thermoplastic resin, and, it is also possible in resin, it is mixed into the filler of glass and Muscovitum etc..
The encapsulation utilizing this resin M R to carry out can be at the semiconductor chip that will be formed with flow testing division FDU with mould
Carry out under the state that CHP1 is fixing, thus it is possible to the position deviation (dislocation) of suppression semiconductor chip CHP1, and can be with tree
A part for fat MR packaged semiconductor CHP1 and semiconductor chip CHP2.Therefore, the flow in present embodiment 1 is used to pass
Sensor FS1, it is meant that the position deviation of each flow transducer FS1 can be suppressed, and semiconductor core can be encapsulated by resin M R
A part of sheet CHP1 and the whole region of semiconductor chip CHP2, it is meant that can suppress to be formed at semiconductor chip CHP1's
The deviation of the position of flow testing division FDU.
Its result, according to present embodiment 1, it is possible to make the position of flow testing division FDU of the flow of detected gas respectively
In flow transducer FS1 unanimously, therefore, it is possible to obtain and can suppress the property of detected gas flow in each flow transducer FS1
The remarkable result of energy deviation.
Then, in the flow transducer FS1 in present embodiment 1, as shown in Fig. 5 (b), the flow detection exposed is surrounded
The height of the height of framework FB in the both sides of portion FDU or resin M R (packaging body) is higher than comprising the half of flow testing division FDU
The height (second feature point) on the surface of conductor chip CHP1.That is, the flow testing division FDU exposed is surrounded around by framework FB,
And the height surrounding framework FB of flow testing division FDU is higher than the height of flow testing division FDU.When having such embodiment party
During second feature point in formula 1, it is possible to prevent parts install assemble time etc. parts collide the flow testing division FDU exposed,
Thus it is possible to prevent from being formed with the breakage of the semiconductor chip CHP1 of flow testing division FDU.In other words, flow testing division is surrounded
The height of framework FB of the FDU height higher than the flow testing division FDU exposed.Therefore, when parts come in contact, first, with
The highest framework FB contact, thus it is possible to prevent the dew of the lowest semiconductor chip CHP1 comprising flow testing division FDU
Appear (XY face) and component contact and cause semiconductor chip CHP1 that breakage occurs.
Particularly, in present embodiment 1, a part of semiconductor chip CHP1 configures framework FB, this framework FB
Coefficient of elasticity less than the coefficient of elasticity of semiconductor chip CHP1.In other words, framework FB is by hardness ratio semiconductor chip CHP1's
The material that hardness is little is constituted.Therefore, in the case of parts contact with framework FB, it is possible to utilize the change of smaller framework FB of hardness
Shape absorbs impact, therefore, it is possible to suppression impact is passed to the semiconductor chip CHP1 being arranged under framework FB, thus, energy
Enough it is effectively prevented the breakage of semiconductor chip CHP1.
Additionally, the height of framework FB and resin M R (packaging body) is higher than the semiconductor chip comprising flow testing division FDU
The height on the surface of CHP1, the height of framework FB can height than resin M R (packaging body) high, it is also possible to lower than it, also
Can be on one face.
It addition, in present embodiment 1, in order to prevent resin M R from invading the inner space of barrier film DF, premise is can
Obtain the structure such as applying jointing material ADH1 in the way of surrounding the barrier film DF at the back side being formed at semiconductor chip CHP1.
And, as shown in Fig. 5 (b) and Fig. 5 (c), it is formed at the chip of the lower section being positioned at barrier film DF at the back side of semiconductor chip CHP1
Peristome OP1 is formed on the bottom of equipped section TAB1, and, resin M R at the back side covering chip carrying portion TAB1 arranges opening
Portion OP2.
Thus, when using the flow transducer FS1 of present embodiment 1, the inner space of barrier film DF is via being formed at chip
The space outerpace of the peristome OP1 of the bottom of equipped section TAB1 and the peristome OP2 and flow transducer FS1 being formed at resin M R
Connection.As a result, it is possible to make the pressure of the pressure of the inner space of barrier film DF and the space outerpace of flow transducer FS1 equal, energy
Enough suppression stress puts on barrier film DF.
As with upper type, the flow transducer FS1 in present embodiment 1 is actually installed composition, but at actual stream
In quantity sensor FS1, after encapsulating by resin M R, the sealing strip DM constituting the outer frame body of lead frame LF is removed.Fig. 6 is to represent
Eliminate the plane graph that the actual installation of the flow transducer FS1 after sealing strip DM is constituted.Understand as shown in Figure 6, by cutting off
Sealing strip DM, it is possible to multiple signals of telecommunication are independently taken out from multiple lead-in wire LD2.
Manufacture method ＞ of the flow transducer in ＜ present embodiment 1
Flow transducer FS1 in present embodiment 1 is constructed as described above, below, with reference to Fig. 7～Figure 14, it is manufactured
Method illustrates.Fig. 7～Figure 14 represents the manufacturing process in the cross section cut off with line A-A in Fig. 5 (a).
First, as it is shown in fig. 7, prepare the lead frame LF such as formed by copper product.This lead frame LF is integrally formed with
Chip carrying portion TAB1, chip carrying portion TAB2, lead-in wire LD1 and lead-in wire LD2, the bottom of chip carrying portion TAB1 is formed with opening
Portion OP1.
Then, as shown in Figure 8, chip carrying portion TAB1 carries semiconductor chip CHP1, at chip carrying portion TAB2
Upper lift-launch semiconductor chip CHP2.Specifically, it is connected to be formed at lead-in wire by semiconductor chip CHP1 with jointing material ADH1
On the chip carrying portion TAB1 of frame LF.Now, so that being formed at the barrier film DF of semiconductor chip CHP1 and being formed at chip carrying
The mode of the peristome OP1 connection of the bottom of portion TAB1, is mounted in semiconductor chip CHP1 on chip carrying portion TAB1.This
Outward, flow testing division FDU, distribution (not shown) and weldering are formed at semiconductor chip CHP1 by common semiconductor fabrication process
Dish PD1.And, such as, by anisotropic etching, at the flow testing division with the surface being formed at semiconductor chip CHP1
The position at the back side that FDU is relative forms barrier film DF.It addition, be formed on the chip carrying portion TAB2 of lead frame LF utilization bonding material
Material ADH2 is also equipped with semiconductor chip CHP2.Advance with common semiconductor fabrication process, at this semiconductor chip CHP2
Form the semiconductor element (not shown) of MISFET etc., distribution (not shown), pad PD2, pad PD3.
Then, as it is shown in figure 9, utilize metal wire (wire) W1 connect be formed at semiconductor chip CHP1 pad PD1 and
It is formed at the lead-in wire LD1 (metal wire bonding (lead-in wire connects)) of lead frame LF.Equally, lead-in wire LD1 and metal wire W2 is utilized to connect
It is formed at the pad PD2 of semiconductor chip CHP2, utilizes lead-in wire LD2 and metal wire W3 to connect and be formed at semiconductor chip CHP2's
Pad PD3.Metal wire W1～W3 is such as formed by gold thread.
Afterwards, as shown in Figure 10, semiconductor chip CHP1 carries framework FB.Specifically, framework FB is taken
Carrying so that in the peristome OP (FB) being formed at inside, built-in (comprising) has the flow inspection being formed at semiconductor chip CHP1
Survey portion FDU (that is, by around), and the multiple pad PD1 being formed at semiconductor chip CHP1 it are configured with in the outside of framework FB.By
This, it is possible to while making flow testing division FDU and multiple pad PD1 expose, framework FB is mounted on semiconductor chip CHP1.
Now, framework FB in present embodiment 1 has wall portion WP, therefore, it is possible to make this wall portion WP and semiconductor chip
The one side of CHP1 is close to, and, framework FB is arranged on semiconductor chip CHP1.Partly lead thereby, it is possible to improve to be mounted in
The positioning precision of framework FB on body chip CHP1, it is possible to reliably make flow testing division FDU from the opening being formed at framework FB
Portion OP (FB) exposes, and is prevented from and the contacting of framework FB and pad PD1.
Here, framework FB and semiconductor chip CHP1 can bond, it is also possible to do not bond.Wherein, partly lead from suppression lift-launch
From the viewpoint of the position deviation of framework FB on body chip CHP1, framework FB is preferably made to bond with semiconductor chip CHP1.
Afterwards, as shown in figure 11, it is formed with the semiconductor chip CHP1 in the near zone of pad PD1 with the encapsulation of resin M R
Surface, metal wire W1, lead-in wire LD1, metal wire W2, whole of interarea, metal wire W3 and the lead-in wire of semiconductor chip CHP2
A part (injection (casting) operation) of LD2.Specifically, as shown in figure 11, by mold UM and lower mold BM across second
Space clips the semiconductor chip CHP1 being equipped with framework FB and the lead frame LF being equipped with semiconductor chip CHP2.Then, exist
In the case of heating, make resin M R flow into this second space, be thus formed in the near zone of pad PD1 with the encapsulation of resin M R
The surface of semiconductor chip CHP1, metal wire W1, lead-in wire LD1, metal wire W2, interarea whole of semiconductor chip CHP2
Face, metal wire W3 and a part of lead-in wire LD2.Now, as shown in figure 11, jointing material ADH1 is passed through in the inner space of barrier film DF
Isolate with above-mentioned second space, so, when with resin M R filling second space, it is also possible to prevent resin M R from invading barrier film DF's
Inner space.
Further, in present embodiment 1, it is possible to will be formed with partly leading of flow testing division FDU via framework FB mould
Carry out under the state that body chip CHP1 is fixing, thus it is possible to the position deviation of suppression semiconductor chip CHP1, and, use resin
A part for MR packaged semiconductor CHP1 and semiconductor chip CHP2.In this case, according to the stream in present embodiment 1
The manufacture method of quantity sensor FS1, it is meant that the position of each flow transducer can be suppressed to deviate, and, encapsulate by resin M R
A part of semiconductor chip CHP1 and the whole region of semiconductor chip CHP2, it is meant that can suppress to be formed at semiconductor core
The position deviation of the flow testing division FDU of sheet CHP1.Its result, according to present embodiment 1, it is possible to make the flow of detected gas
The position of flow testing division FDU is consistent in each flow transducer, it is possible to obtains and can suppress to occur in each flow transducer
The remarkable result of the aberrations in property of detected gas flow.
Here, the manufacture method of the flow transducer FS1 in present embodiment 1 is characterised by, by mold UM across
Elastomer thin film LAF abuts to framework FB that the height of the flow testing division FDU that aspect ratio is formed at semiconductor chip CHP1 is high,
And the lead frame LF being equipped with semiconductor chip CHP1 is clipped with lower mold BM and mold UM.
Thus, according to present embodiment 1, it is ensured that will be formed in the flow testing division FDU of semiconductor chip CHP1 and attached
The first space S P1 (confined space) that near field is surrounded, further, it is possible to encapsulation such as forms region partly leading as representative with pad
The region, surface of body chip CHP1.In other words, according to present embodiment 1, it is possible to make to be formed at the flow of semiconductor chip CHP1
Test section FDU and near zone thereof expose, and encapsulate the surface forming the region semiconductor chip CHP1 as representative with pad
Region.
As it has been described above, the function of the essence of framework FB, when mold UM is abutted to framework FB, it is ensured that by flow detection
The first space S P1 (confined space) that portion FDU and near zone thereof surround, in order to realize the function of this essence, at semiconductor core
In the case of being configured with framework FB on sheet CHP1, it is possible to the structure of the height of the acquirement framework FB height higher than flow testing division FDU
Become.That is, the composition of the height of the framework FB height higher than flow testing division FDU, from the viewpoint of manufacture method, is to guarantee
The composition used for the purpose of the first space S P1 (confined space) flow testing division FDU and near zone thereof are surrounded, utilizes
This composition, it is possible to make to be formed at flow testing division FDU and near zone exposes, and encapsulate with pad formation region as representative
The region, surface of semiconductor chip CHP1.Further, in present embodiment 1, rational height on semiconductor chip CHP1
Framework FB that specific discharge test section FDU is high, with this, it is possible to utilize the grip force protection of mold UM from the peristome OP of framework FB
(FB) the flow testing division FDU exposed.
On the other hand, for the height of the framework FB composition of height higher than flow testing division FDU, from flow transducer
Time from the viewpoint of the structure of FS1, additionally it is possible to grasp being prevented from the parts such as install when assembling of parts and collide the flow that exposes
The structure of test section FDU, thereby, it is possible to obtain semiconductor chip CHP1 broken being prevented from being formed with flow testing division FDU
The advantage damaged.In other words, for the height of the framework FB composition of height higher than flow testing division FDU, it is can be from manufacturer
Two sides of the viewpoint of method and the viewpoint of structure play the composition of significant effect.
Further, framework FB in present embodiment 1 is made up of the material that hardness ratio semiconductor chip CHP1 is little, utilizes this structure
Becoming, framework FB also has other function.Hereinafter, the other function of this framework FB is illustrated.
The manufacture method of the flow transducer FS1 in present embodiment 1 is characterised by, by mold UM and lower mold
When BM clips the lead frame LF being equipped with semiconductor chip CHP1, it is equipped with lead frame LF and the mold of semiconductor chip CHP1
UM and between be provided with framework FB and elastomer thin film LAF.
Such as, there is dimensional discrepancy in the thickness of each semiconductor chip CHP1, therefore, at the thickness of semiconductor chip CHP1
In the case of thinner than average thickness, clipping the lead frame being equipped with semiconductor chip CHP1 with mold UM and lower mold BM
During LF, producing gap, resin M R is likely leaked to flow testing division FDU from this gap.
On the other hand, in the case of the thickness of semiconductor chip CHP1 is thicker than average thickness, with mold UM and
When lower mold BM clips the lead frame LF being equipped with semiconductor chip CHP1, the power putting on semiconductor chip CHP1 becomes big, deposits
In the problem that semiconductor chip CHP1 ruptures.
So, in present embodiment 1, in order to prevent that the thickness deviation of above-mentioned semiconductor chip CHP1 from causing to flow
Resin on test section FDU is revealed or the rupturing of semiconductor chip CHP1, and design is being equipped with drawing of semiconductor chip CHP1
Wire frame LF and mold UM and between (existence) elastomer thin film LAF and framework FB are set.Thus, such as, at semiconductor chip
In the case of the thickness of CHP1 is thinner than average thickness, it is equipped with semiconductor chip clipping with mold UM and lower mold BM
During the lead frame LF of CHP1, although produce gap, but this gap of elastomer thin film LAF filling can be used, therefore, it is possible to prevent
Resin on semiconductor chip CHP1 is revealed.
On the other hand, in the case of the thickness of semiconductor chip CHP1 is thicker than average thickness, with mold UM and
When lower mold BM clips the lead frame LF being equipped with semiconductor chip CHP1, elastomer thin film LAF and framework FB compare semiconductor core
Sheet CHP1 is soft, and therefore, the size of the thickness direction of elastomer thin film LAF and framework FB changes, so that absorbing quasiconductor
The thickness of chip CHP1.Thus, even if the thickness of semiconductor chip CHP1 is thicker than average thickness, it is also possible to prevent required with
On to semiconductor chip CHP1 apply power as a result, be prevented from semiconductor chip CHP1 and rupture.
That is, according to the manufacture method of the flow transducer in present embodiment 1, semiconductor chip CHP1 by mold UM every
Elastomer thin film LAF and the extruding of framework FB.Therefore, it is possible to utilize the thickness change of elastomer thin film LAF and framework FB to inhale
The actual installation deviation of the parts that receipts semiconductor chip CHP1, jointing material ADH1, the thickness deviation of lead frame LF cause.
Particularly, in present embodiment 1, big in the actual installation deviation of the thickness direction (Z-direction) of parts, it is impossible to enough
Utilize elastomer thin film LAF thickness change absorb semiconductor chip CHP1, jointing material ADH1, lead frame LF thickness inclined
In the case of the actual installation deviation of the parts that difference causes, it is also possible to by coefficient of elasticity than the elastic of semiconductor chip CHP1 be
The deformation of the thickness direction (Z-direction) of framework FB that number is little, relaxes the grip force putting on semiconductor chip CHP1.As a result, root
According to present embodiment 1, it is possible to prevent the breakage that the isolating of semiconductor chip CHP1, breach or crackle etc. are representative.
Here, for the actual installation deviation of absorption piece, the coefficient of elasticity ratio of elastomer thin film LAF and framework FB is partly led
The coefficient of elasticity of body chip CHP1 is little is important.Thus, even if in the case of there is the actual installation deviation of parts,
Can effectively be relaxed by the deformation of the thickness of elastomer thin film LAF and framework FB and put on semiconductor chip CHP1
The grip force from mold UM.In other words, in present embodiment 1, the coefficient of elasticity of elastomer thin film LAF and framework FB is than half
The coefficient of elasticity of conductor chip CHP1 is little, and the combination of the coefficient of elasticity of elastomer thin film LAF and framework FB is freely.Example
As, the coefficient of elasticity of framework FB can coefficient of elasticity than elastomer thin film LAF greatly can also be smaller, or can also phase
With.Outside, the macromolecular material utilizing Teflon (registered trade mark), fluororesin etc. can be used as elastomer thin film LAF.
As it has been described above, the other function of framework FB in present embodiment 1 is: the actual installation deviation of suppression component is drawn
The increase of the grip force from mold UM to semiconductor chip CHP1 risen.And, in order to realize this function, this embodiment party
In formula 1, the composition that the coefficient of elasticity of the employing framework FB coefficient of elasticity than semiconductor chip CHP1 is little.Thus, in the reality of parts
In the presence of the installation deviation of border, it is also possible to by the thickness direction of coefficient of elasticity framework FB less than semiconductor chip CHP1
The deformation of (Z-direction), relaxes the grip force putting on semiconductor chip CHP1.As a result, according to present embodiment 1, it is possible to prevent
The breakage that the isolating of semiconductor chip CHP1, breach or crackle etc. are representative.
Then, another feature of present embodiment 1 is illustrated.As shown in figure 11, in present embodiment 1, resin
MR also flows into the rear side of lead frame LF.Therefore, form peristome OP1 in the bottom of chip carrying portion TAB1, therefore, sometimes set
Fat MR can flow into the inner space of barrier film DF from this peristome OP1.
So, in present embodiment 1, the shape of lower mold BM clipping lead frame LF is carried out research design.Specifically
For, as shown in figure 11, put into part (insert die, insert mould, insert die) IP1 what lower mold BM formed overshooting shape, use
When mold UM and lower mold BM clip lead frame LF, the part IP1 that puts into of the overshooting shape being formed at lower mold BM is configured to insert
It is formed at the peristome OP1 of the bottom of chip carrying portion TAB1.Thus, put into part IP1 and seamlessly insert in peristome OP1,
Thus it is possible to prevent resin M R from invading the inner space of barrier film DF from peristome OP1.That is, in present embodiment 1, in lower mold
Have BM formation overshooting shape puts into part IP1, when carrying out resin-encapsulated, this is put into part IP1 insertion and is formed at chip carrying portion
The peristome OP1 of the bottom of TAB1.
Further, in present embodiment 1, research design is carried out in shape put into part IP1.Specifically, in this enforcement
In mode 1, put into part IP1 and include inserting the insertion section of peristome OP1 and support the base portion of this insertion section, the cross section of base portion
Amass and be formed as bigger than the sectional area of insertion section.Thus, put into part IP1 and be formed as being provided with step between insertion section and base portion
The structure in portion, the bottom surface of this stage portion and chip carrying portion TAB1 is close to.
Part IP1 is put into, it is possible to obtain effect shown below by constructed as described above.Such as, only inserted by above-mentioned
In the case of entering the shape that portion's composition puts into part IP1, insertion section is inserted in peristome OP1, therefore, puts into the insertion of part IP1
The diameter in the portion diameter than peristome OP1 is slightly smaller.It is therefore contemplated that in the case of being only made up of insertion section and putting into part IP1, even if
In the case of the insertion section putting into part IP1 is inserted into peristome OP1, between the insertion section and the peristome OP1 that are inserted also
There is small gap.In this case, resin M R invades the inner space of barrier film DF from gap sometimes.
So, in present embodiment 1, put into part IP1 and be formed as in the bigger base portion of sectional area compared with insertion section
The composition of upper formation insertion section.In this case, as shown in figure 11, it is inserted in the inside of peristome OP1 and puts into part IP1's
Insertion section, and, the bottom surface of the base portion and chip carrying portion TAB1 of putting into part IP1 is close to.Its result, even if putting into part
When producing small gap between insertion section and the peristome OP1 of IP1, base portion is also firmly pressed in chip carrying portion
The back side of TAB1, thus it is possible to prevent resin M R from invading in peristome OP1.That is, in present embodiment 1, part IP1 shape is put into
Become the composition that insertion section is set in the base portion that sectional area compared with insertion section is bigger.So, utilize pedestal by combination
Portion makes resin M R not arrive this point of peristome OP1 and stage portion of being formed between base portion and insertion section is pressed against chip and takes
This point of load portion TAB1, and resin M R can be effectively prevented and invade the inner space of barrier film DF via peristome OP1.
As with upper type, in present embodiment 1, clip across second space by mold UM and lower mold BM and be equipped with
Carry the lead frame LF of the semiconductor chip CHP1 and semiconductor chip CHP2 of framework FB.Then, in case of heating, make
Resin M R flows into this second space, the semiconductor chip CHP1's being formed in the near zone of pad PD1 with the encapsulation of resin M R
Surface, metal wire W1, lead-in wire LD1, metal wire W2, whole of interarea of semiconductor chip CHP2, metal wire W3 and lead-in wire LD2
A part.
Then, as shown in figure 12, in the stage of resin M R hardening, take out from mold UM and lower mold BM and be equipped with half
The lead frame LF of conductor chip CHP1 and semiconductor chip CHP2.Thereby, it is possible to the flow transducer manufactured in present embodiment 1
FS1。
Additionally, in resin-encapsulated operation (injection step) in present embodiment 1, use the high-temperature of more than 80 DEG C
Mold UM and lower mold BM, therefore, heat is passed to note from heated mold UM and lower mold BM at short notice
Enter resin M R to second space.Its result, according to the manufacture method of the flow transducer FS1 in present embodiment 1, it is possible to contracting
The heat hardening time of short resin M R.
Such as, as illustrated by want in the column solved the technical problem that in invention, utilize filling in only enforcement
The gold thread (metal wire) that resin is carried out fixing in the case of, casting resin does not carry out the promotion of the hardening caused based on heating,
So, the time hardening to casting resin is elongated, and the problem that the productivity ratio in the manufacturing process of flow transducer reduces becomes
Obtain significantly.
To this, in the resin-encapsulated operation in present embodiment 1, as it has been described above, because use heated mold
UM and lower mold BM, therefore, it is possible to hot to the transmission of resin M R from heated mold UM and lower mold BM at short notice, energy
Enough shorten the heat hardening time of resin M R.As a result, according to present embodiment 1, it is possible to increase the manufacture of flow transducer FS1
Productivity ratio in operation.
In present embodiment 1, such as, as shown in figure 11, partly lead clipping to be equipped with mold UM and lower mold BM
During the lead frame LF of body chip CHP1, it is provided with frame to being equipped with between the lead frame LF of semiconductor chip CHP1 and mold UM
The example of body FB and elastomer thin film LAF is illustrated.Wherein, the technological thought in present embodiment 1 is not limited to this, example
As, as shown in figure 13, it is also possible to be configured to, do not use elastomer thin film LAF, framework FB is only set, mold UM is pressed
It is being equipped with the lead frame LF of semiconductor chip CHP1.
Even if in this case, being also configured to the coefficient of elasticity the making framework FB elastic system less than semiconductor chip CHP1
Number, thus, even if in the presence of the actual installation deviation of parts, it is also possible to utilize bullet compared with semiconductor chip CHP1
The deformation of the thickness direction (Z-direction) of framework FB that property coefficient is little, relaxes the grip force putting on semiconductor chip CHP1.Its knot
Really, according to present embodiment 1, it is possible to prevent the breakage that the isolating of semiconductor chip CHP1, breach or crackle etc. are representative.
The serviceability ＞ of ＜ framework
Then, having of framework FB employed in the flow transducer FS1 in present embodiment 1 is stated the most in detail
The property used.
(1) Figure 14 is the figure of the example representing the correlation technique not using framework FB to carry out resin-encapsulated.Such as Figure 14
Shown in, in the related, be configured to flow testing division FDU not carried out resin-encapsulated, therefore, mold UM be provided with in
The sealing SL of shape for lugs.And, flow testing division FDU is surrounded by this sealing (encapsulation part) SL, therefore, it is possible to surround
The mode of flow testing division FDU forms the first space S P1 (confined space).In other words, in the related, by being arranged on upper mold
The sealing SL of tool UM surrounds flow testing division FDU, the most not by flow testing division FDU resin-encapsulated.
In the correlation technique such as constituted with upper type, need to arrange close in shape for lugs at mold UM especially
Envelope portion SL is designed (i.e., making an effort).That is, in order to manufacture the flow transducer making flow testing division FDU expose, need to prepare
The special mould UM of specialization in the manufacture of flow transducer.Accordingly, it would be desirable to prepare have sealing SL special on
Mould UM.
To this, in present embodiment 1, such as, as shown in figure 13, semiconductor chip CHP1 configures framework FB, with
The mode being close to this framework FB presses mold UM.Now, in present embodiment 1, semiconductor chip CHP1 configures
In the case of having framework FB, it is possible to the composition of the height of the acquisition framework FB height higher than flow testing division FDU.That is, by making
The height of the framework FB height higher than flow testing division FDU, is necessarily able to ensure that encirclement flow testing division FDU and near zone thereof
The first space S P1 (confined space).Therefore, according to present embodiment 1, it is possible to make flow testing division FDU and near zone thereof
Expose, and the region, surface forming the region semiconductor chip CHP1 as representative with pad is encapsulated.
In other words, in present embodiment 1, examine with built-in (comprising) flow in the peristome OP (FB) being arranged at framework FB
Framework FB is arranged on semiconductor chip CHP1 by the mode of survey portion FDU, and makes the height of framework FB higher than flow testing division FDU
Height.As a result, when being positioned at the surface of mold UM in hole and being smooth, necessarily it is able to ensure that encirclement flow inspection
First space S P1 (confined space) of survey portion FDU.That is, according to present embodiment 1, such as need not as correlation technique
Mold UM arranges the special design of sealing SL, it becomes possible to guarantee that the first space S P1 surrounding flow testing division FDU is (close
Close space).
This means to use present embodiment 1, it is not necessary to use the mold UM of special structure, it is possible to use for right
Entirety in hole carries out the general mold UM (general part) of resin-encapsulated, it is meant that can use as general part
As mold UM manufacture the flow transducer FS1 making flow testing division FDU expose.Therefore, according to present embodiment 1, no
Preparation is needed to descend the special time the special mold UM of the flow transducer of (being specifically designed), it is possible to by extensively
The mold UM of the normally used universal architecture in ground, manufactures the flow transducer making flow testing division FDU expose.
(2) then, in the correlation technique shown in Figure 14, semiconductor chip CHP1 be formed directly into the close of mold UM
Envelope portion SL contacts.Therefore, grip force is delivered to semiconductor chip CHP1 from the sealing SL being formed at mold UM.
Here, such as, in the thickness of each semiconductor chip CHP1, there is dimensional discrepancy, therefore, at semiconductor chip
In the case of the thickness of CHP1 is thicker than average thickness, it is equipped with semiconductor chip when clipping with mold UM and lower mold BM
During the lead frame LF of CHP1, the grip force putting on semiconductor chip CHP1 from sealing SL becomes big, semiconductor chip CHP1 sometimes
Rupture.
To this, in present embodiment 1, do not make mold UM abut with direct semiconductor chip CHP1, make framework FB be situated between
Between mold UM and semiconductor chip CHP1.And, in present embodiment 1, use the coefficient of elasticity ratio of framework FB partly to lead
The material that body chip CHP1 is little.Therefore, framework FB is softer than semiconductor chip CHP1, therefore, mold UM is being pressed into framework
In the case of FB, the size of the thickness direction of framework FB changes, so that absorbing the thickness deviation of semiconductor chip CHP1.
Thus, even if the thickness of semiconductor chip CHP1 is thicker than average thickness, it is also possible to prevent more than needs semiconductor chip
CHP1 applies grip force.As a result, according to present embodiment 1, it is possible to prevent rupturing of semiconductor chip CHP1.
(3) and, in the correlation technique shown in Figure 14, be formed at sealing SL and the semiconductor chip of mold UM
The contact area of CHP1 is little.Therefore, concentrated on sealing SL's and semiconductor chip CHP1 by the grip force pressed from mold UM
Contact area.Therefore, the pressure of the contact portion being applied to sealing SL and semiconductor chip CHP1 becomes big, thus, partly leads
Body chip CHP1 becomes easy breakage.Particularly, in the correlation technique shown in Figure 14, sealing SL and semiconductor chip CHP1
Contact area be formed at and the region of barrier film DF planes overlapping.This means in the region that the thickness of semiconductor chip CHP1 is thin
There is sealing SL and the contact area of semiconductor chip CHP1.The region that the thickness of semiconductor chip CHP1 is thin is easily isolated,
So, in the correlation technique shown in Figure 14, the little pressure collection caused of the contact area of sealing SL and semiconductor chip CHP1
In and contact area be configured to the area coincidence thin with the thickness of semiconductor chip CHP1 when overlooking and cause, quasiconductor
Chip CHP1 is the most damaged.
To this, in present embodiment 1, such as, as shown in figure 13, framework FB and the contact area of semiconductor chip CHP1
Become big compared with the correlation technique shown in Figure 14.Therefore, put on the grip force of framework FB from mold UM, because framework FB and half
The contact area of conductor chip CHP1 is relatively big and is disperseed.Therefore, according to present embodiment 1, it is possible to relax via framework FB from
Mold UM puts on the concentration of local of the grip force of semiconductor chip CHP1, thereby, it is possible to suppression semiconductor chip CHP1's is broken
Damage.Further, such as, as shown in figure 13, framework FB and the contact area of semiconductor chip CHP1 be not heavy with barrier film DF when overlooking
Close.That is, in present embodiment 1, the contact area of framework FB and semiconductor chip CHP1 is not formed in being formed with barrier film DF's
The region that the thickness of semiconductor chip CHP1 is thin, and the region that the thickness that is formed at other semiconductor chip CHP1 is thick.According to
Above situation, according to present embodiment 1, utilizes the folder that the increase of the contact area of framework FB and semiconductor chip CHP1 causes
Power is disperseed this to put cooperative effect of this point of region of the thickness thickness being formed at semiconductor chip CHP1 with contact area, it is possible to have
The breakage of effect ground suppression semiconductor chip CHP1.
(4) it addition, as described above, in the correlation technique shown in Figure 14, sealing SL's and semiconductor chip CHP1
Contact area is less, so the resin being injected into is released into first space S P1 (confined space) of encirclement flow testing division FDU
Danger uprises.
To this, in present embodiment 1, the contact area of framework FB and semiconductor chip CHP1 becomes big, it is possible to fall
The low danger flowing into the first space S P1 (confined space) surrounding flow testing division FDU.
As it has been described above, according to present embodiment 1, by using the height height higher than flow testing division FDU and elastic system
Framework FB of the number coefficient of elasticity less than semiconductor chip CHP1, it is possible to obtain the serviceability shown in above-mentioned (1)～(4).
＜ variation 1 ＞
Then, the variation 1 of the flow transducer FS1 in above-mentioned embodiment 1 is illustrated.At above-mentioned embodiment
In 1, such as, as shown in Figure 4, the example to framework FB with wall portion WP is illustrated, but in this variation 1, to
Framework FB is not provided with the example of wall portion WP and illustrates.
Figure 15 (a) is the plane graph representing the flow transducer FS1 in this variation 1.It addition, Figure 15 (b) is Figure 15 (a)
With line A-A cut off sectional view, Figure 15 (c) be Figure 15 (a) with line B-B cut off sectional view.
As shown in Figure 15 (b) and Figure 15 (c), it is formed without wall portion in framework FB being arranged on semiconductor chip CHP1.
Even if in the case of using framework FB being formed without wall portion in the manner described above, when the height of framework FB is higher than flow testing division
When the height of FDU and the coefficient of elasticity of framework FB are less than the coefficient of elasticity of semiconductor chip CHP1, it is possible to obtain and above-mentioned enforcement
The effect that mode 1 is identical.
Wherein, in framework FB in this variation 1, it is difficult to realize the raising of the positioning precision carried out by wall portion, so
From the viewpoint of being securely fixed framework FB on semiconductor chip CHP1, preferably framework FB in this variation 1 with partly lead
Body chip CHP1 bonds.Now, the bonding of framework FB and semiconductor chip CHP1 such as can use jointing material, it is possible in order to
Framework FB is constituted with the material with adhesive effect.
It addition, such as, in the case of the overall dimensions of framework FB is more than the overall dimensions of semiconductor chip CHP1, sometimes
The position of framework FB is deviateed because of the resin pressure in resin-encapsulated operation (injection step).It is preferred, therefore, that such as framework FB
The overall dimensions overall dimensions less than semiconductor chip CHP1.In other words, it is possible to preferably framework FB is formed as built-in when overlooking
(comprising) in semiconductor chip CHP1 (i.e. by semiconductor chip CHP1 around/comprise).And then, in other words, the profile of framework FB
The overall dimensions being sized to the above perspective plane than semiconductor chip CHP1 is little.By constructed as described above, it is possible to press down
The position deviation of framework FB that the resin pressure in resin-encapsulated operation processed causes.
Figure 16 is the figure in the cross section representing the flow transducer in this variation 1.Understand as shown in figure 16, framework FB
Built-in (comprising) in semiconductor chip CHP1 (by semiconductor chip CHP1 around/comprise).Specifically, in figure 16, in order
In the case of the width of semiconductor chip CHP1 is L1, the width of framework is L2, tie up in all of interface in the pass of L1 ＞ L2
In the case of establishment, framework FB can built-in (comprising) in semiconductor chip CHP1 (by semiconductor chip CHP1 around/comprise).
＜ variation 2 ＞
Then, the variation 2 of the flow transducer FS1 in above-mentioned embodiment 1 is illustrated.At above-mentioned embodiment
In 1, such as, as shown in Fig. 5 (b), Fig. 5 (c), carry via jointing material (adhesive) ADH1 on chip carrying portion TAB1
Semiconductor chip CHP1 on configure framework FB example be illustrated.In this variation 2, at semiconductor chip CHP1 and
The example being inserted with plate-like structure PLT between lead frame LF illustrates.
Figure 17 is the plane graph of the structure representing in this variation 2 flow transducer before resin-encapsulated.Figure 18 is Figure 17
With line A-A cut off sectional view, Figure 19 be Figure 17 with line B-B cut off sectional view.
As shown in figure 17 understand, the flow transducer FS1 in this variation 2, throughout semiconductor chip CHP1 lower floor and
The lower floor of semiconductor chip CHP2 forms plate-like structure PLT.This plate-like structure PLT such as rectangular shaped, has when bowing
Apparent time comprise (around) semiconductor chip CHP1 and the overall dimensions of semiconductor chip CHP2.
Specifically, as shown in Figure 18, Figure 19, comprising chip carrying portion TAB1 and the lead frame of chip carrying portion TAB2
LF upper configuration plate-like structure PLT.This plate-like structure PLT such as uses jointing material ADH3 and lead frame LF to bond, but
It also is able to use creamy material to bond.And, this plate-like structure PLT is equipped with quasiconductor via jointing material ADH1
Chip CHP1, and, it is equipped with semiconductor chip CHP2 via jointing material ADH2.Now, plate-like structure PLT is by metal material
In the case of material is formed, it is also possible to be connected with semiconductor chip CHP1 by metal wire W1, and, by metal wire W2 quasiconductor
It is connected with chip CHP2.Additionally, can also mounting condenser, temperature-sensitive in addition to above-mentioned plate-like structure PLT on lead frame LF
The parts of resistance etc..
Above-mentioned plate-like structure PLT improves mainly as the rigidity of flow sensor FS1, delaying from outside impact
Rush materials serve effect.Further, in the case of plate-like structure PLT is constructed from a material that be electrically conducting, with semiconductor chip CHP1 (weldering
Dish PD1), semiconductor chip CHP2 (pad PD2) electrical connection, it is possible to for the supply of earthing potential (reference potential), it is also possible to
It is grounded the stabilisation of current potential.
Plate-like structure PLT can be by such as PBT resin, ABS fat, PC resin, nylon resin, PS resin, PP resin, fluorine
The thermosetting resin of the thermoplastic resin of resin etc., epoxy resin, phenolic resin, polyurethane resin etc. is constituted.In these feelings
Under condition, plate-like structure PLT can not rushed by from outside mainly as protection semiconductor chip CHP1, semiconductor chip CHP2
The padded coaming of the impact hit and function.
On the other hand, plate-like structure PLT can be by entering the metal material of ferroalloy, aluminium alloy or copper alloy etc.
Row punch process and formed, it is also possible to formed by glass material.Particularly, metal material forming plate-like structure PLT's
In the case of, it is possible to increase the rigidity of flow transducer FS1.Further, make plate-like structure PLT and semiconductor chip CHP1, partly lead
Body chip CHP2 electrically connects, it is also possible to plate-like structure PLT is used for the stabilisation of the supply of ground potential, ground potential.
In flow transducer FS1 in variation 2 constructed as described above, such as, as shown in Figure 17～Figure 19, also
Semiconductor chip CHP1 configures framework FB.And, framework FB be internally formed peristome OP (FB), be formed at quasiconductor
The flow testing division FDU of chip CHP1 exposes from this peristome OP (FB).In this variation 2, by making the height of framework FB
Height higher than flow testing division FDU and make the coefficient of elasticity of framework FB less than semiconductor chip CHP1, it is also possible to obtain with upper
State the effect that embodiment 1 is identical.
(embodiment 2)
In above-mentioned embodiment 1, such as, as shown in Fig. 5 (b), list and there is semiconductor chip CHP1 and quasiconductor
It is illustrated as a example by the flow transducer FS1 of the double-chip structure of chip CHP2, but the technological thought of the present invention is not limited to
This, such as, it is also possible to be applied to the quasiconductor including being integrally formed with flow testing division and control portion (control circuit)
The flow transducer of the single chip architecture of chip.In present embodiment 2, enumerate and the technological thought of the present invention is applied to single
Illustrate in case of the flow transducer of chip architecture.
The actual installation of the flow transducer in ＜ embodiment 2 constitutes ＞
Figure 20 is to represent the figure that the actual installation of the flow transducer FS2 in present embodiment 2 is constituted, and is to represent to use resin
The figure of the composition before encapsulation.Particularly, Figure 20 (a) is the actual installation structure representing the flow transducer FS2 in present embodiment 2
The plane graph become.Figure 20 (b) is the sectional view cut off with line A-A of Figure 20 (a), and Figure 20 (c) is cutting with line B-B of Figure 20 (a)
Disconnected sectional view.It addition, Figure 20 (d) is the plane graph at the back side representing semiconductor chip CHP1.
First, as shown in Figure 20 (a), flow transducer FS2 in present embodiment 2 has and is such as made up of copper product
Lead frame LF.This lead frame LF has chip carrying portion TAB1 in the inside surrounded by the sealing strip DM constituting outer frame body.And,
Chip carrying portion TAB1 is equipped with semiconductor chip CHP1.
Semiconductor chip CHP1 rectangular in shape, is formed with flow testing division FDU in substantially central portion.And, with stream
Amount test section FDU connect distribution WL1A be formed on semiconductor chip CHP1, this distribution WL1A be formed at semiconductor chip
The control portion CU of CHP1 connects.This control portion CU is formed by MISFET (Metal Insulator Semiconductor
Field Effect Transistor) etc. semiconductor element, distribution formed integrated circuit.Specifically, it is formed with composition
CPU1 shown in Fig. 1, input circuit 2, output circuit 3 or, the integrated circuit of memorizer 4 etc..And, control portion CU passes through
Multiple pad PD1, pad PD2 that distribution WL1B is formed with the long limit along semiconductor chip CHP1 are connected.In other words, flow detection
Portion FDU and control portion CU is connected by distribution WL1A, and control portion CU is connected with pad PD1, pad PD2 by distribution WL1B.Weldering
Dish PD1 is connected with the lead-in wire LD1 being formed at lead frame LF via the metal wire W1 such as formed by gold thread.On the other hand, pad
PD2 is connected with the lead-in wire LD2 being formed at lead frame LF via the metal wire W2 such as formed by gold thread.Furthermore, it is possible to partly leading
In the outmost surface (element formation face) of body chip CHP1, with the stress buffer function of binder resin, surface protecting function or
It is formed with polyimide film for the purpose of person's insulation protection function etc..
Lead-in wire LD1 and lead-in wire LD2, to configure in the way of extension in the X-direction orthogonal with the flowing Y-direction of gas, has
Carry out the function of the input and output of external circuit.On the other hand, the Y-direction along lead frame LF is formed with prominent lead-in wire PLD.This is dashed forward
The PLD that goes out to go between is connected with chip carrying portion TAB1, but is not connected with pad PD1, the PD2 being formed at semiconductor chip CHP1.
That is, lead-in wire PLD is highlighted different from lead-in wire LD1, the LD2 that goes between as above-mentioned input and output terminal function.
Here, in present embodiment 2, with the flowing side on the long limit of the semiconductor chip CHP1 of rectangular in shape with gas
The mode parallel to (direction of arrow, Y-direction) is equipped with semiconductor chip CHP1 on chip carrying portion TAB1.And, half
The long edge long side direction of conductor chip CHP1 is configured with multiple pad PD1, PD2.These multiple pad PD1's is respective and multiple
Lead-in wire LD1 connects each via the multiple metal wire W1 to configure in the way of the long limit of semiconductor chip CHP1.Equally, many
Individual pad PD2 each and multiple lead-in wire LD2 each via many to configure in the way of the long limit of semiconductor chip CHP1
Individual metal wire W2 connects.Like this, the long limit along the semiconductor chip CHP1 of rectangular shape configures multiple pad PD1, PD2,
So, compared with the situation configuring multiple pad PD1, PD2 on the short side direction of semiconductor chip CHP1, it is possible to make more
Pad PD1, PD2 are formed at semiconductor chip CHP1.Particularly, in present embodiment 2, semiconductor chip CHP1 not only forms control
Portion CU processed is formed with flow testing division FDU the most in the lump, so, by making multiple pad PD1, PD2 arrange on long side direction, energy
Enough effectively utilize the region on semiconductor chip CHP1.
Further, in present embodiment 2, a part of semiconductor chip CHP1 is formed with framework FB.This framework FB
Such as rectangular shaped, is being internally formed peristome OP (FB).This framework FB is configured to be formed at the master of semiconductor chip CHP1
Flow testing division FDU on face exposes from peristome OP (FB), and is configured to be formed at multiple pads of semiconductor chip CHP1
PD1 exposes the outside to framework FB.
Then, as shown in Figure 20 (b), it is formed with chip carrying portion TAB1 at lead frame LF, at this chip carrying portion TAB1
On be equipped with semiconductor chip CHP1.This semiconductor chip CHP1 is bonded by jointing material ADH1 and chip carrying portion TAB1.
The back side of semiconductor chip CHP1 is formed with barrier film DF (thin plate part), on the surface of the semiconductor chip CHP1 relative with barrier film DF
It is formed with flow testing division FDU.On the other hand, the bottom of the chip carrying portion TAB1 being present in the lower section of barrier film DF is formed out
Oral area OP1.
Further, as shown in Figure 20 (b), semiconductor chip CHP1 surface (above), except flow testing division FDU it
Outward, being also formed with pad PD1, pad PD2, this pad PD1 connects via metal wire W1 and the lead-in wire LD1 being formed at lead frame LF
Connect.Equally, pad PD2 is connected with the lead-in wire LD2 being formed at lead frame LF via metal wire W2.And, semiconductor chip CHP1
On be configured with framework FB.This framework FB is formed with peristome OP (FB), and flow testing division FDU exposes from this peristome OP (FB).
It addition, as shown in Figure 20 (c), lead frame LF is formed with chip carrying portion TAB1 and prominent lead-in wire PLD, chip carrying
Portion TAB1 and prominent lead-in wire PLD forms as one.By jointing material ADH1 and semiconductor core on this chip carrying portion TAB1
Sheet CHP1 bonds.Barrier film DF (thin plate part) it is formed with, at the quasiconductor relative with barrier film DF at the back side of semiconductor chip CHP1
The surface of chip CHP1 is formed with flow testing division FDU.On the other hand, in the chip carrying portion of the lower section being present in barrier film DF
The bottom of TAB1 is formed with peristome OP1.It addition, on the surface of semiconductor chip CHP1 with arranged side by side with flow testing division FDU
Mode is formed with control portion CU.Similarly, semiconductor chip CHP1 configures framework FB.This framework FB is formed with peristome OP
(FB), flow testing division FDU exposes from this peristome OP (FB).
Bonding semiconductor chip CHP1 and chip carrying portion TAB1 jointing material ADH1 can use such as epoxy resin,
The thermoplastic resin of the thermosetting resin of polyurethane resin etc., polyimide resin, acrylic resin etc..
Such as, the bonding of semiconductor chip CHP1 and chip carrying portion TAB1 can the mode as shown in Figure 20 (d) be passed through
Coating jointing material ADH1 is carried out.Figure 20 (d) is the plane graph at the back side representing semiconductor chip CHP1.Such as Figure 20 (d) institute
Show, be formed with barrier film DF at the back side of semiconductor chip CHP1, in the way of surrounding this barrier film DF, apply jointing material ADH1.This
Outward, in Figure 20 (c), expression applies the example of jointing material ADH1 so that barrier film DF to surround the mode as quadrangle form, but
It is not limited to this, for example, it is also possible to apply jointing material in the way of surrounding barrier film DF by the arbitrary shape of elliptical shape etc.
ADH1。
In flow transducer FS2 in present embodiment 2, the flow transducer FS2's before being packaged with resin
Actual installation constitutes and constitutes as described above, below, constitute by the actual installation of the flow transducer FS2 after resin-encapsulated
Illustrate.
Figure 21 is to represent the figure that the actual installation of the flow transducer FS2 in present embodiment 2 is constituted, and is to represent to use resin
The figure of the composition after encapsulation.Particularly, Figure 21 (a) is the actual installation structure representing the flow transducer FS2 in present embodiment 2
The plane graph become.Figure 21 (b) is the sectional view cut off with line A-A of Figure 21 (a), and Figure 21 (c) is cutting with line B-B of Figure 21 (a)
Disconnected sectional view.
In flow transducer FS2 in present embodiment 2, as shown in Figure 21 (a), it is being formed at semiconductor chip CHP1
Flow testing division FDU from the state that the peristome OP (FB) being formed at framework FB exposes, form semiconductor chip CHP1
The structure that a part is covered by resin M R.That is, in present embodiment 2, with the unified encapsulation of resin M R except being formed with flow inspection
The region of survey portion FDU and the region of the semiconductor chip CHP1 outside being equipped with the region of framework FB.
Utilize the encapsulation that this resin M R is carried out, it is possible to mould by the semiconductor core being formed with flow testing division FDU
Carry out under the state that sheet CHP1 is fixing, thus it is possible to the position deviation of suppression semiconductor chip CHP1, further, it is possible to utilize tree
A part for fat MR packaged semiconductor CHP1.It means that according to the flow transducer FS2 in present embodiment 2, it is possible to
The position suppressing each flow transducer FS2 is deviateed, further, it is possible to utilize a part for resin M R packaged semiconductor CHP1,
It is meant to suppress to be formed at the deviation of the position of the flow testing division FDU of semiconductor chip CHP1.
As a result, according to present embodiment 2, it is possible to make the position of flow testing division FDU of the flow of detected gas at each stream
In quantity sensor FS1 unanimously, therefore, it is possible to obtain and can suppress the performance of detected gas flow in each flow transducer FS2
There is the significant effect of deviation.
Then, in the flow transducer FS1 in present embodiment 2, as shown in Figure 21 (a), the flow inspection exposed is surrounded
The height of framework FB in the both sides of survey portion FDU or the height of resin M R (packaging body) are higher than comprising flow testing division FDU's
The height on the surface of semiconductor chip CHP1.That is, the flow testing division FDU exposed is surrounded around by framework FB, and surrounds flow
The height of framework FB of the test section FDU height higher than flow testing division FDU.Use present embodiment constructed as described above
2, it is possible to prevent the parts such as install when assembling of parts from colliding the flow testing division FDU that exposes, thus it is possible to prevent from being formed with stream
The breakage of the semiconductor chip CHP1 of amount test section FDU.In other words, the height of framework FB surrounding flow testing division FDU is higher than
The height of the flow testing division FDU exposed.Therefore, when parts come in contact, first, framework FB high with height contacts, institute
With, it is possible to prevent the exposed surface (XY face) of the lowest semiconductor chip CHP1 comprising flow testing division FDU and component contact,
There is breakage in semiconductor chip CHP1.
Particularly, in present embodiment 2, a part of semiconductor chip CHP1 configures framework FB, this framework FB
Coefficient of elasticity less than the coefficient of elasticity of semiconductor chip CHP1.In other words, framework FB is by hardness ratio semiconductor chip CHP1's
The material that hardness is little is constituted.Therefore, in the case of parts contact with framework FB, it is possible to utilize smaller framework FB of hardness
Deformation absorbs impact, therefore, it is possible to suppress to impact the semiconductor chip CHP1 being passed to be arranged under framework FB, thus,
The breakage of semiconductor chip CHP1 can be effectively prevented.
It addition, in present embodiment 2, in order to prevent resin M R from invading the inner space of barrier film DF, premise is can
Obtain the composition such as applying jointing material ADH1 in the way of surrounding the barrier film DF at the back side being formed at semiconductor chip CHP1.
And, as shown in Figure 21 (b) and Figure 21 (c), it is formed at the core of the lower section being positioned at barrier film DF at the back side of semiconductor chip CHP1
The bottom of sheet equipped section TAB1 is formed with peristome OP1, and, resin M R at the back side covering chip carrying portion TAB1 is arranged
Peristome OP2.
Thus, when using the flow transducer FS2 of present embodiment 2, the inner space of barrier film DF is via being formed at core
The outside sky of the peristome OP1 of the bottom of sheet equipped section TAB1 and the peristome OP2 and flow transducer FS1 being formed at resin M R
Between connect.As a result, it is possible to make the pressure of the pressure of the inner space of barrier film DF and the space outerpace of flow transducer FS2 equal,
Stress can be suppressed to put on barrier film DF.
As with upper type, the flow transducer FS2 in present embodiment 2 is actually installed composition, but at actual stream
In quantity sensor FS2, after encapsulating by resin M R, the sealing strip DM constituting the outer frame body of lead frame LF is removed.Figure 22 is table
Show the plane graph that the actual installation of the flow transducer FS2 after eliminating sealing strip DM is constituted.Understand as shown in figure 22, by cutting
Disconnected sealing strip DM, it is possible to multiple signals of telecommunication are taken out independently from multiple lead-in wire LD1 and lead-in wire LD2.
Manufacture method ＞ of the flow transducer in ＜ present embodiment 2
Flow transducer FS2 in present embodiment 2 is constructed as described above, below, with reference to Figure 23～Figure 26, it is made
The method of making illustrates.Figure 23～Figure 26 represents the manufacturing process in the cross section with line B-B cut-out in Figure 21 (a).
First, as shown in figure 23, the lead frame LF such as formed is prepared by copper product.This lead frame LF is integrally formed with
Chip carrying portion TAB1, prominent lead-in wire PLD, the bottom of chip carrying portion TAB1 is formed with peristome OP1.
Then, as shown in figure 24, chip carrying portion TAB1 carries semiconductor chip CHP1.Specifically, with bonding
Semiconductor chip CHP1 is connected to be formed on the chip carrying portion TAB1 of lead frame LF by materials A DH1.Now, semiconductor core
Sheet CHP1 is mounted on chip carrying portion TAB1 so that is formed at the barrier film DF of semiconductor chip CHP1 and is formed at chip carrying
The peristome OP1 connection of the bottom of portion TAB1.Additionally, formed by common semiconductor fabrication process at semiconductor chip CHP1
Flow testing division FDU, control portion CU, distribution (not shown) and pad (not shown).And, such as, by anisotropic etching,
Barrier film DF is formed in the position at the back side relative with the flow testing division FDU on the surface being formed at semiconductor chip CHP1.
Then, connect (metal wire bonding) with metal wire (not shown) to be formed at the pad of semiconductor chip CHP1 and (do not scheme
Show) and it is formed at the lead-in wire (not shown) of lead frame LF.Metal wire (not shown) is such as formed by gold thread.
Afterwards, semiconductor chip CHP1 carries framework FB.Specifically, framework FB is carried into and is being formed at inside
Built-in (comprising) in peristome OP (FB) have the flow testing division FDU being formed at semiconductor chip CHP1, and outside framework FB
Side is configured with the control portion CU being formed at semiconductor chip CHP1.Thereby, it is possible to make flow testing division FDU and control portion CU dew
Go out, and framework FB is mounted on semiconductor chip CHP1.
Then, as shown in figure 25, across elastomer thin film LAF and second space is formed by mold UM and lower mold BM
(hole) clip and be equipped with the lead frame LF of semiconductor chip CHP1 carrying framework FB, then, in case of heating, make
Resin M R flows into this second space, the semiconductor chip CHP1's being formed in the near zone of control portion CU with the encapsulation of resin M R
Surface, metal wire (not shown), a part of prominent lead-in wire PLD.
In the manufacture method of the flow transducer FS2 in this present embodiment 2, such as, as shown in figure 25, make upper mold
The height that tool UM abuts to height higher than the flow testing division FDU being formed at semiconductor chip CHP1 across elastomer thin film LAF
Framework FB, and, clip the lead frame LF being equipped with semiconductor chip CHP1 with lower mold BM and mold UM.
Thus, according to present embodiment 2, it is ensured that will be formed in the flow testing division FDU of semiconductor chip CHP1 and attached
The first space S P1 (confined space) that near field is surrounded, further, it is possible to encapsulation (closing) is such as with formation region, control portion as generation
The region, surface of the semiconductor chip CHP1 of table.In other words, according to present embodiment 2, it is possible to make to be formed at semiconductor chip
The flow testing division FDU of CHP1 and near zone thereof expose, and encapsulate to control the formation region, the portion semiconductor core as representative
The region, surface of sheet CHP1.
Further, in the manufacture method of the flow transducer FS2 in present embodiment 2, by mold UM and lower mold
When BM clips the lead frame LF being equipped with semiconductor chip CHP1, framework FB and elastomer thin film LAF is made partly to lead between being equipped with
The lead frame LF and mold UM of body chip CHP1 and between.
Thus, even if in the presence of the actual installation deviation of parts, it is also possible to compare quasiconductor by coefficient of elasticity
The deformation of the thickness direction (Z-direction) of framework FB that chip CHP1 is little, relaxes the grip force putting on semiconductor chip CHP1.Knot
Really, according to present embodiment 2, it is possible to prevent the breakage that the isolating of semiconductor chip CHP1, breach or crackle etc. are representative.
Then, as shown in figure 26, in the stage of resin M R hardening, take out from mold UM and lower mold BM and be equipped with half
The lead frame LF of conductor chip CHP1.Thereby, it is possible to the flow transducer FS2 manufactured in present embodiment 1.In the manner described above
In flow transducer FS2 in the present embodiment 2 manufactured, it is possible to obtain the effect identical with above-mentioned embodiment 1.
Above, the invention proposed the present inventor based on this embodiment is specifically illustrated, but the present invention is not
Being limited to above-mentioned embodiment, without departing from carrying out various change in the range of its purport, this is self-evident.
Additionally, the flow transducer of explanation can also be formed with partly leading of flow testing division FDU in above-mentioned embodiment
The part on the surface (above) of body chip CHP1 is formed with polyimide film, silicon nitride film, polysilicon film, TEOS (Si
(OC2H5)4) it is the film of the silicon oxide film etc. of raw material.Thus, at one of the surface of the semiconductor chip CHP1 being close to resin
In Fen, it is possible to realize the raising of bonding strength.
Polyimide film can such as be formed by applying semiconductor chip CHP1, implements photoetching technique as required
Pattern with etching technique.Silicon nitride film, polysilicon film, silicon oxide film can utilize with plasma CVD method, decompression
Chemical vapor deposition method that CVD, atmospheric pressure cvd method etc. are representative, chemical vapor coating (deposition) method, chemical vapor deposition method, physics
Chemical vapour deposition or physical vapor deposition are formed.
These films being formed on semiconductor chip CHP1, it is possible to prevent from being formed at the silicon constituting semiconductor chip CHP1
(Si) thickness of the silicon oxide film on increases, it is possible to increase resin M R and the cohesive of semiconductor chip CHP1.
These film film forming are at least some of the semiconductor chip CHP1's covered by resin M R.
It addition, the thickness of the silicon oxide film etc. with polyimide film, silicon nitride film, polysilicon film, TEOS as raw material sets
Be of about 1 μm～about 120 μm, but be not limited to this thickness, among the region, surface of semiconductor chip CHP1 by resin
The region that MR covers forms these films.
The flow transducer being illustrated in the above-described embodiment is the device of the flow measuring gas, but for
Concrete gaseous species is also not limited, and it can be widely applied for measuring air, LP gas, carbon dioxide (CO2Gas), chlorine
The device of the flow of the arbitrary gas of fluorocarbon gases (Freon gas) etc..
It addition, in the above-described embodiment, the flow transducer of the flow measuring gas is illustrated, but this
The thought of bright technology is not limited to this, and it can be widely applied for the part dew at the semiconductor element making humidity sensor etc.
Carry out under the state gone out in the semiconductor device of resin-encapsulated.
Industrial utilizability
The present invention can be used in the manufacturing industry of the semiconductor device such as manufacturing flow transducer etc. widely.
Description of reference numerals
1 CPU
2 input circuits
3 output circuits
4 memorizeies
ADH1 jointing material (adhesive)
ADH2 jointing material (adhesive)
ADH3 jointing material (adhesive)
BM lower mold
BR1 downstream temperature detecting resistance body
BR2 downstream temperature detecting resistance body
CHP1 semiconductor chip
CHP2 semiconductor chip
CU control portion
DF barrier film
DM sealing strip
FB framework
FDU flow testing division
FP frame portion
FS1 flow transducer
FS2 flow transducer
HCB computer heating control bridge
HR heating resistor
IP1 puts into part (insert die, insertion mould, insert die)
LAF elastomer thin film
LD1 goes between
LD2 goes between
LF lead frame
MR resin
OP1 peristome
OP2 peristome
OP (FB) peristome
PD1 pad (pad)
PD2 pad
PD3 pad
The prominent lead-in wire of PLD
PLT plate-like structure
PS power supply
Q gas flow
R1 resistive element
R2 resistive element
R3 resistive element
R4 resistive element
SL sealing
SP1 the first space
TAB1 chip carrying portion
TAB2 chip carrying portion
Tr transistor
TSB temperature sensor bridge
UM mold
UR1 upstream temperature detecting resistance body
UR2 upstream temperature detecting resistance body
Vref1 reference voltage
Vref2 reference voltage
W1 metal wire
W2 metal wire
W3 metal wire
WL1 distribution
WL1A distribution
WL1B distribution
WP wall portion
Accompanying drawing is explained
Fig. 1
2 input circuits
3 output circuits
4 memorizeies
Claims (13)
1. a flow transducer, it is characterised in that:
There is the first semiconductor chip at the flow testing division of thinner wall section formation be arranged in the first chip carrying portion,
Described flow transducer contains framework, this framework be mounted on described first semiconductor chip and have at least expose described
The peristome of flow testing division, this framework is by the coefficient of elasticity material shape less than the coefficient of elasticity of described first semiconductor chip
Become,
Expose from the described peristome of described framework at the described flow testing division being formed on described first semiconductor chip
Under state, a part for described first semiconductor chip is encapsulated by the packaging body containing resin,
Have the described framework of described peristome have parallel with at least one side of described first semiconductor chip and with
The wall portion that described side is close to,
The frame portion constituting described framework is configured to when overlooking the most overlapping with described thinner wall section.
2. flow transducer as claimed in claim 1, it is characterised in that:
Described first semiconductor chip also has the control circuit portion controlling described flow testing division.
3. flow transducer as claimed in claim 1, it is characterised in that be also equipped with:
Second chip carrying portion；With
It is arranged in the second semiconductor chip in described second chip carrying portion,
Described second semiconductor chip has the control circuit portion controlling described flow testing division,
Described second semiconductor chip is encapsulated by described packaging body.
4. flow transducer as claimed in claim 1, it is characterised in that:
The described framework with described peristome is bonding with described first semiconductor chip.
5. flow transducer as claimed in claim 1, it is characterised in that:
The described framework with described peristome does not bonds with described first semiconductor chip.
6. flow transducer as claimed in claim 1, it is characterised in that:
Polyimide film, silicon nitride film, polysilicon film or oxidation it is formed with at least partially at described first semiconductor chip
Silicon fiml.
7. flow transducer as claimed in claim 1, it is characterised in that:
In the arbitrary section containing the described flow testing division exposed, the height of described framework or described packaging body is higher than containing
The height of described first semiconductor chip of described flow testing division.
8. flow transducer as claimed in claim 1, it is characterised in that:
It is inserted with plate-like structure between described first chip carrying portion and described first semiconductor chip.
9. a flow transducer, it is characterised in that:
There is the first semiconductor chip at the flow testing division of thinner wall section formation be arranged in the first chip carrying portion,
Described flow transducer contains framework, this framework be mounted on described first semiconductor chip and have at least expose described
The peristome of flow testing division, this framework is in the case of being mounted on described first semiconductor chip, and its height is higher than described
The height of flow testing division,
Expose from the described peristome of described framework at the described flow testing division being formed on described first semiconductor chip
Under state, a part for described first semiconductor chip is encapsulated by the packaging body containing resin,
Have the described framework of described peristome have parallel with at least one side of described first semiconductor chip and with
The wall portion that described side is close to,
The frame portion constituting described framework is configured to when overlooking the most overlapping with described thinner wall section.
10. a manufacture method for flow transducer, wherein, described flow transducer is that the flow described in claim 1 or 9 passes
Sensor, the manufacture method of described flow transducer is characterised by, including:
A () prepares the operation with the base material in described first chip carrying portion；
B () prepares the operation of described first semiconductor chip；
C () carries the operation of described first semiconductor chip in described first chip carrying portion；
D () is after described (c) operation, so that described flow testing division is contained in the described peristome being formed at described framework,
At least one side of described wall portion and described first semiconductor chip is close to, and the frame portion constituting described framework is thin with described
The nonoverlapping mode in wall portion, configures the operation of described framework on described first semiconductor chip；With
E (), after described (d) operation, makes the described flow testing division being formed at described first semiconductor chip expose, and profit
With described packaging body by the operation of the part encapsulation of described first semiconductor chip, wherein,
Described (e) operation includes:
(e1) mold and the operation of lower mold are prepared；
(e2) after described (e1) operation, by making the bottom surface of described mold be close to described framework, formed described in surrounding
First space of flow testing division, and utilize described mold and described lower mold to clip across second space to be equipped with described
The operation of the described base material of semiconductor chip；With
(e3) after described (e2) operation, described resin is made to flow into the operation of described second space.
The manufacture method of 11. flow transducers as claimed in claim 10, it is characterised in that:
Described first semiconductor chip also has the control circuit portion controlling described flow testing division.
The manufacture method of 12. flow transducers as claimed in claim 10, it is characterised in that also include:
F () prepared second semiconductor core with the control circuit portion controlling described flow testing division before described (c) operation
The operation of sheet,
The described base material prepared in described (a) operation has the second chip carrying portion,
In described (c) operation, by described second semiconductor-chip-mounting in described second chip carrying portion,
In described (e) operation, described packaging body is utilized to encapsulate described second semiconductor chip,
In described (e2) operation, by making the bottom surface of described mold be close to described framework, formed and surround the inspection of described flow
First space in survey portion, and utilize described mold and described lower mold to clip across described second space to be equipped with described first
Semiconductor chip and the described base material of described second semiconductor chip.
The manufacture method of 13. flow transducers as claimed in claim 10, it is characterised in that:
In described (e2) operation, described mold is made to be close to described framework across elastomer thin film.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012062577A JP5763575B2 (en) | 2012-03-19 | 2012-03-19 | Flow sensor and manufacturing method thereof |
| JP2012-062577 | 2012-03-19 | ||
| CN201280065517.8A CN104024807B (en) | 2012-03-19 | 2012-12-04 | Flow transducer and manufacture method thereof |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201280065517.8A Division CN104024807B (en) | 2012-03-19 | 2012-12-04 | Flow transducer and manufacture method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106092233A true CN106092233A (en) | 2016-11-09 |
| CN106092233B CN106092233B (en) | 2019-01-22 |
Family
ID=49222161
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610390927.XA Expired - Fee Related CN106092233B (en) | 2012-03-19 | 2012-12-04 | Flow sensor and its manufacturing method |
| CN201280065517.8A Expired - Fee Related CN104024807B (en) | 2012-03-19 | 2012-12-04 | Flow transducer and manufacture method thereof |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201280065517.8A Expired - Fee Related CN104024807B (en) | 2012-03-19 | 2012-12-04 | Flow transducer and manufacture method thereof |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5763575B2 (en) |
| CN (2) | CN106092233B (en) |
| DE (1) | DE112012006049T5 (en) |
| WO (1) | WO2013140674A1 (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110073204A (en) * | 2016-12-20 | 2019-07-30 | 日写株式会社 | Gas sensor module and its manufacturing method |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6018903B2 (en) | 2012-12-17 | 2016-11-02 | 日立オートモティブシステムズ株式会社 | Physical quantity sensor |
| JP5916637B2 (en) | 2013-01-11 | 2016-05-11 | 日立オートモティブシステムズ株式会社 | Flow sensor and manufacturing method thereof |
| US10444175B2 (en) | 2015-04-03 | 2019-10-15 | Denso Corporation | Measurement device |
| JP6507804B2 (en) * | 2015-04-03 | 2019-05-08 | 株式会社デンソー | Air flow measuring device |
| JP6905962B2 (en) * | 2018-07-12 | 2021-07-21 | 日立Astemo株式会社 | Flow sensor |
| WO2022208931A1 (en) * | 2021-03-29 | 2022-10-06 | 日立Astemo株式会社 | Flow rate measurement device |
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| CN1058647A (en) * | 1990-08-01 | 1992-02-12 | 涂相征 | A kind of heat-flow sensor of integrated Si-membrane and manufacture method thereof |
| CN1460839A (en) * | 2002-05-10 | 2003-12-10 | 株式会社山武 | Flow sensor and its mfg. method |
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| CN1928508A (en) * | 2005-09-07 | 2007-03-14 | 株式会社日立制作所 | Flow sensor |
| JP2012032247A (en) * | 2010-07-30 | 2012-02-16 | Hitachi Automotive Systems Ltd | Thermal type flowmeter |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0469958A (en) * | 1990-07-10 | 1992-03-05 | Mitsubishi Electric Corp | Semiconductor device |
| JP3882592B2 (en) * | 2001-11-26 | 2007-02-21 | 松下電工株式会社 | Semiconductor ion sensor and manufacturing method thereof |
| JP5012330B2 (en) * | 2007-08-29 | 2012-08-29 | 株式会社デンソー | Manufacturing method of sensor device and sensor device |
| JP5168184B2 (en) * | 2009-02-23 | 2013-03-21 | 株式会社デンソー | Sensor device and manufacturing method thereof |
| JP5208099B2 (en) * | 2009-12-11 | 2013-06-12 | 日立オートモティブシステムズ株式会社 | Flow sensor, method for manufacturing the same, and flow sensor module |
-
2012
- 2012-03-19 JP JP2012062577A patent/JP5763575B2/en not_active Expired - Fee Related
- 2012-12-04 DE DE112012006049.0T patent/DE112012006049T5/en not_active Withdrawn
- 2012-12-04 CN CN201610390927.XA patent/CN106092233B/en not_active Expired - Fee Related
- 2012-12-04 WO PCT/JP2012/081340 patent/WO2013140674A1/en active Application Filing
- 2012-12-04 CN CN201280065517.8A patent/CN104024807B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1058647A (en) * | 1990-08-01 | 1992-02-12 | 涂相征 | A kind of heat-flow sensor of integrated Si-membrane and manufacture method thereof |
| CN1460839A (en) * | 2002-05-10 | 2003-12-10 | 株式会社山武 | Flow sensor and its mfg. method |
| CN1752721A (en) * | 2004-09-24 | 2006-03-29 | 株式会社电装 | Thermal-type flow rate sensor and manufacturing method thereof |
| CN1928508A (en) * | 2005-09-07 | 2007-03-14 | 株式会社日立制作所 | Flow sensor |
| JP2012032247A (en) * | 2010-07-30 | 2012-02-16 | Hitachi Automotive Systems Ltd | Thermal type flowmeter |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110073204A (en) * | 2016-12-20 | 2019-07-30 | 日写株式会社 | Gas sensor module and its manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP5763575B2 (en) | 2015-08-12 |
| CN106092233B (en) | 2019-01-22 |
| WO2013140674A1 (en) | 2013-09-26 |
| JP2013195231A (en) | 2013-09-30 |
| DE112012006049T5 (en) | 2014-12-18 |
| CN104024807A (en) | 2014-09-03 |
| CN104024807B (en) | 2016-07-06 |
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