CN104024807B - Flow transducer and manufacture method thereof - Google Patents
Flow transducer and manufacture method thereof Download PDFInfo
- Publication number
- CN104024807B CN104024807B CN201280065517.8A CN201280065517A CN104024807B CN 104024807 B CN104024807 B CN 104024807B CN 201280065517 A CN201280065517 A CN 201280065517A CN 104024807 B CN104024807 B CN 104024807B
- Authority
- CN
- China
- Prior art keywords
- semiconductor chip
- framework
- flow
- testing division
- chip chp1
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 53
- 238000000034 method Methods 0.000 title claims description 52
- 239000004065 semiconductor Substances 0.000 claims abstract description 452
- 238000012360 testing method Methods 0.000 claims abstract description 151
- 229920001971 elastomer Polymers 0.000 claims abstract description 28
- 239000000806 elastomer Substances 0.000 claims abstract description 28
- 239000010409 thin film Substances 0.000 claims abstract description 27
- 229920005989 resin Polymers 0.000 claims description 109
- 239000011347 resin Substances 0.000 claims description 109
- 239000010408 film Substances 0.000 claims description 78
- 239000000463 material Substances 0.000 claims description 62
- 230000004888 barrier function Effects 0.000 claims description 59
- 230000015572 biosynthetic process Effects 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 19
- 238000004806 packaging method and process Methods 0.000 claims description 13
- 238000005538 encapsulation Methods 0.000 claims description 11
- 229920001721 polyimide Polymers 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 6
- 229920005591 polysilicon Polymers 0.000 claims description 6
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 abstract description 8
- 230000004075 alteration Effects 0.000 abstract description 6
- 102100031277 Calcineurin B homologous protein 1 Human genes 0.000 description 307
- 241000839426 Chlamydia virus Chp1 Species 0.000 description 307
- JPKJQBJPBRLVTM-OSLIGDBKSA-N (2s)-2-amino-n-[(2s,3r)-3-hydroxy-1-[[(2s)-1-[[(2s)-1-[[(2s)-1-[[(2r)-1-(1h-indol-3-yl)-3-oxopropan-2-yl]amino]-1-oxo-3-phenylpropan-2-yl]amino]-1-oxo-3-phenylpropan-2-yl]amino]-1-oxo-3-phenylpropan-2-yl]amino]-1-oxobutan-2-yl]-6-iminohexanamide Chemical compound C([C@H](NC(=O)[C@@H](NC(=O)[C@@H](N)CCCC=N)[C@H](O)C)C(=O)N[C@@H](CC=1C=CC=CC=1)C(=O)N[C@@H](CC=1C=CC=CC=1)C(=O)N[C@H](CC=1C2=CC=CC=C2NC=1)C=O)C1=CC=CC=C1 JPKJQBJPBRLVTM-OSLIGDBKSA-N 0.000 description 304
- 101000777252 Homo sapiens Calcineurin B homologous protein 1 Proteins 0.000 description 303
- 101000943802 Homo sapiens Cysteine and histidine-rich domain-containing protein 1 Proteins 0.000 description 303
- 238000010438 heat treatment Methods 0.000 description 88
- 102100021228 TGF-beta-activated kinase 1 and MAP3K7-binding protein 1 Human genes 0.000 description 51
- 101000674731 Homo sapiens TGF-beta-activated kinase 1 and MAP3K7-binding protein 1 Proteins 0.000 description 49
- 229910052751 metal Inorganic materials 0.000 description 43
- 239000002184 metal Substances 0.000 description 43
- 238000009434 installation Methods 0.000 description 37
- 239000000203 mixture Substances 0.000 description 37
- 102100031272 Calcineurin B homologous protein 2 Human genes 0.000 description 36
- 241001510512 Chlamydia phage 2 Species 0.000 description 36
- 101000777239 Homo sapiens Calcineurin B homologous protein 2 Proteins 0.000 description 36
- 238000007789 sealing Methods 0.000 description 29
- 238000011144 upstream manufacturing Methods 0.000 description 24
- FQVLRGLGWNWPSS-BXBUPLCLSA-N (4r,7s,10s,13s,16r)-16-acetamido-13-(1h-imidazol-5-ylmethyl)-10-methyl-6,9,12,15-tetraoxo-7-propan-2-yl-1,2-dithia-5,8,11,14-tetrazacycloheptadecane-4-carboxamide Chemical compound N1C(=O)[C@@H](NC(C)=O)CSSC[C@@H](C(N)=O)NC(=O)[C@H](C(C)C)NC(=O)[C@H](C)NC(=O)[C@@H]1CC1=CN=CN1 FQVLRGLGWNWPSS-BXBUPLCLSA-N 0.000 description 23
- 102100034035 Alcohol dehydrogenase 1A Human genes 0.000 description 23
- 101000892220 Geobacillus thermodenitrificans (strain NG80-2) Long-chain-alcohol dehydrogenase 1 Proteins 0.000 description 23
- 101000780443 Homo sapiens Alcohol dehydrogenase 1A Proteins 0.000 description 23
- 238000009826 distribution Methods 0.000 description 20
- 238000003780 insertion Methods 0.000 description 18
- 230000037431 insertion Effects 0.000 description 18
- 238000005266 casting Methods 0.000 description 16
- 241000218202 Coptis Species 0.000 description 14
- 235000002991 Coptis groenlandica Nutrition 0.000 description 14
- 230000000694 effects Effects 0.000 description 10
- 102100021227 TGF-beta-activated kinase 1 and MAP3K7-binding protein 2 Human genes 0.000 description 9
- 101000674728 Homo sapiens TGF-beta-activated kinase 1 and MAP3K7-binding protein 2 Proteins 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 7
- 238000002347 injection Methods 0.000 description 7
- 239000007924 injection Substances 0.000 description 7
- 239000003822 epoxy resin Substances 0.000 description 6
- 229920000647 polyepoxide Polymers 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 229920005992 thermoplastic resin Polymers 0.000 description 6
- 229920001187 thermosetting polymer Polymers 0.000 description 6
- 102100034044 All-trans-retinol dehydrogenase [NAD(+)] ADH1B Human genes 0.000 description 5
- 101710193111 All-trans-retinol dehydrogenase [NAD(+)] ADH4 Proteins 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 230000001070 adhesive effect Effects 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000000446 fuel Substances 0.000 description 5
- 239000005011 phenolic resin Substances 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 208000037656 Respiratory Sounds Diseases 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 238000002485 combustion reaction Methods 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 238000011049 filling Methods 0.000 description 4
- 238000011068 loading method Methods 0.000 description 4
- 239000007769 metal material Substances 0.000 description 4
- -1 platina) etc. Inorganic materials 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 229920005749 polyurethane resin Polymers 0.000 description 4
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 3
- 239000004925 Acrylic resin Substances 0.000 description 3
- 230000009471 action Effects 0.000 description 3
- 238000012937 correction Methods 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 229920001568 phenolic resin Polymers 0.000 description 3
- 239000004417 polycarbonate Substances 0.000 description 3
- 239000009719 polyimide resin Substances 0.000 description 3
- 230000001629 suppression Effects 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 102100034042 Alcohol dehydrogenase 1C Human genes 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 101000796894 Coturnix japonica Alcohol dehydrogenase 1 Proteins 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 101000780463 Homo sapiens Alcohol dehydrogenase 1C Proteins 0.000 description 2
- 239000004677 Nylon Substances 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 229910002092 carbon dioxide Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000013536 elastomeric material Substances 0.000 description 2
- 238000001746 injection moulding Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229920001778 nylon Polymers 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 description 2
- 239000005020 polyethylene terephthalate Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N Acrylic acid Chemical compound OC(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910001021 Ferroalloy Inorganic materials 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 230000005483 Hooke's law Effects 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000002079 cooperative effect Effects 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 210000000569 greater omentum Anatomy 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000002372 labelling Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000012766 organic filler Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000012994 photoredox catalyst Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- NIFIFKQPDTWWGU-UHFFFAOYSA-N pyrite Chemical compound [Fe+2].[S-][S-] NIFIFKQPDTWWGU-UHFFFAOYSA-N 0.000 description 1
- 239000011028 pyrite Substances 0.000 description 1
- 229910052683 pyrite Inorganic materials 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 235000012222 talc Nutrition 0.000 description 1
- 239000000454 talc Substances 0.000 description 1
- 229910052623 talc Inorganic materials 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
- G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
- G01F1/684—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow
- G01F1/6845—Micromachined devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
- G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
- G01F1/684—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow
- G01F1/688—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow using a particular type of heating, cooling or sensing element
- G01F1/69—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow using a particular type of heating, cooling or sensing element of resistive type
- G01F1/692—Thin-film arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Physics & Mathematics (AREA)
- Fluid Mechanics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Volume Flow (AREA)
Abstract
The present invention provides a kind of aberrations in property that can suppress each flow transducer to improve the technology of (also comprise and improve reliability to realize the situation that performance improves) to realize performance.Such as, when clipping, by mold (UM) and lower mold (BM), lead frame (LF) being equipped with semiconductor chip (CHP1), it is equipped with between the lead frame (LF) of semiconductor chip (CHP1) and mold (UM) and is provided with framework (FB) and elastomer thin film (LAF).Now, the height of framework (FB) is higher than coefficient of elasticity less than semiconductor chip (CHP1) of the coefficient of elasticity of the height of flow testing division (FDU) and framework (FB).
Description
Technical field
The present invention relates to flow transducer and manufacturing technology thereof, particularly relate to the effective technology of the structure suitable in flow transducer.
Background technology
In Japanese Unexamined Patent Publication 2004-74713 publication (patent documentation 1), the manufacture method as quasiconductor housing discloses the mould hold assembly being provided by divergence type thin web, the method flowing into resin.
Additionally, in Japanese Unexamined Patent Publication 2011-122984 publication (patent documentation 2), about the flow transducer that the flow testing division part making gas (air) flow is exposed, record mould and use by the manufacture method of the flow transducer putting into part or elastomer thin film of spring-loaded.
Prior art literature
Patent documentation
Patent documentation 1: Japanese Unexamined Patent Publication 2004-74713 publication
Patent documentation 2: Japanese Unexamined Patent Publication 2011-122984 publication
Summary of the invention
Invention is wanted to solve the technical problem that
Such as, currently in the internal combustion engine of automobile etc., it is provided with electronic control fuel injection device.This electronic control fuel injection device has by suitably the amount of the gas (air) and fuel that flow into internal combustion engine being adjusted, and makes the effect that internal combustion engine operates effectively.Therefore, in electronic control fuel injection device, it is necessary to the correct gas (air) grasping inflow internal combustion engine.Therefore, electronic control fuel injection device is provided with the flow transducer (air flow sensor) measuring gas (air) flow.
In flow transducer, especially with semiconductor microactuator process technology manufacture flow transducer because can cut down cost and can with low driven by power, so being concerned.This flow transducer, for example with following structure: form the barrier film (diaphragm) (thin plate part) utilizing anisotropic etching and formed at the back side of the Semiconductor substrate formed by silicon, be formed with the flow testing division formed by heating resistor and temperature detecting resistance body on the surface of the Semiconductor substrate relative with this barrier film.
In actual flow transducer, for instance, except being formed with the first semiconductor chip of barrier film and flow testing division, also there is the second semiconductor chip being formed with the control circuit portion controlling flow testing division.Above-mentioned first semiconductor chip and the second semiconductor chip are such as mounted on substrate, electrically connect with the distribution (terminal) formed on substrate.Specifically, such as, first semiconductor chip is connected with the distribution formed at substrate by the metal wire formed by gold thread (spun gold), second semiconductor chip uses and forms the concavo-convex electrode (bumpelectrode) at the second semiconductor chip, is connected with the distribution formed at substrate.So, it is mounted in the first semiconductor chip on substrate and the second semiconductor chip to connect via the wired electric formed at substrate.As a result, it is possible to the flow testing division formed at the first semiconductor chip is controlled in the control circuit portion of the second semiconductor chip by being formed, constitute flow transducer.
Now, connect the gold thread (spun gold, metal wire) of the first semiconductor chip and substrate to prevent the contact etc. because deformation causes, generally fixed by casting resin (pottingresin, joint filling resin, sealing resin).That is, gold thread (metal wire) is covered by casting resin and fixes, and utilizes this casting resin, protects gold thread (metal wire).On the other hand, the first semiconductor chip and the second semiconductor chip that constitute flow transducer are not generally filled with resin-encapsulated.In other words, in common flow transducer, adopt only gold thread (metal wire) to be filled with the structure that resin covers.
At this, gold thread (metal wire) utilize that casting resin carries out fixing, it is not when using mould etc. will to carry out fixing for the first semiconductor chip, so it some times happens that the problem that deviates from loading position of the first semiconductor chip caused because of the contraction of casting resin.Further, because casting resin is formed by dripping, so, there is the problem that the dimensional accuracy of casting resin is low.Its result, in each flow transducer, forms the loading position at the first semiconductor chip of flow testing division and produces deviation and the forming position of casting resin also delicate difference, and the detection performance of each flow transducer produces deviation.Therefore, in order to suppress the aberrations in property of each flow transducer, it is necessary to each flow transducer to be carried out the correction of detection performance, it is necessary to add the performance correction operation in the manufacturing process carrying out flow transducer.Especially, when performance correction operation becomes longer, there is also the productivity ratio in the manufacturing process of flow transducer and reduce, the problem of the cost increase of flow transducer.Further, because casting resin does not carry out the promotion of hardening utilizing heating to carry out, institute so that the time till casting resin hardening longer, productivity ratio reduction in the manufacturing process of flow transducer.
It is an object of the invention to provide a kind of aberrations in property that can suppress each flow transducer thus realizing performance to improve the technology of (also comprise and improve reliability thus realizing the situation that performance improves).
The above-mentioned purpose of the present invention and other purpose and new feature, it is possible to become clear and definite according to the record of this specification and accompanying drawing.
For solving the technical scheme of technical problem
When briefly describing the summary of representational content among invention disclosed in the present application, as described below.
Flow transducer in the embodiment represented possesses: (a) first chip carrying portion；(b) being arranged in the first semiconductor chip in above-mentioned first chip carrying portion, above-mentioned first semiconductor chip has: (b1) forms the flow testing division on the interarea of the first Semiconductor substrate；(b2) above-mentioned first Semiconductor substrate with the barrier film formed in the back side of above-mentioned interarea opposition side, in the region relative with above-mentioned flow testing division.At this, above-mentioned flow transducer contains framework, and this framework is mounted on above-mentioned first semiconductor chip and has the peristome at least exposing above-mentioned flow testing division, and this framework is formed by the material that coefficient of elasticity is less than the coefficient of elasticity of above-mentioned first semiconductor chip.And, when the above-mentioned flow testing division being formed on above-mentioned first semiconductor chip exposes from the above-mentioned peristome of above-mentioned framework, a part for above-mentioned first semiconductor chip is encapsulated by the packaging body containing resin.
It addition, the manufacture method of the flow transducer in the embodiment represented is the manufacture method of the flow transducer with said structure.The manufacture method of above-mentioned flow transducer includes: (a) prepares the operation with the base material in above-mentioned first chip carrying portion；B () prepares the operation of above-mentioned first semiconductor chip；C () carries the operation of above-mentioned first semiconductor chip in above-mentioned first chip carrying portion.Then, also include: (d), after above-mentioned (c) operation, to make above-mentioned flow testing division be contained in formation in the way of the above-mentioned peristome of above-mentioned framework, configures the operation of above-mentioned framework on above-mentioned first semiconductor chip；(e) after above-mentioned (d) operation, make formation expose at the above-mentioned flow testing division of above-mentioned first semiconductor chip, and utilize above-mentioned packaging body by the operation of the part encapsulation of above-mentioned first semiconductor chip.At this, above-mentioned (e) operation includes: (e1) prepares the operation of mold and lower mold；(e2) after above-mentioned (e1) operation, by making the bottom surface of above-mentioned mold be close to above-mentioned framework, form the first space surrounding above-mentioned flow testing division, and utilize above-mentioned mold and above-mentioned lower mold to clip the operation of the above-mentioned base material being equipped with above-mentioned first semiconductor chip across second space；(e3) after above-mentioned (e2) operation, above-mentioned resin is made to flow into the operation of above-mentioned second space.
Invention effect
If it is during the effect that simple declaration obtains among invention disclosed herein, by the invention of representative, as described below.
The aberrations in property of each flow transducer can be suppressed and realize the raising of performance.
Accompanying drawing explanation
Fig. 1 indicates that the circuit block diagram that the circuit of the flow transducer in embodiment 1 is constituted.
Fig. 2 indicates that the plane graph that the layout of the semiconductor chip of a part for the flow transducer constituted in embodiment 1 is constituted.
Fig. 3 indicates that the figure that the actual installation of the flow transducer in embodiment 1 is constituted, expression resin be packaged before the figure of composition.Particularly, a () indicates that the plane graph that the actual installation of the flow transducer in embodiment 1 is constituted, b () is the sectional view cut off with line A-A of (a), (c) indicates that the plane graph at the back side of semiconductor chip.
Fig. 4 (a) indicates that the plane graph of the composition of framework, and (b) is the sectional view cut off with line A-A of (a), and (c) is the sectional view cut off with line B-B of (a).
Fig. 5 indicates that the figure that the actual installation of the flow transducer in embodiment 1 is constituted, expression resin be packaged after the figure of composition.Particularly, a () indicates that the plane graph that the actual installation of the flow transducer in embodiment 1 is constituted, b () is the sectional view cut off with line A-A of (a), (c) is the sectional view cut off with line B-B of (a).
Fig. 6 indicates that the plane graph that the actual installation of the flow transducer after being removed by sealing strip is constituted.
Fig. 7 indicates that the sectional view of the manufacturing process of the flow transducer in embodiment 1.
Fig. 8 indicates that the sectional view of the then manufacturing process of the flow transducer of Fig. 7.
Fig. 9 indicates that the sectional view of the then manufacturing process of the flow transducer of Fig. 8.
Figure 10 indicates that the sectional view of the then manufacturing process of the flow transducer of Fig. 9.
Figure 11 indicates that the sectional view of the then manufacturing process of the flow transducer of Figure 10.
Figure 12 indicates that the sectional view of the then manufacturing process of the flow transducer of Figure 11.
Figure 13 indicate that do not use elastomer thin film, only across the sectional view of framework, the example that mold is pressed into the lead frame being equipped with semiconductor chip.
Figure 14 indicates that the figure of an example of the correlation technique not using framework to carry out resin-encapsulated.
Figure 15 (a) indicates that the plane graph of the flow transducer in variation 1, and (b) is the sectional view cut off with line A-A of (a), and (c) is the sectional view cut off with line B-B of (a).
Figure 16 indicates that the figure in a cross section of the flow transducer in variation 1.
Figure 17 indicates that the plane graph of the structure of the flow transducer in variation 2, before resin-encapsulated.
Figure 18 is the sectional view cut off with line A-A of Figure 17.
Figure 19 is the sectional view cut off with line B-B of Figure 17.
Figure 20 indicates that the figure that the actual installation of the flow transducer in embodiment 2 is constituted, expression resin be packaged before the figure of composition.Particularly, a () indicates that the plane graph that the actual installation of the flow transducer in embodiment 2 is constituted, b () is the sectional view cut off with line A-A of (a), c () is the sectional view cut off with line B-B of (a), (d) indicates that the plane graph at the back side of semiconductor chip.
Figure 21 indicates that the figure that the actual installation of the flow transducer in embodiment 2 is constituted, expression resin be packaged after the figure of composition.Particularly, a () indicates that the plane graph that the actual installation of the flow transducer in embodiment 2 is constituted, b () is the sectional view cut off with line A-A of (a), (c) is the sectional view cut off with line B-B of (a).
Figure 22 indicates that the plane graph that the actual installation of the flow transducer after being removed by sealing strip is constituted.
Figure 23 indicates that the sectional view of the manufacturing process of the flow transducer in embodiment 2.
Figure 24 indicates that the sectional view of the then manufacturing process of the flow transducer of Figure 23.
Figure 25 indicates that the sectional view of the then manufacturing process of the flow transducer of Figure 24.
Figure 26 indicates that the sectional view of the then manufacturing process of the flow transducer of Figure 25.
Detailed description of the invention
In the following embodiments, multiple part it is being divided into whenever necessary or embodiment illustrates in order to convenient, but it is in addition to outside situation about explicitly indicating that especially, they not have no bearing on each other, and a side has the relation of the some or all of variation of the opposing party, detailed, supplementary notes etc..
Additionally, in the following embodiments, when (including number, numerical value, amount, scope etc.) such as the quantity mentioning key element, situation except expressing especially and principle are defined as clearly except certain amount of situation etc., it is not limited to specific quantity, it is possible to for specific quantity above and below.
Further, in the following embodiments, except being considered necessary situation clearly in situation about expressing especially and principle, not necessarily necessary, this is self-evident for this element (also comprising key element step etc.).
Equally, in the following embodiments, when mentioning the shape of element etc., position relationship etc., the situation except expressing especially and principle are considered clearly except really not so situation etc., also comprise substantially approximate or similar with its shape etc. situation.This is also identical with scope for above-mentioned numerical value.
It addition, in being used for all figure that embodiment is illustrated, same parts is marked in principle identical accompanying drawing labelling, omits its repeat specification.Wherein, for accompanying drawing easy to understand, in plan view, advantage mark shade.
(embodiment 1)
The circuit of < flow transducer constitutes >
First, illustrate that the circuit of flow transducer is constituted.Fig. 1 indicates that the circuit block diagram that the circuit of the flow transducer in present embodiment 1 is constituted.In Fig. 1, flow transducer in present embodiment 1, first, there is the CPU (CentralProcessingUnit) 1 for controlling flow transducer, further, have for the input circuit 2 of this CPU1 input input signal with for exporting the output circuit 3 of the output signal from CPU1.And, flow transducer is provided with the memorizer 4, CPU1 of storage data and accesses memorizer 4, it is possible to reference to the data being stored in memorizer 4.
Then, CPU1 is connected via the base stage of output circuit 3 with transistor Tr.And, the colelctor electrode of this transistor Tr is connected with power ps, and the emission electrode of transistor Tr is connected with ground (GND) via heating resistor HR.Therefore, transistor Tr is by CPU1 control.In other words, the base stage of transistor Tr is connected with CPU1 via output circuit 3, so, the output signal from CPU1 is transfused to the base stage of transistor Tr.
As a result, utilize the output signal (control signal) from CPU1, control the electric current of flowing in transistor Tr.When the electric current owing to flowing in transistor Tr from the output signal of CPU1 becomes big, the electric current supplied from power ps to heating resistor HR becomes big, and the heating quantitative change of heating resistor HR is big.
On the other hand, when the electric current owing to flowing in transistor Tr from the output signal of CPU1 tails off, the electric current to heating resistor HR supply tails off, and the heat that adds of heating resistor HR reduces.
So it can be seen that in flow transducer in present embodiment 1, CPU1 control the magnitude of current of flowing in heating resistor HR, thus, the caloric value from heating resistor HR is controlled by CPU1.
Then, in the flow transducer in present embodiment 1, CPU1 control the electric current of flowing in heating resistor HR, be therefore provided with computer heating control bridge HCB.This computer heating control bridge HCB detects from the heating resistor HR caloric value distributed, and this testing result is exported input circuit 2.Its result, CPU1 can input the testing result from computer heating control bridge HCB, in view of the situation, controls the electric current of flowing in transistor Tr.
Specifically, as it is shown in figure 1, computer heating control bridge HCB has the resistive element R1～resistive element R4 constituting bridge between reference voltage Vref1 and ground (GND).In the computer heating control bridge HCB such as constituted with upper type, gas after being heated by heating resistor HR is than suction temperature only certain uniform temperature high (Δ T, such as, 100 DEG C) when, set the resistance value of resistive element R1～resistive element R4 in the mode that the potential difference of the current potential of node A and the current potential of node B is 0V.That is, the resistive element R1～resistive element R4 of computer heating control bridge HCB is constituted side by side to be constituted bridge in the way of connection between reference voltage Vref1 and ground (GND) by resistive element R1 and the resistive element R3 member of formation being connected in series with by resistive element R2 and the resistive element R4 member of formation being connected in series.And, the junction point of resistive element R1 and resistive element R3 is node A, and the junction point of resistive element R2 and resistive element R4 is node B.
Now, heating resistor HR the gas after heating contacts with the resistive element R1 constituting computer heating control bridge HCB.Accordingly, because from the caloric value of heating resistor HR, the resistance value constituting the resistive element R1 of computer heating control bridge HCB is main changing.So, when the resistance value of resistive element R1 changes, the potential difference between node A and node B changes.The potential difference of this node A and node B is transfused to CPU1 via input circuit 2, so, CPU1 controls the electric current of flowing in transistor Tr based on the potential difference of node A and node B.
Specifically, CPU1 controls the electric current of flowing in transistor Tr so that the potential difference of node A and node B becomes 0V, controls the caloric value from heating resistor HR.In other words, known: in the flow transducer in present embodiment 1, CPU1 carries out feedback control based on the output of computer heating control bridge HCB, by the certain value than suction temperature only certain uniform temperature high (Δ T, such as, 100 DEG C) of the gas after being heated by heating resistor HR.
Then, the flow transducer in present embodiment 1 has the temperature sensor bridge TSB of the flow for detected gas.This temperature sensor bridge TSB has 4 the temperature detecting resistance bodies constituting bridge between reference voltage Vref2 and ground (GND).These 4 temperature detecting resistance bodies are made up of 2 upstreams temperature detecting resistance body UR1, UR2 and 2 downstreams temperature detecting resistance body BR1, BR2.
That is, the direction of the arrow of Fig. 1 represents the direction that gas flows, and the upstream side in the direction that this gas flows is provided with upstream temperature detecting resistance body UR1, UR2, is provided with downstream temperature detecting resistance body BR1, BR2 in downstream.Temperature detecting resistance body UR1, UR2 are configured to the distance of heating resistor HR identical with downstream temperature detecting resistance body BR1, BR2 in these upstreams.
In temperature sensor bridge TSB, upstream temperature detecting resistance body UR1 and downstream temperature detecting resistance body BR1 is connected in series between reference voltage Vref2 and ground (GND), and the junction point of this upstream temperature detecting resistance body UR1 and downstream temperature detecting resistance body BR1 is node C.
On the other hand, upstream temperature detecting resistance body UR2 and downstream temperature detecting resistance body BR2 is connected in series between ground (GND) and reference voltage Vref2, and the junction point of this upstream temperature detecting resistance body UR2 and downstream temperature detecting resistance body BR2 is node D.And, the current potential of node C and the current potential of node D are transfused to CPU1 via input circuit 2.And, set each resistance value of upstream temperature detecting resistance body UR1, UR2 and downstream temperature detecting resistance body BR1, BR2 so that when the flow of the gas flowed in the direction of the arrow is the windless condition of zero, the poor current potential of the current potential of node C and the current potential of node D becomes 0V.
Specifically, upstream temperature detecting resistance body UR1, UR2 and downstream temperature detecting resistance body BR1, BR2 are configured to that the distance from heating resistor HR is equal and resistance value is also equal.Therefore, it is known that in temperature sensor bridge TSB, with the caloric value of heating resistor HR without sight, when for windless condition, the poor current potential of node C and node D is 0V.
The action > of < flow transducer
Flow transducer in present embodiment 1 is constructed as described above, below, with reference to Fig. 1, its action is illustrated.First, CPU1, via the output circuit 3 base stage output signal output (control signal) to transistor Tr, makes current flow through transistor Tr.So, electric current is from the power ps stream being connected with the colelctor electrode of transistor Tr to the heating resistor HR being connected with the emission electrode of transistor Tr.Therefore, heating resistor HR heating.And, the resistive element R1 constituting computer heating control bridge HCB is heated by the gas after the heating heating of origin spontaneous heating resistive element HR.
Now, each resistance value of resistive element R1～R4 is set, when the gas heated by heating resistor HR is only above uniform temperature (such as, 100 DEG C) so that the poor current potential of the node A and node B of computer heating control bridge HCB is 0V.Therefore, such as the gas after being heated by heating resistor HR is only above uniform temperature (such as, 100 DEG C) when, the poor current potential between the node A and node B of computer heating control bridge HCB is 0V, and this difference current potential (0V) is transfused to CPU1 via input circuit 2.And, the base stage of transistor Tr is exported the output signal (control signal) of the magnitude of current for maintaining the statusquo by the CPU1 that poor current potential is 0V identifying self-heating control bridge HCB via output circuit 3.
On the other hand, heating resistor HR when gas deviation uniform temperature (such as, 100 DEG C) after heating, producing between the node A and node B of computer heating control bridge HCB is not the poor current potential of 0V, and this difference current potential is transfused to CPU1 via input circuit 2.And, identify the CPU1 producing the poor current potential from computer heating control bridge HCB becomes the output signal (control signal) of 0V via output circuit 3 to the base stage output difference current potential of transistor Tr.
Such as, producing the gas after being heated by heating resistor HR higher than uniform temperature (such as, 100 DEG C) the poor current potential in direction when, the base stage of transistor Tr is exported the control signal (output signal) that the electric current of flowing reduces in transistor Tr by CPU1.To this, producing the gas after being heated by heating resistor HR lower than uniform temperature (such as, 100 DEG C) the poor current potential in direction when, the base stage of transistor Tr is exported the control signal (output signal) that the electric current of flowing increases in transistor Tr by CPU1.
As with upper type, CPU1 carries out feedback control based on the output signal from computer heating control bridge HCB so that the poor current potential between the node A and node B of computer heating control bridge HCB becomes 0V (poised state).Thus, it is known that in the flow transducer in present embodiment 1, heating resistor HR the gas after heating is controlled as uniform temperature.
Then, the action of the flow of the gas in the flow transducer measured in present embodiment 1 is illustrated.First, the situation of windless condition is illustrated.Set each resistance value of upstream temperature detecting resistance body UR1, UR2 and downstream temperature detecting resistance body BR1, BR2, when making the windless condition that flow is zero of flowing gas in the direction of the arrow, the poor current potential of the current potential of the node C of temperature sensor bridge TSB and the current potential of node D is 0V.
Specifically, upstream temperature detecting resistance body UR1, UR2 and downstream temperature detecting resistance body BR1, BR2 are configured to that the distance from heating resistor HR is equal and resistance value is also equal.Therefore, in temperature sensor bridge TSB, unrelated with the caloric value of heating resistor HR, when for windless condition, the poor current potential of node C and node D becomes 0V, and this difference current potential (0V) is transfused to CPU1 via input circuit 2.And, identify and identify that the flow of the gas flowed in the direction of the arrow is zero from the CPU1 that poor current potential is 0V of temperature sensor bridge TSB, represent, via the output circuit 3 flow transducer output from present embodiment 1, the output signal that gas flow Q is zero.
Then, it is considered to the situation that gas flows in the direction of arrow of Fig. 1.In this case, as it is shown in figure 1, upstream temperature detecting resistance body UR1, UR2 of being arranged in the upstream side of the flow direction of gas are cooled down by the gas flowed in the direction of the arrow.Therefore, the temperature of upstream temperature detecting resistance body UR1, UR2 reduces.To this, due to gas flow downstream temperature detecting resistance body BR1, BR2 after being heated by heating resistor HR, so the temperature being arranged in downstream temperature detecting resistance body BR1, the BR2 in the downstream of the flow direction of gas rises.Its result, the balance of temperature sensor bridge TSB crumbles, and produces the poor current potential being not zero between the node C and node D of temperature sensor bridge TSB.
This difference current potential is transfused to CPU1 via input circuit 2.And, identify the CPU1 that the poor current potential from temperature sensor bridge TSB is not zero and identify that the flow of the gas flowed in the direction of the arrow is not zero.Then, CPU1 accesses memorizer 4.In memorizer 4, storage has the contrast table (form) making difference current potential corresponding with gas flow, so, have accessed the CPU1 of memorizer 4 and calculate gas flow Q according to the contrast table being stored in memorizer 4.So, CPU1 the gas flow Q calculated via output circuit 3 from present embodiment 1 flow transducer output.As previously discussed it can be seen that adopt the flow transducer in present embodiment 1, it is possible to obtain the flow of gas.
The layout of < flow transducer constitutes >
Then, the layout composition of the flow transducer in present embodiment 1 is illustrated.Such as, the flow transducer in the present embodiment 1 shown in Fig. 1 is formed at 2 semiconductor chips.Specifically, heating resistor HR, computer heating control bridge HCB and temperature sensor bridge TSB are formed at a semiconductor chip, and CPU1, input circuit 2, output circuit 3 and memorizer 4 etc. are formed at other semiconductor chip.Hereinafter, the layout composition of the semiconductor chip being formed with heating resistor HR, computer heating control bridge HCB and temperature sensor bridge TSB is illustrated.
Fig. 2 indicates that the plane graph that the layout of the semiconductor chip CHP1 of the part constituting flow transducer in present embodiment 1 is constituted.First, as in figure 2 it is shown, semiconductor chip CHP1 rectangular shaped, gas flows from the left side (direction of arrow) to the right of this semiconductor chip CHP1.And, as in figure 2 it is shown, the rear side of the semiconductor chip CHP1 of rectangular shaped is formed with the barrier film DF of rectangular shape.Barrier film DF represents the caul plate area of the lower thickness of semiconductor chip CHP1.That is, the thickness being formed with the thickness in region of the barrier film DF region than other semiconductor chip CHP1 is thin.
As in figure 2 it is shown, in the region, surface of the semiconductor chip CHP1 relative in the rear surface regions of barrier film DF with so formation, be formed with flow testing division FDU.Specifically, the central part at this flow testing division FDU is formed with heating resistor HR, and this heating resistor HR is formed around constituting the resistive element R1 of computer heating control bridge.And, the resistive element R2～R4 constituting computer heating control bridge it is formed with in the outside of flow testing division FDU.Computer heating control bridge is controlled by the resistive element R1～R4 so formed.
Particularly, the resistive element R1 constituting computer heating control bridge is formed near heating resistor HR, it is possible to make the temperature of gas of heating heating that resistive element R1 precision reflects origin spontaneous heating resistive element HR well.
On the other hand, the resistive element R2～R4 constituting computer heating control bridge is arranged off heating resistor HR, thus it is possible to be difficult to be subject to the impact of the heating from heating resistor HR.
Therefore, resistive element R1 can be configured to the temperature of gas after being heated by heating resistor HR is reacted sensitively, and, resistance value is also easily maintained certain value by impact that resistive element R2～R4 is configured to be difficult to be subject to heating resistor HR.Therefore, it is possible to improve the accuracy of detection of computer heating control bridge.
Further, by clip formation in the way of the heating resistor HR of flow testing division FDU, configure upstream temperature detecting resistance body UR1, UR2 and downstream temperature detecting resistance body BR1, BR2.Specifically, the gas upstream side in flow arrow direction forms upstream temperature detecting resistance body UR1, UR2, formation downstream, downstream temperature detecting resistance body BR1, the BR2 in gas flow arrow direction.
By such as being constituted with upper type, when gas flows in the direction of the arrow, it is possible to make the temperature of upstream temperature detecting resistance body UR1, UR2 reduce, further, it is possible to make the temperature of downstream temperature detecting resistance body BR1, BR2 rise.This sample loading mode is utilized to be arranged in upstream temperature detecting resistance body UR1, UR2 of flow testing division FDU and downstream temperature detecting resistance body BR1, BR2 and formation temperature sensor bridge.
Above-mentioned heating resistor HR, upstream temperature detecting resistance body UR1, UR2 and downstream temperature detecting resistance body BR1, BR2 can pass through, such as after the method utilizing sputtering method, CVD (ChemicalVaporDeposition, chemical vapour deposition (CVD)) method etc. forms the semiconductive thin film of the metal film of platinum (platinum, platina) etc., polysilicon (polysilicon, polycrystalsilicon) etc., to utilize the method for ion(ic) etching etc. to be patterned and formed.
Upstream temperature detecting resistance body UR1, UR2 and downstream temperature detecting resistance body BR1, BR2 of the heating resistor HR that this sample loading mode is constituted, the resistive element R1～R4 constituting computer heating control bridge and composition temperature sensor bridge are each connected with distribution WL1, are drawn to pad (pad, the pad) PD1 of the configuration below along semiconductor chip CHP1.
As previously discussed, the semiconductor chip CHP1 of the part constituting flow transducer in present embodiment 1 is constituted by layout.Actual flow transducer includes: be formed with a semiconductor chip of heating resistor HR, computer heating control bridge HCB and temperature sensor bridge TSB；Another semiconductor chip with being formed with CPU1, input circuit 2, output circuit 3 and memorizer 4 etc., forms the structure on the substrate of these semiconductor chip actual installation.
Hereinafter, the flow transducer in the present embodiment 1 such as constituted with upper type actual installation is illustrated.
The actual installation of the flow transducer in < embodiment 1 constitutes >
Fig. 3 indicates that the figure that the actual installation of the flow transducer FS1 in present embodiment 1 is constituted, and indicates that the figure of composition before being packaged with resin.Particularly, Fig. 3 (a) indicates that the plane graph that the actual installation of the flow transducer FS1 in present embodiment 1 is constituted.Fig. 3 (b) is the sectional view cut off with line A-A of Fig. 3 (a), and Fig. 3 (c) indicates that the plane graph at the back side of semiconductor chip CHP1.
First, as shown in Fig. 3 (a), the flow transducer FS1 in present embodiment 1 has lead frame (leadframe) LF such as formed by copper product.This lead frame LF has chip carrying portion TAB1 and chip carrying portion TAB2 in the inside surrounded by sealing strip (dambar, the closeouts) DM constituting outer frame body.And, chip carrying portion TAB1 is equipped with semiconductor chip CHP1, chip carrying portion TAB2 is equipped with semiconductor chip CHP2.
Semiconductor chip CHP1 rectangular shaped, is formed with flow testing division FDU in substantially central portion.And, the distribution WL1 being connected with flow testing division FDU is formed on semiconductor chip CHP1, and this distribution WL1 is connected with multiple pads (pad) PD1 formed along semiconductor chip CHP1.In other words, flow testing division FDU and multiple pad PD1 is connected by distribution WL1.These pads PD1 is connected via the metal wire W1 such as formed by gold thread (spun gold) at lead-in wire (lead) LD1 of lead frame LF with being formed.Formed at the lead-in wire LD1 of lead frame LF and then be connected by the metal wire W2 such as formed by gold thread at the pad PD2 of semiconductor chip CHP2 with being formed.
Semiconductor chip CHP2 is formed with the integrated circuit formed by the semiconductor element of MISFET (MetalInsulatorSemiconductorFieldEffectTransistor (metal-insulator-semiconductor field effect transistor)) etc., distribution.Specifically, formed the CPU1 shown in pie graph 1, input circuit 2, output circuit 3 or, the integrated circuit of memorizer 4 etc..These integrated circuits are connected with the pad PD2 of the function as external connection terminals, pad PD3.And, formed and be connected by the metal wire W3 such as formed by gold thread with the lead-in wire LD2 formed at lead frame LF at the pad PD3 of semiconductor chip CHP2.Like this it can be seen that the semiconductor chip CHP1 and the semiconductor chip CHP2 being formed with control circuit that are formed with flow testing division FDU connect at the lead-in wire LD1 of lead frame LF by being formed.Wherein, in Fig. 3 although it is not shown, but in the outmost surface of semiconductor chip CHP1, as described later, by with the stress buffer of resin of bonding, surface protection, insulation etc. for the purpose of, and could be formed with polyimide film (polyimidefilm).
Then, as shown in Fig. 3 (b), it is formed with chip carrying portion TAB1 at lead frame LF, this chip carrying portion TAB1 is equipped with semiconductor chip CHP1.This semiconductor chip CHP1 is by jointing material (binding material, bond) ADH1 and chip carrying portion TAB1 bonding.It is formed with barrier film DF (thin plate part) at the back side of semiconductor chip CHP1, is formed with flow testing division FDU on the surface of the semiconductor chip CHP1 of relative with barrier film DF (opposed).On the other hand, it is formed with peristome OP1 in the bottom of the chip carrying portion TAB1 of the lower section being present in barrier film DF.Wherein, illustrate the example being formed with peristome OP1 in the bottom of the chip carrying portion TAB1 of the lower section being present in barrier film DF, but the thought of the technology in present embodiment 1 is not limited to this, it is also possible to use the lead frame LF being formed without peristome OP1.
And, as shown in Fig. 3 (b), semiconductor chip CHP1 surface (above), except flow testing division FDU, it is also formed with the pad PD1 being connected with flow testing division FDU, this pad PD1 to be connected at the lead-in wire LD1 of lead frame LF with being formed by metal wire W1.And, lead frame LF is also equipped with semiconductor chip CHP2, semiconductor chip CHP2 by jointing material ADH2 and chip carrying portion TAB2 bonding except semiconductor chip CHP1.Further, pad PD2 and the formation formed at semiconductor chip CHP2 is connected by metal wire W2 at the lead-in wire LD1 of lead frame LF.Electrically connected by metal wire W3 it addition, form pad PD3 and the formation at semiconductor chip CHP2 at the lead-in wire LD2 of lead frame LF.
For bonding the jointing material ADH2 of the jointing material ADH1 of semiconductor chip CHP1 and chip carrying portion TAB1, bonding semiconductor chip CHP2 and chip carrying portion TAB2, it is possible to use the jointing material being such as composition with the thermosetting resin of epoxy resin (epoxyresin), polyurethane resin (polyurethaneresin) etc., the jointing material that is composition with the thermoplastic resin of polyimide resin (polyimideresin), acrylic resin (acrylicresin), fluororesin etc..
Such as, the bonding of semiconductor chip CHP1 and chip carrying portion TAB1, it is possible to by applying jointing material ADH1, silver paste etc. or utilizing the jointing material of lamellar to carry out as Suo Shi Fig. 3 (c).Fig. 3 (c) indicates that the plane graph at the back side of semiconductor chip CHP1.As shown in Fig. 3 (c), it is formed with barrier film DF at the back side of semiconductor chip CHP1, in the way of surrounding this barrier film DF, is coated with jointing material ADH1.Additionally, in Fig. 3 (c), represent the example applying jointing material ADH1 in the way of quadrangle form surrounds barrier film DF, but be not limited to this, for instance, it is possible in the way of surrounding barrier film DF by the arbitrary shape of elliptical shape, apply jointing material ADH1.
Further, in present embodiment 1, as shown in Fig. 3 (a) and Fig. 3 (b), a part of semiconductor chip CHP1 is formed with framework FB.This framework FB such as rectangular shaped, is being internally formed peristome OP (FB).This framework FB is configured to form flow testing division FDU on the interarea of semiconductor chip CHP1 and exposes from peristome OP (FB), and is configured to be formed and exposes the outside at framework FB at multiple pad PD1 of semiconductor chip CHP1.
Hereinafter the composition of this framework FB is illustrated.Fig. 4 indicates that the figure of the composition of framework FB.Fig. 4 (a) indicates that the plane graph of the composition of framework FB, and Fig. 4 (b) is the sectional view cut off with line A-A of Fig. 4 (a).It addition, Fig. 4 (c) is the sectional view cut off with line B-B of Fig. 4 (a).
It can be seen that framework FB rectangular shaped as Suo Shi Fig. 4 (a), it is internally formed peristome OP (FB) at frame portion FP.And, as shown in Fig. 4 (b), Fig. 4 (c), framework FB is formed with the wall portion WP of parallel with the side of semiconductor chip CHP1 (parallel).And, as shown in Fig. 3 (b), by making this wall portion WP and semiconductor chip CHP1 be close to (close contact, bonding), it is possible to when with semiconductor chip CHP1 para-position, framework FB is arranged on semiconductor chip CHP1.Now, framework FB can bond with semiconductor chip CHP1, or does not bond with semiconductor chip CHP1.Particularly, when framework FB and semiconductor chip CHP1 bonding, it is possible to obtain the effect of position deviation (dislocation) being prevented from framework FB.As long as being correspondingly arranged additionally, formed at least one side of wall portion WP and the semiconductor chip CHP1 of framework FB.
At this, the framework FB in present embodiment 1 is characterised by: the coefficient of elasticity of the material of composition framework FB is less than this point of coefficient of elasticity of the material constituting semiconductor chip CHP1.Now, coefficient of elasticity refers to framework FB and the spring rate of semiconductor chip CHP1.Spring rate is the ratio fixed number (constant) during the form that the Hooke's law that the stress in elastomer and deformation are proportional to one another is expressed as " stress is proportional to deformation ".
For example, it is preferable to the comparison of the coefficient of elasticity of the coefficient of elasticity of framework FB and semiconductor chip CHP1 compares at temperature 25 DEG C (room temperatures).It addition, the comparison of coefficient of elasticity can carry out between the coefficient of elasticity of framework FB and the coefficient of elasticity of the base material constituting semiconductor chip CHP1.Such as, when the base material constituting semiconductor chip CHP1 is formed by monocrystal silicon, it is possible to utilize the material that at room temperature coefficient of elasticity is little compared with monocrystal silicon to constitute framework FB.
Above, to being relatively illustrated of the coefficient of elasticity of framework FB and semiconductor chip CHP1, its basic concept is in that to use the framework FB of hardness little (softness) compared with semiconductor chip CHP1.In this so-called hardness, it is possible to any one using the Vickers hardness under such as room temperature (Vickershardness), micro-vickers hardness (microVickershardness), Brinell hardness (Brinellhardness) or Rockwell hardness (Rockwellhardness) compares.
Specifically, the framework FB that hardness is little compared with semiconductor chip CHP1 can use with PBT resin, ABS resin, PC resin, nylon resin, PS resin, fluororesin etc. be composition thermoplastic resin, with epoxy resin, phenolic resin etc. be composition thermosetting resin, be the elastomeric material of composition, elastomer etc. with Teflon (registered trade mark), polyurethane, fluorine etc. macromolecular material.
As framework FB can use ejection formation (injection molding), transfer forming process casting resin in mould carry out injection molded (mould molding) and formed or utilize above-mentioned material to be formed thin-film member, plate shape part.
Additionally, utilize the framework FB that the macromolecular material of thermosetting resin, thermoplastic resin, elastomeric material, elastomer etc. is formed, can be used as framework FB self there is fusible jointing material to use, and, it is also possible to the organic filler of the inorganic filler of filling glass, silicon dioxide, Muscovitum, Talcum etc., carbon etc..
Additionally, carry out punching press, roll-in processing or casting by the metal material little with silicon resilience in comparison coefficient to pyrite, aluminium alloy, copper alloy etc. and shape, it is also possible to constitute framework FB.
In flow transducer FS1 in present embodiment 1, the actual installation of the flow transducer FS1 before being packaged with resin constitutes constructed as described above, below, the actual installation composition of the flow transducer FS1 after being packaged with resin is illustrated.
Fig. 5 indicates that the figure that the actual installation of the flow transducer FS1 in present embodiment 1 is constituted, and indicates that the figure of the composition after being packaged with resin.Particularly, Fig. 5 (a) indicates that the plane graph that the actual installation of the flow transducer FS1 in present embodiment 1 is constituted.Fig. 5 (b) is the sectional view cut off with line A-A of Fig. 5 (a), and Fig. 5 (c) is the sectional view cut off with line B-B of Fig. 5 (a).
In flow transducer FS1 in present embodiment 1, as shown in Fig. 5 (a), when formation is exposed at the peristome OP (FB) of framework FB from formation at the flow testing division FDU of semiconductor chip CHP1, the structure (fisrt feature point) that the entirety of the part and semiconductor chip CHP2 that form semiconductor chip CHP1 is covered by resin M R.That is, in present embodiment 1, the region of semiconductor chip CHP1 except being formed with the region of flow testing division FDU and being equipped with the region of framework FB and the whole region unification resin M R of semiconductor chip CHP2 are packaged.
Above-mentioned resin M R can use the thermoplastic resin of the thermosetting resin of such as epoxy resin, phenolic resin (phenol resin, phenolresin) etc., Merlon (polycarbonate), polyethylene terephthalate (polyethyleneterephthalate) etc., and, it is also possible in resin, it is mixed into the filler of glass and Muscovitum etc..
Utilize this resin M R encapsulation carried out can carry out when the semiconductor chip CHP1 that will be formed with flow testing division FDU with mould is fixing, so, the position deviation (dislocation) of semiconductor chip CHP1 can be suppressed, and a part and the semiconductor chip CHP2 of resin M R packaged semiconductor CHP1 can be used.Therefore, adopt the flow transducer FS1 in present embodiment 1, it is meant to suppress the position deviation of each flow transducer FS1, and a part of resin M R packaged semiconductor CHP1 and the whole region of semiconductor chip CHP2 can be used, it is meant that can suppress to be formed the deviation of the position of the flow testing division FDU at semiconductor chip CHP1.
Its result, according to present embodiment 1, the position that can make the flow testing division FDU of the flow of detected gas is consistent in each flow transducer FS1, can suppress the remarkable result of the aberrations in property of detected gas flow in each flow transducer FS1 therefore, it is possible to obtain.
Then, in flow transducer FS1 in present embodiment 1, as shown in Fig. 5 (b), surround the height of the framework FB in the both sides of the flow testing division FDU exposed or the height (second feature point) on the height of resin M R (packaging body) surface higher than the semiconductor chip CHP1 comprising flow testing division FDU.That is, the flow testing division FDU exposed is surrounded around by framework FB, and the height surrounding the framework FB of flow testing division FDU is higher than the height of flow testing division FDU.When the second feature point having in such present embodiment 1, it is possible to prevent parts install assemble time etc. parts collide the flow testing division FDU that exposes, thus it is possible to prevent from being formed with the breakage of the semiconductor chip CHP1 of flow testing division FDU.In other words, the height surrounding the framework FB of flow testing division FDU is higher than the height of the flow testing division FDU exposed.Therefore, when parts come in contact, first, contact with highly high framework FB, thus it is possible to prevent the exposed surface (XY face) of the highly low semiconductor chip CHP1 comprising flow testing division FDU and component contact and cause that breakage occurs semiconductor chip CHP1.
Particularly, in present embodiment 1, the coefficient of elasticity of configuration framework FB, this framework FB coefficient of elasticity less than semiconductor chip CHP1 in a part of semiconductor chip CHP1.In other words, framework FB is made up of the material that the hardness of hardness ratio semiconductor chip CHP1 is little.Therefore, when parts contact with framework FB, it is possible to utilize the deformation of the smaller framework FB of hardness to absorb and impact, therefore, can suppress to impact and be passed to the semiconductor chip CHP1 being arranged under framework FB, thereby, it is possible to be effectively prevented the breakage of semiconductor chip CHP1.
In addition, the height on the height of framework FB and resin M R (packaging body) surface higher than the semiconductor chip CHP1 comprising flow testing division FDU, the height of framework FB can height than resin M R (packaging body) high, it is also possible to lower than it, it is also possible on one face.
It addition, in present embodiment 1, in order to prevent resin M R from invading the inner space of barrier film DF, premise is in that to obtain and such as applies the structure of jointing material ADH1 in the way of the barrier film DF at the back side of semiconductor chip CHP1 surrounding formation.And, as shown in Fig. 5 (b) and Fig. 5 (c), peristome OP1 is formed on the bottom forming the chip carrying portion TAB1 of the lower section being positioned at barrier film DF at the back side of semiconductor chip CHP1, and, at the resin M R at the back side covering chip carrying portion TAB1, peristome OP2 is set.
Thus, when adopting the flow transducer FS1 of present embodiment 1, the inner space of barrier film DF connects with the space outerpace formed at the peristome OP2 and flow transducer FS1 of resin M R via the peristome OP1 formed in the bottom of chip carrying portion TAB1.As a result, it is possible to make the pressure of the pressure of the inner space of barrier film DF and the space outerpace of flow transducer FS1 equal, it is possible to suppress stress to put on barrier film DF.
As with upper type, the flow transducer FS1 in present embodiment 1 is actually installed composition, but in actual flow transducer FS1, after encapsulating with resin M R, the sealing strip DM constituting the outer frame body of lead frame LF is removed.Fig. 6 indicates that the plane graph that the actual installation of the flow transducer FS1 after eliminating sealing strip DM is constituted.As shown in Figure 6 it can be seen that pass through to cut off sealing strip DM, it is possible to multiple signals of telecommunication are independently taken out from multiple lead-in wire LD2.
The manufacture method > of the flow transducer in < present embodiment 1
Flow transducer FS1 in present embodiment 1 is constructed as described above, below, with reference to Fig. 7～Figure 14, its manufacture method is illustrated.Fig. 7～Figure 14 represents the manufacturing process in the cross section cut off with line A-A in Fig. 5 (a).
First, as it is shown in fig. 7, prepare the lead frame LF such as formed by copper product.This lead frame LF is integrally formed with chip carrying portion TAB1, chip carrying portion TAB2, lead-in wire LD1 and lead-in wire LD2, and the bottom of chip carrying portion TAB1 is formed with peristome OP1.
Then, as shown in Figure 8, chip carrying portion TAB1 carries semiconductor chip CHP1, chip carrying portion TAB2 carries semiconductor chip CHP2.Specifically, with jointing material ADH1, semiconductor chip CHP1 is connected to formation on the chip carrying portion TAB1 of lead frame LF.Now, by make formation semiconductor chip CHP1 barrier film DF with formed in the way of the peristome OP1 of the bottom of chip carrying portion TAB1 connects, semiconductor chip CHP1 is mounted on chip carrying portion TAB1.Additionally, form flow testing division FDU, distribution (not shown) and pad PD1 at semiconductor chip CHP1 by common semiconductor fabrication process.And, for instance, by anisotropic etching, forming barrier film DF with the position formed at the back side relative for the flow testing division FDU on the surface of semiconductor chip CHP1.Jointing material ADH2 is utilized also to be equipped with semiconductor chip CHP2 it addition, formed on the chip carrying portion TAB2 of lead frame LF.Advance with common semiconductor fabrication process, form the semiconductor element (not shown) of MISFET etc., distribution (not shown), pad PD2, pad PD3 at this semiconductor chip CHP2.
Then, as it is shown in figure 9, utilize metal wire (wire) W1 to connect formation at the pad PD1 of semiconductor chip CHP1 and form the lead-in wire LD1 (metal wire bonding (lead-in wire connection)) at lead frame LF.Equally, utilize lead-in wire LD1 and metal wire W2 to connect and form the pad PD2 at semiconductor chip CHP2, utilize lead-in wire LD2 and metal wire W3 to connect and form the pad PD3 at semiconductor chip CHP2.Metal wire W1～W3 is such as formed by gold thread.
Afterwards, as shown in Figure 10, semiconductor chip CHP1 carries framework FB.Specifically, framework FB is carried, make in the peristome OP (FB) being formed at inside, built-in (comprising) have formed semiconductor chip CHP1 flow testing division FDU (namely, by around), and be configured with in the outside of framework FB and formed at multiple pad PD1 of semiconductor chip CHP1.Thereby, it is possible to while making flow testing division FDU and multiple pad PD1 expose, framework FB is mounted on semiconductor chip CHP1.
Now, the framework FB in present embodiment 1 has wall portion WP, therefore, it is possible to make the one side of this wall portion WP and semiconductor chip CHP1 be close to, and, framework FB is arranged on semiconductor chip CHP1.Thereby, it is possible to improve the positioning precision of framework FB being mounted on semiconductor chip CHP1, it is possible to reliably make flow testing division FDU expose at the peristome OP (FB) of framework FB from being formed, and it is prevented from and the contacting of framework FB and pad PD1.
At this, framework FB and semiconductor chip CHP1 can bond, it is also possible to does not bond.Wherein, from the view point of suppress to carry the position deviation of the framework FB on semiconductor chip CHP1, it is preferable that make framework FB and semiconductor chip CHP1 bonding.
Afterwards, as shown in figure 11, it is formed with the surface of semiconductor chip CHP1 in the near zone of pad PD1, metal wire W1, lead-in wire LD1, metal wire W2, whole of interarea of semiconductor chip CHP2, a part (injection moulding (casting) operation) of metal wire W3 and lead-in wire LD2 with resin M R encapsulation.Specifically, as shown in figure 11, the semiconductor chip CHP1 being equipped with framework FB and the lead frame LF being equipped with semiconductor chip CHP2 is clipped with mold UM and lower mold BM across second space.Then, in case of heating, make resin M R flow into this second space, be thus formed with the surface of semiconductor chip CHP1 in the near zone of pad PD1, metal wire W1, lead-in wire LD1, metal wire W2, whole of interarea of semiconductor chip CHP2, a part of metal wire W3 and lead-in wire LD2 with resin M R encapsulation.Now, as shown in figure 11, the inner space of barrier film DF is isolated with above-mentioned second space by jointing material ADH1, so, when with resin M R filling second space, it is also possible to prevent resin M R from invading the inner space of barrier film DF.
And, in present embodiment 1, can carry out when the semiconductor chip CHP1 that will be formed with flow testing division FDU via framework FB mould is fixing, so, the position that can suppress semiconductor chip CHP1 is deviateed, further, with a part of resin M R packaged semiconductor CHP1 and semiconductor chip CHP2.In this case, manufacture method according to the flow transducer FS1 in present embodiment 1, the position being meant to suppress each flow transducer is deviateed, and, whole region by a part of resin M R packaged semiconductor CHP1 and semiconductor chip CHP2, it is meant that can suppress to be formed the position deviation of the flow testing division FDU at semiconductor chip CHP1.Its result, according to present embodiment 1, it is possible to the position making the flow testing division FDU of the flow of detected gas is consistent in each flow transducer, it is possible to obtain the remarkable result that can suppress the aberrations in property of detected gas flow in each flow transducer.
At this, the manufacture method of the flow transducer FS1 in present embodiment 1 is characterised by, across elastomer thin film LAF, mold UM is abutted to aspect ratio formed at the high framework FB of the height of the flow testing division FDU of semiconductor chip CHP1, and clip the lead frame LF being equipped with semiconductor chip CHP1 with lower mold BM and mold UM.
Thus, according to present embodiment 1, guarantee the first space S P1 (confined space) that the flow testing division FDU that will be formed in semiconductor chip CHP1 and near zone thereof surround, further, it is possible to encapsulation such as forms the region, surface of the semiconductor chip CHP1 that region is representative with pad.In other words, according to present embodiment 1, it is possible to make formation expose at flow testing division FDU and the near zone thereof of semiconductor chip CHP1, and the region, surface forming the semiconductor chip CHP1 that region is representative with pad is encapsulated.
As mentioned above, the function of the essence of framework FB, when mold UM is abutted to framework FB, guarantee the first space S P1 (confined space) flow testing division FDU and near zone thereof surrounded, in order to realize the function of this essence, semiconductor chip CHP1 is configured with framework FB, it is possible to the composition of the height of the acquirement framework FB height higher than flow testing division FDU.Namely, the composition of the height of the framework FB height higher than flow testing division FDU, from the view point of manufacture method, it is to guarantee the composition adopted for the purpose of the first space S P1 (confined space) flow testing division FDU and near zone thereof are surrounded, utilize this composition, formation can be made to expose at flow testing division FDU and near zone thereof, and encapsulate the region, surface forming the semiconductor chip CHP1 that region is representative with pad.Further, in present embodiment 1, framework FB high for rational height specific discharge test section FDU on semiconductor chip CHP1, with this, it is possible to utilize the grip force of mold UM to protect the flow testing division FDU exposed of the peristome OP (FB) from framework FB.
On the other hand, for the composition of height higher than flow testing division FDU of the height of framework FB, during from the viewpoint of the structure of flow transducer FS1, can also grasp be prevented from parts the structure of flow testing division FDU that parts collision is exposed is installed when assembling etc., thereby, it is possible to obtain the damaged advantage of the semiconductor chip CHP1 being prevented from being formed with flow testing division FDU.In other words, for the composition of height higher than flow testing division FDU of the height of framework FB, two sides being able to the viewpoint of the viewpoint from manufacture method and structure play the composition of significant effect.
Further, the framework FB in present embodiment 1 is made up of the material that hardness ratio semiconductor chip CHP1 is little, utilizes this composition, and framework FB also has other function.Hereinafter, the other function of this framework FB is illustrated.
The manufacture method of the flow transducer FS1 in present embodiment 1 is characterised by, when clipping, with mold UM and lower mold BM, the lead frame LF being equipped with semiconductor chip CHP1, be equipped with semiconductor chip CHP1 lead frame LF and mold UM and between be provided with framework FB and elastomer thin film LAF.
Such as, there is dimensional discrepancy in the thickness of each semiconductor chip CHP1, therefore, when the thickness of semiconductor chip CHP1 is thinner than average thickness, when clipping, with mold UM and lower mold BM, the lead frame LF being equipped with semiconductor chip CHP1, producing gap, resin M R is likely leaked to flow testing division FDU from this gap.
On the other hand, when the thickness of semiconductor chip CHP1 is thicker than average thickness, when clipping, with mold UM and lower mold BM, the lead frame LF being equipped with semiconductor chip CHP1, the power putting on semiconductor chip CHP1 becomes big, there is the semiconductor chip CHP1 problem broken.
So, in present embodiment 1, for breaking of revealing to the resin on flow testing division FDU of preventing that the thickness deviation of above-mentioned semiconductor chip CHP1 from causing or semiconductor chip CHP1, design be equipped with semiconductor chip CHP1 lead frame LF and mold UM and between (existence) elastomer thin film LAF and framework FB is set.Thus, such as, when the thickness of semiconductor chip CHP1 is thinner than average thickness, when clipping, with mold UM and lower mold BM, the lead frame LF being equipped with semiconductor chip CHP1, although generation gap, but it is able to this gap of elastomer thin film LAF filling, therefore, it is possible to prevent from revealing to the resin on semiconductor chip CHP1.
On the other hand, when the thickness of semiconductor chip CHP1 is thicker than average thickness, when clipping, with mold UM and lower mold BM, the lead frame LF being equipped with semiconductor chip CHP1, elastomer thin film LAF and framework FB is softer than semiconductor chip CHP1, therefore, the size of the thickness direction of elastomer thin film LAF and framework FB changes, so that absorbing the thickness of semiconductor chip CHP1.Thus, even if the thickness of semiconductor chip CHP1 is thicker than average thickness, it is also possible to prevent from, more than required, semiconductor chip CHP1 is applied power as a result, be prevented from breaking of semiconductor chip CHP1.
That is, the manufacture method according to the flow transducer in present embodiment 1, semiconductor chip CHP1 is extruded across elastomer thin film LAF and framework FB by mold UM.Therefore, it is possible to utilize the thickness change of elastomer thin film LAF and framework FB to absorb the actual installation deviation of parts that causes of thickness deviation of semiconductor chip CHP1, jointing material ADH1, lead frame LF.
Particularly, in present embodiment 1, big in the actual installation deviation of the thickness direction (Z-direction) of parts, when the thickness change that can not utilize elastomer thin film LAF absorbs the actual installation deviation of the parts that cause of thickness deviation of semiconductor chip CHP1, jointing material ADH1, lead frame LF, it also is able to the deformation of the thickness direction (Z-direction) of the framework FB little by the coefficient of elasticity coefficient of elasticity than semiconductor chip CHP1, relaxes the grip force putting on semiconductor chip CHP1.As a result, according to present embodiment 1, it is possible to prevent the breakage that the isolating of semiconductor chip CHP1, breach or crackle etc. are representative.
At this, for the actual installation deviation of absorption piece, the coefficient of elasticity of elastomer thin film LAF and the framework FB coefficient of elasticity than semiconductor chip CHP1 is little is important.Thus, even if when having the actual installation deviation of parts, it is possible to effectively relaxed the grip force from mold UM putting on semiconductor chip CHP1 by the deformation of the thickness of elastomer thin film LAF and framework FB.In other words, in present embodiment 1, the coefficient of elasticity of elastomer thin film LAF and the framework FB coefficient of elasticity than semiconductor chip CHP1 is little, and the combination of the coefficient of elasticity of elastomer thin film LAF and framework FB is freely.Such as, the coefficient of elasticity of framework FB can coefficient of elasticity than elastomer thin film LAF greatly can also be smaller, or can also be identical.Outside, the macromolecular material utilizing Teflon (registered trade mark), fluororesin etc. can be used as elastomer thin film LAF.
As it has been described above, the other function of the framework FB in present embodiment 1 is: the increase of the grip force from mold UM to semiconductor chip CHP1 that the actual installation deviation of suppression component causes.And, in order to realize this function, in present embodiment 1, the composition that the coefficient of elasticity of the employing framework FB coefficient of elasticity than semiconductor chip CHP1 is little.Thus, deposit in case in the actual installation deviation of parts, it is also possible to by the deformation of the thickness direction (Z-direction) of the coefficient of elasticity framework FB less than semiconductor chip CHP1, relax the grip force putting on semiconductor chip CHP1.As a result, according to present embodiment 1, it is possible to prevent the breakage that the isolating of semiconductor chip CHP1, breach or crackle etc. are representative.
Then, another feature of present embodiment 1 is illustrated.As shown in figure 11, in present embodiment 1, resin M R also flows into the rear side of lead frame LF.Therefore, forming peristome OP1 in the bottom of chip carrying portion TAB1, therefore, resin M R can flow into the inner space of barrier film DF from this peristome OP1 sometimes.
So, in present embodiment 1, the shape of the lower mold BM clipping lead frame LF is carried out research design.Specifically, as shown in figure 11, part (insertdie, insert mould, insert die) IP1 is put into what lower mold BM formed overshooting shape, when clipping lead frame LF with mold UM and lower mold BM, formed and be configured to insert the peristome OP1 formed in the bottom of chip carrying portion TAB1 at the part IP1 that puts into of the overshooting shape of lower mold BM.Thus, put into part IP1 and seamlessly insert in peristome OP1, thus it is possible to prevent resin M R from invading the inner space of barrier film DF from peristome OP1.That is, in present embodiment 1, put into part IP1 what lower mold BM formed overshooting shape, when carrying out resin-encapsulated, this is put into part IP1 and inserts and form peristome OP1 in the bottom of chip carrying portion TAB1.
Further, in present embodiment 1, research design is carried out in shape what put into part IP1.Specifically, in present embodiment 1, putting into part IP1 and include inserting the insertion section of peristome OP1 and support the base portion of this insertion section, the sectional area of base portion is formed as bigger than the sectional area of insertion section.Thus, putting into part IP1 and be formed as being provided with the structure of stage portion between insertion section and base portion, the bottom surface of this stage portion and chip carrying portion TAB1 is close to.
Part IP1 is put into, it is possible to obtain effect shown below by constructed as described above.Such as, when only being constituted, by above-mentioned insertion section, the shape putting into part IP1, insertion section is inserted in peristome OP1, therefore, puts into the diameter of insertion section of the part IP1 diameter than peristome OP1 slightly smaller.It is therefore contemplated that when be only made up of insertion section put into part IP1, even if when the insertion section putting into part IP1 is inserted into peristome OP1, between the insertion section and the peristome OP1 that insert, there is also small gap.In this case, resin M R invades the inner space of barrier film DF from gap sometimes.
So, in present embodiment 1, put into part IP1 and be formed as being formed the composition of insertion section in the base portion that sectional area compared with insertion section is bigger.In this case, as shown in figure 11, the inside of peristome OP1 is inserted into the insertion section putting into part IP1, and, the bottom surface of the base portion and chip carrying portion TAB1 of putting into part IP1 is close to.Its result, though put into produce small gap between the insertion section of part IP1 and peristome OP1 time, base portion is also firmly pressed the back side at chip carrying portion TAB1, thus it is possible to prevent resin M R from invading in peristome OP1.That is, in present embodiment 1, put into part IP1 and be formed as arranging the composition of insertion section in the base portion that sectional area compared with insertion section is bigger.So, utilize base portion to make resin M R not arrive this point of peristome OP1 by combination and the stage portion formed between base portion and insertion section is pressed against this point of chip carrying portion TAB1, and resin M R can be effectively prevented and invade the inner space of barrier film DF via peristome OP1.
As with upper type, in present embodiment 1, clipped the lead frame LF being equipped with the semiconductor chip CHP1 and semiconductor chip CHP2 that carry framework FB across second space with mold UM and lower mold BM.Then, in case of heating, make resin M R flow into this second space, be formed with the surface of semiconductor chip CHP1 in the near zone of pad PD1, metal wire W1, lead-in wire LD1, metal wire W2, whole of interarea of semiconductor chip CHP2, a part of metal wire W3 and lead-in wire LD2 with resin M R encapsulation.
Then, as shown in figure 12, in the stage of resin M R hardening, the lead frame LF being equipped with semiconductor chip CHP1 and semiconductor chip CHP2 is taken out from mold UM and lower mold BM.Thereby, it is possible to the flow transducer FS1 manufactured in present embodiment 1.
In addition, in resin-encapsulated operation (injection step) in present embodiment 1, using the mold UM and lower mold BM of the high-temperature of more than 80 DEG C, therefore, heat is passed to, from heated mold UM and lower mold BM, the resin M R being injected into second space at short notice.Its result, the manufacture method according to the flow transducer FS1 in present embodiment 1, it is possible to shorten the heat hardening time of resin M R.
Such as, as illustrated by wanting in the column solved the technical problem that in invention, when only implementing to utilize gold thread (metal wire) that casting resin carries out fixing, casting resin does not carry out the promotion of the hardening caused based on heating, so, time hardening to casting resin is elongated, and the problem that the productivity ratio in the manufacturing process of flow transducer reduces becomes notable.
To this, in the resin-encapsulated operation in present embodiment 1, as mentioned above, because using heated mold UM and lower mold BM, therefore, it is possible to from heated mold UM and lower mold BM to resin M R, transmission is hot at short notice, it is possible to shorten the heat hardening time of resin M R.As a result, according to present embodiment 1, it is possible to increase the productivity ratio in the manufacturing process of flow transducer FS1.
In present embodiment 1, such as, as shown in figure 11, when clipping, with mold UM and lower mold BM, the lead frame LF being equipped with semiconductor chip CHP1, it is illustrated being equipped with the example being provided with framework FB and elastomer thin film LAF between the lead frame LF of semiconductor chip CHP1 and mold UM.Wherein, the technological thought in present embodiment 1 is not limited to this, for instance, as shown in figure 13, it is also possible to be configured to, do not use elastomer thin film LAF, framework FB is only set, mold UM is pressed against the lead frame LF being equipped with semiconductor chip CHP1.
Even if in this case, also the coefficient of elasticity the making framework FB coefficient of elasticity less than semiconductor chip CHP1 it is configured to, thus, even if the actual installation deviation at parts is deposited in case, it also is able to utilize the deformation of the thickness direction (Z-direction) of the framework FB little with semiconductor chip CHP1 resilience in comparison coefficient, relaxes the grip force putting on semiconductor chip CHP1.Its result, according to present embodiment 1, it is possible to prevent the breakage that the isolating of semiconductor chip CHP1, breach or crackle etc. are representative.
The serviceability > of < framework
Then, the serviceability of the framework FB adopted in the flow transducer FS1 in present embodiment 1 is stated further in detail.
(1) Figure 14 indicates that the figure of the example not using the framework FB correlation technique carrying out resin-encapsulated.As shown in figure 14, in the related, it is configured to flow testing division FDU not carried out resin-encapsulated, therefore, mold UM is provided with the sealing SL in shape for lugs.And, flow testing division FDU is surrounded by this sealing (encapsulation part) SL, therefore, it is possible to form the first space S P1 (confined space) in the way of surrounding flow testing division FDU.In other words, in the related, the sealing SL being arranged on mold UM flow testing division FDU is surrounded, thus not by flow testing division FDU resin-encapsulated.
In the correlation technique such as constituted with upper type, it is necessary to especially the sealing SL arranged in shape for lugs at mold UM is designed (namely, making an effort).That is, the flow testing division FDU flow transducer exposed is made in order to manufacture, it is necessary to prepare the special mould UM of specialization in the manufacture of flow transducer.Accordingly, it would be desirable to prepare the special mold UM with sealing SL.
To this, in present embodiment 1, for instance, as shown in figure 13, semiconductor chip CHP1 configures framework FB, in the way of being close to this framework FB, presses mold UM.Now, in present embodiment 1, semiconductor chip CHP1 is configured with framework FB, it is possible to the composition of the height of the acquisition framework FB height higher than flow testing division FDU.That is, by making the height height higher than flow testing division FDU of framework FB, the first space S P1 (confined space) surrounding flow testing division FDU and near zone thereof necessarily it is able to ensure that.Therefore, according to present embodiment 1, it is possible to make flow testing division FDU and near zone thereof expose, and the region, surface forming the semiconductor chip CHP1 that region is representative with pad is encapsulated.
In other words, in present embodiment 1, to be arranged on semiconductor chip CHP1 by framework FB in the way of built-in (comprising) flow testing division FDU in the peristome OP (FB) being arranged at framework FB, and make the height height higher than flow testing division FDU of framework FB.As a result, when being positioned at the surface of mold UM in hole and being smooth, necessarily it is able to ensure that the first space S P1 (confined space) surrounding flow testing division FDU.That is, according to present embodiment 1, for instance the special design of sealing SL need not be arranged as correlation technique at mold UM, it becomes possible to guarantee the first space S P1 (confined space) surrounding flow testing division FDU.
This means to adopt present embodiment 1, the mold UM of special structure need not be used, the general mold UM (general part) for the entirety in hole being carried out resin-encapsulated can be used, it is meant that the general mold UM as general part can be used to manufacture the flow transducer FS1 making flow testing division FDU expose.Therefore, according to present embodiment 1, need not prepare to have descended the special time mold UM that the flow transducer of (being specifically designed) is special, it is possible to by the mold UM of normally used universal architecture widely, manufacture and make the flow testing division FDU flow transducer exposed.
(2) then, in the correlation technique shown in Figure 14, semiconductor chip CHP1 contacts with the sealing SL being formed directly into mold UM.Therefore, grip force is delivered to semiconductor chip CHP1 from formation at the sealing SL of mold UM.
At this, such as, there is dimensional discrepancy in the thickness of each semiconductor chip CHP1, therefore, when the thickness of semiconductor chip CHP1 is thicker than average thickness, when clipping, with mold UM and lower mold BM, the lead frame LF being equipped with semiconductor chip CHP1, the grip force putting on semiconductor chip CHP1 from sealing SL becomes big, and semiconductor chip CHP1 breaks sometimes.
To this, in present embodiment 1, do not make mold UM abut with direct semiconductor chip CHP1, make framework FB between mold UM and semiconductor chip CHP1.And, in present embodiment 1, use the material that the coefficient of elasticity of framework FB is less than semiconductor chip CHP1.Therefore, framework FB is softer than semiconductor chip CHP1, and therefore, when mold UM is pressed into framework FB, the size of the thickness direction of framework FB changes, so that absorbing the thickness deviation of semiconductor chip CHP1.Thus, even if the thickness of semiconductor chip CHP1 is thicker than average thickness, it is also possible to prevent from, more than needs, semiconductor chip CHP1 is applied grip force.As a result, according to present embodiment 1, it is possible to prevent breaking of semiconductor chip CHP1.
(3) and, in the correlation technique shown in Figure 14, formed little in the contact area of the sealing SL and semiconductor chip CHP1 of mold UM.Therefore, sealing SL and the contact area of semiconductor chip CHP1 are concentrated on from the mold UM grip force pressed.Therefore, the pressure being applied to the contact portion of sealing SL and semiconductor chip CHP1 becomes big, and thus, semiconductor chip CHP1 becomes easy breakage.Particularly, in the correlation technique shown in Figure 14, the contact area of sealing SL and semiconductor chip CHP1 is formed in the region with barrier film DF planes overlapping.This means to exist sealing SL and the contact area of semiconductor chip CHP1 in the region that the thickness of semiconductor chip CHP1 is thin.The region that the thickness of semiconductor chip CHP1 is thin is easily isolated, so, in the correlation technique shown in Figure 14, the pressure that the contact area of sealing SL and semiconductor chip CHP1 is little to be caused is concentrated and contact area is configured to the area coincidence thin with the thickness of semiconductor chip CHP1 when overlooking and cause, semiconductor chip CHP1 easily damaged.
To this, in present embodiment 1, for instance, as shown in figure 13, the contact area of framework FB and semiconductor chip CHP1 becomes big compared with the correlation technique shown in Figure 14.Therefore, put on the grip force of framework FB from mold UM, disperseed because the contact area of framework FB and semiconductor chip CHP1 is relatively big.Therefore, according to present embodiment 1, it is possible to relax the concentration of local of the grip force putting on semiconductor chip CHP1 via framework FB from mold UM, thereby, it is possible to suppress the breakage of semiconductor chip CHP1.And, for instance, as shown in figure 13, the contact area of framework FB and semiconductor chip CHP1, do not overlap with barrier film DF when overlooking.That is, in present embodiment 1, the contact area of framework FB and semiconductor chip CHP1 is not formed in being formed with the region that the thickness of the semiconductor chip CHP1 of barrier film DF is thin, and is formed in the thick region of the thickness of other semiconductor chip CHP1.According to above situation, according to present embodiment 1, the grip force that the increase of the contact area of framework FB and semiconductor chip CHP1 causes is utilized to be disperseed this point and the contact area formation cooperative effect at this point of region of the thickness thickness of semiconductor chip CHP1, it is possible to effectively to suppress the breakage of semiconductor chip CHP1.
(4) additionally, as described above, in the correlation technique shown in Figure 14, the contact area of sealing SL and semiconductor chip CHP1 is less, so the danger that the resin being injected into is released into the first space S P1 (confined space) surrounding flow testing division FDU uprises.
To this, in present embodiment 1, the contact area of framework FB and semiconductor chip CHP1 becomes big, it is possible to reduce the danger flowing into the first space S P1 (confined space) surrounding flow testing division FDU.
As it has been described above, according to present embodiment 1, be highly higher than the height of flow testing division FDU and the framework FB of the coefficient of elasticity coefficient of elasticity less than semiconductor chip CHP1 by using, it is possible to obtain the serviceability shown in above-mentioned (1)～(4).
< variation 1 >
Then, the variation 1 of the flow transducer FS1 in above-mentioned embodiment 1 is illustrated.In above-mentioned embodiment 1, for instance, as shown in Figure 4, the example that framework FB has wall portion WP is illustrated, but in this variation 1, the example being not provided with wall portion WP at framework FB is illustrated.
Figure 15 (a) indicates that the plane graph of the flow transducer FS1 in this variation 1.It addition, Figure 15 (b) is the sectional view cut off with line A-A of Figure 15 (a), Figure 15 (c) is the sectional view cut off with line B-B of Figure 15 (a).
As shown in Figure 15 (b) and Figure 15 (c), it is formed without wall portion at the framework FB being arranged on semiconductor chip CHP1.Even if when use is formed without the framework FB in wall portion such as aforesaid way, when the coefficient of elasticity higher than the height of flow testing division FDU and framework FB of the height of the framework FB coefficient of elasticity less than semiconductor chip CHP1, it is possible to obtain the effect identical with above-mentioned embodiment 1.
Wherein, in the framework FB in this variation 1, it is difficult to realize the raising of the positioning precision undertaken by wall portion, so from the view point of be securely fixed framework FB on semiconductor chip CHP1, it is preferable that the framework FB in this variation 1 and semiconductor chip CHP1 bonding.Now, the bonding of framework FB and semiconductor chip CHP1 such as can use jointing material, it is also possible to utilizes the material with adhesive effect to constitute framework FB.
It addition, such as, when overall dimensions more than semiconductor chip CHP1 of the overall dimensions of framework FB, the position of framework FB is deviateed because of the resin pressure in resin-encapsulated operation (injection step) sometimes.It is preferred, therefore, that the overall dimensions that the overall dimensions of such as framework FB is less than semiconductor chip CHP1.In other words, it is possible to preferably framework FB be formed as when overlooking built-in (comprising) in semiconductor chip CHP1 (by semiconductor chip CHP1 around/comprise).And then, in other words, the overall dimensions of framework FB can the overall dimensions on above perspective plane than semiconductor chip CHP1 little.By constructed as described above, it is possible to the position deviation of the framework FB that the resin pressure in suppression resin-encapsulated operation causes.
Figure 16 indicates that the figure in a cross section of the flow transducer in this variation 1.As shown in figure 16 it can be seen that framework FB built-in (comprising) in semiconductor chip CHP1 (by semiconductor chip CHP1 around/comprise).Specifically, in figure 16, when the width making semiconductor chip CHP1 be L1, framework width be L2, when the pass of L1 > L2 tie up in all of interface set up, framework FB can built-in (comprising) in semiconductor chip CHP1 (by semiconductor chip CHP1 around/comprise).
< variation 2 >
Then, the variation 2 of the flow transducer FS1 in above-mentioned embodiment 1 is illustrated.In above-mentioned embodiment 1, such as, as shown in Fig. 5 (b), Fig. 5 (c), it is illustrated via the example of configuration framework FB on jointing material (adhesive) the ADH1 semiconductor chip CHP1 carried on chip carrying portion TAB1.In this variation 2, the example being inserted with plate-like structure PLT between semiconductor chip CHP1 and lead frame LF is illustrated.
Figure 17 indicates that the plane graph of the structure of the flow transducer in this variation 2 before resin-encapsulated.Figure 18 is the sectional view cut off with line A-A of Figure 17, and Figure 19 is the sectional view cut off with line B-B of Figure 17.
As shown in figure 17 it can be seen that flow transducer FS1 in this variation 2, form plate-like structure PLT throughout the lower floor of semiconductor chip CHP1 and the lower floor of semiconductor chip CHP2.This plate-like structure PLT such as rectangular shaped, have and comprise when overlooking (around) overall dimensions of semiconductor chip CHP1 and semiconductor chip CHP2.
Specifically, as shown in Figure 18, Figure 19, the lead frame LF comprising chip carrying portion TAB1 and chip carrying portion TAB2 configures plate-like structure PLT.This plate-like structure PLT such as uses jointing material ADH3 and lead frame LF bonding, but also is able to use creamy material to bond.And, this plate-like structure PLT is equipped with semiconductor chip CHP1 via jointing material ADH1, and, it is equipped with semiconductor chip CHP2 via jointing material ADH2.Now, when plate-like structure PLT is formed by metal material, it is also possible to be connected with semiconductor chip CHP1 by metal wire W1, and, it is connected with chip CHP2 by metal wire W2 quasiconductor.Additionally, can also the parts of mounting condenser, critesistor etc. except above-mentioned plate-like structure PLT on lead frame LF.
Above-mentioned plate-like structure PLT improves mainly as the rigidity of flow sensor FS1, play a role from the padded coaming of outside impact.And, when plate-like structure PLT is constructed from a material that be electrically conducting, electrically connect with semiconductor chip CHP1 (pad PD1), semiconductor chip CHP2 (pad PD2), can be used in the supply of earthing potential (reference potential), it is also possible to be grounded the stabilisation of current potential.
Plate-like structure PLT can be made up of the thermosetting resin of the thermoplastic resin of such as PBT resin, ABS fat, PC resin, nylon resin, PS resin, PP resin, fluororesin etc., epoxy resin, phenolic resin, polyurethane resin etc..In this case, plate-like structure PLT can mainly as protection semiconductor chip CHP1, the semiconductor chip CHP2 not function by the padded coaming of the impact from external impact.
On the other hand, plate-like structure PLT can be formed by the metal material of ferroalloy, aluminium alloy or copper alloy etc. is carried out punch process, it is also possible to is formed by glass material.Particularly, when being formed plate-like structure PLT by metal material, it is possible to increase the rigidity of flow transducer FS1.Further, plate-like structure PLT and semiconductor chip CHP1, semiconductor chip CHP2 is made to electrically connect, it is also possible to plate-like structure PLT is used for the stabilisation of the supply of ground potential, ground potential.
In flow transducer FS1 in variation 2 constructed as described above, for instance, as shown in Figure 17～Figure 19, on semiconductor chip CHP1, also configure framework FB.And, framework FB has been internally formed peristome OP (FB), is formed and exposes from this peristome OP (FB) at the flow testing division FDU of semiconductor chip CHP1.In this variation 2, by making the height of the framework FB height higher than flow testing division FDU and making the coefficient of elasticity of framework FB less than semiconductor chip CHP1, it is also possible to obtain the effect identical with above-mentioned embodiment 1.
(embodiment 2)
In above-mentioned embodiment 1, such as, as shown in Fig. 5 (b), the flow transducer FS1 listing the double-chip structure with semiconductor chip CHP1 and semiconductor chip CHP2 is that example is illustrated, but the technological thought of the present invention is not limited to this, such as, it is also possible to be applied to the flow transducer including being integrally formed with the single chip architecture of a semiconductor chip of flow testing division and control portion (control circuit).In present embodiment 2, the situation enumerating the flow transducer that the technological thought of the present invention is applied to single chip architecture is that example illustrates.
The actual installation of the flow transducer in < embodiment 2 constitutes >
Figure 20 indicates that the figure that the actual installation of the flow transducer FS2 in present embodiment 2 is constituted, and indicates that the figure by the composition before resin-encapsulated.Particularly, Figure 20 (a) indicates that the plane graph that the actual installation of the flow transducer FS2 in present embodiment 2 is constituted.Figure 20 (b) is the sectional view cut off with line A-A of Figure 20 (a), and Figure 20 (c) is the sectional view cut off with line B-B of Figure 20 (a).It addition, Figure 20 (d) indicates that the plane graph at the back side of semiconductor chip CHP1.
First, as shown in Figure 20 (a), the flow transducer FS2 in present embodiment 2 has the lead frame LF being such as made up of copper product.This lead frame LF has chip carrying portion TAB1 in the inside surrounded by the sealing strip DM constituting outer frame body.And, chip carrying portion TAB1 is equipped with semiconductor chip CHP1.
Semiconductor chip CHP1 rectangular in shape, is formed with flow testing division FDU in substantially central portion.And, the distribution WL1A being connected with flow testing division FDU is formed on semiconductor chip CHP1, and this distribution WL1A is connected at the control portion CU of semiconductor chip CHP1 with being formed.This control portion CU is formed with the integrated circuit formed by the semiconductor element of MISFET (MetalInsulatorSemiconductorFieldEffectTransistor) etc., distribution.Specifically, be formed the CPU1 shown in pie graph 1, input circuit 2, output circuit 3 or, the integrated circuit of memorizer 4 etc..And, control portion CU is connected by distribution WL1B multiple pad PD1, the pad PD2 formed with the long limit along semiconductor chip CHP1.In other words, flow testing division FDU and control portion CU is connected by distribution WL1A, and control portion CU is connected with pad PD1, pad PD2 by distribution WL1B.Pad PD1 is connected with the lead-in wire LD1 formed at lead frame LF via the metal wire W1 such as formed by gold thread.On the other hand, pad PD2 is connected with the lead-in wire LD2 formed at lead frame LF via the metal wire W2 such as formed by gold thread.Furthermore, it is possible in the outmost surface (element formation face) of semiconductor chip CHP1, by with the stress buffer function of binder resin, surface protecting function or insulation protection function etc. for the purpose of and be formed with polyimide film.
Lead-in wire LD1 and lead-in wire LD2, to configure in the way of extension in the X-direction orthogonal with the flowing Y-direction of gas, has the function of the input and output carrying out external circuit.On the other hand, it is formed with prominent lead-in wire PLD along the Y-direction of lead frame LF.This prominent lead-in wire PLD is connected with chip carrying portion TAB1, but is not connected at pad PD1, PD2 of semiconductor chip CHP1 with being formed.That is, prominent lead-in wire PLD is from as the lead-in wire LD1 of above-mentioned input and output terminal function, lead-in wire, LD2 is different.
At this, in present embodiment 2, in the way of the long limit of the semiconductor chip CHP1 of rectangular in shape is parallel with the flow direction of gas (direction of arrow, Y-direction), on chip carrying portion TAB1, it is equipped with semiconductor chip CHP1.And, the long edge long side direction at semiconductor chip CHP1 is configured with multiple pad PD1, PD2.Respective and multiple lead-in wire LD1 of these multiple pad PD1 connect each via the multiple metal wire W1 to configure in the way of the long limit of semiconductor chip CHP1.Equally, multiple pad PD2 each and the connecting each via the multiple metal wire W2 to configure in the way of the long limit of semiconductor chip CHP1 of multiple lead-in wire LD2.Like this, long limit along the semiconductor chip CHP1 of rectangular shape configures multiple pad PD1, PD2, so, compared with the situation configuring multiple pad PD1, PD2 on the short side direction of semiconductor chip CHP1, it is possible to make more pad PD1, PD2 be formed at semiconductor chip CHP1.Particularly, in present embodiment 2, semiconductor chip CHP1 not only forms control portion CU and is also formed with flow testing division FDU in the lump, so, by making multiple pad PD1, PD2 arrange on long side direction, it is possible to effectively utilize the region on semiconductor chip CHP1.
Further, in present embodiment 2, a part of semiconductor chip CHP1 is formed with framework FB.This framework FB such as rectangular shaped, is being internally formed peristome OP (FB).This framework FB is configured to form flow testing division FDU on the interarea of semiconductor chip CHP1 and exposes from peristome OP (FB), and is configured to be formed and exposes the outside to framework FB at multiple pad PD1 of semiconductor chip CHP1.
Then, as shown in Figure 20 (b), it is formed with chip carrying portion TAB1 at lead frame LF, this chip carrying portion TAB1 is equipped with semiconductor chip CHP1.This semiconductor chip CHP1 is by jointing material ADH1 and chip carrying portion TAB1 bonding.The back side of semiconductor chip CHP1 is formed with barrier film DF (thin plate part), is formed with flow testing division FDU on the surface of the semiconductor chip CHP1 relative with barrier film DF.On the other hand, the bottom of the chip carrying portion TAB1 being present in the lower section of barrier film DF is formed with peristome OP1.
And, as shown in Figure 20 (b), semiconductor chip CHP1 surface (above), except flow testing division FDU, being also formed with pad PD1, pad PD2, this pad PD1 is connected at the lead-in wire LD1 of lead frame LF with being formed via metal wire W1.Equally, pad PD2 is connected at the lead-in wire LD2 of lead frame LF with being formed via metal wire W2.And, semiconductor chip CHP1 is configured with framework FB.This framework FB is formed with peristome OP (FB), flow testing division FDU and exposes from this peristome OP (FB).
It addition, as shown in Figure 20 (c), lead frame LF is formed with chip carrying portion TAB1 and prominent lead-in wire PLD, chip carrying portion TAB1 and prominent lead-in wire PLD forms as one.By jointing material ADH1 and semiconductor chip CHP1 bonding on this chip carrying portion TAB1.It is formed with barrier film DF (thin plate part) at the back side of semiconductor chip CHP1, is formed with flow testing division FDU on the surface of the semiconductor chip CHP1 relative with barrier film DF.On the other hand, it is formed with peristome OP1 in the bottom of the chip carrying portion TAB1 of the lower section being present in barrier film DF.It addition, be formed with control portion CU on the surface of semiconductor chip CHP1 in the way of arranged side by side with flow testing division FDU.Similarly, semiconductor chip CHP1 configures framework FB.This framework FB is formed with peristome OP (FB), flow testing division FDU and exposes from this peristome OP (FB).
The jointing material ADH1 of bonding semiconductor chip CHP1 and chip carrying portion TAB1 can use the thermoplastic resin of the thermosetting resin of such as epoxy resin, polyurethane resin etc., polyimide resin, acrylic resin etc..
Such as, the bonding of semiconductor chip CHP1 and chip carrying portion TAB1 can the mode as shown in Figure 20 (d) be undertaken by applying jointing material ADH1.Figure 20 (d) indicates that the plane graph at the back side of semiconductor chip CHP1.As shown in Figure 20 (d), it is formed with barrier film DF at the back side of semiconductor chip CHP1, in the way of surrounding this barrier film DF, applies jointing material ADH1.In addition, in Figure 20 (c), represent the example the mode that barrier film DF encirclement is quadrangle form to be applied jointing material ADH1, but be not limited to this, for example, it is also possible to apply jointing material ADH1 in the way of surrounding barrier film DF by the arbitrary shape of elliptical shape etc..
In flow transducer FS2 in present embodiment 2, the actual installation of the flow transducer FS2 before being packaged with resin constitutes and constitutes as described above, below, illustrate constituting by the actual installation of the flow transducer FS2 after resin-encapsulated.
Figure 21 indicates that the figure that the actual installation of the flow transducer FS2 in present embodiment 2 is constituted, and indicates that the figure of the composition after by resin-encapsulated.Particularly, Figure 21 (a) indicates that the plane graph that the actual installation of the flow transducer FS2 in present embodiment 2 is constituted.Figure 21 (b) is the sectional view cut off with line A-A of Figure 21 (a), and Figure 21 (c) is the sectional view cut off with line B-B of Figure 21 (a).
In flow transducer FS2 in present embodiment 2, as shown in Figure 21 (a), when formation is exposed at the peristome OP (FB) of framework FB from formation at the flow testing division FDU of semiconductor chip CHP1, form the structure that a part of semiconductor chip CHP1 is covered by resin M R.That is, in present embodiment 2, with the region of resin M R unified encapsulation semiconductor chip CHP1 except being formed with the region of flow testing division FDU and being equipped with the region of framework FB.
Utilize this resin M R encapsulation carried out, to can carry out when the semiconductor chip CHP1 being formed with flow testing division FDU is fixing with mould, thus it is possible to the position deviation of suppression semiconductor chip CHP1, further, it is possible to utilize a part of resin M R packaged semiconductor CHP1.This means, according to the flow transducer FS2 in present embodiment 2, the position that can suppress each flow transducer FS2 is deviateed, and, a part of resin M R packaged semiconductor CHP1 can be utilized, it is meant that can suppress to be formed the deviation of the position of the flow testing division FDU at semiconductor chip CHP1.
Result, according to present embodiment 2, the position that can make the flow testing division FDU of the flow of detected gas is consistent in each flow transducer FS1, therefore, it is possible to obtain the significant effect of the performance generation deviation that can suppress detected gas flow in each flow transducer FS2.
Then, in flow transducer FS1 in present embodiment 2, as shown in Figure 21 (a), surround the height of the framework FB in the both sides of the flow testing division FDU exposed or the height on the height of resin M R (packaging body) surface higher than the semiconductor chip CHP1 comprising flow testing division FDU.That is, the flow testing division FDU exposed is surrounded around by framework FB, and the height surrounding the framework FB of flow testing division FDU is higher than the height of flow testing division FDU.Adopt present embodiment 2 constructed as described above, it is possible to prevent the parts such as install when assembling of parts from colliding the flow testing division FDU that exposes, thus it is possible to prevent from being formed with the breakage of the semiconductor chip CHP1 of flow testing division FDU.In other words, the height surrounding the framework FB of flow testing division FDU is higher than the height of the flow testing division FDU exposed.Therefore, when parts come in contact, first, contact with highly high framework FB, thus it is possible to prevent the exposed surface (XY face) of the highly low semiconductor chip CHP1 comprising flow testing division FDU and component contact, semiconductor chip CHP1 from breakage occurring.
Particularly, in present embodiment 2, the coefficient of elasticity of configuration framework FB, this framework FB coefficient of elasticity less than semiconductor chip CHP1 in a part of semiconductor chip CHP1.In other words, framework FB is made up of the material that the hardness of hardness ratio semiconductor chip CHP1 is little.Therefore, when parts contact with framework FB, it is possible to utilize the deformation of the smaller framework FB of hardness to absorb and impact, therefore, can suppress to impact and be passed to the semiconductor chip CHP1 being arranged under framework FB, thereby, it is possible to be effectively prevented the breakage of semiconductor chip CHP1.
It addition, in present embodiment 2, in order to prevent resin M R from invading the inner space of barrier film DF, premise is in that to obtain and such as applies the composition of jointing material ADH1 in the way of the barrier film DF at the back side of semiconductor chip CHP1 surrounding formation.And, as shown in Figure 21 (b) and Figure 21 (c), formed and be formed with peristome OP1 in the bottom of the chip carrying portion TAB1 of the lower section being positioned at barrier film DF at the back side of semiconductor chip CHP1, further, peristome OP2 is set at the resin M R at the back side covering chip carrying portion TAB1.
Thus, when adopting the flow transducer FS2 of present embodiment 2, the inner space of barrier film DF connects with the space outerpace formed at the peristome OP2 and flow transducer FS1 of resin M R via the peristome OP1 formed in the bottom of chip carrying portion TAB1.As a result, it is possible to make the pressure of the pressure of the inner space of barrier film DF and the space outerpace of flow transducer FS2 equal, it is possible to suppress stress to put on barrier film DF.
As with upper type, the flow transducer FS2 in present embodiment 2 is actually installed composition, but in actual flow transducer FS2, after encapsulating with resin M R, the sealing strip DM constituting the outer frame body of lead frame LF is removed.Figure 22 indicates that the plane graph that the actual installation of the flow transducer FS2 after eliminating sealing strip DM is constituted.As shown in figure 22 it can be seen that pass through to cut off sealing strip DM, it is possible to multiple signals of telecommunication are taken out independently from multiple lead-in wire LD1 and lead-in wire LD2.
The manufacture method > of the flow transducer in < present embodiment 2
Flow transducer FS2 in present embodiment 2 is constructed as described above, below, with reference to Figure 23～Figure 26, its manufacture method is illustrated.Figure 23～Figure 26 represent in Figure 21 (a) with line B-B cut off cross section in manufacturing process.
First, as shown in figure 23, the lead frame LF such as formed is prepared by copper product.This lead frame LF is integrally formed with chip carrying portion TAB1, prominent lead-in wire PLD, and the bottom of chip carrying portion TAB1 is formed with peristome OP1.
Then, as shown in figure 24, chip carrying portion TAB1 carries semiconductor chip CHP1.Specifically, with jointing material ADH1, semiconductor chip CHP1 is connected to formation on the chip carrying portion TAB1 of lead frame LF.Now, semiconductor chip CHP1 is mounted on chip carrying portion TAB1 so that is formed and connects at the peristome OP1 of the bottom of chip carrying portion TAB1 with being formed at the barrier film DF of semiconductor chip CHP1.Additionally, form flow testing division FDU, control portion CU, distribution (not shown) and pad (not shown) at semiconductor chip CHP1 by common semiconductor fabrication process.And, for instance, by anisotropic etching, forming barrier film DF with the position formed at the back side relative for the flow testing division FDU on the surface of semiconductor chip CHP1.
Then, connect (metal wire bonding) formation with metal wire (not shown) and at the pad (not shown) of semiconductor chip CHP1 and form the lead-in wire (not shown) at lead frame LF.Metal wire (not shown) is such as formed by gold thread.
Afterwards, semiconductor chip CHP1 carries framework FB.Specifically, framework FB carries into have in formation built-in (comprising) in internal peristome OP (FB) and forms the flow testing division FDU at semiconductor chip CHP1, and is configured with the formation control portion CU at semiconductor chip CHP1 in the outside of framework FB.Thereby, it is possible to make flow testing division FDU and control portion CU expose, and framework FB is mounted on semiconductor chip CHP1.
Then, as shown in figure 25, across elastomer thin film LAF and the lead frame LF being equipped with the semiconductor chip CHP1 carrying framework FB is clipped with forming second space (hole) with mold UM and lower mold BM, then, in case of heating, make resin M R flow into this second space, be formed with a part of the surface of semiconductor chip CHP1 in the near zone of control portion CU, metal wire (not shown), prominent lead-in wire PLD with resin M R encapsulation.
In the manufacture method of the flow transducer FS2 in this present embodiment 2, such as, as shown in figure 25, mold UM is made to abut to the framework FB being highly higher than the height forming the flow testing division FDU at semiconductor chip CHP1 across elastomer thin film LAF, further, the lead frame LF being equipped with semiconductor chip CHP1 is clipped with lower mold BM and mold UM.
Thus, according to present embodiment 2, guarantee the first space S P1 (confined space) that the flow testing division FDU that will be formed in semiconductor chip CHP1 and near zone thereof surround, further, it is possible to encapsulate the region, surface of the semiconductor chip CHP1 that (closing) is such as representative with formation region, control portion.In other words, according to present embodiment 2, it is possible to make formation expose at flow testing division FDU and the near zone thereof of semiconductor chip CHP1, and the region, surface of the semiconductor chip CHP1 being representative with formation region, control portion is encapsulated.
And, in the manufacture method of the flow transducer FS2 in present embodiment 2, when clipping, with mold UM and lower mold BM, the lead frame LF being equipped with semiconductor chip CHP1, make framework FB and elastomer thin film LAF between be equipped with semiconductor chip CHP1 lead frame LF and mold UM and between.
Thus, even if depositing in case in the actual installation deviation of parts, it is also possible to by the deformation of the thickness direction (Z-direction) of the coefficient of elasticity framework FB less than semiconductor chip CHP1, relax the grip force putting on semiconductor chip CHP1.As a result, according to present embodiment 2, it is possible to prevent the breakage that the isolating of semiconductor chip CHP1, breach or crackle etc. are representative.
Then, as shown in figure 26, in the stage of resin M R hardening, the lead frame LF being equipped with semiconductor chip CHP1 is taken out from mold UM and lower mold BM.Thereby, it is possible to the flow transducer FS2 manufactured in present embodiment 1.In flow transducer FS2 in the present embodiment 2 that such as aforesaid way manufactures, it is possible to obtain the effect identical with above-mentioned embodiment 1.
Above, invention the present inventor proposed based on this embodiment is specifically illustrated, but the invention is not restricted to above-mentioned embodiment, can carry out various change in without departing from the scope of its purport, and this is self-evident.
Additionally, the film of silicon oxide film etc. that the flow transducer illustrated in above-mentioned embodiment can also be raw material with polyimide film, silicon nitride film, polysilicon film, TEOS (Si (OC2H5) 4) in the part formation on the surface (above) of the semiconductor chip CHP1 being formed with flow testing division FDU.Thus, in the part on the surface of the semiconductor chip CHP1 being close to resin, it is possible to realize the raising of bonding strength.
Polyimide film such as by semiconductor chip CHP1 coating is formed, can be implemented photoetching technique and etching technique and be patterned as required.Silicon nitride film, polysilicon film, silicon oxide film can utilize and be formed for the chemical vapor deposition method of representative, chemical vapor coating (deposition) method, chemical vapor deposition method, physical vapor flop-in method or physical vapor deposition with plasma CVD method, decompression CVD, atmospheric pressure cvd method etc..
Form these films on semiconductor chip CHP1, it is possible to prevent the thickness forming the silicon oxide film on the silicon (Si) constituting semiconductor chip CHP1 from increasing, it is possible to increase the cohesive of resin M R and semiconductor chip CHP1.
These film film forming are at least some of the semiconductor chip CHP1's covered by resin M R.
Additionally, it is set as about 1 μm～about 120 μm with the thickness of silicon oxide film etc. that polyimide film, silicon nitride film, polysilicon film, TEOS are raw material, but being not limited to this thickness, the region covered by resin M R among the region, surface of semiconductor chip CHP1 forms these films.
The flow transducer being illustrated in the above-described embodiment is the device of flow measuring gas, but for concrete gaseous species and be not limited, it can be widely applied for measuring air, LP gas, carbon dioxide (CO2Gas), the device of the flow of the arbitrary gas of Chlorofluorocarbons (CFCs) gas (Freon gas) etc..
Additionally, in the above-described embodiment, the flow transducer of the flow measuring gas is illustrated, but the thought of the technology of the present invention is not limited to this, it can be widely applied for carrying out when making a part for semiconductor element for humidity sensor etc. expose in the semiconductor device of resin-encapsulated.
Industrial utilizability
The present invention can be used in the manufacturing industry of the semiconductor device such as manufacturing flow transducer etc. widely.
Description of reference numerals
1CPU
2 input circuits
3 output circuits
4 memorizeies
ADH1 jointing material (adhesive)
ADH2 jointing material (adhesive)
ADH3 jointing material (adhesive)
BM lower mold
BR1 downstream temperature detecting resistance body
BR2 downstream temperature detecting resistance body
CHP1 semiconductor chip
CHP2 semiconductor chip
CU control portion
DF barrier film
DM sealing strip
FB framework
FDU flow testing division
FP frame portion
FS1 flow transducer
FS2 flow transducer
HCB computer heating control bridge
HR heating resistor
IP1 puts into part (insertdie, insertion mould, insert die)
LAF elastomer thin film
LD1 goes between
LD2 goes between
LF lead frame
MR resin
OP1 peristome
OP2 peristome
OP (FB) peristome
PD1 pad (pad)
PD2 pad
PD3 pad
The prominent lead-in wire of PLD
PLT plate-like structure
PS power supply
Q gas flow
R1 resistive element
R2 resistive element
R3 resistive element
R4 resistive element
SL sealing
SP1 the first space
TAB1 chip carrying portion
TAB2 chip carrying portion
Tr transistor
TSB temperature sensor bridge
UM mold
UR1 upstream temperature detecting resistance body
UR2 upstream temperature detecting resistance body
Vref1 reference voltage
Vref2 reference voltage
W1 metal wire
W2 metal wire
W3 metal wire
WL1 distribution
WL1A distribution
WL1B distribution
WP wall portion
Claims (13)
1. a flow transducer, it is characterised in that possess:
(a) first chip carrying portion；With
B () is arranged in the first semiconductor chip in described first chip carrying portion,
Described first semiconductor chip has:
(b1) flow testing division on the interarea of the first Semiconductor substrate is formed；With
(b2) described first Semiconductor substrate with the barrier film formed in the back side of described interarea opposition side, in the region relative with described flow testing division,
This flow transducer contains framework, and this framework is mounted on described first semiconductor chip and has the peristome at least exposing described flow testing division, and this framework is formed by the material that coefficient of elasticity is less than the coefficient of elasticity of described first semiconductor chip,
When the described flow testing division being formed on described first semiconductor chip exposes from the described peristome of described framework, a part for described first semiconductor chip packaged by the packaging body containing resin,
There is the described framework of described peristome there is wall portion that is parallel with at least one side of described first semiconductor chip and that be close to shown side,
The frame portion constituting described framework is configured to when overlooking not overlapping with described barrier film.
2. flow transducer as claimed in claim 1, it is characterised in that:
Described first semiconductor chip also has the control circuit portion controlling described flow testing division.
3. flow transducer as claimed in claim 1, it is characterised in that be also equipped with:
(c) second chip carrying portion；With
D () is arranged in the second semiconductor chip in described second chip carrying portion,
Described second semiconductor chip has the control circuit portion formed on the interarea of the second Semiconductor substrate, and described control circuit portion controls described flow testing division,
Described second semiconductor chip is packaged by described packaging body.
4. flow transducer as claimed in claim 1, it is characterised in that:
The described framework with described peristome is bonding with described first semiconductor chip.
5. flow transducer as claimed in claim 1, it is characterised in that:
The described framework with described peristome does not bond with described first semiconductor chip.
6. flow transducer as claimed in claim 1, it is characterised in that:
Described first semiconductor chip described interarea be formed with polyimide film, silicon nitride film, polysilicon film or silicon oxide film at least partially.
7. flow transducer as claimed in claim 1, it is characterised in that:
In the arbitrary section containing the described flow testing division exposed, the height of described framework or described packaging body is higher than the height of the described interarea of described first semiconductor chip containing described flow testing division.
8. flow transducer as claimed in claim 1, it is characterised in that:
It is inserted with plate-like structure between described first chip carrying portion and described first semiconductor chip.
9. a flow transducer, it is characterised in that possess:
(a) first chip carrying portion；With
B () is arranged in the first semiconductor chip in described first chip carrying portion,
Described first semiconductor chip has:
(b1) flow testing division on the interarea of the first Semiconductor substrate is formed；With
(b2) described first Semiconductor substrate with the barrier film formed in the back side of described interarea opposition side, in the region relative with described flow testing division,
This flow transducer contains framework, this framework is mounted on described first semiconductor chip and has the peristome at least exposing described flow testing division, this framework is when being mounted on described first semiconductor chip, and it is highly higher than the height of described flow testing division
When the described flow testing division being formed on described first semiconductor chip exposes from the described peristome of described framework, a part for described first semiconductor chip packaged by the packaging body containing resin,
There is the described framework of described peristome there is wall portion that is parallel with at least one side of described first semiconductor chip and that be close to shown side,
The frame portion constituting described framework is configured to when overlooking not overlapping with described barrier film.
10. a manufacture method for flow transducer, wherein,
Described flow transducer possesses:
First chip carrying portion；With
It is arranged in the first semiconductor chip in described first chip carrying portion,
Described first semiconductor chip has:
Form the flow testing division on the interarea of the first Semiconductor substrate；With
Described first Semiconductor substrate with the barrier film formed in the back side of described interarea opposition side, in the region relative with described flow testing division,
Described flow transducer contains framework, this framework is mounted on described first semiconductor chip and has the peristome at least exposing described flow testing division, this framework is formed by the material that coefficient of elasticity is less than the coefficient of elasticity of described first semiconductor chip, and this framework is when being mounted on described first semiconductor chip, it is highly higher than the height of described flow testing division
When the described flow testing division being formed on described first semiconductor chip exposes from the described peristome of described framework, a part for described first semiconductor chip packaged by the packaging body containing resin,
The described framework with described peristome has the wall portion parallel with at least one side of described first semiconductor chip,
The frame portion constituting described framework is configured to when overlooking not overlapping with described barrier film,
The manufacture method of described flow transducer is characterised by, including:
A () prepares the operation with the base material in described first chip carrying portion；
B () prepares the operation of described first semiconductor chip；
C () carries the operation of described first semiconductor chip in described first chip carrying portion；
D () is after described (c) operation, so that described flow testing division is contained in forms the described peristome in described framework, at least one side of described wall portion and described first semiconductor chip is close to, and constitute frame portion and the nonoverlapping mode of described barrier film of described framework, described first semiconductor chip configures the operation of described framework；With
E (), after described (d) operation, makes formation expose at the described flow testing division of described first semiconductor chip, and utilize described packaging body by the operation of the part encapsulation of described first semiconductor chip, wherein,
Described (e) operation includes:
(e1) operation of mold and lower mold is prepared；
(e2) after described (e1) operation, by making the bottom surface of described mold be close to described framework, form the first space surrounding described flow testing division, and utilize described mold and described lower mold to clip the operation of the described base material being equipped with described first semiconductor chip across second space；With
(e3) after described (e2) operation, described resin is made to flow into the operation of described second space.
11. the manufacture method of flow transducer as claimed in claim 10, it is characterised in that:
Described first semiconductor chip also has the control circuit portion controlling described flow testing division.
12. the manufacture method of flow transducer as claimed in claim 10, it is characterised in that also include:
F () prepared the operation with second semiconductor chip in the control circuit portion controlling described flow testing division before described (c) operation,
The described base material prepared in described (a) operation has the second chip carrying portion,
In described (c) operation, by described second semiconductor-chip-mounting in described second chip carrying portion,
In described (e) operation, described packaging body is utilized to encapsulate described second semiconductor chip,
In described (e2) operation, by making the bottom surface of described mold be close to described framework, form the first space surrounding described flow testing division, and utilize described mold and described lower mold to clip the described base material being equipped with described first semiconductor chip and described second semiconductor chip across described second space.
13. the manufacture method of flow transducer as claimed in claim 10, it is characterised in that:
In described (e2) operation, described mold is made to be close to described framework across elastomer thin film.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610390927.XA CN106092233B (en) | 2012-03-19 | 2012-12-04 | Flow sensor and its manufacturing method |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012062577A JP5763575B2 (en) | 2012-03-19 | 2012-03-19 | Flow sensor and manufacturing method thereof |
| JP2012-062577 | 2012-03-19 | ||
| PCT/JP2012/081340 WO2013140674A1 (en) | 2012-03-19 | 2012-12-04 | Flow sensor and method for manufacturing same |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610390927.XA Division CN106092233B (en) | 2012-03-19 | 2012-12-04 | Flow sensor and its manufacturing method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104024807A CN104024807A (en) | 2014-09-03 |
| CN104024807B true CN104024807B (en) | 2016-07-06 |
Family
ID=49222161
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201280065517.8A Expired - Fee Related CN104024807B (en) | 2012-03-19 | 2012-12-04 | Flow transducer and manufacture method thereof |
| CN201610390927.XA Expired - Fee Related CN106092233B (en) | 2012-03-19 | 2012-12-04 | Flow sensor and its manufacturing method |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610390927.XA Expired - Fee Related CN106092233B (en) | 2012-03-19 | 2012-12-04 | Flow sensor and its manufacturing method |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5763575B2 (en) |
| CN (2) | CN104024807B (en) |
| DE (1) | DE112012006049T5 (en) |
| WO (1) | WO2013140674A1 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6018903B2 (en) | 2012-12-17 | 2016-11-02 | 日立オートモティブシステムズ株式会社 | Physical quantity sensor |
| JP5916637B2 (en) | 2013-01-11 | 2016-05-11 | 日立オートモティブシステムズ株式会社 | Flow sensor and manufacturing method thereof |
| US10444175B2 (en) | 2015-04-03 | 2019-10-15 | Denso Corporation | Measurement device |
| JP6507804B2 (en) * | 2015-04-03 | 2019-05-08 | 株式会社デンソー | Air flow measuring device |
| JP6553587B2 (en) * | 2016-12-20 | 2019-07-31 | Ｎｉｓｓｈａ株式会社 | Gas sensor module and method of manufacturing the same |
| JP6905962B2 (en) * | 2018-07-12 | 2021-07-21 | 日立Astemo株式会社 | Flow sensor |
| JP7399348B2 (en) * | 2021-03-29 | 2023-12-15 | 日立Astemo株式会社 | flow measuring device |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102162744A (en) * | 2009-12-11 | 2011-08-24 | 日立汽车系统株式会社 | Flow sensor, method for manufacturing flow sensor and flow sensor module |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0469958A (en) * | 1990-07-10 | 1992-03-05 | Mitsubishi Electric Corp | Semiconductor device |
| CN1040577C (en) * | 1990-08-01 | 1998-11-04 | 涂相征 | Heat-flow sensor of integrated Si-membrane and making method thereof |
| JP3882592B2 (en) * | 2001-11-26 | 2007-02-21 | 松下電工株式会社 | Semiconductor ion sensor and manufacturing method thereof |
| EP1365216B1 (en) * | 2002-05-10 | 2018-01-17 | Azbil Corporation | Flow sensor and method of manufacturing the same |
| JP4609019B2 (en) * | 2004-09-24 | 2011-01-12 | 株式会社デンソー | Thermal flow sensor and manufacturing method thereof |
| JP4966526B2 (en) * | 2005-09-07 | 2012-07-04 | 日立オートモティブシステムズ株式会社 | Flow sensor |
| JP5012330B2 (en) * | 2007-08-29 | 2012-08-29 | 株式会社デンソー | Manufacturing method of sensor device and sensor device |
| JP5168184B2 (en) * | 2009-02-23 | 2013-03-21 | 株式会社デンソー | Sensor device and manufacturing method thereof |
| JP5315304B2 (en) * | 2010-07-30 | 2013-10-16 | 日立オートモティブシステムズ株式会社 | Thermal flow meter |
-
2012
- 2012-03-19 JP JP2012062577A patent/JP5763575B2/en not_active Expired - Fee Related
- 2012-12-04 DE DE112012006049.0T patent/DE112012006049T5/en not_active Withdrawn
- 2012-12-04 CN CN201280065517.8A patent/CN104024807B/en not_active Expired - Fee Related
- 2012-12-04 WO PCT/JP2012/081340 patent/WO2013140674A1/en active Application Filing
- 2012-12-04 CN CN201610390927.XA patent/CN106092233B/en not_active Expired - Fee Related
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102162744A (en) * | 2009-12-11 | 2011-08-24 | 日立汽车系统株式会社 | Flow sensor, method for manufacturing flow sensor and flow sensor module |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106092233A (en) | 2016-11-09 |
| JP2013195231A (en) | 2013-09-30 |
| CN104024807A (en) | 2014-09-03 |
| WO2013140674A1 (en) | 2013-09-26 |
| CN106092233B (en) | 2019-01-22 |
| DE112012006049T5 (en) | 2014-12-18 |
| JP5763575B2 (en) | 2015-08-12 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104024807B (en) | Flow transducer and manufacture method thereof | |
| CN103994795B (en) | Flow sensor and its manufacture method and flow sensor module and its manufacture method | |
| EP2837918B1 (en) | Flow rate sensor and method for making same | |
| CN104854431B (en) | Flow sensor and its manufacture method | |
| CN104335016B (en) | Flow transducer | |
| JP5456815B2 (en) | Flow sensor and manufacturing method thereof | |
| JP5220955B2 (en) | Flow sensor | |
| JP6045644B2 (en) | Flow sensor and manufacturing method thereof | |
| EP3064906A1 (en) | Airflow measurement device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder |
Address after: Ibaraki Patentee after: Hitachi astemo Co.,Ltd. Address before: Ibaraki Patentee before: HITACHI AUTOMOTIVE SYSTEMS, Ltd. |
|
| CP01 | Change in the name or title of a patent holder | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160706 |
|
| CF01 | Termination of patent right due to non-payment of annual fee |