CN106092233B - Flow sensor and its manufacturing method - Google Patents
Flow sensor and its manufacturing method Download PDFInfo
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- CN106092233B CN106092233B CN201610390927.XA CN201610390927A CN106092233B CN 106092233 B CN106092233 B CN 106092233B CN 201610390927 A CN201610390927 A CN 201610390927A CN 106092233 B CN106092233 B CN 106092233B
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- flow sensor
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
- G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
- G01F1/684—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow
- G01F1/688—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow using a particular type of heating, cooling or sensing element
- G01F1/69—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow using a particular type of heating, cooling or sensing element of resistive type
- G01F1/692—Thin-film arrangements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01F—MEASURING VOLUME, VOLUME FLOW, MASS FLOW OR LIQUID LEVEL; METERING BY VOLUME
- G01F1/00—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow
- G01F1/68—Measuring the volume flow or mass flow of fluid or fluent solid material wherein the fluid passes through a meter in a continuous flow by using thermal effects
- G01F1/684—Structural arrangements; Mounting of elements, e.g. in relation to fluid flow
- G01F1/6845—Micromachined devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/1015—Shape
- H01L2924/10155—Shape being other than a cuboid
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Physics & Mathematics (AREA)
- Fluid Mechanics (AREA)
- General Physics & Mathematics (AREA)
- Measuring Volume Flow (AREA)
Abstract
The present invention provides a kind of aberrations in property for being able to suppress each flow sensor to realize that performance improves the technology of (also include the case where improving reliability to realize performance raising).Such as, when clipping lead frame (LF) equipped with semiconductor chip (CHP1) with upper mold (UM) and lower mold (BM), framework (FB) and elastomer thin film (LAF) are provided between the lead frame (LF) equipped with semiconductor chip (CHP1) and upper mold (UM).At this point, the coefficient of elasticity of height of the height of framework (FB) higher than flow testing division (FDU) and framework (FB) is less than the coefficient of elasticity of semiconductor chip (CHP1).
Description
Technical field
The present invention relates to flow sensor and its manufacturing technologies, more particularly to the structure suitable for flow sensor is effective
Technology.
Background technique
In Japanese Unexamined Patent Publication 2004-74713 bulletin (patent document 1), the manufacturing method as semiconductor shell is disclosed
There are the mold hold assembly by being provided with divergence type thin web, the method for flowing into resin.
In addition, in Japanese Unexamined Patent Publication 2011-122984 bulletin (patent document 2), about flowing gas (air)
The flow sensor that flow testing division part is exposed records mold using by spring-loaded and is put into part or elastomer thin film
Flow sensor manufacturing method.
Existing technical literature
Patent document
Patent document 1: Japanese Unexamined Patent Publication 2004-74713 bulletin
Patent document 2: Japanese Unexamined Patent Publication 2011-122984 bulletin
Summary of the invention
Invention technical problem to be solved
For example, being currently provided with electronic control fuel injection device in the internal combustion engine of automobile etc..The electronically controlled fuel
Injection apparatus has to be adjusted by the amount suitably to the gas (air) and fuel that flow into internal combustion engine, keeps internal combustion engine effective
The effect of ground operating.Therefore, in electronic control fuel injection device, need correctly to grasp the gas (sky for flowing into internal combustion engine
Gas).Therefore, electronic control fuel injection device is provided with flow sensor (the air mass flow biography of measurement gas (air) flow
Sensor).
In flow sensor, especially with the flow sensor that semiconductor microactuator processing technology manufactures, because can cut
Subtract cost and can be driven by electricity with low, so being concerned.This flow sensor, for example, by using such as flowering structure: by silicon shape
At semiconductor substrate the back side formed using anisotropic etching and the diaphragm (diaphragm) (thin plate part) that is formed, with
The surface of the opposite semiconductor substrate of the diaphragm, which is formed with, is formed by flow testing division by heating resistor and temperature detecting resistance body.
In actual flow sensor, for example, in addition to the first semiconductor chip for being formed with diaphragm and flow testing division
Except, also there is second semiconductor chip in the control circuit portion for being formed with control flow testing division.Above-mentioned first semiconductor core
Piece and the second semiconductor chip for example carry on substrate, are electrically connected with the wiring (terminal) of formation on substrate.Specifically,
For example, the first semiconductor chip is connect by the metal wire formed by gold thread (spun gold) with the wiring for being formed in substrate, the second half
Conductor chip is using the concave-convex electrode (bump electrode) for being formed in the second semiconductor chip, with the wiring for being formed in substrate
Connection.In this way, carrying the first semiconductor chip on substrate and the second semiconductor chip through the formation of the wired electric of substrate
Connection.As a result, it is possible to by the control circuit for being formed in the second semiconductor chip portion to the stream for being formed in the first semiconductor chip
Amount test section is controlled, and flow sensor is constituted.
At this point, connection the first semiconductor chip and substrate gold thread (spun gold, metal wire) in order to prevent because deformation caused by
Contact etc., it is usually fixed by casting resin (potting resin, joint filling resin, sealing resin).That is, gold thread (metal wire) by
Casting resin is covered and is fixed, using the casting resin, to protect gold thread (metal wire).On the other hand, flow sensor is constituted
The first semiconductor chip and the second semiconductor chip be not filled with resin-encapsulated usually.In other words, common flow sensor
In, the structure of resin covering is filled with using only gold thread (metal wire).
Here, the fixation of gold thread (metal wire) carried out using casting resin, be not using mold etc. by the first half
Carried out in the state that conductor chip is fixed, so it some times happens that because casting resin contraction caused by the first semiconductor core
The problem of piece deviates from loading position.Also, because casting resin is formed and dripping, there are the rulers of casting resin
The low problem of very little precision.As a result, being formed in taking for the first semiconductor chip of flow testing division in each flow sensor
It carries position and generates deviation, and also delicate difference, the detection performance of each flow sensor generate inclined the forming position of casting resin
Difference.Therefore, it in order to inhibit the aberrations in property of each flow sensor, needs to carry out detection performance to each flow sensor to repair
Just, the performance correction process in the manufacturing process of additional flow sensor is needed.Especially, become in performance correction process
The problem of when longer, there is also the productivities in the manufacturing process of flow sensor to reduce, the cost increase of flow sensor.And
And because casting resin and without using heating carry out hardening promotion, institute so that casting resin harden until time
Longer, the productivity in the manufacturing process of flow sensor reduces.
The purpose of the present invention is to provide a kind of aberrations in property for being able to suppress each flow sensor to realize performance
Improve the technology of (also including to improve reliability to realize the case where performance improves).
Above-mentioned purpose of the invention and other purposes and new feature, can be according to the record of this specification and attached
Scheme and becomes clear.
For solving the technical solution of technical problem
When briefly describing the summary of representative content among invention disclosed in the present application, as described below.
Flow sensor in the embodiment of representative has: (a) the first chip carrying portion；(b) configuration is above-mentioned the
The first semiconductor chip in one chip carrying portion, above-mentioned first semiconductor chip include (b1) and are formed in the first semiconductor lining
Flow testing division on the interarea at bottom；(b2) in the back side with above-mentioned interarea opposite side of above-mentioned first semiconductor substrate,
In the diaphragm that the region opposite with above-mentioned flow testing division is formed.Here, above-mentioned flow sensor contains framework, which is carried
In above-mentioned first semiconductor core on piece and there is the opening portion at least exposing above-mentioned flow testing division, the framework is by coefficient of elasticity ratio
The material that the coefficient of elasticity of above-mentioned first semiconductor chip is small is formed.Moreover, being formed in above-mentioned first semiconductor core on piece
In the state that above-mentioned flow testing division exposes from the above-mentioned opening portion of above-mentioned framework, a part of quilt of above-mentioned first semiconductor chip
Packaging body encapsulation containing resin.
In addition, the manufacturing method of the flow sensor in the embodiment represented is the flow sensor with above structure
Manufacturing method.The manufacturing method of above-mentioned flow sensor includes: that (a) prepares the substrate with above-mentioned first chip carrying portion
Process；(b) prepare the process of above-mentioned first semiconductor chip；(c) above-mentioned the first half are carried in above-mentioned first chip carrying portion
The process of conductor chip.Then, further includes: (d) is after above-mentioned (c) process, so that above-mentioned flow testing division is contained in and is formed in
The mode of the above-mentioned opening portion of above-mentioned framework, in the process that above-mentioned first semiconductor core on piece configures above-mentioned framework；(e) upper
After stating (d) process, expose the above-mentioned flow testing division for being formed in above-mentioned first semiconductor chip, and utilize above-mentioned packaging body
By the process of a part encapsulation of above-mentioned first semiconductor chip.Here, above-mentioned (e) process include: (e1) prepare upper mold and
The process of lower mold；(e2) after above-mentioned (e1) process, by making the bottom surface of above-mentioned upper mold be tightly attached to above-mentioned framework, packet is formed
Place the first space for stating flow testing division, and using above-mentioned upper mold and above-mentioned lower mold across second space clip equipped with
The process of the above-mentioned substrate of above-mentioned first semiconductor chip；(e3) flows into above-mentioned resin above-mentioned after above-mentioned (e2) process
The process of second space.
Invention effect
It is as follows if simple declaration is among invention disclosed herein, the effect as obtained from the invention of representative
It is described.
It is able to suppress the aberrations in property of each flow sensor and realizes the raising of performance.
Detailed description of the invention
Fig. 1 is the circuit block diagram for indicating the circuit of the flow sensor in embodiment 1 and constituting.
Fig. 2 is the layout composition for indicating to constitute the semiconductor chip of a part of the flow sensor in embodiment 1
Plan view.
Fig. 3 is the figure for indicating the actual installation of the flow sensor in embodiment 1 and constituting, and expression is packaged with resin
The figure of composition before.In particular, (a) is the plan view for indicating the actual installation of the flow sensor in embodiment 1 and constituting,
(b) be (a) with line A-A cut off sectional view, be (c) plan view for indicating the back side of semiconductor chip.
Fig. 4 (a) is the plan view for indicating the composition of framework, is (b) sectional view cut off with line A-A of (a), is (c) (a)
With line B-B cut off sectional view.
Fig. 5 is the figure for indicating the actual installation of the flow sensor in embodiment 1 and constituting, and expression is packaged with resin
The figure of composition later.In particular, (a) is the plan view for indicating the actual installation of the flow sensor in embodiment 1 and constituting,
(b) be (a) with line A-A cut off sectional view, (c) be (a) with line B-B cut off sectional view.
Fig. 6 is the plan view for indicating the actual installation of the flow sensor after removing sealing strip and constituting.
Fig. 7 is the sectional view for indicating the manufacturing process of the flow sensor in embodiment 1.
Fig. 8 is the sectional view for indicating the then manufacturing process of the flow sensor of Fig. 7.
Fig. 9 is the sectional view for indicating the then manufacturing process of the flow sensor of Fig. 8.
Figure 10 is the sectional view for indicating the then manufacturing process of the flow sensor of Fig. 9.
Figure 11 is the sectional view for indicating the then manufacturing process of the flow sensor of Figure 10.
Figure 12 is the sectional view for indicating the then manufacturing process of the flow sensor of Figure 11.
Figure 13 is to indicate to be pressed into without using elastomer thin film, only across framework, by upper mold equipped with semiconductor chip
Lead frame an example sectional view.
Figure 14 is the figure for indicating to carry out an example of the relevant technologies of resin-encapsulated without using framework.
Figure 15 (a) is the plan view for indicating the flow sensor in variation 1, is (b) the cutting with line A-A cutting of (a)
Face figure, (c) be (a) with line B-B cut off sectional view.
Figure 16 is the figure for indicating a section of the flow sensor in variation 1.
Figure 17 is the plan view for indicating the structure of the flow sensor in variation 2, before resin-encapsulated.
Figure 18 is the sectional view of Figure 17 cut off with line A-A.
Figure 19 is the sectional view of Figure 17 cut off with line B-B.
Figure 20 is the figure for indicating the actual installation of the flow sensor in embodiment 2 and constituting, and expression is sealed with resin
The figure of composition before dress.In particular, (a) is the plane for indicating the actual installation of the flow sensor in embodiment 2 and constituting
Scheme, be (b) sectional view cut off with line A-A of (a), is (c) sectional view cut off with line B-B of (a), is (d) to indicate partly to lead
The plan view at the back side of body chip.
Figure 21 is the figure for indicating the actual installation of the flow sensor in embodiment 2 and constituting, and expression is sealed with resin
The figure of composition after dress.In particular, (a) is the plan view for indicating the actual installation of the flow sensor in embodiment 2 and constituting,
(b) be (a) with line A-A cut off sectional view, (c) be (a) with line B-B cut off sectional view.
Figure 22 is the plan view for indicating the actual installation of the flow sensor after removing sealing strip and constituting.
Figure 23 is the sectional view for indicating the manufacturing process of the flow sensor in embodiment 2.
Figure 24 is the sectional view for indicating the then manufacturing process of the flow sensor of Figure 23.
Figure 25 is the sectional view for indicating the then manufacturing process of the flow sensor of Figure 24.
Figure 26 is the sectional view for indicating the then manufacturing process of the flow sensor of Figure 25.
Specific embodiment
In the following embodiments, it is being divided into multiple portions whenever necessary or embodiment is said for convenience
It is bright, but other than the case where especially explicitly indicating that, they not have no bearing on each other, a side has a part of another party
Or the relationship of whole variation, detailed, supplementary explanations etc..
In addition, in the following embodiments, in quantity for referring to element etc. (including number, numerical value, amount, range etc.)
In the case of, other than the case where being clearly defined as specific quantity the case where especially expressing and in principle etc., and it is unlimited
It is set to specific quantity, can is specific quantity above and below.
Also, in the following embodiments, this composition element (also comprising element step etc.) is in addition to the feelings especially expressed
Clearly it is considered except necessary situation in condition and principle, is not necessary, this is self-evident.
Equally, in the following embodiments, when referring to the shape, positional relationship etc. of constituent element etc., in addition to spy
Clearly it is considered except really not so situation etc. on the case where not expressing and principle, also includes substantially close with its shape etc.
Like or similar situation.This is also identical for above-mentioned numerical value and range.
In addition, being marked in principle to same parts identical attached in all figures for being illustrated to embodiment
Icon note, omits its repeated explanation.Wherein, for easy understanding attached drawing, in the plan view, advantage mark shade.
(embodiment 1)
The circuit of < flow sensor constitutes >
Firstly, illustrating that the circuit of flow sensor is constituted.Fig. 1 is the electricity for indicating the flow sensor in present embodiment 1
The circuit block diagram that road is constituted.In Fig. 1, flow sensor in present embodiment 1, firstly, having for controlling flow sensor
CPU (Central Processing Unit) 1, also, have for the CPU1 input input signal input circuit 2
With the output circuit 3 for exporting the output signal from CPU1.Moreover, flow sensor is provided with the memory of storing data
4, CPU1 access memories 4, can be referring to the data for being stored in memory 4.
Then, CPU1 is connect via output circuit 3 with the base stage of transistor Tr.Moreover, the collector of transistor Tr with
Power ps connection, the emission electrode of transistor Tr are connect via heating resistor HR with ground (GND).Therefore, transistor Tr by
CPU1 control.In other words, the base stage of transistor Tr is connect via output circuit 3 with CPU1, so, the output signal from CPU1
It is entered the base stage of transistor Tr.
As a result, using the output signal (control signal) from CPU1, to control the electric current flowed in transistor Tr.When
When becoming larger due to the electric current that the output signal from CPU1 flows in transistor Tr, supplied from power ps to heating resistor HR
Electric current become larger, the heating amount of heating resistor HR becomes larger.
On the other hand, when the electric current flowed in transistor Tr due to the output signal from CPU1 is tailed off, to fever
The electric current of resistor body HR supply tails off, and the heating amount of heating resistor HR is reduced.
In this way it is found that in the flow sensor in present embodiment 1, flowed in heating resistor HR by CPU1 control
The magnitude of current, the calorific value as a result, from heating resistor HR controlled by CPU1.
Then, in the flow sensor in present embodiment 1, the electricity flowed in heating resistor HR is controlled by CPU1
Stream, therefore it is provided with computer heating control bridge HCB.The computer heating control bridge HCB detects the calorific value distributed from heating resistor HR, by this
Testing result is output to input circuit 2.As a result, CPU1 can input the testing result from computer heating control bridge HCB, it is based on this
Kind situation, to control the electric current flowed in transistor Tr.
Specifically, as shown in Figure 1, computer heating control bridge HCB has structure between reference voltage Vref1 and ground (GND)
Resistor body R1~resistor body R4 of Cheng Qiao.In the computer heating control bridge HCB such as constituted with upper type, heated by heating resistor HR
Gas afterwards is only than suction temperature in the case where high certain certain temperature (Δ T, for example, 100 DEG C), with the current potential and section of node A
The potential difference of the current potential of point B is that the mode of 0V sets resistor body R1~resistor body R4 resistance value.That is, constituting computer heating control bridge
Resistor body R1~resistor body R4 of HCB with by the member of formation of resistor body R1 and resistor body R3 series connection and by resistor body R2 and
The mode that the member of formation that resistor body R4 is connected in series connects side by side between reference voltage Vref1 and ground (GND) constitutes bridge.
Moreover, the tie point that the tie point of resistor body R1 and resistor body R3 are node A, resistor body R2 and resistor body R4 is node B.
At this point, being contacted by the gas after heating resistor HR heating with the resistor body R1 for constituting computer heating control bridge HCB.Cause
This becomes based on the resistance value for constituting the resistor body R1 of computer heating control bridge HCB due to the calorific value from heating resistor HR
Change.In this way, the potential difference between node A and node B changes when the resistance value of resistor body R1 changes.Node A and
The potential difference of node B is entered CPU1 via input circuit 2, so, CPU1 is controlled based on the potential difference of node A and node B
The electric current flowed in transistor Tr.
Specifically, CPU1 controls the electric current flowed in transistor Tr, so that the potential difference of node A and node B become
0V, to control the calorific value from heating resistor HR.In other words, it is known that: in the flow sensor in present embodiment 1,
CPU1 carries out feedback control based on the output of computer heating control bridge HCB, by the gas after being heated by heating resistor HR than air-breathing temperature
The certain value of degree only high certain certain temperature (Δ T, for example, 100 DEG C).
Then, the flow sensor in present embodiment 1 has the temperature sensor bridge of the flow for detection gas
TSB.The temperature sensor bridge TSB has 4 temperature detecting resistance bodies for constituting bridge between reference voltage Vref2 and ground (GND).
4 temperature detecting resistance bodies are made of 2 upstream temperature detecting resistance body UR1, UR2 and 2 downstreams temperature detecting resistance body BR1, BR2.
That is, the direction of the arrow of Fig. 1 indicates the direction of gas flowing, it is provided in the upstream side in the direction of gas flowing
Upstream temperature detecting resistance body UR1, UR2 are provided with downstream temperature detecting resistance body BR1, BR2 in downstream side.These upstream temperature detecting resistance bodies
UR1, UR2 and downstream temperature detecting resistance body BR1, BR2 are configured to identical to the distance of heating resistor HR.
In temperature sensor bridge TSB, upstream temperature detecting resistance body UR1 and downstream temperature detecting resistance body BR1 are in reference voltage
It is connected in series between Vref2 and ground (GND), the tie point of upstream temperature detecting resistance body UR1 and downstream temperature detecting resistance body BR1 are
Node C.
On the other hand, upstream temperature detecting resistance body UR2 and downstream temperature detecting resistance body BR2 are in ground (GND) and reference voltage
It is connected in series between Vref2, the tie point of upstream temperature detecting resistance body UR2 and downstream temperature detecting resistance body BR2 are node D.Moreover,
The current potential of node C and the current potential of node D are entered CPU1 via input circuit 2.Moreover, setting upstream temperature detecting resistance body UR1,
Each resistance value of UR2 and downstream temperature detecting resistance body BR1, BR2, so that the nothing that the flow of the gas flowed in the direction of the arrow is zero
When wind state, the poor current potential of the current potential of the current potential and node D of node C becomes 0V.
Specifically, upstream temperature detecting resistance body UR1, UR2 and downstream temperature detecting resistance body BR1, BR2 are configured to away from heating resistor
Body HR be equidistant and resistance value is also equal.Therefore, it is known that the hair in temperature sensor bridge TSB, with heating resistor HR
Heat is without sight, and when for windless condition, the poor current potential of node C and node D are 0V.
The movement > of < flow sensor
Flow sensor in present embodiment 1 constitutes in the manner described above, in the following, acting referring to Fig.1 to it
It is bright.Firstly, CPU1 via output circuit 3 to the base stage output signal output of transistor Tr (control signal), make current flow through crystalline substance
Body pipe Tr.It is connect in this way, electric current is flowed to from the power ps connecting with the collector of transistor Tr with the emission electrode of transistor Tr
Heating resistor HR.Therefore, heating resistor HR generates heat.Moreover, the gas after the fever heating of origin spontaneous heating resistor body HR
Body heats the resistor body R1 for constituting computer heating control bridge HCB.
At this point, each resistance value of setting resistor body R1~R4, is only above centainly in the gas heated by heating resistor HR
In the case where temperature (for example, 100 DEG C), so that the poor current potential of the node A and node B of computer heating control bridge HCB are 0V.Therefore, example
Such as in the case where being only above certain temperature (for example, 100 DEG C) by the gas after heating resistor HR heating, computer heating control bridge
Poor current potential between the node A and node B of HCB is 0V, which is entered CPU1 via input circuit 2.Moreover, knowing
Not Chu Lai self-heating control bridge HCB poor current potential be 0V CPU1 the output of the base stage of transistor Tr is used for via output circuit 3
The output signal (control signal) for the magnitude of current maintained the statusquo.
On the other hand, in the case where deviateing certain temperature (for example, 100 DEG C) by the gas after heating resistor HR heating,
Generated between the node A and node B of computer heating control bridge HCB be not 0V poor current potential, which is entered via input circuit 2
CPU1.Moreover, identifying the CPU1 for generating the poor current potential from computer heating control bridge HCB via output circuit 3 to transistor Tr's
Output signal (control signal) of the base stage output difference current potential as 0V.
For example, the gas after generation is heated by heating resistor HR is higher than the direction of certain temperature (for example, 100 DEG C)
In the case where poor current potential, the control signal for the electric current reduction that CPU1 flows the base stage output of transistor Tr in transistor Tr
(output signal).In this regard, being lower than certain temperature (for example, 100 DEG C) direction by the gas after heating resistor HR heating generating
Poor current potential in the case where, CPU1 exports the increased control signal of electric current flowed in transistor Tr to the base stage of transistor Tr
(output signal).
Such as with upper type, CPU1 carries out feedback control based on the output signal from computer heating control bridge HCB, so that heating control
Poor current potential between the node A and node B of bridge HCB processed becomes 0V (equilibrium state).Known to as a result, in present embodiment 1
In flow sensor, certain temperature is controlled as by the gas after heating resistor HR heating.
Then, the movement of the flow of the gas in the flow sensor in measurement present embodiment 1 is illustrated.It is first
First, the case where windless condition, is illustrated.Set upstream temperature detecting resistance body UR1, UR2 and downstream temperature detecting resistance body BR1, BR2
Each resistance value so that when the flow of flowing gas is zero in the direction of the arrow windless condition, the section of temperature sensor bridge TSB
The poor current potential of the current potential of the current potential and node D of point C is 0V.
Specifically, upstream temperature detecting resistance body UR1, UR2 and downstream temperature detecting resistance body BR1, BR2 are configured to away from heating resistor
Body HR be equidistant and resistance value is also equal.Therefore, the calorific value in temperature sensor bridge TSB, with heating resistor HR
Unrelated, when for windless condition, the poor current potential of node C and node D become 0V, and the difference current potential (0V) is defeated via input circuit 2
Enter CPU1.Moreover, identifying that the CPU1 identification for being 0V from the poor current potential of temperature sensor bridge TSB is flowed in the direction of the arrow
The flow of gas is zero, indicates that gas flow Q is zero from the flow sensor output in present embodiment 1 via output circuit 3
Output signal.
Then, consider gas the case where flowing in the arrow direction of Fig. 1.In this case, as shown in Figure 1, configuration exists
Upstream temperature detecting resistance body UR1, UR2 of the upstream side of the flow direction of gas is by the gas cooling that flows in the direction of the arrow.Cause
This, the temperature of upstream temperature detecting resistance body UR1, UR2 reduce.In this regard, due to by under the gas flow after heating resistor HR heating
Temperature detecting resistance body BR1, BR2 are swum, so downstream temperature detecting resistance body BR1, BR2 for configuring in the downstream side of the flow direction of gas
Temperature rises.As a result, the balance of temperature sensor bridge TSB crumbles, between the node C and node D of temperature sensor bridge TSB
Generate the poor current potential being not zero.
The difference current potential is entered CPU1 via input circuit 2.Moreover, identifying the difference electricity from temperature sensor bridge TSB
The flow for the gas that the CPU1 identification that position is not zero is flowed in the direction of the arrow is not zero.Then, CPU1 accesses memory 4.?
Being stored in memory 4 makes poor current potential and the corresponding contrast table of gas flow (table), so, have accessed the CPU1 of memory 4
Gas flow Q is calculated according to the contrast table for being stored in memory 4.In this way, the gas flow Q calculated by CPU1 is via output circuit
3 export from the flow sensor in present embodiment 1.As previously discussed it is found that using the flow sensing in present embodiment 1
Device can find out the flow of gas.
The layout of < flow sensor constitutes >
Then, the layout composition of the flow sensor in present embodiment 1 is illustrated.For example, shown in FIG. 1 reality
It applies the flow sensor in mode 1 and is formed in 2 semiconductor chips.Specifically, heating resistor HR, computer heating control bridge HCB
A semiconductor chip, the formation such as CPU1, input circuit 2, output circuit 3 and memory 4 are formed in temperature sensor bridge TSB
In other semiconductor chip.Hereinafter, to heating resistor HR, computer heating control bridge HCB and temperature sensor bridge TSB is formed with
The layout composition of semiconductor chip is illustrated.
Fig. 2 is the layout for indicating the semiconductor chip CHP1 of a part of the composition flow sensor in present embodiment 1
The plan view of composition.Firstly, as shown in Fig. 2, semiconductor chip CHP1 rectangular shaped, gas is from semiconductor chip CHP1's
It flows to the right (arrow direction) in left side.Moreover, as shown in Fig. 2, the back side shape of the semiconductor chip CHP1 of rectangular shaped
At the diaphragm DF for having rectangular shape.Diaphragm DF indicates the thinning caul plate area of the thickness of semiconductor chip CHP1.That is, be formed with every
The thickness in the region of film DF is thinner than the thickness in the region of other semiconductor chip CHP1.
As shown in Fig. 2, in the surface district of the semiconductor chip CHP1 opposite with the rear surface regions for being formed in diaphragm DF in this way
Domain is formed with flow testing division FDU.Specifically, the central portion in flow testing division FDU is formed with heating resistor HR,
The resistor body R1 for constituting computer heating control bridge is formed with around heating resistor HR.Moreover, in the outside of flow testing division FDU
It is formed with the resistor body R2~R4 for constituting computer heating control bridge.Resistor body R1~R4 for being formed in this way controls computer heating control
Bridge.
In particular, the resistor body R1 for constituting computer heating control bridge is formed near heating resistor HR, so can make electricity
Resistance body R1 precisely reflects the temperature of the gas of the fever heating of origin spontaneous heating resistor body HR.
On the other hand, the resistor body R2~R4 for constituting computer heating control bridge is arranged off heating resistor HR, thus it is possible to
It is difficult to the influence by the fever from heating resistor HR.
Therefore, resistor body R1 can be configured to sensitively react the temperature by the gas after heating resistor HR heating,
Also, resistor body R2~R4 is configured to be difficult to the influence by heating resistor HR and is easy resistance value being maintained certain
Value.Therefore, it can be improved the detection accuracy of computer heating control bridge.
Also, upstream temperature detecting resistance body is configured in a manner of clipping the heating resistor HR for being formed in flow testing division FDU
UR1, UR2 and downstream temperature detecting resistance body BR1, BR2.It is surveyed specifically, gas forms upstream in the upstream side in flow arrow direction
The downstream side of warm resistor body UR1, UR2, gas flow arrow direction form downstream temperature detecting resistance body BR1, BR2.
By such as being constituted with upper type, in the case that gas flows in the direction of the arrow, upstream temperature detecting resistance body can be made
The temperature of UR1, UR2 reduce, further, it is possible to rise the temperature of downstream temperature detecting resistance body BR1, BR2.It is configured using this sample loading mode
Flow testing division FDU upstream temperature detecting resistance body UR1, UR2 and downstream temperature detecting resistance body BR1, BR2 and formation temperature sensor
Bridge.
Above-mentioned heating resistor HR, upstream temperature detecting resistance body UR1, UR2 and downstream temperature detecting resistance body BR1, BR2 can pass through
Such as platinum is being formed using the method for sputtering method, CVD (Chemical Vapor Deposition, chemical vapor deposition) method etc.
The semiconductor film of metal film, the polysilicon (polysilicon, polycrystal silicon) of (platinum, platina) etc. etc.
After film, is patterned and formed using the method for ion(ic) etching etc..
Resistor body R1~the R4 and composition temperature of heating resistor HR, composition computer heating control bridge that this sample loading mode is constituted are passed
Upstream temperature detecting resistance body UR1, UR2 and downstream temperature detecting resistance body BR1, BR2 of sensor bridge are respectively connect with wiring WL1, are brought out
To pad (pad, pad) PD1 configured below along semiconductor chip CHP1.
As previously discussed, the semiconductor chip CHP1 of a part of the composition flow sensor in present embodiment 1 is by cloth
Office is constituted.Actual flow sensor includes: to be formed with heating resistor HR, computer heating control bridge HCB and temperature sensor bridge TSB
A semiconductor chip；With another semiconductor core for being formed with CPU1, input circuit 2, output circuit 3 and memory 4 etc.
Piece forms the structure on the substrate of these semiconductor chip actual installations.
Hereinafter, being illustrated to the flow sensor in the present embodiment 1 such as constituted with upper type actual installation.
The actual installation of flow sensor in < embodiment 1 constitutes >
Fig. 3 is the figure for indicating the actual installation of the flow sensor FS1 in present embodiment 1 and constituting, and is to indicate to use resin
The figure of composition before being packaged.In particular, Fig. 3 (a) is the reality for indicating the flow sensor FS1 in present embodiment 1
The plan view constituted is installed.Fig. 3 (b) is the sectional view of Fig. 3 (a) cut off with line A-A, and Fig. 3 (c) is to indicate semiconductor chip
The plan view at the back side of CHP1.
Firstly, as shown in Fig. 3 (a), the flow sensor FS1 in present embodiment 1, which has, for example to be formed by copper product
Lead frame (lead frame) LF.Lead frame LF by constitute outer frame body sealing strip (dam bar, closeouts) DM surround
Inside has chip carrying portion TAB1 and chip carrying portion TAB2.Moreover, equipped with semiconductor core on chip carrying portion TAB1
Piece CHP1, equipped with semiconductor chip CHP2 on chip carrying portion TAB2.
Semiconductor chip CHP1 rectangular shaped is formed with flow testing division FDU in substantially central portion.Moreover, and flow
The wiring WL1 of test section FDU connection is formed on semiconductor chip CHP1, wiring WL1 with along semiconductor chip CHP1's
Multiple pads (pad) the PD1 connection formed on one side.In other words, flow testing division FDU and multiple pad PD1 are connected by wiring WL1
It connects.These pads PD1 and lead (lead) LD1 of lead frame LF is formed in via the metal wire for example formed by gold thread (spun gold)
W1 connection.Be formed in lead frame LF lead LD1 so that be formed in the pad PD2 of semiconductor chip CHP2 for example, by by gold
The metal wire W2 connection that line is formed.
Semiconductor chip CHP2 is formed with by MISFET (Metal Insulator Semiconductor Field
Effect Transistor (metal-insulator-semiconductor field effect transistor)) etc. semiconductor element, wiring formed collection
At circuit.Specifically, forming the collection for constituting CPU1, input circuit 2, output circuit 3 or memory 4 shown in FIG. 1 etc.
At circuit.These integrated circuits are connected with pad PD2, the pad PD3 functioned as external connection terminals.Moreover,
It is formed in the pad PD3 of semiconductor chip CHP2 and is formed in the lead LD2 of lead frame LF for example, by the gold that is formed by gold thread
Belong to line W3 connection.As can be seen, being formed with the semiconductor chip CHP1 of flow testing division FDU and being formed with the half of control circuit
Conductor chip CHP2 is connected and being formed in the lead LD1 of lead frame LF.Wherein, although it is not shown, still partly leading in Fig. 3
The outmost surface of body chip CHP1, as described later, with the stress buffer of the resin with bonding, surface protection, insulation etc. for mesh
, and could be formed with polyimide film (polyimide film).
Then, as shown in Fig. 3 (b), it is formed with chip carrying portion TAB1 in lead frame LF, on chip carrying portion TAB1
Equipped with semiconductor chip CHP1.Semiconductor chip CHP1 passes through jointing material (binding material, bond) ADH1 and chip
Equipped section TAB1 bonding.It is formed with diaphragm DF (thin plate part) at the back side of semiconductor chip CHP1, opposite with diaphragm DF (right
Set) the surface of semiconductor chip CHP1 be formed with flow testing division FDU.On the other hand, it is being present in the lower section of diaphragm DF
The bottom of chip carrying portion TAB1 is formed with opening portion OP1.Wherein, the chip carrying in the lower section for being present in diaphragm DF is illustrated
The bottom of portion TAB1 is formed with the example of opening portion OP1, but the thought of the technology in present embodiment 1 is not limited to this,
It is able to use the lead frame LF for being formed without opening portion OP1.
Also, as shown in Fig. 3 (b), semiconductor chip CHP1 surface (above), other than flow testing division FDU,
It is also formed with the pad PD1 connecting with flow testing division FDU, pad PD1 is by metal wire W1 and is formed in lead frame LF's
Lead LD1 connection.Moreover, lead frame LF is other than semiconductor chip CHP1 also equipped with semiconductor chip CHP2, semiconductor
Chip CHP2 is bonded by jointing material ADH2 and chip carrying portion TAB2.Also, it is formed in the pad of semiconductor chip CHP2
PD2 is connected with the lead LD1 for being formed in lead frame LF by metal wire W2.In addition, being formed in the pad of semiconductor chip CHP2
PD3 and the lead LD2 for being formed in lead frame LF are electrically connected by metal wire W3.
For bonding jointing material ADH1, the bonding semiconductor chip of semiconductor chip CHP1 and chip carrying portion TAB1
The jointing material ADH2 of CHP2 and chip carrying portion TAB2 is able to use for example with epoxy resin (epoxy resin), polyurethane
The thermosetting resin of resin (polyurethane resin) etc. is the jointing material of ingredient, with polyimide resin
The thermoplastic resin of (polyimide resin), acrylic resin (acrylic resin), fluororesin etc. is the viscous of ingredient
Condensation material.
For example, the bonding of semiconductor chip CHP1 and chip carrying portion TAB1, it can be viscous by coating as shown in Fig. 3 (c)
Condensation material ADH1, silver paste etc. are carried out using the jointing material of sheet.Fig. 3 (c) is the back side for indicating semiconductor chip CHP1
Plan view.As shown in Fig. 3 (c), it is formed with diaphragm DF at the back side of semiconductor chip CHP1, is applied in a manner of surrounding diaphragm DF
It is covered with jointing material ADH1.In addition, indicating to apply jointing material in such a way that quadrangle form surrounds diaphragm DF in Fig. 3 (c)
The example of ADH1, but not limited to this, for example, can be applied in a manner of surrounding diaphragm DF with elliptical arbitrary shape
Jointing material ADH1.
Also, in present embodiment 1, as shown in Fig. 3 (a) and Fig. 3 (b), in a part of semiconductor chip CHP1
It is formed with framework FB.Framework FB such as rectangular shaped is formed with opening portion OP (FB) in inside.Framework FB configuration forming
Expose at the flow testing division FDU on the interarea of semiconductor chip CHP1 from opening portion OP (FB), and is configured to be formed in half
Multiple pad PD1 of conductor chip CHP1 expose in the outside of framework FB.
The composition of framework FB is illustrated below.Fig. 4 is the figure for indicating the composition of framework FB.Fig. 4 (a) is to indicate frame
The plan view of the composition of body FB, Fig. 4 (b) are the sectional views of Fig. 4 (a) cut off with line A-A.In addition, Fig. 4 (c) is Fig. 4 (a)
The sectional view cut off with line B-B.
It is found that framework FB rectangular shaped, is formed with opening portion OP (FB) in the inside of frame portion FP as shown in Fig. 4 (a).And
And as shown in Fig. 4 (b), Fig. 4 (c), framework FB is formed with (parallel) wall portion WP parallel with the side of semiconductor chip CHP1.
Moreover, as shown in Fig. 3 (b), by making wall portion WP be close to (close contact bonds) with semiconductor chip CHP1, can with
In the state of semiconductor chip CHP1 contraposition, by framework FB configuration on semiconductor chip CHP1.At this point, framework FB can be with half
Conductor chip CHP1 bonding, or do not bonded with semiconductor chip CHP1.In particular, viscous in framework FB and semiconductor chip CHP1
In the case where conjunction, the effect that can prevent the position of framework FB from deviateing (dislocation) can be obtained.In addition, being formed in the wall of framework FB
As long as at least one side of portion WP and semiconductor chip CHP1 is correspondingly arranged.
Here, the framework FB in present embodiment 1 is characterized in that: the coefficient of elasticity for constituting the material of framework FB is less than structure
At this point of the coefficient of elasticity of material of semiconductor chip CHP1.At this point, coefficient of elasticity refers to framework FB and semiconductor chip CHP1
Spring rate.Spring rate is that the Hooke's law that the intracorporal stress of elasticity and deformation are proportional to one another is expressed as " stress and deformation
It is proportional " form when ratio fixed number (constant).
For example, it is preferable to which the comparison of the coefficient of elasticity of the coefficient of elasticity and semiconductor chip CHP1 of framework FB is at 25 DEG C of temperature
It is compared under (room temperature).In addition, the comparison of coefficient of elasticity can be in the coefficient of elasticity and composition semiconductor chip of framework FB
It is carried out between the coefficient of elasticity of the substrate of CHP1.For example, the feelings formed in the substrate for constituting semiconductor chip CHP1 by monocrystalline silicon
Under condition, the material that coefficient of elasticity is small at room temperature can be utilized to constitute framework FB compared with monocrystalline silicon.
More than, the comparison of the coefficient of elasticity of framework FB and semiconductor chip CHP1 is illustrated, basic concept exists
In the framework FB using the hardness small (softness) compared with semiconductor chip CHP1.So-called hardness herein is able to use such as room
Vickers hardness (Vickers hardness), micro-vickers hardness (micro Vickers hardness) under temperature, Bu Shi are hard
Any one of degree (Brinell hardness) or Rockwell hardness (Rockwell hardness) are compared.
Specifically, compared with semiconductor chip CHP1 the small framework FB of hardness be able to use with PBT resin, ABS resin,
PC resin, nylon resin, PS resin, fluororesin etc. are into for the thermoplastic resin of ingredient, with epoxy resin, phenolic resin etc.
Thermosetting resin, the height with Teflon (registered trademark), polyurethane, fluorine etc. for rubber material, the elastomer of ingredient etc. divided
Molecular material.
Ejection formation (injection molding) is able to use as framework FB, transfer forming process casting resin in mold is infused
It is moulded into shape (mold molding) and forms or utilize the thin-film member of above-mentioned material formation, plate shape part.
In addition, being formed using the high molecular material of thermosetting resin, thermoplastic resin, rubber material, elastomer etc.
Framework FB, can be used as framework FB itself and carry out with the jointing material of adhesiveness using also, capable of also filling glass
The organic filler of inorganic filler, the carbon of glass, silica, mica, talcum etc. etc..
In addition, being rushed by the metal material small with silicon resilience in comparison coefficient to brass, aluminium alloy, copper alloy etc.
Pressure, roll-in processing cast and shape, and can also constitute framework FB.
Flow sensor FS1 in the flow sensor FS1 in present embodiment 1, before being packaged with resin
Actual installation constitute in the manner described above constitute, in the following, to the actual installation of the flow sensor FS1 after being packaged with resin
Composition is illustrated.
Fig. 5 is the figure for indicating the actual installation of the flow sensor FS1 in present embodiment 1 and constituting, and is to indicate to use resin
The figure of composition after being packaged.In particular, Fig. 5 (a) is the practical peace for indicating the flow sensor FS1 in present embodiment 1
Fill the plan view constituted.Fig. 5 (b) is the sectional view of Fig. 5 (a) cut off with line A-A, and Fig. 5 (c) is being cut with line B-B for Fig. 5 (a)
Disconnected sectional view.
In the flow sensor FS1 in present embodiment 1, as shown in Fig. 5 (a), it is being formed in semiconductor chip CHP1
Flow testing division FDU expose from the opening portion OP (FB) for being formed in framework FB in the state of, form semiconductor chip CHP1
The structure (fisrt feature point) that a part and the entirety of semiconductor chip CHP2 are covered by resin M R.That is, in present embodiment 1,
By the region of the semiconductor chip CHP1 other than the region in addition to being formed with flow testing division FDU and the region equipped with framework FB
Whole region unification with semiconductor chip CHP2 is packaged with resin M R.
It is hard that above-mentioned resin M R is able to use the heat such as epoxy resin, phenolic resin (phenol resin, phenol resin)
The property changed resin, polycarbonate (polycarbonate), polyethylene terephthalate (polyethylene
) etc. terephthalate thermoplastic resin, also, the filler of glass and mica etc. can be also mixed into resin.
It can be in the semiconductor chip that will be formed with flow testing division FDU with mold using the encapsulation that resin M R is carried out
It is carried out in the state that CHP1 is fixed, thus it is possible to inhibit the position deviation (dislocation) of semiconductor chip CHP1, and tree can be used
A part and semiconductor chip CHP2 of rouge MR packaged semiconductor CHP1.Therefore, it is passed using the flow in present embodiment 1
Sensor FS1, it is meant that be able to suppress the position deviation of each flow sensor FS1, and semiconductor core can be encapsulated with resin M R
A part of piece CHP1 and the whole region of semiconductor chip CHP2, it is meant that be able to suppress and be formed in semiconductor chip CHP1's
The deviation of the position of flow testing division FDU.
As a result, according to the present embodiment 1, the position of flow testing division FDU of the flow of detection gas can be made each
It is consistent in flow sensor FS1, therefore, the property for being able to suppress the detection gas flow in each flow sensor FS1 can be obtained
The remarkable result of energy deviation.
Then, in the flow sensor FS1 in present embodiment 1, as shown in Fig. 5 (b), the flow detection of exposing is surrounded
The height of framework FB in the two sides of portion FDU or the height of resin M R (packaging body) are higher than half comprising flow testing division FDU
The height (second feature point) on the surface of conductor chip CHP1.That is, the flow testing division FDU exposed surrounds surrounding by framework FB,
And the height for surrounding the framework FB of flow testing division FDU is higher than the height of flow testing division FDU.When with this such embodiment party
When second feature point in formula 1, the flow testing division FDU that the components collision such as can prevent in the installation assembling of component to expose,
Thus it is possible to prevent the breakage for the semiconductor chip CHP1 for being formed with flow testing division FDU.In other words, flow testing division is surrounded
The height of the framework FB of FDU is higher than the height of the flow testing division FDU exposed.Therefore, when component is in contact, firstly, with
Highly high framework FB contact, thus it is possible to the dew for the semiconductor chip CHP1 comprising flow testing division FDU for preventing height low
Appear (face XY) and component contact and to cause semiconductor chip CHP1 to occur damaged.
In particular, configuring framework FB, framework FB in a part of semiconductor chip CHP1 in present embodiment 1
Coefficient of elasticity be less than semiconductor chip CHP1 coefficient of elasticity.In other words, framework FB is by hardness than semiconductor chip CHP1's
The small material of hardness is constituted.Therefore, in the case that component is contacted with framework FB, the change of the smaller framework FB of hardness can be utilized
Shape absorbs impact, therefore, is able to suppress impact and is passed to the semiconductor chip CHP1 configured under framework FB, as a result, can
Enough it is effectively prevented the breakage of semiconductor chip CHP1.
In addition, the height of framework FB and resin M R (packaging body) are higher than the semiconductor chip comprising flow testing division FDU
The height on the surface of CHP1, the height of framework FB can height than resin M R (packaging body) it is high, can also be lower than it,
It can be on one face.
In addition, resin M R invades the inner space of diaphragm DF in order to prevent, and premise is can in present embodiment 1
Obtain the structure that jointing material ADH1 is for example applied in a manner of surrounding the diaphragm DF at the back side for being formed in semiconductor chip CHP1.
Moreover, being formed in the chip of the lower section positioned at diaphragm DF at the back side of semiconductor chip CHP1 as shown in Fig. 5 (b) and Fig. 5 (c)
Opening portion OP1 is formed on the bottom of equipped section TAB1, also, opening is arranged in the resin M R at the back side of covering chip carrying portion TAB1
Portion OP2.
When using the flow sensor FS1 of present embodiment 1 as a result, the inner space of diaphragm DF is through the formation of chip
The opening portion OP1 of the bottom of equipped section TAB1 and be formed in resin M R opening portion OP2 and flow sensor FS1 exterior space
Connection.As a result, it is possible to keep the pressure of the inner space of diaphragm DF and the pressure of the exterior space of flow sensor FS1 equal, energy
Enough stress is inhibited to be applied on diaphragm DF.
Such as with upper type, the flow sensor FS1 in present embodiment 1 is actually installed composition, but in actual stream
In quantity sensor FS1, after with resin M R encapsulation, the sealing strip DM that will constitute the outer frame body of lead frame LF is removed.Fig. 6 is to indicate
The plan view that the actual installation of flow sensor FS1 after eliminating sealing strip DM is constituted.As shown in Figure 6 it is found that passing through cutting
Sealing strip DM can independently take out multiple electric signals from multiple lead LD2.
The manufacturing method > of flow sensor in < present embodiment 1
Flow sensor FS1 in present embodiment 1 is constituted in the manner described above, in the following, manufacturing referring to Fig. 7~Figure 14 to it
Method is illustrated.Fig. 7~Figure 14 indicates the manufacturing process in the section with line A-A cutting in Fig. 5 (a).
Firstly, as shown in fig. 7, preparing the lead frame LF for example formed by copper product.Lead frame LF is integrally formed with
Chip carrying portion TAB1, chip carrying portion TAB2, lead LD1 and lead LD2, the bottom of chip carrying portion TAB1 are formed with opening
Portion OP1.
Then, as shown in figure 8, semiconductor chip CHP1 is carried on chip carrying portion TAB1, in chip carrying portion TAB2
Upper carrying semiconductor chip CHP2.Specifically, semiconductor chip CHP1 is connected to jointing material ADH1 be formed in lead
On the chip carrying portion TAB1 of frame LF.At this point, so as to being formed in the diaphragm DF of semiconductor chip CHP1 and being formed in chip carrying
The mode of the opening portion OP1 connection of the bottom of portion TAB1, semiconductor chip CHP1 is mounted on chip carrying portion TAB1.This
Outside, flow testing division FDU, wiring (not shown) and weldering are formed by common semiconductor fabrication process in semiconductor chip CHP1
Disk PD1.Moreover, for example, by anisotropic etching, in the flow testing division with the surface for being formed in semiconductor chip CHP1
The position at the FDU opposite back side forms diaphragm DF.Bonding material is utilized in addition, being formed on the chip carrying portion TAB2 of lead frame LF
Expect ADH2 also equipped with semiconductor chip CHP2.Common semiconductor fabrication process is advanced with, in semiconductor chip CHP2
Form semiconductor element (not shown), the wiring (not shown), pad PD2, pad PD3 of MISFET etc..
Then, as shown in figure 9, using metal wire (conducting wire) W1 connection be formed in semiconductor chip CHP1 pad PD1 and
It is formed in the lead LD1 of lead frame LF (metal wire bonds (lead connection)).Equally, it is connected using lead LD1 with metal wire W2
It is formed in the pad PD2 of semiconductor chip CHP2, is connected using lead LD2 with metal wire W3 and is formed in semiconductor chip CHP2's
Pad PD3.Metal wire W1~W3 is for example formed by gold thread.
Later, as shown in Figure 10, framework FB is carried on semiconductor chip CHP1.Specifically, being taken to framework FB
It carries, so that built-in (including) has the flow inspection for being formed in semiconductor chip CHP1 being formed in internal opening portion OP (FB)
Survey portion FDU (that is, by surrounding), and the multiple pad PD1 for being formed in semiconductor chip CHP1 are configured in the outside of framework FB.By
Framework FB is mounted on semiconductor chip CHP1 by this while flow testing division FDU and multiple pad PD1 can be made to expose.
At this point, there is the framework FB in present embodiment 1 wall portion WP therefore can make wall portion WP and semiconductor chip
The one side of CHP1 is close to, also, by framework FB configuration on semiconductor chip CHP1.Thereby, it is possible to improve to be mounted in partly to lead
The positioning accuracy of framework FB on body chip CHP1 can reliably make flow testing division FDU from the opening for being formed in framework FB
Portion OP (FB) exposes, and can prevent and the contact of framework FB and pad PD1.
Here, framework FB and semiconductor chip CHP1 can be bonded, can not also bond.Wherein, it carries from inhibition and partly leads
From the perspective of the position of framework FB on body chip CHP1 is deviateed, preferably bond framework FB and semiconductor chip CHP1.
Later, as shown in figure 11, the semiconductor chip CHP1 near pad PD1 in region is formed with resin M R encapsulation
Surface, metal wire W1, lead LD1, metal wire W2, semiconductor chip CHP2 interarea entire surface, metal wire W3 and lead
A part (injection molding (casting) process) of LD2.Specifically, as shown in figure 11, with upper mold UM and lower mold BM across second
Space clips the semiconductor chip CHP1 equipped with the framework FB and lead frame LF equipped with semiconductor chip CHP2.Then, exist
In the case where heating, resin M R is made to flow into the second space, is thus formed near pad PD1 in region with resin M R encapsulation
The surface of semiconductor chip CHP1, metal wire W1, lead LD1, metal wire W2, semiconductor chip CHP2 interarea it is entire
Face, metal wire W3 and lead LD2 a part.At this point, as shown in figure 11, the inner space of diaphragm DF passes through jointing material ADH1
It is isolated with above-mentioned second space, so, when filling second space with resin M R, it can also prevent resin M R intrusion diaphragm DF's
Inner space.
Also, in present embodiment 1, partly leading for flow testing division FDU can will be formed with via framework FB mold
It is carried out in the state that body chip CHP1 is fixed, thus it is possible to which the position of semiconductor chip CHP1 is inhibited to deviate, also, uses resin
A part and semiconductor chip CHP2 of MR packaged semiconductor CHP1.In this case, the stream in 1 according to the present embodiment
The manufacturing method of quantity sensor FS1, it is meant that the position for being able to suppress each flow sensor is deviateed, also, is encapsulated with resin M R
A part of semiconductor chip CHP1 and the whole region of semiconductor chip CHP2, it is meant that be able to suppress and be formed in semiconductor core
The position deviation of the flow testing division FDU of piece CHP1.As a result, according to the present embodiment 1, the flow of detection gas can be made
The position of flow testing division FDU is consistent in each flow sensor, can obtain to be able to suppress and occurs in each flow sensor
The remarkable result of the aberrations in property of detection gas flow.
Here, the manufacturing method of the flow sensor FS1 in present embodiment 1 is characterized in that, by upper mold UM across
Elastomer thin film LAF abuts to the height framework FB higher than being formed in the height of the flow testing division FDU of semiconductor chip CHP1,
And the lead frame LF equipped with semiconductor chip CHP1 is clipped with lower mold BM and upper mold UM.
As a result, according to the present embodiment 1, it is ensured that the flow testing division FDU of semiconductor chip CHP1 and its attached will be formed in
The first space S P1 (confined space) that near field is surrounded, further, it is possible to encapsulate such as partly leading using pad forming region as representative
The surface region of body chip CHP1.In other words, according to the present embodiment 1, the flow for being formed in semiconductor chip CHP1 can be made
Test section FDU and its near zone expose, and encapsulate using pad forming region as the surface of the semiconductor chip CHP1 of representative
Region.
As described above, the function of the essence of framework FB, when upper mold UM is abutted to framework FB, it is ensured that by flow detection
The first space S P1 (confined space) that portion FDU and its near zone surround, in order to realize the function of the essence, in semiconductor core
Structure configured with height of the height higher than flow testing division FDU that framework FB in the case where framework FB, can be obtained on piece CHP1
At.That is, the composition of height of the height of framework FB higher than flow testing division FDU is to ensure from the viewpoint of manufacturing method
Used composition for the purpose of the first space S P1 (confined space) that flow testing division FDU and its near zone are surrounded, utilizes
This composition can make to be formed in flow testing division FDU and its near zone exposes, and encapsulate using pad forming region as representative
Semiconductor chip CHP1 surface region.Further, in present embodiment 1, height is set on semiconductor chip CHP1
The framework FB of specific discharge test section FDU high can protect the opening portion OP from framework FB with this using the grip force of upper mold UM
(FB) the flow testing division FDU exposed.
On the other hand, the composition of the height for the height of framework FB higher than flow testing division FDU, from flow sensor
When from the perspective of the structure of FS1, additionally it is possible to the flow that components collision is exposed when grasping the installation assembling that can prevent component etc.
The structure of test section FDU, thereby, it is possible to obtain can prevent from being formed with flow testing division FDU semiconductor chip CHP1 it is broken
The advantages of damage.In other words, the composition of the height for the height of framework FB higher than flow testing division FDU, being can be from manufacturer
Two sides of the viewpoint of the viewpoint and structure of method play the composition of significant effect.
Also, the framework FB in present embodiment 1 is made of the hardness material smaller than semiconductor chip CHP1, utilizes the structure
At framework FB also has the function of other.Hereinafter, being illustrated to the other function of framework FB.
The manufacturing method of flow sensor FS1 in present embodiment 1 is characterized in that, with upper mold UM and lower mold
When BM clips the lead frame LF equipped with semiconductor chip CHP1, lead frame LF and upper mold equipped with semiconductor chip CHP1
UM and between be provided with framework FB and elastomer thin film LAF.
For example, there are dimensional discrepancys for the thickness of each semiconductor chip CHP1, therefore, in the thickness of semiconductor chip CHP1
In the case where thinner than average thickness, the lead frame equipped with semiconductor chip CHP1 is being clipped with upper mold UM and lower mold BM
When LF, gap is generated, resin M R is possible to be leaked on flow testing division FDU from the gap.
On the other hand, in the case where the thickness of semiconductor chip CHP1 is thicker than average thickness, with upper mold UM and
When lower mold BM clips the lead frame LF equipped with semiconductor chip CHP1, the power for being applied to semiconductor chip CHP1 becomes larger, and deposits
The problem of semiconductor chip CHP1 ruptures.
So in present embodiment 1, in order to prevent to flow caused by the thickness deviation of above-mentioned semiconductor chip CHP1
Resin leakage or the rupture of semiconductor chip CHP1 on test section FDU, were designed in drawing equipped with semiconductor chip CHP1
Wire frame LF and upper mold UM and between be arranged (presence) elastomer thin film LAF and framework FB.As a result, for example, in semiconductor chip
In the case that the thickness of CHP1 is thinner than average thickness, clip with upper mold UM and lower mold BM equipped with semiconductor chip
When the lead frame LF of CHP1, although generating gap, the gap can be filled with elastomer thin film LAF, therefore, can be prevented
Resin leakage on semiconductor chip CHP1.
On the other hand, in the case where the thickness of semiconductor chip CHP1 is thicker than average thickness, with upper mold UM and
When lower mold BM clips the lead frame LF equipped with semiconductor chip CHP1, elastomer thin film LAF and framework FB compare semiconductor core
Piece CHP1 is soft, and therefore, the size of the thickness direction of elastomer thin film LAF and framework FB changes, so that absorbing semiconductor
The thickness of chip CHP1.Even if the thickness of semiconductor chip CHP1 is thicker than average thickness as a result, can also prevent it is required with
On to semiconductor chip CHP1 applied force, as a result, the rupture of semiconductor chip CHP1 can be prevented.
That is, the manufacturing method of the flow sensor in 1 according to the present embodiment, semiconductor chip CHP1 by upper mold UM every
Elastomer thin film LAF and framework FB squeeze.Therefore, it can be inhaled using the thickness change of elastomer thin film LAF and framework FB
Receive the actual installation deviation of component caused by the thickness deviation of semiconductor chip CHP1, jointing material ADH1, lead frame LF.
In particular, in present embodiment 1, it is big in the actual installation deviation of the thickness direction (Z-direction) of component, it can not
It is inclined that semiconductor chip CHP1, jointing material ADH1, the thickness of lead frame LF are absorbed using the thickness change of elastomer thin film LAF
In the case where the actual installation deviation of component caused by difference, also can be than the elastic of semiconductor chip CHP1 by coefficient of elasticity
The deformation of the thickness direction (Z-direction) of the small framework FB of number, to mitigate the grip force for being applied to semiconductor chip CHP1.As a result, root
According to present embodiment 1, can prevent the isolating of semiconductor chip CHP1, notch or crackle etc. is the breakage of representative.
Here, the coefficient of elasticity ratio of elastomer thin film LAF and framework FB are partly led for the actual installation deviation of absorption piece
The small coefficient of elasticity of body chip CHP1 is important.Even if as a result, in the case where the actual installation deviation with component,
Semiconductor chip CHP1 can be applied to effectively to mitigate by the thickness change of elastomer thin film LAF and the deformation of framework FB
The grip force from upper mold UM.In other words, in present embodiment 1, the coefficient of elasticity of elastomer thin film LAF and framework FB are than half
The coefficient of elasticity of conductor chip CHP1 is small, and the combination of the coefficient of elasticity of elastomer thin film LAF and framework FB is free.Example
Such as, the coefficient of elasticity of framework FB can be greatly or more smaller than the coefficient of elasticity of elastomer thin film LAF, or can also phase
Together.Except, the high molecular material using Teflon (registered trademark), fluororesin etc. is able to use as elastomer thin film LAF.
As described above, the other function of the framework FB in present embodiment 1 is: the actual installation deviation of suppression component is drawn
The increase of the grip force from upper mold UM to semiconductor chip CHP1 risen.Moreover, in order to realize the function, in this embodiment party
In formula 1, using the coefficient of elasticity of the framework FB composition smaller than the coefficient of elasticity of semiconductor chip CHP1.As a result, in the reality of component
In the presence of the installation deviation of border, it can also pass through the thickness direction of the coefficient of elasticity framework FB smaller than semiconductor chip CHP1
The deformation of (Z-direction), to mitigate the grip force for being applied to semiconductor chip CHP1.As a result, according to the present embodiment 1, it can prevent
The isolating of semiconductor chip CHP1, notch or crackle etc. are the breakage of representative.
Then, another feature of present embodiment 1 is illustrated.As shown in figure 11, in present embodiment 1, resin
MR also flows into the back side of lead frame LF.Therefore, opening portion OP1 is formed in the bottom of chip carrying portion TAB1 therefore to set sometimes
Rouge MR can flow into the inner space of diaphragm DF from opening portion OP1.
So carrying out researching and designing to the shape for the lower mold BM for clipping lead frame LF in present embodiment 1.Specifically
For, as shown in figure 11, it is put into part (insert die, insertion mould, insert die) IP1 in lower mold BM formation overshooting shape, is used
When upper mold UM and lower mold BM clip lead frame LF, the part IP1 that is put into for being formed in the overshooting shape of lower mold BM is configured to be inserted into
It is formed in the opening portion OP1 of the bottom of chip carrying portion TAB1.It is put into part IP1 as a result, seamlessly in insertion opening portion OP1,
Thus it is possible to prevent resin M R from the inner space of opening portion OP1 intrusion diaphragm DF.That is, in present embodiment 1, in lower die
Tool BM formation overshooting shape is put into part IP1, when carrying out resin-encapsulated, this is put into part IP1 insertion and is formed in chip carrying portion
The opening portion OP1 of the bottom of TAB1.
Also, in present embodiment 1, in the carry out researching and designing in shape for being put into part IP1.Specifically, in this implementation
In mode 1, it is put into the insertion section and the base portion for supporting the insertion section that part IP1 includes insertion opening portion OP1, the section of base portion
Product is formed as bigger than the sectional area of insertion section.Part IP1 is put into as a result, to be formed as being provided with step between insertion section and base portion
The structure in portion, the stage portion are close to the bottom surface of chip carrying portion TAB1.
It is put into part IP1 by constituting in the manner described above, following effects can be obtained.For example, only being inserted by above-mentioned
In the case where entering the shape that portion's composition is put into part IP1, insertion section is inserted into the OP1 of opening portion, therefore, is put into the insertion of part IP1
The diameter in portion is more slightly smaller than the diameter of opening portion OP1.It is therefore contemplated that be only made of insertion section be put into part IP1 in the case where, even if
In the case where the insertion section for being put into part IP1 is inserted into opening portion OP1, between the insertion section being inserted into and opening portion OP1
There are small gaps.In this case, sometimes resin M R from gap intrusion diaphragm DF inner space.
So being put into the base portion that part IP1 is formed as bigger in the sectional area compared with insertion section in present embodiment 1
The upper composition for forming insertion section.In this case, as shown in figure 11, it is inserted into the inside of opening portion OP1 and is put into part IP1's
Insertion section, also, the base portion for being put into part IP1 is close to the bottom surface of chip carrying portion TAB1.As a result, even if being put into part
When generating small gap between the insertion section and opening portion OP1 of IP1, base portion is also firmly pressed in chip carrying portion
The back side of TAB1, thus it is possible to prevent in resin M R intrusion opening portion OP1.That is, being put into part IP1 shape in present embodiment 1
As the composition that insertion section is arranged in the bigger base portion of the sectional area compared with insertion section.So utilizing pedestal by combination
Portion makes that resin M R does not reach this point of opening portion OP1 and the stage portion that is formed between base portion and insertion section is pressed against chip and takes
This point of load portion TAB1, and the inner space that resin M R invades diaphragm DF via opening portion OP1 can be effectively prevented.
Such as with upper type, in present embodiment 1, with upper mold UM and lower mold BM across second space clip equipped with
Carry the lead frame LF of the semiconductor chip CHP1 and semiconductor chip CHP2 of framework FB.Then, in case of heating, make
Resin M R flows into the second space, is formed with the semiconductor chip CHP1's near pad PD1 in region with resin M R encapsulation
Surface, the entire surface of the interarea of metal wire W1, lead LD1, metal wire W2, semiconductor chip CHP2, metal wire W3 and lead LD2
A part.
Then, as shown in figure 12, in the stage of resin M R hardening, take out from upper mold UM and lower mold BM equipped with half
The lead frame LF of conductor chip CHP1 and semiconductor chip CHP2.Thereby, it is possible to manufacture the flow sensor in present embodiment 1
FS1。
In addition, using 80 DEG C or more of high-temperatures in the resin-encapsulated process (injection step) in present embodiment 1
Upper mold UM and lower mold BM, therefore, heat are passed to note from the upper mold UM and lower mold BM being heated in a short time
Enter the resin M R to second space.As a result, the manufacturing method of the flow sensor FS1 in 1 according to the present embodiment, can contract
The heat hardening time of short resin M R.
For example, only implementing to utilize filling as illustrated in the column of invention technical problem to be solved
Resin carry out gold thread (metal wire) fixation in the case where, casting resin without based on heating caused by harden promotion,
So the problem of time until casting resin hardening is elongated, and the productivity in the manufacturing process of flow sensor reduces becomes
It obtains significantly.
In this regard, in the resin-encapsulated process in present embodiment 1, as described above, because using the upper mold being heated
Therefore UM and lower mold BM can transmit heat, energy from the upper mold UM and lower mold BM being heated to resin M R in a short time
Enough shorten the heat hardening time of resin M R.As a result, according to the present embodiment 1, it can be improved the manufacture of flow sensor FS1
Productivity in process.
In present embodiment 1, for example, as shown in figure 11, clip with upper mold UM and lower mold BM equipped with partly leading
It is framed to being arranged between lead frame LF and upper mold UM equipped with semiconductor chip CHP1 when the lead frame LF of body chip CHP1
The example of body FB and elastomer thin film LAF are illustrated.Wherein, the technical idea in present embodiment 1 is without being limited thereto, example
Such as, as shown in figure 13, it is also configured to, does not use elastomer thin film LAF, framework FB is only set, upper mold UM is pressed
In the lead frame LF equipped with semiconductor chip CHP1.
Even if in this case, being also configured to the elasticity system for making the coefficient of elasticity of framework FB less than semiconductor chip CHP1
Number, even if can also utilize the bullet compared with semiconductor chip CHP1 in the presence of the actual installation deviation of component as a result,
The deformation of the thickness direction (Z-direction) of the small framework FB of property coefficient, to mitigate the grip force for being applied to semiconductor chip CHP1.It is tied
Fruit, according to the present embodiment 1, can prevent the isolating of semiconductor chip CHP1, notch or crackle etc. is the breakage of representative.
The serviceability > of < framework
Then, having for the framework FB employed in the flow sensor FS1 in present embodiment 1 is further stated in detail
The property used.
(1) Figure 14 is the figure for indicating to carry out an example of the relevant technologies of resin-encapsulated without using framework FB.Such as Figure 14
It is shown, in the related art, it is configured to not carry out resin-encapsulated to flow testing division FDU, therefore, is provided in upper mold UM and is in
The sealing SL of shape for lugs.Moreover, flow testing division FDU is surrounded by the sealing (encapsulation part) SL, it therefore, can be to surround
The mode of flow testing division FDU forms the first space S P1 (confined space).In other words, in the related art, by upper mold is arranged in
The sealing SL for having UM surrounds flow testing division FDU, thus not by flow testing division FDU resin-encapsulated.
It is such as being constituted in the related technology with upper type, is needing particularly to be arranged in upper mold UM in the close of shape for lugs
Envelope portion SL is designed and (i.e., works hard).That is, needing to prepare to manufacture the flow sensor for exposing flow testing division FDU
The specialized special mold UM in the manufacture of flow sensor.Therefore, it is necessary to prepare to have sealing SL it is special on
Mold UM.
In this regard, in present embodiment 1, for example, as shown in figure 13, framework FB is configured on semiconductor chip CHP1, with
Upper mold UM is pressed with the framework FB mode being close to.At this point, being configured on semiconductor chip CHP1 in present embodiment 1
In the case where having framework FB, the composition of height of the height higher than flow testing division FDU of framework FB can be obtained.That is, by making
The height of framework FB is higher than the height of flow testing division FDU, can necessarily ensure to surround flow testing division FDU and its near zone
The first space S P1 (confined space).Therefore, according to the present embodiment 1, flow testing division FDU and its near zone can be made
Expose, and will be encapsulated by the surface region of the semiconductor chip CHP1 of representative of pad forming region.
In other words, in present embodiment 1, with (including) flow inspection built-in in the opening portion OP (FB) for being set to framework FB
The mode of survey portion FDU configures framework FB on semiconductor chip CHP1, and the height of framework FB is made to be higher than flow testing division FDU
Height.As a result, can necessarily ensure to surround flow inspection in the state that the surface for the upper mold UM being located in hole is flat
The first space S P1 (confined space) of survey portion FDU.That is, according to the present embodiment 1, for example, do not need as the relevant technologies
The special design of upper mold UM setting sealing SL, it will be able to which the first space S P1 for ensuring to surround flow testing division FDU is (close
Close space).
This means that do not need the upper mold UM using special structure using present embodiment 1, be able to use for pair
The whole general upper mold UM (general part) for carrying out resin-encapsulated in hole, it is meant that be able to use one as general part
As upper mold UM come manufacture make flow testing division FDU expose flow sensor FS1.Therefore, according to the present embodiment 1, no
Need to prepare the dedicated upper mold UM of the flow sensor for having descended the special time and (being specifically designed), it can be by extensive
The upper mold UM of the usually used universal architecture in ground, to manufacture the flow sensor for exposing flow testing division FDU.
(2) then, shown in Figure 14 in the related technology, semiconductor chip CHP1 be formed directly into the close of upper mold UM
Envelope portion SL contact.Therefore, grip force is transmitted to semiconductor chip CHP1 from the sealing SL for being formed in upper mold UM.
Here, for example, there are dimensional discrepancys in the thickness of each semiconductor chip CHP1, therefore, in semiconductor chip
In the case that the thickness of CHP1 is thicker than average thickness, clip when with upper mold UM and lower mold BM equipped with semiconductor chip
When the lead frame LF of CHP1, the grip force for being applied to semiconductor chip CHP1 from sealing SL becomes larger, sometimes semiconductor chip CHP1
It ruptures.
In this regard, abutting upper mold UM with direct semiconductor chip CHP1 in present embodiment 1, framework FB is made to be situated between
Between upper mold UM and semiconductor chip CHP1.Moreover, being led using the coefficient of elasticity of framework FB than partly in present embodiment 1
Body chip CHP1 small material.Therefore, framework FB is softer than semiconductor chip CHP1, therefore, upper mold UM is being pressed into framework
In the case where FB, the size of the thickness direction of framework FB changes, so that absorbing the thickness deviation of semiconductor chip CHP1.
Even if the thickness of semiconductor chip CHP1 is thicker than average thickness as a result, can also prevent more than needing to semiconductor chip
CHP1 applies grip force.As a result, according to the present embodiment 1, the rupture of semiconductor chip CHP1 can be prevented.
(3) the sealing SL and semiconductor chip of upper mold UM also, shown in Figure 14 in the related technology, are formed in
The contact area of CHP1 is small.Therefore, concentrate on sealing SL's and semiconductor chip CHP1 by the grip force pressed from upper mold UM
Contact area.Therefore, the pressure for being applied to the contact portion of sealing SL and semiconductor chip CHP1 becomes larger, and partly leads as a result,
Body chip CHP1 becomes easy breakage.In particular, shown in Figure 14 in the related technology, sealing SL and semiconductor chip CHP1
Contact area be formed in the region being overlapped with diaphragm DF plane.This means that the region thin in the thickness of semiconductor chip CHP1
There are the contact areas of sealing SL and semiconductor chip CHP1.The thin region of the thickness of semiconductor chip CHP1 is easy to isolate,
So shown in Figure 14 in the related technology, pressure collection caused by the contact area of sealing SL and semiconductor chip CHP1 are small
In and contact area be configured to caused by area coincidence thin with the thickness of semiconductor chip CHP1 when looking down, semiconductor
Chip CHP1 is easy breakage.
In this regard, in present embodiment 1, for example, as shown in figure 13, the contact area of framework FB and semiconductor chip CHP1
Become larger compared with the relevant technologies shown in Figure 14.Therefore, the grip force of framework FB is applied to from upper mold UM, because of framework FB and half
The contact area of conductor chip CHP1 is larger and is dispersed.Therefore, according to the present embodiment 1, can mitigate via framework FB from
Upper mold UM is applied to the concentration of local of the grip force of semiconductor chip CHP1, and thereby, it is possible to inhibit breaking for semiconductor chip CHP1
Damage.Also, for example, as shown in figure 13, the contact area of framework FB and semiconductor chip CHP1 is not heavy with diaphragm DF when overlooking
It closes.That is, the contact area of framework FB and semiconductor chip CHP1, which are not formed in, is formed with diaphragm DF's in present embodiment 1
The thin region of the thickness of semiconductor chip CHP1, and it is formed in the region of the thickness thickness of other semiconductor chip CHP1.According to
Above situation, according to the present embodiment 1, it is pressed from both sides caused by the increase using the contact area of framework FB and semiconductor chip CHP1
Power is dispersed this point and contact area is formed in the synergistic effect of this point of the region of thickness thickness of semiconductor chip CHP1, Neng Gouyou
Effect ground inhibits the breakage of semiconductor chip CHP1.
(4) in addition, it is as described above, shown in Figure 14 in the related technology, sealing SL and semiconductor chip CHP1's
Contact area is smaller, so the resin injected is released into the first space S P1's (confined space) for surrounding flow testing division FDU
Danger is got higher.
In this regard, the contact area of framework FB and semiconductor chip CHP1 become larger in present embodiment 1, so can drop
It is low to flow into the danger for surrounding the first space S P1 (confined space) of flow testing division FDU.
As described above, according to the present embodiment 1, height and elasticity by using height higher than flow testing division FDU are
The framework FB of coefficient of elasticity of the number less than semiconductor chip CHP1, can obtain serviceability shown in above-mentioned (1)~(4).
1 > of < variation
Then, the variation 1 of the flow sensor FS1 in above embodiment 1 is illustrated.In above embodiment
In 1, for example, as shown in figure 4, framework FB is illustrated with the example of wall portion WP, but in this variation 1, to
The example that framework FB is not provided with wall portion WP is illustrated.
Figure 15 (a) is the plan view for indicating the flow sensor FS1 in this variation 1.In addition, Figure 15 (b) is Figure 15 (a)
With line A-A cut off sectional view, Figure 15 (c) be Figure 15 (a) with line B-B cut off sectional view.
As shown in Figure 15 (b) and Figure 15 (c), wall portion is formed without in the framework FB configured on semiconductor chip CHP1.
Even if using the framework FB for being formed without wall portion in the manner described above, when the height of framework FB is higher than flow testing division
The height of FDU and when the coefficient of elasticity of framework FB is less than the coefficient of elasticity of semiconductor chip CHP1, can obtain and above-mentioned implementation
The identical effect of mode 1.
Wherein, in the framework FB in this variation 1, it is difficult to realize the raising of the positioning accuracy carried out by wall portion, so
Being securely fixed framework FB on semiconductor chip CHP1, framework FB preferably in this variation 1 with partly lead
Body chip CHP1 bonding.At this point, the bonding of framework FB and semiconductor chip CHP1 are for example able to use jointing material, it can also benefit
Framework FB is constituted with the material with adhesive effect.
In addition, for example, the outer dimension of framework FB be greater than semiconductor chip CHP1 outer dimension in the case where, sometimes
Deviate because of the resin pressure in resin-encapsulated process (injection step) position of framework FB.It is preferred, therefore, that such as framework FB
Outer dimension is less than the outer dimension of semiconductor chip CHP1.In other words, can preferably framework FB be formed as when overlook when it is built-in
(including) (surround/is included by semiconductor chip CHP1) in semiconductor chip CHP1.In turn, in other words, the shape of framework FB
Size can be smaller than the outer dimension on the perspective plane of the upper surface of semiconductor chip CHP1.By constituting in the manner described above, can press down
Deviate the position of framework FB caused by resin pressure in resin-encapsulated process processed.
Figure 16 is the figure for indicating a section of the flow sensor in this variation 1.As shown in figure 16 it is found that framework FB
Built-in (including) (surround/is included) in semiconductor chip CHP1 by semiconductor chip CHP1.Specifically, being enabled in Figure 16
In the case that the width of semiconductor chip CHP1 is L1, the width of framework is L2, L1 > L2 relationship in all interfaces
In the case where establishment, framework FB can built-in (including) (surround/included by semiconductor chip CHP1) in semiconductor chip CHP1.
2 > of < variation
Then, the variation 2 of the flow sensor FS1 in above embodiment 1 is illustrated.In above embodiment
In 1, for example, being carried on chip carrying portion TAB1 via jointing material (adhesive) ADH1 as shown in Fig. 5 (b), Fig. 5 (c)
Semiconductor chip CHP1 on configure framework FB example be illustrated.In this variation 2, in semiconductor chip CHP1 and
Example inserted with plate-like structure PLT between lead frame LF is illustrated.
Figure 17 is the plan view for indicating the structure of the flow sensor in this variation 2 before resin-encapsulated.Figure 18 is Figure 17
With line A-A cut off sectional view, Figure 19 be Figure 17 with line B-B cut off sectional view.
As shown in figure 17 it is found that flow sensor FS1 in this variation 2, throughout semiconductor chip CHP1 lower layer and
The lower layer of semiconductor chip CHP2 forms plate-like structure PLT.Plate-like structure PLT such as rectangular shaped has to work as and bow
Apparent time includes the outer dimension of (surrounding) semiconductor chip CHP1 and semiconductor chip CHP2.
Specifically, as shown in Figure 18, Figure 19, in the lead frame comprising chip carrying portion TAB1 and chip carrying portion TAB2
Plate-like structure PLT is configured on LF.Plate-like structure PLT is for example bonded using jointing material ADH3 and lead frame LF, still
Also creamy material is able to use to be bonded.Moreover, via jointing material ADH1 equipped with semiconductor on plate-like structure PLT
Chip CHP1, also, via jointing material ADH2 equipped with semiconductor chip CHP2.At this point, plate-like structure PLT is by metal material
It in the case that material is formed, can also be connect by metal wire W1 with semiconductor chip CHP1, also, pass through metal wire W2 semiconductor
It is connect with chip CHP2.In addition, can also mounting condenser, temperature-sensitive other than above-mentioned plate-like structure PLT on lead frame LF
The component of resistance etc..
Above-mentioned plate-like structure PLT is improved mainly as the rigidity of flow sensor FS1, from the slow of external impact
Rush materials serve effect.Also, in the case where plate-like structure PLT is constructed from a material that be electrically conducting, with semiconductor chip CHP1 (weldering
Disk PD1), semiconductor chip CHP2 (pad PD2) electrical connection, can be used in the supply of earthing potential (reference potential), also can
It is grounded the stabilisation of current potential.
Plate-like structure PLT can be by such as PBT resin, ABS rouge, PC resin, nylon resin, PS resin, PP resin, fluorine
The thermosetting resin of thermoplastic resin, epoxy resin, phenolic resin, the polyurethane resin of resin etc. etc. is constituted.In the feelings
Under condition, plate-like structure PLT can be mainly as protecting semiconductor chip CHP1, semiconductor chip CHP2 not by from external punching
The padded coaming for the influence hit and function.
On the other hand, plate-like structure PLT can by the metal material to ferroalloy, aluminium alloy or copper alloy etc. into
Row punch process and formed, can also be formed by glass material.In particular, forming plate-like structure PLT's by metal material
In the case of, it can be improved the rigidity of flow sensor FS1.Also, lead plate-like structure PLT with semiconductor chip CHP1, partly
Plate-like structure PLT, can be also used for the supply of ground potential, the stabilisation of ground potential by body chip CHP2 electrical connection.
In the flow sensor FS1 in the variation 2 constituted in the manner described above, for example, as shown in Figure 17~Figure 19,
Framework FB is configured on semiconductor chip CHP1.Moreover, the inside of framework FB is formed with opening portion OP (FB), it is formed in semiconductor
The flow testing division FDU of chip CHP1 exposes from opening portion OP (FB).In this variation 2, by the height for making framework FB
Height higher than flow testing division FDU and the coefficient of elasticity of framework FB is made to be less than semiconductor chip CHP1, can also obtain with it is upper
State the identical effect of embodiment 1.
(embodiment 2)
In above embodiment 1, for example, enumerating as shown in Fig. 5 (b) with semiconductor chip CHP1 and semiconductor
It is illustrated for the flow sensor FS1 of the double-chip structure of chip CHP2, but technical idea of the invention is not limited to
This, for example, can also apply to includes a semiconductor for being integrally formed with flow testing division and control unit (control circuit)
The flow sensor of the single chip architecture of chip.In present embodiment 2, enumerates and technical idea of the invention is applied to single
It is illustrated in case where the flow sensor of chip architecture.
The actual installation of flow sensor in < embodiment 2 constitutes >
Figure 20 is the figure for indicating the actual installation of the flow sensor FS2 in present embodiment 2 and constituting, and is to indicate to use resin
The figure of composition before encapsulation.In particular, Figure 20 (a) is the actual installation structure for indicating the flow sensor FS2 in present embodiment 2
At plan view.Figure 20 (b) is the sectional view of Figure 20 (a) cut off with line A-A, and Figure 20 (c) is being cut with line B-B for Figure 20 (a)
Disconnected sectional view.In addition, Figure 20 (d) is the plan view for indicating the back side of semiconductor chip CHP1.
Firstly, as shown in Figure 20 (a), the flow sensor FS2 in present embodiment 2, which has, to be for example made of copper product
Lead frame LF.Lead frame LF has chip carrying portion TAB1 in the inside surrounded by the sealing strip DM for constituting outer frame body.Moreover,
Equipped with semiconductor chip CHP1 on chip carrying portion TAB1.
Semiconductor chip CHP1 rectangular in shape is formed with flow testing division FDU in substantially central portion.Moreover, with stream
Amount test section FDU connection wiring WL1A be formed on semiconductor chip CHP1, wiring WL1A be formed in semiconductor chip
The control unit CU connection of CHP1.Control unit CU is formed with by MISFET (Metal Insulator Semiconductor
Field Effect Transistor) etc. semiconductor element, wiring formed integrated circuit.Specifically, being formed with composition
The integrated circuit of CPU1, input circuit 2, output circuit 3 or memory 4 shown in FIG. 1 etc..Moreover, control unit CU passes through
Wiring WL1B is connect with multiple pad PD1, the pad PD2 of the long side formation along semiconductor chip CHP1.In other words, flow detection
Portion FDU is connected with control unit CU by wiring WL1A, and control unit CU is connect by wiring WL1B with pad PD1, pad PD2.Weldering
Disk PD1 is connect via the metal wire W1 for example formed by gold thread with the lead LD1 for being formed in lead frame LF.On the other hand, pad
PD2 is connect via the metal wire W2 for example formed by gold thread with the lead LD2 for being formed in lead frame LF.Furthermore, it is possible to partly leading
In the outmost surface (element forming face) of body chip CHP1, with binder resin stress buffer function, surface protecting function or
Polyimide film is formed with for the purpose of person's insulation protection function etc..
Lead LD1 and lead LD2 is configured in a manner of extending in the orthogonal X-direction of the flowing Y-direction with gas, is had
Carry out the function of the input and output of external circuit.On the other hand, the Y-direction along lead frame LF is formed with prominent lead PLD.This is prominent
Lead PLD is connect with chip carrying portion TAB1 out, but is not connect with pad PD1, the PD2 for being formed in semiconductor chip CHP1.
That is, prominent lead PLD is different from the lead LD1, lead LD2 functioned as above-mentioned input and output terminal.
Here, in present embodiment 2, with the flowing side of the long side of the semiconductor chip CHP1 of rectangular in shape and gas
The mode parallel to (arrow direction, Y-direction) is on chip carrying portion TAB1 equipped with semiconductor chip CHP1.Moreover, half
The long side of conductor chip CHP1 is configured with multiple pad PD1, PD2 along the long side direction.These multiple pad PD1's is respective and multiple
Lead LD1 each by the multiple metal wire W1 connections configured in a manner of the long side across semiconductor chip CHP1.Equally, more
The respective and multiple lead LD2's of a pad PD2 is more each by what is configured in a manner of the long side across semiconductor chip CHP1
A metal wire W2 connection.Like this, multiple pad PD1, PD2 are configured along the long side of the semiconductor chip CHP1 of rectangular shape,
So can make more compared with the case where configuring multiple pad PD1, PD2 on the short side direction in semiconductor chip CHP1
Pad PD1, PD2 are formed in semiconductor chip CHP1.In particular, semiconductor chip CHP1 not only forms control in present embodiment 2
Portion CU processed is also formed with flow testing division FDU together, so, by arranging multiple pad PD1, PD2 in the long side direction, energy
Enough efficiently use the region on semiconductor chip CHP1.
Also, in present embodiment 2, framework FB is formed in a part of semiconductor chip CHP1.Framework FB
Such as rectangular shaped, opening portion OP (FB) is formed in inside.Framework FB is configured to be formed in the master of semiconductor chip CHP1
Flow testing division FDU on face exposes from opening portion OP (FB), and is configured to be formed in multiple pads of semiconductor chip CHP1
PD1 exposes to the outside of framework FB.
Then, as shown in Figure 20 (b), it is formed with chip carrying portion TAB1 in lead frame LF, in chip carrying portion TAB1
On equipped with semiconductor chip CHP1.Semiconductor chip CHP1 is bonded by jointing material ADH1 and chip carrying portion TAB1.
The back side of semiconductor chip CHP1 is formed with diaphragm DF (thin plate part), on the surface of the semiconductor chip CHP1 opposite with diaphragm DF
It is formed with flow testing division FDU.On the other hand, the bottom for the chip carrying portion TAB1 for being present in the lower section of diaphragm DF is formed with out
Oral area OP1.
Also, as shown in Figure 20 (b), semiconductor chip CHP1 surface (above), in addition to flow testing division FDU it
Outside, it is also formed with pad PD1, pad PD2, pad PD1 connects via metal wire W1 with the lead LD1 for being formed in lead frame LF
It connects.Equally, pad PD2 is connect via metal wire W2 with the lead LD2 for being formed in lead frame LF.Moreover, semiconductor chip CHP1
It is upper to be configured with framework FB.Framework FB is formed with opening portion OP (FB), and flow testing division FDU exposes from opening portion OP (FB).
In addition, lead frame LF is formed with chip carrying portion TAB1 and prominent lead PLD, chip carrying as shown in Figure 20 (c)
Portion TAB1 and prominent lead PLD are formed as one.Pass through jointing material ADH1 and semiconductor core on chip carrying portion TAB1
Piece CHP1 bonding.It is formed with diaphragm DF (thin plate part) at the back side of semiconductor chip CHP1, in the semiconductor opposite with diaphragm DF
The surface of chip CHP1 is formed with flow testing division FDU.On the other hand, in the chip carrying portion for the lower section for being present in diaphragm DF
The bottom of TAB1 is formed with opening portion OP1.In addition, on the surface of semiconductor chip CHP1 with arranged side by side with flow testing division FDU
Mode is formed with control unit CU.Similarly, framework FB is configured on semiconductor chip CHP1.Framework FB is formed with opening portion OP
(FB), flow testing division FDU exposes from opening portion OP (FB).
Bonding semiconductor chip CHP1 and chip carrying portion TAB1 jointing material ADH1 be able to use such as epoxy resin,
The thermoplastic resin of thermosetting resin, polyimide resin, the acrylic resin of polyurethane resin etc. etc..
For example, the bonding of semiconductor chip CHP1 and chip carrying portion TAB1 can the mode as shown in Figure 20 (d) pass through
Jointing material ADH1 is applied to carry out.Figure 20 (d) is the plan view for indicating the back side of semiconductor chip CHP1.Such as Figure 20 (d) institute
Show, is formed with diaphragm DF at the back side of semiconductor chip CHP1, applies jointing material ADH1 in a manner of surrounding diaphragm DF.This
Outside, in Figure 20 (c), the example that jointing material ADH1 is applied in a manner of surrounding diaphragm DF for quadrangle form is indicated, but
It is not limited to this, for example, it is also possible to apply jointing material in a manner of surrounding diaphragm DF with the arbitrary shape of elliptical shape etc.
ADH1。
In the flow sensor FS2 in present embodiment 2, flow sensor FS2's before being packaged with resin
Actual installation composition is constituted as described above, in the following, constituting to the actual installation of the flow sensor FS2 after resin-encapsulated
It is illustrated.
Figure 21 is the figure for indicating the actual installation of the flow sensor FS2 in present embodiment 2 and constituting, and is to indicate to use resin
The figure of composition after encapsulation.In particular, Figure 21 (a) is the actual installation structure for indicating the flow sensor FS2 in present embodiment 2
At plan view.Figure 21 (b) is the sectional view of Figure 21 (a) cut off with line A-A, and Figure 21 (c) is being cut with line B-B for Figure 21 (a)
Disconnected sectional view.
In the flow sensor FS2 in present embodiment 2, as shown in Figure 21 (a), it is being formed in semiconductor chip CHP1
Flow testing division FDU expose from the opening portion OP (FB) for being formed in framework FB in the state of, form semiconductor chip CHP1
The structure that a part is covered by resin M R.That is, in present embodiment 2, with the unified encapsulation of resin M R in addition to being formed with flow inspection
The region of semiconductor chip CHP1 except the region of survey portion FDU and the region equipped with framework FB.
The encapsulation carried out using resin M R, can be will be in the semiconductor core for being formed with flow testing division FDU with mold
It is carried out in the state that piece CHP1 is fixed, thus it is possible to inhibit the position of semiconductor chip CHP1 to deviate, further, it is possible to utilize tree
A part of rouge MR packaged semiconductor CHP1.It means that the flow sensor FS2 in 2 according to the present embodiment, it can
The position of each flow sensor FS2 is inhibited to deviate, further, it is possible to using a part of resin M R packaged semiconductor CHP1,
It is meant to inhibit to be formed in the deviation of the position of the flow testing division FDU of semiconductor chip CHP1.
As a result, according to the present embodiment 2, the position of the flow testing division FDU of the flow of detection gas can be made in each stream
It is consistent in quantity sensor FS1, therefore, the performance for being able to suppress the detection gas flow in each flow sensor FS2 can be obtained
The significant effect deviated.
Then, in the flow sensor FS1 in present embodiment 2, as shown in Figure 21 (a), the flow inspection of exposing is surrounded
The height of framework FB in the two sides of survey portion FDU or the height of resin M R (packaging body), which are higher than, includes flow testing division FDU's
The height on the surface of semiconductor chip CHP1.That is, the flow testing division FDU exposed surrounds surrounding by framework FB, and surround flow
The height of the framework FB of test section FDU is higher than the height of flow testing division FDU.Using the present embodiment constituted in the manner described above
2, the flow testing division FDU that components collision is exposed when can prevent the installation of component from assembling etc., thus it is possible to prevent from being formed with stream
Measure the breakage of the semiconductor chip CHP1 of test section FDU.In other words, the height for surrounding the framework FB of flow testing division FDU is higher than
The height of the flow testing division FDU of exposing.Therefore, when component is in contact, firstly, the framework FB high with height is contacted, institute
With, the exposed surface (face XY) and component contact of the semiconductor chip CHP1 comprising flow testing division FDU that height can be prevented low,
Semiconductor chip CHP1 occurs damaged.
In particular, configuring framework FB, framework FB in a part of semiconductor chip CHP1 in present embodiment 2
Coefficient of elasticity be less than semiconductor chip CHP1 coefficient of elasticity.In other words, framework FB is by hardness than semiconductor chip CHP1's
The small material of hardness is constituted.Therefore, in the case where component and framework FB contact, it can utilize the smaller framework FB's of hardness
Deformation absorbs impact, therefore, is able to suppress impact and is passed to the semiconductor chip CHP1 configured under framework FB, as a result,
The breakage of semiconductor chip CHP1 can be effectively prevented.
In addition, resin M R invades the inner space of diaphragm DF in order to prevent, and premise is can in present embodiment 2
Obtain the composition that jointing material ADH1 is for example applied in a manner of surrounding the diaphragm DF at the back side for being formed in semiconductor chip CHP1.
Moreover, being formed in the core of the lower section positioned at diaphragm DF at the back side of semiconductor chip CHP1 as shown in Figure 21 (b) and Figure 21 (c)
The bottom of piece equipped section TAB1 is formed with opening portion OP1, also, the resin M R setting at the back side of covering chip carrying portion TAB1
Opening portion OP2.
As a result, when using the flow sensor FS2 of present embodiment 2, the inner space of diaphragm DF is through the formation of core
The opening portion OP1 of the bottom of piece equipped section TAB1 and be formed in resin M R opening portion OP2 and flow sensor FS1 it is external empty
Between be connected to.As a result, it is possible to keep the pressure of the inner space of diaphragm DF and the pressure of the exterior space of flow sensor FS2 equal,
Stress is able to suppress to be applied on diaphragm DF.
Such as with upper type, the flow sensor FS2 in present embodiment 2 is actually installed composition, but in actual stream
In quantity sensor FS2, after with resin M R encapsulation, the sealing strip DM that will constitute the outer frame body of lead frame LF is removed.Figure 22 is table
Show the plan view that the actual installation of the flow sensor FS2 after eliminating sealing strip DM is constituted.As shown in figure 22 it is found that by cutting
Disconnected sealing strip DM, can independently take out multiple electric signals from multiple lead LD1 and lead LD2.
The manufacturing method > of flow sensor in < present embodiment 2
Flow sensor FS2 in present embodiment 2 is constituted in the manner described above, in the following, making referring to Figure 23~Figure 26 to it
The method of making is illustrated.Figure 23~Figure 26 indicates the manufacturing process in the section cut off with line B-B in Figure 21 (a).
Firstly, as shown in figure 23, preparing the lead frame LF for example formed by copper product.Lead frame LF is integrally formed with
Chip carrying portion TAB1, prominent lead PLD, the bottom of chip carrying portion TAB1 is formed with opening portion OP1.
Then, as shown in figure 24, semiconductor chip CHP1 is carried on chip carrying portion TAB1.Specifically, with bonding
Semiconductor chip CHP1 is connected on the chip carrying portion TAB1 for being formed in lead frame LF by materials A DH1.At this point, semiconductor core
Piece CHP1 is mounted on chip carrying portion TAB1, so that being formed in the diaphragm DF of semiconductor chip CHP1 and being formed in chip carrying
The opening portion OP1 of the bottom of portion TAB1 is connected to.In addition, being formed in semiconductor chip CHP1 by common semiconductor fabrication process
Flow testing division FDU, control unit CU, wiring (not shown) and pad (not shown).Moreover, for example, by anisotropic etching,
Diaphragm DF is formed in the position at the back side opposite with the flow testing division FDU on surface for being formed in semiconductor chip CHP1.
Then, (do not schemed with the pad that metal wire connection (metal wire bonding) (not shown) is formed in semiconductor chip CHP1
Show) and it is formed in the lead (not shown) of lead frame LF.Metal wire (not shown) is for example formed by gold thread.
Later, framework FB is carried on semiconductor chip CHP1.Specifically, framework FB carry at be formed in it is internal
Built-in (including) has the flow testing division FDU for being formed in semiconductor chip CHP1 in opening portion OP (FB), and in the outer of framework FB
Side is configured with the control unit CU for being formed in semiconductor chip CHP1.Thereby, it is possible to reveal flow testing division FDU and control unit CU
Out, and by framework FB it is mounted on semiconductor chip CHP1.
Then, as shown in figure 25, across elastomer thin film LAF and second space is formed with upper mold UM and lower mold BM
(hole) clip and then in case of heating, make equipped with the lead frame LF of semiconductor chip CHP1 for carrying framework FB
Resin M R flows into the second space, is formed with the semiconductor chip CHP1's near control unit CU in region with resin M R encapsulation
Surface, metal wire (not shown), a part for protruding lead PLD.
In the manufacturing method of the flow sensor FS2 in this present embodiment 2, for example, as shown in figure 25, making upper mold
Tool UM abuts to height of the height higher than the flow testing division FDU for being formed in semiconductor chip CHP1 across elastomer thin film LAF
Framework FB, also, clip the lead frame LF equipped with semiconductor chip CHP1 with lower mold BM and upper mold UM.
As a result, according to the present embodiment 2, it is ensured that the flow testing division FDU of semiconductor chip CHP1 and its attached will be formed in
The first space S P1 (confined space) that near field is surrounded, further, it is possible to encapsulate (closing) for example using control unit forming region as generation
The surface region of the semiconductor chip CHP1 of table.In other words, according to the present embodiment 2, it can make to be formed in semiconductor chip
The flow testing division FDU and its near zone of CHP1 exposes, and encapsulates using control unit forming region as the semiconductor core of representative
The surface region of piece CHP1.
Also, in the manufacturing method of the flow sensor FS2 in present embodiment 2, with upper mold UM and lower mold
When BM clips the lead frame LF equipped with semiconductor chip CHP1, make framework FB and elastomer thin film LAF between equipped with partly leading
The lead frame LF and upper mold UM of body chip CHP1 and between.
Even if as a result, in the presence of the actual installation deviation of component also semiconductor can be compared by coefficient of elasticity
The deformation of the thickness direction (Z-direction) of chip CHP1 small framework FB, to mitigate the grip force for being applied to semiconductor chip CHP1.Knot
Fruit, according to the present embodiment 2, can prevent the isolating of semiconductor chip CHP1, notch or crackle etc. is the breakage of representative.
Then, as shown in figure 26, in the stage of resin M R hardening, take out from upper mold UM and lower mold BM equipped with half
The lead frame LF of conductor chip CHP1.Thereby, it is possible to manufacture the flow sensor FS2 in present embodiment 1.In the manner described above
In flow sensor FS2 in the present embodiment 2 of manufacture, effect identical with above embodiment 1 can be obtained.
More than, the invention that the present inventor proposes specifically is illustrated based on the embodiment, but the present invention is not
It is limited to above embodiment, is able to carry out various changes within the scope of its spirit, this is self-evident.
In addition, the flow sensor illustrated in above embodiment can also be formed with partly leading for flow testing division FDU
The a part on the surface (above) of body chip CHP1 is formed with polyimide film, silicon nitride film, polysilicon film, TEOS (Si
(OC2H5)4) be raw material silicon oxide film etc. film.As a result, at one of the surface for the semiconductor chip CHP1 being close to resin
In point, the raising of adhesive strength can be realized.
Polyimide film can be formed for example and applying to semiconductor chip CHP1, implement photoetching technique as needed
It is patterned with etching technique.Silicon nitride film, polysilicon film, silicon oxide film can be utilized with plasma CVD method, decompression
CVD method, atmospheric pressure cvd method etc. are chemical vapor deposition method, chemical vapor coating (deposition) method, chemical vapor deposition, physics of representative
Chemical vapour deposition or physical vapor deposition are formed.
These films being formed on semiconductor chip CHP1 can prevent from being formed in the silicon for constituting semiconductor chip CHP1
(Si) film thickness of the silicon oxide film on increases, and can be improved the adhesiveness of resin M R and semiconductor chip CHP1.
These films form a film at least part of the semiconductor chip CHP1 covered by resin M R.
In addition, being set using polyimide film, silicon nitride film, polysilicon film, TEOS as the film thickness of the silicon oxide film of raw material etc.
Be about 1 μm~about 120 μm, but be not limited to the film thickness, among the surface region of semiconductor chip CHP1 by resin
The region of MR covering forms these films.
The flow sensor being illustrated in the above-described embodiment is the device for measuring the flow of gas, but for
Specific gaseous species are simultaneously not limited, and can be widely applied for measurement air, LP gas, carbon dioxide (CO2Gas), chlorine
The device of the flow of the arbitrary gas of fluorocarbon gases (Freon gas) etc..
In addition, in the above-described embodiment, the flow sensor of the flow of measurement gas is illustrated, but this hair
The thought of bright technology is without being limited thereto, can be widely applied in a part dew for making the semiconductor element of humidity sensor etc.
In the semiconductor device for carrying out resin-encapsulated in the state of out.
Industrial utilizability
The present invention can widely be used in the manufacturing industry of the semiconductor device such as manufacturing flow sensor.
Description of symbols
1 CPU
2 input circuits
3 output circuits
4 memories
ADH1 jointing material (adhesive)
ADH2 jointing material (adhesive)
ADH3 jointing material (adhesive)
Mold under BM
The downstream BR1 temperature detecting resistance body
The downstream BR2 temperature detecting resistance body
CHP1 semiconductor chip
CHP2 semiconductor chip
CU control unit
DF diaphragm
DM sealing strip
FB framework
FDU flow testing division
FP frame portion
FS1 flow sensor
FS2 flow sensor
HCB computer heating control bridge
HR heating resistor
IP1 is put into part (insert die, insertion mould, insert die)
LAF elastomer thin film
LD1 lead
LD2 lead
LF lead frame
MR resin
The opening portion OP1
The opening portion OP2
The opening portion OP (FB)
PD1 pad (pad)
PD2 pad
PD3 pad
PLD protrudes lead
PLT plate-like structure
PS power supply
Q gas flow
R1 resistor body
R2 resistor body
R3 resistor body
R4 resistor body
SL sealing
The first space SP1
TAB1 chip carrying portion
TAB2 chip carrying portion
Tr transistor
TSB temperature sensor bridge
UM upper mold
The upstream UR1 temperature detecting resistance body
The upstream UR2 temperature detecting resistance body
Vref1 reference voltage
Vref2 reference voltage
W1 metal wire
W2 metal wire
W3 metal wire
WL1 wiring
WL1A wiring
WL1B wiring
WP wall portion
Attached drawing is explained
Fig. 1
2 input circuits
3 output circuits
4 memories
Claims (13)
1. a kind of flow sensor, it is characterised in that:
It is configured in the first chip carrying portion with the first semiconductor chip in the flow testing division that thin plate part is formed,
The flow sensor contains framework, which is mounted in the first semiconductor core on piece and has described at least exposing
The opening portion of flow testing division, the framework material shape smaller than the coefficient of elasticity of first semiconductor chip by coefficient of elasticity
At,
Expose in the flow testing division for being formed in the first semiconductor core on piece from the opening portion of the framework
Under state, a part of first semiconductor chip is encapsulated by the packaging body containing resin,
The framework with the opening portion have at least one side of first semiconductor chip it is parallel and with
The wall portion that the side is close to,
Constitute the frame portion of the framework and the thin plate part be configured to it is not be overlapped when overlooking.
2. flow sensor as described in claim 1, it is characterised in that:
First semiconductor chip also has the control circuit portion for controlling the flow testing division.
3. flow sensor as described in claim 1, which is characterized in that be also equipped with:
Second chip carrying portion；With
The second semiconductor chip in second chip carrying portion is configured,
Second semiconductor chip has the control circuit portion for controlling the flow testing division,
Second semiconductor chip is encapsulated by the packaging body.
4. flow sensor as described in claim 1, it is characterised in that:
The framework and first semiconductor chip with the opening portion are bonding.
5. flow sensor as described in claim 1, it is characterised in that:
The framework with the opening portion is not bonded with first semiconductor chip.
6. flow sensor as described in claim 1, it is characterised in that:
Polyimide film, silicon nitride film, polysilicon film or oxidation are formed at least part of first semiconductor chip
Silicon fiml.
7. flow sensor as described in claim 1, it is characterised in that:
In the arbitrary section containing the flow testing division exposed, the height of the framework or the packaging body, which is higher than, to be contained
The height of first semiconductor chip of the flow testing division.
8. flow sensor as described in claim 1, it is characterised in that:
Inserted with plate-like structure between first chip carrying portion and first semiconductor chip.
9. a kind of flow sensor, it is characterised in that:
It is configured in the first chip carrying portion with the first semiconductor chip in the flow testing division that thin plate part is formed,
The flow sensor contains framework, which is mounted in the first semiconductor core on piece and has described at least exposing
The opening portion of flow testing division, in the case where being mounted in the first semiconductor core on piece, height is higher than described the framework
The height of flow testing division,
Expose in the flow testing division for being formed in the first semiconductor core on piece from the opening portion of the framework
Under state, a part of first semiconductor chip is encapsulated by the packaging body containing resin,
The framework with the opening portion have at least one side of first semiconductor chip it is parallel and with
The wall portion that the side is close to,
Constitute the frame portion of the framework and the thin plate part be configured to it is not be overlapped when overlooking.
10. a kind of manufacturing method of flow sensor, wherein the flow sensor is that flow described in claim 1 or 9 passes
The manufacturing method of sensor, the flow sensor is characterised by comprising:
(a) prepare the process with the substrate of first chip carrying portion；
(b) prepare the process of first semiconductor chip；
(c) process of first semiconductor chip is carried in first chip carrying portion；
(d) after (c) process, so that the flow testing division is contained in the opening portion for being formed in the framework,
The wall portion is close to at least one side of first semiconductor chip, and constitute the frame portion of the framework with it is described thin
The nonoverlapping mode in plate portion, in the process that the first semiconductor core on piece configures the framework；With
(e) after (d) process, expose the flow testing division for being formed in first semiconductor chip, and benefit
The process for being encapsulated a part of first semiconductor chip with the packaging body, wherein
(e) process includes:
(e1) prepare the process of upper mold and lower mold；
(e2) it after (e1) process, by making the bottom surface of the upper mold be tightly attached to the framework, is formed described in surrounding
First space of flow testing division, and clipped across second space equipped with described using the upper mold and the lower mold
The process of the substrate of semiconductor chip；With
(e3) after (e2) process, the process that makes the resin flow into the second space.
11. the manufacturing method of flow sensor as claimed in claim 10, it is characterised in that:
First semiconductor chip also has the control circuit portion for controlling the flow testing division.
12. the manufacturing method of flow sensor as claimed in claim 10, which is characterized in that further include:
(f) prepare second semiconductor core with the control circuit portion for controlling the flow testing division before (c) process
The process of piece,
The substrate prepared in (a) process has the second chip carrying portion,
In (c) process, by second semiconductor-chip-mounting in second chip carrying portion,
In (e) process, second semiconductor chip is encapsulated using the packaging body,
In (e2) process, by making the bottom surface of the upper mold be tightly attached to the framework, is formed and surround the flow inspection
First space in survey portion, and clipped across the second space equipped with described first using the upper mold and the lower mold
The substrate of semiconductor chip and second semiconductor chip.
13. the manufacturing method of flow sensor as claimed in claim 10, it is characterised in that:
In (e2) process, the upper mold is made to be tightly attached to the framework across elastomer thin film.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2012-062577 | 2012-03-19 | ||
| JP2012062577A JP5763575B2 (en) | 2012-03-19 | 2012-03-19 | Flow sensor and manufacturing method thereof |
| CN201280065517.8A CN104024807B (en) | 2012-03-19 | 2012-12-04 | Flow transducer and manufacture method thereof |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201280065517.8A Division CN104024807B (en) | 2012-03-19 | 2012-12-04 | Flow transducer and manufacture method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106092233A CN106092233A (en) | 2016-11-09 |
| CN106092233B true CN106092233B (en) | 2019-01-22 |
Family
ID=49222161
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201610390927.XA Expired - Fee Related CN106092233B (en) | 2012-03-19 | 2012-12-04 | Flow sensor and its manufacturing method |
| CN201280065517.8A Expired - Fee Related CN104024807B (en) | 2012-03-19 | 2012-12-04 | Flow transducer and manufacture method thereof |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201280065517.8A Expired - Fee Related CN104024807B (en) | 2012-03-19 | 2012-12-04 | Flow transducer and manufacture method thereof |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5763575B2 (en) |
| CN (2) | CN106092233B (en) |
| DE (1) | DE112012006049T5 (en) |
| WO (1) | WO2013140674A1 (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6018903B2 (en) | 2012-12-17 | 2016-11-02 | 日立オートモティブシステムズ株式会社 | Physical quantity sensor |
| JP5916637B2 (en) | 2013-01-11 | 2016-05-11 | 日立オートモティブシステムズ株式会社 | Flow sensor and manufacturing method thereof |
| JP6507804B2 (en) * | 2015-04-03 | 2019-05-08 | 株式会社デンソー | Air flow measuring device |
| US10444175B2 (en) | 2015-04-03 | 2019-10-15 | Denso Corporation | Measurement device |
| JP6553587B2 (en) * | 2016-12-20 | 2019-07-31 | Ｎｉｓｓｈａ株式会社 | Gas sensor module and method of manufacturing the same |
| JP6905962B2 (en) * | 2018-07-12 | 2021-07-21 | 日立Astemo株式会社 | Flow sensor |
| JP7399348B2 (en) * | 2021-03-29 | 2023-12-15 | 日立Astemo株式会社 | flow measuring device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1058647A (en) * | 1990-08-01 | 1992-02-12 | 涂相征 | A kind of heat-flow sensor of integrated Si-membrane and manufacture method thereof |
| CN1460839A (en) * | 2002-05-10 | 2003-12-10 | 株式会社山武 | Flow sensor and its mfg. method |
| CN1752721A (en) * | 2004-09-24 | 2006-03-29 | 株式会社电装 | Thermal-type flow rate sensor and manufacturing method thereof |
| CN1928508A (en) * | 2005-09-07 | 2007-03-14 | 株式会社日立制作所 | Flow sensor |
| JP2012032247A (en) * | 2010-07-30 | 2012-02-16 | Hitachi Automotive Systems Ltd | Thermal type flowmeter |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0469958A (en) * | 1990-07-10 | 1992-03-05 | Mitsubishi Electric Corp | Semiconductor device |
| JP3882592B2 (en) * | 2001-11-26 | 2007-02-21 | 松下電工株式会社 | Semiconductor ion sensor and manufacturing method thereof |
| JP5012330B2 (en) * | 2007-08-29 | 2012-08-29 | 株式会社デンソー | Manufacturing method of sensor device and sensor device |
| JP5168184B2 (en) * | 2009-02-23 | 2013-03-21 | 株式会社デンソー | Sensor device and manufacturing method thereof |
| JP5208099B2 (en) * | 2009-12-11 | 2013-06-12 | 日立オートモティブシステムズ株式会社 | Flow sensor, method for manufacturing the same, and flow sensor module |
-
2012
- 2012-03-19 JP JP2012062577A patent/JP5763575B2/en not_active Expired - Fee Related
- 2012-12-04 CN CN201610390927.XA patent/CN106092233B/en not_active Expired - Fee Related
- 2012-12-04 WO PCT/JP2012/081340 patent/WO2013140674A1/en active Application Filing
- 2012-12-04 DE DE112012006049.0T patent/DE112012006049T5/en not_active Withdrawn
- 2012-12-04 CN CN201280065517.8A patent/CN104024807B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1058647A (en) * | 1990-08-01 | 1992-02-12 | 涂相征 | A kind of heat-flow sensor of integrated Si-membrane and manufacture method thereof |
| CN1460839A (en) * | 2002-05-10 | 2003-12-10 | 株式会社山武 | Flow sensor and its mfg. method |
| CN1752721A (en) * | 2004-09-24 | 2006-03-29 | 株式会社电装 | Thermal-type flow rate sensor and manufacturing method thereof |
| CN1928508A (en) * | 2005-09-07 | 2007-03-14 | 株式会社日立制作所 | Flow sensor |
| JP2012032247A (en) * | 2010-07-30 | 2012-02-16 | Hitachi Automotive Systems Ltd | Thermal type flowmeter |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104024807A (en) | 2014-09-03 |
| JP2013195231A (en) | 2013-09-30 |
| WO2013140674A1 (en) | 2013-09-26 |
| DE112012006049T5 (en) | 2014-12-18 |
| CN104024807B (en) | 2016-07-06 |
| CN106092233A (en) | 2016-11-09 |
| JP5763575B2 (en) | 2015-08-12 |
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