JPH04313036A - Hollow-type resin sealed semiconductor pressure sensor - Google Patents
Hollow-type resin sealed semiconductor pressure sensorInfo
- Publication number
- JPH04313036A JPH04313036A JP6018091A JP6018091A JPH04313036A JP H04313036 A JPH04313036 A JP H04313036A JP 6018091 A JP6018091 A JP 6018091A JP 6018091 A JP6018091 A JP 6018091A JP H04313036 A JPH04313036 A JP H04313036A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- die pad
- semiconductor element
- pressure
- hollow
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 53
- 239000011347 resin Substances 0.000 title claims abstract description 35
- 229920005989 resin Polymers 0.000 title claims abstract description 35
- 238000007789 sealing Methods 0.000 claims abstract description 18
- 239000000945 filler Substances 0.000 claims description 13
- 238000000465 moulding Methods 0.000 abstract description 10
- 239000000463 material Substances 0.000 abstract description 8
- 230000007547 defect Effects 0.000 abstract description 3
- 230000002950 deficient Effects 0.000 abstract description 2
- 230000005489 elastic deformation Effects 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
- H01L2924/1815—Shape
Landscapes
- Measuring Fluid Pressure (AREA)
Abstract
Description
【０００１】0001
【産業上の利用分野】この発明は、半導体素子の上面圧
力感知部に中空部を形成し、樹脂で封止するようにした
中空型樹脂封止半導体圧力センサの構造に関するもので
ある。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to the structure of a hollow resin-sealed semiconductor pressure sensor in which a hollow portion is formed in the upper surface pressure sensing portion of a semiconductor element and sealed with resin.
【０００２】0002
【従来の技術】図３はこの種従来の中空型樹脂封止半導
体圧力センサの構造を示す断面図である。図において、
１はダイパッド、２はこのダイパッド１上に接合された
半導体素子で、上面に圧力感知部２ａが形成されている
。
３はワイヤ４を介して外部装置（図示せず）との接続を
とるためのリード、５は半導体素子２の圧力感知部２ａ
と対応する部分に中空部５ａを形成し、ダイパッド１、
半導体素子２、リード３の一部およびワイヤ４を覆って
封止する樹脂である。2. Description of the Related Art FIG. 3 is a sectional view showing the structure of a conventional hollow resin-sealed semiconductor pressure sensor of this kind. In the figure,
1 is a die pad, 2 is a semiconductor element bonded on the die pad 1, and a pressure sensing portion 2a is formed on the upper surface. 3 is a lead for connecting to an external device (not shown) via a wire 4; 5 is a pressure sensing portion 2a of the semiconductor element 2;
A hollow portion 5a is formed in a portion corresponding to the die pad 1,
This is a resin that covers and seals the semiconductor element 2, a portion of the leads 3, and the wires 4.
【０００３】次に、上記のように構成された従来の中空
型樹脂封止半導体圧力センサの動作について説明する。
まず、半導体素子２の圧力感知部２ａにおいて感知され
た圧力変動は、半導体素子２内で電気信号に変換され、
ワイヤ４、リード３を通じて外部装置に取り出され処理
される。Next, the operation of the conventional hollow resin-sealed semiconductor pressure sensor constructed as described above will be explained. First, pressure fluctuations sensed by the pressure sensing section 2a of the semiconductor element 2 are converted into electrical signals within the semiconductor element 2, and
It is taken out to an external device through the wire 4 and lead 3 and processed.
【０００４】又、樹脂５の成形時には、図４に示すよう
に、予めダイパッド１上に載置された半導体素子２にワ
イヤ４を介して接続されたリード３を金型６、７で挟持
し、それぞれ金型６、７のほぼ中央部に形成された突起
部６ａおよび７ａで、半導体素子２の上面およびダイパ
ッド１の下面をそれぞれ保持し、この状態で両金型６、
７間に形成される空間８に封止樹脂を流し込み、図３に
おける樹脂５が成形される。この際、金型６の突起６ａ
によって半導体素子２の圧力感知部２ａに対応する部分
には中空部５ａが形成される。Furthermore, when molding the resin 5, as shown in FIG. 4, the leads 3, which are connected via wires 4 to the semiconductor element 2 placed on the die pad 1 in advance, are held between the molds 6 and 7. , the upper surface of the semiconductor element 2 and the lower surface of the die pad 1 are held by protrusions 6a and 7a formed approximately at the center of the molds 6 and 7, respectively, and in this state, both molds 6,
A sealing resin is poured into the space 8 formed between the holes 7 and 7, and the resin 5 shown in FIG. 3 is molded. At this time, the protrusion 6a of the mold 6
Accordingly, a hollow portion 5a is formed in a portion of the semiconductor element 2 corresponding to the pressure sensing portion 2a.
【０００５】[0005]
【発明が解決しようとする課題】従来の中空型樹脂封止
半導体圧力センサは以上のように構成されているので、
両金型６、７内にダイパッド１および半導体素子２をセ
ットし型締めをする際に、両金型６、７の両突起６ａ、
７ａ間の間隔が一定であるため、ダイパッド１および半
導体素子２の高さ方向のトータル寸法にバラツキがある
と、半導体素子２を破壊したり、封止樹脂が両金型６、
７間から漏れて、不良品が発生して製品の歩留りが悪い
という問題点があった。[Problems to be Solved by the Invention] Since the conventional hollow resin-sealed semiconductor pressure sensor is constructed as described above,
When setting the die pad 1 and the semiconductor element 2 in the molds 6 and 7 and clamping the molds, both protrusions 6a of the molds 6 and 7,
Since the spacing between the molds 7a is constant, if there are variations in the total dimensions of the die pad 1 and the semiconductor element 2 in the height direction, the semiconductor element 2 may be destroyed, or the sealing resin may be damaged by the molds 6, 7a.
There was a problem that leakage occurred between 7 and 7, resulting in defective products and poor product yield.
【０００６】この発明は上記のような問題点を解消する
ためになされたもので、樹脂の成形時に不良が発生する
ことなく、歩留りの高い中空型樹脂封止半導体圧力セン
サを提供することを目的とするものである。The present invention was made to solve the above-mentioned problems, and its purpose is to provide a hollow resin-sealed semiconductor pressure sensor that does not cause defects during resin molding and has a high yield. That is.
【０００７】[0007]
【課題を解決するための手段】この発明に係る中空型樹
脂封止半導体圧力センサは、半導体素子とダイパッドと
の間に、半導体素子をダイパッド上に載置して型締めす
る際の締付圧力よりも低く且つ樹脂を封止する際の樹脂
封入圧力よりも高い硬度を有する充填材を充填するよう
にしたものである。[Means for Solving the Problems] A hollow resin-sealed semiconductor pressure sensor according to the present invention is provided with a clamping pressure applied between a semiconductor element and a die pad when the semiconductor element is placed on the die pad and the mold is clamped. The resin is filled with a filler having a hardness lower than the hardness and higher than the resin sealing pressure when sealing the resin.
【０００８】[0008]
【作用】この発明における中空型樹脂封止半導体圧力セ
ンサの充填材は、半導体素子とダイパッドとの間で、型
締めの際に変形することにより、半導体素子およびダイ
パッドの高さ方向のトータル寸法のバラツキを吸収する
。[Function] The filling material of the hollow resin-sealed semiconductor pressure sensor according to the present invention deforms between the semiconductor element and the die pad during mold clamping, thereby increasing the total dimension in the height direction of the semiconductor element and the die pad. Absorb variation.
【０００９】[0009]
【実施例】以下、この発明の一実施例を図について説明
する。図１はこの発明の一実施例における中空型樹脂封
止半導体圧力センサの構成を示す断面図である。図にお
いて、半導体素子２、圧力感知部２ａ、リード３、ワイ
ヤ４、樹脂５および中空部５ａは、図３に示す従来の圧
力センサのものと同様である。９は上面に半導体素子２
が上面を占有する面積より若干大きな面積に形成された
凹部９ａを有するダイパッド、１０はこのダイパッド９
の凹部に充填され、ダイパッド９と半導体素子２との間
に介装される充填材であり、後述する、樹脂５を成形す
る際の型締めの締付圧力よりも低く、封入樹脂を封止す
る際の樹脂封入圧力よりも高い硬度を有している。DESCRIPTION OF THE PREFERRED EMBODIMENTS An embodiment of the present invention will be described below with reference to the drawings. FIG. 1 is a sectional view showing the structure of a hollow resin-sealed semiconductor pressure sensor according to an embodiment of the present invention. In the figure, a semiconductor element 2, a pressure sensing part 2a, a lead 3, a wire 4, a resin 5, and a hollow part 5a are the same as those of the conventional pressure sensor shown in FIG. 9 is a semiconductor element 2 on the top surface.
A die pad 9 has a concave portion 9a formed in an area slightly larger than the area occupied by the upper surface of the die pad 9.
It is a filler that is filled in the recessed part of and interposed between the die pad 9 and the semiconductor element 2, and seals the encapsulated resin at a pressure lower than the clamping pressure of mold clamping when molding the resin 5, which will be described later. It has a higher hardness than the resin sealing pressure when it is used.
【００１０】上記のように構成されたこの発明の一実施
例における中空型樹脂封止半導体圧力センサにおいては
、従来の圧力センサと同様に、まず、半導体素子２の圧
力感知部２ａにおいて感知された圧力変動は、半導体素
子２内で電気信号に変換され、ワイヤ４およびリード３
を通じて外部装置に取り出され処理される。In the hollow resin-sealed semiconductor pressure sensor according to an embodiment of the present invention configured as described above, first, as in the conventional pressure sensor, the pressure sensed by the pressure sensing portion 2a of the semiconductor element 2 is The pressure fluctuation is converted into an electrical signal within the semiconductor element 2, and the wire 4 and lead 3
is extracted to an external device for processing.
【００１１】又、樹脂５の成形時には、図２に示すよう
に、ダイパッド９の凹部９ａに充填材１０を充填する。
そして、予めワイヤ４を介してリード３が接続された半
導体素子２をこの充填材１０の上に載置し、両金型６、
７でリード３を挟持するとともに、両金型６、７のほぼ
中央に形成された突起部６ａ、７ａで、それぞれ半導体
素子２の上面およびダイパッド１の下面を保持する。こ
の状態で両金型６、７間に形成される空間８に封止樹脂
を流し込み、図２における樹脂５が成形される。この際
、金型６の突起６ａによって半導体素子２の圧力感知部
２ａに対応する部分には中空部５ａが形成される。Furthermore, when molding the resin 5, the recess 9a of the die pad 9 is filled with a filler 10, as shown in FIG. Then, the semiconductor element 2 to which the leads 3 are connected in advance via the wires 4 is placed on the filler 10, and both molds 6,
7 sandwich the lead 3, and protrusions 6a and 7a formed approximately at the center of both molds 6 and 7 hold the upper surface of the semiconductor element 2 and the lower surface of the die pad 1, respectively. In this state, a sealing resin is poured into the space 8 formed between the two molds 6 and 7, and the resin 5 shown in FIG. 2 is molded. At this time, a hollow portion 5a is formed by the protrusion 6a of the mold 6 in a portion corresponding to the pressure sensing portion 2a of the semiconductor element 2.
【００１２】上記のように構成されたこの発明の一実施
例における中空型樹脂封止半導体圧力センサは、半導体
素子２とダイパッド９との間に充填材１０が充填されて
いるので、もし、半導体素子２およびダイパッド９の高
さ方向のトータル寸法が標準高さより高い場合には、型
締めの際に、充填材１０はその硬度が型締めの締付圧力
より低いため弾性変形して、半導体素子２が、充填材１
０中に埋没するような恰好になって標準高さに修正され
る。
又、充填材１０の硬度は樹脂封止時の樹脂封入圧力より
高いため、図２に示す状態で樹脂を封入した場合にも、
充填材１０は変形することなく修正された標準高さの状
態を維持するので何ら支障はない。In the hollow resin-sealed semiconductor pressure sensor according to one embodiment of the present invention constructed as described above, since the filler 10 is filled between the semiconductor element 2 and the die pad 9, if the semiconductor If the total dimension in the height direction of the element 2 and the die pad 9 is higher than the standard height, the filler 10 is elastically deformed during mold clamping because its hardness is lower than the clamping pressure of the mold clamp, and the semiconductor element 2 is filler 1
The height is adjusted to the standard height so that it looks as if it is buried in 0. Furthermore, since the hardness of the filler 10 is higher than the resin sealing pressure during resin sealing, even when the resin is sealed in the state shown in FIG.
Since the filling material 10 maintains the corrected standard height without being deformed, there is no problem.
【００１３】尚、上記一実施例における充填材１０は、
ダイパッド９上に形成された凹部９ａに充填されている
が、充填材１０の充填量を適当にすることにより凹部９
ａが無くても充分にこの発明の目的は達せられる。又、
充填材としてはシリコンゴム等が使用され、型締めの際
の締付圧力およじ樹脂封止の際の樹脂封入圧力に応じて
硬度は適宣選定される。[0013] The filler 10 in the above embodiment is as follows:
Although the recess 9a formed on the die pad 9 is filled, the recess 9 can be filled by filling an appropriate amount of the filler 10.
The purpose of this invention can be fully achieved even without a. or,
Silicone rubber or the like is used as the filler, and its hardness is appropriately selected depending on the clamping pressure during mold clamping and the resin sealing pressure during resin sealing.
【００１４】[0014]
【発明の効果】以上のように、この発明によれば半導体
素子とダイパッドとの間に、半導体素子をダイパッド上
に載置して型締めする際の締付圧力よりも低く、且つ樹
脂を封止する際の樹脂封入圧力よりも高い硬度を有する
充填材を充填するようにしたので、樹脂の成形時に不良
が発生することもなくなり、歩留りの高い中空型樹脂封
止半導体圧力センサを提供することができる。As described above, according to the present invention, a resin is sealed between the semiconductor element and the die pad, and the clamping pressure is lower than the clamping pressure when the semiconductor element is placed on the die pad and the mold is clamped. To provide a hollow-type resin-sealed semiconductor pressure sensor which is filled with a filler having a hardness higher than the resin-sealing pressure when sealing, so that defects do not occur during molding of the resin and the yield is high. Can be done.
【図１】この発明の一実施例における中空型樹脂封止半
導体圧力センサの構成を示す断面図である。FIG. 1 is a cross-sectional view showing the configuration of a hollow resin-sealed semiconductor pressure sensor according to an embodiment of the present invention.
【図２】図１における中空型樹脂封止半導体圧力センサ
を樹脂封止する場合の金型で型締めされた状態を示す断
面図である。FIG. 2 is a sectional view showing a state in which the hollow resin-sealed semiconductor pressure sensor in FIG. 1 is clamped with a mold when resin-sealed.
【図３】従来の中空型樹脂封止半導体圧力センサの構成
を示す断面図である。FIG. 3 is a sectional view showing the configuration of a conventional hollow resin-sealed semiconductor pressure sensor.
【図４】図３における中空型樹脂封止半導体圧力センサ
を樹脂封止する場合の金型で型締めされた状態を示す断
面図である。FIG. 4 is a sectional view showing a state in which the hollow resin-sealed semiconductor pressure sensor in FIG. 3 is clamped with a mold when resin-sealed.
２ 半導体素子 ２ａ 圧力感知部 ５ 樹脂 ５ａ 中空部 ９ ダイパッド １０ 充填材 2 Semiconductor element 2a Pressure sensing part 5 Resin 5a Hollow part 9 Die pad 10 Filling material
Claims (1)
の上面圧力感知部に中空部を形成して樹脂で封止するよ
うにした中空型樹脂封止半導体圧力センサにおいて、上
記半導体素子と上記ダイパッドとの間に上記半導体素子
を上記ダイパッド上に載置して型締めする際の締付圧力
よりも低く且つ樹脂を封止する際の樹脂封入圧力よりも
高い硬度を有する充填材を充填したことを特徴とする中
空型樹脂封止半導体圧力センサ。1. A hollow resin-sealed semiconductor pressure sensor in which a hollow part is formed in the upper surface pressure sensing part of a semiconductor element placed on a die pad and sealed with resin, wherein the semiconductor element and the die pad are sealed together. and a filler having a hardness lower than the clamping pressure when placing the semiconductor element on the die pad and clamping the mold and higher than the resin sealing pressure when sealing the resin. A hollow resin-sealed semiconductor pressure sensor featuring:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6018091A JP2639232B2 (en) | 1991-03-25 | 1991-03-25 | Hollow resin-sealed semiconductor pressure sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6018091A JP2639232B2 (en) | 1991-03-25 | 1991-03-25 | Hollow resin-sealed semiconductor pressure sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH04313036A true JPH04313036A (en) | 1992-11-05 |
| JP2639232B2 JP2639232B2 (en) | 1997-08-06 |
Family
ID=13134704
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6018091A Expired - Lifetime JP2639232B2 (en) | 1991-03-25 | 1991-03-25 | Hollow resin-sealed semiconductor pressure sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2639232B2 (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001050838A (en) * | 1999-06-25 | 2001-02-23 | Robert Bosch Gmbh | Manufacture of pressure sensor |
| US8193024B2 (en) | 2008-12-26 | 2012-06-05 | Renesas Electronics Corporation | Manufacturing method for semiconductor devices and semiconductor device |
| JP2013534320A (en) * | 2010-08-20 | 2013-09-02 | ローベルト ボッシュ ゲゼルシャフト ミット ベシュレンクテル ハフツング | Sensor module for housing pressure sensor chip and assembling to sensor housing |
-
1991
- 1991-03-25 JP JP6018091A patent/JP2639232B2/en not_active Expired - Lifetime
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001050838A (en) * | 1999-06-25 | 2001-02-23 | Robert Bosch Gmbh | Manufacture of pressure sensor |
| JP4653285B2 (en) * | 1999-06-25 | 2011-03-16 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | Method for manufacturing a pressure sensor |
| US8193024B2 (en) | 2008-12-26 | 2012-06-05 | Renesas Electronics Corporation | Manufacturing method for semiconductor devices and semiconductor device |
| JP2013534320A (en) * | 2010-08-20 | 2013-09-02 | ローベルト ボッシュ ゲゼルシャフト ミット ベシュレンクテル ハフツング | Sensor module for housing pressure sensor chip and assembling to sensor housing |
| US9006847B2 (en) | 2010-08-20 | 2015-04-14 | Robert Bosch Gmbh | Sensor module for accommodating a pressure sensor chip and for installation into a sensor housing |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2639232B2 (en) | 1997-08-06 |
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