JP3833832B2 - Manufacturing method of resin-encapsulated semiconductor device - Google Patents

Manufacturing method of resin-encapsulated semiconductor device Download PDF

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JP3833832B2
JP3833832B2 JP26913898A JP26913898A JP3833832B2 JP 3833832 B2 JP3833832 B2 JP 3833832B2 JP 26913898 A JP26913898 A JP 26913898A JP 26913898 A JP26913898 A JP 26913898A JP 3833832 B2 JP3833832 B2 JP 3833832B2
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resin
mold
semiconductor device
inner lead
lead
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JP2000100844A (en
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友春 堀尾
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Rohm Co Ltd
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Rohm Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item

Description

【０００１】
【発明の属する技術分野】
本願発明は、封止樹脂の表面にインナーリードの表面が露出する構造の半導体装置を製造する樹脂封止型半導体装置の製造方法に関する。
【０００２】
【従来の技術】
封止樹脂の表面にインナーリードの表面が露出する構造の半導体装置を製造するに際しては、従来、図７に示すように、半導体素子５１が搭載されたリードフレーム５２と、上金型５３と、下金型５４とを用いて、図８に示すように、上金型５３と下金型５４との間にリードフレーム５２を挟み込んで型締めし、上金型５３と下金型５４とによって形成される閉空間５５に樹脂を充填することにより、半導体素子５１を樹脂封止していた。なお、半導体素子５１は、リードフレーム５２のダイパッド部５６にダイボンディングにより固定されており、半導体素子５１のパッドとリードフレーム５２のインナーリード部５７とは、ワイヤボンディングにより金線５８を介して接続されている。また、上金型５３には、リードフレーム５２のインナーリード部５７を下金型５４に向けて押圧することにより閉空間５５からの樹脂の漏洩を防止するためのリード押え部５９が突設されている。
【０００３】
【発明が解決しようとする課題】
しかし、上記従来の方法では、上金型５３と下金型５４とを型締めしたときに、上金型５３に突設されたリード押え部５９によってリードフレーム５２のインナーリード部５７が強固に押圧されるので、インナーリード部５７の自由端側すなわち閉空間５５の内部に位置する端部が図８のように浮き上がって、下金型５４との間に隙間６０を生じ、この隙間６０に樹脂が浸透する。この結果、封止樹脂の表面に露出するインナーリード部５７の表面に薄い樹脂製のバリが付着した樹脂封止型半導体装置が得られることになり、通常のバリ取り処理ではインナーリード部５７に付着したバリを完全に除去することが困難であることから、バリに起因する各種の不都合が発生してしまう。この不都合とは、たとえば、製品完成後の特性測定に際して、樹脂封止型半導体装置を測定装置のソケットに装着したときに、バリにより導通不良が生じることが挙げられる。さらには、インナーリード部５７に付着したバリが測定装置のソケットの端子上に落下して、以後の測定結果が全て誤りとなってしまうことも考えられる。
【０００４】
本願発明は、上記した事情のもとで考え出されたものであって、インナーリード部の露出表面に封止樹脂によるバリが付着するのを良好に抑制できる樹脂封止型半導体装置の製造方法を提供することをその課題とする。
【０００５】
【発明の開示】
上記課題を解決するため、本願発明では、次の技術的手段を講じている。
【０００６】
本願発明の第１の側面によれば、半導体素子が搭載されたリードフレームを１対の金型の間に挟み込んで型締めし、１対の金型のうちの一方の金型に突設されたリード押え部によってリードフレームのインナーリード部を押圧した状態で、１対の金型によって形成される閉空間に樹脂を注入することにより、封止樹脂の表面にインナーリード部の表面が露出する構造の半導体装置を製造する樹脂封止型半導体装置の製造方法であって、リードフレームを１対の金型の間に挟み込むよりも前に、インナーリード部を、その自由端が半導体素子の搭載位置から遠ざかる方向に変位するように、所定の箇所で屈曲させることを特徴とする、樹脂封止型半導体装置の製造方法が提供される。
【０００７】
このようにすれば、リードフレームを１対の金型の間に挟み込んだときに、インナーリード部の屈曲部分が弾性変形することにより直線状の姿勢になる。すなわち、インナーリード部の自由端側が他方の金型を弾性力により押圧した状態でリードフレームが１対の金型の間に挟み込まれる。そして、型締めしたときに一方の金型のリード押え部によりインナーリード部が押圧されてインナーリード部の自由端側が浮き上がろうとする力は、インナーリード部の弾性復元力と反対方向に作用するので、浮き上がろうとする力が弾性復元力により打ち消され、浮き上がりが阻止される。この結果、インナーリード部と他方の金型との間に隙間が生じることがなく、当然に樹脂の浸透もないので、封止樹脂の固化後に１対の金型から取り出した樹脂封止型半導体装置におけるインナーリード部の露出表面に樹脂製のバリが付着していることがない。したがって、バリの付着による各種の不都合を良好に回避できる。
【０００８】
本願発明の第２の側面によれば、半導体素子が搭載されたリードフレームを１対の金型の間に挟み込んで型締めし、１対の金型のうちの一方の金型に突設されたリード押え部によってリードフレームのインナーリード部を押圧した状態で、１対の金型によって形成される閉空間に樹脂を注入することにより、封止樹脂の表面にインナーリード部の表面が露出する構造の半導体装置を製造する樹脂封止型半導体装置の製造方法であって、１対の金型のうちの他方の金型として、一方の金型のリード押え部よりも閉空間から遠い位置にてインナーリード部を押圧する突出部が突設された金型を用いることを特徴とする、樹脂封止型半導体装置の製造方法が提供される。
【０００９】
このようにすれば、リードフレームを１対の金型の間に挟み込んで型締めしたときに、インナーリード部は、一方の金型に突設されたリード押え部によって他方の金型に向けて押圧され、かつ、他方の金型に突設された突出部によって一方の金型に向けて押圧される。すなわち、一方の金型のリード押え部によりインナーリード部が押圧されることによりインナーリード部の自由端側に作用する力と、他方の金型の突出部によりインナーリード部が押圧されることによりインナーリード部の自由端側に作用する力とが、互いに反対方向に作用するので、両者が打ち消され、浮き上がりが阻止される。この結果、インナーリード部と他方の金型との間に隙間が生じることがなく、当然に樹脂の浸透もないので、封止樹脂の固化後に１対の金型から取り出した樹脂封止型半導体装置におけるインナーリード部の露出表面に樹脂製のバリが付着していることがない。したがって、バリの付着による各種の不都合を良好に回避できる。
【００１０】
本願発明のその他の特徴および利点は、添付図面を参照して以下に行う詳細な説明によって、より明らかとなろう。
【００１１】
【発明の実施の形態】
以下、本願発明の好ましい実施の形態について、図面を参照して具体的に説明する。
【００１２】
図３は、本願発明にかかる樹脂封止型半導体装置の製造方法に用いるリードフレームの平面図であって、このリードフレーム１は、リードフレーム形成工程により銅や鉄などの金属板を打ち抜くなどして得られたものであり、互いに平行に延びる一対のサイドフレーム２，２を有している。これらのサイドフレーム２，２を掛け渡すようにしてクロスフレーム３が等間隔毎に形成されており、一対のサイドフレーム２，２間には、桟状のインナーリード部４と、平板状のダイパッド部５とが形成されている。ダイパッド部５は、その四隅をクロスライン部６によって支持されている。
【００１３】
図１は、金型への装着直前の状態におけるリードフレーム１の要部拡大断面図であって、リードフレーム形成工程よりも後のリードフレーム加工工程において、クロスライン部６は、ダイパッド部５が半導体素子載置面側に若干変位するように屈曲されており、インナーリード部４は、その自由端４ａがダイパッド部５から遠ざかる方向に変位するように屈曲されている。この屈曲角度は、リードフレーム１の搬送時におけるインナーリード部４の引っ掛かりを防止するために、３０度程度以下であることが好ましい。そして、ダイパッド部５の半導体素子載置面には、半導体素子１１がダイボンディングにより固定されており、半導体素子１１のパッド部とインナーリード部４とは、ワイヤボンディングされた金線１２を介して電気的に接続されている。
【００１４】
図２は、金型に装着して型締めした状態におけるリードフレーム１の要部拡大断面図であって、上金型２１には、下金型２２との対向面に、リードフレーム１のインナーリード部４を下金型２２に向けて押圧することにより樹脂の漏洩を防止するためのリード押え部２１ａが突設されている。下金型２２の上金型２１との対向面は、平面状である。リードフレーム１のダイパッド部５、半導体素子１１、あるいは金線１２などは、上金型２１と下金型２２とによって形成される閉空間２３すなわちキャビティに位置している。インナーリード部４の屈曲部４ｂは、リード押え部２１ａにより押圧される箇所の近傍に位置しているのであるが、リードフレーム１を上金型２１と下金型２２との間に挟み込んで型締めすなわちクランプした状態では、インナーリード部４は直線状に弾性変形している。
【００１５】
次に樹脂封止型半導体装置の製造方法の手順を説明する。
【００１６】
先ず、図３に示すようなリードフレーム１を製造し、上記のようにクロスライン部６およびインナーリード部４を互いに反対方向に屈曲させた後、図２に示すように、ダイパッド部５上に半導体素子１１をダイボンディングし、半導体素子１１のパッド部とインナーリード部４との間に金線１２をワイヤボンディングする。そしてこのリードフレーム１を、上金型２１と下金型２２との間に挟み込み、図２に示すように型締めする。
【００１７】
この状態では、インナーリード部４の屈曲部４ｂが弾性変形することによって、インナーリード部４は全体として直線状の姿勢になっている。すなわち、上金型２１のリード押え部２１ａによりインナーリード部４が押圧されて自由端４ａ側が浮き上がろうとする力は、インナーリード部４の屈曲部４ｂの弾性復元力と反対方向に作用するので、浮き上がろうとする力が弾性復元力により打ち消され、浮き上がりが阻止される。この結果、インナーリード部４と下金型２２との間に隙間が生じることがない。
【００１８】
次に、閉空間２３に溶融したエポキシ樹脂などの樹脂を充填し、固化させる。そして、樹脂の固化後、樹脂封止された半導体装置を上金型２１と下金型２２との間から取り出し、インナーリード部４やクロスライン部６の不要部分を切除することにより、樹脂封止型半導体装置が得られる。このとき、上記のようにインナーリード部４と下金型２２との間に隙間が生じていないので、インナーリード部４と下金型２２との間に樹脂が浸透することがない。したがって、樹脂の固化後に上金型２１と下金型２２との間から取り出した半導体装置は、インナーリード部４の露出表面に樹脂製のバリが付着していることがなく、バリの付着による各種の不都合を良好に回避できる。
【００１９】
図４は、上記のように製造された樹脂封止型半導体装置の一部切欠斜視図であって、この樹脂封止型半導体装置２４においては、半導体素子１１や金線１２などが封止樹脂２５によって覆われており、樹脂封止型半導体装置２４の下面には、インナーリード部４の表面が露出している。すなわち、樹脂封止型半導体装置２４の下面側では、封止樹脂２５の表面とインナーリード部４の表面とが面一になっている。
【００２０】
図５は、本願発明の別の実施形態における樹脂封止型半導体装置の製造方法に用いる金型の断面図であって、上記実施形態のようにインナーリード部４を予め屈曲させておく代わりに、この実施形態のように上金型２１との対向面に突出部３１ａが突設された下金型３１を用いてもよい。下金型３１の突出部３１ａは、上金型２１と下金型３１との間にリードフレーム１を挟み込んだ状態で、上金型２１のリード押え部２１ａよりも外側に位置している。すなわち、上金型２１と下金型３１とにより形成される閉空間２３を基準に考えると、突出部３１ａはリード押え部２１ａよりも閉空間２３から遠い位置に突設されている。
【００２１】
このような上金型２１と下金型３１との間にリードフレーム１を挟み込んで、図６に示すように型締めすると、インナーリード部４が、上金型２１に突設されたリード押え部２１ａによって下金型３１に向けて押圧され、かつ、下金型３１に突設された突出部３１ａによって上金型２１に向けて押圧される。すなわち、上金型２１のリード押え部２１ａによりインナーリード部４が押圧されることによりインナーリード部４の自由端４ａ側に作用する力と、下金型３１の突出部３１ａによりインナーリード部４が押圧されることによりインナーリード部４の自由端４ａ側に作用する力とが、互いに反対方向に作用するので、両者が打ち消され、インナーリード部４の浮き上がりが阻止される。この結果、インナーリード部４と下金型３１との間に隙間が生じることがない。
【００２２】
この後、閉空間２３に溶融したエポキシ樹脂などの樹脂を充填し、固化させる。そして、樹脂の固化後、樹脂封止された半導体装置を上金型２１と下金型３１との間から取り出し、インナーリード部４やクロスライン部６の不要部分を切除することにより、図４に示すような樹脂封止型半導体装置が得られる。このとき、上記のようにインナーリード部４と下金型３１との間に隙間が生じていないので、インナーリード部４と下金型３１との間に樹脂が浸透することがない。したがって、樹脂の固化後に上金型２１と下金型３１との間から取り出した半導体装置は、インナーリード部４の露出表面に樹脂製のバリが付着していることがなく、バリの付着による各種の不都合を良好に回避できる。
【図面の簡単な説明】
【図１】本願発明にかかる樹脂封止型半導体装置の製造方法に用いるリードフレームの要部拡大断面図である。
【図２】図１に示すリードフレームを金型に装着して型締めした状態の要部拡大断面図である。
【図３】図１に示すリードフレームの平面図である。
【図４】本願発明にかかる製造方法によって製造された樹脂封止型半導体装置の一部切欠斜視図である。
【図５】本願発明の別の実施形態における樹脂封止型半導体装置の製造方法に用いる金型の要部拡大断面図である。
【図６】図５に示す金型にリードフレームを装着して型締めした状態の要部拡大断面図である。
【図７】従来の樹脂封止型半導体装置の製造方法に用いるリードフレームおよび金型の要部拡大断面図である。
【図８】図７に示すリードフレームを金型に装着して型締めした状態の要部拡大断面図である。
【符号の説明】
１ リードフレーム
４ インナーリード部
４ａ 自由端
４ｂ 屈曲部
５ ダイパッド部
１１ 半導体素子
２１ 上金型
２１ａ リード押え部
２２ 下金型
２３ 閉空間
２４ 樹脂封止型半導体装置
３１ 下金型
３１ａ 突出部[0001]
BACKGROUND OF THE INVENTION
The present invention relates to a resin-encapsulated semiconductor device manufacturing method for manufacturing a semiconductor device having a structure in which the surface of an inner lead is exposed on the surface of an encapsulating resin.
[0002]
[Prior art]
When manufacturing a semiconductor device having a structure in which the surface of the inner lead is exposed on the surface of the sealing resin, conventionally, as shown in FIG. 7, a lead frame 52 on which a semiconductor element 51 is mounted, an upper mold 53, As shown in FIG. 8, the lower die 54 is used to clamp the lead frame 52 between the upper die 53 and the lower die 54, and the upper die 53 and the lower die 54. The semiconductor element 51 was sealed with resin by filling the formed closed space 55 with resin. The semiconductor element 51 is fixed to the die pad portion 56 of the lead frame 52 by die bonding, and the pad of the semiconductor element 51 and the inner lead portion 57 of the lead frame 52 are connected via a gold wire 58 by wire bonding. Has been. Further, the upper mold 53 is provided with a lead presser 59 for preventing the resin leakage from the closed space 55 by pressing the inner lead 57 of the lead frame 52 toward the lower mold 54. ing.
[0003]
[Problems to be solved by the invention]
However, in the above conventional method, when the upper mold 53 and the lower mold 54 are clamped, the inner lead portion 57 of the lead frame 52 is firmly fixed by the lead pressing portion 59 protruding from the upper mold 53. Since the pressure is pressed, the free end side of the inner lead portion 57, that is, the end located inside the closed space 55 is lifted as shown in FIG. 8, and a gap 60 is formed between the lower mold 54 and the gap 60. The resin penetrates. As a result, a resin-encapsulated semiconductor device having a thin resin burr attached to the surface of the inner lead portion 57 exposed on the surface of the sealing resin is obtained. Since it is difficult to completely remove the attached burrs, various inconveniences due to the burrs occur. This inconvenience is, for example, that when a resin-encapsulated semiconductor device is attached to a socket of a measuring device in measuring characteristics after the product is completed, a conduction failure is caused by burrs. Furthermore, it is conceivable that burrs adhering to the inner lead portion 57 fall on the socket terminal of the measuring device, and all subsequent measurement results will be erroneous.
[0004]
The invention of the present application has been conceived under the above circumstances, and a method for manufacturing a resin-encapsulated semiconductor device that can satisfactorily suppress burrs due to an encapsulating resin from adhering to the exposed surface of the inner lead portion. The issue is to provide
[0005]
DISCLOSURE OF THE INVENTION
In order to solve the above problems, the present invention takes the following technical means.
[0006]
According to the first aspect of the present invention, a lead frame on which a semiconductor element is mounted is sandwiched between a pair of molds and clamped to protrude from one mold of the pair of molds. The surface of the inner lead portion is exposed to the surface of the sealing resin by injecting resin into the closed space formed by the pair of molds while the inner lead portion of the lead frame is pressed by the lead holding portion. A method of manufacturing a resin-encapsulated semiconductor device for manufacturing a semiconductor device having a structure, wherein an inner lead portion is mounted before a lead frame is sandwiched between a pair of dies, and a semiconductor element is mounted on a free end thereof. A method for manufacturing a resin-encapsulated semiconductor device is provided, wherein the resin-encapsulated semiconductor device is bent at a predetermined location so as to be displaced in a direction away from the position.
[0007]
In this way, when the lead frame is sandwiched between a pair of molds, the bent portion of the inner lead portion is elastically deformed, resulting in a linear posture. That is, the lead frame is sandwiched between a pair of molds in a state where the free end side of the inner lead portion presses the other mold with elastic force. Then, when the mold is clamped, the inner lead part is pressed by the lead holding part of one mold and the free end side of the inner lead part tries to lift up in the opposite direction to the elastic restoring force of the inner lead part. Therefore, the force to lift is canceled out by the elastic restoring force, and the lifting is prevented. As a result, there is no gap between the inner lead portion and the other mold, and naturally no resin permeates. Therefore, the resin-encapsulated semiconductor taken out from the pair of molds after the sealing resin is solidified The resin burrs are not attached to the exposed surface of the inner lead portion in the apparatus. Therefore, various inconveniences due to the adhesion of burrs can be favorably avoided.
[0008]
According to the second aspect of the present invention, a lead frame on which a semiconductor element is mounted is sandwiched between a pair of molds and clamped to protrude from one mold of the pair of molds. The surface of the inner lead portion is exposed to the surface of the sealing resin by injecting resin into the closed space formed by the pair of molds while the inner lead portion of the lead frame is pressed by the lead holding portion. A method for manufacturing a resin-encapsulated semiconductor device for manufacturing a semiconductor device having a structure, wherein the other mold of a pair of molds is located farther from a closed space than a lead press portion of one mold. A method for manufacturing a resin-encapsulated semiconductor device is provided, wherein a mold having a protruding portion that presses the inner lead portion is used.
[0009]
In this way, when the lead frame is sandwiched between a pair of molds and clamped, the inner lead part is directed toward the other mold by the lead presser part protruding from the one mold. It is pressed and pressed toward one mold by the projecting portion protruding from the other mold. That is, when the inner lead portion is pressed by the lead pressing portion of one mold, the force acting on the free end side of the inner lead portion and the inner lead portion is pressed by the protruding portion of the other mold. Since the forces acting on the free end side of the inner lead portion act in opposite directions to each other, they are canceled out and the lifting is prevented. As a result, there is no gap between the inner lead portion and the other mold, and naturally no resin permeates. Therefore, the resin-encapsulated semiconductor taken out from the pair of molds after the sealing resin is solidified The resin burrs are not attached to the exposed surface of the inner lead portion in the apparatus. Therefore, various inconveniences due to the adhesion of burrs can be favorably avoided.
[0010]
Other features and advantages of the present invention will become more apparent from the detailed description given below with reference to the accompanying drawings.
[0011]
DETAILED DESCRIPTION OF THE INVENTION
Hereinafter, preferred embodiments of the present invention will be specifically described with reference to the drawings.
[0012]
FIG. 3 is a plan view of a lead frame used in the method for manufacturing a resin-encapsulated semiconductor device according to the present invention. The lead frame 1 is formed by punching a metal plate such as copper or iron in a lead frame forming process. It has a pair of side frames 2 and 2 that extend in parallel to each other. Cross frames 3 are formed at equal intervals so as to span these side frames 2, 2, and between the pair of side frames 2, 2, a cross-shaped inner lead portion 4 and a flat die pad Part 5 is formed. The die pad part 5 is supported by the cross line part 6 at the four corners.
[0013]
FIG. 1 is an enlarged cross-sectional view of the main part of the lead frame 1 in a state immediately before mounting on the mold. In the lead frame processing step after the lead frame forming step, the cross line portion 6 is formed by the die pad portion 5. The inner lead portion 4 is bent so as to be slightly displaced toward the semiconductor element placement surface side, and the free end 4 a is bent so as to be displaced away from the die pad portion 5. The bending angle is preferably about 30 degrees or less in order to prevent the inner lead portion 4 from being caught when the lead frame 1 is conveyed. And the semiconductor element 11 is being fixed to the semiconductor element mounting surface of the die pad part 5 by die bonding, and the pad part of the semiconductor element 11 and the inner lead part 4 are connected via the wire 12 by which wire bonding was carried out. Electrically connected.
[0014]
FIG. 2 is an enlarged cross-sectional view of the main part of the lead frame 1 in a state where the lead frame 1 is mounted and clamped. The upper mold 21 has an inner surface of the lead frame 1 on the surface facing the lower mold 22. By pressing the lead part 4 toward the lower mold 22, a lead holding part 21 a for preventing leakage of the resin is projected. The surface facing the upper mold 21 of the lower mold 22 is planar. The die pad portion 5, the semiconductor element 11, or the gold wire 12 of the lead frame 1 is located in a closed space 23, that is, a cavity formed by the upper die 21 and the lower die 22. The bent portion 4b of the inner lead portion 4 is located in the vicinity of the portion pressed by the lead holding portion 21a. However, the lead frame 1 is sandwiched between the upper die 21 and the lower die 22 and the die is pressed. In the tightened or clamped state, the inner lead portion 4 is elastically deformed linearly.
[0015]
Next, the procedure of the method for manufacturing the resin-encapsulated semiconductor device will be described.
[0016]
First, the lead frame 1 as shown in FIG. 3 is manufactured, and the cross line portion 6 and the inner lead portion 4 are bent in opposite directions as described above, and then, as shown in FIG. The semiconductor element 11 is die-bonded, and a gold wire 12 is wire-bonded between the pad portion of the semiconductor element 11 and the inner lead portion 4. Then, the lead frame 1 is sandwiched between the upper mold 21 and the lower mold 22 and is clamped as shown in FIG.
[0017]
In this state, the bent portion 4b of the inner lead portion 4 is elastically deformed, so that the inner lead portion 4 is in a linear posture as a whole. That is, the force that the inner lead portion 4 is pressed by the lead pressing portion 21a of the upper die 21 and the free end 4a side is lifted acts in the opposite direction to the elastic restoring force of the bent portion 4b of the inner lead portion 4. Therefore, the force to lift is canceled out by the elastic restoring force, and the lift is prevented. As a result, there is no gap between the inner lead portion 4 and the lower mold 22.
[0018]
Next, the closed space 23 is filled with a molten resin such as an epoxy resin and solidified. Then, after the resin is solidified, the resin-sealed semiconductor device is taken out from between the upper mold 21 and the lower mold 22, and unnecessary portions of the inner lead part 4 and the cross line part 6 are cut off, thereby sealing the resin. A stationary semiconductor device is obtained. At this time, since no gap is formed between the inner lead portion 4 and the lower mold 22 as described above, the resin does not penetrate between the inner lead portion 4 and the lower mold 22. Therefore, in the semiconductor device taken out between the upper mold 21 and the lower mold 22 after the resin is solidified, the resin burrs are not attached to the exposed surface of the inner lead portion 4, and the burrs are attached. Various inconveniences can be avoided satisfactorily.
[0019]
FIG. 4 is a partially cutaway perspective view of the resin-encapsulated semiconductor device manufactured as described above. In this resin-encapsulated semiconductor device 24, the semiconductor element 11, the gold wire 12 and the like are encapsulated resin. The surface of the inner lead portion 4 is exposed on the lower surface of the resin-encapsulated semiconductor device 24. That is, on the lower surface side of the resin-encapsulated semiconductor device 24, the surface of the encapsulating resin 25 and the surface of the inner lead portion 4 are flush with each other.
[0020]
FIG. 5 is a cross-sectional view of a mold used in a method for manufacturing a resin-encapsulated semiconductor device according to another embodiment of the present invention, and instead of bending the inner lead portion 4 in advance as in the above embodiment. As in this embodiment, the lower mold 31 in which the projecting portion 31a is provided on the surface facing the upper mold 21 may be used. The protruding portion 31 a of the lower mold 31 is located outside the lead pressing portion 21 a of the upper mold 21 in a state where the lead frame 1 is sandwiched between the upper mold 21 and the lower mold 31. That is, when the closed space 23 formed by the upper mold 21 and the lower mold 31 is considered as a reference, the protruding portion 31a protrudes at a position farther from the closed space 23 than the lead pressing portion 21a.
[0021]
When the lead frame 1 is sandwiched between the upper mold 21 and the lower mold 31 and the mold is clamped as shown in FIG. 6, the inner lead portion 4 is a lead presser projecting from the upper mold 21. It is pressed toward the lower mold 31 by the portion 21 a and is pressed toward the upper mold 21 by the protruding portion 31 a protruding from the lower mold 31. That is, the inner lead portion 4 is pressed by the lead holding portion 21 a of the upper die 21 and the inner lead portion 4 is pressed by the force acting on the free end 4 a side of the inner lead portion 4 and the protruding portion 31 a of the lower die 31. Since the force acting on the free end 4a side of the inner lead portion 4 acts in the opposite direction to each other by being pressed, both are canceled out and the floating of the inner lead portion 4 is prevented. As a result, there is no gap between the inner lead part 4 and the lower mold 31.
[0022]
Thereafter, the closed space 23 is filled with a molten resin such as an epoxy resin and solidified. Then, after the resin is solidified, the resin-encapsulated semiconductor device is taken out between the upper mold 21 and the lower mold 31 and unnecessary portions of the inner lead portion 4 and the cross line portion 6 are cut away, thereby removing the semiconductor device shown in FIG. A resin-encapsulated semiconductor device as shown in FIG. At this time, since no gap is formed between the inner lead portion 4 and the lower mold 31 as described above, the resin does not penetrate between the inner lead portion 4 and the lower mold 31. Therefore, in the semiconductor device taken out between the upper mold 21 and the lower mold 31 after the resin is solidified, the resin burrs are not attached to the exposed surface of the inner lead portion 4, and the burrs are attached. Various inconveniences can be avoided satisfactorily.
[Brief description of the drawings]
FIG. 1 is an enlarged cross-sectional view of a main part of a lead frame used in a method for manufacturing a resin-encapsulated semiconductor device according to the present invention.
2 is an enlarged cross-sectional view of a main part in a state where the lead frame shown in FIG. 1 is mounted on a mold and clamped. FIG.
3 is a plan view of the lead frame shown in FIG. 1. FIG.
FIG. 4 is a partially cutaway perspective view of a resin-encapsulated semiconductor device manufactured by the manufacturing method according to the present invention.
FIG. 5 is an enlarged cross-sectional view of a main part of a mold used in a method for manufacturing a resin-encapsulated semiconductor device according to another embodiment of the present invention.
6 is an enlarged cross-sectional view of a main part in a state where a lead frame is attached to the mold shown in FIG. 5 and the mold is clamped. FIG.
FIG. 7 is an enlarged cross-sectional view of a main part of a lead frame and a mold used in a conventional method for manufacturing a resin-encapsulated semiconductor device.
8 is an enlarged cross-sectional view of a main part in a state where the lead frame shown in FIG. 7 is mounted on a mold and clamped. FIG.
[Explanation of symbols]
DESCRIPTION OF SYMBOLS 1 Lead frame 4 Inner lead part 4a Free end 4b Bending part 5 Die pad part 11 Semiconductor element 21 Upper metal mold 21a Lead holding part 22 Lower metal mold 23 Closed space 24 Resin sealing type semiconductor device 31 Lower metal mold 31a

Claims (2)

半導体素子が搭載されたリードフレームを１対の金型の間に挟み込んで型締めし、前記１対の金型のうちの一方の金型に突設されたリード押え部によって前記リードフレームのインナーリード部を押圧した状態で、前記１対の金型によって形成される閉空間に樹脂を注入することにより、封止樹脂の表面に前記インナーリード部の表面が露出する構造の半導体装置を製造する樹脂封止型半導体装置の製造方法であって、
前記リードフレームを前記１対の金型の間に挟み込むよりも前に、前記インナーリード部を、その自由端が前記半導体素子の搭載位置から遠ざかる方向に変位するように、所定の箇所で屈曲させることを特徴とする、樹脂封止型半導体装置の製造方法。A lead frame on which a semiconductor element is mounted is sandwiched between a pair of molds and clamped, and an inner portion of the lead frame is formed by a lead pressing portion projecting from one of the pair of molds. A semiconductor device having a structure in which the surface of the inner lead portion is exposed to the surface of the sealing resin by injecting resin into a closed space formed by the pair of molds while the lead portion is pressed. A method for manufacturing a resin-encapsulated semiconductor device,
Before the lead frame is sandwiched between the pair of molds, the inner lead portion is bent at a predetermined position so that the free end is displaced in a direction away from the mounting position of the semiconductor element. A method for manufacturing a resin-encapsulated semiconductor device. 半導体素子が搭載されたリードフレームを１対の金型の間に挟み込んで型締めし、前記１対の金型のうちの一方の金型に突設されたリード押え部によって前記リードフレームのインナーリード部を押圧した状態で、前記１対の金型によって形成される閉空間に樹脂を注入することにより、封止樹脂の表面に前記インナーリード部の表面が露出する構造の半導体装置を製造する樹脂封止型半導体装置の製造方法であって、
前記１対の金型のうちの他方の金型として、前記一方の金型の前記リード押え部よりも前記閉空間から遠い位置にて前記インナーリード部を押圧する突出部が突設された金型を用いることを特徴とする、樹脂封止型半導体装置の製造方法。A lead frame on which a semiconductor element is mounted is sandwiched between a pair of molds and clamped, and an inner portion of the lead frame is formed by a lead pressing portion projecting from one of the pair of molds. A semiconductor device having a structure in which the surface of the inner lead portion is exposed to the surface of the sealing resin by injecting resin into a closed space formed by the pair of molds while the lead portion is pressed. A method for manufacturing a resin-encapsulated semiconductor device,
As the other mold of the pair of molds, a mold projecting a protrusion that presses the inner lead portion at a position farther from the closed space than the lead pressing portion of the one mold. A method for manufacturing a resin-encapsulated semiconductor device, wherein a mold is used.
JP26913898A 1998-09-24 1998-09-24 Manufacturing method of resin-encapsulated semiconductor device Expired - Fee Related JP3833832B2 (en)

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