JPS6095963A - ダイナミツク・ランダム・アクセス・メモリ - Google Patents
ダイナミツク・ランダム・アクセス・メモリInfo
- Publication number
- JPS6095963A JPS6095963A JP58203976A JP20397683A JPS6095963A JP S6095963 A JPS6095963 A JP S6095963A JP 58203976 A JP58203976 A JP 58203976A JP 20397683 A JP20397683 A JP 20397683A JP S6095963 A JPS6095963 A JP S6095963A
- Authority
- JP
- Japan
- Prior art keywords
- word line
- bit line
- cell
- reading
- read
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005669 field effect Effects 0.000 claims description 3
- 238000003860 storage Methods 0.000 claims description 2
- 238000009792 diffusion process Methods 0.000 abstract description 7
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 7
- 229920005591 polysilicon Polymers 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 239000003990 capacitor Substances 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 101100426973 Caenorhabditis elegans ttr-3 gene Proteins 0.000 description 1
- 230000001934 delay Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
Landscapes
- Semiconductor Memories (AREA)
- Dram (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58203976A JPS6095963A (ja) | 1983-10-31 | 1983-10-31 | ダイナミツク・ランダム・アクセス・メモリ |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58203976A JPS6095963A (ja) | 1983-10-31 | 1983-10-31 | ダイナミツク・ランダム・アクセス・メモリ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6095963A true JPS6095963A (ja) | 1985-05-29 |
| JPH0455345B2 JPH0455345B2 (enExample) | 1992-09-03 |
Family
ID=16482737
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58203976A Granted JPS6095963A (ja) | 1983-10-31 | 1983-10-31 | ダイナミツク・ランダム・アクセス・メモリ |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6095963A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5841690A (en) * | 1995-12-12 | 1998-11-24 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor memory |
| JP2022041690A (ja) * | 2020-09-01 | 2022-03-11 | 有限会社 宮脇工房 | 電磁コイル |
-
1983
- 1983-10-31 JP JP58203976A patent/JPS6095963A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5841690A (en) * | 1995-12-12 | 1998-11-24 | Mitsubishi Denki Kabushiki Kaisha | Semiconductor memory |
| JP2022041690A (ja) * | 2020-09-01 | 2022-03-11 | 有限会社 宮脇工房 | 電磁コイル |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0455345B2 (enExample) | 1992-09-03 |
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