JPS6092653A - 半導体集積回路装置 - Google Patents

半導体集積回路装置

Info

Publication number
JPS6092653A
JPS6092653A JP58200214A JP20021483A JPS6092653A JP S6092653 A JPS6092653 A JP S6092653A JP 58200214 A JP58200214 A JP 58200214A JP 20021483 A JP20021483 A JP 20021483A JP S6092653 A JPS6092653 A JP S6092653A
Authority
JP
Japan
Prior art keywords
type
island
region
integrated circuit
circuit device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58200214A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0517711B2 (enrdf_load_stackoverflow
Inventor
Junichi Ono
淳一 大野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP58200214A priority Critical patent/JPS6092653A/ja
Publication of JPS6092653A publication Critical patent/JPS6092653A/ja
Publication of JPH0517711B2 publication Critical patent/JPH0517711B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H10D84/907—CMOS gate arrays

Landscapes

  • Design And Manufacture Of Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
JP58200214A 1983-10-26 1983-10-26 半導体集積回路装置 Granted JPS6092653A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58200214A JPS6092653A (ja) 1983-10-26 1983-10-26 半導体集積回路装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58200214A JPS6092653A (ja) 1983-10-26 1983-10-26 半導体集積回路装置

Publications (2)

Publication Number Publication Date
JPS6092653A true JPS6092653A (ja) 1985-05-24
JPH0517711B2 JPH0517711B2 (enrdf_load_stackoverflow) 1993-03-09

Family

ID=16420708

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58200214A Granted JPS6092653A (ja) 1983-10-26 1983-10-26 半導体集積回路装置

Country Status (1)

Country Link
JP (1) JPS6092653A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6370439A (ja) * 1986-09-11 1988-03-30 Seiko Epson Corp 半導体集積装置
US5264720A (en) * 1989-09-22 1993-11-23 Nippondenso Co., Ltd. High withstanding voltage transistor
US6140161A (en) * 1997-06-06 2000-10-31 Nec Corporation Semiconductor integrated circuit device and method for making the same
US6414357B1 (en) 1998-06-05 2002-07-02 Nec Corporation Master-slice type semiconductor IC device with different kinds of basic cells
JP2003069027A (ja) * 2001-08-24 2003-03-07 Semiconductor Energy Lab Co Ltd 評価用素子群、評価用素子群の作製方法、半導体装置の評価方法及び半導体装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6370439A (ja) * 1986-09-11 1988-03-30 Seiko Epson Corp 半導体集積装置
US5264720A (en) * 1989-09-22 1993-11-23 Nippondenso Co., Ltd. High withstanding voltage transistor
US6140161A (en) * 1997-06-06 2000-10-31 Nec Corporation Semiconductor integrated circuit device and method for making the same
US6414357B1 (en) 1998-06-05 2002-07-02 Nec Corporation Master-slice type semiconductor IC device with different kinds of basic cells
JP2003069027A (ja) * 2001-08-24 2003-03-07 Semiconductor Energy Lab Co Ltd 評価用素子群、評価用素子群の作製方法、半導体装置の評価方法及び半導体装置

Also Published As

Publication number Publication date
JPH0517711B2 (enrdf_load_stackoverflow) 1993-03-09

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