JPS6092614A - 半導体装置の製造方法 - Google Patents
半導体装置の製造方法Info
- Publication number
- JPS6092614A JPS6092614A JP58201316A JP20131683A JPS6092614A JP S6092614 A JPS6092614 A JP S6092614A JP 58201316 A JP58201316 A JP 58201316A JP 20131683 A JP20131683 A JP 20131683A JP S6092614 A JPS6092614 A JP S6092614A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- diffusion layer
- opening
- exposed
- semiconductor device
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 13
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 238000009792 diffusion process Methods 0.000 claims abstract description 16
- 238000005530 etching Methods 0.000 claims abstract description 8
- 238000000059 patterning Methods 0.000 claims abstract 2
- 238000000034 method Methods 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 3
- 230000035515 penetration Effects 0.000 description 2
- 230000000740 bleeding effect Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58201316A JPS6092614A (ja) | 1983-10-27 | 1983-10-27 | 半導体装置の製造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58201316A JPS6092614A (ja) | 1983-10-27 | 1983-10-27 | 半導体装置の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6092614A true JPS6092614A (ja) | 1985-05-24 |
JPH0476208B2 JPH0476208B2 (enrdf_load_stackoverflow) | 1992-12-03 |
Family
ID=16438984
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58201316A Granted JPS6092614A (ja) | 1983-10-27 | 1983-10-27 | 半導体装置の製造方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6092614A (enrdf_load_stackoverflow) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4969295A (en) * | 1988-08-08 | 1990-11-13 | Mazda Motor Corporation | Door structure of vehicle |
JPH06216064A (ja) * | 1993-01-18 | 1994-08-05 | Nec Corp | Alコンタクト構造およびその製造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53166222U (enrdf_load_stackoverflow) * | 1977-06-01 | 1978-12-26 | ||
JPH0396234U (enrdf_load_stackoverflow) * | 1990-01-23 | 1991-10-01 | ||
JP2006192961A (ja) * | 2005-01-11 | 2006-07-27 | Seirei Ind Co Ltd | シート支持構造 |
-
1983
- 1983-10-27 JP JP58201316A patent/JPS6092614A/ja active Granted
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53166222U (enrdf_load_stackoverflow) * | 1977-06-01 | 1978-12-26 | ||
JPH0396234U (enrdf_load_stackoverflow) * | 1990-01-23 | 1991-10-01 | ||
JP2006192961A (ja) * | 2005-01-11 | 2006-07-27 | Seirei Ind Co Ltd | シート支持構造 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4969295A (en) * | 1988-08-08 | 1990-11-13 | Mazda Motor Corporation | Door structure of vehicle |
JPH06216064A (ja) * | 1993-01-18 | 1994-08-05 | Nec Corp | Alコンタクト構造およびその製造方法 |
Also Published As
Publication number | Publication date |
---|---|
JPH0476208B2 (enrdf_load_stackoverflow) | 1992-12-03 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR920700471A (ko) | 수율 향상을 위한 선택적인 텅스텐 상호 접속 라인의 보수 방법 | |
JPH03129818A (ja) | 半導体装置の製造方法 | |
JPS6092614A (ja) | 半導体装置の製造方法 | |
KR100449026B1 (ko) | 트렌치를 이용한 금속구조물 제조방법 | |
JPS57145340A (en) | Manufacture of semiconductor device | |
JPH02117153A (ja) | 半導体素子の形成方法 | |
JPS59132141A (ja) | 半導体装置の製造方法 | |
JPH0150098B2 (enrdf_load_stackoverflow) | ||
JPS61172336A (ja) | 半導体装置電極開口部の形成方法 | |
JPS63164338A (ja) | 半導体装置の製造方法 | |
JPS61263138A (ja) | 半導体装置の製造方法 | |
JPS583250A (ja) | 半導体装置の製造方法 | |
KR19980048790A (ko) | 반도체 소자의 메탈콘택 및 라인 형성방법 | |
JPH02111052A (ja) | 多層配線形成法 | |
JPS63237547A (ja) | 半導体装置の製造方法 | |
JPH02170420A (ja) | 半導体素子の製造方法 | |
KR960013140B1 (ko) | 반도체 소자의 제조 방법 | |
JPH0364933A (ja) | 半導体装置の製造方法 | |
JPS63237548A (ja) | 半導体装置の製造方法 | |
JPS63122125A (ja) | 半導体装置の製造方法 | |
JPS61296722A (ja) | 半導体装置の製造方法 | |
JPS62274715A (ja) | 半導体装置の製造方法 | |
JPS63287034A (ja) | 半導体装置 | |
JPH03127827A (ja) | 半導体装置の製造法 | |
JPH01145833A (ja) | 半導体装置の製造方法 |