JPS6086888A - 半導体レ−ザ装置の製造方法 - Google Patents
半導体レ−ザ装置の製造方法Info
- Publication number
- JPS6086888A JPS6086888A JP19565783A JP19565783A JPS6086888A JP S6086888 A JPS6086888 A JP S6086888A JP 19565783 A JP19565783 A JP 19565783A JP 19565783 A JP19565783 A JP 19565783A JP S6086888 A JPS6086888 A JP S6086888A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gaas
- single crystal
- stripe
- double
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 title claims description 10
- 239000013078 crystal Substances 0.000 claims abstract description 22
- 239000010409 thin film Substances 0.000 claims abstract description 9
- 238000010894 electron beam technology Methods 0.000 claims description 3
- 230000001678 irradiating effect Effects 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract description 20
- 238000000034 method Methods 0.000 abstract description 13
- 239000000758 substrate Substances 0.000 abstract description 11
- 230000010355 oscillation Effects 0.000 abstract description 9
- 238000010438 heat treatment Methods 0.000 abstract description 6
- 238000009792 diffusion process Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 241000257465 Echinoidea Species 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
Landscapes
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19565783A JPS6086888A (ja) | 1983-10-19 | 1983-10-19 | 半導体レ−ザ装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19565783A JPS6086888A (ja) | 1983-10-19 | 1983-10-19 | 半導体レ−ザ装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6086888A true JPS6086888A (ja) | 1985-05-16 |
| JPH0559593B2 JPH0559593B2 (enrdf_load_stackoverflow) | 1993-08-31 |
Family
ID=16344817
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19565783A Granted JPS6086888A (ja) | 1983-10-19 | 1983-10-19 | 半導体レ−ザ装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6086888A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03297187A (ja) * | 1990-04-17 | 1991-12-27 | Nec Corp | 高出力半導体レーザ素子及びその製造方法 |
-
1983
- 1983-10-19 JP JP19565783A patent/JPS6086888A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03297187A (ja) * | 1990-04-17 | 1991-12-27 | Nec Corp | 高出力半導体レーザ素子及びその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0559593B2 (enrdf_load_stackoverflow) | 1993-08-31 |
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