JPS6079725A - 被処理物の離脱装置 - Google Patents
被処理物の離脱装置Info
- Publication number
- JPS6079725A JPS6079725A JP18743683A JP18743683A JPS6079725A JP S6079725 A JPS6079725 A JP S6079725A JP 18743683 A JP18743683 A JP 18743683A JP 18743683 A JP18743683 A JP 18743683A JP S6079725 A JPS6079725 A JP S6079725A
- Authority
- JP
- Japan
- Prior art keywords
- processed
- discharge hole
- electrode
- dielectric film
- electrostatic chuck
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 title abstract description 10
- 238000000034 method Methods 0.000 abstract description 4
- 238000005530 etching Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 230000010287 polarization Effects 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 239000004020 conductor Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229930091051 Arenine Natural products 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000005667 attractant Substances 0.000 description 1
- 230000031902 chemoattractant activity Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000005293 physical law Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000008961 swelling Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18743683A JPS6079725A (ja) | 1983-10-06 | 1983-10-06 | 被処理物の離脱装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18743683A JPS6079725A (ja) | 1983-10-06 | 1983-10-06 | 被処理物の離脱装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6079725A true JPS6079725A (ja) | 1985-05-07 |
| JPH0263305B2 JPH0263305B2 (OSRAM) | 1990-12-27 |
Family
ID=16206023
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18743683A Granted JPS6079725A (ja) | 1983-10-06 | 1983-10-06 | 被処理物の離脱装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6079725A (OSRAM) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6230325A (ja) * | 1985-07-31 | 1987-02-09 | Tokuda Seisakusho Ltd | 半導体処理装置 |
| JPH07297474A (ja) * | 1994-04-28 | 1995-11-10 | Matsushita Electric Ind Co Ltd | 気体レーザ装置 |
-
1983
- 1983-10-06 JP JP18743683A patent/JPS6079725A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS6230325A (ja) * | 1985-07-31 | 1987-02-09 | Tokuda Seisakusho Ltd | 半導体処理装置 |
| JPH07297474A (ja) * | 1994-04-28 | 1995-11-10 | Matsushita Electric Ind Co Ltd | 気体レーザ装置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0263305B2 (OSRAM) | 1990-12-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4431473A (en) | RIE Apparatus utilizing a shielded magnetron to enhance etching | |
| JPH06158361A (ja) | プラズマ処理装置 | |
| JPH06188305A (ja) | 被吸着体の離脱装置および被吸着体の離脱方法およびプラズマ処理装置 | |
| JPS6240728A (ja) | ドライエツチング装置 | |
| JPS6079725A (ja) | 被処理物の離脱装置 | |
| JPH04132219A (ja) | プラズマ処理装置とそれを用いる半導体装置の製造方法 | |
| JPH0220368B2 (OSRAM) | ||
| JPS60150632A (ja) | 被処理物の離脱装置 | |
| JPH0513556A (ja) | 静電チヤツク | |
| JP2007258636A (ja) | ドライエッチング方法およびその装置 | |
| JPS605539A (ja) | プラズマ処理方法 | |
| JPH0878512A (ja) | 静電吸着装置及び方法 | |
| JPS62120932A (ja) | 静電チヤツク装置 | |
| KR100828590B1 (ko) | 대기압 플라즈마 발생장치 | |
| JPS61163639A (ja) | プラズマ処理方法及び装置 | |
| JP3178332B2 (ja) | プラズマ処理装置の運転方法 | |
| JPS6336138B2 (OSRAM) | ||
| JPS5913327A (ja) | ドライエツチング装置 | |
| JPS6218727A (ja) | 半導体処理装置 | |
| JPH049473A (ja) | 基板処理装置 | |
| JP2885578B2 (ja) | スパッタリング装置 | |
| JPH0528773Y2 (OSRAM) | ||
| JPH04315797A (ja) | プラズマ処理装置およびそのプラズマ源のクリーニング方法 | |
| JPH03211725A (ja) | プラズマ処理方法及び装置 | |
| JPS6399148A (ja) | 静電チヤツク装置 |