JPS6076184A - 半導体レ−ザ - Google Patents

半導体レ−ザ

Info

Publication number
JPS6076184A
JPS6076184A JP18486183A JP18486183A JPS6076184A JP S6076184 A JPS6076184 A JP S6076184A JP 18486183 A JP18486183 A JP 18486183A JP 18486183 A JP18486183 A JP 18486183A JP S6076184 A JPS6076184 A JP S6076184A
Authority
JP
Japan
Prior art keywords
layer
mesa stripe
current blocking
groove
blocking layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18486183A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6353718B2 (cg-RX-API-DMAC7.html
Inventor
Mitsuhiro Kitamura
北村　光弘
Hitoshi Kawaguchi
仁司 河口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
NTT Inc
Original Assignee
NEC Corp
Nippon Telegraph and Telephone Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Telegraph and Telephone Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP18486183A priority Critical patent/JPS6076184A/ja
Publication of JPS6076184A publication Critical patent/JPS6076184A/ja
Publication of JPS6353718B2 publication Critical patent/JPS6353718B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/1053—Comprising an active region having a varying composition or cross-section in a specific direction
    • H01S5/1064—Comprising an active region having a varying composition or cross-section in a specific direction varying width along the optical axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • H01S5/2277—Buried mesa structure ; Striped active layer mesa created by etching double channel planar buried heterostructure [DCPBH] laser

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
JP18486183A 1983-10-03 1983-10-03 半導体レ−ザ Granted JPS6076184A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18486183A JPS6076184A (ja) 1983-10-03 1983-10-03 半導体レ−ザ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18486183A JPS6076184A (ja) 1983-10-03 1983-10-03 半導体レ−ザ

Publications (2)

Publication Number Publication Date
JPS6076184A true JPS6076184A (ja) 1985-04-30
JPS6353718B2 JPS6353718B2 (cg-RX-API-DMAC7.html) 1988-10-25

Family

ID=16160586

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18486183A Granted JPS6076184A (ja) 1983-10-03 1983-10-03 半導体レ−ザ

Country Status (1)

Country Link
JP (1) JPS6076184A (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06283800A (ja) * 1993-03-25 1994-10-07 Nec Corp 半導体レーザ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06283800A (ja) * 1993-03-25 1994-10-07 Nec Corp 半導体レーザ

Also Published As

Publication number Publication date
JPS6353718B2 (cg-RX-API-DMAC7.html) 1988-10-25

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