JPS6074434A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

Info

Publication number
JPS6074434A
JPS6074434A JP58181157A JP18115783A JPS6074434A JP S6074434 A JPS6074434 A JP S6074434A JP 58181157 A JP58181157 A JP 58181157A JP 18115783 A JP18115783 A JP 18115783A JP S6074434 A JPS6074434 A JP S6074434A
Authority
JP
Japan
Prior art keywords
substrate
film
mark
position matching
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58181157A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0544175B2 (enrdf_load_stackoverflow
Inventor
Koichi Kobayashi
孝一 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58181157A priority Critical patent/JPS6074434A/ja
Publication of JPS6074434A publication Critical patent/JPS6074434A/ja
Publication of JPH0544175B2 publication Critical patent/JPH0544175B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electron Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP58181157A 1983-09-29 1983-09-29 半導体装置の製造方法 Granted JPS6074434A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58181157A JPS6074434A (ja) 1983-09-29 1983-09-29 半導体装置の製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58181157A JPS6074434A (ja) 1983-09-29 1983-09-29 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPS6074434A true JPS6074434A (ja) 1985-04-26
JPH0544175B2 JPH0544175B2 (enrdf_load_stackoverflow) 1993-07-05

Family

ID=16095881

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58181157A Granted JPS6074434A (ja) 1983-09-29 1983-09-29 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JPS6074434A (enrdf_load_stackoverflow)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5856334A (ja) * 1981-09-29 1983-04-04 Fujitsu Ltd 位置合わせマ−ク
JPS58102523A (ja) * 1981-12-15 1983-06-18 Toshiba Corp 位置合わは用マ−カ

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5856334A (ja) * 1981-09-29 1983-04-04 Fujitsu Ltd 位置合わせマ−ク
JPS58102523A (ja) * 1981-12-15 1983-06-18 Toshiba Corp 位置合わは用マ−カ

Also Published As

Publication number Publication date
JPH0544175B2 (enrdf_load_stackoverflow) 1993-07-05

Similar Documents

Publication Publication Date Title
JPH0122728B2 (enrdf_load_stackoverflow)
JPS61173251A (ja) フオトマスクの製造方法
JPS6074434A (ja) 半導体装置の製造方法
JPS61273545A (ja) フオトマスク
KR101015176B1 (ko) 전사용마스크기판의 제조방법, 전사용마스크기판 및전사용마스크
JPS6351641A (ja) 単結晶または多結晶Si膜の微細パタ−ン形成方法
JPS5812341B2 (ja) ドライエツチング法
JPH01128522A (ja) レジストパターンの形成方法
JPS5898931A (ja) 半導体装置の製造方法
JPH03116716A (ja) X線マスクおよびその製造方法
JP3067340B2 (ja) 半導体装置
KR20020043184A (ko) 전자빔프로젝션리소그래피용 마스크 및 그의 제조방법
JP2638576B2 (ja) X線露光マスクの製造方法
JPS605230B2 (ja) ジヨセフソン素子の製造方法
JPS60110124A (ja) 微細パタ−ン加工方法
JPH02262321A (ja) 半導体装置の製造方法
JPH03101217A (ja) X線露光用マスクの製造方法
JPS61133632A (ja) 半導体装置の製造方法
JPH0287626A (ja) 半導体装置の製造方法
JPS61161716A (ja) ゲ−ト電極パタ−ンの形成方法
JPS6327024A (ja) 半導体装置の製造方法
JPH0626203B2 (ja) 微細加工方法
JPH03259528A (ja) 半導体装置の製造方法
JPS62136026A (ja) 半導体装置の製造方法
JPH05265223A (ja) レジストパターンの形成方法