JPS6070594A - 不揮発性ランダムアクセス半導体メモリ - Google Patents
不揮発性ランダムアクセス半導体メモリInfo
- Publication number
- JPS6070594A JPS6070594A JP58179609A JP17960983A JPS6070594A JP S6070594 A JPS6070594 A JP S6070594A JP 58179609 A JP58179609 A JP 58179609A JP 17960983 A JP17960983 A JP 17960983A JP S6070594 A JPS6070594 A JP S6070594A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor memory
- output node
- bistable circuit
- drain
- memory element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 64
- 239000003990 capacitor Substances 0.000 claims description 8
- 230000005669 field effect Effects 0.000 claims description 5
- 230000005684 electric field Effects 0.000 abstract description 5
- 238000010586 diagram Methods 0.000 description 5
- 239000000758 substrate Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000000717 retained effect Effects 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 108700012441 IGF2 Proteins 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 230000006386 memory function Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Non-Volatile Memory (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58179609A JPS6070594A (ja) | 1983-09-28 | 1983-09-28 | 不揮発性ランダムアクセス半導体メモリ |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP58179609A JPS6070594A (ja) | 1983-09-28 | 1983-09-28 | 不揮発性ランダムアクセス半導体メモリ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6070594A true JPS6070594A (ja) | 1985-04-22 |
JPH0318274B2 JPH0318274B2 (enrdf_load_stackoverflow) | 1991-03-12 |
Family
ID=16068737
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP58179609A Granted JPS6070594A (ja) | 1983-09-28 | 1983-09-28 | 不揮発性ランダムアクセス半導体メモリ |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6070594A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008247407A (ja) * | 2007-03-29 | 2008-10-16 | Tokiko Techno Kk | 燃料供給装置 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5891597A (ja) * | 1981-11-20 | 1983-05-31 | ソシエテ・プ−ル・レチユ−ド・エ・ラ・フアブリカシオン・デ・シルキユイ・アンテグレ・スペシオ−−ウ−・エフ・セ−・イ−・エス | ダイナミツクリセツト機能を有する不揮発性フリツプフロツプ |
-
1983
- 1983-09-28 JP JP58179609A patent/JPS6070594A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5891597A (ja) * | 1981-11-20 | 1983-05-31 | ソシエテ・プ−ル・レチユ−ド・エ・ラ・フアブリカシオン・デ・シルキユイ・アンテグレ・スペシオ−−ウ−・エフ・セ−・イ−・エス | ダイナミツクリセツト機能を有する不揮発性フリツプフロツプ |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008247407A (ja) * | 2007-03-29 | 2008-10-16 | Tokiko Techno Kk | 燃料供給装置 |
Also Published As
Publication number | Publication date |
---|---|
JPH0318274B2 (enrdf_load_stackoverflow) | 1991-03-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US5770963A (en) | Flash memory with improved erasability and its circuitry | |
US5465235A (en) | Non-volatile memory device with a sense amplifier capable of copying back | |
US4432072A (en) | Non-volatile dynamic RAM cell | |
JP3152762B2 (ja) | 不揮発性半導体記憶装置 | |
US6243292B1 (en) | Nonvolatile semiconductor memory device capable of reducing memory array area | |
JPS63153799A (ja) | 半導体メモリ | |
US7995399B2 (en) | NAND memory device and programming methods | |
US4635229A (en) | Semiconductor memory device including non-volatile transistor for storing data in a bistable circuit | |
JPS621193A (ja) | 半導体記憶装置 | |
JPH0212695A (ja) | メモリセル及びその読み出し方法 | |
KR900001774B1 (ko) | 바이어스 전압 발생기를 포함하는 반도체 메모리 회로 | |
US4803662A (en) | EEPROM cell | |
JPH0581999B2 (enrdf_load_stackoverflow) | ||
JPS6070594A (ja) | 不揮発性ランダムアクセス半導体メモリ | |
JP2542110B2 (ja) | 不揮発性半導体記憶装置 | |
JPS59162694A (ja) | 半導体メモリ | |
JPS58128090A (ja) | ダイナミツクicメモリ | |
JPH04229655A (ja) | 不揮発性半導体記憶装置における消去方式 | |
JPS6074578A (ja) | 不揮発性半導体メモリ装置 | |
JP3095918B2 (ja) | 不揮発性半導体メモリ | |
JPH01125860A (ja) | 不揮発性ランダム・アクセス半導体記憶装置 | |
JPH02133960A (ja) | 書込可能不揮発性半導体記憶装置 | |
JPS5979489A (ja) | 半導体メモリ | |
JP2569759B2 (ja) | 不揮発性ランダム・アクセス・半導体メモリ | |
JPS6410108B2 (enrdf_load_stackoverflow) |