JPH0318274B2 - - Google Patents

Info

Publication number
JPH0318274B2
JPH0318274B2 JP58179609A JP17960983A JPH0318274B2 JP H0318274 B2 JPH0318274 B2 JP H0318274B2 JP 58179609 A JP58179609 A JP 58179609A JP 17960983 A JP17960983 A JP 17960983A JP H0318274 B2 JPH0318274 B2 JP H0318274B2
Authority
JP
Japan
Prior art keywords
semiconductor memory
memory element
bistable circuit
output node
drain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58179609A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6070594A (ja
Inventor
Takeshi Watanabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Electric Co Ltd filed Critical Nippon Electric Co Ltd
Priority to JP58179609A priority Critical patent/JPS6070594A/ja
Publication of JPS6070594A publication Critical patent/JPS6070594A/ja
Publication of JPH0318274B2 publication Critical patent/JPH0318274B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Non-Volatile Memory (AREA)
JP58179609A 1983-09-28 1983-09-28 不揮発性ランダムアクセス半導体メモリ Granted JPS6070594A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58179609A JPS6070594A (ja) 1983-09-28 1983-09-28 不揮発性ランダムアクセス半導体メモリ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58179609A JPS6070594A (ja) 1983-09-28 1983-09-28 不揮発性ランダムアクセス半導体メモリ

Publications (2)

Publication Number Publication Date
JPS6070594A JPS6070594A (ja) 1985-04-22
JPH0318274B2 true JPH0318274B2 (enrdf_load_stackoverflow) 1991-03-12

Family

ID=16068737

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58179609A Granted JPS6070594A (ja) 1983-09-28 1983-09-28 不揮発性ランダムアクセス半導体メモリ

Country Status (1)

Country Link
JP (1) JPS6070594A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4936954B2 (ja) * 2007-03-29 2012-05-23 トキコテクノ株式会社 燃料供給装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2517143A1 (fr) * 1981-11-20 1983-05-27 Efcis Bascule bistable a stockage non volatil et a repositionnement dynamique

Also Published As

Publication number Publication date
JPS6070594A (ja) 1985-04-22

Similar Documents

Publication Publication Date Title
US5189641A (en) Non-volatile random access memory device
EP0028935B1 (en) Nonvolatile semiconductor memory circuits
JP3152762B2 (ja) 不揮発性半導体記憶装置
JPS6314505B2 (enrdf_load_stackoverflow)
US4363110A (en) Non-volatile dynamic RAM cell
JPH02168497A (ja) 不揮発性半導体メモリシステム
JPS5858759B2 (ja) メモリ装置
JPS5833638B2 (ja) メモリ装置
KR900001774B1 (ko) 바이어스 전압 발생기를 포함하는 반도체 메모리 회로
JPS60151898A (ja) 不揮発性ランダムアクセスメモリセル
US4803662A (en) EEPROM cell
JPS5922317B2 (ja) 半導体メモリ
JPS5953637B2 (ja) 記憶回路
JPH0318274B2 (enrdf_load_stackoverflow)
JPS6027118B2 (ja) 半導体メモリ装置
JP2542110B2 (ja) 不揮発性半導体記憶装置
JPH04229655A (ja) 不揮発性半導体記憶装置における消去方式
JPS6223396B2 (enrdf_load_stackoverflow)
JPS59162694A (ja) 半導体メモリ
JP3095918B2 (ja) 不揮発性半導体メモリ
JPH0527195B2 (enrdf_load_stackoverflow)
JPH0278098A (ja) 内容参照メモリセル
JPH01125860A (ja) 不揮発性ランダム・アクセス半導体記憶装置
JP2648099B2 (ja) 不揮発性半導体メモリ装置およびそのデータ消去方法
JPS5979489A (ja) 半導体メモリ