JPS6066819A - 位置合わせ方法 - Google Patents

位置合わせ方法

Info

Publication number
JPS6066819A
JPS6066819A JP58175354A JP17535483A JPS6066819A JP S6066819 A JPS6066819 A JP S6066819A JP 58175354 A JP58175354 A JP 58175354A JP 17535483 A JP17535483 A JP 17535483A JP S6066819 A JPS6066819 A JP S6066819A
Authority
JP
Japan
Prior art keywords
light
grating
wafer
substrate
diffraction grating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58175354A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0441485B2 (enrdf_load_stackoverflow
Inventor
Noboru Nomura
登 野村
Koichi Kugimiya
公一 釘宮
Ryukichi Matsumura
松村　隆吉
Taketoshi Yonezawa
米澤　武敏
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP58175354A priority Critical patent/JPS6066819A/ja
Priority to US06/599,734 priority patent/US4636077A/en
Publication of JPS6066819A publication Critical patent/JPS6066819A/ja
Priority to US07/296,721 priority patent/USRE33669E/en
Publication of JPH0441485B2 publication Critical patent/JPH0441485B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7049—Technique, e.g. interferometric
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70408—Interferometric lithography; Holographic lithography; Self-imaging lithography, e.g. utilizing the Talbot effect
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F9/00—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically
    • G03F9/70—Registration or positioning of originals, masks, frames, photographic sheets or textured or patterned surfaces, e.g. automatically for microlithography
    • G03F9/7073—Alignment marks and their environment
    • G03F9/7076—Mark details, e.g. phase grating mark, temporary mark

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Control Of Position Or Direction (AREA)
JP58175354A 1983-04-15 1983-09-22 位置合わせ方法 Granted JPS6066819A (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP58175354A JPS6066819A (ja) 1983-09-22 1983-09-22 位置合わせ方法
US06/599,734 US4636077A (en) 1983-04-15 1984-04-12 Aligning exposure method
US07/296,721 USRE33669E (en) 1983-04-15 1989-01-12 Aligning exposure method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58175354A JPS6066819A (ja) 1983-09-22 1983-09-22 位置合わせ方法

Publications (2)

Publication Number Publication Date
JPS6066819A true JPS6066819A (ja) 1985-04-17
JPH0441485B2 JPH0441485B2 (enrdf_load_stackoverflow) 1992-07-08

Family

ID=15994602

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58175354A Granted JPS6066819A (ja) 1983-04-15 1983-09-22 位置合わせ方法

Country Status (1)

Country Link
JP (1) JPS6066819A (enrdf_load_stackoverflow)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6489430A (en) * 1987-09-30 1989-04-03 Toshiba Corp Position aligning method
JPH01255222A (ja) * 1988-04-05 1989-10-12 Toshiba Corp Ｔｔｌアライメント装置
JP2007180548A (ja) * 2005-12-27 2007-07-12 Asml Netherlands Bv パターンアライメント方法およびリソグラフィ装置
CN102789137A (zh) * 2012-07-16 2012-11-21 中国科学院光电技术研究所 一种基于莫尔条纹的反射式光刻对准装置
CN103955124A (zh) * 2014-05-05 2014-07-30 中国科学院微电子研究所 一种光学精密系统的对准装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6489430A (en) * 1987-09-30 1989-04-03 Toshiba Corp Position aligning method
JPH01255222A (ja) * 1988-04-05 1989-10-12 Toshiba Corp Ｔｔｌアライメント装置
JP2007180548A (ja) * 2005-12-27 2007-07-12 Asml Netherlands Bv パターンアライメント方法およびリソグラフィ装置
CN102789137A (zh) * 2012-07-16 2012-11-21 中国科学院光电技术研究所 一种基于莫尔条纹的反射式光刻对准装置
CN103955124A (zh) * 2014-05-05 2014-07-30 中国科学院微电子研究所 一种光学精密系统的对准装置

Also Published As

Publication number Publication date
JPH0441485B2 (enrdf_load_stackoverflow) 1992-07-08

Similar Documents

Publication Publication Date Title
KR100306471B1 (ko) 마스크패턴투영장치
CN1495540B (zh) 利用至少两个波长的光刻系统的对准系统和方法
US5100237A (en) Apparatus for projecting a mask pattern on a substrate
DE69817491T2 (de) Lithographisches belichtungsgerät mit einer ausserhalb der belichtungsachse liegenden ausrichtungsvorrichtung
DE69704998T2 (de) Ausrichtungsvorrichtung und lithographischer apparat mit einer solchen vorrichtung
JPH0752088B2 (ja) アラインメント方法
US4771180A (en) Exposure apparatus including an optical system for aligning a reticle and a wafer
JPS6066819A (ja) 位置合わせ方法
JPH07270189A (ja) 定点検出装置
JP2578742B2 (ja) 位置合わせ方法
JPH0544817B2 (enrdf_load_stackoverflow)
JPS6066818A (ja) 位置合わせ方法
JPS61208220A (ja) 露光装置及び位置合わせ方法
JPS63185024A (ja) 露光装置
JPS6286722A (ja) 露光装置
JPS6173958A (ja) 露光装置
JPS62128120A (ja) 露光装置
JPH0695007B2 (ja) 位置合せ方法および露光装置
JPH0334307A (ja) 半導体ウエハの露光方法
JPH0441486B2 (enrdf_load_stackoverflow)
JPH0441285B2 (enrdf_load_stackoverflow)
JPS6318624A (ja) 露光装置
JPH07101665B2 (ja) 露光装置
JPS63298102A (ja) 位置合わせ方法
JPH02298016A (ja) 露光装置