JPS6065798A - 窒化ガリウム単結晶の成長方法 - Google Patents
窒化ガリウム単結晶の成長方法Info
- Publication number
- JPS6065798A JPS6065798A JP17248683A JP17248683A JPS6065798A JP S6065798 A JPS6065798 A JP S6065798A JP 17248683 A JP17248683 A JP 17248683A JP 17248683 A JP17248683 A JP 17248683A JP S6065798 A JPS6065798 A JP S6065798A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- gan
- gas
- vapor phase
- gan single
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims description 87
- 229910002601 GaN Inorganic materials 0.000 title claims description 69
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims description 52
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 22
- 239000007789 gas Substances 0.000 claims description 21
- 150000002259 gallium compounds Chemical class 0.000 claims description 14
- 239000011701 zinc Substances 0.000 claims description 13
- 239000012159 carrier gas Substances 0.000 claims description 12
- 229910052594 sapphire Inorganic materials 0.000 claims description 12
- 239000010980 sapphire Substances 0.000 claims description 12
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 12
- 229910021529 ammonia Inorganic materials 0.000 claims description 11
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 10
- 229910052725 zinc Inorganic materials 0.000 claims description 10
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 claims description 8
- 238000001947 vapour-phase growth Methods 0.000 claims description 6
- 239000012808 vapor phase Substances 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- -1 alkyl gallium Chemical compound 0.000 claims description 2
- 239000010408 film Substances 0.000 description 10
- 238000000927 vapour-phase epitaxy Methods 0.000 description 9
- 239000002994 raw material Substances 0.000 description 6
- 150000004820 halides Chemical class 0.000 description 5
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 5
- 150000001875 compounds Chemical class 0.000 description 3
- 238000002109 crystal growth method Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 125000002524 organometallic group Chemical group 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 150000003752 zinc compounds Chemical class 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- 241000577395 Thenus Species 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- AXAZMDOAUQTMOW-UHFFFAOYSA-N dimethylzinc Chemical compound C[Zn]C AXAZMDOAUQTMOW-UHFFFAOYSA-N 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical compound CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17248683A JPS6065798A (ja) | 1983-09-19 | 1983-09-19 | 窒化ガリウム単結晶の成長方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17248683A JPS6065798A (ja) | 1983-09-19 | 1983-09-19 | 窒化ガリウム単結晶の成長方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6065798A true JPS6065798A (ja) | 1985-04-15 |
| JPH0331678B2 JPH0331678B2 (enrdf_load_stackoverflow) | 1991-05-08 |
Family
ID=15942874
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17248683A Granted JPS6065798A (ja) | 1983-09-19 | 1983-09-19 | 窒化ガリウム単結晶の成長方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6065798A (enrdf_load_stackoverflow) |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0687749A1 (en) * | 1994-06-14 | 1995-12-20 | Thomas Swan And Co., Ltd. | Apparatus for chemical vapour deposition |
| JPH0940490A (ja) * | 1995-07-27 | 1997-02-10 | Hitachi Cable Ltd | 窒化ガリウム結晶の製造方法 |
| KR100416738B1 (ko) * | 1996-12-30 | 2004-04-21 | 삼성전기주식회사 | 기상결정성장법에의한ZnSe단결정제조장치 |
| US6936357B2 (en) * | 2001-07-06 | 2005-08-30 | Technologies And Devices International, Inc. | Bulk GaN and ALGaN single crystals |
| JPWO2003098708A1 (ja) * | 2001-06-06 | 2005-09-22 | アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオンＡＭＭＯＮＯ Ｓｐ．ｚｏ．ｏ． | 蛍光体単結晶基板、及びその製法並びにそれを用いる窒化物半導体素子 |
| US7279047B2 (en) | 2001-07-06 | 2007-10-09 | Technologies And Devices, International, Inc. | Reactor for extended duration growth of gallium containing single crystals |
| US7501023B2 (en) | 2001-07-06 | 2009-03-10 | Technologies And Devices, International, Inc. | Method and apparatus for fabricating crack-free Group III nitride semiconductor materials |
| US7670435B2 (en) | 2001-03-30 | 2010-03-02 | Technologies And Devices International, Inc. | Apparatus for epitaxially growing semiconductor device structures with sharp layer interfaces utilizing HVPE |
| US7871843B2 (en) | 2002-05-17 | 2011-01-18 | Ammono. Sp. z o.o. | Method of preparing light emitting device |
| US7905957B2 (en) | 2004-11-26 | 2011-03-15 | Ammono Sp. Z.O.O. | Method of obtaining bulk single crystals by seeded growth |
| US8110848B2 (en) | 2002-12-11 | 2012-02-07 | Ammono Sp. Z O.O. | Substrate for epitaxy and method of preparing the same |
| US8398767B2 (en) | 2004-06-11 | 2013-03-19 | Ammono S.A. | Bulk mono-crystalline gallium-containing nitride and its application |
| US8647435B1 (en) | 2006-10-11 | 2014-02-11 | Ostendo Technologies, Inc. | HVPE apparatus and methods for growth of p-type single crystal group III nitride materials |
| WO2024053569A1 (ja) | 2022-09-05 | 2024-03-14 | 三菱ケミカル株式会社 | ＧａＮ結晶及びＧａＮ結晶の製造方法 |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6996150B1 (en) | 1994-09-14 | 2006-02-07 | Rohm Co., Ltd. | Semiconductor light emitting device and manufacturing method therefor |
| WO2021171652A1 (ja) | 2020-02-27 | 2021-09-02 | パナソニックＩｐマネジメント株式会社 | 画像処理装置及び画像処理方法 |
-
1983
- 1983-09-19 JP JP17248683A patent/JPS6065798A/ja active Granted
Cited By (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5871586A (en) * | 1994-06-14 | 1999-02-16 | T. Swan & Co. Limited | Chemical vapor deposition |
| EP0687749A1 (en) * | 1994-06-14 | 1995-12-20 | Thomas Swan And Co., Ltd. | Apparatus for chemical vapour deposition |
| JPH0940490A (ja) * | 1995-07-27 | 1997-02-10 | Hitachi Cable Ltd | 窒化ガリウム結晶の製造方法 |
| KR100416738B1 (ko) * | 1996-12-30 | 2004-04-21 | 삼성전기주식회사 | 기상결정성장법에의한ZnSe단결정제조장치 |
| US7670435B2 (en) | 2001-03-30 | 2010-03-02 | Technologies And Devices International, Inc. | Apparatus for epitaxially growing semiconductor device structures with sharp layer interfaces utilizing HVPE |
| JPWO2003098708A1 (ja) * | 2001-06-06 | 2005-09-22 | アンモノ・スプウカ・ジ・オグラニチョノン・オドポヴィエドニアウノシツィオンＡＭＭＯＮＯ Ｓｐ．ｚｏ．ｏ． | 蛍光体単結晶基板、及びその製法並びにそれを用いる窒化物半導体素子 |
| US7744697B2 (en) | 2001-06-06 | 2010-06-29 | Nichia Corporation | Bulk monocrystalline gallium nitride |
| US6936357B2 (en) * | 2001-07-06 | 2005-08-30 | Technologies And Devices International, Inc. | Bulk GaN and ALGaN single crystals |
| US7501023B2 (en) | 2001-07-06 | 2009-03-10 | Technologies And Devices, International, Inc. | Method and apparatus for fabricating crack-free Group III nitride semiconductor materials |
| US7279047B2 (en) | 2001-07-06 | 2007-10-09 | Technologies And Devices, International, Inc. | Reactor for extended duration growth of gallium containing single crystals |
| US7871843B2 (en) | 2002-05-17 | 2011-01-18 | Ammono. Sp. z o.o. | Method of preparing light emitting device |
| US8110848B2 (en) | 2002-12-11 | 2012-02-07 | Ammono Sp. Z O.O. | Substrate for epitaxy and method of preparing the same |
| US8398767B2 (en) | 2004-06-11 | 2013-03-19 | Ammono S.A. | Bulk mono-crystalline gallium-containing nitride and its application |
| US7905957B2 (en) | 2004-11-26 | 2011-03-15 | Ammono Sp. Z.O.O. | Method of obtaining bulk single crystals by seeded growth |
| US8647435B1 (en) | 2006-10-11 | 2014-02-11 | Ostendo Technologies, Inc. | HVPE apparatus and methods for growth of p-type single crystal group III nitride materials |
| US9416464B1 (en) | 2006-10-11 | 2016-08-16 | Ostendo Technologies, Inc. | Apparatus and methods for controlling gas flows in a HVPE reactor |
| WO2024053569A1 (ja) | 2022-09-05 | 2024-03-14 | 三菱ケミカル株式会社 | ＧａＮ結晶及びＧａＮ結晶の製造方法 |
| KR20250065648A (ko) | 2022-09-05 | 2025-05-13 | 미쯔비시 케미컬 주식회사 | GaN 결정 및 GaN 결정의 제조 방법 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0331678B2 (enrdf_load_stackoverflow) | 1991-05-08 |
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